AS7C512-35SC [ALSC]
Standard SRAM, 64KX8, 35ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOIC-32;
| 型号： | AS7C512-35SC |
| 厂家： | 
ALLIANCE SEMICONDUCTOR CORPORATION |
| 描述： | Standard SRAM, 64KX8, 35ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOIC-32 静态存储器 光电二极管 内存集成电路 |
| 文件： | 总8页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Performance
64K×8
AS7C512
AS7C512L
CMOS SRAM
®
64K×8 CMOS SRAM
Features
• Easy memory expansion with CE1, CE2, OE inputs
• Organization: 65,536 words × 8 bits
• TTL-compatible, three-state I/O
- 32-pin JEDEC standard packages
- 300 mil PDIP and SOJ
Socket compatible with 7C256 and 7C1024
- 525 mil SOIC
• High speed
- 12/15/20/25/35 ns address access time
- 3/4/5/6/8 ns output enable access time
• Low power consumption
- Active: 688 mW max (12 ns cycle)
- Standby:27.5 mW max, CMOS I/O
4.25 mW max, CMOS I/O, L version
- Very low DC component in active power
• 2.0V data retention (L version)
• Equal access and cycle times
• ESD protection > 2000 volts
• Latch-up current > 200 mA
Logic block diagram
Pin arrangement
TSOP 8×20
DIP, SOJ, SOIC
Vcc
GND
NC
NC
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
Input buffer
A0
A1
A2
A3
A4
A5
A6
A7
I/O7
I/O0
256×256×8
Array
(524,288)
9
10
11
12
13
14
15
16
WE
OE
Column decoder
Control
circuit
CE1
CE2
A
8
A A A A A A A
9 10 11 12 13 14 15
Selection guide
7C512-12 7C512-15 7C512-20 7C512-25 7C512-35
Unit
ns
Maximum address access time
Maximum output enable access time
Maximum operating current
12
3
15
4
20
5
25
6
35
8
ns
125
5.0
0.75
115
5.0
0.75
105
5.0
0.75
95
80
mA
mA
mA
5.0
0.75
5.0
0.75
Maximum CMOS standby current
L
ALLIANCE SEMICONDUCTOR
AS7C512
Functional description
The AS7C512 is a high performance CMOS 524,288-bit Static Random Access Memory (SRAM) organized as 65,536 words × 8 bits. It is
designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (t , t , t ) of 12/15/20/25/35 ns with output enable access times (t ) of 3/4/5/6/8 ns are ideal
AA RC WC
OE
for high performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank
memory systems.
When CE1 is HIGH or CE2 is LOW the device enters standby mode. The standard AS7C512 is guaranteed not to exceed 27.5 mW power
consumption in standby mode; the L version is guaranteed not to exceed 4.25 mW, and typically requires only 800 µW. The L version also
offers 2.0V data retention, with maximum power of 400 µW.
A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/O0-I/O7 is written
on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To avoid bus contention, external
devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE) HIGH. The chip
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is
active, output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5V supply. The AS7C512 is packaged in all high volume
industry standard packages.
Absolute maximum ratings
Parameter
Symbol
Min
–0.5
–
Max
Unit
V
Voltage on any pin relative to GND
Power dissipation
V
+7.0
1.0
t
P
W
D
o
Storage temperature (plastic)
Temperature under bias
DC output current
T
T
–55
–10
–
+150
+85
20
C
stg
bias
out
o
C
I
mA
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute max-
imum rating conditions for extended periods may affect reliability.
