AM29F200BB-90DW1_技术文档

Am29F200B

Known Good Die

Data Sheet

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SUPPLEMENT

Am29F200B Known Good Die

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1

DISTINCTIVE CHARACTERISTICS

■ 5.0 V 10% for read and write operations

■ Embedded Algorithms

— Minimizes system level power requirements

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F200A device

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ High performance

— 70, 90, or 120 ns access time

■ Minimum 1,000,000 write/erase cycles

guaranteed

■ Low power consumption

■ Compatible with JEDEC standards

— 20 mA typical active read current (byte mode)

— Pinout and software compatible with

single-power-supply flash

— 28 mA typical active read current for

(word mode)

— Superior inadvertent write protection

— 30 mA typical program/erase current

— 1 µA typical standby current

■ Data# Polling and Toggle Bit

— Detects program or erase cycle completion

■ Ready/Busy# output (RY/BY#)

■ Sector erase architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

three 64 Kbyte sectors (byte mode)

— Hardware method for detection of program or

erase cycle completion

— One 8 Kword, two 4 Kword, one 16 Kword, and

three 32 Kword sectors (word mode)

■ Erase Suspend/Resume

— Supports full chip erase

— Supports reading data from a sector not being

erased

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

■ Hardware RESET# pin

— Resets internal state machine to the reading

array data

Sectors can be locked via programming

equipment

■ 20-year data retention at 125°C

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Tested to datasheet specifications at

temperature

■ Top or bottom boot block configurations

— Contact AMD for higher temperature range

devices

available

■ Quality and reliability levels equivalent to

standard packaged components

■ Shipped in waffle pack, surftape, and unsawn

wafer

■ 500 µm die/wafer thickness

Publication# 21257 Rev: D Amendment/+4

Issue Date: June 27, 2001

S U P P L E M E N T

GENERAL DESCRIPTION

The Am29F200B in Known Good Die (KGD) form is a

2 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD

as standard product in die form, tested for functionality

and speed. AMD KGD products have the same reli-

ability and quality as AMD products in packaged form.

grammed) before executing the erase operation. Dur-

ing erase, the device automatically times the erase

pulse widths and verifies proper cell margin.

The host system can detect whether a program or

erase operation is complete by observing the RY/BY#

pin, or by reading the DQ7 (Data# Polling) and DQ6/

DQ2 (toggle) status bits. After a program or erase

cycle has been completed, the device is ready to read

array data or accept another command.

Am29F200B Features

The Am29F200B is organized as 262,144 bytes of 8

bits each or 131,072 words of 16 bits each. The 8-bit

data appears on DQ0-DQ7; the 16-bit data appears on

DQ0-DQ15. This device is designed to be programmed

The sector erase architecture allows memory sectors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully

erased when shipped from the factory.

in-system with the standard system 5.0 Volt V

CC

supply. A 12.0 volt V

erase operations.

is not required for program or

PP

The standard Am29F200B in KGD form offers an

access time of 70, 90, or 120 ns, allowing high-speed

microprocessors to operate without wait states. To

eliminate bus contention the device has separate chip

enable (CE#), write enable (WE#), and output enable

(OE#) controls.

Hardware data protection measures include a low

V_CCdetector that automatically inhibits write opera-

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of the sectors of mem-

ory. This can be achieved via programming equipment.

The device requires only a single 5.0 volt power sup-

ply for both read and write functions. Internally gener-

ated and regulated voltages are provided for the

program and erase operations.

The Erase Suspend feature enables the user to put

erase on hold for any period of time to read data from,

or program data to, any sector that is not selected for

erasure. True background erase can thus be achieved.

The device is entirely command set compatible with the

JEDEC single-power-supply Flash standard. Com-

mands are written to the command register using stan-

dard microprocessor write timings. Register contents

serve as input to an internal state-machine that con-

trols the erase and programming circuitry. Write cycles

also internally latch addresses and data needed for the

programming and erase operations. Reading data out

of the device is similar to reading from other Flash or

EPROM devices.

The hardware RESET# pin terminates any operation

in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the

system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor

to read the boot-up firmware from the Flash memory.

The system can place the device into the standby mode.

Power consumption is greatly reduced in this mode.

AMD’s Flash technology combines years of Flash mem-

ory manufacturing experience to produce the highest lev-

els of quality, reliability and cost effectiveness. The device

electrically erases all bits within a sector simulta-

neously via Fowler-Nordheim tunneling. The data is

programmed using hot electron injection.

Device programming occurs by executing the program

command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that auto-

matically times the program pulse widths and verifies

proper cell margin.

Electrical Specifications

Refer to the Am29F200B data sheet, publication number

21526, for full electrical specifications on the Am29F200B.

