AM8205 [AITSEMI]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET;
| 型号： | AM8205 |
| 厂家： | 
AiT Semiconductor |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总11页 (文件大小：521K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM8205
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
FEATURES
AM8205 is the Dual N-Channel enhancement mode
power field effect transistors are using trench DMOS
technology. This advanced trench technology to
provide excellent RDS(ON). These devices are well
suited for high efficiency fast switching applications,
low in-line power loss are needed in small outline
surface mount package.
TSSOP8
VDS= 20V, ID= 6.2A
R
R
R
R
DS(ON) =21mΩ(Typ.)@ VGS= 4.5V
DS(ON) =22mΩ(Typ.)@ VGS= 4.0V
DS(ON) =23mΩ(Typ.)@VGS = 3.2V
DS(ON) =25mΩ(Typ.)@VGS = 2.5V
SOT-26
DS = 20V, ID = 6A
V
AM8205 is available in a TSSOP8 and SOT-26
packages.
R
R
DS(ON) =22mΩ(Typ.)@VGS = 4.5V
DS(ON) =25mΩ(Typ.)@VGS = 2.5V
Fast switch
High power and current handling capability
Exceptional on-resistance
Available in a TSSOP8 and SOT-26 packages.
ORDERING INFORMATION
APPLICATION
Power Management in Notebook Computer
Portable Equipment and Battery Powered.
Package Type
Part Number
AM8205TMX8R
TSSOP8
TMX8
E6
PIN DESCRIPTION
SPQ: 3,000pcs/Reel
AM8205TMX8VR
AM8205E6R
SOT-26
SPQ: 3,000pcs/Reel
AM8205E6VR
V: Halogen free Package
R: Tape & Reel
Note
AiT provides all RoHS products
REV3.0
- JUN 2010 RELEASED, MAY 2018 UPDATED -
- 1 -
AM8205
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PIN DESCRIPTION
Top View
Top View
Function
Pin #
Symbol
TSSOP8
1
SOT-26
D1/D2
S1
Drain
Source 1
Source 1
Gate 1
2
2
3
4
5
6
7
8
1
S1
G1
6
4
G2
Gate 2
S2
Source 2
Source 2
Drain
3
5
S2
D1/D2
REV3.0
- JUN 2010 RELEASED, MAY 2018 UPDATED -
- 2 -
AM8205
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted
VDSS, Drain-Source Voltage
20V
VGSS, Gate-Source Voltage
±12V
TA=25°C
TA=70°C
TA=25°C
TA=70°C
6.2A
5A
TSSOP8
SOT-26
ID, Continuous Drain CurrentNOTE1
6A
4.7A
TSSOP8
SOT-26
24.8A
IDM, Pulsed Drain CurrentNOTE2
PD, Power DissipationNOTE1
24A
TA=25°C
TA=70°C
TA=25°C
TA=70°C
1.5W
TSSOP8
SOT-26
0.9W
1.4W
0.9W
TJ, Operation Junction Temperature
TSTG, Storage Temperature Range
-55℃~+150℃
-55℃~+150℃
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
THERMAL CHARACTERISTICS
TSSOP8
Parameter
Symbol
RθJA
Limit
85
Units
°C/W
Thermal Resistance Junction to AmbientNOTE3
t≦10s
Thermal Resistance Junction to AmbientNOTE3
Steady-State
100
SOT-26
Parameter
Symbol
RθJA
Limit
90
Units
°C/W
Thermal Resistance Junction to AmbientNOTE3
t≦10s
Thermal Resistance Junction to AmbientNOTE3
Steady-State
130
REV3.0
- JUN 2010 RELEASED, MAY 2018 UPDATED -
- 3 -
AM8205
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted
Parameter
Static Parameters
Symbol
Conditions
Min
Typ.