Truth table
CE1
H
X
CE2
X
WE
X
OE
X
Data
Mode
Standby (I , I
High-Z
High-Z
High-Z
)
)
SB SB1
L
X
X
Standby (I , I
SB SB1
L
H
H
H
H
H
L
H
L
Output Disable
Read
L
D
D
out
in
L
X
Write
Key: X = Don’t Care, L = LOW, H = HIGH
Recommended operating conditions
(T = 0°C to +70°C)
a
Parameter
Symbol
Min
4.5
0.0
2.2
–0.5
Typ
5.0
0.0
–
Max
5.5
0.0
Unit
V
V
CC
Supply voltage
GND
V
V
V
V
+1
CC
V
IH
IL
Input voltage
–
0.8
V
VIL min = –3.0V for pulse width less than tRC/2
2
AS7C512
DC operating characteristics1
(V = 5V±10%, GND = 0V, T = 0°C to +70°C)
CC
a
-12
-15
-20
-25
-35
Parameter
Symbol Test Conditions
Min Max Min Max Min Max Min Max Min Max Unit
Input leakage
current
V
V
= Max,
= GND to V
CC
in
|I |
–
–
1
1
–
–
1
1
–
–
1
1
–
–
1
1
–
–
1
1
µA
µA
LI
CC
CE1 = V or CE2 = V ,
V
V
IH
= Max,
= GND to V
IL
Output leakage
current
|I
|
LO
CC
out
CC
Operating
power supply
current
–
–
125
120
–
–
115
110
–
–
105
100
–
–
95
90
–
–
80 mA
75 mA
CE1 = V , CE2 = V ,
IL
IH
I
I
I
CC
SB
f = f
I
= 0 mA
L
L
L
max, out
–
–
–
45
40
–
–
–
35
30
–
–
–
35
30
–
–
–
30
25
–
–
–
25 mA
20 mA
5.0 mA
CE1 = V or CE2 = V ,
IH
IL
f = f
Standby
power supply
current
max
CE1 ≥ V –0.2V or CE2 ≤ 0.2V,
5.0
5.0
5.0
5.0
CC
V
≤ 0.2V or V ≥ V –0.2V,
SB1
in
in CC
–
0.75
–
0.75
–
0.75
–
0.75
–
0.75 mA
f = 0
V
V
I
I
= 8 mA, V = Min
–
0.4
–
–
0.4
–
–
0.4
–
–
0.4
–
–
0.4
–
V
V
OL
OL
CC
Output voltage
= –4 mA, V = Min
2.4
2.4
2.4
2.4
2.4
OH
OH
CC
Capacitance2
(f = 1 MHz, T = Room Temperature, V = 5V)
a
CC
Parameter
Symbol
Signals
Test Conditions
Max
5
Unit
pF
C
A, CE1, CE2, WE, OE
I/O
V
V
= 0V
Input capacitance
I/O capacitance
IN
in
in
C
= V = 0V
7
pF
I/O
out
Read cycle
(V = 5V±10%, GND = 0V, T = 0°C to +70°C)
CC a
-12
-15
-20
-25
-35
Parameter
Symbol
Unit Notes
ns
Min Max Min Max Min Max Min Max Min Max
Read cycle time
t
t
t
t
t
t
t
t
t
12
–
–
–
–
3
3
3
–
–
0
–
0
–
–
12
12
12
3
15
–
–
–
–
3
3
3
–
–
0
–
0
–
–
15
15
15
4
20
–
–
–
–
3
3
3
–
–
0
–
0
–
–
20
20
20
5
25
–
–
–
–
3
3
3
–
–
0
–
0
–
–
25
25
25
6
35
–
–
–
–
3
3
3
–
–
0
–
0
–
–
35
35
35
8
RC
Address access time
ns
ns
ns
ns
ns
3
AA
3, 12
3, 12
Chip enable (CE1) access time
ACE1
Chip enable (CE2) access time
ACE2
OE
Output enable (OE) access time
Output hold from address change
Chip enable (CE1) to output in Low Z
Chip enable (CE2) to output in Low Z
Chip disable (CE1) to output in High Z
–
–
–
–
–
5
OH
–
–
–
–
–
ns 4, 5, 12
ns 4, 5, 12
ns 4, 5, 12
ns 4, 5, 12
CLZ1
CLZ2
CHZ1
CHZ2
OLZ
OHZ
PU
–
–
–
–
–
3
4
5
6
8
Chip disable (CE2) to output in High Z t
3
4
5
6
8
Output enable to output in Low Z
Output disable to output in High Z
Chip enable to power up time
t
t
t
t
–
–
–
–
–
ns
ns
4, 5
4, 5
3
4
5
6
8
–
–
–
–
–
ns 4, 5, 12
ns 4, 5, 12
Chip disable to power down time
12
15
20
25
35
PD
3
AS7C512
Key to switching waveforms
Rising input
Falling input
Undefined output/don’t care
Read waveform 13,6,7,9,12
Address controlled
t
RC
Address
t
AA
t
OH
D
Data Valid
out
Read waveform 23,6,8,9,12
CE1 and CE2 controlled
1
t
RC
CE1
CE2
OE
t
OE
t
t
OHZ
OLZ
t
t
CHZ1, CHZ2
t
t
ACE1, ACE2
D
out
Data Valid
t
CLZ1, tCLZ2