Device erasure occurs by executing the erase com-

mand sequence. This initiates the Embedded Erase

algorithm—an internal algorithm that automatically

preprograms the array (if it is not already pro-

PRODUCT SELECTOR GUIDE

Family Part Number

Am29F200B KGD

Speed Option (V

= 5.0 V 10%)

-75 (V

= 5.0 V 5%)

-90

90

35

-120

120

50

CC

Max access time, ns (t_ACC

Max CE# access time, ns (t_CE

Max OE# access time, ns (t_OE

)

70

30

)

2

Am29F200B Known Good Die

S U P P L E M E N T

DIE PHOTOGRAPH

DIE PAD LOCATIONS

9 8 7 6 5 4 3 2 1 42 41 40 3938

35 34

37 36

33

32

10

11

31

12

AMD logo location

131415 16 1718 1920 21 22 23

24 25 262728 2930

Am29F200B Known Good Die

3

S U P P L E M E N T

Pad Center (mils)

PAD DESCRIPTION

Pad Center (millimeters)

Pad

Signal

X

0.00

Y

0.00

X

Y

1

2

V_CC

DQ4

DQ12

DQ5

DQ13

DQ6

DQ14

DQ7

DQ15/A-1

V_SS

0.0000

–0.1727

–0.3251

–0.4724

–0.6223

–0.7696

–0.9220

–1.0693

–1.2192

–1.4148

–1.4605

–1.4503

–1.3030

–1.1659

–1.0160

–0.8788

–0.7315

–0.5918

–0.4420

–0.3048

–0.0610

0.2413

0.7696

0.9093

1.0566

1.1938

1.3437

1.4808

1.6281

1.6383

1.3970

1.2040

1.0541

0.9042

0.7544

0.6071

0.4572

0.3073

0.1575

0.0000

0.0356

–0.1651

–0.4572

–3.1725

–3.1648

–3.1725

–3.2664

–3.1725

–0.4572

–0.1651

0.0965

0.0584

0.0000

–6.80

–12.80

–18.60

–24.50

–30.30

–36.30

–42.10

–48.00

–55.70

–57.50

–57.10

–51.30

–45.90

–40.00

–34.60

–28.80

–23.30

–17.40

–12.00

–2.40

9.50

0.00

3

0.00

4

0.00

5

0.00

6

0.00

7

8

0.00

9

0.00

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

1.40

BYTE#

A16

–6.50

–18.00

–124.90

–124.60

–124.90

–128.60

–124.90

–18.00

–6.50

3.80

A15

A14

A13

A12

A11

A10

A9

A8

WE#

RESET#

RY/BY#

A7

30.30

35.80

41.60

47.00

52.90

58.30

64.10

64.50

55.00

47.40

41.50

35.60

29.70

23.90

18.00

12.10

6.20

A6

A5

A4

A3

A2

A1

A0

CE#

V_SS

OE#

DQ0

DQ8

DQ1

DQ9

DQ2

DQ10

DQ3

DQ11

2.30

0.00

Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.

4

Am29F200B Known Good Die

S U P P L E M E N T

ORDERING INFORMATION

Standard Products

AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is

formed by a combination of the following:

Am29F200B

T

-75

DP

C

1

DIE REVISION

This number refers to the specific AMD manufacturing process and

product technology reflected in this document. It is entered in the

revision field of AMD standard product nomenclature.

TEMPERATURE RANGE

C

I

=

Commercial (0°C to +70°C)

^{Industrial (–40}°C to +85°C)

^{Extended (–55}°C to +125°C)

E

Contact AMD for higher temperature range devices.

PACKAGE TYPE AND

MINIMUM ORDER QUANTITY

DP

DG

DT

=

Waffle Pack

245 die per 5 tray stack

Gel-Pak® Die Tray

486 die per 6 tray stack

Surftape™ (Tape and Reel)

2500 per 7-inch reel

DW

Gel-Pak® Wafer Tray (sawn wafer on frame)

Call AMD sales office for minimum order quantity

SPEED OPTION

See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T

B

=

Top sector

Bottom sector

DEVICE NUMBER/DESCRIPTION

Am29F200B Known Good Die

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory—Die Revision 1

5.0 Volt-only Program and Erase

Valid Combinations

AM29F200BT-75,

AM29F200BB-75

(70 ns, V_CC= 5.0 V 5%)

Valid Combinations

Valid Combinations list configurations planned to be sup-

ported in volume for this device. Consult the local AMD sales

office to confirm availability of specific valid combinations and

to check on newly released combinations.

