AS7C33128NTF32B-10TQC [ALSC]
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD; 3.3V 128K X 32/36流出液同步SRAM与NTD
| 型号： | AS7C33128NTF32B-10TQC |
| 厂家： | 
ALLIANCE SEMICONDUCTOR CORPORATION |
| 描述： | 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD |
| 文件： | 总18页 (文件大小：417K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2005
AS7C33128NTF32B
AS7C33128NTF36B
®
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
Features
• Multiple chip enables for easy expansion
• 3.3V core power supply
• 2.5V or 3.3V I/O operation with separate V
• Self-timed write cycles
• Interleaved or linear burst modes
• Snooze mode for standby operation
• Organization: 131,072 words × 32 or 36 bits
™
• NTD architecture for efficient bus operation
DDQ
• Fast clock to data access: 7.5/8.0/10.0 ns
• Fast OE access time: 3.5/4.0 ns
• Fully synchronous operation
• Flow-through mode
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Byte write enables
• Clock enable for operation hold
Logic block diagram
17
17
A[16:0]
Q
D
Address
register
Burst logic
CLK
D
Q
CE0
CE1
CE2
Write delay
addr. registers
CLK
17
R/W
BWa
Control
logic
CLK
BWb
BWc
BWd
ADV / LD
LBO
128K x 32/36
SRAM
ZZ
CLK
Array
32/36
32/36
DQ[a,b,c,d]
Data
Input
Register
D
Q
32/36
32/36
CLK
32/36
CLK
CEN
Output
Buffer
OE
32/36
OE
DQ[a,b,c,d]
Selection guide
-75
-80
10
-10
12
Units
ns
Minimum cycle time
8.5
7.5
260
110
30
Maximum clock access time
Maximum operating current
Maximum standby current
8.0
230
100
30
10
ns
200
90
mA
mA
mA
Maximum CMOS standby current (DC)
30
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Alliance Semiconductor
P. 1 of 18
Copyright © Alliance Semiconductor. All rights reserved.
AS7C33128NTF32B/36B
®
4 Mb Synchronous SRAM products list1,2
Org
Part Number
Mode
PL-SCD
PL-SCD
PL-SCD
PL-DCD
PL-DCD
PL-DCD
FT
Speed
256KX18
128KX32
128KX36
256KX18
128KX32
128KX36
256KX18
128KX32
128KX36
256KX18
128KX32
128KX36
256KX18
128KX32
128KX36
AS7C33256PFS18B
AS7C33128PFS32B
AS7C33128PFS36B
AS7C33256PFD18B
AS7C33128PFD32B
AS7C33128PFD36B
AS7C33256FT18B
AS7C33128FT32B
AS7C33128FT36B
AS7C33256NTD18B
AS7C33128NTD32B
AS7C33128NTD36B
AS7C33256NTF18B
AS7C33128NTF32B
AS7C33128NTF36B
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
7.5/8.0/10 ns
FT
7.5/8.0/10 ns
FT
7.5/8.0/10 ns
NTD-PL
NTD-PL
NTD-PL
NTD-FT
NTD-FT
NTD-FT
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
7.5/8.0/10 ns
7.5/8.0/10 ns
7.5/8.0/10 ns
1 Core Power Supply: VDD = 3.3V + 0.165V
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O
VDDQ = 2.5V + 0.125V for 2.5V I/O
PL-SCD
PL-DCD
FT
:
:
:
Pipelined Burst Synchronous SRAM - Single Cycle Deselect
Pipelined Burst Synchronous SRAM - Double Cycle Deselect
Flow-through Burst Synchronous SRAM
1
TM
NTD -PL
:
:
Pipelined Burst Synchronous SRAM with NTD
TM
NTD-FT
Flow-through Burst Synchronous SRAM with NTD
1. NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property
of their respective owners.
