AS7C259-35PC [ALSC]
Standard SRAM, 32KX9, 35ns, CMOS, PDIP32, 0.300 INCH, PLASTIC, DIP-32;
| 型号： | AS7C259-35PC |
| 厂家： | 
ALLIANCE SEMICONDUCTOR CORPORATION |
| 描述： | Standard SRAM, 32KX9, 35ns, CMOS, PDIP32, 0.300 INCH, PLASTIC, DIP-32 静态存储器 光电二极管 内存集成电路 |
| 文件： | 总8页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Performance
32K×9
AS7C259
AS7C259L
CMOS SRAM
32K×9 CMOS SRAM (Common I/O)
FEATURES
•
•
Organization: 32,768 words × 9 bits
• 2.0V data retention (L version)
• Equal access and cycle times
High speed
– 12/15/20/25/35 ns address access time
– 3/4/5/6/8 ns output enable access time
• Easy memory expansion with CE1, CE2, and OE inputs
• TTL-compatible, three-state I/O
•
Low power consumption
• 32-pin JEDEC standard packages
– 300 mil PDIP and SOJ
– Active:
– Standby: 11 mW max, CMOS I/O
2.75 mW max, CMOS I/O, L version
– Very low DC component in active power
633 mW max (10 ns cycle)
• ESD protection > 2000 volts
• Latch-up current > 200 mA
LOGIC BLOCK DIAGRAM
PIN ARRANGEMENT
DIP, SOJ
Vcc
GND
NC
NC
A8
A7
A6
A5
A4
A3
A2
1
2
3
4
5
6
7
8
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A14
CE2
WE
A13
A9
A10
A11
OE
A12
CE1
I/O8
I/O7
I/O6
I/O5
I/O4
INPUT BUFFER
A0
A1
A2
A3
A4
A5
I/O8
I/O0
128 × 64 × 9
ARRAY
9
A1
A0
10
11
12
13
14
15
16
(294,912)
I/O0
I/O1
I/O2
I/O3
GND
A6
A14
WE
OE
COLUMN DECODER
CONTROL
CIRCUIT
CE1
CE2
A
7
A
8
A
9
A A A A
10 11 12 13
AS7C259-01
AS7C259-02
SELECTION GUIDE
7C259-12
7C259-15
7C259-20
7C259-25
7C259-35
Unit
Maximum Address Access Time
Maximum Output Enable Access Time
Maximum Operating Current
12
4
15
4
20
5
25
6
35
8
ns
ns
115
2.0
0.5
110
2.0
0.5
100
2.0
0.5
90
2.0
0.5
80
2.0
0.5
mA
mA
mA
Maximum CMOS Standby Current
L
Shaded areas contain advance information.
ALLIANCE SEMICONDUCTOR
AS7C259
AS7C259L
FUNCTIONAL DESCRIPTION
The AS7C259 is a high performance CMOS 294,912-bit A write cycle is accomplished by asserting write enable
(WE) and both chip enables (CE1, CE2). Data on the input
pins I/O0-I/O7 is written on the rising edge of WE (write
cycle 1) or the active-to-inactive edge of CE1 or CE2 (write
cycle 2). To avoid bus contention, external devices should
drive I/O pins only after outputs have been disabled with
output enable (OE) or write enable (WE).
Static Random Access Memory (SRAM) organized as
32,768 words × 9 bits. It is designed for memory applica-
tions where fast data access, low power, and simple interfac-
ing are desired.
Equal address access and cycle times (t , t , t ) of
AA RC WC
12/15/20/25/35 ns with output enable access times (t ) of
OE
A read cycle is accomplished by asserting output enable
(OE) and both chip enables (CE1, CE2), with write enable
(WE) HIGH. The chip drives I/O pins with the data word
referenced by the input address. When either chip enable or
output enable is inactive, or write enable is active, output
drivers stay in high-impedance mode.
3/4/5/6/8 ns are ideal for high performance applications.
Active high and low chip enables (CE1, CE2) permit easy
memory expansion with multiple-bank memory systems.
