EQ-733L [AKM]
EQ-733L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package; EQ- 733L由一个的InAs量子阱霍尔元件和包中的信号处理的IC芯片
| 型号： | EQ-733L |
| 厂家： | 
ASAHI KASEI MICROSYSTEMS |
| 描述： | EQ-733L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package |
| 文件： | 总4页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Hybrid Linear Hall Effect Ics EQ-series
Shipped in bulk(500pcs/Pack)
EQ-733L
EQ-733L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
Notice:It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue.
●Features
¡Analog output which proportional to the magnetic field strength and pole.
¡Magnetic sensitivity 20mV/mT(typ.)
¡Supply voltage from 3.0V to 5.5V at single power supply
¡Operating temperature range -40℃～100℃
¡Ratio-metric analog output
¡3pin surface mount plastic package
¡Quick response 1μs
ꢀ(when the rise-up time of magnetic field is rather than 1μs)
¡Low output noise voltage 2mVp-p
●Operational Characteristics
●Pin and functions
Vout
S
Vcc
（Top View）
VsatH
Marking
1：VCC
2：GND
3：OUT
1
2
3
VoutO
VsatL
PinꢀNo. Pin name
Function
N
1
2
3
VCC
GND
OUT
Power supply
Ground
N
0
S
Magnetic flux density
Output
●Functional Block Diagram
●Application Circuit
1:VCC
（Top View）
3:OUT
2:GND
Please add LPF if required.
OUT
VCC
GND
Hall Element Amplifier
5V
0.1μF
●Recommend operating conditions
●Absolute Maximum Ratings（Ta=25℃）
parameter
symbol specification
unit
parameter
symbol
min
typ
max
unit
V
mA
℃
V
－0.3 ～ 6
Supply voltage
Supply voltage VCC
3.0
5.0
5.5
1.0
V
cc
（＊）
±1.2
output current Iout
output current
output load
IOUT
CL
－1.0
mA
pF
operating ambient
t e m p e r a t u r e
Topr
－40 ～ 100
－40 ～ 125
1000
Storage ambient
t e m p e r a t u r e
℃
Tstg
（＊）Vcc＝5V
EQ-733L
●Electric characteristics（TA＝25℃, VCC＝5V）
Parameter
Symbol
Conditions
B=0mT with no load
min
Typ
Max
Unit
Current consumption
9
12
mA
I
CC
Output saturation voltage at High Level(*1)
Output saturation voltage at Low Level(*1)
B a n d w i d t h (*2)
V
V
V
V
I
I
＝ー1mA
＝1mA
V
－0.3
CC
CC
SATH
OUT
OUT
0.3
0
V
SATL
260
1
kHz
f
ー3dBꢀC ＝1000pF
L
T
Rise time : 10% of Input MFD to 90% of output voltage.
Fall time: 90% of Input MFD to 10% of output voltage.
(under input/output MFD step is 1 to 2μs)
R e s p o n s e t i m e (*2)
t
t
RES
μs
μs
C ＝1000pF
L
10% to 90% of output voltage under
input/output MFD step is 1 to 2μs.
C ＝1000pF
Output rise time(*2)
Output fall time(*2)
RISE
L
2
90% to 10% of output voltage under
input/output MFD step is 1 to 2μs
t
FALL
C ＝1000pF
L
Rise time : 10% of Input MFD to 10% of output voltage.
Fall time: 90% of Input MFD to 90% of output voltage.
(under input/output MFD step is 1 to 2μs)
Output delay time(*2)
t
0.3
2
μs
REAC
C ＝1000pF
L
Output noise voltage(*2)
V
Np-p
mVp-p
※1mT = 10Gauss
(*1&2) Design target at 25℃
●Magnetic characteristics（TA＝25℃, VCC＝5V）
●Ratio-metric characteristics（TA＝25℃）
Parameter
Symbol
Conditions
min Typ Max Unit
Parameter
Symbol
Conditions
min Typ Max Unit
Sensitivity(*3)
V
h
B=0、±41mT with no load
B＝0mT
17 20 23 mV/mT
Error in Ratiometric of
Magnetic sensitivity(*5)
B=0、±41mT with no load
－3
－3
3
3
%
%
V
h-R
2.45 2.5 2.55
－0.5 0.5 ％F.S.
※1mT = 10Gauss
V
Quiescent voltage
V
OUT0
B＝0mT (I
＝0mA)
OUT
Error in Ratiometric of
Quiescent voltage(*5)
Linearity(*4)
ρ
V
B＝0mT
OUT0-R
B＝±50mT (I
＝±1mA)
OUT
※1mT = 10Gauss
(*3) See Characteristic Definitions section
(*4) See Characteristic Definitions section
(*5) See Characteristic Definitions section
●Characteristic Definitions
①Magnetic sensitivity Vh (mV/mT)
④Response timeꢀtRES (μs)
Magnetic sensitivity is defined as the slope of the straight line
obtained from three points, Quiescentꢀvoltage VOUT0、VOUT
(＋B)、VOUT (－B) (B is described in measurement condition),
by the least square approximation.
Response time is defined as the time from the 90% reach
point of input magnetic field rise up to the 90% reach point of
output voltage rise up
⑤Output rise time, Output fall time ꢀtRISE、tFAL（L μs ）
ꢀOutput rise up time is defined as the time from the 10% point
to the 90% point of output voltage under a pulse like
magnetic field input shown below.
Output fall down time is defined as the time from the 90%
point to the 10% point of output voltage under a pulse like
magnetic field input shown below.
②Linearityρ(%F.S.)
