A4919GLPTR-T [ALLEGRO]
Three-Phase MOSFET Driver with Integrated Regulator;
| 型号： | A4919GLPTR-T |
| 厂家： | 
ALLEGRO MICROSYSTEMS |
| 描述： | Three-Phase MOSFET Driver with Integrated Regulator |
| 文件： | 总22页 (文件大小：956K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A4919
Three-Phase MOSFET Driver
with Integrated Regulator
DESCRIPTION
The A4919 is a three-phase controller for use with N-channel
external power MOSFETs.
FEATURES AND BENEFITS
• High-current 3-phase gate drive for N-channel MOSFETs
• 5.5 to 50 V supply voltage range
• Regulated logic supply voltage output option
• Low-current Sleep mode option
• Motor phase short-to-supply and short-to-ground detection
• Cross-conduction protection
Auniquechargepumpregulatorprovidesfull(>10V)gatedrive
at power supply voltages down to 7 V and allows the A4919
to operate with reduced gate drive at power supply voltages
down to 5.5 V. A bootstrap capacitor is used to provide the
abovepowersupplyvoltagerequiredforN-channelMOSFETs.
• Undervoltage, overtemperature monitors
One logic-level input is provided for each of the six power
MOSFETs in the 3-phase bridge, allowing motors to be driven
withanycommutationschemedefinedbyanexternalcontroller.
The power MOSFETs are protected from cross-conduction by
integrated crossover control.
APPLICATIONS
• Lawn and garden equipment
• Battery-operated power tools
• Industrial grinders
• Continuous positive airway pressure (CPAP) machines
• Vacuum cleaners
Motor phase short-to-supply and short-to-ground detection
is provided by independent drain-source voltage monitors on
each MOSFET. Short faults, supply undervoltage, and chip
overtemperature conditions are indicated by a single open-
drain fault output.
PACKAGE:
28-pin TSSOP
with exposed thermal pad
(suffix LP)
Productvariantsincorporatingalowdropout(LDO)regulatorto
source either 5.0 V or 3.3 V to external circuitry are available.
TheA4919 is supplied in a 28-pin TSSOPpower package with
exposed thermal pad (package type LP) and a 28-terminal
5 mm × 5 mm × 0.90 mm QFN package with exposed thermal
pad. Both packages are lead (Pb) free, with 100% matte-tin
leadframe plating (suffix T).
28-terminal
5 mm × 5 mm QFN
with exposed thermal pad
(suffix ET)
Not to scale
Typical Application Diagram
V+
VDD
3-Phase
BLDC
A4919
Motor
Micro-
controller
A4919-DS, Rev. 5
MCO-0000329
January 25, 2019
Three-Phase MOSFET Driver
with Integrated Regulator
A4919
SELECTION GUIDE
Part Number
Sleep Mode
Regulator
Packing
Package
A4919GLPTR-T
Yes
–
–
9.7 mm × 4.4 mm, 1.2 mm nominal height
28-pin TSSOP with exposed thermal pad
A4919GLPTR-3-T
A4919GLPTR-5-T
A4919GETTR-T
3.3 V
5 V
–
4000 pieces per 13-in. reel
1500 pieces per 7-in. reel
–
Yes
–
5 mm × 5 mm, 0.9 mm nominal height
28-terminal QFN with exposed thermal pad
A4919GETTR-3-T
A4919GETTR-5-T
3.3 V
5 V
–
ABSOLUTE MAXIMUM RATINGS with respect to GND
Characteristic
Symbol
Notes
Rating
Unit
Load Supply Voltage
VBB
–0.3 to 50
V
VDDM if no internal LDO regulator, V3 or V5 if LDO regulator
present
Logic Monitor or Supply
V
DDM, V3, V5
–0.3 to 7
V
Terminal VREG
–0.3 to 16
–0.3 to 16
V
V
Terminals CP1, CP2
Logic Inputs AHI, ALO, BHI, BLO, CHI,
CLO
–0.3 to 6.5
V
Terminal VBRG
–5 to 55
–4 to 6.5
V
V
V
V
V
V
V
V
Terminal LSS
Terminals SA, SB, SC
Terminals GHA, GHB, GHC
Terminals GLA, GLB, GLC
Terminals CA, CB, CC
Terminal FAULT
–5 to 55
Sx to Sx+15
–5 to 16
–0.3 to Sx + 15
–0.3 to 6.5
–0.3 to 6.5
Terminal VDSTH
Ambient Operating Temperature
Range
TA
Limited by power dissipation
–40 to 105
165
°C
°C
Maximum Continuous Junction
Temperature
TJ(max)
Overtemperature event not exceeding 10 seconds, lifetime
duration not exceeding 10 hours, determined by design
characterisation.
Transient Junction Temperature
Storage Temperature Range
TtJ
175
°C
°C
Tstg
–55 to 150
THERMAL CHARACTERISTICS: May require derating at maximum conditions; see application information
Characteristic
Symbol
Test Conditions*
LP package, on 4-layer PCB based on JEDEC standard
LP package, on 2-layer PCB with 3.8 in2 copper each side
ET package, on 4-layer PCB based on JEDEC standard
LP package
Value
28
32
32
2
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
Package Thermal Resistance
(Junction to Ambient)
RθJA
Package Thermal Resistance
(Junction to Pad)
RθJP
ET package
2
*Additional thermal information available on the Allegro website.
