AM29F400BT-120DGE1 [AMD]

4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1; 4兆位（ 512K的×8位/ 256千×16位） CMOS 5.0伏只，引导扇区闪存裸片修订版1


型号：	AM29F400BT-120DGE1
厂家：	AMD
描述：	4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 4兆位（ 512K的×8位/ 256千×16位） CMOS 5.0伏只，引导扇区闪存裸片修订版1 闪存内存集成电路
文件：	总9页 (文件大小：136K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SUPPLEMENT

Am29F400B Known Good Die

4 Megabit (512 K x 8-Bit/256 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Top or bottom boot block configurations

available

— 5.0 volt-only operation for read, erase, and

program operations

■ Embedded Algorithms

— Minimizes system level requirements

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29F400 device

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ High performance

— Acess time as fast as 70 ns

■ Minimum 1,000,000 write cycle per sector

■ Low power consumption (typical values at 5

guaranteed

MHz)

■ Compatibility with JEDEC standards

— 1 µA standby mode current

— Pinout and software compatible with single-

power-supply Flash

— 20 mA read current (byte mode)

— 28 mA read current (word mode)

— 30 mA program/erase current

— Superior inadvertent write protection

■ Data# Polling and toggle bits

■ Flexible sector architecture

— Provides a software method of detecting

program or erase operation completion

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

seven 64 Kbyte sectors (byte mode)

■ Ready/Busy# pin (RY/BY#)

— One 8 Kword, two 4 Kword, one 16 Kword, and

seven 32 Kword sectors (word mode)

— Provides a hardware method of detecting

program or erase cycle completion

— Supports full chip erase

■ Erase Suspend/Erase Resume

— Sector Protection features:

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

■ Hardware reset pin (RESET#)

Sectors can be locked via programming

equipment

— Hardware method to reset the device to reading

array data

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

Publication# 21258 Rev: B Amendment/+1

Issue Date: April 1998

S U P P L E M E N T

GENERAL DESCRIPTION

The Am29F400B in Known Good Die (KGD) form is a

4 Mbit, 5.0 volt-only Flash memory. AMD defines KGD

as standard product in die form, tested for functionality

and speed. AMD KGD products have the same relia-

bility and quality as AMD products in packaged form.

preprograms the array (if it is not already pro-

grammed) before executing the erase operation. Dur-

ing erase, the device automatically times the erase

pulse widths and verifies proper cell margin.

The host system can detect whether a program or

erase operation is complete by observing the RY/BY#

pin, or by reading the DQ7 (Data# Polling) and DQ6

(toggle) status bits. After a program or erase cycle has

been completed, the device is ready to read array data

or accept another command.

Am29F400B Features

The Am29F400B is a 4 Mbit, 5.0 volt-only Flash

memory organized as 524,288 bytes or 262,144 words.

The word-wide data (x16) appears on DQ15–DQ0; the

byte-wide (x8) data appears on DQ7–DQ0. This device

is designed to be programmed in-system with the

standard system 5.0 volt V_CCsupply. A 12.0 V V_PPis

not required for write or erase operations. The device

can also be programmed in standard EPROM pro-

grammers.

The sector erase architecture allows memory sectors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully

erased when shipped from the factory.

Hardware data protection measures include a low

This device is manufactured using AMD’s 0.35 µm

process technology, and offers all the features and ben-

efits of the Am29F400, which was manufactured using

0.5 µm process technology.

detector that automatically inhibits write opera-

V_CC

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of the sectors of mem-

ory. This can be achieved via programming equipment.

To eliminate bus contention the device has separate

chip enable (CE#), write enable (WE#) and output

enable (OE#) controls.

The Erase Suspend feature enables the user to put

erase on hold for any period of time to read data from,

or program data to, any sector that is not selected for

erasure. True background erase can thus be achieved.

The device requires only a single 5.0 volt power sup-

ply for both read and write functions. Internally gener-

ated and regulated voltages are provided for the

program and erase operations.

The hardware RESET# pin terminates any operation

in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the

system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor

to read the boot-up firmware from the Flash memory.

