ALD810023SCL [ALD]
QUAD SUPERCAPACITOR AUTO BALANCING (SABâ¢) MOSFET ARRAY; QUAD超级电容器自动平衡（ SABA ?? ¢ ） MOSFET阵列
| 型号： | ALD810023SCL |
| 厂家： | 
ADVANCED LINEAR DEVICES |
| 描述： | QUAD SUPERCAPACITOR AUTO BALANCING (SABâ¢) MOSFET ARRAY |
| 文件： | 总17页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
A
L
D
DVANCED
INEAR
EVICES, INC.
®
e
EPAD
A
ALD810023/ALD810024/ALD810025/
ALD810026/ALD810027/ALD810028
QUAD SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY
GENERAL DESCRIPTION
FEATURES & BENEFITS
TheALD8100xx andALD9100xx family of SupercapacitorAuto Balancing
MOSFETs, or SAB™ MOSFETs, are EPAD® MOSFETs designed to
address leakage balance of supercapacitors connected in series.
Supercapacitors, also known as ultracapacitors or supercaps, when con-
nected two in series, can be balanced with an ALD9100xx dual package.
Supercaps connected two, three or four in series can be balanced with an
ALD8100xx quad package.
• Simple and economical to use
• Precision factory trimmed
• Automatically regulates and balances leakage currents
• Effective for supercapacitor charge-balancing
• Balances up to 4 supercaps with a single IC package
• Balances 2-cell, 3-cell, 4-cell series-connected supercaps
• Scalable to larger supercap stacks and arrays
• Near zero additional leakage currents
ALD SAB MOSFETs have unique electrical characteristics for active con-
tinuous leakage current regulation and self-balancing of stacked series-
connected supercaps and, at the same time, dissipate near zero leakage
currents, practically eliminating extra power dissipation. For many
applications, SAB MOSFET automatic charge balancing offers a simple,
economical and effective method to balance and regulate supercap
voltages. With SAB MOSFETs, each supercap in a series-connected stack
is continuously and automatically controlled for precision effective supercap
leakage current and voltage balancing.
• Zero leakage at 0.3V below rated voltages
• Balances with series-connect and parallel-connect
• Leakage currents are exponential fuction of cell voltages
• Active current ranges from < 0.3nA to > 1000µA
• Always active, always fast response time
• Minimizes leakage currents and power dissipation
APPLICATIONS
SAB MOSFETs offer a superior alternative solution to other passive
resistor-based or operational amplifier based balancing schemes, which
typically contribute continuous power dissipation due to linear currents at
all voltage levels. They are also a preferred alternative to many other
active supercap charging and balancing regulator ICs where tradeoffs in
cost, efficiency, complexity and power dissipation are important design
considerations.
• Series-connected supercapacitor cell leakage balancing
• Energy harvesting
• Zero-power voltage divider at selected voltages
• Matched current mirrors and current sources
• Zero-power mode maximum voltage limiter
• Scaled supercapacitor stacks and arrays
The SAB MOSFET provides regulation of the voltage across a supercap
cell by increasing its drain current exponentially across the supercap when
supercap voltages increase, and by decreasing its drain current
exponentially across the supercap when supercap voltages decrease.
When a supercap in a supercap stack is charged to a voltage less than
90% of the desired voltage limit, the SAB MOSFET across the supercap
is turned off and there is zero leakage current contribution from the SAB
MOSFET. On the other hand, when the voltage across the supercap is
over the desired voltage limit, the SAB MOSFET is turned on to increase
its drain currents to keep the over-voltage from rising across the supercap.
However, the voltages and leakages of other supercaps in the stack are
lowered simultaneously to maintain near-zero net leakage currents.
PIN CONFIGURATION
ALD8100xx
16
15
14
13
12
11
1
2
3
IC*
IC*
M1
M2
D
D
N1
N1
N2
N2
The ALD8100xx/ALD9100xx SAB MOSFET family offers the user a se-
lection of different threshold voltages for various supercap nominal volt-
age values and desired leakage balancing characteristics. Each SAB
MOSFET generally requires connecting its V+ pin to the most positive
voltage and its V- and IC pins to the most negative voltage within the
package. Note that each Drain pin has an internal reverse biased diode
to its Source pin, and each Gate pin has a reverse biased diode to V-. All
other pins must have voltages within V+ and V- voltage limits. Standard
ESD protection facilities and handling procedures for static sensitive de-
vices must also be used.
G
S
G
S
V-
V-
N1
N2
V+
4
5
V-
M3
V-
M4
D
N4
G
N4
S
N4
D
N3
N3
N3
6
7
8
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
G
S
10
9
Operating Temperature Range*
0°C to +70°C
V-
16-Pin SOIC Package
SCL PACKAGES
ALD810023SCL
ALD810024SCL
ALD810025SCL
ALD810026SCL
ALD810027SCL
ALD810026SCL
*IC pins are internally connected, connect to V-
* Contact factory for industrial temp. range or user-specified threshold voltage values.
©2013 Advanced Linear Devices, Inc., Vers. 1.0
www.aldinc.com
1 of 17
TYPICAL APPLICATIONS
TYPICAL CONNECTION FOR A
FOUR-SUPERCAP STACK
ALD8100xx PIN DIAGRAM
16
15
14
13
12
11
1
2
3
16
15
14
IC*
1
2
3
IC*
V+
M1
M1
M2
M2
D
D
N1
N1
N2
V1
G
S
G
N2
+
+
C1
C2
V-
V-
V-
V-
S
N1
N2
4
5
4
5
13
12
V1
+
V
V-
V+
V3
M3
V-
M4
M3
V-
M4
D
N4
G
N4
S
N4
D
N3
6
7
8
11
10
9
6
7
8
V2
G
10
9
N3
+
+
C4
C3
V-
V-
S
N3
SCHEMATIC DIAGRAM OF A TYPICAL
CONNECTION FOR A FOUR-SUPERCAP STACK
EXAMPLE OF ALD810025 CONNECTION
ACROSS FOUR SUPERCAPS IN SERIES
V+ ≤ +15.0V
V+ = 10.0V
ALD810025
ALD8100XX
I
≤ 80mA
DS(ON)
2, 12
2, 12
M1
V =2.5V
+
+
t
3
3
M1
C1
C1
4
4
V
V
≈ 7.5V
≈ 5.0V
≈ 2.5V
V
1
1
15
15
V =2.5V
t
+
+
+
+
+
+
14
14
M2
13
C2
C3
C4
M2
13
C2
C3
C4
V
2
2
11
11
M3
V =2.5V
t
10
7
10
7
M3
9
9
V
V
3
3
6
6
V =2.5V
t
M4
M4
1, 5, 8, 16
1, 5, 8, 16
1-16 DENOTES PACKAGE PIN NUMBERS
C1-C4 DENOTES SUPERCAPACITORS
1-16 DENOTES PACKAGE PIN NUMBERS
C1-C4 DENOTES SUPERCAPACITORS
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
2 of 17
TYPICAL APPLICATIONS (cont.)
