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AS80M2185-08TR [ALSC]

Clock Generator;
AS80M2185-08TR
型号： AS80M2185-08TR
厂家： ALLIANCE SEMICONDUCTOR CORPORATION    ALLIANCE SEMICONDUCTOR CORPORATION
描述：

Clock Generator
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中文：  中文翻译
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Product Proposal  
AS80M2185  
EMI Reduction IC  
Alliance Semiconductor  
FEATURES  
•
2 spread % selections:  
- 1.25% and – 3.75%  
•
•
•
FCC approved method of EMI attenuation  
•
•
•
•
3.3V operating voltage  
Provides up to 15 dB EMI reduction  
CMOS/TTL compatible inputs and outputs  
Low power CMOS design  
Generates a 1X low EMI spread spectrum  
clock from the input frequency  
•
•
Optimized for frequency range:  
AS80M2185: 25 MHz to 50 MHz  
Supports notebook VGA and other LCD timing  
controller applications  
Internal loop filter minimizes external  
components and board space  
•
•
Products are available for industrial  
temperature range.  
•
•
Down Spread  
Available in 8 pin SOIC and TSSOP  
Low inherent cycle-to-cycle jitter  
PRODUCT DESCRIPTION  
The AS80M2185 modulates the output of a single  
PLL in order to “spread” the bandwidth of a  
synthesized clock, thereby decreasing the peak  
amplitudes of its harmonics. This results in  
significantly lower system EMI compared to the  
typical narrow band signal produced by oscillators  
and most clock generators. Lowering EMI by  
increasing a signal’s bandwidth is called “spread  
spectrum clock generation”.  
The AS80M2185 is a versatile spread spectrum  
frequency modulator designed specifically for a  
wide range of input clock frequencies from 25 to  
50 MHz. The AS80M2185 can generate an EMI  
reduced clock from an OSC or a system generated  
clock.  
The  
AS80M2185  
reduces  
electromagnetic  
interference (EMI) at the clock source, allowing a  
system wide EMI reduction for all the down stream  
The AS80M2185 uses the most efficient and  
optimized modulation profile approved by the FCC  
and is implemented by using a proprietary all-  
digital method.  
clocks and data dependent signals.  
The  
AS80M2185 allows significant system cost savings  
by reducing the number of circuit board layers,  
ferrite beads, shielding, and other passive  
components that are traditionally required to pass  
EMI regulations.  
APPLICATIONS  
The AS80M2185 is targeted towards EMI  
management for memory and LVDS interfaces in  
mobile graphic chipsets and high-speed digital  
applications such as PC peripheral devices,  
consumer electronics, and embedded controller  
systems.  
Jul., 2003  
Revision A  
PulseCore – A Division of Alliance Semiconductor  
3160 De La Cruz Blvd., Suite 200 • Santa Clara • CA • 95054  
Tel (408) 855-4900 • Fax (408) 855-4999  
http://www.alsc.com  
1 of 5  
Product Proposal  
AS80M2185  
Alliance Semiconductor  
Figure 1 – AS80M2185 Pin Diagrams  
XIN  
NC  
XOUT  
GND  
NC  
VDD  
MODOUT  
SS%  
AS80M2185  
Figure 2 – AS80M2185 Block Diagram  
Jun., 2003  
Revision A  
PulseCore – A Division of Alliance Semiconductor  
3160 De La Cruz Blvd., Suite 200 • Santa Clara • CA • 95054  
Tel (408) 855-4900 • Fax (408) 855-4999  
http://www.alsc.com  
2 of 5  
Product Proposal  
AS80M2185  
Alliance Semiconductor  
Table 1 - Spread Deviation Selections  
Part Number  
SS% (pin 4)  
Spread Deviation  
0
1
- 1.25%  
- 3.75%  
AS80M2185  
PIN DESCRIPTION  
PIN # Name  
Type Description  
1
2
3
4
XIN  
I
Connect to externally generated clock signal.  
XOUT  
GND  
SS%  
I
Crystal Connection.  
P
I
Ground.  
Spread Range Select. Digital logic input used to select frequency deviation  
