AM27X64-200JC [AMD]
64 Kilobit (8 K x 8-Bit) CMOS ExpressROM Device; 64千位(为8K ×8位)的CMOS ExpressROM设备型号: | AM27X64-200JC |
厂家: | AMD |
描述: | 64 Kilobit (8 K x 8-Bit) CMOS ExpressROM Device |
文件: | 总10页 (文件大小:134K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FINAL
Am27X64
64 Kilobit (8 K x 8-Bit) CMOS ExpressROM Device
DISTINCTIVE CHARACTERISTICS
■ As an OTP EPROM alternative:
— Factory optimized programming
— Fully tested and guaranteed
■ ±10% power supply tolerance
■ High noise immunity
■ Low power dissipation
— 100 µA maximum CMOS standby current
■ As a Mask ROM alternative:
— Shorter leadtime
■ Available in Plastic Dual-In-line Package (PDIP)
and Plastic Leaded Chip Carrier (PLCC)
— Lower volume per code
■ Latch-up protected to 100 mA from –1 V to
■ Fast access time
— 55 ns
VCC + 1 V
■ Versatile features for simple interfacing
— Both CMOS and TTL input/output compatibility
— Two line control functions
■ Single +5 V power supply
■ Compatible with JEDEC-approved EPROM
pinout
GENERAL DESCRIPTION
The Am27X64 is a factory programmed and tested
OTP EPROM. It is programmed after packaging prior to
final test. Every device is rigorously tested under AC
and DC operating conditions to your stable code. It is
organized as 8 Kwords by 8 bits per word and is avail-
able in plastic dual in-line packages (PDIP), as well as
plastic leaded chip carrier (PLCC) packages. Express-
ROM devices provide a board-ready memory solution
for medium to high volume codes with short leadtimes.
This offers manufacturers a cost-effective and flexible
alternative to OTP EPROMs and mask programmed
ROMs.
Data can be accessed as fast as 55 ns, allowing
high-performance microprocessors to operate with re-
duced WAIT states. The device offers separate Output
Enable (OE#) and Chip Enable (CE#) controls, thus
eliminating bus contention in a multiple bus micropro-
cessor system.
AMD’s CMOS process technology provides high
speed, low power, and high noise immunity. Typical
power consumption is only 80 mW in active mode, and
100 µW in standby mode.
BLOCK DIAGRAM
Data Outputs DQ0–DQ7
V
V
CC
SS
Output Enable
Chip Enable
and
OE#
CE#
Output
Buffers
Prog Logic
Y
Y
Gating
Decoder
A0–A12
Address
Inputs
65,538
Bit Cell
Matrix
X
Decoder
12084F-1
Publication# 12084 Rev: F Amendment/0
Issue Date: May 1998
PRODUCT SELECTOR GUIDE
Family Part Number
Am27X64
V
V
= 5.0 V ± 5%
= 5.0 V ± 10%
-255
CC
CC
Speed Options
-55
55
55
35
-70
70
70
40
-90
90
90
40
-120
120
120
50
-150
150
150
50
-200
200
200
50
Max Access Time (ns)
CE# (E#) Access (ns)
OE# (G#) Access (ns)
250
250
50
CONNECTION DIAGRAMS
Top View
DIP
PLCC
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
VPP
A12
A7
2
PGM# (P#)
NC
3
4
3
2
1 32 31 30
A8
A6
4
A6
5
6
A8
A9
29
A5
A9
5
A5
28
A4
A11
6
A4
A3
7
A11
27
26
25
24
23
22
21
8
NC
A3
OE# (G#)
A10
7
A2
9
OE# (G#)
A10
A2
8
A1
10
11
12
13
A1
CE# (E#)
DQ7
9
A0
CE# (E#)
DQ7
A0
10
11
12
13
14
NC
DQ0
DQ0
DQ6
DQ6
DQ1
DQ2
VSS
DQ5
DQ4
DQ3
16 17
19 20
18
15
14
12084F-3
12084F-2
Notes:
1. JEDEC nomenclature is in parenthesis.
2. Don’t use (DU) for PLCC.
PIN DESIGNATIONS
LOGIC SYMBOL
A0–A12
= Address Inputs
CE# (E#)
= Chip Enable Input
13
DQ0–DQ7 = Data Input/Outputs
OE# (G#) = Output Enable Input
PGM# (P#) = Program Enable Input
8
A0–A12
DQ0–DQ7
CE# (E#)
OE# (G#)
VCC
VPP
VSS
NC
= VCC Supply Voltage
= Program Voltage Input
= Ground
12084F-4
= No Internal Connection
2
Am27X64
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the following:
AM27X64
XXXXX
-55
J
C
CODE DESIGNATION
Assigned by AMD
TEMPERATURE RANGE
C
I
= Commercial (0°C to +70°C)
= Industrial (–40°C to +85°C)
PACKAGE TYPE
P
J
= 28-Pin Plastic Dual In-Line Package (PD 028)
= 32-Pin Plastic Leaded Chip Carrier (PL 032)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am27X64
64 Kilobit (8 K x 8-Bit) CMOS ExpressROM Device
Valid Combinations
Valid Combinations
AM27X64-55
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
AM27X64-70
AM27X64-90
AM27X64-120
AM27X64-150
AM27X64-200
AM27X64-255
PC, JC, PI, JI
V
= 5.0 V ± 5%
CC
Am27X64
3
FUNCTIONAL DESCRIPTION
Read Mode
CE# should be decoded and used as the primary de-
vice-selecting function, while OE# be made a common
connection to all devices in the array and connected to
the READ line from the system control bus. This as-
sures that all deselected memory devices are in their
low-power standby mode and that the output pins are
only active when data is desired from a particular mem-
ory device.
