AM29LV160MT85WAI [AMD]
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory; 16兆位(2M ×8位/ 1的M× 16位)的MirrorBit TM 3.0伏只引导扇区闪存型号: | AM29LV160MT85WAI |
厂家: | AMD |
描述: | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory |
文件: | 总63页 (文件大小:1389K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Am29LV160M
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not available for designs. For new and current designs,
S29GL016A supersedes Am29LV160M and is the factory-recommended migration path. Please refer
to the S29GL016A datasheet for specifications and ordering information. Availability of this docu-
ment is retained for reference and historical purposes only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 25974 Revision B Amendment 5 Issue Date January 31, 2007
THIS PAGE LEFT INTENTIONALLY BLANK.
Am29LV160M
TM
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit
3.0 Volt-only Boot Sector Flash Memory
This product has been retired and is not available for designs. For new and current designs, S29GL016A supersedes Am29LV160M and is the factory-recom-
mended migration path. Please refer to the S29GL016A datasheet for specifications and ordering information. Availability of this document is retained for
reference and historical purposes only.
Distinctive Characteristics
Low power consumption (typical values at 5 MHz)
Architectural Advantages
— 400 nA standby mode current
— 15 mA read current
Single power supply operation
— 3 V for read, erase, and program operations
Manufactured on 0.23 µm MirrorBitTM process
technology
— 40 mA program/erase current
— 400 nA Automatic Sleep mode current
— Fully compatible with Am29LV160D device
Package options
Secured Silicon Sector region
— 48-ball Fine-pitch BGA
— 64-ball Fortified BGA
— 48-pin TSOP
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
Software Features
— May be programmed and locked at the factory or by
the customer
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-
one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and thirty-
one 32 Kword sectors (word mode)
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
Hardware Features
Top or bottom boot block configurations available
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125°C
— Sector Protection: hardware-level method of
preventing write operations within a sector
— Temporary Sector Unprotect: VID-level method of
changing code in locked sectors
Performance Characteristics
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
High performance
— Access times as fast as 70 ns
— 0.7 s typical sector erase time
Publication Number 25974 Revision B Amendment 5 Issue Date January 31, 2007
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications
due to changes in technical specifications.
D a t a S h e e t
General Description
The Am29LV160M is a 16 Mbit, 3.0 Volt-only Flash memory organized as
2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch
BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16)
appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The de-
vice requires only a single 3.0 volt power supply for both read and write
functions, designed to be programmed in-system with the standard system 3.0
volt VCC supply. The device can also be programmed in standard
EPROM programmers.
The device offers access times of 70, 85, 90, and 100 ns. To eliminate bus conten-
tion the device contains separate chip enable (CE#), write enable (WE#) and
output enable (OE#) controls.
The device is entirely command set compatible with the JEDEC single-power-
supply Flash standard. Commands are written to the device using standard
microprocessor write timing. Write cycles also internally latch addresses and data
needed for the programming and erase operations.
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through command sequences.
Once a program or erase operation starts, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy#
(RY/BY#) output to determine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces command sequence overhead
by requiring only two write cycles to program data instead of four.
Hardware data protection measures include a low VCC detector that automati-
cally inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase operations in any combina-
tion of sectors of memory. This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature allows the host system to pause an
erase operation in a given sector to read or program any other sector and then
complete the erase operation. The Program Suspend/Program Resume fea-
ture enables the host system to pause a program operation in a given sector to
read any other sector and then complete the program operation.
The hardware RESET# pin terminates any operation in progress and resets the
device, after which it is then ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would thus also reset the de-
vice, enabling the host system to read boot-up firmware from the Flash memory
device.
The device reduces power consumption in the standby mode when it detects
specific voltage levels on CE# and RESET#, or when addresses are stable for a
specified period of time.
The Secured Silicon Sector provides a 128-word/256-byte area for code or
data that can be permanently protected. Once this sector is protected, no further
changes within the sector can occur.
MirrorBit flash technology combines years of Flash memory manufacturing expe-
rience to produce the highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector simultaneously via hot-hole
assisted erase. The data is programmed using hot electron injection.