2
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Three-Phase MOSFET Driver
with Integrated Regulator
A4919
Table of Contents
Specifications
2
2
2
4
6
7
Absolute Maximum Ratings
Thermal Characteristics
Pinout Diagram and Terminal Lists
Functional Block Diagram
Electrical Characteristics
Functional Description
Input and Output Terminal Functions
Power Supplies
CP1, CP2, VREG
Sleep Mode
10
10
11
11
11
11
11
11
12
12
13
13
13
15
Gate Drives
High-Side Gate Drives (GHA, GHB, GHC)
Bootstrap Charge Management
Low-side Gate Drive (GLA, GLB, GLC)
Drain Source Voltage Monitor
Logic Control Inputs
Diagnostics
Fault States
Low Dropout (LDO) Regulator
Applications Information
16
Power Bridge Management Using PWM Control 16
Bootstrap Capacitor Selection
Bootstrap Charging
VREG Capacitor Selection
LDO Regulator Capacitor Selection
Supply Decoupling
Input/Output Structures
Layout Recommendations
Package Outline Drawings
16
17
17
17
17
18
19
20
3
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Three-Phase MOSFET Driver
with Integrated Regulator
A4919
PINOUT DIAGRAMS AND TERMINAL LIST TABLES
LP Pinout Diagrams
28
27
26
25
24
23
22
21
20
19
18
17
16
15
28
27
26
25
24
23
22
21
20
19
18
17
16
15
28
27
26
25
24
23
22
21
20
19
18
17
16
15
LSS
GLC
GHC
SC
CLO
CHI
LSS
GLC
GHC
SC
CLO
CHI
LSS
GLC
GHC
SC
CLO
CHI
1
2
1
2
1
2
BLO
BHI
BLO
BHI
BLO
3
3
3
BHI
4
4
4
CC
ALO
AHI
CC
ALO
AHI
CC
ALO
5
5
5
GLB
GHB
SB
GLB
GHB
SB
GLB
GHB
SB
AHI
6
6
6
PAD
PAD
PAD
FAULT
VDSTH
V3
FAULT
VDSTH
V5
FAULT
VDSTH
VDDM
GND
VBRG
VBB
7
7
7
8
8
8
CB
CB
CB
9
9
9
GLA
GHA
SA
GND
VBRG
VBB
CP1
CP2
GLA
GHA
SA
GND
VBRG
VBB
CP1
CP2
GLA
GHA
SA
10
11
12
13
14
10
11
12
13
14
10
11
12
13
14
CA
CA
CA
CP1
VREG
VREG
VREG
CP2
A4919GLPx-3 variant
A4919GLPx-5 variant
A4919GLPx (No LDO) variant
Terminal List Table
Name
LSS
GLC
GHC
SC
Number
Function
Name
Number
16
Function
Pump Capacitor
CP1
VBB
1
2
Low-Side Source
17
Main Power Supply
High-Side Bridge Voltage Sense
Ground
Low-Side Gate Drive Phase C
High-Side Gate Drive Phase C
Motor Connection Phase C
Bootstrap Capacitor Phase C
Low-Side Gate Drive Phase B
High-Side Gate Drive Phase B
Motor Connection Phase B
Bootstrap Capacitor Phase B
Low-Side Gate Drive Phase A
High-Side Gate Drive Phase A
Motor Connection Phase A
Bootstrap Capacitor Phase A
Gate Drive Supply Output
VBRG
GND
18
3
19
4
V3
V5
VDDM
Voltage Supply (Output) – A4919GLPx-3
Voltage Supply (Output) – A4919GLPx-5
Monitor Input – A4919GLPx (No LDO)
CC
5
20
GLB
GHB
SB
6
7
VDSTH
FAULT
AHI
21
22
23
24
25
26
27
28
–
VDS Monitor Threshold Voltage
Programmable Diagnostic Output
Phase A High-Side Control Input
Phase A Low-Side Control Input
Phase B High-Side Control Input
Phase B Low-Side Control Input
Phase C High-Side Control Input
Phase C Low-Side Control Input
Exposed Thermal Pad On Underside
8
CB
9
GLA
GHA
SA
10
11
12
13
14
ALO
BHI
BLO
CHI
CA
VREG
CLO
Pad
CP2
15
Pump Capacitor
4
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Three-Phase MOSFET Driver
with Integrated Regulator
A4919
ET Pinout Diagrams
VBRG
GND
V3
GLA
CB
VBRG
GND
V5
GLA
CB
VBRG
GND
GLA
CB
1
2
3
4
5
6
7
1
2
3
1
2
3
4
5
6
7
21
20
19
18
17
16
15
21
20
19
18
17
16
15
21
20
19
18
17
16
15
SB
SB
VDDM
VDSTH
FAULT
AHI
SB
PAD
PAD
4
PAD
VDSTH
FAULT
AHI
GHB
GLB
CC
VDSTH
FAULT
AHI
GHB
GLB
CC
GHB
GLB
CC
5
6
7
ALO
SC
ALO
SC
ALO
SC
A4919GETx-3 variant
A4919GETx-5 variant
A4919GETx (No LDO) variant
Terminal List Table
Name
VBRG
GND
Number
Function
Name
SC
Number
Function
1
2
High-Side Bridge Voltage Sense
Ground
15
Motor Connection Phase C
CC
16
17
18
19
20
21
22
23
24
25
26
27
28
–
Bootstrap Capacitor Phase C
Low-Side Gate Drive Phase B
High-Side Gate Drive Phase B
Motor Connection Phase B
Bootstrap Capacitor Phase B
Low-Side Gate Drive Phase A
High-Side Gate Drive Phase A
Motor Connection Phase A
Bootstrap Capacitor Phase A
Gate Drive Supply Output
Pump Capacitor
V3
V5
VDDM
Voltage Supply (Output) – A4919GETx-3
Voltage Supply (Output) – A4919GETx-5
Monitor Input – A4919GETx (No LDO)
GLB
GHB
SB
3
VDSTH
FAULT
AHI
4
5
VDS Monitor Threshold Voltage
Programmable Diagnostic Output
Phase A High-Side Control Input
Phase A Low-Side Control Input
Phase B High-Side Control Input
Phase B Low-Side Control Input
Phase C High-Side Control Input
Phase C Low-Side Control Input
Low-Side Source
CB
GLA
GHA
SA
6
ALO
BHI
7
8
CA
BLO
CHI
9
VREG
CP2
CP1
VBB
Pad
10
11
12
13
14
CLO
LSS
Pump Capacitor
Main Power Supply
GLC
GHC
Low-Side Gate Drive Phase C
High-Side Gate Drive Phase C
Exposed Thermal Pad On Underside
5
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Three-Phase MOSFET Driver
with Integrated Regulator
A4919
Power Supply +
V3 (A4919x-3)
V5 (A4919x-5)
VDDM (A4919x)
CP
A
VBB
CP1 CP2
VREG
VBAT
Charge
Pump
LDO
Regulator
Regulator
CREG
(A4919x-3)
(A4919x-5)
VBRG
Phase A
Logic Supply
CA
Regulator
CBOOTA
One of three phases shown
GHA
AHI
ALO
BHI
High Side
Drive
RGATE
VDS
Control
Logic
Monitor
SA
VDS
Monitor
BLO
CHI
VREG
GLA
Low Side
Drive
Phase C
Phase B
RGATE
CLO
LSS
FAULT
Diagnostics
and
Protection
VDSTH
GND
A
External pin acts as a monitor input (VDDM) on
variants without LDO regulator, and a supply voltage
output on variants with LDO regulator (designated V3
or V5 for 3.3 V and 5.0 V variants respectively)
Functional Block Diagram
6
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Three-Phase MOSFET Driver
with Integrated Regulator
A4919
