AM29F400BT-75DGE [AMD]
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1; 4兆位( 512K的×8位/ 256千×16位) CMOS 5.0伏只,引导扇区闪存裸片修订版1型号: | AM29F400BT-75DGE |
厂家: | AMD |
描述: | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
文件: | 总9页 (文件大小:136K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SUPPLEMENT
Am29F400B Known Good Die
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Top or bottom boot block configurations
available
— 5.0 volt-only operation for read, erase, and
program operations
■ Embedded Algorithms
— Minimizes system level requirements
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
■ Manufactured on 0.35 µm process technology
— Compatible with 0.5 µm Am29F400 device
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ High performance
— Acess time as fast as 70 ns
■ Minimum 1,000,000 write cycle per sector
■ Low power consumption (typical values at 5
guaranteed
MHz)
■ Compatibility with JEDEC standards
— 1 µA standby mode current
— Pinout and software compatible with single-
power-supply Flash
— 20 mA read current (byte mode)
— 28 mA read current (word mode)
— 30 mA program/erase current
— Superior inadvertent write protection
■ Data# Polling and toggle bits
■ Flexible sector architecture
— Provides a software method of detecting
program or erase operation completion
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
■ Ready/Busy# pin (RY/BY#)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Provides a hardware method of detecting
program or erase cycle completion
— Supports full chip erase
■ Erase Suspend/Erase Resume
— Sector Protection features:
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
■ Hardware reset pin (RESET#)
Sectors can be locked via programming
equipment
— Hardware method to reset the device to reading
array data
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Publication# 21258 Rev: B Amendment/+1
Issue Date: April 1998
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29F400B in Known Good Die (KGD) form is a
4 Mbit, 5.0 volt-only Flash memory. AMD defines KGD
as standard product in die form, tested for functionality
and speed. AMD KGD products have the same relia-
bility and quality as AMD products in packaged form.
preprograms the array (if it is not already pro-
grammed) before executing the erase operation. Dur-
ing erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
Am29F400B Features
The Am29F400B is a 4 Mbit, 5.0 volt-only Flash
memory organized as 524,288 bytes or 262,144 words.
The word-wide data (x16) appears on DQ15–DQ0; the
byte-wide (x8) data appears on DQ7–DQ0. This device
is designed to be programmed in-system with the
standard system 5.0 volt VCC supply. A 12.0 V VPP is
not required for write or erase operations. The device
can also be programmed in standard EPROM pro-
grammers.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
This device is manufactured using AMD’s 0.35 µm
process technology, and offers all the features and ben-
efits of the Am29F400, which was manufactured using
0.5 µm process technology.
detector that automatically inhibits write opera-
VCC
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved via programming equipment.
To eliminate bus contention the device has separate
chip enable (CE#), write enable (WE#) and output
enable (OE#) controls.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The device requires only a single 5.0 volt power sup-
ply for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The
data is programmed using hot electron injection.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin.