The device is entirely command set compatible with the

JEDEC single-power-supply Flash standard. Com-

mands are written to the command register using

standard microprocessor write timings. Register con-

tents serve as input to an internal state-machine that

controls the erase and programming circuitry. Write

cycles also internally latch addresses and data needed

for the programming and erase operations. Reading

data out of the device is similar to reading from other

Flash or EPROM devices.

The system can place the device into the standby mode.

Power consumption is greatly reduced in this mode.

AMD’s Flash technology combines years of Flash

memory manufacturing experience to produce the

highest levels of quality, reliability and cost effectiveness.

The device electrically erases all bits within a sector

simultaneously via Fowler-Nordheim tunneling. The

data is programmed using hot electron injection.

Device programming occurs by executing the program

command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that auto-

matically times the program pulse widths and verifies

proper cell margin.

ELECTRICAL SPECIFICATIONS

Refer to the Am29F400B data sheet, document

number 21505, for full electrical specifications on the

Am29F400B in KGD form.

Device erasure occurs by executing the erase com-

mand sequence. This initiates the Embedded Erase

algorithm—an internal algorithm that automatically

Am29F400B Known Good Die

S U P P L E M E N T

PRODUCT SELECTOR GUIDE

Family Part Number

Am29F400B KGD

= 5.0 V ± 5%

-75

Speed Option

= 5.0 V ± 10%

-90

-120

120

Max access time, ns (t

)

ACC

Max CE# access time, ns (t

)

Max OE# access time, ns (t

)

DIE PHOTOGRAPH

DIE PAD LOCATIONS

Orientation relative

to leading edge of

tape and reel

2 1 43 42 41 40 39 38 37 36 35

AMD logo location

13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31

Orientation relative

to top left corner of

Gel-Pak

Am29F400B Known Good Die

S U P P L E M E N T

Pad Center (mils)

PAD DESCRIPTION

Pad Center (millimeters)

Pad

Signal

0.00

0.0000

0.1835

0.3417

0.4977

0.6559

0.8119

0.9701

1.1261

1.2843

1.4887

1.5367

1.5274

1.3714

1.2264

1.0704

0.9254

0.7694

0.6244

0.4659

0.3209

0.0646

–0.2538

–0.6546

–0.8106

–0.9556

–1.1116

–1.2566

–1.4126

–1.5576

–1.7136

–1.7229

–1.4691

–1.2664

–1.1082

–0.9522

–0.7940

–0.6380

–0.4798

–0.3238

–0.1656

0.0000

–0.0361

0.1738

0.4823

4.5990

4.5924

4.5990

4.6998

4.5990

0.4823

0.1738

–0.1015

–0.0608

0.0000

DQ4

DQ12

DQ5

7.22

0.00

13.45

19.59

25.82

31.96

38.19

44.33

50.56

58.61

60.50

60.13

53.99

48.28

42.14

36.43

30.29

24.58

18.34

12.63

2.54

0.00

DQ13

DQ6

0.00

DQ14

DQ7

0.00

DQ15/A-1

0.00

–1.42

6.84

BYTE#

A16

A15

A14

A13

A12

A11

A10

18.99

181.06

180.80

181.06

185.03

181.06

18.99

6.84

WE#

RESET#

RY/BY#

A17

–10.00

–25.79

–31.92

–37.63

–43.77

–49.48

–55.62

–61.33

–67.47

–67.84

–57.84

–49.86

–43.63

–37.49

–31.26

–25.12

–18.89

–12.75

–6.52

CE#

–4.00

–2.39

0.00

OE#

DQ0

DQ8

DQ1

DQ9

DQ2

DQ10

DQ3

DQ11

0.00

Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.

Am29F400B Known Good Die

S U P P L E M E N T

ORDERING INFORMATION

Standard Products

AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is

formed by a combination of the following:

-75

Am29F400B

DIE REVISION

This number refers to the specific AMD manufacturing

process and product technology reflected in this

document. It is entered in the revision field of AMD

standard product nomenclature.