SERIES CONNECTION OF TWO FOUR-SUPERCAP
TYPICAL PARALLEL CONNECTION OF SAB
MOSFETS WITH TWO SUPERCAPS
STACKS EACH WITH A SEPARATE
SAB MOSFET PACKAGE
V+ ≤ +15.0V
ALD8100XX
V+ ≤ +30.0V
(2 x 15.0V)
I
≤ 80mA
DS(ON)
I
≤ 80mA
DS(ON)
15
2, 12
M1
2, 12
M1
+
+
3
14
7
+
3
C1
C2
M2
13
C1A
4
4
V
1
11
M3
6
15
+
+
+
10
14
M4
M2
13
C2A
C3A
C4A
ALD8100XX
STACK 1
9
11
M3
V+ - V ≤ +15.0V
1, 5, 8, 16
A
10
7
9
1-16 DENOTES PACKAGE PIN NUMBERS
C1-C2 DENOTES SUPERCAPACITORS
6
M4
1, 5, 8, 16
EXAMPLE OF ALD810025 CONNECTION
ACROSS TWO SUPERCAPS IN SERIES
V
A
2, 12
V+ = 10.0V
ALD810025
+
3
C1B
M1
4
2, 12
15
3
+
+
+
M1
14
M2
13
C2B
C3B
C4B
4
+
ALD8100XX
STACK 2
C1
15
11
M3
14
V
≤ +15.0V
A
M2
10
7
13
9
V
≈ 5.0V
1
11
M3
6
10
7
M4
9
+
C2
6
1, 5, 8, 16
M4
1-16 DENOTES PACKAGE PIN NUMBERS
C1A-C4B DENOTES SUPERCAPACITORS
1, 5, 8, 16
1-16 DENOTES PACKAGE PIN NUMBERS
C1-C2 DENOTES SUPERCAPACITORS
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
3 of 17
TYPICAL APPLICATIONS (cont.)
TYPICAL SERIES CONNECTION OF SAB
MOSFETS WITH THREE SUPERCAPS
SERIES CONNECTION OF TWO THREE-SUPERCAP
STACKS EACH WITH A SEPARATE
SAB MOSFET PACKAGE
V+ ≤ +15.0V
ALD8100XX
V+ ≤ +30.0V
I
≤ 80mA
DS(ON)
(2 x 15.0V)
2, 12
M1
I
≤ 80mA
DS(ON)
3
+
+
+
C1
2, 12
M1
3
4
+
+
+
C1A
V
V
1
15
4
14
10
ALD8100XX
STACK 1
M2
C2
C3
15
M2
13
13
14
10
V+ - V ≤ +15.0V
A
C2A
C3A
2
11
M3
11
9
M3
1, 5, 6, 7, 8, 16
9
1, 5, 6, 7, 8, 16
1-16 DENOTES PACKAGE PIN NUMBERS
C1-C3 DENOTES SUPERCAPACITORS
V
A
2, 12
+
3
EXAMPLE OF ALD810028 CONNECTION
ACROSS THREE SUPERCAPS IN SERIES
C1B
M1
4
15
V+ = 8.1V
ALD810028
+
+
14
M2
C2B
C3B
13
11
ALD8100XX
STACK 2
2, 12
V =2.8V
3
+
+
+
t
V
≤ +15.0V
C1
A
M1
10
M3
4
9
V
V
= 5.4V
= 2.7V
1
15
V =2.8V
t
14
10
1, 5, 6, 7, 8, 16
M2
C2
C3
13
2
11
1-16 DENOTES PACKAGE PIN NUMBERS
C1A-C3B DENOTES SUPERCAPACITORS
V =2.8V
t
M3
9
1, 5, 6, 7, 8, 16
1-16 DENOTES PACKAGE PIN NUMBERS
C1-C3 DENOTES SUPERCAPACITORS
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
4 of 17
TABLE 1. SUPERCAP AUTO BALANCING (SAB™) MOSFET EQUIVALENT ON RESISTANCE AT
DIFFERENT DRAIN-GATE SOURCE VOLTAGES AND DRAIN-SOURCE ON CURRENTS
Drain-Gate
Gate-
Source
Voltage (V)2
SAB MOSFET DRAIN-SOURCE ON CURRENT
ALD Part Threshold
I
(µA)1
T = 25°C
A
DS(ON)
Number
Voltage
Equivalent ON
V (V)
t
Resistance (MΩ) 0.0001 0.001
0.01
0.1
1
10
100
300
1000
3000 10000
ALD910028
ALD910027
ALD910026
ALD910025
ALD910024
ALD910023
2.80
2.70
2.60
2.50
2.40
2.30
V
= V
(V)
2.4
2.5
2.6
2.7
27
2.8
2.8
2.9
3.02
3.1
3.24
3.3 3.8
GS
DS
R
(MΩ)
24000 2500
260
0.29
0.030
0.01
0.003 0.001 0.0004
DS(ON)
V
= V
(V)
2.3
2.4
2.5
2.6
26
2.7
2.7
2.8
2.92
3.0
3.14
3.2
3.7
GS
DS
R
(MΩ)
23000 2400
250
0.28
0.029
0.01
0.003 0.001 0.0004
DS(ON)
V
= V
(V)
2.2
2.3
2.4
2.5
25
2.6
2.6
2.7
2.82
2.9
3.04
3.1
3.6
GS
DS
R
(MΩ)
22000 2300
240
0.27
0.028
0.01
0.003 0.001 0.0004
DS(ON)
V
= V
(V)
2.1
2.2
2.3
2.4
24
2.5
2.5
2.6
2.72
2.8
2.94
3.0
3.5
GS
DS
R
(MΩ)
21000 2200
230
0.26
0.027
0.01
0.003 0.001 0.0004
DS(ON)
V
= V
(V)
2.0
2.1
2.2
2.3
23
2.4
2.4
2.5
2.62
2.7
2.84
2.9
3.4
GS
DS
R
(MΩ)
20000 2100
220
0.25
0.026
0.009
0.003 0.001 0.0003
DS(ON)
V
= V
(V)
1.9
2.0
2.1
2.2
22
2.3
2.3
2.4
2.52
2.6
2.74
2.8
3.3
GS
DS
R
(MΩ)
19000 2000
210
0.24
0.025
0.009
0.003 0.001 0.0003
DS(ON)
Drain-Gate
Source
Voltage (V)2
Gate-
SAB MOSFET DRAIN-SOURCE ON CURRENT
ALD Part Threshold
I
(µA)1
T = 25°C
A
DS(ON)
Number
Voltage
Equivalent ON
Resistance (MΩ) 0.0001 0.001
V (V)
t
0.01
0.1
1
10
100
300
1000
3000 10000
ALD810028
ALD810027
ALD810026
ALD810025
ALD810024
ALD810023
2.80
2.70
2.60
2.50
2.40
2.30
V
= V
(V)
2.4
2.5
2.6
2.7
27
2.8
2.8
2.9
3.04
3.14
0.01
3.32
3.62 4.22
GS
DS
R
(MΩ)
24000 2500
260
0.29
0.030
0.003 0.001 0.0004
DS(ON)
V
= V
(V)
2.3
2.4
2.5
2.6
26
2.7
2.7
2.8
2.94
3.04
0.01
3.22
3.52
4.12
GS
DS
R
(MΩ)
23000 2400
250
0.28
0.029
0.003 0.001 0.0004
DS(ON)
V
= V
(V)
2.2
2.3
2.4
2.5
25
2.6
2.6
2.7
2.84
2.94
0.01
3.12
3.42
4.02
GS
DS
R
(MΩ)
22000 2300
240
0.27
0.028
0.003 0.001 0.0004
DS(ON)
V
= V
(V)
2.1
2.2
2.3
2.4
24
2.5
2.5
2.6
2.74
2.84
0.01
3.02
3.32
3.92
GS
DS
R
(MΩ)
21000 2200
230
0.26
0.027
0.003 0.001 0.0004
DS(ON)
V
= V
(V)
2.0
2.1
2.2
2.3
23
2.4
2.4
2.5
2.64
2.74
2.92
3.22
3.82
GS
DS
R
(MΩ)
20000 2100
220
0.25
0.026
0.009
0.003 0.001 0.0004
DS(ON)
V
= V
(V)
1.9
2.0
2.1
2.2
22
2.3
2.3
2.4
2.54
2.64
2.82
3.12
3.72
GS
DS
R
(MΩ)
19000 2000
210
0.24
0.025
0.009
0.003 0.001 0.0004
DS(ON)
Selection of a SAB MOSFET device depends on a set of desired voltage vs. current characteristics that closely match the selected nominal bias voltage and
bias currents that provide the best leakage and regulation profile of a supercap load. The V table, where Drain-Gate Source Voltage (V = V ) gives
t
GS DS
a range of V
= V
bias voltages as different V
load voltages. At each V
= V
bias voltage, a corresponding Drain-Source ON Current
GS
DS
supercap
GS
DS
(I
) is produced by a specific SAB MOSFET, which can be viewed as the amount of current available to compensate for supercap leakage current
DS(ON)
imbalances and results in an Equivalent ON Resistance (R
)across a supercap cell. Selection of a supercap bias voltage with a SAB MOSFET
that corresponds to the maximum supercap leakage current would result in the best possible tradeoff between leakage current balancing and
DS(ON)
I
DS(ON)
voltage regulation.