t
PD
I
I
CC
SB
t
PU
Supply
current
50%
50%
Write cycle11,12
(V = 5V±10%, GND = 0V, T = 0°C to +70°C)
CC a
-12
-15
-20
-25
-35
Parameter
Symbol
Min Max Min Max Min Max Min Max Min Max Unit Notes
Write cycle time
t
t
t
t
t
t
t
t
t
t
t
12
10
10
10
0
–
–
–
–
–
–
–
–
–
5
–
15
10
10
10
0
–
–
–
–
–
–
–
–
–
5
–
20
12
12
12
0
–
–
–
–
–
–
–
–
–
5
–
20
15
15
15
0
–
–
–
–
–
–
–
–
–
5
–
30
20
20
20
0
–
–
–
–
–
–
–
–
–
5
–
ns
WC
CW1
CW2
AW
AS
ns 12
ns 12
ns
Chip enable (CE1) to write end
Chip enable (CE2) to write end
Address setup to write end
Address setup time
ns 12
ns
Write pulse width
8
9
12
0
15
0
17
0
WP
AH
Address hold from end of write
Data valid to write end
0
0
ns
8
9
12
0
15
0
15
0
ns
DW
DH
Data hold time
0
0
ns 4, 5
ns 4, 5
ns 4, 5
Write enable to output in High Z
Output active from write end
–
–
–
–
–
WZ
OW
3
3
3
3
3
4
AS7C512
Write waveform 110,11,12
WE controlled
t
WC
t
t
t
AW
AH
Address
WE
t
WP
t
AS
t
DW
DH
D
Data Valid
in
t
t
WZ
OW
D
out
Write waveform 210,11,12
CE1 and CE2 controlled
t
WC
t
t
AH
AW
Address
t
t
CW1, tCW2
AS
CE1
CE2
t
WP
WE
t
t
t
WZ
DW
DH
D
Data Valid
in
D
out
5
AS7C512
Typical DC and AC characteristics
Normalized supply current I , I
Normalized supply current I , I
Normalized supply current I
SB1
vs. ambient temperature T
a
CC SB
CC
CC SB
vs. supply voltage V
vs. ambient temperature T
a
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
625
25
I
V
= 5.0V
CC
I
CC
CC
5
1
I
I
SB
SB
0.2
0.04
4.0
4.5
5.0
5.5
–55
–10
35
80
-55
-10
35
80
6.0
125
125
Supply voltage (V)
Ambient temperature (°C)
Ambient temperature (°C)
Normalized access time t
Normalized access time t
AA
Normalized supply current I
AA
CC
vs. supply voltage V
vs. ambient temperature T
vs. cycle frequency 1/t , 1/t
RC WC
CC
a
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T = 25°C
V
= 5.0V
V
= 5.0V
CC
a
CC
T = 25°C
a
4.0
4.5
5.0
5.5
–55
–10
35
80
0
20
40
60
6.0
125
80
Supply voltage (V)
Ambient temperature (°C)
Cycle frequency (MHz)
Typical access time change ∆t
AA
Output source current I
Output sink current I
vs. output voltage V
OH
OL
vs. output voltage V
vs. output capacitive loading
OH
OL
140
120
100
80
140
120
100
80
35
30
25
20
15
10
5
V
= 5.0V
V
= 5.0V
V
= 4.5V
CC
CC
CC
T = 25°C
T = 25°C
a
a
60
60
40
40
20
20
0
0.0
0
0.0
0
1.25
2.5
3.75
1.25
2.5
3.75
0
250
500
750
5.0
5.0
1000
Output voltage (V)
Output voltage (V)
Capacitance (pF)
6
AS7C512
Data retention characteristics
L version only
Parameter
Symbol
Test Conditions
= 2.0V
Min
2.0
–
Max
–
Unit
V
V
for data retention
V
V
CC
CC
DR
Data retention current
I
t
200
–
µA
ns
CCDR
CE1 ≥ V –0.2V or
CC
Chip deselect to data retention time
Operation recovery time
Input leakage current
0
CE2 ≤ 0.2V
CDR
R
t
t
–
ns
RC
V
≥ V –0.2V or
CC
in
| I |
–
1
µA
V
≤ 0.2V
LI
in
Data retention waveform
L version only
Data retention mode
DR ≥ 2.0V
V
4.5V
4.5V
V
CC
t
t
R
CDR
V
DR
V
V
CE1
IH
IH
AC test conditions
– Output load: see Figure B,
Thevenin equivalent:
except for t
and t
see Figure C.
CLZ
CHZ
168Ω
D
+1.728V
out
– Input pulse level: GND to 3.0V. See Figure A.