To obtain data at the device outputs, Chip Enable (CE#)
and Output Enable (OE#) must be driven low. CE# con-
trols the power to the device and is typically used to se-
lect the device. OE# enables the device to output data,
independent of device selection. Addresses must be
stable for at least tACC–tOE. Refer to the Switching
Waveforms section for the timing diagram.
System Applications
Standby Mode
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 µF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
VCC and VSS to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on Express-
ROM device arrays, a 4.7 µF bulk electrolytic capacitor
should be used between VCC and VSS for each eight
devices. The location of the capacitor should be close
to where the power supply is connected to the array.
The device enters the CMOS standby mode when CE#
is at VCC ± 0.3 V. Maximum VCC current is reduced to
100 µA. The device enters the TTL-standby mode
when CE# is at VIH. Maximum VCC current is reduced
to 1.0 mA. When in either standby mode, the device
places its outputs in a high-impedance state, indepen-
dent of the OE# input.
Output OR-Tieing
To accommodate multiple memory connections, a
two-line control function provides:
■ Low memory power dissipation, and
■ Assurance that output bus contention will not occur.
MODE SELECT TABLE
Mode
CE#
OE#
PGM#
V
Outputs
PP
Read
V
V
X
X
X
X
X
X
X
X
D
OUT
IL
IL
Output Disable
Standby (TTL)
Standby (CMOS)
X
V
High Z
High Z
High Z
IH
V
X
IH
V
± 0.3 V
X
CC
Note:
X = Either V or V .
IH
IL
4
Am27X64
ABSOLUTE MAXIMUM RATINGS
OPERATING RANGES
Storage Temperature
Commercial (C) Devices
OTP Products. . . . . . . . . . . . . . . . . . –65°C to +125°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55°C to +125°C
Ambient Temperature (TA) . . . . . . . . . . .0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . .–40°C to +85°C
Supply Read Voltages
Voltage with Respect to VSS
All pins except VCC . . . . . . . . . –0.6 V to VCC + 0.6 V
VCC (Note 1). . . . . . . . . . . . . . . . . . . . .–0.6 V to 7.0 V
Note:
VCC for ± 5% devices . . . . . . . . . . +4.75 V to +5.25 V
VCC for ± 10% devices . . . . . . . . . +4.50 V to +5.50 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
1. Minimum DC voltage on input or I/O pins –0.5 V. During
voltage transitions, the input may overshoot V to –2.0 V
SS
for periods of up to 20 ns. Maximum DC voltage on input
and I/O pins is V + 5 V. During voltage transitions, input
CC
and I/O pins may overshoot to V + 2.0 V for periods up
CC
to 20ns.
Stresses above those listed under “Absolute Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these
or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure of
the device to absolute maximum ratings for extended periods
may affect device reliability.
Am27X64
5
DC CHARACTERISTICS over operating range (unless otherwise specified)
Parameter
Symbol
Parameter Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Test Conditions
Min
Max
Unit
V
V
I
= –400 µA
= 2.1 mA
2.4
OH
OH
OL
V
I
0.45
V
OL
V
2.0
V
+ 0.5
V
IH
CC
V
Input LOW Voltage
–0.5
+0.8
1.0
V
IL
I
Input Load Current
V
V
= 0 V to V
µA
µA
LI
IN
CC
I
Output Leakage Current
= 0 V to V
CC
1.0
LO
OUT
I
V
Active Current (Note 2)
CE# = V , f = 10 MHz,
IL
CC1
CC
25
mA
I
= 0 mA
OUT
I
I
V
V
TTL Standby Current
CE# = V
IH
1.0
mA
µA
CC2
CC3
CC
CC
CMOS Standby Current
CE# = V ± 0.3 V
100
CC
Caution: The device must not be removed from (or inserted into) a socket when V or V is applied.
CC
PP
Notes:
1. V must be applied simultaneously or before V , and removed simultaneously or after V ..
CC
PP
PP
2. I
is tested with OE# = V to simulate open outputs.
IH
CC1
3. Minimum DC Input Voltage is –0.5 V. During transitions, the inputs may overshoot to –2.0 V for periods less than 20 ns.
Maximum DC Voltage on output pins is V + 0.5 V, which may overshoot to V + 2.0 V for periods less than 20 ns.
