AM6802 [AITSEMI]
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | AM6802 |
| 厂家： | 
AiT Semiconductor |
| 描述： | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总9页 (文件大小：621K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM6802
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
FEATURES
AM6802 is available in a SOT-26 package.
30V/4A,
RDS(ON)= 39mΩ(max.) @ VGS= 10V
RDS(ON)= 68mΩ(max.) @ VGS= 4.5V
Reliable and Rugged
Available in a SOT-26 package.
ORDERING INFORMATION
APPLICATION
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Package Type
SOT-26
Part Number
AM6802E6R
AM6802E6VR
Systems.
E6
Load Switch
V: Halogen free Package
R: Tape & Reel
PIN DESCRIPTION
Note
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
N-Channel MOSFET
REV1.0
- SEP 2014 RELEASED -
- 1 -
AM6802
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
G1
Function
Gate1
1
2
3
4
5
6
S2
Source2
Gate2
G2
D2
Drain2
Source1
Drain1
S1
D1
REV1.0
- SEP 2014 RELEASED -
- 2 -
AM6802
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted
VDSS, Drain-Source Voltage
30V
VGSS, Gate-Source Voltage
±20V
TA=25℃
4A
3.2A
ID, Continuous Drain Current
TA=70℃
IDM, 300μs Pulsed Drain Current
IS, Diode Continuous Forward Current
TJ, Maximum Junction Temperature
TSTG, Storage Temperature Range
VGS=10V
16A
1A
150℃
-55℃~150℃
1W
TA=25oC
PD, Maximum Power Dissipation
TA=70℃
0.64W
125°C/W
RθJANOTE1, Thermal Resistance-Junction to Ambient Steady state
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: Surface Mounted on 1in2 pad area.
REV1.0
- SEP 2014 RELEASED -
- 3 -
AM6802
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless Otherwise Noted
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V,IDS=250μA
30
-
-
-
-
V
VDS=24V,VGS=0V
1
Zero Gate Voltage Drain Current
μA
TJ=85°C
30
2.5
±10
39
68
Gate Threshold Voltage
Gate Leakage Current
VGS(th)
IGSS
VDS=VGS,IDS=250μA
VGS=±20V, VDS=0V
VGS=10V,IDS=4A
1.3
1.8
-
V
-
-
-
μA
32
52
RDS(ON)
NOTE2
Drain-Source On-state Resistance
mΩ
VGS=4.5V,IDS=3A
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Dynamic Characteristics NOTE3
Gate Resistance
NOTE2
VSD
ISD=1A, VGS=0V
-
-
-
0.75
9.2
1.1
V
trr
-
-
ns
nC
ISD=4A, dlSD/dt=100A/μs
Qrr
4.3
RG
CISS
COSS
CRSS
tD(ON)
tR
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
-
-
-
-
-
-
-
-
2.3
215
37
-
-
Ω
Input Capacitance
Output Capacitance
VDS=15V,
-
pF
Frequency=1.0MHz
Reverse Transfer Capacitance
Turn-on Delay Time
28
-
5.3
11
8
VDD=15V, RL=15Ω
IDS=1A, VGEN=10V,
RG=6Ω
Turn-on Rise Time
16
17
4
ns
Turn-off Delay Time
tD(OFF)
tF
12
Turn-off Fall Time
2.6
Gate Charge Characteristics NOTE3
VGS=4.5V
VDS=15V,
-
3
-
Total Gate Charge
QG
VGS=10V
IDS=4A
-
-
-
-
5.8
1.1
1.5
0.5
-
-
-
-
nC
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
QGth
VDS=15V, VGS=10V,
IDS≡4A
Threshold Gate Charge
NOTE2: Pulse test; pulse width≤300μs, duty cycle≤2%.
NOTE3: Guaranteed by design, not subject to production testing.
REV1.0
- SEP 2014 RELEASED -
- 4 -
AM6802
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL CHARACTERISTICS
1. Power Dissipation
2. Drain Current
3. Safe Operation Area
4. Thermal Transient Impedance
5. Output Characteristics
6. Drain-Source On Resistance
REV1.0
- SEP 2014 RELEASED -
- 5 -
AM6802
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
7. Gate-Source On Resistance
8. Gate Threshold Voltage
10. Source-Drain Diode Forward
12. Gate Charge
9. Drain-Source On Resistance
11. Capacitance
REV1.0
- SEP 2014 RELEASED -
- 6 -
AM6802
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DETAILED INFORMATION
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
REV1.0
- SEP 2014 RELEASED -
- 7 -
AM6802
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PACKAGE INFORMATION
Dimension in SOT-26 Package (Unit: mm)
SYMBOL
MIN
-
MAX
1.250
0.050
1.200
0.500
0.220
3.100
3.000
1.800
A
A1
A2
b
0.000
0.900
0.300
0.080
2.700
2.600
1.400
c
D
E
E1
e
0.950(BSC)
1.900(BSC)
e1
L
0.300
0.600
θ
0°
8°
REV1.0
- SEP 2014 RELEASED -
- 8 -
AM6802
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- SEP 2014 RELEASED -
- 9 -
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