(see Table 1). This pin has an internal pull-up resistor.  
5
6
7
8
ModOut  
VDD  
NC  
O
P
I
Spread Spectrum low EMI output  
Connect to +3.3V.  
No connect.  
NC  
I
No connect.  
Jun., 2003  
Revision A  
PulseCore – A Division of Alliance Semiconductor  
3160 De La Cruz Blvd., Suite 200 • Santa Clara • CA • 95054  
Tel (408) 855-4900 • Fax (408) 855-4999  
http://www.alsc.com  
3 of 5  
Product Proposal  
AS80M2185  
Alliance Semiconductor  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Rating  
Unit  
VDD, VIN  
TSTG  
TA  
Voltage on any pin with respect to GND  
Storage Temperature  
Operating Temperature  
-0.5 to +7.0  
-65 to +125  
0 to +70  
V
ºC  
ºC  
DC ELECTRICAL CHARACTERISTICS  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
VIL  
VIH  
Input Low Voltage  
Input High Voltage  
GND – 0.3  
2.0  
-
-
-
-
0.8  
VDD+0.3  
V
V
IIL  
Input Low Current  
-
-
-
-35  
35  
-
µA  
IIH  
Input High Current  
µA  
IXOL  
XOUT Output Low Current  
(@ 0.4V, VDD = 3.3V)  
TBD  
mA  
IXOH  
VOL  
VOH  
IDD  
XOUT Output High Current  
(@ 2.5V, VDD = 3.3V)  
-
-
TBD  
-
-
mA  
V
Output Low Voltage  
0.4  
(VDD=3.3V, IOL = 20 mA)  
Output High Voltage  
2.5  
-
-
-
-
V
(VDD=3.3V, IOH = 20 mA)  
Static Supply Current  
Standby Mode  
0.6  
12  
mA  
mA  
ICC  
Dynamic Supply Current  
Normal Mode (3.3V and 10 pF loading)  
Operating Voltage  
8.46  
17.78  
VDD  
tON  
2.7  
-
3.3  
3.7  
-
V
Power Up Time  
0.18  
mS  
(First locked clock cycle after power up)  
Clock Output Impedance  
ZOUT  
-
50  
-
Ω
AC ELECTRICAL CHARACTERISTICS  
Symbol  
Parameter  
Min  
Typ  
-
Max  
Unit  
fIN  
Input Frequency  
25  
25  
0.7  
50  
50  
1.1  
MHz  
MHz  
ns  
fOUT  
Output Frequency  
-
tLH  
Output Rise Time  
0.9  
Note 1  
tHL  
(measured at 0.8V to 2.0V)  
Output Fall Time  
0.6  
0.8  
1.0  
ns  
Note 1  
tJC  
(measured at 2.0V to 0.8V)  
Jitter (cycle to cycle)  
-
45  
-
50  
200  
55  
ps  
%
tD  
Output Duty Cycle  
Note1: tLH and tHL are measured into a capacitive load of 15pF  
Jun., 2003  
Revision A  
PulseCore – A Division of Alliance Semiconductor  
3160 De La Cruz Blvd., Suite 200 • Santa Clara • CA • 95054  
Tel (408) 855-4900 • Fax (408) 855-4999  
http://www.alsc.com  
4 of 5  
Product Proposal  
AS80M2185  
Alliance Semiconductor  
Figure 3 - Mechanical Package Outline (8 Pin SOIC)  
INCHES  
MILLIMETERS  
NOR MAX MIN NOR MAX  
SYMBOL MIN  
0.057 0.064 0.071 1.45 1.63 1.80  
0.004 0.007 0.010 0.10 0.18 0.25  
0.053 0.061 0.069 1.35 1.55 1.75  
0.012 0.016 0.020 0.31 0.41 0.51  
0.004 0.006 0.001 0.10 0.15 0.25  
0.186 0.194 0.202 4.72 4.92 5.12  
0.148 0.156 0.164 3.75 3.95 4.15  
A
A1  
A2  
B
C
D
E
0.050 BSC  
1.27 BSC  
e
0.224 0.236 0.248 5.70 6.00 6.30  
0.012 0.020 0.028 0.30 0.50 0.70  
H
L
0°  
5°  
8°  
0°  
5°  
8°  
a
Note: Controlling dimensions are millimeters.  
SOIC - 0.074 grams unit weight  
Figure 4 - Mechanical Package Outline (8 Pin TSSOP)  
INCHES  
MILLIMETERS  
SYMBOL MIN  
NOR MAX MIN NOR MAX  
-
-
-
0.047  
-
-
-
1.10  
0.15  
A
A1  
A2  
B
0.002  
0.006 0.05  
0.031 0.039 0.041 0.80 1.00 1.05  
0.007  
0.004  
-
-
0.012 0.19  
0.008 0.09  
-
-
0.30  
0.20  
C
0.114 0.118 0.122 2.90 3.00 3.10  
0.169 0.173 0.177 4.30 4.40 4.50  
D
E
0.026 BSC  
0.65 BSC  
e
0.244 0.252 0.260 6.20 6.40 6.60  
0.018 0.024 0.030 0.45 0.60 0.75  
H
L
0°  
-
8°  
0°  
-
8°  
a
Note: Controlling dimensions are millimeters.  
TSSOP - 0.034 grams unit weight  
Jun., 2003  
Revision A  
PulseCore – A Division of Alliance Semiconductor  
3160 De La Cruz Blvd., Suite 200 • Santa Clara • CA • 95054  
Tel (408) 855-4900 • Fax (408) 855-4999  
http://www.alsc.com  
5 of 5  

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