ELECTRICAL CHARACTERISTICS [1]: Valid at TJ = 25°C, VBB = 7 to 50 V, unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
SUPPLY AND REFERENCE
V
BB Functional Operating Range [2]
VBB
Correct function, parameters not guaranteed
Operational mode, outputs low, VBB = 12 V
5.5
–
–
50
14
V
IBBQ
10
mA
VBB Quiescent Current [3]
Sleep mode, VBB = 12 V
(A4919x, No LDO, variant)
IBBS
–
–
15
µA
VBB > 9 V, IREG = 0 to 15 mA
12.5
12
13
13
13.75
13.75
V
V
7.5 V < VBB ≤ 9 V, IREG = 0 to 10 mA
VREG Output Voltage
VREG
2×VBB
– 3.0
6 V < VBB ≤ 7.5 V, IREG = 0 to 9 mA
–
–
V
5.5 V < VBB ≤ 6 V, IREG < 8 mA
8.5
0.4
1.5
9.5
0.7
2.2
–
V
V
V
ID = 10 mA
1.0
3.1
Bootstrap Diode Forward Voltage
Bootstrap Diode Resistance
VfBOOT
I
D = 100 mA
rD(100mA) = (VfBOOT(150mA) – VfBOOT(50mA)) /
100 (mA)
rD
6
13
28
Ω
Bootstrap Diode Current Limit
GATE OUTPUT DRIVE
Turn-On Time
IDBOOT
250
500
750
mA
tr
tf
CLOAD = 1 nF, 20% to 80%
CLOAD = 1 nF, 80% to 20%
TJ = 25°C, IGHx = –150 mA
TJ = 105°C, IGHx = –150 mA
TJ = 25°C, IGLx = 150 mA
TJ = 105°C, IGLx = 150 mA
Bootstrap capacitor fully charged
–
35
20
8
–
ns
ns
Ω
Turn-Off Time
–
–
5
13
Pull-Up On Resistance
RDS(on)UP
–
13
2.4
3
–
Ω
1.5
4.6
Ω
Pull-Down On Resistance
RDS(on)DN
–
–
Ω
GHx Output Voltage – High
GHx Output Voltage – Low
VGHH
VGHL
VGLH
VGLL
VCx – 0.2
–
–
V
–
–
VSX + 0.3
V
GLx Output Voltage – High
VREG – 0.2
–
–
V
GLx Output Voltage – Low
–
–
–
VLSS + 0.3
V
GHx Passive Pull-Down Resistance
GLx Passive Pull-Down Resistance
Turn-Off Propagation Delay [4]
Turn-On Propagation Delay [4]
RGHPD
RGLPD
tP(off)
VGHx – VSx < 0.3 V
400
400
90
90
–
kΩ
kΩ
ns
ns
VGLx – VLSS < 0.3 V
–
–
Input change to unloaded gate output change
Input change to unloaded gate output change
60
60
180
180
tP(on)
Propagation Delay Matching – Phase
to Phase
∆tPP
∆tOO
Same phase change
Single phase
–
–
10
30
–
–
ns
ns
Propagation Delay Matching – On
to Off
Continued on the next page…
7
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Three-Phase MOSFET Driver
with Integrated Regulator
A4919
ELECTRICAL CHARACTERISTICS [1] (continued): Valid at TJ = 25°C, VBB = 7 to 50 V, unless otherwise specified
Characteristic
LOGIC INPUTS AND OUTPUTS
Input Low Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VIL
VIH
–
2.0
100
–
–
–
0.8
–
V
V
Input High Voltage
Input Hysteresis
VIhys
RPD
tPIN
300
50
35
–
–
mV
kΩ
ns
mV
V
Input Pull-Down Resistor (xHI, xLO)
Input Pulse Filter Time (xHI, xLO)
VDS Disable Voltage
–
–
–
VDSD
VFLTD
VOL
IO
–
100
0.5
0.4
1
Fault Disable Voltage
–
–
Output Low Voltage (FAULT)
Output Leakage (FAULT) [5]
PROTECTION
IOL = 1 mA, no fault indicated
0 V < VO < 5.5 V, fault indicated
–
0.2
–
V
–1
µA
VREGON VREG rising
VREGOFF VREG falling
VBOOTUV VBOOT falling, VCx – VSx
VBOOTHys
7.5
6.75
62
8
7.25
–
8.5
7.75
75
V
VREG Undervoltage Lockout
V
Bootstrap Undervoltage Threshold
Bootstrap Undervoltage Hysteresis
%VREG
%VREG
–
9
–
VDDM / V3 / V5 Undervoltage
Threshold [6]
VDDUV
Voltage falling
2.45
40
2.7
2.85
160
V
VDDM / V3 / V5 Undervoltage
Hysteresis [6]
VDDUVHys
100
mV
VDS Threshold – Internal
VDS Threshold Range
VDS Threshold Input Leakage
VBRG Input Voltage
VDSTHI
VDSTH
VDSTHL
VBRG
VDSTH > 2.7 V
1.0
0.2
– 3
VBB – 1
–
1.2
–
1.4
2
V
V
0 V < VDSTH < 5.5 V
–
3
µA
V
VBB
–
VBB + 1
250
–
VBRG Input Current
IVBRG
VDSTH = 2 V, VBB = 12 V, 0 V < VBRG < VBB
µA
mV
mV
mV
mV
µs
VDSTH ≥ 1 V
–
±100
±50
±100
±50
2.3
–
Short-to-Ground Threshold Offset
VSTGO
V
DSTH < 1 V
VDSTH ≥ 1 V
DSTH < 1 V
–150
–
+150
–
Short-to-Power Supply Threshold
Offset
VSTPO
V
–150
1.5
170
–
+150
4.5
180
–
VDS Fault Blank Time
tBL
TJF
Overtemperature Warning
Overtemperature Hysteresis
Temperature increasing
Recovery = TJF – TJHyst
°C
°C
TJHyst
15
VARIANT WITHOUT LDO REGULATOR ONLY (A4919x)
Input Low Voltage For Sleep Mode
VILS
tSLT
xHI, xLO
–
–
0.5
V
Sleep Mode Activation Timeout
(xHI, xLO) [3]
From all xHI, xLO < VIL
Any xHI, xLO > VIH, CREG < 1 µF
7.5
10
12.5
ms
Wake-up from Sleep Delay [3]
Gate Drive Disable Threshold
VDDM Pull-Down Resistor
tWK
–
–
–
–
1
–
–
ms
V
VGDD
RVDDM
1.5
60
kΩ
Continued on the next page…
8
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Three-Phase MOSFET Driver
with Integrated Regulator
A4919
ELECTRICAL CHARACTERISTICS [1] (continued): Valid at TJ = 25°C, VBB = 7 to 50 V, unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
5 V LDO REGULATOR VARIANT ONLY (A4919x-5) [7]
IV5 < 70 mA, VBB > 6 V
5 mA < IV5 < 25 mA
4.85
4.9
130
450
80
–
5.0
–
5.25
5.2
260
850
200
–
V
V5 Output Voltage
V5
V
V5 Output Overcurrent Limit
V5 Shutdown Voltage Threshold
V5 Shutdown Voltage Hysteresis
V5 Pilot Current [8]
ILDOOC(V5)
mA
mV
mV
mA
ms
VLDOSD(V5) Voltage falling
VLDOHys(V5)
–
–
ILDOP(V5) LDO regulator shut down
tLDOL(V5) From V5 < VLDOSD(V5)
–
2
V5 Shutdown Lockout Period
–
2
–
3 V LDO REGULATOR VARIANT ONLY (A4919x-3) [7]
IV3 < 70 mA, VBB > 6 V
5 mA < IV3 < 25 mA
3.15
3.2
130
450
80
–
3.3
–
3.53
3.5
260
850
200
–
V
V3 Output Voltage
V3
V
V3 Output Overcurrent Limit
V3 Shutdown Voltage Threshold
V3 Shutdown Voltage Hysteresis
V3 Pilot Current [8]
ILDOOC(V3)
mA
mV
mV
mA
ms
VLDOSD(V3) Voltage falling
VLDOHys(V3)
–
–
ILDOP(V3) LDO regulator shut down
tLDOL(V3) From V3 < VLDOSD(V3)
–
2
V3 Shutdown Lockout Period
–
2
–
[1] Specifications presented apply to all product variants except where variant-specific limitations are explicitly defined.
[2] Function is correct but parameters are not guaranteed below the general limits (7 V).
