HW-108ABC [AKM]
Analog Circuit, 1 Func, PDSO4, MINI, PLASTIC, SOT-343, SMT-4;型号: | HW-108ABC |
厂家: | ASAHI KASEI MICROSYSTEMS |
描述: | Analog Circuit, 1 Func, PDSO4, MINI, PLASTIC, SOT-343, SMT-4 光电二极管 |
文件: | 总2页 (文件大小:40K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
InSb Hall Element
Please be aware that AKE products are not intended for use in life
support equipment, devices, or systems. Use of AKE products in such
applications requires the advance written approval of the appropriate
AKE officer.
Certain applications using semiconductor devices may involve potential
risks of personal injury, property damage, or loss of life. In order to
minimize these risks, adequate design and operating safeguards
should be provided by the customer to minimize inherent or procedural
hazards. Inclusion of AKE products in such applications is understood to
be fully at the risk of the customer using AKE devices or systems.
HW-108A
•High-sensitivity InSb Hall element.
•Super mini-mold SMT package (fits SOT343 land pattern).
•Shipped in packet-tape reel (4000pcs per reel).
Note : It is requested to read and accept "IMPORTANT NOTICE".
•Absolute Maximum Ratings
Item
Symbol
Limit
20
Unit
mA
˚C
I
Max. Input Current
Operating Temp. Range
Storage Temp. Range
Const. Current Drive
c
T
–40 to +110
–40 to +125
opr.
T
˚C
stg.
•Classification of Output Hall Voltage (VH)
VH [ mV ]
Rank
Conditions
•Electrical Characteristics(T =25˚C)
a
A
B
C
D
E
F
122 to 150
144 to 174
168 to 204
196 to 236
228 to 274
266 to 320
Symbol
Item
Conditions
Min. Typ. Max. Unit
B=50mT, V =IV
c
Constant Voltage Drive
Const. Voltage Drive
VH
Output Hall Voltage
122
320
mV
B=50mT, V =IV
c
R
in
B=0mT, I =0.1mA
c
Input Resistance
Output Resistance
Offset Voltage
250
250
–7
450
450
+7
Note : When ordering, specify 3-rank or wider range(e·g·,BCD).
R
out
B=0mT, I =0.1mA
c
•Input Current Derating Curve
V
os
B=0mT, V =IV
c
mV
Input Resistance
: 250 to 450
R
in
20
10
0
Temp. Coefficient of VH
B=50mT, I =5mA
c
VH
–1.8
–1.8
%/˚C
Temp. Coefficient of R
in
B=0mT, I =0.1mA
c
R
in
%/˚C
M
Dielectric Strength
100V D.C
1.0
Notes : 1. VH = VHM – Vos (VHM:meter indication)
1
VH (T3) – VH (T2)
(T3 – T2)
Rin (T3) – Rin (T2)
(T3 – T2)
2. VH
3. Rin
=
=
X
X 100
X 100
VH (T1)
1
(T ) X
Rin
1
–60 –40 –20
0
20
40
60
80 100 120
Ambient Temperature.(˚C)
T1 = 20˚C, T2 = 0˚C, T3 = 40˚C
•Dimensional Drawing (mm)
Note : Rin of Hall element decreases rapidly as ambient temperature
increases. Ensure compliance with input current derating curve envelope,
throughout the operating temperature range.
2.1±0.1
0.4
1.3
0.4
0.3
•Input Voltage Derating Curve
2
3
1
Input Resistance
0 to 0.1
R
in
: 250 to 450
2.0
1.0
0
4
0.1
Pinning
–60 –40 –20
0
20
40
60
80 100 120
Ambient Temperature.(˚C)
) ± (
3
Input
1(±)
2(±)
Note : For constant-voltage drive, stay within this input voltage derating
curve envelope.
) ± (
4
Output
19
HW-108A
a
•Characteristic Curves
R -T
in
VH-B
2000
1800
1600
1400
1200
1000
800
600.0
500.0
400.0
300.0
200.0
100.0
0.0
I
const
c
V
const
c
I
V
T
= 5 (mA)
= 1 (V)
= 25 (˚C)
c
c
a
I
c
c
V
in
600
400
200
0
-50
0
50
100
150
0
10
20
30
40
50
Ambient Temperature(˚C)
Magnetic Flux Density B (mT)
VH-T
VH-V , VH-Ic
c
2000
1200
1000
800
I
const
const
I
const
c
c
I
1750
1500
1250
1000
750
500
250
0
c
V
V
const
c
c
B = 50 (mT)
= 25 (˚C)
I
V
= 5 (mA)
= 1 (V)
c
c
T
a
I
c
B = 50 (mT)
600
V
in
400
g
V
in
200
5
10
15
20
I :(mA)
c
0
–50
0
50
100
150
0.0
0.5
1.0
1.5
2.0
V :(V)
c
I
(mA) Input Current
Ambient Temperature(˚C)
c
V
(V) Input Voltage
c
VOS-T
VOS-V , VOS-Ic
c
40
20
I
const
c
I
const
c
18
16
14
12
10
8
V
const
c
V
const
c
30
20
10
0
I
V
= 5 (mA)
= 1 (V)
i
I
c
B = 0 (mT)
= 25 (˚C)
c
c
T
a
I
B = 0 (mT)
c
V
in
6
4
V
in
2
I :(mA)
c
5
10
15
20
0
0.0
–50
0
50
100
150
V :(V)
c
0.5
1.0
1.5
2.0
Ambient Temperature(˚C)
I
(mA) Input Current
c
V
(V) Input Voltage
c
*Magnetic Flux Density
1(mT)=10(G)
In This Example : R =350( ), V =4.7(mV), V =
1(V)
c
in
os
20
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