SABMBOVP2XX [ALD]
PRECISION DUAL SABTM OVER VOLTAGE PROTECTION PCB;型号: | SABMBOVP2XX |
厂家: | ADVANCED LINEAR DEVICES |
描述: | PRECISION DUAL SABTM OVER VOLTAGE PROTECTION PCB PC |
文件: | 总6页 (文件大小:77K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TM
ADVANCED
LINEAR
®
e
EPAD
D
E
L
B
A
N
E
DEVICES, INC.
SABMBOVP/SABMBOVP2XX
PRECISION DUAL SABTM OVER VOLTAGE PROTECTION PCB
FEATURES & BENEFITS
GENERAL DESCRIPTION
• Extremely low output currents at input voltages below the
threshold voltage
• Precision threshold voltage set point
• Extreme change of output current in response to small
changes in input voltage, i.e. dI/dV = ~3mA/1mV
• High maximum clamp output current of 100 mA or greater
• Over Voltage Protection for any size of supercapacitor stacks
in series or in parallel
ALD's SABMBOVP2XX family of Over Voltage Protection Printed
Circuit Boards (PCB) are innovative circuits designed to provide
precision Over Voltage Protection (OVP) in stacked supercapacitor
voltage balancing and other voltage clamping applications. The
SABMBOVP2XX circuit can be viewed as a precision voltage clamp
circuit that offers a superior zener-diode type of functionality and
performs to superior specification and characteristics in creating a
strong, precision voltage clamp. Typically, the clamp current
changes from a few nA to over 100mA (about 1,000,000 times) at
the clamp voltage within a 100mV transition.
• Ultra-low power for energy harvesting and battery-powered
applications
• Fully automatic OVP - no trimming adjustments, no additional
circuits and no software
• Broad selection of threshold voltages for wide variety of OVP
applications
• Corrects imbalances in both capacitance value and DC leakage
current
The SABMBOVP2XX PCB is populated with an ALD9100XX
Supercapacitor Auto Balancing (SAB™) MOSFET IC chip that
specifies the circuit threshold or clamping voltage. SAB MOSFETs
®
areALD exclusive EPAD MOSFETs designed to address voltage
balancing of multiple supercapacitor cells connected in series. SAB
MOSFETs and the SABMBOVP2XX boards are designed to be
compact, economical and effective in balancing any size
supercapacitors with little or no additional power dissipation.
MECHANICAL DRAWING
The SABMBOVP is a blank PCB designed to be used with the
entire ALD9100XX family of SAB MOSFETs for system designers
and application developers. The SABMBOVP contains two OVP
circuits, each functioning as a precision voltage clamp with
extremely high current gain characteristics. Inside each of two
SABMBOVP circuits on the PCB, the internal voltages of the circuit
are shifted so that the balancing output current from the SAB
MOSFET is amplified to produce nominally 1mA of balancing
SABMBOVP
J1
V+
U1
J2
VA
(clamp) output current at V equal to the rated SAB MOSFET
threshold voltage.
IN
RP4
RP2
Q2
Q1
The SABMBOVP board’s two circuits function as a pair of push-
pull matched OVP circuits to balance supercapacitors connected
in series. Each OVP circuit can also be used individually with any
electronic circuitry requiring precision over-voltage clamps. The two
OVP circuits offer a very energy efficient solution that can be applied
to other low-loss energy harvesting and long-life battery operated
applications. They can also be connected in cascade mode,
resulting in a single OVP circuit with twice the clamp voltage.
J9
OP2
J3
1600 mil
VB
ORDERING INFORMATION
J8
ON2
Part Number
Description
J6
J7
OP1
Blank Universal PCB ready for one
ALD9100XX Dual SAB MOSFET IC
SABMBOVP
J4
ON1
J5
VC
SABMBOVP2XX
SABMBOVP Board with one installed
ALD9100XXSALI
Example:
SABMBOVP225
V-
SABMBOVP Board with one installed
ALD910025SALI
Note: SABMBOVP2XX is optional with specific
ALD9100XXSALI units installed. XX = 16, 17, 18, 19, 20,
21, 22, 23, 24, 25, 26, 27, 28, 29, 30.
