AMG-DF102 [ALPHA-MICRO]
Full Bridge MOSFET/IGBT Driver up to 600V; 全桥MOSFET / IGBT驱动高达600V
| 型号： | AMG-DF102 |
| 厂家： | 
ALPHA MICROELECTRONICS GMBH |
| 描述： | Full Bridge MOSFET/IGBT Driver up to 600V |
| 文件： | 总12页 (文件大小：566K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
1. Functional Description of the AMG-DF102
The AMG-DF102 is a high voltage MOSFET and IGBT driver with two dependent high and low
side output channels for Full-Bridge applications. The IC AMG-DF102 has an additional driver
in high side configuration to drive a buck converter.
CMOS and TTL compatible input levels. Logic inputs are CMOS Schmitt-triggered with pull-
down resistors.
The floating high side outputs are designed for bootstrap operation so to drive an N-channel
power MOSFET or IGBT in high side configuration.
During start up the input ENQ need to be tied to VCC to pull the driver outputs low. With ENQ
being pulled low, the device is enabled. This protects against unwanted behaviour of the
power stage during the start up process, when the supply voltage is rising.
2. Features
Logic supply range from 12 to 15V
CMOS Schmitt-triggered input logic with pull-down
Internally inserted dead time
High side output follows corresponding input
Floating high side outputs designed for bootstrap operation
Enable input turns off all outputs
Under-voltage detection for all outputs
Temperature range –25°C to 85°C
Package SOP24
3. Application
The AMG-DF102 is suitable for High Voltage Power Supplies, Motor Controls, Inverters,
Battery Chargers and Lamp Ballasts.
AMG-DF102
Revision: AB
30. Nov. 2010
© All rights reserved
Page 1 of 12
AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
3.1. Example Application Drawing
400V
VS
IH
VBH
HOH
INB
IN1
IN2
IN1
IN2
VSH
VB1
H01
VS1
L01
LOAD
VB2
H02
VS2
L02
GND
GND
Figure 1: Please insert a clear example application drawing here.
3.2. Application Notes
Transistors, bootstrap diodes and caps physically need to be placed as close as possible to
the IC. Via's and 90º trace curves should be avoided. For best performance the distance
between the transistors, bootstrap diodes and caps - and the IC should be kept under 1cm,
traces to the transistors should be straight and min. 1mm wide, if needed only 45º trace
curves. Bootstrap diodes need to be fast switching diodes. Bootstrap capacitors need to have
low ESR. Traces to/from the bootstrap diodes and caps should be min. 1mm wide, as short as
possible and only 45º curves used.
Additional information may be found in Application Note: AMG-AN-DF102
AMG-DF102
Revision: AB
30. Nov. 2010
© All rights reserved
Page 2 of 12
AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
Table of Contents
1.Functional Description of the AMG-DF102.............................................................................1
2.Features.................................................................................................................................1
3.Application.............................................................................................................................1
3.1.Example Application Drawing...................................................................................................2
3.2.Application Notes.....................................................................................................................2
4.Block Diagram.......................................................................................................................4
5.Block Descriptions.................................................................................................................5
5.1.Voltage Divider VCC.................................................................................................................5
5.2.Input Enable.............................................................................................................................5
5.3.Trigger input ............................................................................................................................5
5.4.UV Detection on VCC...............................................................................................................5
5.5.Logic and dead time.................................................................................................................5
5.6.Pulse-Generator.......................................................................................................................5
5.7.HV-Level-Shifter.......................................................................................................................5
5.8.Filter..........................................................................................................................................5
5.9.R-S...........................................................................................................................................5
5.10.UV Detection for the High Side..............................................................................................6
5.11.DRV........................................................................................................................................6