Notes: 1) The SAB MOSFET Drain Source ON Current (I ) is the maximum current available to offset the supercapacitor leakage current.
DS(ON)
2) The Drain-Gate Source Voltage (V =V ) is normally the same as the voltage across the supercapacitor.
GS DS
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
5 of 17
GENERAL DESCRIPTION (cont.)
SUPERCAPS
As all ALD8100xx and ALD9100xx devices operate the same way,
an ALD810025 is used in the following illustration. At voltages be-
low its threshold voltage, the ALD810025 rapidly turns off at a rate
of approximately one decade of current per 104mV of voltage drop.
Supercaps are typically rated with a nominal recommended
working voltage established for long life at their maximum rated
operating temperature. Excessive supercap voltages that exceed
its rated voltage for a prolonged time period will result in reduced
lifetime and eventual rupture and catastrophic failure. To prevent
such an occurrence, a means of automatically adjusting (charge-
balancing) and monitoring the maximum voltage is required in most
applications having two or more supercaps connected in series,
due to their different internal leakage currents that vary from one
supercap to another.
Hence, at V
= V
= 2.396V, the ALD810025 has drain current
= 2.292V, the ALD810025 drain current
GS
of 0.1µA. At V
DS
= V
GS
DS
GS
0.001µA. It is apparent that at V
becomes 0.01µA. At V
= V
= 2.188V, the drain current is
DS
= VDS ≤ 2.10V, the drain leak-
GS
age current ≤0.00014µA, which is essentially zero when compared
to 1µA initial threshold current. When individual V
= V volt-
DS
GS
ages fall below 1.9V, the SAB MOSFET leakage current essentially
goes to zero (~70pA).
The supercap leakage current itself is a variable function of its many
parameters such as aging, initial leakage current at zero input
voltage, the material and construction of the supercap. Its leakage
is also a function of the charging voltage, the charging current,
operating temperature range and the rate of change of many of
these parameters. Supercap balancing must accommodate these
changing conditions.
This exponential relationship between the Drain-Gate Source
Voltage and the Drain-Source ON Current is an important
consideration for replacing certain supercap charge balancing
applications currently using fixed resistor or operational amplifier
charge balancing. These other conventional charge-balancing cir-
cuits would continue to dissipate a significant amount of current,
even after the voltage across the supercaps had dropped, because
the current dissipated is a linear function, rather than an exponen-
tial function, of the supercap voltage (I = V/R). For supercap stacks
consisting of more than two supercaps, the challenge of supercap
balancing becomes more onerous.
SUPERCAP CHARGING AND DISCHARGING
During supercap charging, consideration must be paid to limit the
rate of supercap charging so that excessive voltage and current do
not build up across any two pins of the SAB MOSFETs, even
momentarily, to exceed their absolute maximum rating. In most
cases though, this is not an issue, as there may be other design
constraints elsewhere in the circuit to limit the rate of charging or
discharging the supercaps. For many types of applications, no
further action, other than checking the voltage and current excur-
sions, or including a simple current-limiting charging resistor, is nec-
essary.
For other IC circuits that offer charge balancing, active power is still
being consumed even if the supercap voltage falls below 2.0V. For
a four-cell supercap stack, this translates into a 2.0V x 4 ~= 8.0V
power supply for an IC charge-balancing circuit. Even a two-cell
supercap stack would be operating such an IC circuit with
2.0V x 2 = 4V. A supercap stack with SAB MOSFET charge-
balancing, on the other hand, would be the only way to lose
exponentially decreasing amount of charge with time and preserve
by far the greatest amount of charge on each of the supercaps, by
not adding charge loss to the leakages contributed by the supercaps
themselves.
CHARACTERISTICS OF SUPERCAP AUTO BALANCING
(SAB™) MOSFETS
At V
= V
voltages of the ALD810025 above its V threshold
t
GS
voltage, its drain current behavior has the opposite near-exponen-
tial effect. At V = V = 2.60V, for example, the ALD810025
DS
The principle behind the Supercap Auto Balancing MOSFET in
balancing supercaps is basically simple. It is based on the natural
threshold characteristics of a MOSFET device. The threshold volt-
age of a MOSFET is the voltage at which a MOSFET turns on and
starts to conduct a current. The drain current of the MOSFET, at or
below its threshold voltage, is an exponentially non-linear function
of its gate voltage. Hence, for small changes in the MOSFET’s
gate voltage, its on-current can vary greatly, by orders of magni-
tude. ALD’s SAB MOSFETs are designed to take advantage of
this fundamental device characteristic.
GS
DS
I
increases tenfold to 10µA. Similarly, I
becomes
DS(ON)
100µA for a V
DS(ON)
voltage increase to 2.74V, and 300µA at
= V
GS
2.84V. (See Table 1)
DS
As I
changes rapidly with applied voltage on the Drain-Gate
DS(ON)
to Source pins, the SAB MOSFET device acts like a voltage
limiting regulator with self-adjusting current levels. When this SAB
MOSFET is connected across a supercap cell, the total leakage
current across the supercap is compensated and corrected by the
SAB MOSFET.
SAB MOSFETs can be connected in parallel or in a series, to suit
the desired leakage current characteristics, in order to charge-
balance an array of supercaps. The combined SAB MOSFET and
supercap array is designed to be self-regulating with various
supercap array leakage mismatches and environmental
temperature changes. The SAB MOSFETs can also be used only
in the subthreshold mode, meaning the SAB MOSFET is used
entirely at min., nominal and max. operating voltages in voltage
ranges below its specified threshold voltage.