4/13/05, v 1.3
Alliance Semiconductor
P. 2 of 18
AS7C33128NTF32B/36B
®
100-pin TQFP - top view
NC/DQPc
DQc0
DQc1
1
2
3
4
5
6
7
8
9
DQPb/NC
DQb7
DQb6
V
DDQ
V
SSQ
DQb5
DQb4
DQb3
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
V
V
DDQ
SSQ
DQc2
DQc3
DQc4
DQc5
DQb2
V
V
10
11
12
SSQ
SSQ
DDQ
V
V
DDQ
DQc6
DQc7
NC
V
DD
NC
TQFP 14 x 20mm
DQb1
DQb0
13
14
15
16
17
18
19
20
21
22
23
24
25
26
V
NC
SS
V
ZZ
DD
V
SS
DQd0
DQd1
DQa7
DQa6
V
V
V
DDQ
DDQ
SSQ
V
SSQ
DQd2
DQd3
DQd4
DQd5
DQa5
DQa4
DQa3
DQa2
V
V
V
DQa1
SSQ
DDQ
SSQ
DDQ
V
27
28
29
30
DQd6
DQd7
NC/DQPd
DQa0
DQPa/NC
Note: For pins 1, 30, 51, and 80, NC applies to the x32 configuration. DQPn applies to the x36
configuration.
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P. 3 of 18
AS7C33128NTF32B/36B
®
Functional Description
The AS7C33128NTF32B/36B family is a high performance CMOS 4 Mbit synchronous Static Random Access Memory
(SRAM) organized as 131,072 words × 32 or 36 bits and incorporates a LATE Write.
™
This variation of the 4Mb+ synchronous SRAM uses the No Turnaround Delay (NTD ) architecture, featuring an enhanced
write operation that improves bandwidth over flowthrough burst devices. In a normal flowthrough burst device, the write data,
command, and address are all applied to the device on the same clock edge. If a read command follows this write command,
the system must wait for one dead cycle for valid data to become available. This dead cycle can significantly reduce overall
bandwidth for applications requiring random access or read-modify-write operations.
™
NTD devices use the memory bus more efficiently by introducing a write latency which matches the one-cycle flow-
through read latency. Write data is applied one cycle after the write command and address, allowing the read pipeline to clear.
™
With NTD , write and read operations can be used in any order without producing dead bus cycles.
Assert R/W low to perform write cycles. Byte write enable controls write access to specific bytes, or can be tied low for full 36
bit writes. Write enable signals, along with the write address, are registered on a rising edge of the clock. Write data is applied
to the device one clock cycle later. Unlike some asynchronous SRAMs, output enable OE does not need to be toggled for write
operations; it can be tied low for normal operations. Outputs go to a high impedance state when the device is de-selected by
any of the three chip enable inputs.
Use the ADV (burst advance) input to perform burst read, write and deselect operations. When ADV is high, external addresses, chip
select, R/W pins are ignored, and internal address counters increment in the count sequence specified by the LBO control. Any
device operations, including burst, can be stalled using the CEN=1, the clock enable input.
The AS7C33128NTF32B/36B operates with a 3.3V ± 5% power supply for the device core (V ). DQ circuits use a separate
DD
power supply (V
) that operates across 2.5V or 3.3V ranges. These devices are available in a 100-pin TQFP package.
DDQ
TQFP Capacitance
Parameter
Input capacitance
I/O capacitance
Symbol
Test conditions
V = 0V
Min
Max
Unit
pF
*
C
-
-
5
7
IN
in
*
C
V = V = 0V
pF
I/O
in
out
*Guranteed not tested
TQFP thermal resistance
Description
Conditions
Symbol
Typical
40
Units
°C/W
°C/W
1–layer
4–layer
θJA
θJA
Thermal resistance
(junction to ambient)1
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA/JESD51
22
Thermal resistance
θJC
8
°C/W
(junction to top of case)1
1 This parameter is sampled
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P. 4 of 18
AS7C33128NTF32B/36B
®
Signal descriptions
Signal
CLK
I/O Properties
Description
I
I
I
CLOCK Clock. All inputs except OE, LBO, and ZZ are synchronous to this clock.