2
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Table of Contents
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 10
Table 1. Am29LV160M Device Bus Operations .......................10
Word/Byte Configuration .................................................................. 10
Requirements for Reading Array Data ........................................... 10
Writing Commands/Command Sequences .....................................11
Program and Erase Operation Status ...............................................11
Standby Mode ...........................................................................................11
Automatic Sleep Mode .........................................................................12
RESET#: Hardware Reset Pin .............................................................12
Output Disable Mode ...........................................................................12
Table 2. Sector Address Tables (Am29LV160MT) ...................13
Table 3. Sector Address Tables (Am29LV160MB) ...................14
DQ7: Data# Polling ..............................................................................33
Figure 7. Data# Polling Algorithm....................................... 34
RY/BY#: Ready/Busy# ..........................................................................34
DQ6: Toggle Bit I ..................................................................................35
DQ2: Toggle Bit II .................................................................................35
Reading Toggle Bits DQ6/DQ2 ........................................................36
Figure 8. Toggle Bit Algorithm............................................ 37
DQ5: Exceeded Timing Limits ..........................................................37
DQ3: Sector Erase Timer ...................................................................38
Table 12. Write Operation Status ........................................38
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . .39
Figure 9. Maximum Negative Overshoot Waveform ............... 39
Figure 10. Maximum Positive Overshoot Waveform ............... 39
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 39
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 40
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 11. Test Setup........................................................ 41
Table 13. Test Specifications ..............................................41
Figure 12. Input Waveforms and Measurement Levels ........... 41
Autoselect Mode ....................................................................................15
Table 4. Autoselect Codes (High Voltage Method) ..................15
Sector Protection/Unprotection .......................................................15
Temporary Sector Unprotect ............................................................16
Figure 1. Temporary Sector Unprotect Operation................... 16
Figure 2. In-System Single High Voltage Sector Protect/
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .42
Read Operations ...................................................................................42
Figure 13. Read Operations Timings.................................... 42
Hardware Reset (RESET#) .................................................................43
Figure 14. RESET# Timings ............................................... 43
Word/Byte Configuration (BYTE#) ..............................................44
Figure 15. BYTE# Timings for Read Operations..................... 44
Figure 16. BYTE# Timings for Write Operations .................... 44
Erase/Program Operations ................................................................45
Figure 17. Program Operation Timings ................................ 46
Figure 18. Chip/Sector Erase Operation Timings ................... 47
Figure 19. Data# Polling Timings
(During Embedded Algorithms) .......................................... 48
Figure 20. Toggle Bit Timings
Unprotect Algorithms ........................................................ 17
Secured Silicon Sector Flash Memory Region .............................. 18
Table 5. Secured Silicon Sector Addressing ...........................18
Customer Lockable: Secured Silicon Sector NOT Programmed
or Protected At the Factory .............................................................. 18
Figure 3. Secured Silicon Sector Protect Verify...................... 19
Common Flash Memory Interface (CFI) ....................................... 20
Table 6. CFI Query Identification String ...............................20
Table 7. System Interface String .........................................21
Table 8. Device Geometry Definition ....................................21
Table 9. Primary Vendor-Specific Extended Query .................22
(During Embedded Algorithms) .......................................... 48
Figure 21. DQ2 vs. DQ6 for Erase and
Erase Suspend Operations................................................. 49
Figure 22. Temporary Sector Unprotect/Timing Diagram........ 49
Figure 23. Sector Protect/Unprotect Timing Diagram............. 50
Figure 24. Alternate CE# Controlled Write Operation Timings . 52
Hardware Data Protection ................................................................22
Low VCC Write Inhibit ........................................................................22
Write Pulse “Glitch” Protection ......................................................22
Logical Inhibit ..........................................................................................23
Power-Up Write Inhibit ......................................................................23
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 23
Reading Array Data ..............................................................................23
Reset Command ....................................................................................23
Autoselect Command Sequence ......................................................24
Word/Byte Program Command Sequence ...................................24
Erase and Programming Performance . . . . . . . . .53
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 53
TSOP Pin and BGA Package Capacitance . . . . . 53
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . .54
TS 048—48-Pin Standard TSOP ......................................................54
TSR048—48-Pin Reverse TSOP ......................................................55
FBA048—48-Ball Fine-Pitch Ball Grid Array (BGA)
6 x 8 mm Package .................................................................................56
LAA064—64-Ball Fortified Ball Grid Array (BGA)
13 x 11 mm Package ................................................................................57
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 58
Unlock Bypass Command Sequence ...............................................25
Figure 4. Program Operation .............................................. 26
Chip Erase Command Sequence ......................................................26
Sector Erase Command Sequence ...................................................27
Erase Suspend/Erase Resume Commands .....................................27
Figure 5. Erase Operation .................................................. 29
Program Suspend/Program Resume Command Sequence .......29
Figure 6. Program Suspend/Program Resume ....................... 30
Command Definitions Tables .............................................................31
Write Operation Status . . . . . . . . . . . . . . . . . . . . 33
January 31, 2007 25974B5
Am29LV160M
3
D a t a S h e e t
Product Selector Guide
Family Part Number
Am29LV160M
85
70R
(Note 2)
Regulated Voltage Range: VCC = 3.0–3.6 V
Speed Option
Full Voltage Range: VCC = 2.7–3.6 V
)
(Note 2)
90
90
90
35
100
100
100
50
Max access time, ns (tACC
70
70
30
85
85
35
Max CE# access time, ns (tCE
)
Max OE# access time, ns (tOE
)
Notes:
1. See “AC Characteristics” on page 42 for full specifications.
2. Contact sales office or representative for availability and ordering information.
Block Diagram
DQ15–DQ0 (A-1)
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
Input/Output
Buffers
RESET#
State
Control
WE#
BYTE#
Command
Register
PGM Voltage
Generator
Data
Latch
Chip Enable
Output Enable
Logic
STB
CE#
OE#
Y-Decoder
Y-Gating
STB
VCC Detector
Timer
Cell Matrix
X-Decoder
A19–A0
4
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Connection Diagrams
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
1
2
3
4
5
6
7
8
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
WE#
RESET#
NC
Standard TSOP
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
OE#
VSS
CE#
A0
1
2
3
4
5
6
7
8
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
48
A16
BYTE#
VSS
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
WE#
RESET#
NC
VCC
Reverse TSOP
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
OE#
VSS
CE#
A0
January 31, 2007 25974B5
Am29LV160M
5
D a t a S h e e t
Connection Diagrams
Fine-pitch BGA
Top View, Balls Facing Down
A6
B6
C6
D6
E6
F6
G6
H6
A13
A12
A14
A15
A16
BYTE# DQ15/A-1 VSS
A5
A9
B5
A8
C5
D5
E5
F5
G5
H5
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
B4
C4
NC
D4
E4
F4
G4
H4
WE#
RESET#
A19
DQ5
DQ12
VCC
DQ4
A3
B3
NC
C3
D3
NC
E3
F3
G3
H3
RY/BY#
A18
DQ2
DQ10
DQ11
DQ3
A2
A7
B2
C2
A6
D2
A5
E2
F2
G2
H2
A17
DQ0
DQ8
DQ9
DQ1
A1
A3
B1
A4
C1
A2
D1
A1
E1
A0
F1
G1
H1
CE#
OE#
VSS
6
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Connection Diagrams
64-Ball Fortified BGA
Top View, Balls Facing Down
A8
NC
B8
NC
C8
NC
D8
NC
E8
F8
G8
NC
H8
NC
VSS
NC
A7
B7
C7
D7
E7
F7
G7
H7
A12
A14
A15
A16
BYTE# DQ15/A-1
VSS
A13
A6
A9
B6
A8
C6
D6
E6
F6
G6
H6
A10
A11
DQ7
DQ14
DQ13
DQ6
A5
B5
C5
NC
D5
E5
F5
G5
H5
RESET#
A19
DQ5
DQ12
VCC
DQ4
WE#
A4
B4
NC
C4
D4
NC
E4
F4
G4
H4
RY/BY#
A18
DQ2
DQ10
DQ11
DQ3
A3
A7
B3
C3
A6
D3
A5
E3
F3
G3
H3
A17
DQ0
DQ8
DQ9
DQ1
A2
A3
B2
A4
C2
A2
D2
A1
E2
A0
F2
G2
H2
VSS
CE#
OE#
A1
NC
B1
NC
C1
NC
D1
NC
E1
F1
G1
NC
H1
NC
NC
NC
Special Package Handling Instructions
Special handling is required for Flash Memory products in molded packages
(TSOP, BGA, SSOP, PDIP, PLCC). The package and/or data integrity may be
compromised if the package body is exposed to temperatures above 150°C for
prolonged periods of time.
January 31, 2007 25974B5
Am29LV160M
7
D a t a S h e e t
Pin Configuration
A19–A0
DQ14–DQ0
DQ15/A-1
=
=
=
20 addresses
15 data inputs/outputs
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
BYTE#
CE#
OE#
=
=
=
=
=
=
=
Selects 8-bit or 16-bit mode
Chip enable
Output enable
Write enable
Hardware reset pin
Ready/Busy output
WE#
RESET#
RY/BY#
VCC
3.0 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply tolerances)
VSS
NC
=
=
Device ground
Pin not connected internally
Logic Symbol
20
A19–A0
16 or 8
DQ15–DQ0
(A-1)
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
8
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Ordering Information
Standard Products
Spansion standard products are available in several packages and operating
ranges. The order number (Valid Combination) is formed by a combination of the
elements below.
Am29LV160M
T
100
E
I
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
PACKAGE TYPE
E
F
WA
=
=
=
48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048)
48-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR048)
48-ball Fine-Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 6 x 8 mm package (FBA048)
PC
=
64-ball Fortified Ball Grid Array (BGA)
1.0 mm pitch, 13 x 11 mm package (LAA064)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
B
=
=
Top sector
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29LV160M
16 Megabit (2M x 8-Bit/1M x 16-Bit) MirrorBitTM Flash Memory
3.0 Volt-only Read, Program, and Erase
Access
Time
(ns)
VCC
Voltage
Range
Valid Combinations for FBGA Packages
Package
Access
Time Voltage
(ns)
VCC
Valid Combinations
for TSOP Packages
Order Number
Marking
Range
Am29LV160MT90,
90
L160MT90VI,
L160MB90VI
Am29LV160MB90
WAI
PCI
EI, FI
2.7–3.6 V
Am29LV160MT90,
Am29LV160MB90
90
Am29LV160MT100,
Am29LV160MB100
100
L160MT90PI,
L160MB90PI
2.7–
3.6 V
L160MT10VI,
L160MB10VI
WAI
PCI
Am29LV160MT100,
Am29LV160MB100
100
L160MT10PI,
L160MB10PI
Note: For 70R and 85 speed options shown in product selector
guide, contact a sales office or representative for availability
and ordering information.
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device.
Consult your local sales office to confirm availability of specific valid combinations and to
check on newly released combinations.
January 31, 2007 25974B5
Am29LV160M
9
D a t a S h e e t
Device Bus Operations
This section describes the requirements and use of the device bus operations,
which are initiated through the internal command register. The command register
itself does not occupy any addressable memory location. The register is com-
posed of latches that store the commands, along with the address and data
information needed to execute the command. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the
function of the device. Table 1 lists the device bus operations, the inputs and con-
trol levels they require, and the resulting output. The following subsections
describe each of these operations in further detail.