Consider the case when two supercap cells are connected in
series, each with a SAB MOSFET connected across it in the
V mode (V
= V ), charged by a power supply to a voltage
t
DS
GS
equal to 2 x V .
S
If the top supercap has a higher internal leakage current than the
bottom supercap, the voltage V across it tends to drop lower
S(top)
than that of the bottom supercap. The SAB MOSFET I
across
DS(ON)
the top supercap, sensing this voltage drop, drops off rapidly.
Meanwhile, the bottom supercap V voltage tends to rise,
For the ALD8100xx/ALD9100xx family of SAB MOSFETs, the
S(bottom)
threshold voltage V of a SAB MOSFET is defined as its drain-gate
as V
= (2 x V ) - V
. This tendency for the voltage
t
S(bottom)
rise also increases V
S
S(top)
source voltage at a drain-source ON current, I
its gate and drain terminals are connected together (V
GS
= 1µA when
= V ).
= V voltage of the SAB MOSFET across
DS(ON)
GS
DS
the bottom supercap. This increased V
cause the I
rapidly as well. The excess leakage current of the top supercap
would now leak across the bottom SAB MOSFET, reducing the
voltage rise tendency of the lower supercap. With this self-regulat-
= V voltage would
DS
DS
GS
current of the bottom SAB MOSFET to increase
This voltage is specified as xx, where the threshold voltage is in
0.10V increments. For example, the ALD810025 features a 2.50V
threshold voltage MOSFET with drain-gate source voltage,
DS(ON)
V = 2.50V, and I
t
= 1µA. The SAB MOSFET has a precision
DS(ON)
trimmed threshold voltage where the tolerance of the threshold
voltage is very tight, typically 2.50V +/-0.005V. When a 2.50V drain-
gate source voltage bias is applied across an ALD810025/
ing mechanism, the top supercap, V
while the bottom supercap, V
creating simultaneously opposing actions of the supercap leakage
currents.
, voltage tends to rise
, voltage tends to drop,
S(top)
S(bottom)
ALD910025 SAB MOSFET, it conducts an I
= 1µA.
DS(ON)
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
6 of 17
GENERAL DESCRIPTION (cont.)
A DESIGN EXAMPLE
With appropriate design and selection of a specific SAB MOSFET
device for a given pair of supercaps, it is now possible to have
regulation and balancing of two series-connected supercaps, at
essentially no extra leakage current, since the SAB MOSFET only
conducts the difference in leakage current between the two
supercaps.
A single 5V power supply using two 2.7V rated supercaps con-
nected in a series and a single SAB MOSFET array package.
For a supercap with:
1) max. operating voltage = 2.70V and
2) max. leakage current = 10µA at 70°C.
Likewise, the case of the bottom supercap having a higher leakage
current than that of the top supercap works in similar fashion, with
3) At 2.50V, the supercap max. leakage current = 2.5µA at 25°C.
the tendency of the bottom supercap, V
, voltage to drop,
S(bottom)
compensated by the tendency of the top supercap, V
, voltage
S(top)
Next, pick ALD810026, a SAB MOSFET with V = 2.60V. For this
t
to drop as well, effected by the top SAB MOSFET. This SAB
MOSFET charge balancing scheme also extends to up to four
supercaps in a series network by using four SAB MOSFETs in a
single ALD8100xx SAB MOSFET package.
device, at V
= V = 2.60V, the nominal I
= 1µA. Per the
DS(ON)
= 2.50V, I ~= 0.1µA.
DS(ON)
GS
leakage current table, at V
DS
= V
GS
DS
At a nominal operating voltage of 2.50V, the additional leakage
current contribution by the ALD810026 is therefore 0.1µA. The
total current for the supercap and the SAB MOSFET = 2.5µA +
0.1µA ~= 2.6µA @ 2.50V operating voltage. At an operating
voltage of 2.40V, the additional ALD810026 leakage current
decreases to about 0.01µA.
As ambient temperature increases, the supercap leakage current,
as a function of temperature, increases. The SAB MOSFET thresh-
old voltage is reduced with temperature increase, which causes the
drain current to increase with temperature as well. This drain
current increase compensates for the leakage current increase within
the supercap, reducing the overall supercap temperature leakage
effect and preserving charge balancing effectiveness. This tem-
perature compensation assumes that all the supercaps and the SAB
MOSFETs are in the same temperature environments.
At a max. voltage of 2.70V across the ALD810026 SAB MOSFET,
V
GS
= V
= 2.70V results in I = 10µA. 10µA is also the
DS
DS(ON)
max. leakage current margin, the difference between top and bot-
tom supercap leakage currents that can be compensated.
Each drain pin of a SAB MOSFET has an internal reverse biased
diode to its source pin, which can become forward biased if the
drain voltage should become negative relative to its source pin. This
forward-biased diode clamps the drain voltage to limit the negative
voltage relative to its source voltage, and is limited to 80mA max.
rated current between any two pins.
If a higher max. leakage current margin is desired for an applica-
tion, then the selection may need to go to the next SAB MOSFET
down in the series, ALD810025. For an ALD810025 operating at a
max. rated voltage of 2.70V, the max. leakage current margin is
~= 50µA. For this device, the nominal operating current at 2.50V is
~= 1µA, which is the average current consumption for the series-
connected stack. The total current for the supercap and the SAB
MOSFET is = 2.5µA + 1µA ~= 3.5µA @ 2.50V operating voltage.
SPECIFYING SAB™ MOSFETS
Because the SAB MOSFET is always active and always in “on”
mode, there is no circuit switching or sleep mode involved. This
may become an important factor when the time interval between
the supercap discharging or recharging, and other events happen-
ing in the application, is long, unknown or variable.
The process of selecting SAB MOSFETs begins by analyzing the
parameters and the requirements of a given selection of supercaps:
1) For better leakage current matching results, pick the same make
and model of supercaps to be connected in a series. If possible,
select supercaps from the same production batch. (Note: SAB
MOSFETs are precisely set at the factory and specified such that
their lot-to-lot and MOSFET-to-MOSFET variation is not a concern.)
In real life situations, the actual circuit behavior is a little different,
further reducing overall leakage currents from both supercaps and
SAB MOSFETs, due to the automatic compensation for different
leakage current levels by both the supercaps themselves and in
combination with the SAB MOSFETs. Take the above example of
two supercaps in series, assuming that the top supercap is leaking
10µA and the bottom one leaking 4µA (both at the rated 2.7V max.)
while the power supply remains at 5V DC. The actual voltage across
the top supercap tends to be less than 50% of 5.0V, due to its
internal leakage current, and results in a lowered current level be-
cause the voltage across it tends to be lower as well. The total
voltage across both supercaps is still 5.0V, so each supercap would
experience a lowered voltage at less than maximum rated voltage
of 2.7V, thereby resulting in reduced overall leakage currents in
each of the two supercaps.
2) Determine the leakage current range of the supercaps.
3) Determine the desired nominal operating voltage of the supercaps.
4) Determine the maximum operating voltage rating of the supercaps.
5) Calculate or measure the maximum leakage current of the
supercap at the maximum rated operating voltage.
6) Determine the operating temperature range of the supercaps.
7) Determine any additional level of operating leakage current in
the system.