When CE1 is HIGH or CE2 is LOW the device enters
standby mode. The standard AS7C259 is guaranteed not to
exceed 11 mW power consumption in standby mode; the L
version is guaranteed not to exceed 1.1 mW. The L version
also offers 2.0V data retention.
All chip inputs and outputs are TTL-compatible, and opera-
tion is from a single 5V supply. The AS7C259 is packaged
in common industry standard packages.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Voltage on Any Pin Relative to GND
Power Dissipation
V
–0.5
–
+7.0
1.0
V
t
P
W
D
o
Storage Temperature (Plastic)
Temperature Under Bias
DC Output Current
T
–55
–10
–
+150
+85
20
C
stg
o
T
C
bias
I
mA
out
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
.
TRUTH TABLE
CE1
CE2
WE
OE
Data
Mode
Standby (I , I
H
X
L
L
L
X
L
X
X
H
H
L
X
X
H
L
High Z
High Z
High Z
)
)
SB SB1
Standby (I , I
SB SB1
H
H
H
Output Disable
Read
D
D
out
in
X
Write
Key: X = Don’t Care, L = LOW, H = HIGH
2
AS7C259
AS7C259L
RECOMMENDED OPERATING CONDITIONS
(T = 0°C to +70°C)
a
Parameter
Symbol
Min
4.5
Typ
5.0
0.0
–
Max
Unit
V
V
5.5
0.0
CC
Supply Voltage
GND
0.0
V
V
V
2.2
V
+1.0
CC
V
IH
IL
Input Voltage
*
–0.5
–
0.8
V
* V min = –3.0V for pulse width less than t /2.
IL
RC
1
DC OPERATING CHARACTERISTICS
(V = 5V±10%, GND = 0V, T = 0°C to +70°C)
CC
a
-12
-15
-20
-25
-35
Parameter
Symbol Test Conditions
Unit
Min Max Min Max Min Max Min Max Min Max
Input Leakage
Current
V
= Max,
CC
= GND to V
| I
|
–
–
1
1
–
–
1
1
–
–
1
1
–
–
1
1
–
–
1
1
µA
LI
V
in
CC
CE1 = V or CE2 = V
V
,
,
IH
IL
IL
Output Leakage
Current
| I
|
= Max,
µA
LO
CC
V
= GND to V
out
CC
–
–
–
–
–
115
110
40
–
–
–
–
–
110
105
30
–
–
–
–
–
100
95
–
–
–
–
–
90
85
25
20
2.0
–
–
–
–
–
80 mA
75 mA
25 mA
20 mA
2.0 mA
Operating Power
Supply Current
CE1 = V , CE2 = V ,
IL IH
f = f
I
I
CC
I
= 0 mA
L
max, out
30
CE1 = V or CE2 = V
f = f
IH
SB
Standby
Power Supply
Current
L
L
35
25
25
max
CE1 ≥ V –0.2V or CE2 ≤0.2V,
2.0
2.0
2.0
CC
I
V ≤ 0.2V or V ≥ V –0.2V,
SB1
in in CC
–
0.5
–
0.5
–
0.5
–
0.5
–
0.5 mA
f = 0
V
I
I
= 8 mA, V = Min
–
0.4
–
–
0.4
–
–
0.4
–
–
0.4
–
–
0.4
–
V
V
OL
OL
CC
Output Voltage
V
= –4 mA, V = Min
2.4
2.4
2.4
2.4
2.4
OH
OH
CC
Shaded areas contain advance information.