Table 1. Am29LV160M Device Bus Operations
DQ8–DQ15
BYTE#
= V
Addresses
(Note 1)
DQ0– BYTE#
Operation
CE# OE# WE# RESET#
DQ7
DOUT
DIN
= V
IH
IL
Read
Write
L
L
L
H
L
H
H
AIN
AIN
DOUT
DIN
DQ8–DQ14 = High-Z,
DQ15 = A-1
H
VCC
0.3 V
±
VCC ±
0.3 V
Standby
X
X
X
High-Z High-Z
High-Z
Output Disable
Reset
L
H
X
H
X
H
L
X
X
High-Z High-Z
High-Z High-Z
High-Z
High-Z
X
Sector Address,
A6 = L, A1 = H,
A0 = L
Sector Protect (Note 2)
L
H
L
VID
DIN
X
X
Sector Address,
A6 = H, A1 = H,
A0 = L
Sector Unprotect (Note 2)
L
H
X
L
VID
VID
DIN
DIN
X
X
Temporary Sector
Unprotect
X
X
AIN
DIN
High-Z
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT
= Data Out
Notes:
1. Addresses are A19:A0 in word mode (BYTE# = VIH), A19:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See “Sector
Protection/Unprotection” on page 15.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in
the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in
word configuration, DQ15–DQ0 are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only
data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/
O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the
LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins
to VIL. CE# is the power control and selects the device. OE# is the output control
and gates array data to the output pins. WE# should remain at VIH. The BYTE#
pin determines whether the device outputs array data in words or bytes.
10
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
The internal state machine is set for reading array data upon device power-up,
or after a hardware reset. This ensures that no spurious alteration of the mem-
ory content occurs during the power transition. No command is necessary in
this mode to obtain array data. Standard microprocessor read cycles that as-
sert valid addresses on the device address inputs produce valid data on the
device data outputs. The device remains enabled for read access until the com-
mand register contents are altered.
See “Reading Array Data” on page 23 for more information. Refer to the table
“Read Operations” on page 42 for timing specifications and to Figure 13, on page
42 for the timing diagram. ICC1 in the table “CMOS Compatible” on page 40 rep-
resents the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH
.
For program operations, the BYTE# pin determines whether the device accepts
program data in bytes or words. Refer to “Word/Byte Configuration” on page 10
for more information.
The device features an Unlock Bypass mode to facilitate faster programming.
Once the device enters the Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four. The “Word/Byte Program
Command Sequence” on page 24 contains details on programming data to the
device using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 2, on page 13 and Table 3, on page 14 indicate the address space that each
sector occupies. A “sector address” consists of the address bits required to
uniquely select a sector. The sector “Command Definitions” on page 23 contains
details on erasing a sector or the entire chip, or suspending/resuming the erase
operation.
After the system writes the autoselect command sequence, the device enters the
autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ7–DQ0. Standard read
cycle timings apply in this mode. Refer to the sections “Autoselect Mode” on
page 15 and “Autoselect Command Sequence” on page 24 for more information.
ICC2 in the DC Characteristics table represents the active current specification for
the write mode. The section “AC Characteristics” on page 42 contains timing
specification tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may check the status of the
operation by reading the status bits on DQ7–DQ0. Standard read cycle timings
and ICC read specifications apply. Refer to “Write Operation Status” on page 33
for more information, and to “AC Characteristics” on page 42 for timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
January 31, 2007 25974B5
Am29LV160M
11
D a t a S h e e t
The device enters the CMOS standby mode when the CE# and RESET# pins are
both held at VCC ± 0.3 V. (Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within VCC ± 0.3 V, the device
is in the standby mode, but the standby current is greater. The device requires
standard access time (tCE) for read access when the device is in either of these
standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws ac-
tive current until the operation is completed.
In the table “CMOS Compatible” on page 40, ICC3 and ICC4 represents the standby
current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The
device automatically enables this mode when addresses remain stable for tACC
+
30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE#
control signals. Standard address access timings provide new data when
addresses are changed. While in sleep mode, output data is latched and always
available to the system. ICC4 in the table “CMOS Compatible” on page 40
represents the automatic sleep mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading
array data. When the system drives the RESET# pin to VIL for at least a period of
tRP, the device immediately terminates any operation in progress, tristates all
data output pins, and ignores all read/write attempts for the duration of the RE-
SET# pulse. The device also resets the internal state machine to reading array
data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held
at VSS±0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current is greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would
thus also reset the Flash memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin re-
mains a “0” (busy) until the internal reset operation is complete, which requires
a time of tREADY (during Embedded Algorithms). The system can thus monitor
RY/BY# to determine whether the reset operation is complete. If RESET# is as-
serted when a program or erase operation is not executing (RY/BY# pin is “1”),
the reset operation is completed within a time of tREADY (not during Embedded
Algorithms). The system can read data tRH after the RESET# pin returns to VIH
.
Refer to the “AC Characteristics” on page 42 for RESET# parameters and to Fig-
ure 14, on page 43 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins
are placed in the high impedance state.
12
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Table 2. Sector Address Tables (Am29LV160MT)
Sector Size
(Kbytes/
Kwords)
Address Range (in hexadecimal)
Sector A19 A18 A17 A16 A15 A14 A13 A12
Byte Mode (x8)
000000–00FFFF
010000–01FFFF
020000–02FFFF
030000–03FFFF
040000–04FFFF
050000–05FFFF
060000–06FFFF
070000–07FFFF
080000–08FFFF
090000–09FFFF
0A0000–0AFFFF
0B0000–0BFFFF
0C0000–0CFFFF
0D0000–0DFFFF
0E0000–0EFFFF
0F0000–0FFFFF
100000–10FFFF
110000–11FFFF
120000–12FFFF
130000–13FFFF
140000–14FFFF
150000–15FFFF
160000–16FFFF
170000–17FFFF
180000–18FFFF
190000–19FFFF
1A0000–1AFFFF
1B0000–1BFFFF
1C0000–1CFFFF
1D0000–1DFFFF
1E0000–1EFFFF
1F0000–1F7FFF
1F8000–1F9FFF
1FA000–1FBFFF
1FC000–1FFFFF
Word Mode (x16)
000000–007FFF
008000–00FFFF
010000–017FFF
018000–01FFFF
020000–027FFF
028000–02FFFF
030000–037FFF
038000–03FFFF
040000–047FFF
048000–04FFFF
050000–057FFF
058000–05FFFF
060000–067FFF
068000–06FFFF
070000–077FFF
078000–07FFFF
080000–087FFF
088000–08FFFF
090000–097FFF
098000–09FFFF
0A0000–0A7FFF
0A8000–AFFFF
0B0000–0B7FFF
0B8000–0BFFFF
0C0000–0C7FFF
0C8000–0CFFFF
0D0000–0D7FFF
0D8000–0DFFFF
0E0000–0E7FFF
0E8000–0EFFFF
0F0000–0F7FFF
0F8000–0FBFFF
0FC000–0FCFFF
0FD000–0FDFFF
0FE000–0FFFFF
SA0
SA1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
X
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
32/16
8/4
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
8/4
16/8
Note: Address range is A19:A-1 in byte mode and A19:A0 in word mode. See “Word/Byte Configuration” on page 10
section.