– Input rise and fall times: 5 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
+5V
+5V
480Ω
480Ω
D
D
out
out
+3.0V
90%
10%
90%
10%
*including scope
and jig capacitance
255Ω
30 pF*
GND
255Ω
5 pF*
GND
GND
Figure B: Output load
Figure C: Output load for t
, t
Figure A: Input waveform
CLZ CHZ
Notes
1. During V power-up, a pull-up resistor to V on CE1 is required to meet I specification.
CC
CC
SB
2. This parameter is sampled and not 100% tested.
3. For test conditions, see AC Test Conditions, Figures A, B, C.
4. t
and t
are specified with CL = 5pF as in Figure C. Transition is measured ±500mV from steady-state voltage.
CLZ
CHZ
5. This parameter is guaranteed but not tested.
6. WE is HIGH for read cycle.
7. CE1 and OE are LOW and CE2 is HIGH for read cycle.
8. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH.
9. All read cycle timings are referenced from the last valid address to the first transitioning address.
10. CE1 or WE must be HIGH or CE2 LOW during address transitions.
11. All write cycle timings are referenced from the last valid address to the first transitioning address.
12. CE1 and CE2 have identical timing.
7
AS7C512
Ordering codes
Package \ Access Time
12 ns
15 ns
20 ns
25 ns
35 ns
AS7C512-12PC
AS7C512L-12PC
AS7C512-15PC
AS7C512L-15PC
AS7C512-20PC
AS7C512L-20PC
AS7C512-25PC
AS7C512L-25PC
AS7C512-35PC
AS7C512L-35PC
Plastic DIP, 300 mil
AS7C512-12JC
AS7C512L-12JC
AS7C512-15JC
AS7C512L-15JC
AS7C512-20JC
AS7C512L-20JC
AS7C512-25JC
AS7C512L-25JC
AS7C512-35JC
AS7C512L-35JC
Plastic SOJ, 300 mil
Plastic SOIC, 525 mil
AS7C512-12SC
AS7C512L-12SC
AS7C512-15SC
AS7C512L-15SC
AS7C512-20SC
AS7C512L-20SC
AS7C512-25SC
AS7C512L-25SC
AS7C512-35SC
AS7C512L-35SC
Part numbering system
AS7C
512
X
–XX
X
C
Package: P = PDIP 300 mil
Blank
L
=
=
Standard power
Low power
Commercial temperature range,
0°C to 70 °C
SRAM prefix
Device number
Access time
J
= SOJ 300 mil
S
= SOIC 525 mil
Representatives, distributors, and sales offices
DOMESTIC REPS
KANSAS
NEW JERSEY
TEXAS
EUROPE
TAIWAN
Asian Specific Tech.
+886-2-521-2363
Britcomp Sales
Southern States Marketing
CenTech
North
ALABAMA
(816) 358-8100
ERA Associates
(800) 645-5500
Surrey, England
+44-1932 347077
+44-1932 346256
Austin
(512) 835-5822
Concord Component
(205) 772-8883
Golden Way Electronics
+886-2-698-1868 x505
KENTUCKY
CC Electro Sales
(317) 921-5000
South
Electro Tech
(610) 272-2125
Dallas
(214) 238-7500
ARKANSAS
Southern States Marketing
(214) 238-7500
Munich, Germany
+49-894488496
Puteam International
+886-2-729-0373
Houston
(713) 895-8533
LOUISIANA
Southern States Marketing
NEW YORK
Athismons, France
+33-1-69387678
CALIFORNIA
NYC
UTAH
Charles Fields & Assoc.
(801) 299-8228
North
Brooks Technical
(415) 960-3880
ERA Associates
(516) 543-0510
North
(214) 238-7500
DISTRIBUTORS
All American
HQ: (305) 621-8282
interACTIVE
Great Britain, Ireland
+44-1773-740263
Upstate
Tri-Tech
South
(713) 895-8533
LA Area
Competitive Tech.
(714) 450-0170
VERMONT
Kitchen & Kutchin
(617) 229-2660
Axis: Components, Inc.
HQ: (800) 556-0225
Rochester
(716) 385-6500
Ramtec Int’l B.V.
MAINE
Kitchen & Kutchin
(617) 229-2660
San Diego
ATS
(619) 634-1488
Holland, Spain, Italy,
Belgium, Hungary,
Russia
Binghamton
(607) 722-3580
VIRGINIA
Chesapeake Tech.
(301) 236-0530
Future Electronics
HQ: (514) 594-7710
NORTH CAROLINA
Concord Component
(919) 846-3441
MARYLAND
Chesapeake Tech.
