AM038R1-00 [ALPHA]

33-43 GHz GaAs MMIC Image Rejection Balanced Mixer; 33-43 GHz的砷化镓MMIC镜像抑制混频器平衡
AM038R1-00
型号: AM038R1-00
厂家: ALPHA INDUSTRIES    ALPHA INDUSTRIES
描述:

33-43 GHz GaAs MMIC Image Rejection Balanced Mixer
33-43 GHz的砷化镓MMIC镜像抑制混频器平衡

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33–43 GHz GaAs MMIC  
Image Rejection Balanced Mixer  
AM038R1-00  
Features  
Chip Outline  
I Low Conversion Loss, 9 dB  
I Low LO Power Requirement, 8 dBm  
I Image Rejection, 18 dB  
1.785  
I No DC Bias Required  
1.258  
0.890  
I Requires External IF 90° Hybrid  
0.890  
0.000  
Description  
Alpha’s image rejection balanced GaAs Schottky diode  
mixer has a typical conversion loss of 9 dB at an LO power  
level as low as 8 dBm over the band 33–43 GHz. An  
5
0
O
H
M
S
0.489  
external 90° IF hybrid is required to combine the IF and  
IF signals at the desired IF frequency. The chip uses  
2
1
0.085  
Alpha’s proven Schottky diode technology, and is based  
upon MBE layers for the highest uniformity and  
repeatability. The diodes employ surface passivation to  
ensure a rugged, reliable part with through-substrate via  
holes and gold-based backside metallization to facilitate  
an epoxy die attach process. All chips are screened for  
DC diode parameters and lot samples are RF measured  
to guarantee performance.This device is recommended  
for applications requiring down conversion.  
Dimensions indicated in mm.  
All pads are 0.07 mm wide.  
Chip thickness = 0.1 mm.  
Absolute Maximum Ratings  
Characteristic  
Operating Temperature  
Storage Temperature  
Value  
-55°C to +125°C  
-65°C to +150°C  
23 dBm  
Total Input Power (RF + LO)  
Electrical Specifications at 25°C  
Parameter  
RF and LO Frequency Range  
IF Frequency Range  
2
Symbol  
, F  
Min.  
Typ.  
33–43  
0–3  
8–14  
9
Max.  
Unit  
GHz  
GHz  
dBm  
dB  
F
RF LO  
F
IF  
LO Power Level  
P
LO  
1
Conversion Loss  
L
C
1
Image Rejection  
IR  
RL , RL  
18  
dB  
1
RF and LO Return Loss  
12  
dB  
RF  
LO  
1
LO to RF Isolation  
ISO  
ISO  
12  
dB  
LO-RF  
1
LO to IF Isolation  
23  
dB  
LO-IF  
1
RF Input 1 dB Compression Point  
P
7
dBm  
1 dB  
Individual Diode Series Resistance  
R
3.0  
S
1. Not measured on a 100% basis.  
2.Typical represents the median parameter value across the specified  
frequency range for the median chip.  
Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com  
1
Specifications subject to change without notice. 2/00A  
33–43 GHz GaAs MMIC Image Rejection Balanced Mixer  
AM038R1-00  
Typical Performance Data  
16  
14  
12  
10  
8
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
50  
LO to IF Isolation  
40  
30  
20  
10  
0
LO to IF Isolation  
Conversion Loss  
Conversion Loss  
LO Return Loss  
LO Return Loss  
LO to RF Isolation  
15 17 19  
LO to RF Isolation  
6
6
31  
32  
33  
34  
35  
36  
37  
38  
7
9
11  
13  
LO Power (dBm)  
LO Frequency (GHz)  
Performance vs. LO Power  
Performance vs. LO Frequency  
F = F + 2 GHz, P = 10 dBm  
RF  
F
RF  
= 40 GHz, F = 38 GHz, P = -10 dBm  
LO  
RF  
LO  
LO  
25  
25  
20  
15  
10  
5
20  
15  
10  
5
0
0
7
9
11  
13  
15  
17  
19  
31  
32  
33  
34  
35  
36  
37  
38  
LO Power (dBm)  
LO Frequency (GHz)  
Image Rejection vs. LO Power  
= 40 GHz, F = 38 GHz, P = -10 dBm  
Image Rejection vs. LO Frequency  
= F + 2 GHz, P = 10 dBm  
F
RF  
F
RF  
LO  
RF  
LO  
LO  
Image Frequency = 36 GHz  
Image Frequency = F - 2 GHz  
LO  
Wire Bonding Configuration  
Circuit Schematic  
90˚ Phase Shifter/Splitter  
0˚ Splitter  
LO  
LO  
IF1  
RF  
RF  
IF2  
5
0
O
H
M
S
IF1  
IF2  
IF ports bonded to IF hybrid.  
2
Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com  
Specifications subject to change without notice. 2/00A  

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