AS7C34096-20TI [ALSC]

5V/3.3V 512K X8 CMOS SRAM; 5V / 3.3V 512K X8 CMOS SRAM
AS7C34096-20TI
型号: AS7C34096-20TI
厂家: ALLIANCE SEMICONDUCTOR CORPORATION    ALLIANCE SEMICONDUCTOR CORPORATION
描述:

5V/3.3V 512K X8 CMOS SRAM
5V / 3.3V 512K X8 CMOS SRAM

静态存储器
文件: 总9页 (文件大小:247K)
中文:  中文翻译
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January 2005  
AS7C4096  
AS7C34096  
®
5V/3.3V 512K × 8 CMOS SRAM  
Features  
• AS7C4096 (5V version)  
• Low power consumption: STANDBY  
- 110 mW (AS7C4096) / max CMOS  
- 72 mW (AS7C34096) / max CMOS  
• Equal access and cycle times  
• AS7C34096 (3.3V version)  
• Industrial and commercial temperature  
• Organization: 524,288 words × 8 bits  
• Center power and ground pins  
• High speed  
- 10/12/15/20 ns address access time  
- 5/6/7/8 ns output enable access time  
• Low power consumption: ACTIVE  
- 1375 mW (AS7C4096) / max @ 12 ns  
- 576 mW (AS7C34096) / max @ 10 ns  
• Easy memory expansion with CE  
• TTL-compatible, three-state I/O  
• JEDEC standard packages  
- 400 mil 36-pin SOJ  
, OE inputs  
- 44-pin TSOP 2  
• ESD protection 2000 volts  
• Latch-up current 100 mA  
Logic block diagram  
Pin arrangements  
VCC  
36-pin SOJ (400 mil)  
44-pin TSOP 2  
GND  
Input buffer  
NC  
NC  
A0  
A1  
A2  
A3  
A4  
CE  
NC  
NC  
NC  
A18  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A0  
A1  
A2  
A3  
A4  
CE  
1
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
NC  
2
2
A18  
A17  
A16  
A15  
OE  
3
A0  
A1  
A2  
3
4
4
I/O1  
I/O8  
A17  
A16  
A15  
OE  
5
5
6
524,288 × 8  
A3  
6
7
I/O1  
I/O2  
VCC  
7
I/O8  
A4  
8
Array  
(4,194,304)  
8
I/O7  
GND  
VCC  
I/O1  
I/O2  
VCC  
I/O8  
I/O7  
9
A5  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
A6  
A7  
A8  
A9  
GND  
I/O3  
I/O4  
WE  
A5  
10  
11  
12  
13  
14  
15  
16  
17  
18  
GND  
I/O6  
I/O5  
A14  
A13  
A12  
A11  
A10  
NC  
VCC  
GND  
I/O3  
I/O4  
WE  
A5  
I/O6  
I/O5  
A14  
A13  
A12  
A11  
A10  
NC  
A6  
Column decoder  
WE  
OE  
CE  
A7  
A6  
Control  
Circuit  
A8  
A7  
A9  
A8  
A9  
NC  
NC  
NC  
NC  
Selection guide  
–10  
10  
5
–12  
12  
–15  
15  
–20  
Unit  
ns  
Maximum address access time  
20  
8
Maximum outputenable access time  
6
7
ns  
AS7C4096  
AS7C34096  
AS7C4096  
AS7C34096  
250  
130  
20  
220  
110  
20  
180  
100  
20  
mA  
mA  
mA  
mA  
Maximum operating current  
160  
Maximum CMOS standby current  
20  
20  
20  
20  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 1 of 9  
Copyright © Alliance Semiconductor. All rights reserved.  
AS7C4096  
AS7C34096  
®
Functional description  
The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices  
organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple  
interfacing are desired.  
Equal address access and cycle times (t , t , t ) of 10/12/15/20 ns with output enable access times (t ) of 5/6/7/8 ns are  
AA RC WC  
OE  
ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank  
memory systems.  
When CE is high the device enters standby mode. The AS7C4096/AS7C34096 is guaranteed not to exceed 110/72 mW power  
consumption in CMOS standby mode.  
A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O8 is  
written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/  
O pins only after outputs have been disabled with output enable (OE) or write enable (WE).  
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip  
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or  
write enable is active, output drivers stay in high-impedance mode.  
All chip inputs and outputs are TTL-compatible, and operation is from either a single 5V(AS7C4096) or 3.3V(AS7C34096)  
supply. Both devices are available in the JEDEC standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages.  