[3] Sleep mode entered after logic low (less than VIL) simultaneously detected on all xLO and xHI inputs for a period of tSLT . Operating mode resumed
within tWK of logic high (greater than VIL ) being detected on any of the xLO or xHI pins.
[4] See Figure 1 for gate drive output timing.
[5] For input and output current specifications, negative current is defined as coming out of (sourced by) the specified device terminal.
[6] On product variants with LDO regulator (A4919x-3 and A4919x-5), an undervoltage trip sets all gate drive outputs low and an unlatched fault
state on the FAULT pin. On product variants without LDO regulator (A4919x), an undervoltage trip has no effect on device operation but sets an
unlatched fault state on the FAULT pin.
[7] A capacitance of at least 1 µF with an ESR of no more than 250 mΩ should be fitted between the LDO V3 / V5 output and GND to ensure stability.
[8] Pilot current is disabled while the overtemperature warning is active.
xH
xL
tP(off)
tP(on)
tP(off)
tP(on)
GHx
GLx
Figure 1: Gate Drive Timing
9
Allegro MicroSystems, LLC
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Three-Phase MOSFET Driver
with Integrated Regulator
A4919
FUNCTIONAL DESCRIPTION
The A4919 provides six high-current gate drives capable of driv-
ing a wide range of N-channel power MOSFETs. The gate drives
are configured as three high-side drives and three low-side. The
six gate drives are controlled by individual TTL-threshold logic
inputs which may be driven from 3.3 V or 5 V logic outputs.
V3. Unique to A4919x-3 variant (has a 3.3 V LDO regulator).
Sources 3.3 V to power external circuitry but does not power any
on-chip functions. Must be loaded with appropriate capacitance
as detailed in the Electrical Characteristics table.
V5. Unique to A4919x-5 variant (has a 5 V LDO regulator).
Sources 5 V to power external circuitry but does not power any
on-chip functions. Must be loaded with appropriate capacitance
as detailed in the Electrical Characteristics table.
The A4919 provides all necessary circuitry to ensure that the
gate-source turn-on voltages of both high-side and low-side
external MOSFETs are driven above 10 V at supply voltages
down to 7 V. For extreme low-power supply voltage conditions,
correct functional operation is maintained down to 5.5 V but with
a reduced gate drive.
CP1, CP2. Pump capacitor connection for charge pump. Connect
a minimum 220 nF capacitor, typically 470 nF, between CP1 and
CP2.
The control inputs to the A4919 provide a simple solution for
many motor drive applications controlled by an external micro-
controller or DSP. Phase commutation and PWM control must be
managed by the external system controller.
VREG. Regulated voltage, nominally 13 V, used to supply the
low-side gate drivers and to charge the bootstrap capacitors. A
sufficiently large storage capacitor must be connected to this
terminal to provide the transient charging current.
Specific device functions are described more fully in the follow-
ing sections.
GND. Analog reference, digital, and power ground. Connect to
supply ground (see Layout Recommendations section).
CA, CB, CC. High-side connections for the bootstrap capacitors
and positive supply for high-side gate drivers.
Input and Output Terminal Functions
VBB. Power supply for all device functions including internal
logic and charge pump. Also used to power the LDO regulator
where present.
GHA, GHB, GHC. High-side, gate-drive outputs for external
N-channel MOSFETs.
SA, SB, SC. Motor phase connections. Used to sense the voltages
switched across the load. Also connected to the negative side of
the bootstrap capacitors and constitute the negative supply con-
nections for the floating high-side drivers.
System power should be connected to VBB through a reverse
voltage protection circuit. The VBB pin should be decoupled to
ground with ceramic capacitors mounted physically close to the
device pins.
GLA, GLB, GLC. Low-side gate-drive outputs for external
N-channel MOSFETs.
VDDM. Unique to parts without an LDO regulator. It does not
provide power to support external circuitry and must be con-
nected to the system logic supply voltage or similar.
LSS. Low-side return path for discharge of the capacitance on the
MOSFET gates, connected to the common sources of the low-
side external MOSFETs through a low-impedance PCB trace.
If the voltage applied on VDDM drops below the VDDUV under-
voltage threshold (2.7 V typ), an unlatched fault condition is
set on the FAULT pin. If it rises above VDDUV +VDDUVHys the
fault condition is cleared. Additionally, if the voltage on VDDM
drops below the VGDD gate drive disable threshold (1.5 V typ),
the charge pump is turned off and all gate drive outputs are
disabled. If it rises above VGDD, the charge pump restarts and all
gate drives are enabled. A pull-down resistance (60 kΩ typical) is
connected from VDDM to ground within the device.
VBRG. Sense input to the top of the external MOSFET bridge.
Allows accurate measurement of the voltage at the drains of the
high side MOSFETs.
AHI, BHI, CHI. Input to control the high-side gate drives. A logic
high on the pin commands the relevant high-side gate drive to be
activated.
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Three-Phase MOSFET Driver
with Integrated Regulator
A4919
ALO, BLO, CLO. Input to control the low-side gate drives. A
logic high on the pin commands the relevant low-side gate drive
to be activated.
with the Input Logic Low Voltage For Sleep (VILS) are detected
simultaneously on all xLO and xHI inputs for a period equal to
the Sleep Mode Activation Timeout (tSLT). In Sleep mode, all
outputs are switched to a high-impedance state.
FAULT. Open-drain active-high fault output. If a fault is present,
the open-drain pull-down is off and the FAULT output may be
pulled high by an external pull-up resistor connected to any volt-
age up to a maximum of 5.5 V.
Operating mode is activated within a period equal to the Wake-
up from Sleep Delay (tWK) from when a logic high is detected
on any of the xLO or xHI pins. In operating mode, logic low
control states applied on the xHI, xLO inputs need only comply
with the Input Low Voltage (VIL) and not the lower Input Logic
Low Voltage For Sleep (VILS). It is recommended that all xLO
inputs are simultaneously driven to logic high (GLx turned on)
when waking from Sleep mode, in order to recharge the bootstrap
capacitors and enable subsequent high-side turn on.
VDSTH. Drain source fault threshold programming pin. The
VDS fault threshold may be set by applying an externally gener-
ated analog voltage. VDS fault reporting is disabled if VDSTH
is driven to less than VDSD (for example, shorted to ground).
The VDS fault threshold is set to an internally hardwired value,
VDSTHI, if VDSTH is driven to a voltage above its specified
analog input range (for example, pulled-up to the system logic
supply voltage).
Sleep mode is not available on A4919x-3 and A4919x-5 (LDO
regulator) variants. If all logic inputs are taken low, power
consumption remains unchanged and all functions remain opera-
tional.
Power Supplies
A single supply voltage applied to the VBB pin powers all device
functions including on-chip logic, analog circuitry, output drivers
and the LDO regulator (where present). The supply should be
connected to VBB through a reverse voltage protection circuit
and decoupled by way of a ceramic capacitor mounted close
to the VBB and GND terminals. All variants of the A4919 will
operate within specified performance limits with VBB between
7 and 50 V, and will function correctly with VBB as low as 5.5 V.
