PM1001Q20VR [AITSEMI]
POWER MANAGEMENT UNIT;
| 型号： | PM1001Q20VR |
| 厂家： | 
AiT Semiconductor |
| 描述： | POWER MANAGEMENT UNIT |
| 文件： | 总15页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
DESCRIPTION
FEATURES
PM1001 includes a programmable high efficiency
BUCK charger, four LED battery indicators, a Torch
LED driver, a high efficiency Boost converter, and an
over discharge protector. It is suitable for single-cell
lithium-ion/lithium polymer battery charge and
discharge management, and can be widely used in
power bank, handheld devices, PDA, smart phones
and so on.
One Key Control
2A charge current
1.5A discharge current
50mA Torch application integration
Automatically start when the device is plugged
into power bank(need other circuits)
Automatically shut down when device is full or
be plugged out 16 seconds
It integrates high efficiency synchronous BUCK
battery charge management, the maximum charging
current up to 2A; the integrated boost DC/DC can
output the maximum discharge current reaches 1.5A,
and intelligent judgments load insertion and removal,
automatic boost and automatic shutdown; the
integrated battery detection and 4 -segment display,
both in the state of charge or discharge, can
effectively indicate the remaining power of the
battery.
4 segment battery indicator
Low standby power consumption
Automatic shut down when Battery voltage is
lower than 3.1V
Available in QFN20(4X4) Package
APPLICATION
Single-chip Power Bank solution
Single-cell lithium-ion / lithium polymer battery
charger
By the external key button, it can easily control the
boost switch on and Torch On/off.
Fixed 5V Boost Converter
Torch LED can output maximum 50mA of current.
PM1001 also integrates a battery temperature
detection, low battery voltage protection, output over
current /over voltage/short circuit protection circuit to
ensure that chip and system security.
TYPICAL APPLICATION
The PM1001 is available in QFN20(4X4)
package.
ORDERING INFORMATION
Package Type
QFN20(4X4)
Part Number
PM1001Q20R
PM1001Q20VR
Q20
V: Halogen free Package
R: Tape & Reel
AiT provides all RoHS products
Note
NOTE: L1 is the lowest indicator, and L1 is the
reference of L2~L4, it must connect to a LED.
Suffix “ V “ means Halogen free Package
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 1 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
Top View
Pin #
1,18
2,3
4,5
6
Symbol
GNDA
SW
Function
Analog ground
Inductive charger port
Charger power input port
VIN
SENSE
BATT
NTC
KEY
L1
Charger current detection port
7
Battery access terminal
8
Battery temperature detection port , an external NTC resistor
Key input port , built-in pull-up resistor
9
10
11
12
13
14
15
16
17
19,20
Battery indicator 1, output port , constant current 3mA
Battery indicator 2 , output ports , constant current 3mA
Battery indicator 3 , output ports , constant current 3mA
Battery indicator 4 , output ports , constant current 3mA
Digital Ground
L2
L3
L4
GNDD
Torch
LED Torch output ports, 50mA max.
SHUTDOWN Load path control port
VOUT
LX
Boost output port,5V
Boost inductor port
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 2 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
ABSOLUTE MAXIMUM RATINGS
VIN, Input Voltage
-0.3V~6.5V
-0.3V~6.5V
-0.3V~6.5V
-0.3V~6.5V
5A
VBAT, VBATT
VOUT, Output Voltage
VOTHERS, Other Terminal Voltage
ILX, LX Switch Current
ISW, SW Switching Current
±2.5A
TOP, Operating Temperature Range
TLEAD, Lead Soldering Temperature (10 seconds)
VESD, Lead Soldering Temperature (10 seconds)
-45℃~85℃
300℃
4000V
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 3 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
ELECTRICAL CHARACTERISTICS
Test Condition: VBATT=3.6V, VOUT=5V, VIN=5V, RS=0.05Ω (TA=25℃, Unless Otherwise Specified)
Parameter
Key end turn-on voltage
Key end of the pull-up
resistor
Symbol
VKEY
Conditions
VBATT=3.6V
Min.
Typ.
Max.