CEN
SYNC
SYNC
SYNC
Clock enable. When de-asserted high, the clock input signal is masked.
Address. Sampled when all chip enables are active and ADV/LD is asserted.
Data. Driven as output when the chip is enabled and OE is active.
A, A0, A1
DQ[a,b,c,d] I/O
CE0, CE1,
CE2
Synchronous chip enables. Sampled at the rising edge of CLK, when ADV/LD is asserted.
Are ignored when ADV/LD is high.
I
SYNC
SYNC
SYNC
SYNC
Advance or Load. When sampled high, the internal burst address counter will increment in
the order defined by the LBO input value. When low, a new address is loaded.
ADV/LD
R/W
I
I
A high during LOAD initiates a READ operation. A low during LOAD initiates a WRITE
operation. Is ignored when ADV/LD is high.
Byte write enables. Used to control write on individual bytes. Sampled along with WRITE
command and BURST WRITE.
BW[a,b,c,d]
OE
I
I
I
ASYNC Asynchronous output enable. I/O pins are not driven when OE is inactive.
Selects Burst mode. When tied to VDD or left floating, device follows interleaved Burst order. When
STATIC
LBO
driven Low, device follows linear Burst order. This signal is internally pulled High.
ZZ
I
-
ASYNC Snooze. Places device in low power mode; data is retained. Connect to GND if unused.
NC
-
No connect
Snooze Mode
SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
SNOOZE MODE is dictated by the length of time the ZZ is in a High state.
The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE.
When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. After entering SNOOZE MODE, all inputs except ZZ
is disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete.
Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting
SNOOZE MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE.
Burst order
Interleaved burst order LBO = 1
A1 A0 A1 A0 A1 A0 A1 A0
Linear burst order LBO = 0
A1 A0 A1 A0 A1 A0 A1 A0
Starting address
First increment
Second increment
Third increment
0 0
0 1
1 0
1 1
0 1
0 0
1 1
1 0
1 0
1 1
0 0
0 1
1 1
1 0
0 1
0 0
Starting Address
First increment
Second increment
Third increment
0 0
0 1
1 0
1 1
0 1
1 0
1 1
0 0
1 0
1 1
0 0
0 1
1 1
0 0
0 1
1 0
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AS7C33128NTF32B/36B
®
Synchronous truth table[5,6,7,8,9,11]
Address
source
CE0 CE1 CE2 ADV/LD R/W
BWn
OE CEN
CLK
Operation
DQ
Notes
H
X
X
X
L
X
X
L
X
H
X
X
L
L
L
L
H
L
H
L
H
L
H
L
X
X
X
X
H
X
H
X
L
X
X
X
X
X
X
X
X
L
X
X
X
X
L
L
L
L
L
L
L
L
L
L
L
L
NA
NA
NA
NA
L to H
L to H
L to H
L to H
DESELECT Cycle
DESELECT Cycle
High-Z
High-Z
High-Z
High-Z
Q
DESELECT Cycle
X
H
X
H
X
H
X
H
CONTINUE DESELECT Cycle
READ Cycle (Begin Burst)
READ Cycle (Continue Burst)
1
External L to H
Next L to H
X
L
X
L
L
Q
1,10
2
H
H
X
X
X
External L to H NOP/DUMMY READ (Begin Burst) High-Z
X
L
X
L
Next L to H DUMMY READ (Continue Burst) High-Z 1,2,10
External L to H
WRITE CYCLE (Begin Burst)
D
D
3
X
L
X
L
X
L
L
Next L to H WRITE CYCLE (Continue Burst)
1,3,10
H
External L to H NOP/WRITE ABORT (Begin Burst) High-Z 2,3
1,2,3,
10
4
X
X
X
H
X
H
X
L
Next L to H WRITE ABORT (Continue Burst)
High-Z
-
X
X
X
X
X
X
X
H
Current L to H
INHIBIT CLOCK
Key: X = Don’t Care, H = HIGH, L = LOW. BWn = H means all byte write signals (BWa, BWb, BWc, and BWd) are HIGH. BWn = L means one or more byte write signals are
LOW.