Absolute maximum ratings  
Parameter  
Device  
Symbol  
Min  
–1  
Max  
+7.0  
+5.0  
Unit  
V
AS7C4096  
AS7C34096  
V
V
V
t1  
t1  
t2  
D
Voltage on V relative to GND  
CC  
–0.5  
–0.5  
V
Voltage on any pin relative to GND  
Power dissipation  
V
+0.5  
V
CC  
P
T
1.0  
W
Storage temperature  
–65  
–55  
+150  
+125  
20  
°C  
°C  
mA  
stg  
bias  
Temperature with V applied  
T
CC  
DC current unto output (low)  
I
OUT  
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func-  
tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to  
absolute maximum rating conditions for extended periods may affect reliability.  
Truth table  
CE  
H
L
WE  
X
OE  
X
Data  
Mode  
Standby (I , I  
High Z  
High Z  
)
SB SB1  
H
H
Output disable (I  
)
CC  
L
H
L
D
Read (I  
)
CC  
OUT  
L
L
X
D
Write (I  
)
IN  
CC  
Key: X = Don’t care, L = Low, H = High  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 2 of 9  
AS7C4096  
AS7C34096  
®
Recommended operating condition  
Parameter  
Device  
Symbol  
Min  
4.5  
3.15  
3.0  
2.2  
2.0  
–0.5  
0
Nominal  
Max  
5.5  
Unit  
V
AS7C4096  
AS7C34096  
AS7C34096  
AS7C4096  
AS7C34096  
V
V
(12/15/20)  
5.0  
3.30  
3.3  
CC  
Supply voltage  
V
(10)  
3.6  
V
CC  
(12/15/20)  
3.6  
V
CC  
V
V
V
V
+ 0.5  
V
IH  
CC  
Input voltage  
+ 0.5  
V
IH  
1
CC  
V
0.8  
V
IL  
commercial  
industrial  
T
70  
85  
°C  
°C  
Ambient operating  
temperature  
A
T
–40  
A
1 VIL min = –1.0V for pulse width less than 5ns.  
DC operating characteristics (over the operating range)1  
–10  
–12  
–15  
–20  
Parameter Symbol  
Test conditions  
Device  
Min Max Min Max Min Max Min Max Unit  
AS7C4096/  
Input leakage  
|I |  
V
= Max, V = GND to V  
1
1
1
1
1
1
1
1
µA  
µA  
LI  
CC  
IN  
CC  
current  
AS7C34096  
AS7C4096/  
AS7C34096  
AS7C4096  
Output  
leakage  
current  
V
= Max, CE = V  
IH  
CC  
|I  
|
LO  
CC  
V
= GND to V  
OUT  
CC  
Operating  
power supply  
current  
250  
130  
220  
110  
180 mA  
100  
V
= Max, CE < V  
IL  
CC  
I
f = f , I  
= 0mA  
AS7C34096  
160  
Max OUT  
AS7C4096  
AS7C34096  
AS7C4096  
60  
60  
60  
20  
60  
60  
20  
60  
V
= Max, CE = V  
IH  
CC  
I
mA  
60  
SB  
f = f , I  
= 0mA  
Standby  
power supply  
current  
Max OUT  
V
= Max,  
20  
CC  
I
CE V – 0.2V, V 0.2V or V  
mA  
SB1  
CC  
IN  
IN  
AS7C34096  
20  
20  
20  
20  
V – 0.2V, f = 0  
CC  
V
V
I
= 8 mA, V = Min  
AS7C4096/  
AS7C34096  
0.4  
0.4  
0.4  
0.4  
V
V
Output  
voltage  
OL  
OL  
CC  
I
= –4 mA, V = Min  
2.4  
2.4  
2.4  
2.4  
OH  
OH  
CC  
Capacitance (f = 1MHz, T = 25° C, V = NOMINAL)2  
A
CC  
Parameter  
Input capacitance  
I/O capacitance  
Symbol  
Signals  
Test conditions  
= 0V  
Max  
Unit  
C
A, CE, WE, OE  
I/O  
V
5
7
pF  
pF  
IN  
IN  
C
V
= V  
= 0V  
OUT  
I/O  
IN  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 3 of 9  
AS7C4096  
AS7C34096  
®
Read cycle (over the operating range)3,9  
–10  
–12  
–15  
–20  
Symbo  
l
Parameter  
Read cycle time  
Min  
10  
Max  
Min  
12  
Max  
Min  
15  
Max  
Min  
20  
Max Unit Notes  
t
20  
20  