2
CAPACITANCE
(f = 1 MHz, T = room temperature, V = 5V)
a
CC
Parameter
Symbol
Signals
Test Conditions
Max
Unit
pF
pF
C
A, CE1, CE2, WE, OE
I/O
V
= 0V
5
7
Input Capacitance
I/O Capacitance
IN
in
C
V
= V = 0V
I/O
in
out
3
AS7C259
AS7C259L
3, 9, 12
READ CYCLE
(V = 5V±10%, GND = 0V, T = 0°C to +70°C)
a
CC
-20
Min Max Min Max Min Max Min Max Min Max
-12
-15
-25
-35
Parameter
Symbol
Unit Notes
ns
Read Cycle Time
t
t
t
t
t
t
t
t
t
t
t
t
t
t
12
–
–
–
–
3
3
3
–
–
0
–
0
–
–
12
12
12
3
15
–
–
–
–
3
3
3
–
–
0
–
0
–
–
15
15
15
4
20
–
–
–
–
3
3
3
–
–
0
–
0
–
–
20
20
20
5
25
–
–
–
–
3
3
3
–
–
0
–
0
–
–
25
25
25
6
35
–
–
–
–
3
3
3
–
–
0
–
0
–
–
35
35
35
8
RC
Address Access Time
ns
3
AA
Chip Enable (CE1) Access Time
Chip Enable (CE2) Access Time
Output Enable (OE) Access Time
Output Hold from Address Change
CE1 LOW to Output in Low Z
CE2 HIGH to Output in Low Z
CE1 HIGH to Output in High Z
CE2 LOW to Output in High Z
OE LOW to Output in Low Z
OE HIGH to Output in High Z
Power Up Time
ns 3, 12
ns 3, 12
ns
ACE1
ACE2
OE
–
–
–
–
–
ns
5
OH
–
–
–
–
–
ns 4, 5, 12
ns 4, 5, 12
ns 4, 5, 12
ns 4, 5, 12
ns 4, 5
CLZ1
CLZ2
CHZ1
CHZ2
OLZ
OHZ
PU
–
–
–
–
–
3
4
5
6
8
3
4
5
6
8
–
–
–
–
–
3
4
5
6
8
ns 4, 5
–
–
–
–
–
ns 4, 5, 12
ns 4, 5, 12
Power Down Time
12
15
20
25
35
PD
Shaded areas contain advance information.
3, 6, 7, 9, 12
TIMING WAVEFORM OF READ CYCLE 1
(Address Controlled)
t
RC
Address
t
AA
t
OH
D
Data Valid
out
AS7C259-03
3, 6, 8, 9, 12
TIMING WAVEFORM OF READ CYCLE 2
(CE1 and CE2 Controlled)
1
t
RC
CE1
CE2
OE
t
OE
t
t
t
OLZ
OHZ
t
, t
, t
ACE1 ACE2
CHZ1 CHZ2
D
out
Data Valid
t
, t
CLZ1 CLZ2
t
PD
I
I
CC
SB
t
Current
Supply
PU
50%
50%
AS7C259-04
4
AS7C259
AS7C259L
11, 12
WRITE CYCLE
(V = 5V±10%, GND = 0V, T = 0°C to +70°C)
a
CC
-20
Min Max Min Max Min Max Min Max Min Max
-12
-15
-25
-35
Parameter
Symbol
Unit Notes
Write Cycle Time
t
12
10
10
10
0
–
–
–
–
–
–
–
–
–
5
–
15
12
12
12
0
–
–
–
–
–
–
–
–
–
5
–
20
12
12
12
0
–
–
–
–
–
–
–
–
–
5
–
20
15
15
15
0
–
–
–
–
–
–
–
–
–
5
–
30
20
20
20
0
–
–
–
–
–
–
–
–
–
5
–
ns
WC
Chip Enable (CE1) to Write End
Chip Enable (CE2) to Write End
Address Setup to Write End
Address Setup Time
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
12
12
CW1
CW2
t
AW
t
12
AS
WP
AH
Write Pulse Width
t
t
8
9
12
0
15
0
17
0
Address Hold From End of Write
Data Valid to Write End
0
0
t
6
8
10
0
10
0
15
0
DW
Data Hold Time
t
0
0
4, 5
4, 5
4, 5
DH
WZ
OW
Write Enable to Output in High Z
t
–
–
–
–
–
Output Active From Write End
t
3
3
3
3
3
Shaded areas contain advance information.