(301) 236-0530
+31-2526-21222
COLORADO
Technology Sales
(303) 692-8835
Interface Electronics
HQ: (800) 632-7792
WASHINGTON
HONG KONG
Eastele Technology
+852-2798-8860
ES/Chase
Please contact your rep to
locate a distributor near you
(206) 823-9535
NORTH DAKOTA
D. A. Case Associates
(612) 831-6777
CONNECTICUT
Kitchen & Kutchin
(203) 239-0212
MASSACHUSETTS
Kitchen & Kutchin
(617) 229-2660
WEST VIRGINIA
Chesapeake Tech.
(301) 236-0530
INDIA
Priya Electronics, Inc.
San Jose, CA USA
(408) 954-1866
OHIO
DELAWARE
Electro Tech
(610) 272-2125
SALES OFFICES
MICHIGAN
Enco Group
(810) 338-8600
Midwest Marketing Assoc.
WISCONSIN
D. A. Case Associates
(612) 831-6777
Lyndhurst
(216) 381-8575
HEADQUARTERS
Alliance Semiconductor
San Jose, CA
Satcom Sales & Srvcs.
+91-40-761-4675
FLORIDA
Micro-Electronic Comp.
Dayton
(513) 433-2511
MINNESOTA
D. A. Case Associates
(612) 831-6777
(408) 383-4900
WYOMING
Technology Sales
(303)692-8835
ISRAEL
Eldis Technology
+972-9-562-666
Deerfield Beach
(954) 426-8944
NORTHEAST AREA
Alliance Semiconductor
Boston, MA
OKLAHOMA
Southern States Marketing
(214) 238-7500
MISSOURI
CenTech
Orlando
(407) 682-9602
(617) 239-8127
JAPAN
OREGON
ES/Chase
(503) 684-8500
INTERNATIONAL REPS
Tokyo
Bussan Micro Electronics
+81-3-5421-1730
Tampa
(813) 393-5011
East
(314) 291-4230
AUSTRALIA
TECHNICAL CENTER
GEORGIA
West
(816) 358-8100
PENNSYLVANIA
Dingley
Kyoto
Rohm Co. Ltd.
+81-75-311-2121
TAIWAN
Concord Component
(770) 416-9597
R&D Electronics
East
Alliance Semiconductor
Tel:+886-2-516-7995
Fax:+886-2-517-4928
alliance@netra.wow.net.tw
+61-3-9558-0444
Electro Tech
(610) 272-2125
MISSISSIPPI
Concord Component
(205) 772-8883
HAWAII
Brooks Technical
(415) 960-3880
Bayswater
ACD
+61-3-9762-7644
KOREA
FM Korea
+822-596-3880
fm@ktnet.co.kr
West
Midwest Marketing
(216) 381-8575
MONTANA
ES/Chase
(503) 684-8500
IDAHO
ES/Chase
(503) 684-8500
CANADA
J-Squared Technologies
RHODE ISLAND
Kitchen & Kutchin
(617) 229-2660
Woo Young Tech
+822-369-7099
Ottawa
(613) 592-9540
ILLINOIS
NEBRASKA
CenTech
(816) 358-8100
MALAYSIA
Exer Technologies
+60-4-657-9592
SOUTH CAROLINA
Concord Component
(919) 846-3441
North
El-Mech
(312) 794-9100
Toronto
(905) 672-2030
Montreal
(514) 747-1211
NEVADA
Brooks Technical
(415) 960-3880
PUERTO RICO
Micro-Electronic Comp.
(787) 746-9897
South
CenTech
(314) 291-4230
SOUTH DAKOTA
D. A. Case Associates
(612) 831-6777
Vancouver
(604) 473-4666
NEW HAMPSHIRE
Kitchen & Kutchin
(617) 229-2660
SINGAPORE
Exer Technologies
+65-749-1349
INDIANA
CC Electro Sales
(317) 921-5000
TENNESSEE
Concord Component
(205) 772-8883
Calgary
(403) 291-6755
Alliance Semiconductor reserves the right to make changes in this data sheet at any time to improve design and supply the best product possible. Publication of advance information does not constitute a
committment to produce or supply the product described. The company cannot assume responsibility for circuits shown or represent that they are free from patent infringement. Alliance products are not
authorized for use as critical components in life support devices or systems without the express written approval of the president of Alliance. ProMotion® and the Alliance logo are registered trademarks
of Alliance Semiconductor Corporation. All other trademarks are property of their respective holders.
ALLIANCE SEMICONDUCTOR
3099 North First Street San Jose, CA 95134 Tel (408) 383-4900 Fax (408) 383-4999 www.alsc.com
Printed in U.S.A.
Copyright © 1996 All rights reserved.
June 1996
相关型号：
©2020 ICPDF网 联系我们和版权申明