1.2
Unit
V
RKEY
500K
1.67
3.33
Ω
NTC temperature shutdown
voltage
VHOT
1.57
3.23
1.77
V
NTC Low Voltage
Shutdown
VCOLD
3.43
1
V
Standby Current
ISTANDBY
uA
BOOST DC-DC parameters
Input Voltage
VBATT
VOUT
IOFF
IC
IOUT=1A
IOUT=1A
3.2
4.9
5
5.1
1
V
V
Output Voltage
5.0
0.01
200
1.5
Shutdown Current
No Load Current
Switching frequency
Switching frequency
Power tube resistance
Power tube resistance
uA
uA
MHz
%
VBATT=3.6V，VOUT=5V
IOUT=2A
FS
1.25
75
1.75
DMAX
R
VBATT=3.6V
VBATT=3.6V，ISW=2A
VBATT=4.2V
65
100
5
mΩ
A
ILX
3.5
4.5
I
OUT=1A，VBATT=3.2V to
Linear adjustment degree
Load Regulation degrees
ΔVLINE
0.2
%
4.5V
V
BATT=3.6V，IOUT=10mA to
ΔVLOAD
TSHD
0.22
153
25
%
℃
℃
2A
Load Regulation degrees
Thermal Shutdown
Hysteresis
VBATT=3.6V，IOUT=100mA
143
20
163
30
ΔTSHD
VBATT=3.6V，IOUT=100mA
VBAT=4.0V
Automatic Shutdown
Determine Current
Automatic Shutdown
waiting time
ISHUTDOWN
20
16
mA
S
TSHUTDOWN
IOUT=0mA
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 4 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Charger Electrical Parameters
Input Voltage
VIN
IQ
4.35
50
5
6
V
Standby Mode VIN<4.35V
End of Charge
60
70
1.2
uA
mA
Input Current
ISTB
0.83
0.92
reverse leakage current,
IR
IOFF
0
0.01
0.1
0.1
uA
uA
uA
mV
A
VBATT>VIN
Battery terminal current
Remove VIN
Standby Mode( End of
charge )
IB
150
90
200
250
110
Sensed pressure
VSENSE
ICHARGE
3V<VBATT<4.18V
100
VSENSE
RS
Constant current charging
current
/
VBATT<4.18V
Charging up cut-off current
Trickle Charge limit voltage
Hysteresis voltage trickle
charging
IEND
VTR
VBATT>4.2V
VBATT Rising
50
65
80
3
mA
V
2.8
2.92
ΔVTR
60
80
4.2
110
mV
V
0℃<TA<85℃, IBAT
=
Output control voltage
VFLOAT
4.158
4.242
40mA
Recharge the battery
voltage
VRECHARGE
VBATT falling
4.07
V
Hysteresis voltage battery
recharge
ΔVREG
FOSC
VBATT - VRECHARGE
RL=100mA
90
1.35
4.3
130
1.5
170
1.65
4.45
mV
MHz
V
Oscillator Frequency
VIN adjusted from low to
high
Low-voltage lockout power
Supply high voltage lockout
Battery high voltage lockout
VUVLO
4.35
VIN adjusted from low to
high
VINOVP
6.4
6.5
6.6
V
V
Low battery voltage from
VIN to adjust
VBOVP
4.32
4.37
4.42
LED Electrical parameters
Current battery indicator
Current matching
ILED
VBAT=3.4V~4.2V
VBAT=3.6V
2.5
3
5
3.5
50
mA
%
ΔIMATCH
ITORCH
Torch LED current
VBAT=3.2V-4.2V
mA
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 5 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
BLOCK DIAGRAM
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 6 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
DETAILED INFORMATION
Operational Principle
PM1001 is an single-chip power bank solution, that integrated DC / DC charge management, DC / DC step-up,
voltage sensing and power display. It complete the function integrated three or more of the original chip to the
single chip. Performance, you can set the maximum charge current 2A, maximum output current of the boost
can be achieved 1.5A, and shut down power consumption is almost zero ( less than 1uA).
Button Operation
It is the one-touch control. In the off state, a short click Key (short press times greater than 60mS less than
2S), cause power on, display the power, and turn on the boost. After 4 seconds, shut down the power display,
and L1 starts flashing (0.5Hz). L1 will always flashing when it is boosting. During the time, another short press
Key, it can show the power 4 seconds once again, and the booster is not being affected.
The boost will automatically turns off, L1 blinking will stops and the device will enters the shutdown state,
when the device is fully charged or the load is removed after 16 seconds.
When the battery voltage is lower than 3.5V, with a short press Key, L1 will flash explosion 4S to alert the low
battery.
In the boost process, when the battery voltage is lower than 3.1V, the output will be automatically shut down
to protect the battery not be over-discharged.
Long press Key (pressing time is greater than 2S), will open the Torch function, and long press Key again to
turn off the Torch.
When the battery voltage is lower than 3.1V, you cannot open the Torch and output. But when the Torch has
been turned on, it will not turn off when the battery voltage is too low.
During charging, short press operation is masked, but long press can turn on or turn off the Torch.
