RBV-1506J [ALLEGRO]
Bridge Rectifier Diode, 1 Phase, 15A, 600V V(RRM), Silicon, RBV-60, 4 PIN;
| 型号： | RBV-1506J |
| 厂家： | 
ALLEGRO MICROSYSTEMS |
| 描述： | Bridge Rectifier Diode, 1 Phase, 15A, 600V V(RRM), Silicon, RBV-60, 4 PIN 局域网 二极管 |
| 文件： | 总3页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4-1 Rectifier Diodes
IFSM
(A)
50Hz
IR
(µA)
VR=VRM
max
IR(H)
(µA)
VR=VRM
max
IF (AV)
(A)
Values in parentheses
are for the products
with heatsinks
Package
Axial
VF
(V)
max
Rth(j-l)
Rth(j-c)
(°C/W)
VRM
(V)
Tj
(°C)
Tstg
(°C)
IF
(A)
Ta
(°C)
Mass
(g)
Part Number
(Body Diameter/Lead Diameter)
Single Half Sine Wave
0.8
1.0
Axial(φ4.0/φ0.78)
Axial(φ2.7/φ0.78)
Axial(φ4.0/φ0.98)
Axial(φ4.0/φ0.78)
Axial(φ4.0/φ0.98)
Axial(φ5.2/φ1.2)
Axial(φ6.5/φ1.4)
RM 1C
EM 1C
RO 2C
RM 11C
RM 2C
RM 3C
RM 4C
40
35
-40 to +150
1.2
1.0
1.0
1.5
1.5
1.5
2.5
3.0
5
50
100
50
100
100
100
100
100
150
100
15
0.4
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
0.97
0.92
0.92
0.91
0.95
0.95
20
10
10
10
10
10
17
12
15
12
10
8
0.3
0.61
0.4
1.2
80
1000
1.2
100
100
150
150
50
1.2
50
0.6
2.0
100
50
1.0
1.7(3.0)
1.2
●Bridge
IFSM
(A)
50Hz
IR
(µA)
VR=VRM
max
IR(H)
(µA)
VR=VRM
max
IF (AV)
(A)
Values in parentheses
are for the products
with heatsinks
VF
(V)
max
Rth(j-l)
VRM
(V)
Tj
( C)
Tstg
( C)
IF
(A)
Ta
( C)
Mass
(g)
Package
Part Number
Rth(j-c)
°
°
°
°
(
/W)
C
Single Half Sine Wave
60
4.0
4.0
6.0
4.0
4.0
6.0
6.0
10
RBV-40
RBV-40
RBV-60
RBV-40
RBV-40
RBV-60
RBV-60
RBV-40
RBV-40
RBV-60
RBV-40
RBV-40
RBV-40
RBV-60
RBV-60
RBV-40
RBV-60
RBV-60
RBV-60
RBV-60
RBV-60
RBV-40
RBV-60
RBV-40
RBV-60
RBV-406B*1
RBV-401
40
80
-40 to +150
0.62
2.0
2.0
3.0
2.0
2.0
3.0
3.0
5.0
2.0
3.0
2.0
2.0
2.0
3.0
3.0
5.0
6.5
7.5
7.5
7.5
2
55
100
100
100
100
1000
100
100
100
100
100
100
100
100
200
100
100
200
200
200
200
50
150
5
4.25
4.05
6.45
4.05
4.05
6.45
6.45
4.05
4.05
6.45
4.05
4.05
4.05
6.45
6.45
4.05
6.45
6.45
6.45
6.45
6.45
4.05
6.45
4.05
6.45
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
-40 to +150
1.05
1.00
1.05
0.98
1.0
10
10
10
50
250
10
10
10
10
10
10
10
10
10
10
10
10
10
50
50
10
10
10
50
100
100
100
100
100
100
150(Tj)
100
100
100
100
100
100
100
100
100
100
150(Tj)
100
100
100
100
100
100(Tj)
5.0
3.0
5.0
5.0
3.0
3.0
2.0
5.0
3.0
5.0
5.0
5.0
3.0
3.0
2.0
1.5
1.5
1.5
1.5
1.5
5.0
3.0
5.0
1.5
100
RBV-601
120
80
RBV-402
RBV-402L*2
RBV-602L*3
RBV-602
80
200
400
100
120
80
1.00
1.1
RBV-4102
RBV-404
4.0
6.0
4.0
4.0
4.0
6.0
6.0
10
80
1.10
1.05
1.10
0.92
1.00
1.05
1.05
1.00
1.20
1.10
1.10
1.05
RBV-604
120
80
RBV-406
RBV-406H
RBV-406M
RBV-606
120
120
120
140
120
80
RBV-606H
RBV-4106M
RBV-1306
RBV-1506S
RBV-1506J
RBV-1506
RBV-2506
RBV-408
600
13
15
150
150
200
350
100
170
100
200
15
15
25
1.05 12.5
4.0
6.0
4.0
15
1.00
0.95
1.00
1.05
2.0
3.0
2.0
7.5
800
RBV-608
100
50
RBV-40C
RBV-150C
1000
200
*1: Schottky barrier diode
*2: Ultrafast recovery diode (trr=40ns)
*3: Ultrafast recovery diode (trr=50ns)
Diodes
182