6.Pinning...................................................................................................................................6
7.Pin description.......................................................................................................................7
8.Absolute Maximum Ratings...................................................................................................8
9.Electrical Characteristics........................................................................................................8
9.1.Operational Range...................................................................................................................8
9.2.DC Characteristics...................................................................................................................9
9.3.Logic Characteristics................................................................................................................9
9.4.AC Characteristics..................................................................................................................10
10.IC-Package........................................................................................................................10
11.IC-Marking..........................................................................................................................11
12.Ordering Information..........................................................................................................11
13.Notes and Cautions............................................................................................................11
13.1.ESD Protection.....................................................................................................................11
13.2.Storage conditions................................................................................................................11
14.Disclaimer..........................................................................................................................12
15.Contact Information............................................................................................................12
AMG-DF102
Revision: AB
30. Nov. 2010
© All rights reserved
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
4. Block Diagram
VBH
VDD
VDD
UV
HV
LEVEL
SHIFTER
S
R
Q
VCC
FILTER
_
Q
OHB
DRV
+
INB
PULSE
GENERATOR
Logic
-
VSH
VB1
UV
HV
LEVEL
SHIFTER
S
R
Q
FILTER
_
Q
OH1
VS1
DRV
+
IN1
Logic
and
PULSE
GENERATOR
-
dead time
VDD
VCC
DRV
OL1
VB2
Vref
UV
HV
LEVEL
SHIFTER
S
R
Q
FILTER
_
Q
OH2
VS2
DRV
+
IN2
Logic
and
PULSE
GENERATOR
dead time
-
VCC
VDD
ENQ
GND
UV
Detect
ENABLE
DRV
OL2
PGND
Figure 2: Block Diagram
AMG-DF102
Revision: AB
30. Nov. 2010
© All rights reserved
Page 4 of 12
AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
5. Block Descriptions
5.1. Voltage Divider VCC
• Internal reference voltage for logic inputs (connection to INB, IN1, IN2).
5.2. Input Enable
• Enables the digital inputs and the UV-Detection for VCC. The ENQ is a CMOS input
equipped with a pull-up resistor. The enable input needs be pulled low to enable device
operation. If the enable pin is left unconnected or pulled high, all outputs are pulled low.
5.3. Trigger input
• CMOS differential amplifier with hysteresis. The negative input is attached to the internal
reference while the positive input is connected to the corresponding input pins. Inputs are
equipped with a pull-down resistor.
5.4. UV Detection on VCC
• CMOS comparator with a hysteresis to detect under voltage supply conditions on VCC.
5.5. Logic and dead time
• Input logic and dead time insertion. The dead time is set internally by an RC-combination.
5.6. Pulse-Generator
• Pulse generation from falling and rising edges of the input signal. These pulses are
transmitted to the floating high side gate driver stages. This leads to lower power
consumption.
5.7. HV-Level-Shifter
• Level shifting the pulses of the pulse generators to the floating high side driver output
stages.
5.8. Filter
• Filtering noise and transients.
5.9. R-S
•
Latch for storing the current output state.
AMG-DF102
Revision: AB
30. Nov. 2010
© All rights reserved
Page 5 of 12
AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
5.10. UV Detection for the High Side
•
Detecting under voltage conditions during power up and during operation. Pulling the high
side drivers low in case of too low a supply.
5.11. DRV
•
CMOS gate driver output stage for low and high side.
6. Pinning
PIN#
1
Symbol
Description
INB
Logic input for high side gate driver output OHB
Input to enable device operation (active low)
Ground
2
ENQ
GND
PGND
OL1
n.c.
3
4
Power Ground
5
Low side gate driver output, inverted to IN1
6
7
VB1
OH1
VS1
n.c.
High side gate driver supply
8
High side gate driver output, in phase with IN1
High side gate driver supply return
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
VBH
OHB
VSH
n.c.
High side buck driver supply
High side gate driver output, in phase with INB
High side buck driver supply return
n.c.
VS2
OH2
VB2
n.c.