600 mil
* Magnified, not to scale
See page 6 for full listing of part numbers.
©2021 Advanced Linear Devices, Inc., Vers. 1.1
www.aldinc.com
1 of 6
PRECISION OVP VOLTAGE CLAMPING EXAMPLE
SABMBOVP2XX is higher at the threshold voltage due to an active
current amplifier on board, it is still far below any other means of
correcting for capacitance imbalances. At input voltages of about
0.1V below the threshold voltage, the average additional power
dissipation due to use of SABMBOVP2XX boards is zero, which
makes this method of supercapacitor balancing very energy efficient.
It is especially suited for low loss energy harvesting and long life
battery operated applications.
The SABMBOVP PCB is typically populated with one ALD SAB™
MOSFET IC chip selected to establish the threshold or clamping
voltage of the circuit. The ALD910025 chip, for example, provides
a threshold voltage of 2.50V, which allows the OVP circuit to behave
similar to a pair of super precision zener diodes stacked in series,
each clamping the output at 2.5V. The following scenario illustrates
the relative magnitude of input voltage vs. output current change:
The SABMBOVP2XX circuit features a sharp and high gain current
amplifier, which produces greater than 1,000,000 times output
current increase with small increments of less than 100 mV input
voltage change.
The SABMBOVP PCB balances a pair of series-connected
supercapacitor cells by featuring two near identical over-voltage
clamp circuits, one for parallel connection to each cell. Each board
has two output channels with each having a nominal threshold
setting of 2.5V. At 2.5V input voltage (V ), the nominal output
Supercapacitors, also known as ultracapacitors, when connected
two cells in series can be balanced with a single SABMBOVP2XX
PCB. Supercapacitors, when connected more than two cells in
series, can be balanced with more than one SABMBOVP2XX board
(each with ALD9100XX packages installed).
IN
current (I ) is typically 1.0mA. At V voltages less than 2.5V,
OUT IN
I
decreases rapidly. Hence, at V = ~2.40V I
is equal to
OUT
IN
OUT
0.07µA, and at V = 2.30V, I
drops to 0.01µA. At any V less
IN
IN OUT
than 2.40V, there is essentially no SABMBOVP power dissipation
or any energy draw from the supercapacitors.
The ALD9100XX SAB MOSFET family offers the user a selection
of different threshold voltages for various supercapacitor nominal
operating voltage values and desired leakage balancing
characteristics. Each SAB MOSFET generally requires connecting
its V+ pin to the most positive voltage and its V- and IC pins to the
most negative voltage within the package. Note that each Drain
pin has an internal reverse biased diode to its Source pin, and
each Gate pin has an internal reverse biased diode to V-. All other
pins must have voltages within V+ and V- voltage limits within the
same packaged unit.
At V above the 2.5V threshold level, I
IN
increases sharply and
OUT
steeply, to near vertical. It features high gain dI/dV at small
incremental voltages of V greater than 2.5V. At V of 2.53V, for
IN
IN
instance, the output current (I
) is typically about 100mA,
OUT
1,400,000 times higher than I
at V at 2.4V. This high current
OUT
IN
level (avalanche effect) change tends to limit the V to rise very
IN
slowly and clamps the V to 2.53V. The standard SABMBOVP225
IN
board is designed to limit I
OUT
to approximately 100mA at V
IN
voltages above 2.53V. If the user needs to increase this clamp
current, then an external resistor can be parallel connected across
each of R and R .An external 24Ω 1W resistor connected across
each R /R resistor would increase the max. clamp output current
P1 P3
to 200mA.
Standard ESD protection facilities and handling procedures for static
sensitive devices must also be used while installing theALD9100XX
units. Once installed, the connection configuration will protect the
ALD9100XX units from ESD damage. When connected to a
supercapacitor stack, the ALD9100XX is further protected from
virtually any ESD damage due to the large capacitance of the
supercapacitors, which sinks any ESD charge and thereby reduces
any of the terminal voltages to minimal harmless values.