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
RC  
AA  
Address access time  
t
10  
10  
5
12  
12  
6
15  
15  
7
3
3
Chip enable (CE) access time  
Output enable (OE) access time  
Output hold from address change  
CE Low to output in low Z  
CE High to output in high Z  
OE Low to output in low Z  
OE High to output in high Z  
Power up time  
t
ACE  
t
OE  
OH  
t
3
3
3
3
5
t
3
3
0
0
4, 5  
4, 5  
4, 5  
4, 5  
4, 5  
4, 5  
CLZ  
t
5
6
7
9
CHZ  
t
0
0
0
0
OLZ  
OHZ  
t
5
6
7
9
t
t
0
0
0
0
PU  
PD  
Power down time  
10  
12  
15  
20  
Key to switching waveforms  
Rising input  
Falling input  
Undefined/don’t care  
Read waveform 1 (address controlled)3,6,7,9  
tRC  
Address  
tAA  
tOH  
DOUT  
Data valid  
Read waveform 2 (CE, OE controlled)3,6,8,9  
tRC1  
CE  
tOE  
OE  
tOLZ  
tOHZ  
tCHZ  
tACE  
DOUT  
Data valid  
tCLZ  
tPD  
50%  
ICC  
ISB  
tPU  
Supply  
current  
50%  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 4 of 9  
AS7C4096  
AS7C34096  
®
Write cycle (over the operating range)11  
–10  
–12  
–15  
–20  
Parameter  
Write cycle time  
Symbol Min  
Max  
Min  
12  
8
Max  
Min  
15  
10  
10  
0
Max  
Min  
20  
12  
12  
0
Max Unit Notes  
t
t
t
10  
7
9
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
WC  
CW  
AW  
Chip enable (CE) to write end  
Address setup to write end  
Address setup time  
7
8
t
0
0
AS  
Write pulse width (OE = high)  
Write pulse width (OE = low  
Address hold from end of write  
Write recovery time  
t
t
7
8
10  
15  
0
12  
20  
0
WP1  
WP2  
10  
0
12  
0
t
AH  
WR  
DW  
t
0
0
0
0
Data valid to write end  
t
5
6
7
9
Data hold time  
t
0
0
0
0
4, 5  
4, 5  
4, 5  
DH  
WZ  
OW  
Write enable to output in high Z  
Output active from write end  
t
0
5
0
6
0
7
0
t
3
3
3
3
Write waveform 1 (WE controlled)10,11  
tWC  
tAW  
tWR  
tAH  
Address  
tWP  
WE  
tAS  
tDW  
Data valid  
tDH  
DIN  
tWZ  
tOW  
DOUT  
Write waveform 2 (CE controlled)10,11  
tWC  
tWR  
tAH  
tAW  
Address  
tAS  
tCW  
CE  
tWP  
WE  
tWZ  
tDW  
tDH  
DIN  
Data valid  
DOUT  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 5 of 9  
AS7C4096  
AS7C34096  
®
AC test conditions  
- Output load: see Figure B or Figure C.  
Thevenin equivalent:  
168  
- Input pulse level: GND to 3.0V. See Figures A, B, and C.  
- Input rise and fall times: 2 ns. See Figure A.  
- Input and output timing reference levels: 1.5V.  
DOUT  
+1.728V  
+3.3V  
+5V  
480  
320  
+3.0V  
GND  
DOUT  
255  
DOUT  
350Ω  
90%  
10%  
90%  
10%  
C13  
C13  
2 ns  
Figure A: Input pulse  
GND  
GND  
Figure C: 3.3V Output load  
Figure B: 5V Output load  
Notes  
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.  
This parameter is sampled, but not 100% tested.  
For test conditions, see AC Test Conditions.  
t
CLZ and tCHZ are specified with CL = 5pF as in Figure C. Transition is measured ±500 mV from steady-state voltage.  
This parameter is guaranteed, but not tested.  
WE is HIGH for read cycle.  
CE and OE are LOW for read cycle.  
Address valid prior to or coincident with CE transition Low.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