High side gate driver supply return
High side gate driver output, in phase with IN2
High side gate driver supply
VDD
OL2
VCC
IN2
Low side driver supply
Low side gate driver output, inverted to IN2
Logic supply
Input for high and low side gate drive outputs OH2 + OL2
Input for high and low side gate drive outputs OH1 + OL1
IN1
AMG-DF102
Revision: AB
30. Nov. 2010
© All rights reserved
Page 6 of 12
AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
24
1
INB
ENQ
IN1
IN2
GND
PGND
OL1
VCC
OL2
VDD
VB1
OH1
VS1
VB2
OH2
VS2
VBH
OHB
VSH
13
12
Top View
7. Pin description
VCC
VDD
GND
PGND
IN1
Logic supply
Low side driver supply
Signal and logic GND
Power ground, supply return for low side gate drivers (bridge)
Signal input for the first half bridge
IN2
Signal input for the second half bridge
INB
Signal input for the buck converter high side driver
Enable input, enables the inputs, low active
High side supply for the buck converter high side driver
High side buck converter gate driver output
High side supply return for the buck converter gate drive OHB
High side supply for high side gate drivers (bridge)
High side gate driver outputs (bridge)
ENQ
VBH
OHB
VSH
VB1,2
OH1,2
VS1,2
OL1,2
High side supply return for gate drivers OH1,2 (bridge)
Low side driver outputs (bridge)
AMG-DF102
Revision: AB
30. Nov. 2010
© All rights reserved
Page 7 of 12
AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
8. Absolute Maximum Ratings
The maximum ratings may not under any circumstances be exceeded, TA = -25°C bis 85°C
#
1
2
3
4
5
6
7
8
9
Symbol
VCC
Parameter
Min
-0.3
Max
18
Unit
V
Logic supply voltage
VDD
Low side driver supply voltage
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Logic input voltage (IN1, IN2, INB)
Input voltage Enable (ENQ)
-0.3
18
V
VBx
-0.3
618
V
VSx
VBX - 181
VSX –0.3
-0.3
VBX + 0.3
VBX + 0.3
VCC+0.3
VCC+0.3
150
V
VOH
V
VINX
V
VENQ
-0.3
V
2
TJ
Junction Temperature
-25
°C
°C
K/W
V
T
stg
Storage temperature range
-55
150
10 Rthja
Thermal resistance junction to ambient
ESD (acc. HMB), pins IN1, IN2, INB and ENQ
ESD (according to HMB), all other pins
80
3
11 VESD
-500
500
4
12 VESD
-1000
1000
V
9. Electrical Characteristics
9.1. Operational Range
#
Symbol Parameter
Min
Max
Unit
1
VSX +12
VSX +15
V
VBx
VSx
VDD
VCC
fs
Absolute high side supply voltage
2
3
4
5
6
7
8
9
400
15
V
V
High side floating supply offset voltage
Low side driver supply voltage
Logic supply voltage
12
12
15
V
120
KHz
V
Switching frequency
VGND
VGND
1
VGND + VCC
VGND + VCC
VINX
VENQ
tpw
Logic input voltage ( INB, IN1, IN2, pull-down)
Enable input voltage (ENQ, pull-up)
High side pulse width (PWM)
Ambient temperature
V
µs
°C
-25
85
TA
1 The suffix x is a replacement for a respective 1, 2 or B
2 TJ = Rthja * Ptot + TA
3 HBM for Inputs only
4 HBM for Inputs only
AMG-DF102
Revision: AB
30. Nov. 2010
© All rights reserved
Page 8 of 12
AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
9.2. DC Characteristics
DC characteristics contain the spread of values guaranteed within the specified supply voltage
and temperature range and the technology process parameter range unless otherwise
specified.
Typical values are valid at VCC = VDD =15V, VBX-VSX =15V, ENQ=Low, TJ = 25°C unless stated.
#
Symbol Parameter
IQCC Quiescent VCC supply current
Conditions Min Typ Max
Unit
1
0.8
2
1.4
2.5
0.6
1.6
mA
INX=open
INX=open
INX=open
INX=open
INX=open
INX=open
2
3
4
5
6
mA
mA
mA
V
IQDD
Quiescent VDD supply current
0.4
0.9
IQBH
Quiescent VBH supply current
IQBX
Quiescent VBX supply current
tbd 11.6 tbd
VCCUV+
VCCUV-
Rising VCC supply undervoltage threshold
Falling VCC supply undervoltage threshold
tbd 10.