Max
Units
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
IGSS
VGS=0V,ID=250μA
VDS=VGS,ID=250μA
VDS=0V, VGS=±12V
VDS=20V,VGS=0V
TJ =25°C
20
0.4
-
-
0.7
-
-
V
V
1.0
Gate Leakage Current
±100
nA
-
-
-
-
1
Zero Gate Voltage Drain Current
IDSS
μA
VDS =16V,VGS =0V
TJ =75°C
10
VGS =4.5V,ID=6.2A
VGS =4.0V,ID=5A
VGS =3.2V,ID=4A
VGS =2.5V,ID=3A
-
-
-
-
-
-
-
21
22
23
25
22
25
7
25
26
28
30
26
30
-
TSSOP8
RDS(ON)
mΩ
Drain-source
On-ResistanceNOTE4
SOT-26
VGS =4.5V,ID=6A
RDS(ON)
Gfs
mΩ
VGS =2.5V,ID=4A
VDS =5V,ID=4A
Forward Transconductance
Diode Characteristics
S
TSSOP8
SOT-26
TSSOP8
SOT-26
IS=1A, VGS=0V,
IS=6A, VGS=0V,
-
-
-
-
0.7
0.7
-
1
1
V
V
A
A
Diode Forward
VoltageNOTE4
Continuous
Current
VSD
IS
3.2
3
Source
-
Body Diode Reverse Recovery
trr
-
-
17
8
-
-
ns
Time
IS =6A, dl/dt=100A/μs
Body Diode Reverse Recovery
Charge
Qrr
nC
REV3.0
- JUN 2010 RELEASED, MAY 2018 UPDATED -
- 4 -
AM8205
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Dynamic Parameters
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
6.1
1.8
1.6
485
60
36
5
8.2
2.4
2.2
679
84
50
-
VDS=10V, VGS=4.5V,
ID=6A
Gate-Source Charge
Gate-Drain Charge
nC
pF
Input Capacitance
VDS=10V, VGS=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On TimeNOTE5
4.2
12
6
-
VDD=10V, VGEN=4.5V,
ns
R
GEN=3Ω, ID=1A
td(off)
tf
-
Turn-Off TimeNOTE5
-
NOTE1: The value of RθJA is measured with the device in a still air environment with maximum junction temperature TJ(MAX)= 150°C
(initial temperature TA=25°C).
NOTE2: The TJ(MAX)=150°C, using junction-to-ambient thermal resistance.
NOTE3: Surface−mounted on FR-4 board using 1 sq−in pad, 2 oz Cu, in a still air environment with TA=25°C.
NOTE4. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
NOTE5: Pulsed width limited by maximum junction temperature.
REV3.0
- JUN 2010 RELEASED, MAY 2018 UPDATED -
- 5 -
AM8205
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
TYPICAL CHARACTERISTICS
1. Output Characteristics
2. Drain-Source On Resistance(TSSOP8)
4. Gate-Source vs. On Resistance(TSSOP8)
6. Capacitance
3. Drain-Source On Resistance(SOT-26)
5. Gate-Source vs. On Resistance(SOT-26)
REV3.0
- JUN 2010 RELEASED, MAY 2018 UPDATED -
- 6 -
AM8205
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
7. Gate Threshold Voltage
8. Power Dissipation(TSSOP8)
10. RDSON vs. Junction Temperature
12. Drain Current vs. TJ(SOT-26)
9. Power Dissipation(SOT-26)
11. Drain Current vs. TJ(TSSOP8)
REV3.0
- JUN 2010 RELEASED, MAY 2018 UPDATED -
- 7 -
AM8205
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
13. Maximum Safe Operation Area
14. Thermal Transient Impedance
15. Gate Charge Waveform
16. Switching Time Waveform
REV3.0
- JUN 2010 RELEASED, MAY 2018 UPDATED -
- 8 -
AM8205
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PACKAGE INFORMATION
Dimension in TSSOP8 (Unit: mm)
Millimeters
Inches
Symbol
Min
-
Max
Min
-
Max
A
A1
A2
b
1.200
0.150
1.050
0.047
0.006
0.041
0.012
0.008
0.122
0.260
0.177
0.050
0.800
0.190
0.090
2.900
6.200
4.300
0.002
0.031
0.007
0.004
0.114
0.244
0.169
0.300
0.200
3.100
6.600
4.500
c
D
E
E1
e
0.650 REF
0.026 REF
L
0.450
0°
0.750
8°
0.018
0°
0.030
8°
θ
REV3.0
- JUN 2010 RELEASED, MAY 2018 UPDATED -
- 9 -
AM8205
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Dimension in SOT-26(Unit: mm)
Millimeters
Inches
Symbol
Min
Max
Min
Max
A
A1
A2
A3
b
-
1.300
0.100
1.200
0.750
0.430
0.380
0.210
0.160
3.120
3.000
1.800
-
0.051
0.004
0.047
0.030
0.017
0.015
0.008
0.006
0.123
0.118
0.071
0.040
1.000
0.550
0.340
0.330
0.150
0.140
2.720
2.600
1.400
0.002
0.039
0.022
0.013
0.013
0.006
0.006
0.107
0.102
0.055
b1
c
c1
D
E
E1
e
0.950 BSC
0.037 BSC
L
0.300
0°
0.600
8°
0.012
0°
0.024
8°
θ
REV3.0
- JUN 2010 RELEASED, MAY 2018 UPDATED -
- 10 -
AM8205
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or server property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV3.0
- JUN 2010 RELEASED, MAY 2018 UPDATED -
- 11 -
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