January 31, 2007 25974B5
Am29LV160M
13
D a t a S h e e t
Table 3. Sector Address Tables (Am29LV160MB)
Sector Size
(Kbytes/
Kwords)
Address Range (in hexadecimal)
Sector A19 A18 A17 A16 A15 A14 A13 A12
Byte Mode (x8)
000000–003FFF
004000–005FFF
006000–007FFF
008000–00FFFF
010000–01FFFF
020000–02FFFF
030000–03FFFF
040000–04FFFF
050000–05FFFF
060000–06FFFF
070000–07FFFF
080000–08FFFF
090000–09FFFF
0A0000–0AFFFF
0B0000–0BFFFF
0C0000–0CFFFF
0D0000–0DFFFF
0E0000–0EFFFF
0F0000–0FFFFF
100000–10FFFF
110000–11FFFF
120000–12FFFF
130000–13FFFF
140000–14FFFF
150000–15FFFF
160000–16FFFF
170000–17FFFF
180000–18FFFF
190000–19FFFF
1A0000–1AFFFF
1B0000–1BFFFF
1C0000–1CFFFF
1D0000–1DFFFF
1E0000–1EFFFF
1F0000–1FFFFF
Word Mode (x16)
000000–001FFF
002000–002FFF
003000–003FFF
004000–007FFF
008000–00FFFF
010000–017FFF
018000–01FFFF
020000–027FFF
028000–02FFFF
030000–037FFF
038000–03FFFF
040000–047FFF
048000–04FFFF
050000–057FFF
058000–05FFFF
060000–067FFF
068000–06FFFF
070000–077FFF
078000–07FFFF
080000–087FFF
088000–08FFFF
090000–097FFF
098000–09FFFF
0A0000–0A7FFF
0A8000–0AFFFF
0B0000–0B7FFF
0B8000–0BFFFF
0C0000–0C7FFF
0C8000–0CFFFF
0D0000–0D7FFF
0D8000–0DFFFF
0E0000–0E7FFF
0E8000–0EFFFF
0F0000–0F7FFF
0F8000–0FFFFF
SA0
SA1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
16/8
8/4
SA2
8/4
SA3
32/16
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
Note: Address range is A19:A-1 in byte mode and A19:A0 in word mode. See the “Word/Byte Configuration” on page 10
section.
14
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector
protection verification, through identifier codes output on DQ7–DQ0. This mode
is primarily intended for programming equipment to automatically match a device
to be programmed with its corresponding programming algorithm. However, the
autoselect codes can also be accessed in-system through the command register.
When using programming equipment, the autoselect mode requires VID (11.5 V
to 12.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in
Table 4. In addition, when verifying sector protection, the sector address must
appear on the appropriate highest order address bits (see Table 2, on page 13
and Table 3, on page 14). Table 3 shows the remaining address bits that are don’t
care. When all necessary bits are set as required, the programming equipment
may then read the corresponding identifier code on DQ7-DQ0.
To access the autoselect codes in-system, the host system can issue the autose-
lect command via the command register, as shown in Table 10, on page 31 and
Table 11, on page 32. This method does not require VID. See “Command Defini-
tions” on page 23 for details on using the autoselect mode.
Table 4. Autoselect Codes (High Voltage Method)
A19 A11
to to
CE# OE# WE# A12 A10 A9
A8
to
A7
A5
to
A2
DQ8
to
A0 DQ15
DQ7
to
DQ0
Mod
e
Description
A6
A1
Manufacturer ID
L
L
L
L
H
H
X
X
VID
X
L
X
L
L
X
01h (AMD)
C4h
Device ID:
Am29LV160M
(Top Boot Block)
Word
Byte
Word
22h
X
X
VID
X
L
L
X
L
L
H
L
L
L
L
H
H
X
C4h
49h
Device ID:
Am29LV160M
(Bottom Boot
Block)
22h
X
SA
X
X
X
X
VID
VID
VID
X
X
X
X
X
X
H
L
Byte
L
L
H
X
49h
01h
(protected)
X
X
Sector Protection
Verification
L
L
H
L
H
L
00h
(unprotected)
83h (factory
locked
03h (not
Secured Silicon Sector
Indicator Bit (DQ7)
L
L
H
H
H
X
factory locked)
L = Logic Low = V , H = Logic High = V , SA = Sector Address, X = Don’t care.
IL
IH
Note: The autoselect codes may also be accessed in-system via command sequences. See Table 10, on page 31 and
Table 11, on page 32.
