SI-3033KD [ALLEGRO]
Surface-Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs; 表面贴装，低消耗电流，低压差线性稳压器IC
| 型号： | SI-3033KD |
| 厂家： | 
ALLEGRO MICROSYSTEMS |
| 描述： | Surface-Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs |
| 文件： | 总3页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1-1-1 Linear Regulator ICs
SI-3000KD Series Surface-Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs
■Features
■Absolute Maximum Ratings
(Ta=25°C)
• Compact surface-mount package (TO263-5)
Ratings
Unit
Parameter
Symbol
3033KD
SI-3012KD/
SI-3010KD/3050KD
35*1
• Output current: 1.0A
DC Input Voltage
VIN
IO
17
V
A
• Low dropout voltage: VDIF ≤ 0.6V (at IO = 1.0A)
DC Output Current
1.0
*2
Power Dissipation
PD
3
–30 to +125
–30 to +125
33.3
W
• Low circuit current consumption: Iq ≤ 350 µA
(600 µA for SI-3010KD, SI-3050KD
Junction Temperature
Tj
°C
°C
°C/W
°C/W
Storage Temperature
Tstg
θj-a
θj-c
•
Low circuit current at output OFF: Iq (OFF) ≤ 1 µA
Thermal Resistance (Junction to Ambient Air)
Thermal Resistance (Junction to Case)
• Built-in overcurrent, thermal protection circuits
3
*1: A built-in input-overvoltage-protection circuit shuts down the output voltage at the Input Overvoltage Shutdown Voltage
of the electrical characteristics.
*2: When mounted on glass-epoxy board of 1600mm2 (copper laminate area 100%).
•
Compatible with low ESR capacitors (SI-3012KD
and SI-3033KD)
■Applications
• Secondary stabilized power supply (local power supply)
■
Electrical Characteristics 1 (Low V
O
type compatible with low ESR output capacitor)
(Ta=25°C, VC=2V unless otherwise specified)
Ratings
Parameter
Symbol
SI-3012KD (Variable type)
SI-3033KD
Unit
min.
2.4*3
1.24
typ.
max.
*4
min.
*3
typ.
max.
*4
Input Voltage
VIN
V
V
Output Voltage
VO (VADJ)
Conditions
∆VOLINE
1.28
1.32
15
3.234
3.300
3.366
15
(Reference Voltage for SI-3012KD)
VIN=3.3V, IO=10mA
VIN=5V, IO=10mA
mV
mV
Line Regulation
Load Regulation
Conditions
∆VOLOAD
Conditions
VDIF
VIN=3.3 to 8V, IO=10mA (VO=2.5V)
VIN=5 to 10V, IO=10mA
VIN=5V, IO=0 to 1A
IO=0.5A
40
50
V
IN=3.3V, IO=0 to 1A (VO=2.5V)
0.4
0.6
350
1
0.4
0.6
350
1
Conditions
IO=0.5A (VO=2.5V)
IO=1A (VO=2.5V)
V
Dropout Voltage
Conditions
Iq
IO=1A
µA
µA
Quiescent Circuit Current
Conditions
Iq (OFF)
Conditions
∆VO/∆Ta
Conditions
RREJ
VIN=3.3V, IO=0A, VC=2V, R2=2.4kΩ
VIN=5V, IO=0A,VC=2V
Circuit Current at Output OFF
VIN=3.3V, VC=0V
VIN=5V, VC=0V
Temperature Coefficient of
Output Voltage
0.3
0.3
Tj=0 to 100°C
mV/°C
dB
Tj=0 to 100°C (VO=2.5V)
55
55
Ripple Rejection
Conditions
IS1
VIN=3.3V, f=100 to 120HZ, IO=0.1A (VO=2.5V)
1.1
VIN=5V, f=100 to 120HZ, IO=0.1A
Overcurrent Protection Starting
1.1
2
A
*1
Current
Conditions
VC, IH
VIN=3.3V
VIN=5V
*2
Control Voltage (Output ON)
2
V
Control Voltage (Output OFF)
Control Current (Output ON)
VC, IL
0.8
40
0.8
40
V
C
IC, IH
µA
Terminal
Conditions
IC, IL
VC=2V
0
VC=2V
0
–5
–5
µA
Control Current (Output OFF)
Conditions
VC=0V
VC=0V
*1: IS1 is specified at the 5% drop point of output voltage VO under the condition of Output Voltage parameter.
*2: Output is OFF when the output control terminal (VC terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs.
*3: Refer to the Dropout Voltage parameter.
*4: VIN (max) and IO (max) are restricted by the relation PD = (VIN - VO) × IO. Please calculate these values referring to the Copper laminate area vs. Power dissipation data.
ICs
20
SI-3000KD Series
■Electrical Characteristics 2 (High VO Type)
Ratings
Parameter
Symbol
SI-3010KD (Variable type)
typ.
SI-3050KD
typ.
Unit
min.
2.4*1
0.98
max.
27*5
min.
*1
max.
