29LV400BA [AMD]

4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory; 4兆位( 512K的×8位/ 256千×16位) CMOS 3.0伏只引导扇区闪存
29LV400BA
元器件型号: 29LV400BA
生产厂家: ADVANCED MICRO DEVICES    ADVANCED MICRO DEVICES
描述和应用:

4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
4兆位( 512K的×8位/ 256千×16位) CMOS 3.0伏只引导扇区闪存

闪存
PDF文件: 总40页 (文件大小:486K)
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型号参数:29LV400BA参数

29LV400C-55R

4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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163 MCNIX

29LV400C-70

4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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70 MCNIX

29LV400C-90

4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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53 MCNIX

29LV640

flash memory

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866 MCNIX

29LV650

64M (4M x 16) BIT

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193 FUJITSU

29LV800BB-70

8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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567 MCNIX

29LV800BB-90

8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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52 MCNIX

29LV800BE

8M (1M x 8/512 K x 16) BIT

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738 FUJITSU

29LV800BT-70

8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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113 MCNIX

29LV800BT-90

8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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66 MCNIX

29LV800TE

8M (1M x 8/512 K x 16) BIT

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539 FUJITSU

29MMMETRIC

LOCHST.D=656MM

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315 ETC

29MPA0373

26.0-31.0 GHz GaAs MMIC Power Amplifier

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34 MIMIX

29MT050XH

Power Field-Effect Transistor, 46A I(D), 500V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTP, 12 PIN

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0 IRF

29MT050XH

Power Field-Effect Transistor, 46A I(D), 500V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MTP, 12 PIN

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0 INFINEON