P1 P3
For a pair of 2.7V rated supercapacitors connected in series, the
SABMBOVP225 functions to limit each supercapacitor to about
2.53V maximum V voltage.Accordingly, when two supercapacitor
IN
cells are connected to the SABMBOVP225 PCB and are not
balanced in either their capacitance values and/or leakage currents,
the cell with the higher voltage tends to be limited in V rise by the
IN
corresponding SABMBOVP225 circuit with up to 100mA bypass
current.A5.00V power supply connected across two supercapacitor
cells in series would limit one cell to a maximum of 2.53V leaving
the other cell at 2.47V (5.00V - 2.53V). If a cell voltage initially
exceeds 2.53V, it rapidly discharges and its cell voltage is clamped
at 2.53V while the other cell voltage reamains at 2.47V.
SABMBOVP2XX PRINTED CIRCUIT BOARDS
Additional features include:
1) ALD9100XX Dual SAB MOSFET with other required
components installed and tested.
2) Optional reverse biased external clamping power diodes
(schottky rectifiers) can be installed by user.
3) Multiple SABMBOVP2XX PCBs can be cascaded to form
a series chain, paralleling a series-connected chain of
supercapacitors.
In this example, supercapacitors should be normally set and
operated at 2.40V for optimal operation without energy loss. If the
desired normal operating voltage is 2.5V instead, then perhaps a
SABMBOVP226 should be selected instead.
4) Compact size of 0.6 in by 1.6 in with mounting holes.
5) Rated for RoHS compatible/industrial temperature range
of -40°C to +85°C.
PLUG-AND-PLAY BALANCING SOLUTION
The SABMBOVP2XX is a simple, out-of-the-box plug-and-play PCB
solution for development, prototyping, demonstration and
evaluation, or production deployment. It is suited for balancing
supercapacitor stacks ranging from two in series to hundreds in
series, and for supercapacitor capacitance values ranging from 0.1F
to 3000F and beyond. Although the current dissipation of the
The SABMBOVP Printed Circuit Board is available as a blank PCB
board, made with RoHS compliant FR4 material, ready for mounting
a single ALD9100XX 8-lead SOIC unit. SABMBOVP2XX PCB are
SABMBOVP with an ALD9100XX chip and other components
factory-installed and tested. ALD9100XX are supplied with a 2-
digit suffix, which denotes the specific ALD9100XX component
SABMBOVP/SABMBOVP2XX
Advanced Linear Devices, Inc.
2 of 6
mounted and tested on the PCB. All that is required of the user is to
mount the PCB and wire the appropriate connections from the
SABMBOVP2XX board to the respective supercapacitor nodes.
However, even with selection for matching, supercapacitor
capacitance value mismatches can still cause significant initial cell
voltage imbalance that necessitates extra voltage margin
allowances. When capacitance values of supercapacitors become
larger, for values ranging from 100F to 1000F, this mismatch
problem become more pronounced and also become much more
difficult to correct. A small MOSFET current meant for correcting
leakage current imbalances may not adequately do the job to
balance supercapacitor cell voltages quickly enough to avoid
prolonged voltage imbalances. Hence if the capacitance values of
supercapacitors cause the initial voltage imbalance, this imbalance
can remain for a long time, even though there is a small balancing
current at work. Hence there is a need to amplify this balancing
current to much higher levels at the critical threshold point, while
still preserving the merits and distinctive performance features and
benefits of SAB MOSFET balancing.
Each SABMBOVP2XX Printed Circuit Board has three key terminal
connections, V+ (VA), V and V- (VC). V+ is directly connected to
B
terminal A, which must be connected to the most positive voltage
for the individual SABMBOVP2XX board. V- is the most negative
voltage present for the same SABMBOVP2XX board. Any number
of SABMBOVP2XX boards can be daisy-chain connected in series.
For example, three SABMBOVP2XX boards, each with an
ALD9100XXSALI installed, can be connected in series to a +15V
power supply, provided care is taken to insure that each
SABMBOVP2XX PCB V- is connected to the V+ of the next
SABMBOVP2XX PCB in series.