Sector Protection/Unprotection
The hardware sector protection feature disables both program and erase opera-
tions in any sector. The hardware sector unprotection feature re-enables both
program and erase operations in previously protected sectors.
The device is normally shipped with all sectors unprotected. However, the Ex-
pressFlash™ Service offers the option of programming and protecting sectors at
January 31, 2007 25974B5
Am29LV160M
15
D a t a S h e e t
the factory prior to shipping the device. Contact a sales office or representative
for details.
It is possible to determine whether a sector is protected or unprotected. See “Au-
toselect Mode” on page 15 for details.
Sector protection and unprotection requires VID on the RESET# pin only, and can
be implemented either in-system or via programming equipment. Figure 2, on
page 17 shows the algorithms and Figure 23, on page 50 shows the timing dia-
gram. This method uses standard microprocessor bus cycle timing. For sector
unprotect, all unprotected sectors must first be protected prior to the first sector
unprotect write cycle.
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to
change data in-system. The Sector Unprotect mode is activated by setting the
RESET# pin to VID. During this mode, formerly protected sectors can be pro-
grammed or erased by selecting the sector addresses. Once VID is removed from
the RESET# pin, all the previously protected sectors are protected again. Figure
2, on page 17 shows the algorithm, and Figure 22, on page 49 shows the timing
diagrams, for this feature.
START
RESET# = V
(Note 1)
ID
Perform Erase or
Program Operations
RESET# = V
IH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once again.
Figure 1. Temporary Sector Unprotect Operation
16
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
START
START
Protect all sectors:
PLSCNT = 1
PLSCNT = 1
RESET# = VID
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
RESET# = VID
Wait 1 ms
Wait 1 ms
unprotect address
No
First Write
No
First Write
Cycle = 60h?
Temporary Sector
Unprotect Mode
Temporary Sector
Unprotect Mode
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Wait 150 µs
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
Reset
PLSCNT = 1
Increment
PLSCNT
Wait 15 ms
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
Yes
No
Yes
Set up
next sector
address
Yes
No
PLSCNT
= 1000?
Protect another
sector?
Data = 00h?
Yes
Device failed
No
Yes
Remove VID
No
from RESET#
Last sector
verified?
Device failed
Write reset
command
Yes
Remove VID
In-System Single
High Voltage
from RESET#
In-System Single
High Voltage
Sector Protect
Algorithm
Sector Protect
complete
Write reset
command
Sector Unprotect
Algorithm
Sector Unprotect
complete
Figure 2. In-System Single High Voltage Sector Protect/Unprotect Algorithms
January 31, 2007 25974B5 Am29LV160M
17
D a t a S h e e t
Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector feature provides a Flash memory region that enables
permanent part identification through an Electronic Serial Number (ESN). The
Secured Silicon Sector is 256 bytes in length, and uses a Secured Silicon Sector
Indicator Bit (DQ7) to indicate whether or not the Secured Silicon Sector is
locked when shipped from the factory. This bit is permanently set at the factory
and cannot be changed, which prevents cloning of a factory locked part. This en-
sures the security of the ESN once the product is shipped to the field.
The device is offered with the Secured Silicon Sector either customer lockable
(standard shipping option) or factory locked (contact a sales office or represen-
tative for ordering information). The customer-lockable version is shipped with
the Secured Silicon Sector unprotected, allowing customers to program the sec-
tor after receiving the device. The customer-lockable version also has the
Secured Silicon Sector Indicator Bit permanently set to a “0.” The factory-locked
version is always protected when shipped from the factory, and has the Secured
Silicon Sector Indicator Bit permanently set to a “1.” Thus, the Secured Silicon
Sector Indicator Bit prevents customer-lockable devices from being used to re-
place devices that are factory locked. Note that the ACC function and unlock
bypass modes are not available when the Secured Silicon Sector is enabled.
The Secured Silicon sector address space in this device is allocated as follows:
Table 5. Secured Silicon Sector Addressing
Secured Silicon Sector Address
Range
Customer
Lockable
ESN Factory
Locked
ExpressFlash
Factory Locked
x16
x8
0F8000h–
0F8007h
1F0000h–
1F000Fh
ESN or determined
by customer
ESN
Determined by
customer
0F8008h–
0F807Fh
1F0010h–
1F00FFh
Determined
by customer
Unavailable
The system accesses the Secured Silicon Sector through a command sequence
(see “Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Se-
quence”). After the system writes the Enter Secured Silicon Sector command
sequence, it may read the Secured Silicon Sector by using the addresses given
in Table 5. This mode of operation continues until the system issues the Exit Se-
cured Silicon Sector command sequence, or until power is removed from the
device. On power-up, or following a hardware reset, the device reverts to send-
ing commands to sector SA0.
Customer Lockable: Secured Silicon Sector NOT Programmed or
Protected At the Factory
Unless otherwise specified, the device is shipped such that the customer may
program and protect the 256-byte Secured Silicon sector.
The system may program the Secured Silicon Sector using the write-buffer, ac-
celerated and/or unlock bypass methods, in addition to the standard
programming command sequence. See “Command Definitions” on page 23.
Programming and protecting the Secured Silicon Sector must be used with cau-
tion since, once protected, there is no procedure available for unprotecting the
Secured Silicon Sector area and none of the bits in the Secured Silicon Sector
memory space can be modified in any way.