10, 11, 12
TIMING WAVEFORM OF WRITE CYCLE 1
(WE Controlled)
t
WC
t
t
t
AW
AH
Address
WE
t
WP
t
AS
t
DW
DH
D
Data Valid
in
t
t
WZ
OW
D
out
AS7C259-05
10, 11, 12
TIMING WAVEFORM OF WRITE CYCLE 2
(CE1 and CE2 Controlled)
t
WC
t
t
AH
AW
Address
t
t
t
AS
CW1, CW2
CE1
CE2
t
WP
WE
t
t
t
DH
WZ
DW
D
Data Valid
in
D
out
AS7C259-06
5
AS7C259
AS7C259L
DATA RETENTION CHARACTERISTICS
(L Version Only)
Parameter
for Data Retention
Symbol
Test Conditions
= 2.0V
Min
Max
Unit
V
V
2.0
–
–
V
V
CC
DR
CCDR
CDR
R
CC
Data Retention Current
I
150
–
µA
ns
CE1 ≥ V –0.2V or
CC
Chip Deselect to Data Retention Time
Operation Recovery Time
Input Leakage Current
t
t
CE2 ≤ 0.2V
0
t
–
ns
V
≥ V –0.2V or
CC
RC
in
V
≤ 0.2V
| I
|
–
1
µA
in
LI
DATA RETENTION WAVEFORM
(L Version Only)
Data retention mode
DR ≥ 2.0V
V
4.5V
4.5V
V
CC
t
t
R
CDR
V
DR
V
V
IH
CE
IH
AS7C259-07
AC TEST CONDITIONS
– Output load: see Figure B,
Thevenin Equivalent:
except for t
and t
see Figure C.
CLZ
CHZ
168Ω
D
+1.728V
– Input pulse level: GND to 3.0V. See Figure A.
– Input rise and fall times: 5 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
out
+5V
+5V
480Ω
480Ω
D
D
out
out
+3.0V
90%
10%
90%
10%
255Ω
30 pF*
GND
255Ω
5 pF*
GND
*including scope
and jig capacitance
GND
Figure B: Output Load
Figure C: Output Load for t
, t
Figure A: Input Waveform
CLZ CHZ
AS7C259-08
AS7C259-09
AS7C259-10
NOTES
1. During V power-up, a pull-up resistor to V on CE1 is required to meet I specification.
CC
CC
SB
2. This parameter is sampled and not 100% tested.
3. For test conditions, see AC Test Conditions, Figures A, B, C.
4.
t
and t
are specified with CL = 5pF as in Figure C. Transition is measured ±500mV from steady-state voltage.
CHZ
CLZ
5. This parameter is guaranteed but not tested.
6. WE is HIGH for read cycle.
7. CE1 and OE are LOW and CE2 is HIGH for read cycle.
8. Address valid prior to or coincident with CE transition LOW.
9. All read cycle timings are referenced from the last valid address to the first transitioning address.
10. CE1 or WE must be HIGH or CE2 LOW during address transitions.
11. All write cycle timings are referenced from the last valid address to the first transitioning address.
12. CE1 and CE2 have identical timing.
6
AS7C259
AS7C259L
TYPICAL DC AND AC CHARACTERISTICS
Normalized supply current I , I
Normalized supply current I , I
Normalized supply current I
SB1
vs. ambient temperature T
a
CC SB
CC
CC SB
vs. supply voltage V
vs. ambient temperature T
a
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
625
25
I
I
V
= 5.0V
CC
I
CC
SB
CC
5
1
I
SB
0.2
0.04
4.0
4.5
5.0
5.5
–55
–10
35
80
-55
-10
35
80
6.0
6.0
5.0
125
125
5.0
125
Supply voltage (V)
Ambient temperature (°C)
Ambient temperature (°C)
Normalized supply current I
CC
Normalized access time t
Normalized access time t
AA
vs. ambient temperature T
AA
vs. supply voltage V
vs. cycle frequency 1/t , 1/t
RC WC
CC
a
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T = 25°C
V
= 5.0V
V
= 5.0V
CC
a
CC
T = 25°C
a
4.0
4.5
5.0
5.5
–55
–10
35
80
0
25
50
75
100
Supply voltage (V)
Ambient temperature (°C)
Cycle frequency (MHz)
Output source current I
Output sink current I
Typical access time change ∆t
vs. output capacitive loading
OH
OL
AA
vs. output voltage V
vs. output voltage V
OH
OL
140
120
100
80
140
120
100
80
35
30
25
20
15
10
5
V
= 5.0V
V
= 5.0V
V
= 4.5V
CC
CC
CC
T = 25°C
T = 25°C
a
a
60
60
40
40
20
20
0
0.0
0
0.0
0
1.25
2.5
3.75
1.25
2.5
3.75
0
250
500
750
1000
Output voltage (V)
Output voltage (V)
Capacitance (pF)
AS7C259-11
7
AS7C259
AS7C259L
ORDERING CODES
Package / Access Time
Plastic DIP, 300 mil
12 ns
15 ns
20 ns
25 ns
35 ns
AS7C259-12PC
AS7C259L-12PC
AS7C259-15PC
AS7C259L-15PC
AS7C259-20PC
AS7C259L-20PC
AS7C259-25PC
AS7C259L-25PC
AS7C259-35PC
AS7C259L-35PC
AS7C259-12JC
AS7C259L-12JC
AS7C259-15JC
AS7C259L-15JC
AS7C259-20JC
AS7C259L-20JC
AS7C259-25JC
AS7C259L-25JC
AS7C259-35JC
AS7C259L-35JC
Plastic SOJ, 300 mil
Shaded areas contain advance information.