Gate Drives
The A4919 is designed to drive external, low on-resistance,
power N-channel MOSFETs. It will supply the large transient
currents necessary to quickly charge and discharge the exter-
nal MOSFET gate capacitances in order to reduce dissipation
in the external MOSFET during switching. Charge current for
the low-side drives is provided directly by the capacitor on
the VREG terminal. Charge current for the high-side drives is
delivered via the bootstrap capacitors connected, one per phase,
across the Cx–Sx terminal pairs. Charge and discharge rate can
be controlled by incorporating an external resistor in series with
each MOSFET gate drive (GHx, GLx).
CP1, CP2, VREG
The gate drivers are powered by an internal regulator which
limits the supply to the drivers and therefore the maximum gate
voltage. For VBB supply greater than approximately 16 V, the
regulator is a simple buck regulator. Below 16 V, the regulated
supply is maintained by a charge pump boost converter which
requires a pump capacitor, typically 470 nF, connected between
the CP1 and CP2 terminals. The regulated voltage, nominally
13 V, is available on the VREG terminal. A sufficiently large
storage capacitor (see the Applications Information section) must
be connected to this terminal to provide the transient charging
current to the low-side drivers and the bootstrap capacitors.
High-Side Gate Drives (GHA, GHB, GHC)
These are the high-side gate drive outputs for external N-channel
MOSFETs. An external resistor between the GHx gate drive
output and the MOSFET gate terminal (mounted as close to the
latter as possible) may be used to control the slew rate at the gate,
thereby controlling the di/dt and dv/dt at the Sx terminals. Setting
GHx high turns-on the upper half of the driver, sourcing current
to the gate of the high-side MOSFET in the external motor-driv-
ing bridge, turning it on. Setting GHx low turns-on the lower half
of the driver, sinking current from the external MOSFET gate
Sleep Mode
A low-power Sleep mode is available on the A4919x (no LDO
regulator) variant. It is activated after logic low states compatible circuit to the respective Sx terminal, turning it off.
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Three-Phase MOSFET Driver
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A4919
Bootstrap Charge Management
Bootstrap capacitors are charged to approximately VREG when
the associated Sx terminal is driven low. When the Sx terminal
subsequently goes high, the capacitor provides the necessary volt-
age for high-side N-channel power MOSFET turn-on. At system
startup, it is necessary to turn on each low-side drive (GLx) prior
to attempting to turn on the complementary high-side (GHx), in
order to charge the bootstrap capacitors.
5.5 V
Internal[1]
(Threshold set to internal value, VDSTHI
with accuracy specified in Electrical
Characteristics table)
,
Low-side Gate Drive (GLA, GLB, GLC)
The low-side, gate-drive outputs on GLA, GLB, and GLC are
referenced to the LSS terminal. These outputs are designed to
drive external N-channel power MOSFETs. An external resistor
between the GLx gate drive output and the MOSFET gate ter-
minal (mounted as close to the latter as possible) may be used to
control the slew rate at the gate, thereby providing some control
of the di/dt and dv/dt at the Sx terminals. Setting GLx high turns-
on the upper half of the driver, sourcing current to the gate of the
low-side MOSFET in the external motor-driving bridge, turning
it on. Setting GLx low turns-on the lower half of the driver, sink-
ing current from the external MOSFET gate circuit to the to the
LSS terminal, turning it off.
2.7 V
Indeterminate[2][3]
2.3 V
2.0 V
External
(Threshold set to voltage
approximately equal to that applied on
VDSTH pin. Accuracy not specified.)
Drain Source Voltage Monitor
VDSTH (max)
External
The VDS fault threshold is set by applying a control voltage on
the VDSTH pin, as detailed in Figure 2. If a voltage between
0.2 and 2.0 V is applied, the threshold follows this level, subject
to the Short to Ground Threshold (VSTGO) and Short to Power
Supply Threshold (VSTPO) offsets detailed in the Electrical Char-
acteristics table.
(Threshold set to voltage applied on
VDSTH pin with accuracy specified in
Electrical Characteristics table)
0.2 V
0.1 V
VDSTH (min)
VDSD
Indeterminate[2]
Disabled
If a voltage between 2.0 and 2.3 V is applied, the threshold
approximates the applied level, but accuracy is not specified.
0 V
If the VDSTH pin is driven below the VDS Disable Voltage
(VDSD), 0.1 V (such as when shorted to ground), VDS fault
reporting is disabled.
[1] VDSTH pin typically tied to system logic supply voltage
(for example, V3 or V5)
[2] Behaviour indeterminate due to threshold detection uncertainty
[3] Threshold range confirmed by design
If the VDSTH pin is taken above 2.7 V (such as when pulled
up to the system logic supply voltage) the threshold is set to the
VDS Threshold Internal voltage (VDSTH), detailed in the Electri-
cal Characteristics table (typically 1.2 V).
Figure 2: VDSTH Pin Voltage versus VDS Monitor
Function
The VDSTH pin presents a high impedance at all voltages across
its permissible input range (per the VDS Threshold Input Leak-
age limits, VDSTHL, detailed in the Electrical Characteristics
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Three-Phase MOSFET Driver
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A4919
table), allowing a wide range of programming circuits to be used
including simple resistive dividers.
Diagnostics
Several diagnostic features are integrated into the A4919 to
indicate fault conditions. In addition to system-wide faults such
as undervoltage and overtemperature, the A4919 integrates
individual monitors for each bootstrap capacitor voltage and each
external MOSFET drain-source voltage.
The VDSTH input has an internal passive first-order filter with a
time constant of approximately 0.01 ms. Additional filter capaci-
tance may be added externally if required.
The presence of a fault condition is indicated on the FAULT pin.
This is an open drain output that should be pulled to any voltage,
up to 5.5 V, by an external resistor, typically 10 to 47 kΩ. The
definition of the individual fault states and the effects on the gate
drive outputs (GHx and GLx) are shown in Table 2 and described
below.
Logic Control Inputs
A set of discrete digital inputs (xHI and xLO) provides direct
control of the six gate drive outputs (GHx and GLx). TTL input
threshold levels ensure these can be driven from 3.3 V or 5 V
logic systems. Setting a logic input high causes the corresponding
gate drive output to go high, thereby commanding the associated
external MOSFET to turn on. Conversely, setting a logic input
low causes the corresponding gate drive to go low, commanding
the MOSFET to turn off.
Fault States
It is recommended that any external control circuitry remaining
active in the event of a fault state being flagged be configured
to take appropriate action to prevent damage to the A4919 and
associated motor drive components.
Internal lock-out logic, detailed in Table 1, ensures that the
high-side output drive and low-side output drive cannot be active
simultaneously.
Overtemperature. If the junction temperature exceeds the
overtemperature warning threshold (TJF), the A4919 enters the
overtemperature warning state and FAULT goes high. When
the junction temperature drops below the recovery level ( TJF
– TJFhys), the overtemperature warning state is cleared and the
FAULT output returned to logic low.
Table 1: Phase Control Truth Table
Input
Output
GHx
Phase
Sx
Z
xHI
0
xLO
0
GLx
L
Comment
L
L
Phase disabled
Low-side active
High-side active
Phase disabled
0
1
H
LO
HI
1
0
H
L
L
While an overtemperature warning state is being asserted, no on-
chip circuitry or functions are disabled, with the exception of the
LDO regulator on the A4919x-3 and A4919x-5 variants, which is
shut down immediately and remains off until the overtemperature
warning state is cleared.