DPC 1, DPI 1, DPE 1,

DGC 1, DGI 1, DGE 1,

DTC 1, DTI 1, DTE 1,

DWC 1, DWI 1, DWE 1

AM29F200BT-90,

AM29F200BB-90

AM29F200BT-120,

AM29F200BB-120

Am29F200B Known Good Die

5

S U P P L E M E N T

PACKAGING INFORMATION

Surftape Packaging

AMD logo location

Direction of Feed

Orientation relative to

leading edge of tape

and reel

Gel-Pak and Waffle Pack Packaging

Orientation relative to

top left corner of

Gel-Pak

and Waffle Pack

cavity plate

AMD logo location

6

Am29F200B Known Good Die

S U P P L E M E N T

PRODUCT TEST FLOW

Figure 1 provides an overview of AMD’s Known Good

Die test flow. For more detailed information, refer to the

Am29F200B product qualification database supple-

ment for KGD. AMD implements quality assurance pro-

cedures throughout the product test flow. In addition,

an off-line quality monitoring program (QMP) further

guarantees AMD quality standards are met on Known

Good Die products. These QA procedures also allow

AMD to produce KGD products without requiring or

implementing burn-in.

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 1

Data Retention

Bake

24 hours at 250°C

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 2

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 3

Hot Temperature

Speed

Incoming Inspection

Wafer Saw

Die Separation

100% Visual Inspection

Die Pack

Packaging for Shipment

Shipment

Figure 1. AMD KGD Product Test Flow

Am29F200B Known Good Die

7

S U P P L E M E N T

PHYSICAL SPECIFICATIONS

MANUFACTURING INFORMATION

Die dimensions . . . . . . . . . . . . . . 135 mils x 150 mils

. . . . . . . . . . . . . . . . . . . . . . . . . . .3.43 mm x 3.81 mm

Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL

Test . . . . . . . . . . . . . . . . . . . . . . Sunnyvale, CA, USA,

. . . . . . . . . . . . . . . . . . . . . . . . and Penang, Malaysia

Die Thickness . . . . . . . . . . . . . . . . . . . . . . . 19.7 mils

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500 µm

Manufacturing ID (Top Boot) . . . . . . . . . . . . 98480AK

(Bottom Boot) . . . . . . . .98480ABK

Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils

. . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 µm x 115.9 µm

Preparation for Shipment . . . . . . . . Penang, Malaysia

Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S

Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Pad Area Free of Passivation . . . . . . . . . .13.99 mils²

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm²

Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42

Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu

SPECIAL HANDLING INSTRUCTIONS

Processing

Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,

may be grounded (optional)

Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride

Do not expose KGD products to ultraviolet light or

process them at temperatures greater than 250°C.

Failure to adhere to these handling instructions will

result in irreparable damage to the devices. For best

yield, AMD recommends assembly in a Class 10K

clean room with 30% to 60% relative humidity.

DC OPERATING CONDITIONS

V_CC(Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V

Junction Temperature Under Bias:

Commercial, Industrial, and

Extended Temperature Range. . . . .T_J(max) = 130°C

Storage

Store at a maximum temperature of 30°C in a nitrogen-

purged cabinet or vacuum-sealed bag. Observe all

standard ESD handling procedures.

Operating Temperature

Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C

Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C

Contact AMD for higher temperature range devices.

8

Am29F200B Known Good Die

S U P P L E M E N T

returns guidelines, Buyer shall assume all risk of loss

TERMS AND CONDITIONS OF SALE FOR

AMD NON-VOLATILE MEMORY DIE

and shall pay for all freight to AMD's specified location.

The aforementioned provisions do not extend the orig-

inal warranty period of any Known Good Die or

Wafer(s) that has either been repaired or replaced by

AMD.

All transactions relating to unpackaged die or unpack-

aged wafer(s) under this agreement shall be subject to

AMD’s standard terms and conditions of sale, or any

revisions thereof, which revisions AMD reserves the

right to make at any time and from time to time. In the

event of conflict between the provisions of AMD’s stan-

dard terms and conditions of sale and this agreement,

the terms of this agreement shall be controlling.

THIS WARRANTY IS EXPRESSED IN LIEU OF ALL

OTHER WARRANTIES, EXPRESSED OR IMPLIED,

INCLUDING THE IMPLIED WARRANTY OF FITNESS

FOR A PARTICULAR PURPOSE, THE IMPLIED

WARRANTY OF MERCHANTABILITY AND OF ALL

OTHER OBLIGATIONS OR LIABILITIES ON AMD's

PART, AND IT NEITHER ASSUMES NOR AUTHO-

RIZES ANY OTHER PERSON TO ASSUME FOR

AMD ANY OTHER LIABILITIES. THE FOREGOING

CONSTITUTES THE BUYER'S SOLE AND EXCLU-

SIVE REMEDY FOR THE FURNISHING OF DEFEC-

TIVE OR NON CONFORMING KNOWN GOOD

DIEOR WAFER(S) AND AMD SHALL NOT IN ANY

EVENT BE LIABLE FOR INCREASED MANUFAC-

TURING COSTS, DOWNTIME COSTS, DAMAGES

RELATING TO BUYER’S PROCUREMENT OF SUB-

STITUTE DIE OR WAFER(S) (i.e., “COST OF

COVER”), LOSS OF PROFITS, REVENUES OR

GOODWILL, LOSS OF USE OF OR DAMAGE TO

ANY ASSOCIATED EQUIPMENT, OR ANY OTHER

INDIRECT, INCIDENTAL, SPECIAL OR CONSE-

QUENTIAL DAMAGES BY REASON OF THE FACT

THAT SUCH KNOWN GOOD DIE OR WAFER(S)

SHALL HAVE BEEN DETERMINED TO BE DEFEC-

TIVE OR NON CONFORMING.