PART NUMBERING SYSTEM
AS7C
256
X
–XX
X
C
SRAM Prefix
Device Number
Blank = Standard Power
= Low Power
Access Time
Package: P = PDIP 300 mil
J = SOJ 300 mil
Commercial Temperature Range, 0°C
to 70 °C
L
T = TSOP 8×14
REPRESENTATIVES, DISTRIBUTORS, AND SALES OFFICES
DOMESTIC REPS
INDIANA
NEW HAMPSHIRE
SOUTH CAROLINA
CANADA
PUERTO RICO
CC Electro Sales
(317) 921-5000
Tech Trek Ltd.
Mississauga:
(905) 238-0366
Concord Component
(919) 846-3441
Micro-Electronic Comp.
(809) 746-9897
Kitchen & Kutchin Inc.
(617) 229-2660
ALABAMA
Concord Component
(205) 772-8883
KANSAS
CenTech
(816) 358-8100
TAIWAN
Asian Specific Tech.
+886-2-521-2363
SOUTH DAKOTA
D. A. Case Associates
(612) 831-6777
NEW JERSEY
North: ERA Associates
(800) 645-5500
Montreal:
(514) 337-7540
ARIZONA
Competitive Technology
(602) 265-9224
Ottawa:
(613) 599-8787
Puteam International
+886-2-729-0373
KENTUCKY
CC Electro Sales
(317) 921-5000
South: Vantage Sales
(609) 424-6777
TENNESSEE
Concord Component
(205) 772-8883
ARKANSAS
Southern States Marketing
(214) 238-7500
Vancouver:
(604) 276-8735
NEW MEXICO
Competitive Technology
(602) 265-9224
LOUISIANA
Southern States Marketing
North: (214) 238-7500
TEXAS
Southern States Marketing
Austin: (512) 835-5822
Dallas: (214) 238-7500
Houston: (713) 868-5180
Calgary:
(403) 291-6866
DISTRIBUTORS
CALIFORNIA
North: Brooks Technical
(415) 960-3880
All-American
Locations Nationwide
Headquarters:
NEW YORK
NYC: ERA Associates
(516) 543-0510
South: (713) 868-5180
EUROPE
Britcomp Sales
Surrey, England
+44-1932 347077
+44-1932 346256
MAINE
Kitchen & Kutchin Inc.
(617) 229-2660
LA Area: Competitive Tech.
(714) 450-0170
(305) 621-8282
Upstate: Tri-Tech
Rochester
(716) 385-6500
UTAH
Charles Fields & Assoc.
(801) 299-8228
San Diego: ATS
(619) 634-1488
Axis Components
Sunnyvale, CA
(408) 522-9595
MARYLAND
Chesapeake Technology
(301) 236-0530
Munich, Germany
+49-894488496
COLORADO
Technology Sales
(303) 792-8835
Birmingham
(607) 722-3580
VERMONT
Kitchen & Kutchin Inc.