These leakage currents are then further regulated by the SAB
MOSFETs connected across each of the supercaps. The end re-
sult is a compensated condition where the top supercap has ~2.4V
and the bottom cap has a voltage of ~2.6V. The excess leakage
current of the top supercap is bypassed across the bottom SAB
MOSFET, so that there is little or no net additional leakage current
introduced by the bottom SAB MOSFET. Meanwhile the top SAB
MOSFET, with ~2.4V across it, is biased to conduct (or leak) very
little drain current. Note also that the top supercap is now biased at
~2.4V and, therefore, would experience less current leakage than
Next, determine the normalized drain current of a SAB MOSFET at
a pre-selected operating voltage. For example, theALD810025 has
a rated leakage, or drain, current of 1µA at applied drain-gate source
voltage of 2.50V. If the desired normalized drain current is 0.01µA,
then the ALD810025 would give a bias drain-gate source voltage of
approximately 2.3V at that current, which produces an equivalent
ON resistance of 2.3V/0.01µA ~= 230MΩ (using the rule of thumb
of one decade of current change per 0.10V of V
= V change).
GS
DS
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
7 of 17
GENERAL DESCRIPTION (cont.)
when it is at 2.7V. The primary benefit here is that this process of
For stacks of series-connected supercaps consisting of more than
three or four supercaps, it is possible to use a single SAB MOSFET
array for every three or four supercap stacks connected in series.
Multiple SAB MOSFET arrays can be arrayed across multiple
supercap stacks to operate at higher operating voltages. It is
important to limit the voltage across any two pins within a single
SAB MOSFET array package to be less than its absolute
maximum voltage and current ratings.
leakage balancing is fully automatic and works for a variety of
supercaps, each with a different leakage characteristic profile of its
own.
A second benefit to note is that with ~2.4V and ~2.6V across the
two supercaps, in this example, the actual current level difference
between the top and the bottom SAB MOSFETs is at about a 100:1
ratio (~2 orders of magnitude). The net additional leakage current
contributed by theALD8110026 in the design example above would,
therefore, be approximately 0.01µA. In this case, the difference in
leakage currents between the two supercaps can have a ratio of
100:1 and could still have charge balancing and voltage regulation.
ENERGY HARVESTING APPLICATIONS
Supercaps offer an important benefit for energy harvesting appli-
cations from a low energy source, buffering and storing such
energy to drive a higher power load.
The dynamic response of a SAB MOSFET circuit is very fast, and
the typical response time is determined by the R C time constant of
the equivalent ON resistance value of the SAB MOSFET and the
capacitance value of the supercap. In many cases the R value is
small initially, responding rapidly to a large voltage transient by
having a smaller R C time constant. As the voltages settle down,
the equivalent R increases. As these R and C values can become
very large, it can take a long time for the voltages across the
supercaps to settle down to steady state leakage current levels.
The direction of the voltage movements across the supercap,
however, would indicate the trend that the supercap voltages are
moving away from the voltage limits.
For energy harvesting applications, supercap leakage currents are
a critical factor, as the average energy harvesting input charge must
exceed the average supercap internal leakage currents in order for
any net energy to be harvested and saved. Often times the input
energy is variable, meaning that its input voltage and current
magnitude is not constant and may be dependent upon a whole set
of other parameters such as the source energy availability, energy
sensor conversion efficiency, etc.
For these types of applications, it is essential to pick supercaps
with low leakage specifications and to use SAB MOSFETs that
minimize the amount of energy loss due to leakage currents.
PARALLEL-CONNECTED AND SERIES-CONNECTED SAB
MOSFETS
For up to 90% of the initial voltages of a supercap used in energy
harvesting applications, supercap charge loss is lower than its
maximum leakage rating, at less than its max. rated voltage. SAB
MOSFETs used for charge balancing, due to their high input thresh-
old voltages, would be completely turned off, consuming zero drain
current while the supercap is being charged, maximizing any
energy harvesting gathering efforts. The SAB MOSFET would not
become active until the supercap is already charged to over 90%
of its max. rated voltage. The trickle charging of supercaps with
energy harvesting techniques tends to work well with SAB MOSFETs
as charge balancing devices, as it is less likely to have high
transient energy spurts resulting in excessive voltage or current
excursions.
In the previous design example, note that theALD810026 is a quad
pack, with four SAB MOSFETs in a single SOIC package. For a
standard configuration of two supercaps connected in series, the
ALD9100xx dual SAB MOSFET is recommended for charge
balancing. If a two-stack supercap requires charge balancing, then
there is also an option to parallel-connect two SAB MOSFETs of a
quad ALD8100xx for each of the two supercaps. Parallel-connec-
tion generally means that the drain, gate and source terminals of
each of two SAB MOSFETs are connected together to form a
MOSFET with a single drain, a single gate and a single source
terminal with twice the output currents. In this case, at a nominal
operating voltage of 2.50V, the additional leakage current contribu-
tion by the SAB MOSFET is equal to 2 x 0.1µA = 0.2µA. The total
current for the supercaps and the SB MOSFET is = 2.5µA + 0.2µA
~= 2.7µA @ 2.50V operating voltage. At max. voltage of 2.70V
If an energy harvesting source only provides a few µA of current,
the power budget does not allow wasting any of this current on
capacitor leakage currents and power dissipation of resistor or
operational amplifier based charge-balancing circuits. It may also
be important to reduce long term leakage currents, as energy
harvesting charging at low levels may take up to many days.
across the SAB MOSFET, V
= V = 2.70V results in a drain
GS
DS
current of 2 x 10µA = 20µA. So this configuration would be chosen
to increase max. charge balancing leakage current at 2.70V to 20µA,
at the expense of an additional 0.1µA leakage at 2.50V.
In summary, in order for an energy harvesting application to be
successful, the input energy harvested must exceed all the energy
required due to the leakages of the supercaps and the charge-
balancing circuits, plus any load requirements. With their unique
balancing characteristics and near-zero charge loss, SAB MOSFETs
are ideal devices for use in supercap charge-balancing in energy
harvesting applications.
This method also extends to four supercaps in series, although this
may require two separate ALD810026 packages, if the maximum
voltage ratings of the SAB MOSFET are exceeded.