18
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
The Secured Silicon Sector area can be protected using one of the following
procedures:
Write the three-cycle Enter Secured Silicon Sector Region command se-
quence, and then follow the in-system sector protect algorithm as shown in
Figure 2, on page 17, except that RESET# may be at either VIH or VID. This
allows in-system protection of the Secured Silicon Sector without raising any
device pin to a high voltage. Note that this method is only applicable to the
Secured Silicon Sector.
To verify the protect/unprotect status of the Secured Silicon Sector, follow the
algorithm shown in Figure 3.
Once the Secured Silicon Sector is programmed, locked and verified, the system
must write the Exit Secured Silicon Sector Region command sequence to return
to reading and writing within the remainder of the array.
Factory Locked: Secured Silicon Sector Programmed and
Protected At the Factory
In devices with an ESN, the Secured Silicon Sector is protected when the device
is shipped from the factory. The Secured Silicon Sector cannot be modified in any
way. An ESN Factory Locked device has a 16-byte random ESN at addresses
0F8000h–0F8007h. Please contact your local sales office or representative for
details on ordering ESN Factory Locked devices.
Customers may opt to have their code programmed by the manufacturer
through the ExpressFlash service (Express Flash Factory Locked). The devices
are then shipped from the factory with the Secured Silicon Sector permanently
locked. Contact an sales office or representative for details on using the Ex-
pressFlash service.
START
If data = 00h,
RESET# =
SecSi Sector is
unprotected.
VIH or VID
If data = 01h,
SecSi Sector is
protected.
Wait 1 ms
Write 60h to
any address
Remove VIH or VID
from RESET#
Write 40h to SecSi
Sector address
with A6 = 0,
Write reset
command
A1 = 1, A0 = 0
SecSi Sector
Protect Verify
complete
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
Figure 3. Secured Silicon Sector Protect Verify
January 31, 2007 25974B5
Am29LV160M
19
D a t a S h e e t
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system
software interrogation handshake, which allows specific vendor-specified soft-
ware algorithms to be used for entire families of devices. Software support can
then be device-independent, JEDEC ID-independent, and forward- and back-
ward-compatible for the specified flash device families. Flash vendors can
standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query
command, 98h, to address 55h in word mode (or address AAh in byte mode), any
time the device is ready to read array data. The system can read CFI information
at the addresses given in Table 6, on page 20 to Table 9, on page 22. In word
mode, the upper address bits (A7–MSB) must be all zeros. To terminate reading
CFI data, the system must write the reset command.
The system can also write the CFI query command when the device is in the au-
toselect mode. The device enters the CFI query mode, and the system can read
CFI data at the addresses given in Table 6, on page 20 to Table 9, on page 22.
The system must write the reset command to return the device to the read/reset
mode.
For further information, please refer to the CFI Specification and CFI Publication
100, available online at http://www.amd.com/flash/cfi. Alternatively, contact an
sales office or representative for copies of these documents.
Table 6. CFI Query Identification String
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
20
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Table 7. System Interface String
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
VCC Min. (write/erase)
0027h
1Bh
1Ch
36h
38h
D7–D4: volt, D3–D0: 100 millivolt
VCC Max. (write/erase)
0036h
D7–D4: volt, D3–D0: 100 millivolt
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
0000h
0000h
0007h
0000h
000Ah
0000h
0001h
0000h
0004h
0000h
VPP Min. voltage (00h = no VPP pin present)
VPP Max. voltage (00h = no VPP pin present)
Typical timeout per single byte/word write 2N µs
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
Typical timeout per individual block erase 2N ms
Typical timeout for full chip erase 2N ms (00h = not supported)
Max. timeout for byte/word write 2N times typical
Max. timeout for buffer write 2N times typical
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 8. Device Geometry Definition
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
27h
4Eh
0015h
Device Size = 2N byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0004h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0000h
0000h
0040h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
0001h
0000h
0020h
0000h
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0080h
0000h
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
001Eh
0000h
0000h
0001h
January 31, 2007 25974B5
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21
D a t a S h e e t
Table 9. Primary Vendor-Specific Extended Query
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
44h
86h
88h
0031h
0033h
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock (Bit 1–0)
0b = Required, 1b = Not Required
45h
8Ah
0008h
Process Technology (Bits 7–2)
0010b = 0.23 µm MirrorBit
Erase Suspend
46h
47h
48h
8Ch
8Eh
90h
0002h
0001h
0001h
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
Sector Protect
0 = Not Supported, X = Number of sectors in per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
49h
92h
0004h
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
Simultaneous Operation
00 = Not Supported, 01 = Supported
4Ah
4Bh
4Ch
94h
96h
98h
0000h
0000h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing
provides data protection against inadvertent writes (refer to Table 10, on page 31
and Table 11, on page 32 for command definitions). In addition, the following
hardware data protection measures prevent accidental erasure or programming,
which might otherwise be caused by spurious system level signals during VCC
power-up and power-down transitions, or from system noise.
Low V
Write Inhibit
CC
When VCC is less than VLKO, the device does not accept any write cycles. This pro-
tects data during VCC power-up and power-down. The command register and all
internal program/erase circuits are disabled, and the device resets. Subsequent
writes are ignored until VCC is greater than VLKO. The system must provide the
proper signals to the control pins to prevent unintentional writes when VCC is
greater than VLKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write
cycle.
22
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# =
IH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a
V
logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept
commands on the rising edge of WE#. The internal state machine is automatically
reset to reading array data on power-up.