ELECTRICAL SPECIFICATIONS
Refer to the Am29F400B data sheet, document
number 21505, for full electrical specifications on the
Am29F400B in KGD form.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
2
Am29F400B Known Good Die
S U P P L E M E N T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29F400B KGD
V
V
= 5.0 V ± 5%
-75
CC
CC
Speed Option
= 5.0 V ± 10%
-90
90
90
35
-120
120
120
50
Max access time, ns (t
)
70
70
30
ACC
Max CE# access time, ns (t
)
CE
Max OE# access time, ns (t
)
OE
DIE PHOTOGRAPH
DIE PAD LOCATIONS
Orientation relative
to leading edge of
tape and reel
9
8
7
6
5
4
3
2 1 43 42 41 40 39 38 37 36 35
34
33
10
11
12
32
AMD logo location
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
Orientation relative
to top left corner of
Gel-Pak
Am29F400B Known Good Die
3
S U P P L E M E N T
Pad Center (mils)
PAD DESCRIPTION
Pad Center (millimeters)
Pad
Signal
X
0.00
Y
0.00
X
Y
1
V
0.0000
0.1835
0.3417
0.4977
0.6559
0.8119
0.9701
1.1261
1.2843
1.4887
1.5367
1.5367
1.5274
1.3714
1.2264
1.0704
0.9254
0.7694
0.6244
0.4659
0.3209
0.0646
–0.2538
–0.6546
–0.8106
–0.9556
–1.1116
–1.2566
–1.4126
–1.5576
–1.7136
–1.7229
–1.7229
–1.7229
–1.4691
–1.2664
–1.1082
–0.9522
–0.7940
–0.6380
–0.4798
–0.3238
–0.1656
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
–0.0361
0.1738
0.4823
4.5990
4.5990
4.5990
4.5990
4.5990
4.5990
4.5924
4.5990
4.5990
4.6998
4.6998
4.5990
4.5990
4.5990
4.5990
4.5990
4.5990
4.5990
4.5990
0.4823
0.1738
–0.1015
–0.0608
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
CC
2
DQ4
DQ12
DQ5
7.22
0.00
3
13.45
19.59
25.82
31.96
38.19
44.33
50.56
58.61
60.50
60.50
60.13
53.99
48.28
42.14
36.43
30.29
24.58
18.34
12.63
2.54
0.00
4
0.00
5
DQ13
DQ6
0.00
6
0.00
7
DQ14
DQ7
0.00
8
0.00
9
DQ15/A-1
0.00
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
V
–1.42
6.84
SS
BYTE#
A16
A15
A14
A13
A12
A11
A10
A9
18.99
181.06
181.06
181.06
181.06
181.06
181.06
180.80
181.06
181.06
185.03
185.03
181.06
181.06
181.06
181.06
181.06
181.06
181.06
181.06
18.99
6.84
A8
WE#
RESET#
RY/BY#
A17
A7
–10.00
–25.79
–31.92
–37.63
–43.77
–49.48
–55.62
–61.33
–67.47
–67.84
–67.84
–67.84
–57.84
–49.86
–43.63
–37.49
–31.26
–25.12
–18.89
–12.75
–6.52
A6
A5
A4
A3
A2
A1
A0
CE#
V
–4.00
–2.39
0.00
SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
0.00
0.00
0.00
0.00
0.00
0.00
0.00
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
4
Am29F400B Known Good Die
S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
T
-75
DP
Am29F400B
C
1
DIE REVISION
This number refers to the specific AMD manufacturing
process and product technology reflected in this
document. It is entered in the revision field of AMD
standard product nomenclature.
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I
= Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE AND
MINIMUM ORDER QUANTITY
DP
=
Waffle Pack
180 die per 5 tray stack
®
DG = Gel-Pak Die Tray
378 die per 6 tray stack
DT
=
Surftape™ (Tape and Reel)
1800 per 7-inch reel
®
DW= Gel-Pak Wafer Tray (sawn wafer on frame)
Call AMD sales office for minimum order
quantity
SPEED OPTION
See Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T = Top sector
B = Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29F400B Known Good Die
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory—Die Revision 1
5.0 Volt-only Program and Erase
Valid Combinations
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
Am29F400BT-75
Am29F400BB-75
DPC 1, DPI 1, DPE 1,
DGC 1, DGI 1, DGE 1,
DTC 1, DTI 1, DTE 1,
DWC 1, DWI 1, DWE 1
to check on newly released combinations.
Am29F400BT-90
Am29F400BB-90
Am29F400BT-120
Am29F400BB-120
Am29F400B Known Good Die
5
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29F400B product qualification database supple-
ment for KGD. AMD implements quality assurance pro-
cedures throughout the product test flow. In addition,
an off-line quality monitoring program (QMP) further
guarantees AMD quality standards are met on Known
Good Die products. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in.