15*5
Input Voltage
VIN
V
V
Output Voltage
VO
(VADJ
)
1.00
1.02
4.90
5.00
5.10
(Reference Voltage VADJ for SI-3010KD)
Conditions
V
IN=7V, I
O
=10mA
VIN=7V, IO=10mA
∆VOLINE
30
75
30
75
mV
mV
Line Regulation
Load Regulation
V
IN=6 to 11V,
Conditions
∆VOLOAD
VIN=6 to 11V, IO=10mA
I
O
=10mA (V =5V)
O
V
IN=7V,
Conditions
V
IN=7V, IO=0 to 1A
IO
=0 to 1A (VO=5V)
V
DIF
0.3
0.6
600
0.3
0.6
600
Conditions
I
O
=0.5A (V
O
=5V)
IO=0.5A
V
Dropout Voltage
Conditions
I
O
=1A (V
O
=5V)
IO=1A
I
q
µ
A
A
Quiescent Circuit Current
V
IN=7V, I
O
=0A, V
C
=2V
V
IN=7V, I
O=0A,
Conditions
R2=10kΩ
V
C=2V
I
q
(OFF)
1
1
µ
Circuit Current at Output OFF
Conditions
V
IN=7V, V
C
=0V
V
IN=7V, V
0.5
C=0V
Temperature Coefficient of
Output Voltage
∆VO/∆Ta
0.5
mV/°C
Conditions
T
j
=0 to 100°C (V
O
=5V)
Tj=0 to 100°C
RREJ
75
75
dB
Ripple Rejection
V
IN=7V,
V
IN=7V,
Conditions
f=100 to 120Hz, I =0.1A (V
O
O=5V)
f=100 to 120Hz, IO=0.1A
*2
I
S1
1.1
2.0
1.1
2.0
Overcurrent Protection Starting Current
*4
A
V
Conditions
, IH
V
IN=7V
VIN=7V
*3
Control Voltage (Output ON)
VC
*3
Control Voltage (Output OFF)
V
C
, IL
0.8
40
0.8
40
VC
I
C, IH
µ
A
A
Control Current (Output ON)
Control Current (Output OFF)
Terminal
Conditions
, IL
Conditions
VC
=2V
V
V
C
=2V
0
I
C
–5
33
0
–5
26
µ
VC
=0V
C=0V
Input Overvoltage Shutdown
Voltage
VOVP
V
Conditions
I
O
=10mA
IO=10mA
*1: Refer to the Dropout Voltage parameter.
*2: Is1 is specified at the 5% drop point of output voltage VO under the condition of Output Voltage parameter.
*3: Output is OFF when the output control terminal (VC terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs.
*4: SI-3010KD, SI-3050KD, cannot be used in the following applications because the built-in foldback-type overcurrent protection may cause errors during start-up stage.
(1) Constant current load (2) Positive and negative power supply (3) Series-connected power supply (4) VO adjustment by raising ground voltage
*5: VIN (max) and IO (max) are restricted by the relation PD = (VIN - VO) ✕ IO. Please calculate these values referring to the Copper laminate area vs. Power dissipation data as shown
hereinafter.
■External Dimensions (TO263-5)
(unit : mm)
Case temperature
measurement point
0.2
10.0
(8.0)
(4.4)
(15°)
0.2
4.5
+0.10
–0.05
1.3
3-R0.3
Pin Assignment
q VC
0.2
(2×R0.45)
(3°)
φ1.5 Dp:
w VIN
e GND (Common to the rear side of product)
0.15
0.10
(3°)
r VO
(3°)
0.2
2.4
(R0.3)
t Sense
(ADJ for SI-3010KD/3012KD)
0.10
0.25
0.88
(1.7
(R0.3)
0~6°
(0.5)
Plastic Mold Package Type
Flammability: UL94V-0
0.1
0.1
0.8
0.8
0.25
0.25
0.25
)
(1.7
)
(1.7
)
(1.7
)
1
2
3
4
5
Product Mass: Approx. 1.48g
0.2
9.9
(3°)
(3°)
2-R0.3
0.02
10.0
ICs
21
1-1-1 Linear Regulator ICs
■Block Diagram
●SI-3010KD/SI-3012KD
●SI-3033KD/SI-3050KD
V
IN
2
1
4
5
VO
V
IN
2
1
4
5
Vo
Sense
ADJ
V
C
V
C
TSD
TSD
-
-
+
+
REF
REF
3
3
GND
GND
■Typical Connection Diagram
●SI-3033KD/SI-3050KD
●SI-3010KD/SI-3012KD
D1*2
D1*2
*1
*3
R3
*1
V
2
IN
VO
4
V
2
IN
VO
4
R1
+
+
+
+
sense
5
V
1
C
V
1
C
ADJ
5
GND
3
GND
3
Load
Load
CIN
CIN
CO
CO
R2
CIN: Input capacitor (22 µF or larger)
R1, R2: Output voltage setting resistors
CO: Output capacitor
The output voltage can be set by connecting R1 and R2 as shown
above.
*1: SI-3012KD/3033KD (22 µF or larger)
The recommended value for R2 is 10Ω (24kΩ for SI-3012KD).
Co has to be a low ESR capacitor such as a ceramic capacitor.
When using the electrolytic capacitor, oscillation may occur at a low temperature.
SI-3010KD/3050KD/ (47 µF or larger)
R1=(VO–VADJ)÷(VADJ/R2)
If a low ESR capacitor is used, oscillation may occur.
*3: For SI-3010KD, insert R3 in case of setting VO to VO ≤ 1.5V.
The recommended value for R3 is 10kΩ.
*2: D1: Reverse bias protection diode
This diode is required for protection against reverse biasing between the input
and output.
(Sanken SJPL-H2 is recommended.)
This diode is not required at VO ≤ 3.3V.
■Reference Data
Copper Laminate Area (on Glass-Epoxy Board) vs.
Thermal Resistance (from Junction to Ambient Temperature) (Typical Value)
55
50
45
40
35
30
• A higher heat radiation effect can be achieved by enlarging the copper laminate
area connected to the inner frame to which a monolithic ICs is mounted.
• Obtaining the junction temperature
When Using Glass-Epoxy Board of 40 × 40 mm
θ
Measure the case temperature TC with a thermocouple, etc. Then, substitute
this value in the following formula to obtain the junction temperature.
Tj=PD × θj–C + TC ( θj–C = 3°C/W) PD= (VIN–VO)•IOUT
0
200
400
600
800
1000 1200 1400 1600 1800
Copper Laminate Area (mm2)
ICs
22
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