1
1
L
Z
HI = high-side MOSFET active
LO = low-side MOSFET active
Z = high impedance, both MOSFETs off
Table 2: Fault Definitions
FAULT Pin
Fault
Fault Description
Outputs Disabled
Latched
State
Low
No fault
No
No
–
High
Overtemperature
No
VDDM undervoltage
All gate drives enabled for VDDM > VGDD. All gate drives
(A4919x variant, without LDO)
low (external MOSFETs off) for VDDM ≤ VGDD
High
No
V3 or V5 undervoltage
(A4919x-3 and A4919x-5 variants, with LDO)
All gate drives low (external MOSFETs off)
High
High
VREG undervoltage
VDS overvoltage
All gate drives low (external MOSFETs off)
No
No
No
High-side drive of the output phase that is generating the
fault condition is set low (external MOSFET off). Other
outputs unaffected.
High
Bootstrap undervoltage
Yes
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Three-Phase MOSFET Driver
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A4919
VREG Undervoltage. The charge pump generates VREG to
provide low-side gate driver and bootstrap charge current. It
is necessary to ensure that this voltage is high enough prior to
enabling any of the gate drive outputs. If the voltage at the VREG
pin drops below the VREG Undervoltage Lockout Threshold
(falling), VREGOFF , the A4919 enters the VREG undervoltage
fault state, FAULT is set high, and all gate drive outputs (GHx
and GLx) are disabled. The VREG undervoltage fault state is
cleared and FAULT goes low when VREG rises above the VREG
Bootstrap Capacitor Undervoltage. Each bootstrap capacitor
is monitored to ensure sufficient high-side gate drive voltage is
available to initiate and maintain external MOSFET turn-on.
High-side gate drive outputs turn on only if the relevant bootstrap
capacitor voltage is higher than the bootstrap turn-on voltage
threshold, VBOOTUV + VBOOTHys . If the bootstrap voltage is
below this threshold when turn-on is commanded (on the xHI
pin), the corresponding gate drive, GHx, is not switched on and
FAULT is set high. The output remains off and FAULT remains
high until either the affected gate drive is commanded to turn
off, or the FAULT pin is pulled low by external means (see the
FAULT Disable description, below).
Undervoltage Lockout Threshold (rising), VREGON
.
During power-up, the VREG undervoltage monitor circuit is
active and the A4919 remains in the VREG undervoltage fault
state until VREG is greater than the rising VREG Undervoltage
Lockout Threshold (VREGON, rising).
After a high-side gate drive has been successfully turned on, the
appropriate bootstrap capacitor voltage must remain above the
Bootstrap Undervoltage Threshold, VBOOTUV. If the bootstrap
capacitor voltage drops below VBOOTUV, the high-side driver in
question is switched off and FAULT goes high. The driver will
remain off and FAULT will remain high until either the affected
high-side gate drive turn-on command is removed from xHI or
the FAULT pin is pulled low by external means (see the FAULT
Disable description below).
VDDM / V3 / V5 Undervoltage. The voltage on the VDDM / V3
/ V5 pin is monitored on all part variants. If it drops below the
VDDM / V3 / V5 undervoltage threshold, VDDUV, the A4919
enters the VDDM/V3/V5 undervoltage state and FAULT is set
high. On part variants with LDO regulator functionality, all
gate drive outputs (GHx, GLx) are disabled. On the part variant
without LDO functionality, all gate drive outputs remain active
unless the applied voltage also drops below the gate drive disable
threshold, VGDD. The VDDM/V3/V5 undervoltage fault state is
cleared and FAULT goes low when the voltage on VDDM / V3 /
If a bootstrap capacitor fault condition is detected, only the driver
in question is disabled. All other gate drives continue to respond
to control inputs on xHI and xLO.
V5 pin rises above VDDUV+VDDUVhys
.
FAULT Disable. If the FAULT pin is held low (below the Fault
Disable Voltage, VFLTD ) by external means, the bootstrap under-
voltage monitor feature is disabled. In this condition, if the boot-
strap capacitor voltage fails to reach VBOOTUV + VBOOTHys for
turn-on, or if it drops below VBOOTUV after turn-on, the driver in
question is not forced into the off state. A fault state is not flagged
because the FAULT pin is held low.
During power-up, the VDDM/V3/V5 undervoltage monitor cir-
cuit is active and all variants of the A4919 remain in the VDDM/
V3/V5 undervoltage fault state until the voltage on the VDDM/
V3/V5 pin is greater than the VDDM/V3/V5 undervoltage thresh-
old plus hysteresis, VDDUV+VDDUVhys
.
VDS Overvoltage. When a gate drive output is commanded to
turn on (GHx or GLx high), the drain-source voltage of the cor-
responding external MOSFET is monitored between VBRG and
Sx, or between Sx and LSS, as appropriate. If the measured volt-
age exceeds the threshold value programmed on the VDSTH pin,
the FAULT output is set high but none of the gate drive outputs is
disabled.
While the FAULT pin is held low (to disable the bootstrap under-
voltage monitor), any other fault conditions that might arise are
undetectable outside the A4919. However, internal fault actions
are unaffected and gate drive outputs are still disabled in response
to other faults in accordance with Table 2.
Low Dropout (LDO) Regulator
Propagation of any fault states to the FAULT output is disabled
for the VDS Fault Blank Time (tBL) commencing at every exter-
nal MOSFET turn-on event to avoid reporting spurious faults
in response to switching transients. If a fault is reported on the
FAULT pin it will be cleared as soon as the measured drain-
source voltage drops below the programmed VDSTH level.
The A4919x-3 and A4919x-5 variants have a linear regulator that
provides a low-voltage DC supply to power external circuitry.
It is derived from VBB and incorporates a number of protection
features.
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Three-Phase MOSFET Driver
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An overcurrent circuit limits the output of the regulator in the
event of an excessively high load demand being made (load cur-
rent > ILDOOC).
At device power-up, full output current is delivered for a period
equal to the Shutdown Lockout Period regardless of output volt-
age to facilitate reliable regulator startup.
If the output voltage falls below the regulator undervoltage
threshold (VDDUV), a fault state is flagged on the FAULT output
to provide an external warning, but device operation remains
otherwise unchanged.
If the device internal temperature rises high enough to generate
an Overtemperature Warning (T > TJF), the regulator is immedi-
ately shut down and the FAULT flag is set. All device functions
other than the regulator remain active. When the Overtemperature
Warning is cleared (T < TJF – TJHyst ), the pilot current is turned
on and the regulator attempts to restart.
If the output voltage falls below the regulator shutdown thresh-
old (VLDOSD, which is lower than the regulator undervoltage
threshold) for a period exceeding the Shutdown Lockout Period
(tLDOL), the regulator is turned off but all other device func-
tions remain active. In this state a small pilot current (ILDOP), is
driven through the regulator output to detect load resistance. If
the resultant voltage rises above the regulator shutdown threshold
plus hysteresis (VLDOSD + VLDOHys), the regulator immediately
attempts to restart.
If an undervoltage shutdown (< VLDOSD) and an Overtemperature
Warning (T > TJF ) occur simultaneously, both must be cleared to
allow the regulator to restart.