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
8 of 17
ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage
Drain-Source voltage, V
Gate-Source voltage, V
Operating Current
Power dissipation
15.0V
10.6V
10.6V
80mA
500mW
DS
GS
Operating temperature range SCL
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V V = GND T = 25°C unless otherwise specified
A
ALD810023
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Gate Threshold Voltage
Offset Voltage
V
V
2.28
2.30
5
2.32
20
V
V
V
V
V
V
=V I
DS; DS(ON)
=1µA
=1µA
t
GS
mV
- V or V - V
t2 t3
OS
t1
t4
t4
Offset Voltage Tempco
Gate Threshold Voltage Tempco
TC
TC
5
µV/C
mV/C
- V or V - V
t2 t3
VOS
Vt
t1
-2.2
=V
=V
I
DS; DS(ON)
GS
GS
Drain Source On Current
Drain Source On Resistance
I
R
0.0001
19000
µA
MΩ
=1.90V
=2.00V
=2.10V
=2.20V
=2.30V
=2.40V
=2.54V
=2.64V
=2.82V
=3.12V
=3.72V
DS(ON)
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.001
2000
µA
MΩ
V
V
V
V
V
V
V
V
V
V
=V
=V
=V
=V
=V
=V
=V
=V
=V
=V
DS(ON)
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.01
210
µA
MΩ
DS(ON)
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.1
22
µA
MΩ
DS(ON)
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
1
µA
MΩ
DS(ON)
DS(ON)
2.3
Drain Source On Current
Drain Source On Resistance
I
R
10
µA
MΩ
DS(ON)
DS(ON)
0.24
Drain Source On Current
Drain Source On Resistance
I
R
100
µA
MΩ
DS(ON)
DS(ON)
0.025
Drain Source On Current
Drain Source On Resistance
I
R
300
µA
MΩ
DS(ON)
DS(ON)
0.009
Drain Source On Current
Drain Source On Resistance
I
R
1000
µA
MΩ
DS(ON)
DS(ON)
0.003
Drain Source On Current
Drain Source On Resistance
I
R
3000
µA
MΩ
DS(ON)
DS(ON)
0.001
Drain Source On Current
Drain Source On Resistance
I
R
10000
µA
MΩ
DS(ON)
DS(ON)
0.0004
Drain Source Breakdown Voltage
Drain Source Leakage Current1
BV
I
10.6
V
DSX
10
5
400
4
pA
nA
V
V
=V
=V
= +125°C
=V - 1.0
t
t
DS (OFF)
GS
GS
DS
DS
=V - 1.0,
T
A
Gate Leakage Current1
I
200
1
pA
nA
V
V
=5.0V, V
=0V
=0V,
GSS
GS
DS
DS
=5.0V, V
GS
= +125°C
T
A
Input Capacitance
Turn-on Delay Time
Turn-off Delay Time
C
15
pF
V
=0V, V
=5.0V
DS
ISS
GS
t
t
on
off
10
10
60
ns
ns
dB
Crosstalk
f = 100KHz
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
9 of 17
ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage
Drain-Source voltage, V
Gate-Source voltage, V
Operating Current
Power dissipation
15.0V
10.6V
10.6V
80mA
500mW
DS
GS
Operating temperature range SCL
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V V = GND T = 25°C unless otherwise specified
A
ALD810024
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Gate Threshold Voltage
Offset Voltage
V
V
2.38
2.40
5
2.42
20
V
V
V
V
V
V
=V I
DS; DS(ON)
=1µA
=1µA
t
GS
mV
- V or V - V
t2 t3
OS
t1
t4
t4
Offset Voltage Tempco
Gate Threshold Voltage Tempco
TC
TC
5
µV/C
mV/C
- V or V - V
t2 t3
VOS
Vt
t1
-2.2
=V
=V
I
DS; DS(ON)
GS
GS
Drain Source On Current
Drain Source On Resistance
I
R
0.0001
20000
µA
MΩ
=2.00V
=2.10V
=2.20V
=2.30V
=2.40V
=2.50V
=2.64V
=2.74V
=2.92V
=3.22V
=3.82V
DS(ON)
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.001
2100
µA
MΩ
V
V
V
V
V
V
V
V
V
V
=V
=V
=V
=V
=V
=V
=V
=V
=V
=V
DS(ON)
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.01
220
µA
MΩ
DS(ON)
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.1
23
µA
MΩ
DS(ON)
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
1
µA
MΩ
DS(ON)
DS(ON)
2.4
Drain Source On Current
Drain Source On Resistance
I
R
10
µA
MΩ
DS(ON)
DS(ON)
0.25
Drain Source On Current
Drain Source On Resistance
I
R
100
µA
MΩ
DS(ON)
DS(ON)
0.026
Drain Source On Current
Drain Source On Resistance
I
R
300
µA
MΩ
DS(ON)
DS(ON)
0.009
Drain Source On Current
Drain Source On Resistance
I
R
1000
µA
MΩ
DS(ON)
DS(ON)
0.003
Drain Source On Current
Drain Source On Resistance
I
R
3000
µA
MΩ
DS(ON)
DS(ON)
0.001
Drain Source On Current
Drain Source On Resistance
I
R
10000
µA
MΩ
DS(ON)
DS(ON)
0.0004
Drain Source Breakdown Voltage
Drain Source Leakage Current1
BV
I
10.6
V
DSX
10
5
400
4
pA
nA
V
V
=V
=V
= +125°C
=V - 1.0
t
t
DS (OFF)
GS
GS
DS
DS
=V - 1.0,
T
A
Gate Leakage Current1
I
200
1
pA
nA
V
V
=5.0V, V
=5.0V, V
=0V
=0V,
GSS
GS
GS
= +125°C
DS
DS
T
A
Input Capacitance
Turn-on Delay Time
Turn-off Delay Time
C
15
pF
V
=0V, V
=5.0V
DS
ISS
GS
t
t
on
off
10
10
60
ns
ns
dB
Crosstalk
f = 100KHz
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
10 of 17
ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage
Drain-Source voltage, V
Gate-Source voltage, V
Operating Current
Power dissipation
15.0V
10.6V
10.6V
80mA
500mW
DS
GS
Operating temperature range SCL
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V V = GND T = 25°C unless otherwise specified
A
ALD810025
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Gate Threshold Voltage
Offset Voltage
V
V
2.48
2.50
5
2.52
20
V
V
V
V
V
V
=V I
DS; DS(ON)
=1µA
=1µA
t
GS
mV
- V or V - V
t2 t3
OS
t1
t4
t4
Offset Voltage Tempco
Gate Threshold Voltage Tempco
TC
5
µV/C
mV/C
- V or V - V
t2 t3
VOS
Vt
t1
TC
-2.2
=V
=V
I
DS; DS(ON)
GS
GS
Drain Source On Current
Drain Source On Resistance
I
R
0.0001
21000
µA
MΩ
=2.10V
=2.20V
=2.30V
=2.40V
=2.50V
=2.60V
=2.74V
=2.84V
=3.02V
=3.32V
=3.92V
DS(ON)
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.001
2200
µA
MΩ
V
V
V
V
V
V
V
V
V
V
=V
=V
=V
=V
=V
=V
=V
=V
=V
=V
DS(ON)
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.01
230
µA
MΩ
DS(ON)
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.1