Operating Mode
Function
Boost
short press Key (60ms<Key<2S)
Long press Key (Key>2S)
/
/
Charging mode
Power display
Torch
/
/
/
On or Off
Boost
On
/
Boost Mode
Power display
Torch
Show 4S
/
/
On or Off
Power Display
When the PM1001 is during the boost or charging in, the voltage on the BATT monitored and calculated by
L1-L4 shows the current consumption, and each LED represents 25% of the power. Battery charge and
discharge curves, as shown
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 7 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
Charging, the battery indicator table below
Battery voltage
<3.72
Indicator Number
Graphic（L1L2L3L4）
▲□□□
L1 flashing
L2 flashing
L3 flashing
L4 flashing
All light
■▲□□
3.72-3.87
3.87-4.02
>4.02
■■▲□
■■■▲
■■■■
End of Charge
(■Represents a long bright, □Represents LED OFF, ▲Represents Charging Flashing, Frequence:1HZ,
Pulse Width: 0.5S)
Boosting, the battery indicator table below (Short press display , four seconds and then turns off)
Battery voltage
>3.85
Indicator Number
Graphic（L1L2L3L4）
■■■■
4
■■■□
3.85-3.71
3.71-3.55
3.55-3.43
3.43-3.2
<3.2
3
■■□□
2
1
■□□□
◆□□□
Flashing warning
Shut down
□□□□
( ■ Represents a long bright, □ Represents LED OFF, ◆ Represent Low Pressure Alarm Flashes,
Frequence : 4HZ)
These voltage parameters for reference only, the actual difference because the battery and different
production batches have voltage differences.
The power display will last 4 seconds, then L1 change to flashing, flashing period 2S, pulse width 0.25S, other
LED goes off.
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 8 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
Charging Modes
Built-in constant current constant voltage battery charging management, through a current -mode PWM
control DC-DC topology to achieve, the charging current is set by an external connection on both ends of the
VBATT and SENSE resistor to set the chip internally by a high accuracy reference to set the charging voltage.
When the input voltage is below the UVLO level (4.35V), the chip enters SLEEP MODE, then the chip power
consumption to 60μA or less. When the input voltage rises above the UVLO voltage, the charger enters
charging mode, then L1-L4 shows charging blinking. If the battery voltage is lower than the trickle charge
threshold voltage (2.9V), the charger enters trickle charge mode, and the trickle charge set to 25 % of the
maximum charge current. When the battery voltage exceeds the trickle charge threshold, the charger enters
constant current charging mode, then the charging current by the internal 100mV reference and external
sense resistor to decide, calculated as follows: ICHARGE=100mV/RS.
When the battery voltage is close to the target value 4.2V, the charge current of the chip begins to drop and
the chip enters constant voltage charging mode LDO. When the current drops to 65mA, the chip stops
charging, L1-L4 full brightness. When the battery not leave BATT terminal and the battery voltage drops to
4.07V, the chip will automatically enter RECHARGE state, and restart the charge cycle.
Once in charging mode, the boost circuit will automatically stop when the short press operation is masked, but
the long press can turn on or turn off the light. Exit charge mode after entering standby mode.
Boost Mode
In shutdown mode, short press Key or detect access to the load, then the boost circuit starts operating.
In boost circuit, it can achieve efficient and stable work in a wide load range, using PWM current mode and
voltage mode PFM automatic switching. Building a 4.5A power switch, lithium battery can deliver up to 2A of
output current, and efficiency of 90% (up 95%).
The SHUTDOWN pin with an external NMOS transistors, is to achieve the power path completely shutdown.
When the chip is normal working, SHUTDOWN is high, and VOUT- used as a load. Work in the chip off or an
abnormal state (such as the short-circuit protection, etc.), SHUTDOWN client will drop as low to achieve the
power path completely shutdown.
SHUTDOWN end remain unconnected when it is not in use, and prohibit connecting to VBATT or GND terminal.
The external NMOS transistor with the use of SHUTDOWN function, need very little resistance RDSON, in order
to ensure high efficiency and ideal load short-circuit protection.
Boost working, if detected the VIN voltage greater than 1.6V, it is considered to enter charge mode,
SHUTDOWN immediately pulled low, and the output path closed. When the VIN is removed, it need to re-
boost button before resuming work.
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 9 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
Boost after the start, if it detects the output load current is very small ( less than 20mA),keeping this state for
more than 16S, chips that are unloaded automatically enter standby mode, where the static power
consumption is almost zero.
Temperature Protection
PM1001 built-in temperature compensation circuit, when the internal temperature reaches 100 ℃, the
maximum charging current or the maximum output current will fall with increasing temperature, reducing the
possibility of thermal breakdown of the chip, improving the reliability of the system on a chip. When the
temperature rises to 150 ℃, the chip enters the temperature protection, cutting output or stopping charging.
The chip also comes with battery temperature detection function, and this function through the NTC side to
achieve. The VBATT connect to divider resistors RT1 and RT2, and the NTC is terminated with a negative
temperature coefficient thermistor of 10KΩ RNTC, RT1 and RT2 according to battery temperature monitoring
range and thermistor resistance values to determine.
This pin can be directly connected to GND, to shield the temperature detection function.