Notes:
1 CONTINUE BURST cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or WRITE) is chosen in the initial BEGIN BURST
cycle. A CONINUE DESELECT cycle can only be entered if a DESELECT CYCLE is executed first.
2 DUMMY READ and WRITE ABORT cycles can be considered NOPs because the device performs no external operation. A WRITE ABORT means a WRITE command is given,
but no operation is performed.
3 OE may be wired LOW to minimize the number of control signal to the SRAM. The device will automatically turn off the output drivers during a WRITE cycle. OE may be used
when the bus turn-on and turn-off times do not meet an application’s requirements.
4 If an INHIBIT CLOCK command occurs during a READ operation, the DQ bus will remain active (Low-Z). If it occurs during a WRITE cycle, the bus will remain in High-Z. No
WRITE operations will be performed during the INHIBIT CLOCK cycle.
5 BWa enables WRITEs to byte “a” (DQa pins); BWb enables WRITEs to byte “b” (DQb pins); BWc enables WRITEs to byte “c” (DQc pins); BWd enables WRITEs to byte “d”
(DQd pins).
6 All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
7 Wait states are inserted by setting CEN HIGH.
8 This device contains circuitry that will ensure that the outputs will be in High-Z during power-up.
9 The device incorporates a 2-bit burst counter. Address wraps to the initial address every fourth BURST CYCLE.
10 The address counter is incremented for all CONTINUE BURST cycles.
11 ZZ pin is always Low.
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AS7C33128NTF32B/36B
®
State diagram for NTD SRAM
Burst
Read
Burs
Read
Burst
Dsel
Read
Dsel
Burst
Burst
Write
Burst
Burst
Write
Writ
Absolute maximum ratings
Parameter
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
Symbol
DD, VDDQ
VIN
Min
–0.5
–0.5
–0.5
–
Max
+4.6
Unit
V
V
VDD + 0.5
VDDQ + 0.5
1.8
V
VIN
V
Pd
W
Short circuit output current
IOUT
Tstg
–
20
mA
oC
oC
Storage temperature
–65
–65
+150
Temperature under bias
Tbias
+135
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
Min
3.135
3.135
0
Nominal
Max
3.465
VDD
0
Unit
V
VDD
3.3
3.3
0
*
VDDQ
V
Vss
V
*
VDDQ cannot be greater than VDD
Recommended operating conditions at 2.5V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
Min
3.135
2.375
0
Nominal
Max
3.465
VDD
0
Unit
V
VDD
3.3
2.5
0
*
VDDQ
V
Vss
V
*
VDDQ cannot be greater than VDD
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AS7C33128NTF32B/36B
®
DC electrical characteristics for 3.3V I/O operation
Parameter
Input leakage current†
Output leakage current
Sym
Conditions
Min
-2
Max
Unit
µA
|ILI|
VDD = Max, 0V < VIN < VDD
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
Address and control pins
I/O pins
2
2
|ILO
|
-2
µA
2*
VDD+0.3
Input high (logic 1) voltage
Input low (logic 0) voltage
VIH
VIL
V
V
2*
V
DDQ+0.3
Address and control pins
I/O pins
-0.3**
-0.5**
2.4
0.8
0.8
–
Output high voltage
Output low voltage
VOH
VOL
IOH = –4 mA, VDDQ = 3.135V
IOL = 8 mA, VDDQ = 3.465V
V
V
–
0.4
DC electrical characteristics for 2.5V I/O operation
Parameter
Input leakage current†
Output leakage current
Sym
Conditions
Min
-2
Max
Unit
µA
µA
V
|ILI|
VDD = Max, 0V < VIN < VDD
2
2
|ILO
|
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
Address and control pins
I/O pins
-2
1.7*
1.7*
-0.3**
-0.3**
1.7
VDD+0.3
Input high (logic 1) voltage
Input low (logic 0) voltage
Output high voltage
VIH
VIL
V
DDQ+0.3
V
Address and control pins
I/O pins
0.7
0.7
–
V
V
IOH = –4 mA, VDDQ = 2.375V
VOH
VOL
V
V
I
OH = –1 mA, VDDQ = 2.375V
2.0
–
IOL = 8 mA, VDDQ = 2.625V
–
0.7
0.4
Output low voltage
I
OL = 1 mA, VDDQ = 2.625V
–
† LBO pin has an internal pull-up and input leakage = -10 µA.