Package Type (Dimensions)
• No. 13 Axial (
φ2.7/
φ0.6)
• No. 14 Axial (φ2.7/φ0.78)
• No. 15 Axial (φ4.0/φ0.78)
Silicon Varistors (Symmetrical)
φ
0.78±0.05
φ
0.78±0.05
φ
0.6
Cathode band
Cathode band
±0.2
φ
2.7
4.0±0.2
φ
2.7±0.2
φ
• No. 16 Axial (φ4.0/φ0.98)
• No. 17 Axial (φ5.2/φ1.2)
• No. 18 Axial (φ6.5/φ1.4)
1.2±0.05
φ
0.98±0.05
φ
φ
1.4±0.1
Cathode band
Cathode band
Cathode band
φ
5.2±0.2
φ
6.5±0.2
φ
4.0±0.2
• No. 19 Axial (φ10.0/φ1.3)
• No. 20 TO-220F (Two Elements)
• No. 21 TO-220F (Center-tap)
4.2 0.2
2.8±0.2
4.2±0.2
2.8±0.2
10.0±0.2
10.0±0.2
C0.5
C0.5
1.3±0.05
C2
φ 3.3±0.2
φ 3.3±0.2
Cathode band
a
a
b
c
b
c
1.35±0.15
1.35±0.15
1.35±0.15
+0.2
1.35±0.15
+0.2
10.0±0.2
0.85
−0.1
0.85
−0.1
+0.2
−0.1
2.4±0.2
+0.2
−0.1
0.45
2.4±0.2
0.45
2.54
2.54
2.54
2.54
S type
R type
S type
R type
U type
a: Part Number
b: Polarity
c: Lot No.
a: Part Number
b: Polarity
c: Lot No.
• No. 22 TO-220F2Pin
• No. 23 TO-220F2Pin (Two Elements)
• No. 24 TO-3PF
5.5±0.2
3.45±0.2
15.6±0.2
4.2
10.0
4.2
10.0
φ
3.3
2.8
3.3
2.8
±0.2
f
3.3
a
b
2.2
2.2
2.6
2.6
1.75±0.15
0.8
2.15±0.15
1.35
0.85
1.35
0.85
+0.2
1.05
-0.1
+0.2
-0.1
5.45±0.1
5.45±0.1
3.35±0.2
0.65
0.45
5.08
0.45
5.08
q
w
q
w
1.5 4.4 1.5
a: Part Number
b: Lot No.
Diodes
197
Characteristic Curves
Rectifier Diodes
RO 2 series
IFMS Rating
VF —IF Cha racteristics (Typical)
Ta —IF (AV) Derating
50
10
80
1.5
20ms
1.2
0.9
0.6
0.3
0
60
40
20
1
0.1
=
T
a
150°C
100°C
60°C
0.01
25°C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1
1
1
1
1
5
10
50
50
50
50
50
0
25
50
75
100
125 150
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
RM 3 series
IFMS Rating
VF —IF Cha racteristics (Typical)
Ta —IF (AV) Derating
2.5
10
1
150
100
L= 20 mm
L= 20 mm
20ms
2.0
1.5
1.0
0.5
0
P. C. B. 1.6 t
Solder Land
5.5
RM3C
0.1
RM 3
50
0
=
T
a
100°C
25°C
0.01
0.001
RM 3B
5
10
0
25
50
75
100
125 150
0.3
0.5
0.7
0.9
1.1
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
RM 4 series
IFMS Rating
VF —IF Cha racteristics (Typical)
Ta —IF (AV) Derating
200
160
120
80
100
10
3.75
3.00
2.25
1.50
5 mm
5 mm
RM 4Y
RM 4Z
RM 4
RM 4A
1
RM4B
RM4C
40
0.75
0
0
0.1
0
0
0
1.0
2.0
5
10
0
25
50
75
100
125 150
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
RM 4M series
IFMS Rating
VF —IF Cha racteristics (Typical)
Ta —IF (AV) Derating
3.5
100
10
1
350
300
20ms
2.8
2.1
1.4
0.7
0
5 mm
5 mm
200
100
0
0.1
=
T
a
150°C
100°C
25°C
0.01
0.001
0
25
50
75
100
125 150
0.2
0.4
0.6
0.8
1.0
1.2
5
10
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
FMM-2 series
Tc —IF(AV) Derating
IF(AV)—PF Characteristics
IFMS Rating
15
12
9
100
90
80
70
60
50
40
30
20
10
0
10
=
=
j
t / T 1/2
T
150°C
=
t / T 1/ 3, Sinewave
20ms
t
T
8
D.C.
=
t / T 1/6
=
t / T 1/6
=
t / T 1/ 3, Sinewave
6
4
=
t / T 1/2
6
D.C.
2
0
3
0
75
90
105
120
135
150
2
4
6
8
10
5
10
Average Forward Current IF(AV) (A)
Case Temperature Tc (°C)
Overcurrent Cycles
50
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