For example, an SABMBOVP225 would have typical internal
voltages from V+ to V- of +5.0V. Each individual ALD910025SALI
IC chip on the board has a +15.0V max. rating, but each chip
generally experiences only about +5.0V. Three SABMBOVP2XX
PCB connected in series has a total max. voltage rating of +45V
(+15V x 3), well beyond the +15V power supply.
Next, cell voltage imbalance due to individual cell leakage currents
must be compensated.
The supercapacitor leakage current itself is a variable function of
its many parameters such as aging, initial leakage current at zero
input voltage, the material/construction of the supercapacitor, and
the operating bias voltage. Its leakage is also a function of the
charging voltage, the charging current, operating temperature
range and the rate of change of many of these parameters.
Supercapacitor balancing must accommodate these changing
conditions.
The ALD9100XX is rated for reverse bias diode currents of up to
80mA maximum for each SAB MOSFET on board. Any reverse
bias condition as a result of changing supercapacitor voltages,
especially during fast supercapacitor discharge, could lead to some
internal nodes temporarily reverse biased with surge current in
excess of this limit. The SABMBOVP2XX board has additional
optional TO-277 footprints for mounting external schottky rectifiers
(power diodes) to clamp such surge current transients. The user is
advised to determine the various power and current limits, including
temperature and heat dissipation considerations, when selecting a
suitable component for such purpose. The appropriate level of
derating and margin allowance must also be added to assure long-
term reliability of the PCB.
By using the appropriate ALD SAB MOSFET and the appropriate
SABMBOVP2XX board, users can compensate for all of these
causes of imbalance and automatically balance supercapacitor
imbalances including capacitance value mismatches and leakage
current mismatches.
ENERGY HARVESTING APPLICATIONS
SUPERCAPACITORS
Supercapacitors offer an important benefit for energy harvesting
applications using a low energy source, by buffering and storing
such energy to drive a higher power load.
Supercapacitors are typically rated with a nominal recommended
working voltage established for long life at their maximum rated
operating temperature. Excessive supercapacitor voltages that
exceed the supercapacitor’s rated voltage for a prolonged time
period will result in reduced operating life and eventual rupture
and catastrophic failure. To prevent such an occurrence, a means
of automatically adjusting (charge-balancing) and monitoring the
maximum voltage is required in most applications having two or
more supercapacitors connected in series, due to the different
internal leakage currents that vary from one supercapacitor to
another.
For energy harvesting applications, supercapacitor leakage
currents are a critical factor, as the average energy harvesting
input charge must exceed the average supercapacitor internal
leakage currents in order for any net energy to be harvested and
saved. Often, the input energy is variable, meaning that its input
voltage and current magnitude are not constant and may be
dependent upon a whole set of other parameters such as the
source energy availability, energy sensor conversion efficiency,
changing environmental conditions, etc.
Each supercapacitor cell has a tolerance difference in capacitance,
internal resistance and leakage current. When connected in series.
these differences create imbalance in cell voltages, which must
be balanced so that any individual cell voltage does not exceed
its rated max. voltage. Initially, cell voltage imbalance is caused
by capacitance value differences. Supercapacitors selected from
the same manufacturer make and model batch can be measured
and matched to deliver reasonable initial cell voltages.
SABMOSFETs used for charge balancing, due to their high input
threshold voltages, are completely turned off initially, consuming
zero drain current while the supercapacitor is being charged,
maximizing any energy harvesting gathering efforts. The SAB
MOSFET does not become active until the supercapacitor is
already charged to over 90% of its max. rated voltage. The trickle
charging of supercapacitors with energy harvesting techniques
tends to work well with SAB MOSFETs as charge balancing
devices, as it is less likely to have high transient energy spurts
resulting in excessive voltage or current excursions.
SABMBOVP/SABMBOVP2XX
Advanced Linear Devices, Inc.