*
V
max < VDD +1.5V for pulse width less than 0.2 X t
CYC
IH
**
V
min = -1.5 for pulse width less than 0.2 X t
CYC
IL
IDD operating conditions and maximum limits
Parameter
Sym
Conditions
-75
-80
-10
Unit
CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax
,
Operating power supply current1
ICC
260
230
200
mA
IOUT = 0 mA, ZZ < VIL
All VIN ≤ 0.2V or >
V
– 0.2V, Deselected,
DD
ISB
110
100
90
f = fMax, ZZ < VIL
Deselected, f = 0, ZZ < 0.2V,
all VIN ≤ 0.2V or ≥ VDD – 0.2V
Standby power supply current
mA
ISB1
ISB2
30
30
30
30
30
30
Deselected, f = f , ZZ
≥
V
– 0.2V,
Max
DD
all VIN ≤ VIL or ≥ VIH
1 I given with no output loading. I increases with faster cycle times and greater output loading.
CC
CC
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AS7C33128NTF32B/36B
®
Timing characteristics over operating range
-75
-80
-10
1
Parameter
Sym
Min
8.5
–
Max
–
Min
10
–
Max
–
Min
12
–
Max
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Cycle time
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CYC
Clock access time
7.5
3.5
–
8.0
4.0
–
10
4.0
–
CD
–
–
–
Output enable low to data valid
Clock high to output low Z
Data Output invalid from clock high
Output enable low to output low Z
Output enable high to output high Z
Clock high to output high Z
Clock high pulse width
OE
2.5
2.5
0
2.5
2.5
0
2.5
2.5
0
2,3,4
2
LZC
OH
–
–
–
–
–
–
2,3,4
2,3,4
2,3,4
5
LZOE
HZOE
HZC
CH
–
3.5
3.5
–
–
4.0
4.0
–
–
4.0
4.0
–
–
–
–
3.0
3.0
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
2.0
0.5
2.0
0.5
4.0
4.0
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
2.0
0.5
2.0
0.5
4.0
4.0
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
2.0
0.5
2.0
0.5
Clock low pulse width
–
–
–
5
CL
–
–
–
Address and Control setup to clock high
Data setup to clock high
6
AS
–
–
–
6
DS
Write setup to clock high
–
–
–
6, 7
6, 8
6
WS
–
–
–
Chip select setup to clock high
Address hold from clock high
Data hold from clock high
CSS
AH
–
–
–
–
–
–
6
DH
–
–
–
Write hold from clock high
Chip select hold from clock high
Clock enable setup to clock high
Clock enable hold from clock high
ADV setup to clock high
6, 7
6, 8
6
WH
–
–
–
CSH
CENS
CENH
ADVS
ADVH
–
–
–
–
–
–
6
–
–
–
6
ADV hold from clock high
–
–
–
6
1 See “Notes” on page 15.
Snooze Mode Electrical Characteristics
Description
Conditions
ZZ > V
Symbol
Min
Max
Units
mA
Current during Snooze Mode
ZZ active to input ignored
I
30
IH
SB2
PDS
PUS
t
t