10 CE or WE must be HIGH during address transitions. Either CE or WE asserting high terminates a write cycle.  
11 All write cycle timings are referenced from the last valid address to the first transitioning address.  
12 Not applicable.  
13 C = 30pF, except at high Z and low Z parameters, where C = 5pF.  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 6 of 9  
AS7C4096  
AS7C34096  
®
Typical DC and AC characteristics 12  
Normalized supply current ICC, ISB  
vs. supply voltage VCC  
Normalized supply current ICC, ISB  
vs. ambient temperature Ta  
Normalized supply current ISB1  
vs. ambient temperature Ta  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
625  
25  
ICC  
ICC  
VCC = VCC(NOMINAL)  
5
1
ISB  
ISB  
0.2  
0.04  
MIN  
NOMINAL  
–55  
–10  
35  
80  
125  
125  
VCC  
–55  
–10  
Ambient temperature (  
Normalized supply current ICC  
35  
80  
MAX  
125  
Supply voltage (V)  
Ambient temperature (  
°
C)  
°C)  
Normalized access time tAA  
vs. supply voltage VCC  
Normalized access time tAA  
vs. ambient temperature Ta  
vs. cycle frequency 1/tRC, 1/tWC  
VCC = VCC(NOMINAL)  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VCC = VCC(NOMINAL)  
Ta = 25° C  
Ta = 25° C  
MIN  
NOMINAL  
–55  
–10  
35  
80  
0
25  
Cycle frequency (MHz)  
Typical access time change ∆  
50  
75  
MAX  
100  
Supply voltage (V)  
Ambient temperature (°C)  
Output source current IOH  
vs. output voltage VOH  
Output sink current IOL  
vs. output voltage VOL  
tAA  
vs. output capacitive loading  
140  
120  
100  
80  
140  
120  
100  
80  
35  
30  
25  
20  
15  
10  
5
VCC = VCC(NOMINAL)  
VCC = VCC(NOMINAL)  
VCC = VCC(NOMINAL)  
Ta = 25  
°
C
Ta = 25° C  
60  
60  
40  
40  
20  
20  
0
0
0
0
0
0
250  
500  
750  
1000  
VCC  
Output voltage (V)  
Output voltage (V)  
Capacitance (pF)  
1/13/05; v.1.9  
Alliance Semiconductor  
P. 7 of 9  
AS7C4096  
AS7C34096  
®
Package dimensions  
c
44 434241403938373635343332313029282726252423  
44-pin TSOP 2  
Min (mm) Max (mm)  
A
1.2  
He  
e
44-pin TSOP 2  
A
0.05  
0.95  
0.15  
1.05  
1
A
2
b
c
0.30  
0.45  
1 2 3 4 5 6 7 8 9 101112131415161718 19202122  
d
0.21  
0.12  
d
18.31  
10.06  
11.68  
18.52  
10.26  
11.94  
e
H
l
A2  
e
A
0–5°  
E
l
0.80 (typical)  
A1  
0.40  
0.60  
E
b
36-pin SOJ 400  
Min(mm)  
Max(mm)  
0.148  
A
.128  
0.025  
0.105  
0.015  
0.026  
0.007  
.920  
A
A
1
0.115  
0.020  
0.032  
0.013  
.930  
2
D
e
b
b
b
1
E1E2  
A
36-pin SOJ  
c
D
A1  
Seating  
Plane  
b1  
e
0.045  
0.395  
0.435  
0.055  
0.405  
Pin 1  
c
E1  
E2  
E
A2  
0.445  
0.370 BSC  
E
1/13/05; v.1.9  
Alliance Semiconductor  
P. 8 of 9  
AS7C4096  
AS7C34096  
®
Ordering codes  
Package  
Version  
10 ns  
12 ns  
15 ns  
20 ns  
5V commercial  
5V industrial  
NA  
AS7C4096-12JC  
AS7C4096-12JI  
AS7C34096-12JC  
AS7C34096-12JI  
AS7C4096-12TC  
AS7C4096-12TI  
AS7C34096-12TC  
AS7C34096-12TI  
AS7C4096-15JC  
AS7C4096-15JI  
AS7C34096-15JC  
AS7C34096-15JI  
AS7C4096-15TC  
AS7C4096-15TI  
AS7C34096-15TC  
AS7C34096-15TI  
AS7C4096-20JC  
AS7C4096-20JI  
AS7C34096-20JC  
AS7C34096-20JI  
AS7C4096-20TC  
AS7C4096-20TI  
AS7C34096-20TC  
AS7C34096-20TI  
NA  
SOJ  
3.3V commercial  
3.3V industrial  
5V commercial  
5V industrial  
AS7C34096-10JC  
NA  
NA  
NA  
AS7C34096-10TC  
NA  
TSOP 2  
Note:  
3.3V commercial  
3.3V industrial  
Add suffix “N” to the above part number for lead free devices, Ex. AS7C4096-12JCN  
Part numbering system  
AS7C  
X
4096  
–XX  
J or T  
X
N
Voltage:  
Packages:  
Temperature ranges:  
Device Access  
number time  
SRAM prefix Blank: 5V CMOS  
3: 3.3V CMOS  
J: SOJ 400 mil C: Commercial, 0°C to 70°C Lead free device  
T: TSOP 2 I: Industrial, –40°C to 85°C  
1/13/05; v.1.9  
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