3 of 6
If an energy harvesting source only provides a few µA of current,
the power budget does not allow wasting any of this current on
capacitor leakage currents and power dissipation of resistor or
operational amplifier based charge-balancing circuits. It may also
be important to reduce long term leakage currents, as energy
harvesting charging at low levels may take up to many days.
SABMBOVP PCB CONNECTION TO
SUPERCAPACITORS
V+
SABMBOVP
J1
V+
U1
VA
J2
VA
In summary, in order for an energy harvesting application to be
successful, the input energy harvested must exceed all the energy
required, due to the leakages of the supercapacitors and the
charge-balancing circuits, plus any load requirements. With their
unique autobalancing characteristics and near-zero charge loss,
SAB MOSFETs are ideal devices for use in supercapacitor charge-
balancing in energy harvesting applications.
RP4
RP2
Q2
Q1
ꢀ
ꢀ
C1
J9
OP2
J3
VB
VB
BATTERY POWERED APPLICATIONS
J8
ON2
C2
Many battery powered circuits requiring a supercapacitor to boost
power output can benefit from using SAB MOSFETs for
supercapacitor balancing. The additional power burn by using
SAB MOSFETs for supercapacitor stack balancing can actually
be negative, as adding SAB MOSFETs can save supercapacitor
leakage current and associated power dissipation by lowering the
operating bias voltage of the leakier supercapacitor. Applications
that depend on long life battery usage must take into account the
supercapacitor leakage current and balancing circuit power burn
because the currents involved are steady state DC currents that
are continuous throughout the lifetime of the application circuit
and its battery life. The average added power dissipation with the
addition of the SABMBOVP2XX board is zero, provided the
selection of the operating voltages and SAB MOSFETs are
appropriate for the leakage currents of the supercapacitors
specified.
J6
J7
OP1
J4
ON1
J5
VC
VC
V-
V- TO NEXT BOARD V+
V+ TO NEXT BOARD V-
SABMBOVP
J1
V+
U1
VA
J2
VA
RP4
RP2
Q2
Q1
ꢀ
ꢀ
C1
J9
OP2
J3
CONNECTION TO OTHER SABMBXX OR SABMOVP2XX PCBs
VB
VB
The SABMBOVP2XX is compatible with other SABMBXX or
SABMBOVP2XX boards and is designed to be used along with
these other boards connected in series to achieve balancing the
corresponding number of supercapacitors installed in a stack. For
example, six supercapacitors in series can be balanced with three
SABMBOVP2XX PCB connected in series.
J8
ON2
C2
J6
J7
OP1
J4
ON1
J5
VC
VC
For more information on the CHARACTERISTICS OF
SUPERCAPACITOR AUTO BALANCING (SABTM) MOSFETS,
please refer to the following documents:
V-
V- TO NEXT BOARD V+
V+ TO NEXT BOARD V-
*ALD8100XX/ALD9100XX FAMILY of SUPERCAPACITORAUTO
BALANCING (SABTM) MOSFET ARRAYS
SABMBOVP
J1
* Individual datasheet for chosen SAB MOSFET.
V+
U1
VA
CAUTION:
J2
VA
Users must limit the voltage across any ALD9100XX chip to
15.0V max.
RP4
RP2
Q2
Q1
ꢀ
C1
J9
* Magnified, not to scale
SABMBOVP/SABMBOVP2XX
Advanced Linear Devices, Inc.
4 of 6
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CURRENT vs.
INPUT VOLTAGE
OUTPUT CURRENT vs.
INPUT VOLTAGE
100mA
10mA
100mA
10mA
ALD910025SALI
SABMBOVP225
ALD910025SALI
SABMBOVP225
1mA
1mA
100µA
100µA
10µA
1µA
10µA
1µA
100nA
100nA
10nA
1nA
10nA
1nA
5.2
5.4
4.6
4.8
5.0
5.6
2.60
INPUT VOLTAGE -
2.70
2.30
2.40
2.50
2.80
+
INPUT VOLTAGE - V = VA - VC = V (V)
IN
V
= VA - VB = VB - VC = V (V)
IN
GS(th)
OUTPUT CURRENT vs.