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 10 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
Application Specification
Number
Part Number
U1
Model ( reference value )
Quantity
1
2
PM1001 (AiT Semi)
SM340A (AiT Components)
3.3uH, PIA4018-3R3N (AiT Components)
According to the charging current custom,0.05Ω
According to the temperature range from the set, 2.54K
According to the temperature range of custom, 5.32K
22uF
1
1
2
1
1
1
1
1
1
1
1
1
1
1
1
1
S1
3
LB, LC
RS
4
5
RT1
6
RT2
7
C1
8
C2
22uF
9
C3
100uF
10
11
12
13
14
15
16
N1
MOS AM3400E3R (AiT Semiconductor)
50mA Bright LED
D5
D1~D4
RL1
LED lights ( red / blue / green)
Limiting resistor, 75Ω
RL2
Limiting resistor , 47Ω
BUTTON1
C4
BUTTON, K1
1uF
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 11 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
Choice of Components
1.
The selection of booster circuit output capacitor C3. The selection Output Capacitor depends on the
output voltage ripple. In most cases, you want to use low ESR capacitors, such as ceramics and
polymers electrolytic capacitors. If you use a high- ESR capacitor c, you need to carefully review the
converter frequency compensation, and in the output circuit terminal may need to add an additional
capacitor.
2.
Choose textures and values of inductor LB and LC. Because the inductor value affects the input and
output ripple voltage and current, so the inductor selection is the key of inductive voltage converter
design. Low equivalent series resistance of the inductor, the power conversion efficiency is the best.
Choose the inductor saturation current rating, make it greater than the steady-state circuit inductor
current peak.
3.
4.
Boost converter to choose fast forward voltage drop of the schottky rectifier diodes, so make it low
power consumption and high efficiency. The average current of schottky diode rating should be greater
than the maximum output current of the circuit.
Try to use a small internal resistance, fast switching speed of the MOSFET N, so make it low power
consumption and high efficiency, and be ready to heat treatment. AM3400 for the N-channel
enhancement type field effect transistor, RDSON = 27mohm @ VGS = 3.6V, can meet the conditions of
use.
MOSFET N try to use a small internal resistance, fast switching speed, low power consumption and high
efficiency make it, and be ready to heat treatment. AM3400 for the N-channel enhancement type field
effect transistor, RDSON = 27mohm @ VGS = 3.6V, can meet the conditions of use.
Temperature protection divider resistor selection RT1/RT2
5.
The VBATT connects the dividing resistors RT1 and RT2, and the NTC connects a negative temperature
coefficient thermistor 10KΩ RNTC, RT1 and RT2 according to battery temperature monitoring range and
thermistor resistance values to determine
Suppose the set battery temperature range TL ~ TH, (TL <TH); negative temperature coefficient
thermistor (NTC). RTL is the resistance at temperature TL, and RTH is the resistance at temperature TH,
RTL> RTH.
At the temperature TL , NTC V_TL the voltage is:
At the temperature TH , NTC voltage V_TH is:
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 12 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
By
Similarly, if the battery using the positive temperature coefficient (PTC) thermistors, then RTH> RTL, in the
formula of RT1 and RT2, the RTL and RTH can be reversed.
Derived from the above it can be seen that the subjecting set temperature range has nothing to do with supply
voltage VIN. It is to do with RT1, RT2, RTL, and RTH; including RTL, RTH battery can access the relevant
manuals or obtained through experimental tests.
In practical application, if only one side of the temperature characteristics of concern, such as thermal
protection, it cannot RT2, RT1 can use only. Calculating R1 becomes very simple, and do not repeat them
here.
For example: Select the NTC resistor 10K, RT1=2.54K, RT2=5.32K. -20 to 60 degrees to achieve a
temperature range of detection.
PCB LAYOUT NOTES:
1、 Sampling resistance RS, and the filter capacitor C1, C2 as close IC.
2、 High-current paths must be thick and wide wiring, and cabling area as small as possible.
3、 Distinguish GNDA and GNDD alignment, grounding must be good.
4、 High-frequency switching path is not through-hole, not the bottom cloth signal line inductance.
5、 Ground area is large enough, and the board should shop copper to control IC heat well.
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 13 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
PACKAGE INFORMATION
Dimension in QFN20 (Unit: mm)
Symbol
Min
0.700/0.800
0.000
Max
A
A1
A3
D
0.800/0.900
0.050
0.203REF
3.900
3.900
1.900
1.900
4.100
4.100
2.100
2.100
E
D1
E1
k
0.200MIN
0.500TYP
b
0.180
0.300
0.300
0.500
e
L
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 14 -
PM1001
POWER MANAGEMENT UNIT (PMU)
FOUR SEGMENT INDICATOR, SINGLE-CHIP
POWER BANK DEDICATED IC
AiT Semiconductor Inc.
www.ait-ic.com
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.1
- NOV 2013 RELEASED, DEC 2014 UPDATED -
- 15 -
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