24
µA
MΩ
DS(ON)
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
1
µA
MΩ
DS(ON)
DS(ON)
2.5
Drain Source On Current
Drain Source On Resistance
I
R
10
µA
MΩ
DS(ON)
DS(ON)
0.26
Drain Source On Current
Drain Source On Resistance
I
R
100
µA
MΩ
DS(ON)
DS(ON)
0.027
Drain Source On Current
Drain Source On Resistance
I
R
300
µA
MΩ
DS(ON)
DS(ON)
0.01
Drain Source On Current
Drain Source On Resistance
I
R
1000
µA
MΩ
DS(ON)
DS(ON)
0.003
Drain Source On Current
Drain Source On Resistance
I
R
3000
µA
MΩ
DS(ON)
DS(ON)
0.001
Drain Source On Current
Drain Source On Resistance
I
R
10000
µA
MΩ
DS(ON)
DS(ON)
0.0004
Drain Source Breakdown Voltage
Drain Source Leakage Current1
BV
10.6
V
DSX
I
10
5
400
4
pA
nA
V
V
=V
=V
= +125°C
=V - 1.0
t
t
DS (OFF)
GS
GS
DS
DS
=V - 1.0,
T
A
Gate Leakage Current1
I
200
1
pA
nA
V
V
=5.0V, V
=0V
=0V,
GSS
GS
DS
DS
=5.0V, V
GS
= +125°C
T
A
Input Capacitance
Turn-on Delay Time
Turn-off Delay Time
C
15
pF
V
=0V, V =5.0V
DS
ISS
GS
t
on
off
10
10
60
ns
ns
dB
t
Crosstalk
f = 100KHz
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
11 of 17
ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage
Drain-Source voltage, V
Gate-Source voltage, V
Operating Current
Power dissipation
15.0V
10.6V
10.6V
80mA
500mW
DS
GS
Operating temperature range SCL
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V V = GND T = 25°C unless otherwise specified
A
ALD810026
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Gate Threshold Voltage
Offset Voltage
V
V
2.58
2.60
5
2.62
20
V
V
V
V
V
V
=V I
DS; DS(ON)
=1µA
=1µA
t
GS
mV
- V or V - V
t2 t3
OS
t1
t4
t4
Offset Voltage Tempco
Gate Threshold Voltage Tempco
TC
TC
5
µV/C
mV/C
- V or V - V
t2 t3
VOS
Vt
t1
-2.2
=V
=V
I
DS; DS(ON)
GS
GS
Drain Source On Current
Drain Source On Resistance
I
R
0.0001
22000
µA
MΩ
=2.20V
=2.30V
=2.40V
=2.50V
=2.60V
=2.70V
=2.84V
=2.94V
=3.12V
=3.42V
=4.02V
DS(ON)
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.001
2300
µA
MΩ
V
V
V
V
V
V
V
V
V
V
=V
=V
=V
=V
=V
=V
=V
=V
=V
=V
DS(ON)
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.01
240
µA
MΩ
DS(ON)
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.1
25
µA
MΩ
DS(ON)
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
1
µA
MΩ
DS(ON)
DS(ON)
2.6
Drain Source On Current
Drain Source On Resistance
I
R
10
µA
MΩ
DS(ON)
DS(ON)
0.27
Drain Source On Current
Drain Source On Resistance
I
R
100
µA
MΩ
DS(ON)
DS(ON)
0.028
Drain Source On Current
Drain Source On Resistance
I
R
300
µA
MΩ
DS(ON)
DS(ON)
0.01
Drain Source On Current
Drain Source On Resistance
I
R
1000
µA
MΩ
DS(ON)
DS(ON)
0.003
Drain Source On Current
Drain Source On Resistance
I
R
3000
µA
MΩ
DS(ON)
DS(ON)
0.001
Drain Source On Current
Drain Source On Resistance
I
R
10000
µA
MΩ
DS(ON)
DS(ON)
0.0004
Drain Source Breakdown Voltage
Drain Source Leakage Current1
BV
I
10.6
V
DSX
10
5
400
4
pA
nA
V
V
=V
=V
= +125°C
=V - 1.0
t
t
DS (OFF)
GS
GS
DS
DS
=V - 1.0,
T
A
Gate Leakage Current1
I
200
1
pA
nA
V
V
=5.0V, V
=5.0V, V
=0V
=0V,
GSS
GS
GS
= +125°C
DS
DS
T
A
Input Capacitance
Turn-on Delay Time
Turn-off Delay Time
C
15
pF
V
=0V, V
=5.0V
DS
ISS
GS
t
t
on
off
10
10
60
ns
ns
dB
Crosstalk
f = 100KHz
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
12 of 17
ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage
Drain-Source voltage, V
Gate-Source voltage, V
Operating Current
Power dissipation
15.0V
10.6V
10.6V
80mA
500mW
DS
GS
Operating temperature range SCL
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V V = GND T = 25°C unless otherwise specified
A
ALD810027
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Gate Threshold Voltage
Offset Voltage
V
V
2.68
2.70
5
2.72
20
V
V
V
V
V
V
=V I
DS; DS(ON)
=1µA
=1µA
t
GS
mV
- V or V - V
t2 t3
OS
t1
t4
t4
Offset Voltage Tempco
Gate Threshold Voltage Tempco
TC
TC
5
µV/C
mV/C
- V or V - V
t2 t3
VOS
Vt
t1
-2.2
=V
=V
I
DS; DS(ON)
GS
GS
Drain Source On Current
Drain Source On Resistance
I
R
0.0001
23000
µA
MΩ
=2.30V
=2.40V
=2.50V
=2.60V
=2.70V
=2.80V
=2.94V
=3.04V
=3.22V
=3.52V
=4.12V
DS(ON)
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.001
2400
µA
MΩ
V
V
V
V
V
V
V
V
V
V
=V
=V
=V
=V
=V
=V
=V
=V
=V
=V
DS(ON)
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.01
250
µA
MΩ
DS(ON)
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.1
26
µA
MΩ
DS(ON)
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
1
µA
MΩ
DS(ON)
DS(ON)
2.7
Drain Source On Current
Drain Source On Resistance
I
R
10
µA
MΩ
DS(ON)
DS(ON)
0.28
Drain Source On Current
Drain Source On Resistance
I
R
100
µA
MΩ
DS(ON)
DS(ON)
0.029
Drain Source On Current
Drain Source On Resistance
I
R
300
µA
MΩ
DS(ON)
DS(ON)
0.01
Drain Source On Current
Drain Source On Resistance
I
R
1000
µA
MΩ
DS(ON)
DS(ON)
0.003
Drain Source On Current
Drain Source On Resistance
I
R
3000
µA
MΩ
DS(ON)
DS(ON)
0.001
Drain Source On Current
Drain Source On Resistance
I
R
10000
µA
MΩ
DS(ON)
DS(ON)
0.0004
Drain Source Breakdown Voltage
Drain Source Leakage Current1
BV
I
10.6
V
DSX
10
5
400
4
pA
nA
V
V
=V
=V
= +125°C
=V - 1.0
t
t
DS (OFF)
GS
GS
DS
DS
=V - 1.0,
T
A
Gate Leakage Current1
I
200
1
pA
nA
V
V
=5.0V, V
=0V
=0V,
GSS
GS
DS
DS
=5.0V, V
GS
= +125°C
T
A
Input Capacitance
Turn-on Delay Time
Turn-off Delay Time
C
15
pF
V
=0V, V
=5.0V
DS
ISS
GS
t
t
on
off
10
10
60
ns
ns
dB
Crosstalk
f = 100KHz
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