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 1
Data Retention
Bake
24 hours at 250°C
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 2
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 3
High Temperature
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Packaging for Shipment
Shipment
Figure 1. AMD KGD Product Test Flow
6
Am29F400B Known Good Die
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die dimensions . . . . . . . . . 141.34 mils x 207.48 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . .3.59 mm x 5.27 mm
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL
Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC
Die Thickness. . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils
Manufacturing ID (Top Boot) . . . . . . . . . . . . 98965AK
(Bottom Boot) . . . . . . . .98965ABK
Bond Pad Size . . . . . . . . . . . . . . 3.94 mils x 3.94 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 µm x 100 µm
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . . .CS39
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pad Area Free of Passivation . . . . . . . . . .15.52 mils2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 µm2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Cu/Si
SPECIAL HANDLING INSTRUCTIONS
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
VCC (Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V
Junction Temperature Under Bias . .TJ (max) = 130°C
Storage
Operating Temperature
Store at a maximum temperature of 30°C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C
Am29F400B Known Good Die
7
S U P P L E M E N T
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’S
PART, AND IT NEITHER ASSUMES NOR AUTHOR-
IZES ANY OTHER PERSON TO ASSUME FOR AMD
ANY OTHER LIABILITIES. THE FOREGOING CON-
STITUTES THE BUYERS SOLE AND EXCLUSIVE
REMEDY FOR THE FURNISHING OF DEFECTIVE
OR NON CONFORMING ARTICLES AND AMD
SHALL NOT IN ANY EVENT BE LIABLE FOR
DAMAGES BY REASON OF FAILURE OF ANY
PRODUCT TO FUNCTION PROPERLY OR FOR ANY
SPECIAL, INDIRECT, CONSEQUENTIAL, INCI-
DENTAL OR EXEMPLARY DAMAGES, INCLUDING
BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS OF
USE OR COST OF LABOR BY REASON OF THE
FACT THAT SUCH ARTICLES SHALL HAVE BEEN
DEFECTIVE OR NON CONFORMING.
All transactions relating to AMD Products under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants articles of its manufacture against
defective materials or workmanship for a period of
ninety (90) days from date of shipment. This warranty
does not extend beyond AMD’s customer, and does not
extend to die which has been affixed onto a board or
substrate of any kind. The liability of AMD under this
warranty is limited, at AMD’s option, solely to repair or
to replacement with equivalent articles, or to make an
appropriate credit adjustment not to exceed the original
sales price, for articles returned to AMD, provided that:
(a) The Buyer promptly notifies AMD in writing of each
and every defect or nonconformity in any article for
which Buyer wishes to make a warranty claim against
AMD; (b) Buyer obtains authorization from AMD to
return the article; (c) the article is returned to AMD,
transportation charges paid by AMD, F.O.B. AMD’s fac-
tory; and (d) AMD’s examination of such article dis-
closes to its satisfaction that such alleged defect or
nonconformity actually exists and was not caused by
negligence, misuse, improper installation, accident or
unauthorized repair or alteration by an entity other than
AMD. The aforementioned provisions do not extend the
original warranty period of any article which has either
been repaired or replaced by AMD.
Buyer agrees that it will make no warranty representa-
tions to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty. Buyer assumes all responsibility for
successful die prep, die attach and wire bonding proc-
esses. Due to the unprotected nature of the AMD Prod-
ucts which are the subject hereof, AMD assumes no
responsibility for environmental effects on die.
AMD products are not designed or authorized for use
as components in life support appliances, devices or
systems where malfunction of a product can reason-
ably be expected to result in a personal injury. Buyer’s
use of AMD products for use in life support applications
is at Buyer’s own risk and Buyer agrees to fully indem-
nify AMD for any damages resulting in such use or sale.
8
Am29F400B Known Good Die
S U P P L E M E N T
REVISION SUMMARY
Revision B
Global
Added -75 and -90 speed options.
Formatted to match current template. Updated Distinc-
tive Characteristics and General Description sections
using the current main data sheet. Updated for CS39
process technology.
Pad Description
Corrected coordinates for pads 2, 19, 22, 35, 40, and
42.
Revision B+1
Physical Specifications
Distinctive Characteristics
Changed die thickness specification to ~20 mils.
The minimum guarante per sector is now 1 million
cycles.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Am29F400B Known Good Die
9
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