INPUT VOLTAGE
OUTPUT CURRENT vs.
INPUT VOLTAGE
14.0
12.0
10.0
140.0
120.0
100.0
ALD910025SALI
SABMBOVP225
ALD910025SALI
SABMBOVP225
8.0
6.0
4.0
2.0
80.0
60.0
40.0
20.0
0
0
5.0
5.2
4.4
4.6
4.8
5.4
5.0
5.1
4.7
4.8
4.9
5.2
+
+
INPUT VOLTAGE - V = VA - VC = V (V)
INPUT VOLTAGE - V = VA - VC = V (V)
IN
IN
SABMBOVP/SABMBOVP2XX
Advanced Linear Devices, Inc.
5 of 6
TYPICAL APPLICATION
V+
J1
V
A
J2
O
N1
J6
R
3
R
X2
X1
D1
Q1
O
C1
8, 2
M1
4
P1
J7
R
R
P2
P1
V
B
J3
O
N2
J8
R
R
X4
6
X3
D2
Q2
C2
7
M2
1, 5
O
P2
R
J9
R
P4
P3
V
C
J4
J5
V-
NOTES
1. U1 (M1, M2): ALD9100XXSALI (SO-8)
2. Q1, Q2: P-CHANNEL MOSFETS (SOT-23)
3. D1, D2: OPTIONAL SCHOTTKY RECTIFIER
5. R , R : OPTIONAL RESISTORS (THROUGH HOLE)
X1 X3
6. R , R : RESISTORS (1W RATED THROUGH HOLE)
P1 P3
7. R , R : OPTIONAL SMD RESISTORS (0603)
P2 P4
FOR REVERSE CURRENT CLAMPING (TO-277)
8. C1, C2: EXTERNAL SUPERCAPACITORS
4. R , R : SMD RESISTORS (0603)
X2 X4
PCB PRODUCT PART NUMBERS
(blank PC Board)
SABMBOVP
SABMBOVP216 (SABMBOVP populated with one ALD910016SALI)*
SABMBOVP217 (SABMBOVP populated with one ALD910017SALI)*
SABMBOVP218 (SABMBOVP populated with one ALD910018SALI)*
SABMBOVP219 (SABMBOVP populated with one ALD910019SALI)*
SABMBOVP220 (SABMBOVP populated with one ALD910020SALI)*
SABMBOVP221 (SABMBOVP populated with one ALD910021SALI)*
SABMBOVP222 (SABMBOVP populated with one ALD910022SALI)*
SABMBOVP223 (SABMBOVP populated with one ALD910023SALI)*
SABMBOVP224 (SABMBOVP populated with one ALD910024SALI)*
SABMBOVP225 (SABMBOVP populated with one ALD910025SALI)*
SABMBOVP226 (SABMBOVP populated with one ALD910026SALI)*
SABMBOVP227 (SABMBOVP populated with one ALD910027SALI)*
SABMBOVP228 (SABMBOVP populated with one ALD910028SALI)*
SABMBOVP229 (SABMBOVP populated with one ALD910029SALI)*
SABMBOVP230 (SABMBOVP populated with one ALD910030SALI)*
* with other required components installed and tested.
SABMBOVP/SABMBOVP2XX
Advanced Linear Devices, Inc.
6 of 6
相关型号:
SABXC164CS-16F40F
Microcontroller, 16-Bit, FLASH, 40MHz, CMOS, PQFP100, 14 X 14 MM, 0.50 MM PITCH, PLASTIC, TQFP-100
INFINEON
SABXC164CS-8F40F
Microcontroller, 16-Bit, FLASH, 40MHz, CMOS, PQFP100, 14 X 14 MM, 0.50 MM PITCH, PLASTIC, TQFP-100
INFINEON
SABXC164CS-8R40F
Microcontroller, 16-Bit, MROM, 40MHz, CMOS, PQFP100, 14 X 14 MM, 0.50 MM PITCH, PLASTIC, TQFP-100
INFINEON
©2020 ICPDF网 联系我们和版权申明