13 of 17
ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage
Drain-Source voltage, V
Gate-Source voltage, V
Operating Current
Power dissipation
15.0V
10.6V
10.6V
80mA
500mW
DS
GS
Operating temperature range SCL
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V V = GND T = 25°C unless otherwise specified
A
ALD810028
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Gate Threshold Voltage
Offset Voltage
V
V
2.78
2.80
5
2.82
20
V
V
V
V
V
V
=V I
DS; DS(ON)
=1µA
=1µA
t
GS
mV
- V or V - V
t2 t3
OS
t1
t4
t4
Offset Voltage Tempco
Gate Threshold Voltage Tempco
TC
5
µV/C
mV/C
- V or V - V
t2 t3
VOS
Vt
t1
TC
-2.2
=V
=V
I
DS; DS(ON)
GS
GS
Drain Source On Current
Drain Source On Resistance
I
R
0.0001
24000
µA
MΩ
=2.40V
=2.50V
=2.60V
=2.70V
=2.80V
=2.90V
=3.04V
=3.14V
=3.32V
=3.62V
=4.22V
DS(ON)
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.001
2500
µA
MΩ
V
V
V
V
V
V
V
V
V
V
=V
=V
=V
=V
=V
=V
=V
=V
=V
=V
DS(ON)
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.01
260
µA
MΩ
DS(ON)
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
0.1
27
µA
MΩ
DS(ON)
DS(ON)
Drain Source On Current
Drain Source On Resistance
I
R
1
µA
MΩ
DS(ON)
DS(ON)
2.8
Drain Source On Current
Drain Source On Resistance
I
R
10
µA
MΩ
DS(ON)
DS(ON)
0.29
Drain Source On Current
Drain Source On Resistance
I
R
100
µA
MΩ
DS(ON)
DS(ON)
0.030
Drain Source On Current
Drain Source On Resistance
I
R
300
µA
MΩ
DS(ON)
DS(ON)
0.01
Drain Source On Current
Drain Source On Resistance
I
R
1000
µA
MΩ
DS(ON)
DS(ON)
0.003
Drain Source On Current
Drain Source On Resistance
I
R
3000
µA
MΩ
DS(ON)
DS(ON)
0.001
Drain Source On Current
Drain Source On Resistance
I
R
10000
µA
MΩ
DS(ON)
DS(ON)
0.0004
Drain Source Breakdown Voltage
Drain Source Leakage Current1
BV
10.6
V
DSX
I
10
5
400
4
pA
nA
V
V
=V
=V
= +125°C
=V - 1.0
t
t
DS (OFF)
GS
GS
DS
DS
=V - 1.0,
T
A
Gate Leakage Current1
I
200
1
pA
nA
V
V
=5.0V, V
=0V
=0V,
GSS
GS
DS
DS
=5.0V, V
GS
= +125°C
T
A
Input Capacitance
Turn-on Delay Time
Turn-off Delay Time
C
15
pF
V
=0V, V
=5.0V
DS
ISS
GS
t
on
off
10
10
60
ns
ns
dB
t
Crosstalk
f = 100KHz
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
14 of 17
TYPICAL PERFORMANCE CHARACTERISTICS
DRAIN-GATE SOURCE VOLTAGE
vs. DRAIN SOURCE ON CURRENT
DRAIN-GATE SOURCE VOLTAGE
vs. DRAIN SOURCE ON CURRENT
1.0 E-02
1.0 E-03
1.0 E-04
1.0 E-05
1.0 E-06
1.0 E-07
1.0 E-08
1.0 E-09
1.0 E-10
1.0 E-03
1.0 E-04
1.0 E-05
1.0 E-06
1.0 E-07
1.0 E-08
1.0 E-09
T
A
T
A
= + 25°C
+70°C
+85°C
+25°C
0°C
V +0.5 V +0.7
V +0.3
t
V +0.3
t
V +0.2
V +0.1
t
V +0.4
t
V -0.5 V -0.3 V -0.1 V +0.1
V -0.7
t t t t
V -0.3 V -0.2 V -0.1
V
t
t
t
t
t
t
t
t
DRAIN-GATE SOURCE VOLTAGE
= V (V)
DRAIN-GATE SOURCE VOLTAGE
= V (V)
V
V
GS
GS
DS
DS
FORWARD TRANSFER CHARACTERISTICS
LOW VOLTAGE
EQUIVALENT ON RESISTANCE vs.
DRAIN-GATE SOURCE VOLTAGE
500
100000.00
10000.00
1000.00
100.00
10.00
T
A
= + 25°C
400
V
= V
DS
GS
= + 25°C
T
A
300
200
100
1.00
0.10
0.01
0.001
0
V
t
+0.2
V
t
+0.4
V
t
-0.3
V
t
-0.1
V
t
+0.1
V
t
+0.3
V
V
t
-0.2
V
t
t
-0.4
+0.1 +0.2
-0.2 -0.1
-0.3
0
+0.3 +0.4 +0.5
DRAIN-GATE SOURCE OVERDRIVE VOLTAGE
(V = V ) - V (V)
DRAIN-GATE SOURCE VOLTAGE (V)
GS
DS
t
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
DRAIN OFF LEAKAGE CURRENT I
DS(OFF)
vs. AMBIENT TEMPERATURE
+10
+8
600
THREE REPRESENTATIVE UNITS
500
400
+6
+4
+2
V
OS
V
OS
= V M1 - V M2
t t
V
= V = V - 1.0V
DS t
GS
= V M3 - V M4
t
t
0
-2
-4
300
200
100
0
I
DS(OFF)
-6
-8
-10
-50
-25
0
+25
+50
+75 +100 +125
-50
0
+25
+50
+75
+100 +125
-25
AMBIENT TEMPERATURE - T (°C)
A
AMBIENT TEMPERATURE - T (°C)
A
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
15 of 17
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
HIGH LEVEL OUTPUT CONDUCTANCE
vs. GATE THRESHOLD VOLTAGE
LOW LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
0.44
0.42
0.44
0.42
T = + 25°C
A
V = V
GS DS
V
= V
DS
= 1µA
GS
I
DS
I
= 1mA
DS
0.40
0.38
0.40
0.38
0.36
0.34
0.36
0.34
-50
-25
+100 +125
0
+25
+50
+75
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
AMBIENT TEMPERATURE - T (°C)
A
GATE THRESHOLD VOLTAGE - V (V)
t
HIGH LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
LOW LEVEL OUTPUT CONDUCTANCE
vs. GATE THRESHOLD VOLTAGE
0.36
0.35
0.44
0.42
T
= + 25°C
= V
A
V
GS
= 1µA
DS
DS
V = 2.3V to 2.8V
t
DS
I
I
= 1mA
0.40
0.38
0.34
0.33
0.32
0.31
0.36
0.34
-50
-25
0
+25
+50
+75
+100 +125
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
AMBIENT TEMPERATURE - T (°C)
A
GATE THRESHOLD VOLTAGE - V (V)
t
LOW LEVEL OUTPUT TRANSCONDUCTANCE
vs. AMBIENT TEMPERATURE
120
TRANSCONDUCTANCE vs.
GATE THRESHOLD VOLTAGE
89
T
V
= + 25°C
= V
DS
A
110
GS
= 1µA to 10µA
88
87
I
V = 2.3V to 2.8V
t
DS
I
= 1µA to 10µA
DS
100
90
86
85
80
70
84
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
-50
-25
0
+25
+50
+75 +100 +125
GATE THRESHOLD VOLTAGE - V (V)
t
AMBIENT TEMPERATURE - T (°C)
A
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
16 of 17
SOIC-16 PACKAGE DRAWING
16 Pin Plastic SOIC Package
E
Millimeters
Inches
Dim
A
Min
Max
Min
Max
1.75
0.25
0.45
0.25
10.00
4.05
0.053
0.069
1.35
S (45°)
0.004
0.014
0.007
0.385
0.140
0.010
0.018
0.010
0.394
0.160
0.10
0.35
0.18
9.80
3.50
A
1
b
C
D-16
E
D
1.27 BSC
0.050 BSC
0.224
e
6.30
0.937
8°
0.248
0.037
8°
5.70
0.60
0°
H
0.024
0°
L
A
ø
0.50
0.010
0.020
0.25
S
A
e
1
b
S (45°)
C
H
L
ø
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
17 of 17
相关型号：
©2020 ICPDF网 联系我们和版权申明