2
2
cycle
cycle
cycle
cycle
ZZ inactive to input sampled
ZZ active to SNOOZE current
ZZ inactive to exit SNOOZE current
t
2
ZZI
t
0
RZZI
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®
Key to switching waveforms
don’t care
Undefined
Rising input
Falling input
Timing waveform of read cycle
tCH tCL
tCYC
CLK
tCENH
tCENS
CEN
tAS
tAH
A1
A2
A3
Address
R/W
tWS tWH
tCSS tCSH
CE0,CE2
CE1
tADVS
tADVH
ADV/LD
OE
tHZOE
tOE
tLZOE
Q(A2Y‘11)
Q(A3)
Q(A1)
Q(A2)
Dout
Q(A3Y‘01)
Q(A2Y‘01) Q(A2Y‘10)
BURST
READ
Q(A2Ý11)
BURST
READ
Q(A2Ý01)
READ
Q(A1)
DSEL
READ
Q(A2)
STALL
READ BURST
BURST
Command
Q(A3)
READ
READ
Q(A2Ý10)
Q(A3Ý01)
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Timing waveform of write cycle
tCH tCL
tCYC
CLK
tCENS tCENH
CEN
tAS
tAH
A1
A2
A3
Address
R/W
BWn
tCSS
tCSH
CE0,CE2
CE1
tADVS
tADVH
ADV/LD
OE
tDS
tDH
D(A3)
D(A1)
D(A2)
Din
tHZOE
D(A2Y‘10)
D(A2Y‘11)
D(A3Y‘01)
D(A2Y‘01)
Dout
Q(n-1)
BURST
WRITE
D(A2Ý10) D(A2Ý11)
BURST
WRITE
BURST
WRITE
D(A2Ý01)
WRITE
D(A1)
DSEL
WRITE
D(A2)
STALL
WRITE
D(A3)
BURST
WRITE
D(A3Ý01)
Command
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Timing waveform of read/write cycle
tCH tCL
tCYC
CLK
tCENS
tCENH
CEN
tAS
tAH
A3
A4
A5
A6
A7
A1
A2
ADDRESS
tWS
tWH
R/W
tWH
tWS
BWn
tCSH
tCSS
CE0, CE2
CE1
tADVH
tADVS
ADV/LD
OE
tCD
tLZC
tHZOE
tOE
tDS tDH
tOH
tHZC
D(A5)
Q(A6)
D(A7)
D(A1)
D(A2)
Q(A3)
Q(A4)
Q(A4
Ý
01
)
D(A2Ý01)
D/Q
tLZOE
BURST
WRITE
BURST
READ
READ
Q(A3)
DSEL
WRITE
D(A1)
WRITE
D(A2)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
READ
Q(A4)
Command
D(A2Ý01)
Q(A4Ý01)
Note: Ý = XOR when LBO = high/no connect. Ý = ADD when LBO = low.
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NOP, stall and deselect cycles
CLK
CEN
CE1
CE0, CE2
ADV/LD
R/W
BWn
A1
A2
A3
Address
Q(A1Ý
10)
D(A2)
Q(A1)
Q(A1Ý01)
D/Q
BURST
NOP
WRITE
NOP
READ
Q(A1)
STALL
DSEL
BURST
Q(A1 01
BURST
Q(A1 10)
BURST WRITE
BURST
D(A2Ý10)
Command
Ý
)
Ý
DSEL
D(A2)
D(A2
Ý01
)
D(A3)
Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low. OE is low.
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Timing waveform of snooze mode
CLK
tPUS
ZZ recovery cycle
ZZ setup cycle
ZZ
tZZI
Isupply
ISB2
tRZZI
All inputs
Deselect or Read Only
(except ZZ)
Deselect or Read Only
Normal
operation
Cycle
High-Z
Dout
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AC test conditions
• Output load: For tLZC, tLZOE, tHZOE, and tHZC, see Figure C. For all others, see Figure B.