(617) 229-2660
Axis Components
Irvine, CA
(714) 459-5510
Athismons, France
+33-1-69387678
MASSACHUSETTS
Kitchen & Kutchin Inc.
(617) 229-2660
Fishkill
(914) 897-5611
CONNECTICUT
Kitchen & Kutchin Inc.
(203) 239-0212
HONG KONG
Eastele Technology
+85-2-798-8860
VIRGINIA
Chesapeake Technology
(301) 236-0530
Future Electronics
Locations Worldwide
Headquarters:
NORTH CAROLINA
Concord Component
(919) 846-3441
MICHIGAN
Enco Group
(810) 338-8600
DELAWARE
Vantage Sales
(609) 424-6777
(514) 594-7710
INDIA
WASHINGTON
ES/Chase
(206) 823-9535
Priya Electronics, Inc.
San Jose, CA USA
(408) 954-1866
Interface Electronics
Hopkinton, MA
(800) 632-7792
(508) 435-0100
NORTH DAKOTA
D. A. Case Associates
(612) 831-6777
MINNESOTA
D. A. Case Associates
(612) 831-6777
FLORIDA
WEST VIRGINIA
Chesapeake Technology
(301) 236-0530
Micro-Electronic Comp.
Deerfield Beach
(305) 426-8944
ISRAEL
Eldis Technology
+972-9-562-666
OHIO
MISSOURI
East: CenTech
(314) 291-4230
Midwest Marketing Assoc.
Lyndhurst: (216) 381-8575
Dayton: (513) 433-2511
WISCONSIN
D. A. Case Associates
(612) 831-6777
Tampa
(813) 393-5011
JAPAN
Actes Engineering
Tokyo
+81-3-3769-3029
SALES OFFICES
West: CenTech
(816) 358-8100
OKLAHOMA
Southern States Marketing
(214) 238-7500
HEADQUARTERS
Alliance Semiconductor
San Jose, CA
GEORGIA
Concord Component
(404) 416-9597
MISSISSIPPI
Concord Component
(205) 772-8883
WYOMING
Technology Sales
(303) 777-9726
Rohm Co. Ltd.
Kyoto
+81-75-311-2121
(408) 383-4900
OREGON
ES/Chase
(503) 684-8500
HAWAII
Brooks Technical
(415) 960-3880
MONTANA
ES/Chase
(503) 684-8500
NORTHEAST AREA
Alliance Semiconductor
Boston, MA
KOREA
FM Korea
+822-575-9720
INTERNATIONAL
PENNSYLVANIA
East: Vantage Sales
(609) 424-6777
IDAHO
ES/Chase
(503) 684-8500
NEBRASKA
CenTech
(816) 358-8100
(617) 239-8127
AUSTRALIA
Woo Young Tech
+822-369-7099
NJS Technology Pty Ltd.
Mulgrave, Victoria
+61-3-562-1244
West: Midwest Marketing
(216) 381-8575
ILLINOIS
North: El-Mech
(312) 794-9100
NEVADA
North: Brooks Technical
(415) 960-3880
TECHNICAL CENTER
TAIWAN
Alliance Semiconductor
+886-2-723-9944
MALAYSIA,
RHODE ISLAND
Kitchen & Kutchin Inc.
(617) 229-2660
R&D Electronics
Dingley, Victoria
+61-3-558-0444
SINGAPORE
Technology Distr. Pte Ltd.
+65-299-7811
South: CenTech
(314) 291-4230
South: Competitive Tech.
(602) 265-9224
Alliance Semiconductor reserves the right to make changes in this data sheet at any time to improve design and supply the best product possible. Alliance Semiconductor cannot
assume responsibility for circuits shown or represent that they are free from patent infringement. Alliance products are not authorized for use as critical components in life
support devices or systems without the express written approval of the president of Alliance. The Alliance logo is a trademark of Alliance Semiconductor Corporation. All other
trademarks are property of their respective holders.
ALLIANCE SEMICONDUCTOR
3099 North First Street San Jose, CA 95134
(408) 383-4900 Fax (408) 383-4999
Printed in U.S.A.
Copyright © 1995 All rights reserved.
December 1995
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