CC
CC
30
25
20
15
10
30
25
20
15
10
–75 –50 –55
0
25 50 75 100 125 150
1
2
3
4
5
6
7
8
9
10
Temperature in °C
Frequency in MHz
12084F-5
12084F-6
Figure 1. Typical Supply Current vs. Frequency
Figure 2. Typical Supply Current vs. Temperature
VCC = 5.5 V, f = 10 MHz
VCC = 5.5 V, T = 25°C
6
Am27X64
TEST CONDITIONS
5.0 V
Table 1. Test Specifications
All
2.7 kΩ
Test Condition
-55, -70
others
Unit
Device
Under
Test
Output Load
1 TTL gate
Output Load Capacitance, C
(including jig capacitance)
L
30
100
pF
C
L
6.2 kΩ
Input Rise and Fall Times
Input Pulse Levels
≤ 20
ns
0.0–3.0 0.45–2.4
V
Input timing measurement
reference levels
1.5
1.5
0.8, 2.0
0.8, 2.0
V
V
Note:
Diodes are IN3064 or equivalents.
Output timing measurement
reference levels
12084F-7
Figure 3. Test Setup
SWITCHING TEST WAVEFORM
3 V
2.4 V
2.0 V
0.8 V
2.0 V
Test Points
1.5 V
Test Points
1.5 V
0.8 V
0 V
0.45 V
Input
Output
Input
Output
Note: For C = 30 pF.
Note: For C = 100 pF.
L
L
12084F-8
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Does Not Apply
Changing, State Unknown
Center Line is High Impedance State (High Z)
KS000010-PAL
Am27X64
7
AC CHARACTERISTICS
Parameter Symbols
Am27X64
JEDEC Standard
Description
Test Setup
-55 -70 -90 -120 -150 -200 -255 Unit
CE#,
OE# = V
t
t
t
Address to Output Delay
Max
55
70
90 120 150 200 250
90 120 150 200 250
ns
AVQV
ACC
IL
IL
IL
t
Chip Enable to Output Delay
OE# = V
Max
Max
55
35
70
40
ns
ns
ELQV
GLQV
CE
t
t
Output Enable to Output Delay CE# = V
40
50
50
50
50
OE
Chip Enable High or Output
Enable High to Output High Z,
Whichever Occurs First
t
t
t
EHQZ
GHQZ
DF
Max
Min
25
0
25
0
25
30
30
30
30
ns
ns
(Note 2)
Output Hold Time from
Addresses, CE# or OE#,
Whichever Occurs First
t
t
0
0
0
0
0
AXQX
OH
Caution: Do not remove the device from (or insert it into) a socket or board that has V or V applied.
PP
CC
Notes:
1. V must be applied simultaneously or before V , and removed simultaneously or after V .
PP
CC
PP
2. This parameter is sampled and not 100% tested.
3. Switching characteristics are over operating range, unless otherwise specified.
4. See Figure 3 and Table 1 for test specifications.
SWITCHING WAVEFORMS
2.4
2.0
0.8
2.0
0.8
Addresses
0.45
Addresses Valid
CE#
OE#
t
CE
t
(Note 2)
DF
t
OE
t
ACC
t
OH
(Note 1)
High Z
High Z
Output
Valid Output
12084F-9
Notes:
1. OE# may be delayed up to t
– t after the falling edge of the addresses without impact on t .
ACC
ACC
OE
2. t is specified from OE# or CE#, whichever occurs first.
DF
PACKAGE CAPACITANCE
PD 028
PL 032
Parameter Symbol
Parameter Description
Input Capacitance
Test Conditions
Typ
Max
10
Typ
10
Max
12
Unit
pF
C
V
V
= 0
5
8
IN
IN
C
Output Capacitance
= 0
10
11
14
pF
OUT
OUT
Notes:
1. This parameter is only sampled and not 100% tested.
2. T = +25°C, f = 1 MHz.
A
8
Am27X64
PHYSICAL DIMENSIONS
PD 028—28-Pin Plastic Dual In-Line Package (measured in inches)
1.440
1.480
.600
.625
15
14
28
.530
.580
.008
.015
Pin 1 I.D.
.630
.700
.045
.065
0°
10°
.005 MIN
.140
.225
16-038-SB-AG
PD 028
DG75
SEATING PLANE
.015
.060
.014
.022
7-13-95 ae
.120
.160
.090
.110
PL 032—32-Pin Plastic Leaded Chip Carrier (measured in inches)
.485
.495
.447
.453
.009
.015
.042
.056
.125
.140
.585
.595
Pin 1 I.D.
.080
.095
.547
.553
SEATING
PLANE
.400
REF.
.490
.530
.013
.021
.050 REF.
16-038FPO-5
PL 032
DA79
.026
.032
TOP VIEW
SIDE VIEW
6-28-94 ae
Am27X64
9
REVISION SUMMARY FOR AM27X64
Revision F
Global
Changed formatting to match current data sheets.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are trademarks of Advanced Micro Devices, Inc.
Flashrite is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
10
Am27X64
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