• Input pulse level: GND to 3V. See Figure A.
Thevenin equivalent:
• Input rise and fall time (measured at 0.3V and 2.7V): 1.0V/ns. See Figure A.
• Input and output timing reference levels: 1.5V
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
319
Ω
/1667
Ω
50
Ω
DOUT
353 /1538
+3.0V
VL = 1.5V
for 3.3V I/O;
= VDDQ/2
DOUT
5 pF*
90%
10%
GND
Figure A: Input waveform
90%
Ω
Ω
30 pF*
10%
GND
*including scope
and jig capacitance
for 2.5V I/O
Figure B: Output load (A)
Figure C: Output load(B)
Notes
1) For test conditions, see “AC test conditions”, Figures A, B, and C
2) This parameter measured with output load condition in Figure C.
3) This parameter is sampled, but not 100% tested.
4) tHZOE is less than tLZOE, and tHZC is less than tLZC at any given temperature and voltage.
5) tCH is measured high above VIH, and tCL is measured low below VIL
6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled.
7) Write refers to R/
W
and BW[a,b,c,d]
.
8) Chip select refers to CE0
,
CE1, and CE2.
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Package dimensions
100-pin quad flat pack (TQFP)
Hd
D
TQFP
Min
A1 0.05
A2 1.35
Max
0.15
b
e
1.45
b
c
0.22
0.09
0.38
0.20
D
E
e
13.90
19.90
14.10
20.10
He
E
0.65 nominal
Hd 15.90
He 21.90
16.10
22.10
0.75
L
L1
a
0.45
1.00 nominal
0° 7°
α
Dimensions in
millimeters
c
L1
L
A1 A2
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Ordering information
Package Width
-75
–80
–10
TQFP
TQFP
TQFP
TQFP
x32
x32
x36
x36
AS7C33128NTF32B-75TQC
AS7C33128NTF32B-75TQI
AS7C33128NTF36B-75TQC
AS7C33128NTF36B-75TQI
AS7C33128NTF32B-80TQC
AS7C33128NTF32B-80TQI
AS7C33128NTF36B-80TQC
AS7C33128NTF36B-80TQI
AS7C33128NTF32B-10TQC
AS7C33128NTF32B-10TQI
AS7C33128NTF36B-80TQC
AS7C33128NTF36B-10TQI
Notes: Add suffix ‘N’ to the above part number for Lead Free Parts (Ex. AS7C33128NTF32B-75TQCN)
Part numbering guide
AS7C
33
128
NTF
32/36
B
–XX
TQ
C/I
X
1
2
3
4
5
6
7
8
9
10
1. Alliance Semiconductor SRAM prefix
2. Operating voltage: 33 = 3.3V
3. Organization: 128 = 128k
4. NTF= No Turn-Around Delay, Flow-through mode
5. Organization: 32 = x32, 36 = x36
6. Production version: B = Product revision
7. Clock access time: [ -75 = 7.5 ns; -80 = 8.0 ns; -10 = 10.0]
8. Package type: TQ = TQFP
9. Operating temperature: C = commercial (0° C to 70° C); I = industrial (-40° C to 85° C)
10. N = Lead free part
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P. 17 of 18
AS7C33128NTF32B/36B
®
®
Alliance Semiconductor Corporation
2575, Augustine Drive,
Santa Clara, CA 95054
Tel: 408 - 855 - 4900
Copyright © Alliance Semiconductor
All Rights Reserved
Part Number: AS7C33128NTF32B
AS7C33128NTF36B
Fax: 408 - 855 - 4999
www.alsc.com
Document Version: v 1.3
© Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered
trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make
changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this
document. The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or
correct this data at any time, without notice. If the product described herein is under development, significant changes to these specifications are
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agrees to indemnify Alliance against all claims arising from such use.
相关型号：
AS7C33128NTF32B-75TQCN
ZBT SRAM, 128KX32, 7.5ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100
ISSI
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