8
tbd
-
V
7
200 tbd
150 tbd
mA
mA
IO-
Output Low short circuit pulsed current
VO=12V
tPW<1µs,
TJ =25°C
8
-
IO+
Output High short circuit pulsed current
VO=0V
tPW<1µs,
TJ =25°C
9.3. Logic Characteristics
#
1
2
3
4
Symbol Parameter
Conditions
Min
Typ
Max Unit
-
9.0
-
4.5
5.5
-
V
V
VINL
VINH
IINH
Low input voltage (INB, IN1, IN2)
10.0
20
-
High input voltage (INB, IN1, IN2,)
High input bias current (pull-down)
Low input bias current (pull-down)
60
1
µA
µA
-
IINL
VIN=0.1V
AMG-DF102
Revision: AB
30. Nov. 2010
© All rights reserved
Page 9 of 12
AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
9.4. AC Characteristics
AC characteristics contain the spread of values guarantee within the specified supply voltage
and temperature range and the technology process parameter range unless otherwise
specified.
All values are valid at VCC = VDD =15V, VBX-VSX =15V, CLoad=1000pF, TJ= 25°C unless stated.
#
Symbol
Parameter
Typ
1200
Max
Unit
ns
5
1
tonINX
Turn-on propagation delay
4
2
3
4
50
100
50
ns
ns
ns
toffINX
Turn-off propagation delay
Turn on rise time
tr
tf
Turn off fall time
10. IC-Package
24-pin Plastic SOP
A
A 1
w
e
b
L
D
Small Outline Package (SOP)
SOP24
JEDEC MS-012
300 mil
Dimensions
(mm)
D
E
H
A
A1
e
b
L
w
nom
15.3
7.5
10.31
2.54
0.20
1.27
0.41
0.76
4°
5 The suffix x is a replacement for a respective 1, 2
AMG-DF102
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30. Nov. 2010
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
11. IC-Marking
ɑDF102
4 digits date code = 2 digits year + 2 digits work week
8 digits lot number = 2 digits fab process + 4 digits lot number + 1 digit sub lot
12. Ordering Information
AMG-DF102-ISP24U
AMG-DF102-ISP24R
shipment in tubes
shipment in Tape & Reel
13. Notes and Cautions
13.1. ESD Protection
The Requirements for Handling Electrostatic Discharge Sensitive Devices are described in the
JEDEC standard JESD625-A. Please note the following recommendations:
When handling the device, operators must be grounded by wearing a for the purpose
designed grounded wrist strap with at least 1MΩ resistance and direct skin contact.
Operators must at all times wear ESD protective shoes or the area should be
surrounded by for ESD protection intended floor mats.
Opening of the protective ESD package that the device is delivered in must only occur at
a properly equipped ESD workbench. The tape with which the package is held together
must be cut with a sharp cutting tool, never pulled or ripped off.
Any unnecessary contact with the device or any unprotected conductive points should be
avoided.
Work only with qualified and grounded tools, measuring equipment, casing and
workbenches.
Outside properly protected ESD-areas the device or any electronic assembly that it may
be part of should always be transported in EGB/ESD shielded packaging.
13.2. Storage conditions
The AMG-DF102 corresponds to moisture sensitivity classification ML2, according to JEDEC
standard J-STD-020, and should be handled and stored according to J-STD-033.
AMG-DF102
Revision: AB
30. Nov. 2010
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AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
14. Disclaimer
Information given in this data sheet is believed to be accurate and reliable. However, no
responsibility is assumed for the consequences of its use nor for any infringement of patents
or other rights of third parties that may result from its use.
The values stated in Absolute Maximum Ratings may under no circumstances be exceeded.
No warranty is given for use in life support systems or medical equipment without the specific
written consent of alpha microelectronics gmbh. For questions regarding the application
please contact the publisher.
The declared data are only a description of the product. They are not guaranteed properties
as defined by law. Examples are given without obligations and cannot give rise to any liability.
Reprinting of this data sheet – or any part of it – is not allowed without the license of the
publisher. Data sheets are subject to change without any notice.
15. Contact Information
This data sheet is published by alpha microelectronics gmbh. To order samples or inquire
information please contact:
alpha microelectronics gmbh
Im Technologiepark 1
15236 Frankfurt (Oder)
Germany
am.info@alpha-microelectronics.de
www.alpha-microelectronics.de
+49-335-557-1750 (telephone)
+49-335-557-1759 (fax)
© All rights reserved.
AMG-DF102
Revision: AB
30. Nov. 2010
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