TEMPERATURE RANGE

C = Commercial (0°C to +70°C)

= Industrial (–40°C to +85°C)

E = Extended (–55°C to +125°C)

PACKAGE TYPE AND

MINIMUM ORDER QUANTITY

Waffle Pack

180 die per 5 tray stack

DG = Gel-Pak Die Tray

378 die per 6 tray stack

Surftape™ (Tape and Reel)

1800 per 7-inch reel

DW= Gel-Pak Wafer Tray (sawn wafer on frame)

Call AMD sales office for minimum order

quantity

SPEED OPTION

See Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T = Top sector

B = Bottom sector

DEVICE NUMBER/DESCRIPTION

Am29F400B Known Good Die

4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory—Die Revision 1

5.0 Volt-only Program and Erase

Valid Combinations

Valid Combinations list configurations planned to be sup-

ported in volume for this device. Consult the local AMD sales

office to confirm availability of specific valid combinations and

Am29F400BT-75

Am29F400BB-75

DPC 1, DPI 1, DPE 1,

DGC 1, DGI 1, DGE 1,

DTC 1, DTI 1, DTE 1,

DWC 1, DWI 1, DWE 1

to check on newly released combinations.

Am29F400BT-90

Am29F400BB-90

Am29F400BT-120

Am29F400BB-120

Am29F400B Known Good Die

S U P P L E M E N T

PRODUCT TEST FLOW

Figure 1 provides an overview of AMD’s Known Good

Die test flow. For more detailed information, refer to the

Am29F400B product qualification database supple-

ment for KGD. AMD implements quality assurance pro-

cedures throughout the product test flow. In addition,

an off-line quality monitoring program (QMP) further

guarantees AMD quality standards are met on Known

Good Die products. These QA procedures also allow

AMD to produce KGD products without requiring or

implementing burn-in.

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 1

Data Retention

Bake

24 hours at 250°C

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 2

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 3

High Temperature

Speed

Incoming Inspection

Wafer Saw

Die Separation

100% Visual Inspection

Die Pack

Packaging for Shipment

Shipment

Figure 1. AMD KGD Product Test Flow

Am29F400B Known Good Die

S U P P L E M E N T

PHYSICAL SPECIFICATIONS

MANUFACTURING INFORMATION

Die dimensions . . . . . . . . . 141.34 mils x 207.48 mils

. . . . . . . . . . . . . . . . . . . . . . . . . . .3.59 mm x 5.27 mm

Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL

Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC

Die Thickness. . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils

Manufacturing ID (Top Boot) . . . . . . . . . . . . 98965AK

(Bottom Boot) . . . . . . . .98965ABK

Bond Pad Size . . . . . . . . . . . . . . 3.94 mils x 3.94 mils

. . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 µm x 100 µm

Preparation for Shipment . . . . . . . . Penang, Malaysia

Fabrication Process . . . . . . . . . . . . . . . . . . . . . .CS39

Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Pad Area Free of Passivation . . . . . . . . . .15.52 mils²

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 µm²

Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43

Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Cu/Si

SPECIAL HANDLING INSTRUCTIONS

Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,

may be grounded (optional)

Processing

Do not expose KGD products to ultraviolet light or

process them at temperatures greater than 250°C.

Failure to adhere to these handling instructions will

result in irreparable damage to the devices. For best

yield, AMD recommends assembly in a Class 10K

clean room with 30% to 60% relative humidity.

Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride

DC OPERATING CONDITIONS

V_CC(Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V

Junction Temperature Under Bias . .T_J(max) = 130°C

Storage

Operating Temperature

Store at a maximum temperature of 30°C in a nitrogen-

purged cabinet or vacuum-sealed bag. Observe all

standard ESD handling procedures.

Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C

Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C

Am29F400B Known Good Die

S U P P L E M E N T

THIS WARRANTY IS EXPRESSED IN LIEU OF ALL

TERMS AND CONDITIONS OF SALE FOR

AMD NON-VOLATILE MEMORY DIE

OTHER WARRANTIES, EXPRESSED OR IMPLIED,

INCLUDING THE IMPLIED WARRANTY OF FITNESS

FOR A PARTICULAR PURPOSE, THE IMPLIED

WARRANTY OF MERCHANTABILITY AND OF ALL

OTHER OBLIGATIONS OR LIABILITIES ON AMD’S

PART, AND IT NEITHER ASSUMES NOR AUTHOR-

IZES ANY OTHER PERSON TO ASSUME FOR AMD

ANY OTHER LIABILITIES. THE FOREGOING CON-

STITUTES THE BUYERS SOLE AND EXCLUSIVE

REMEDY FOR THE FURNISHING OF DEFECTIVE

OR NON CONFORMING ARTICLES AND AMD

SHALL NOT IN ANY EVENT BE LIABLE FOR

DAMAGES BY REASON OF FAILURE OF ANY

PRODUCT TO FUNCTION PROPERLY OR FOR ANY

SPECIAL, INDIRECT, CONSEQUENTIAL, INCI-

DENTAL OR EXEMPLARY DAMAGES, INCLUDING

BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS OF

USE OR COST OF LABOR BY REASON OF THE

FACT THAT SUCH ARTICLES SHALL HAVE BEEN

DEFECTIVE OR NON CONFORMING.

All transactions relating to AMD Products under this

agreement shall be subject to AMD’s standard terms

and conditions of sale, or any revisions thereof, which

revisions AMD reserves the right to make at any time

and from time to time. In the event of conflict between

the provisions of AMD’s standard terms and conditions

of sale and this agreement, the terms of this agreement

shall be controlling.

AMD warrants articles of its manufacture against

defective materials or workmanship for a period of

ninety (90) days from date of shipment. This warranty

does not extend beyond AMD’s customer, and does not

extend to die which has been affixed onto a board or

substrate of any kind. The liability of AMD under this

warranty is limited, at AMD’s option, solely to repair or

to replacement with equivalent articles, or to make an

appropriate credit adjustment not to exceed the original

sales price, for articles returned to AMD, provided that:

(a) The Buyer promptly notifies AMD in writing of each

and every defect or nonconformity in any article for

which Buyer wishes to make a warranty claim against

AMD; (b) Buyer obtains authorization from AMD to

return the article; (c) the article is returned to AMD,

transportation charges paid by AMD, F.O.B. AMD’s fac-

tory; and (d) AMD’s examination of such article dis-

closes to its satisfaction that such alleged defect or

nonconformity actually exists and was not caused by

negligence, misuse, improper installation, accident or

unauthorized repair or alteration by an entity other than

AMD. The aforementioned provisions do not extend the

original warranty period of any article which has either

been repaired or replaced by AMD.

Buyer agrees that it will make no warranty representa-

tions to its customers which exceed those given by

AMD to Buyer unless and until Buyer shall agree to

indemnify AMD in writing for any claims which exceed

AMD’s warranty. Buyer assumes all responsibility for

successful die prep, die attach and wire bonding proc-

esses. Due to the unprotected nature of the AMD Prod-

ucts which are the subject hereof, AMD assumes no

responsibility for environmental effects on die.

AMD products are not designed or authorized for use

as components in life support appliances, devices or

systems where malfunction of a product can reason-

ably be expected to result in a personal injury. Buyer’s

use of AMD products for use in life support applications

is at Buyer’s own risk and Buyer agrees to fully indem-

nify AMD for any damages resulting in such use or sale.

Am29F400B Known Good Die

S U P P L E M E N T

REVISION SUMMARY

Revision B

Global

Added -75 and -90 speed options.

Formatted to match current template. Updated Distinc-

tive Characteristics and General Description sections

using the current main data sheet. Updated for CS39

process technology.

Pad Description

Corrected coordinates for pads 2, 19, 22, 35, 40, and

42.

Revision B+1

Physical Specifications

Distinctive Characteristics

Changed die thickness specification to ~20 mils.

The minimum guarante per sector is now 1 million

cycles.

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

Am29F400B Known Good Die

AM29F400BT-120DGE1 [AMD]

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