Internal device circuitry is not powered from the LDO regula-
tor and remains fully operational regardless of whether the LDO
regulator is running normally or is shut down.
As detailed in the Electrical Characteristics table, a minimum
capacitance must be connected between the LDO regulator output
and ground to ensure stability. Running the device with signifi-
cantly less than the stated minimum capacitance may result in
oscillation and voltage excursions exceeding the specified V3 or
V5 output voltage range. In some applications the use of redun-
dant output capacitors may be advisable to avoid such a condition
in the event of a single-point, capacitor-high-impedance failure.
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Three-Phase MOSFET Driver
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A4919
APPLICATIONS INFORMATION
Power Bridge Management Using PWM
Control
on the bootstrap capacitor, QBOOT, should be much larger than
QGATE, the charge required by the gate:
QBOOT >> QGATE
A factor of 20 is a reasonable value. CBOOT can then be calcu-
lated as:
(1)
(2)
The A4919 provides individual high-side and low-side controls
for each phase through the six digital control inputs. The only
restriction imposed by the A4919 is to prevent both the high-
side and low-side gate drives of the same phase from being
on at the same time, in order to avoid cross-conduction. This
design approach allows almost all 3-phase BLDC bridge control
schemes to be implemented. This includes fast and slow decay,
synchronous rectification and diode rectification, and edge-
aligned and center-aligned PWM.
QBOOT = CBOOT × VBOOT = QGATE × 20, or
CBOOT = (QGATE × 20) / VBOOT
where VBOOT is the voltage across the bootstrap capacitor.
Figure 3A shows an example of the path of the bridge and load
current. In this example, the high-side MOSFETs are switched off
during the current decay time (PWM off-time) and load current
recirculates through the low-side MOSFETs. This is commonly
referred to as high-side chopping or high-side PWM. During
the PWM off-time, the complementary MOSFETs are turned
on to short the body diode and provide synchronous rectifica-
tion. Figure 3A only shows one combination of phase states, but
the same principal applies to any of the possible phase states.
The same principal also applies when the low-side MOSFETs
are turned off during the PWM off-time and the load current
recirculates through the high-side MOSFETs as in Figure 3B. In
this control scheme, the microcontroller has full control over the
current decay method, load current recirculation paths, braking,
and coasting.
A
B
C
Drive
Recirculate
Phase
xH
xL
GHx
GLx
A
1
0
H
L
B
1
0
H
L
C
0
1
L
H
Phase
xH
A
0
B
0
C
0
1
L
H
xL
1
1
GHx
GLx
L
H
L
H
(A) High-side PWM with slow decay and synchronous rectification
The A4919 provides exceptional propagation delay matching
from logic input to gate drive output for high performance motor
control applications. These advanced applications usually require
high-resolution PWM control on each phase. This must be
provided by an external controller, which must also provide the
necessary dead time to avoid shoot through in the power bridge.
A
B
C
Bootstrap Capacitor Selection
Drive
Recirculate
Phase
xH
xL
GHx
GLx
A
1
0
H
L
B
1
0
H
L
C
0
1
L
H
Phase
xH
xL
GHx
GLx
A
1
0
H
L
B
1
0
H
L
C
1
0
H
L
CBOOT must be correctly selected to ensure proper operation of
the device. If it is too large, time will be wasted charging the
capacitor, resulting in a limit on the maximum duty cycle and
PWM frequency. If it is too small, there can be a large voltage
drop at the time the charge is transferred from CBOOT to the
MOSFET gate.
(B) Low-side PWM with slow decay and synchronous rectification
Figure 3: Power Bridge Control
To keep the voltage drop due to charge sharing small, the charge
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Three-Phase MOSFET Driver
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A4919
The voltage drop, ∆V, across the bootstrap capacitor as the MOS- which can be several hundred milliamperes, cannot be provided
FET is being turned on can be approximated by:
directly by the limited output of the VREG regulator but instead
must be supplied by an external capacitor connected to VREG.
∆V = QGATE / CBOOT
(3)
so for a factor of 20, ∆V will be 5% of VBOOT
.
The turn-on current for the high-side MOSFET is similar in
value, but is mainly supplied by the bootstrap capacitor. How-
ever, the bootstrap capacitor must then be recharged from the
VREG regulator output.
The maximum voltage across the bootstrap capacitor under
normal operating conditions is VREG (max). However, in some
circumstances the voltage may transiently reach 18 V, which is
the clamp voltage of the Zener diode between the Cx terminal
and the Sx terminal. In most applications, with a good ceramic
capacitor the working voltage can be limited to 16 V.
Unfortunately, the bootstrap recharge can occur a very short
time after the low-side turn-on occurs. This means that the value
of the capacitor connected between VREG and GND should be
high enough to minimize the transient voltage drop on VREG for
the combination of a low-side MOSFET turn-on and a bootstrap
capacitor recharge. For block commutation motor control, where
the number of MOSFETs switching at any one time is limited,
a value of 20 × CBOOT is a reasonable value. For sinusoidal or
vector motor control (SVM), where several MOSFETs may be
switching at the same time, a value of 40 × CBOOT is recom-
mended. The maximum working voltage will never exceed VREG
so the capacitor can be rated as low as the terminal. This capaci-
tor should be placed as close as possible to the VREG terminal.
Bootstrap Charging
It is good practice to ensure the high-side bootstrap capacitor is
completely charged before a high-side PWM cycle is requested.
The time required to charge the capacitor, tCHARGE, in µs, is
approximated by:
tCHARGE = (CBOOT × ∆V) / 500
(4)
Where CBOOT is the value of the bootstrap capacitor in nF and
∆V is the required voltage of the bootstrap capacitor.
At power-up and when the drivers have been disabled for a long
time, the bootstrap capacitor can become completely discharged.
In this case, ∆V can be considered to be the full high-side drive
voltage, 12 V. Otherwise, ∆V is the amount of voltage dropped
during the charge transfer, which should be 400 mV or less. The
capacitor is charged whenever the Sx terminal is pulled low and
current flows from VREG through the internal bootstrap diode
LDO Regulator Capacitor Selection
A capacitor of at least 1 µF, ESR < 250 mΩ should be connected
between the V3 / V5 pin and GND on A4919x-3 and A4919x-5
variants to ensure LDO stability.
circuit to CBOOT
.
VREG Capacitor Selection
Supply Decoupling
The internal reference, VREG, supplies current for the low-side
gate-drive circuits and the charging current for the bootstrap
capacitors. When a low-side MOSFET is turned on, the gate-
drive circuit will provide the high, transient current to the gate
that is necessary to turn the MOSFET on quickly. This current,
The switching action associated with device operation will result
in current spikes on VBB at each transition. Consequently, VBB
should be decoupled to GND with a ceramic capacitor, typically
220 nF, mounted as close to the A4919 pins as possible.