Linearity is defined as the ratio of a error voltage against
FULLSCALE. Where error voltage is calculate as the
difference from the straight line obtained from three points,
Quiescentꢀvoltage VOUT0、VOUT (＋B)、VOUT (－B) (B and
Output current are described in measurement condition
shown below), by the least square approximation.
〈Condition〉：0mT applied、IOUT = 0mA
⑥Output delay timeꢀtREAC（μs ）
Output delay time is defined as the time from the 10% point
in rise up(90% point in fall down) of input magnetic field to
the 10% point in rise up(90% point in fall down) of output
voltage under a pulse like magnetic field input shown below..
＋BmT applied : IOUT＝＋1.0mA（Draw out from output）
－BmT applied : IOUT＝－1.0mA（Draw in to output）
Vou（t B）ー｛Vh×B＋Vint｝
ρ＝ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ×100
Vou（t ＋B）ーVou（t ーB）
〈Relations of the input Magnetic field and tRES、tRISE、tFALL、
tREAC〉
Where FULLSCALE(F.S.) is defied as VOUT (＋B)、VOUT (－B),
Vint is y-intercepts of the line obtained in the Definition of
Magnetic sensitivity.
③Error in Ratiometric of Magnetic sensitivity and Error in
Ratiometric of quiescent voltage
Error in ratiometric is defined as the ratio of the variation of
sensitivity and quiescent voltage at 3V and 5V as following
equations..
Rise time of magnetic field
Fall time of magnetic field
1～2μs
1～2μs
90％
90％
Input magnetic field
tRES
tRISE
10％
10％
90％
V（
h
V
CC＝3V）
V
OUT
（
V
0
V
CC＝3V）
3
5
3
－
－
V（V
h
CC＝5V）
VOUT
（0
CC＝5V） 5
90％
tRES
V
hーR＝ꢀꢀꢀꢀꢀꢀꢀ ×100
VOUT0ーR＝
ꢀꢀꢀꢀꢀꢀꢀ ×100
Output voltage
of sensor
3
3
tREA
tREA
tFALL
5
5
10％
10％
EQ-733L
•Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the
advance written approval of our sales staff.
Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks,
adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such
applications is understood to be fully at the risk of the customer using our devices or systems.
•This product contains galium arsenide(GaAs).Handling and discarding precsutions required.
●Package（Unit:mm)
5°
45°
φ0.3
Sensor Center
4.1
1.15
5°
5°
10°
0.41
10°
0.55
1：VCC
2：GND
3：OUT
3
－0.4
1
2
3
1.27 1.27
0.25
Note1）The sensor center is located within the φ0.3mm circle.
Note2）The metal portions on the package side (support lead) are connected to the internal circuits. The support lead should
be isolate from the external circuit and the other support lead.
●Supply Voltage
●Operational Characteristics
5.0
4.5
4.0
3.5
3.0
6
5.5
5
Vcc＝5V
Vcc＝4V
Vcc＝3V
4.5
4
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3
Ta＝25℃
2.5
2
-40
-150
-100
-50
0
50
100
150
-20
0
20
40
60
80
100
120
Magnetic flux density〔mT〕
Ambient Temperature〔℃〕
●Temperature dependence of VH
●（For reference only）Temperature dependence of Vout0
30
3.0
Vcc＝5V
2.5
Vcc＝5V
Vcc＝4V
Vcc＝3V
20
10
0
Vcc＝4V
2.0
Vcc＝3V
1.5
B＝0mT
1.0
-40
-20
0
20
40
60
80
100
120
-40
-20
0
20
40
60
80
100
120
Ambient Temperature〔℃〕
Ambient Temperature〔℃〕
IMPORTANT NOTICE
These products and their specifications are subject to change without notice.
When you consider any use or application of these products, please make
inquiries the sales office of Asahi Kasei Microdevices Corporation (AKM) or
authorized distributors as to current status of the products.
Descriptions of external circuits, application circuits, software and other related
information contained in this document are provided only to illustrate the
operation and application examples of the semiconductor products. You are
fully responsible for the incorporation of these external circuits, application
circuits, software and other related information in the design of your
equipments. AKM assumes no responsibility for any losses incurred by you or
third parties arising from the use of these information herein. AKM assumes no
liability for infringement of any patent, intellectual property, or other rights in
the application or use of such information contained herein.
Any export of these products, or devices or systems containing them, may
require an export license or other official approval under the law and
regulations of the country of export pertaining to customs and tariffs, currency
exchange, or strategic materials.
AKM products are neither intended nor authorized for use as critical
componentsNote1) in any safety, life support, or other hazard related device or
systemNote2), and AKM assumes no responsibility for such use, except for the
use approved with the express written consent by Representative Director of
AKM. As used here:
Note1) A critical component is one whose failure to function or perform
may reasonably be expected to result, whether directly or indirectly, in the
loss of the safety or effectiveness of the device or system containing it,
and which must therefore meet very high standards of performance and
reliability.
Note2) A hazard related device or system is one designed or intended for
life support or maintenance of safety or for applications in medicine,
aerospace, nuclear energy, or other fields, in which its failure to function
or perform may reasonably be expected to result in loss of life or in
significant injury or damage to person or property.
It is the responsibility of the buyer or distributor of AKM products, who
distributes, disposes of, or otherwise places the product with a third party, to
notify such third party in advance of the above content and conditions, and the
buyer or distributor agrees to assume any and all responsibility and liability for
and hold AKM harmless from any and all claims arising from the use of said
product in the absence of such notification.
June 14, 2012
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