AMD warrants unpackaged die or unpackaged

wafer(s) of its manufacture (“Known Good Die,” “Die,”

or Wafer(s)) against defective materials or workman-

ship for a period of one (1) year from date of shipment.

This warranty does not extend beyond the first pur-

chaser of said Die or Wafer(s). Buyer assumes full

responsibility to ensure compliance with the appro-

priate handling, assembly and processing of Known

Good Die or Wafer(s) (including but not limited to

proper Die preparation, Die attach, backgrinding, wire

bonding and related assembly and test activities), and

compliance with all guidelines set forth in AMD’s spec-

ifications for Known Good Die or Wafer(s), and AMD

assumes no responsibility for environmental effects on

Known Good Die or Wafer(s) or for any activity of Buyer

or a third party that damages the Die or Wafer(s) due to

improper use, abuse, negligence, improper installation,

improper backgrinding, accident, loss, damage in

transit, or unauthorized repair or alteration by a person

or entity other than AMD (“Warranty Exclusions”).

The liability of AMD under this warranty is limited, at

AMD's option, solely to repair the Die or Wafer(s), to

send replacement Die or Wafer(s), or to make an

appropriate credit adjustment or refund in an amount

not to exceed the original purchase price actually paid

for the Die or Wafer(s) returned to AMD, provided that:

(a) AMD is promptly notified by Buyer in writing during

the applicable warranty period of any defect or noncon-

formity in the Known Good Die or Wafer(s); (b) Buyer

obtains authorization from AMD to return the defective

Die or Wafer(s); (c) the defective Die or Wafer(s) is

returned to AMD by Buyer in accordance with AMD’s

shipping instructions set forth below; and (d) Buyer

shows to AMD’s satisfaction that such alleged defect or

nonconformity actually exists and was not caused by

any of the above-referenced Warranty Exclusions.

Buyer shall ship such defective Die or Wafer(s) to AMD

via AMD’s carrier, collect. Risk of loss will transfer to

AMD when the defective Die or Wafer(s) is provided to

AMD’s carrier. If Buyer fails to adhere to these warranty

Buyer agrees that it will make no warranty representa-

tions to its customers which exceed those given by

AMD to Buyer unless and until Buyer shall agree to

indemnify AMD in writing for any claims which exceed

AMD's warranty.

Am29F200B Known Good Die

9

S U P P L E M E N T

REVISION SUMMARY

Revision A (1997)

Initial release.

Packaging Information

Added section. Moved orientation information from die

photograph section into this section.

Revision B (December 1997)

Formatted for 1998 flash data book.

Revision D+1 (June 14, 1999)

Physical Specifications

Revision C (November 1998)

Global

Corrected bond pad dimensions and deleted Si from

the bond pad metalization specification.

Formatted to match current template. Modified

Am29F200A data sheet for CS39S process technology.

Revision D+2 (July 12, 1999)

Global

Terms and Conditions

The device is now available in the high temperature

range (–55°C to +140°C). T_J(max) for this range is

+145°C.

Replaced warranty with new version.

Revision D (December 1998)

Revision D+3 (November 17, 1999)

Global

Added -75 speed option.

Global

Replaced references to high temperature ratings with a

note to contact AMD for such devices.

Ordering Information

Changed Gel-Pak quantity to 486. Corrected Surftape

reel size to 7 inches.

Revision D+4 (June 27, 2001)

Manufacturing Information

Added Penang, Malaysia as a test facility (ACN2016).

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

10

Am29F200B Known Good Die


型号：	AM29F200BB-90DW1
厂家：	AMD
描述：	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位（ 256千×8位/ 128的K× 16位） CMOS 5.0伏只，分扇区闪存裸片修订版1 闪存
文件：	总11页 (文件大小：523K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AM29F200BB-90DW1 [AMD]

相关型号：

AM29F200BB-90DWC1

AM29F200BB-90DWC1

AM29F200BB-90DWD1

AM29F200BB-90DWE1

AM29F200BB-90DWF1

AM29F200BB-90DWH1

AM29F200BB-90DWI1

AM29F200BB-90DWI1

AM29F200BB-90DWK1

AM29F200BB-90EC

AM29F200BB-90ED

AM29F200BB-90ED