17
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Three-Phase MOSFET Driver
with Integrated Regulator
A4919
Cx
VBRG
VBB
18V
20V
20V
GHx
VREG
VDDM / V3 / V5
14V
CP1
CP2
Sx
7.5V
20V
VREG
20V
60kΩ
8V
18V
18V
20V
18V
20V
14V
6V
18V
GLx
LSS
18V
Figure 4b: Supplies
Figure 4a: Gate Drive Outputs
4.5V(max)
2kΩ
4kΩ
25Ω
xHI
xLO
VDSTH
FAULT
50kΩ
6V
6V
6V
6V
6V
Figure 4c: xHI,xLO Inputs
Figure 4d: VDSTH Input
Figure 4e: FAULT Output
Figure 4: Input / Output Structures
18
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Three-Phase MOSFET Driver
with Integrated Regulator
A4919
LAYOUT RECOMMENDATIONS
Optional reverse
power supply protection
VBB
VREG
VBRG
+ Supply
GHC
GHB
GHA
VDDM/
V3/
SA
SB
SC
V5
Motor
A4919
GLA
GLB
GLC
VDSTH
LSS
GND TAB
RS
Optional components to
limit LSS transients
Supply
Power Ground
Common
Controller Supply
Figure 5: Supply Routing Suggestions
Careful consideration must be given to PCB layout when design-
ing high frequency, fast-switching, high-current circuits:
located as close to the device pins as possible. All connections
should take the form of short, dedicated traces. If VDSTH is
directly strapped to a logic supply or GND, this should similarly
be by way of a short, dedicated trace.
• The A4919 ground, GND, and the high-current return of the
external MOSFETs should return separately to the negative side
of the motor supply filtering (DC-link) capacitor. This will mini-
mize the effect of bridge switching noise on the A4919.
• Check the peak voltage excursion of the transients on the LSS
terminal with reference to the GND terminal using a close-
grounded (tip and barrel) probe. If the voltage at LSS exceeds the
absolute maximum in the datasheet, add additional clamping and/
or capacitance between the LSS terminal and the GND terminal
as shown.
• The exposed thermal pad should be connected to GND.
• Minimize stray inductance by using short, wide copper PCB
traces at the drain and source terminals of all power MOSFETs.
This includes motor lead connections, the input power bus, and
the common source of the low-side power MOSFETs. This will
minimize voltages induced by fast switching of large load cur-
rents.
• Gate charge drive paths and gate discharge return paths may
carry a large transient current pulse. Therefore the traces from
GHx, GLx, Sx (x = A, B or C) and LSS should be a short as pos-
sible to minimize trace inductance.
• Consider the use of small (100 nF) ceramic decoupling capaci-
tors across the source and drain of the power MOSFETs to limit
fast transient voltage spikes caused by circuit trace inductance.
• Provide an independent connection from LSS to the common
point of the power bridge. It is not recommended to connect LSS
directly to the GND terminal as this may inject noise into sensi-
• Keep the gate discharge return connections Sx and LSS as short tive functions such as the various voltage monitors.
as possible. Any inductance on these traces will cause negative
• A low cost diode can be placed in the connection to VBB to
transitions on the corresponding A4919 terminals, which may
provide reverse power supply protection. In reverse power sup-
exceed the absolute maximum ratings. If this is likely, consider
ply conditions it is possible to use the body diodes of the power
the use of clamping diodes to limit the negative excursion on
MOSFETs to clamp the reverse voltage to approximately 4 V. In
these terminals with respect to GND.
this case the additional diode in the VBB connection will prevent
• The threshold programming network associated with the
VDSTH input, including suitable supply decoupling, should be
damage to the A4919 and the VBRG terminal will survive the
reverse voltage.
19
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Three-Phase MOSFET Driver
with Integrated Regulator
A4919
PACKAGE OUTLINE DRAWINGS
For Reference Only – Not for Tooling Use
(Reference MO-153 AET)
Dimensions in millimeters – NOT TO SCALE
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
9.70 0.10
5.08 NOM
8º
0º
28
0.20
0.09
B
4.40 0.10 6.40 0.20
3 NOM
A
2
1.00 REF
0.60 0.15
1
Branded Face
0.25 BSC
C
28X
1.20 MAX
SEATING PLANE
GAUGE PLANE
0.10
C
SEATING
PLANE
0.30
0.19
0.15
0.00
0.65 BSC
0.65
0.45
28
1.65
3.00
6.10
A Terminal #1 mark area
B Exposed thermal pad (bottom surface)
1
2
C Reference land pattern layout (reference IPC7351 SOP65P640X120-29CM);
All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary
to meet application process requirements and PCB layout tolerances; when
mounting on a multilayer PCB, thermal vias at the exposed thermal pad land
can improve thermal dissipation (reference EIA/JEDEC Standard JESD51-5)
5.00
C
PCB Layout Reference View
Figure 6: Package LP, 28-Pin TSSOP with Exposed Thermal Pad
20
Allegro MicroSystems, LLC
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Three-Phase MOSFET Driver
with Integrated Regulator
A4919
For Reference Only – Not for Tooling Use
(Reference JEDEC MO-220VHHD-1)
NOT TO SCALE
All dimensions nominal unless otherwise stated – Dimensions in millimeters
Exact case and lead configuration at supplier discretion within limits shown
5.00
0.50
0.30
28
28
1.15
1
1
2
A
5.00
3.15
4.80
3.15
4.80
C
D
29X
0.90
0.08
C
C
PCB Layout Reference View
SEATING
PLANE
0.25
0.50
3.15
0.55
A
B
C
Terminal #1 mark area
B
Exposed thermal pad (reference only, terminal #1 identifier appearance at supplier discretion)
3.15
Reference land pattern layout (reference IPC7351 QFN50P500X500X100-29V1M);
All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary to meet
application process requirements and PCB layout tolerances; when mounting on a
multilayer PCB, thermal vias at the exposed thermal pad land can improve thermal
dissipation (reference EIA/JEDEC Standard JESD51-5)
2
1
D
Coplanarity includes exposed thermal pad and terminals
28
Figure 7: Package ET, 28-Terminal QFN with Exposed Thermal Pad
21
Allegro MicroSystems, LLC
955 Perimeter Road
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www.allegromicro.com
Three-Phase MOSFET Driver
with Integrated Regulator
A4919
Revision History
Revision
Description of Revision
Pages
Responsible
Revision Date
–
Initial Release
All
A. Wood
April 14, 2014
Added VGDD spec and new Input Low Voltage for Sleep Mode;
ammended VDDM description
7, 9, 10,
12, 13
1 (was 0.1)
A. Wood
November 11, 2014
2
3
Updated Electrical Characteristics test conditions in table headers
Editorial update
6-8
All
A. Wood
January 4, 2017
October 24, 2017
R. Couture
Updated VDSTHI min/max values; corrected typos in Sleep Mode
section; added ET package option
1, 2, 8,
11, 21
4
5
S. Ehara
January 16, 2018
January 25, 2019
Minor editorial updates
All
R. Couture
Copyright ©2019, Allegro MicroSystems, LLC
Allegro MicroSystems, LLC reserves the right to make, from time to time, such departures from the detail specifications as may be required to
permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that
the information being relied upon is current.
Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of
Allegro’s product can reasonably be expected to cause bodily harm.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no responsibility for its
use; nor for any infringement of patents or other rights of third parties which may result from its use.
Copies of this document are considered uncontrolled documents.
For the latest version of this document, visit our website:
www.allegromicro.com
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