Command Definitions
Writing specific address and data commands or sequences into the command
register initiates device operations. Table 10, on page 31 and Table 11, on
page 32 define the valid register command sequences. Note that writing incorrect
address and data values or writing them in the improper sequence may place the
device in an unknown state. A reset command is then required to set the device
for the next operation.
All addresses are latched on the falling edge of WE# or CE#, whichever happens
later. All data is latched on the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in “AC Characteristics” on page 42.
Reading Array Data
The device is automatically set to reading array data after device power-up. No
commands are required to retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the
Erase Suspend mode. The system can read array data using the standard read
timings, except that if it reads at an address within erase-suspended sectors,
the device outputs status data. After completing a programming operation in
the Erase Suspend mode, the system may once again read array data with the
same exception. See “Erase Suspend/Erase Resume Commands” on page 27
for more information on this mode.
The system must issue the reset command to re-enable the device for reading
array data if DQ5 goes high, or while in the autoselect mode. See the “Reset Com-
mand” section, next.
See also “Requirements for Reading Array Data” on page 10 for more informa-
tion. The table “Read Operations” on page 42s provides the read parameters, and
Figure 13, on page 42 shows the timing diagram.
Reset Command
Writing the reset command to the device resets the device to reading array data.
Address bits are don’t care for this command.
The reset command may be written between the sequence cycles in an erase
command sequence before erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in a program
command sequence before programming begins. This resets the device to read-
ing array data (also applies to programming in Erase Suspend mode). Once
January 31, 2007 25974B5
Am29LV160M
23
D a t a S h e e t
programming begins, however, the device ignores reset commands until the op-
eration is complete.
The reset command may be written between the sequence cycles in an autoselect
command sequence. Once in the autoselect mode, the reset command must be
written to return to reading array data (also applies to autoselect during Erase
Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command
returns the device to reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manu-
facturer and devices codes, and determine whether or not a sector is protected.
Table 10, on page 31 and Table 11, on page 32 show the address and data re-
quirements. This method is an alternative to that shown in Table 4, on page 15,
which is intended for PROM programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two unlock cycles, fol-
lowed by the autoselect command. The device then enters the autoselect mode,
and the system may read at any address any number of times, without initiating
another command sequence.
A read cycle at address XX00h retrieves the manufacturer code. A read cycle at
address XX01h returns the device code. A read cycle containing a sector address
(SA) and the address XX02h in word mode (or XX04h in byte mode) returns
XX01h if that sector is protected, or 00h if it is unprotected. Refer to Table 2, on
page 13 and Table 3, on page 14 for valid sector addresses.
The system must write the reset command to exit the autoselect mode and return
to reading array data.
Word/Byte Program Command Sequence
The system may program the device by word or byte, depending on the state
of the BYTE# pin. Programming is a four-bus-cycle operation. The program
command sequence is initiated by writing two unlock write cycles, followed by
the program set-up command. The program address and data are written next,
which in turn initiate the Embedded Program algorithm. The system is not re-
quired to provide further controls or timings. The device automatically
generates the program pulses and verifies the programmed cell margin.
Table 10, on page 31 and Table 11, on page 32 show the address and data re-
quirements for the byte program command sequence. Note that the Secured
Silicon Sector, autoselect, and CFI functions are unavailable when a program
operation is in progress.
When the Embedded Program algorithm is complete, the device then returns to
reading array data and addresses are no longer latched. The system can deter-
mine the status of the program operation by using DQ7, DQ6, or RY/BY#. See
“Write Operation Status” on page 33 for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm
are ignored. Note that a hardware reset immediately terminates the program-
ming operation. The Byte Program command sequence should be reinitiated once
the device resets to reading array data, to ensure data integrity.
Programming is allowed in any sequence and across sector boundaries. A bit
cannot be programmed from a “0” back to a “1”. Attempting to do so may
halt the operation and set DQ5 to “1,” or cause the Data# Polling algorithm to
24
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
indicate the operation was successful. However, a succeeding read shows that the
data is still “0”. Only erase operations can convert a “0” to a “1”.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to the
device faster than using the standard program command sequence. The unlock
bypass command sequence is initiated by first writing two unlock cycles. This is
followed by a third write cycle containing the unlock bypass command, 20h. The
device then enters the unlock bypass mode. A two-cycle unlock bypass program
command sequence is all that is required to program in this mode. The first cycle
in this sequence contains the unlock bypass program command, A0h; the second
cycle contains the program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two unlock cycles required
in the standard program command sequence, resulting in faster total program-
ming time. Table 10, on page 31 and Table 11, on page 32 show the
requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock By-
pass Reset commands are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle
must contain the data 90h; the second cycle the data 00h. Addresses are don’t
care for both cycles. The device then returns to reading array data.
Figure 4, on page 26 illustrates the algorithm for the program operation. See the
table “Erase/Program Operations” on page 45 for parameters, and Figure 17, on
page 46 for timing diagrams.
January 31, 2007 25974B5
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D a t a S h e e t
START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
Yes
No
No
Increment Address
Last Address?
Yes
Programming
Completed
Notes: See Tables 10 and 11 for program command sequence.
Figure 4. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations. Table 10, on page 31 and Table 11, on page 32
show the address and data requirements for the chip erase command sequence.
Note that the Secured Silicon Sector, autoselect, and CFI functions are unavail-
able when an erase operation is in progress.
Any commands written to the chip during the Embedded Erase algorithm are ig-
nored. Note that a hardware reset during the chip erase operation immediately
terminates the operation. The Chip Erase command sequence should be reiniti-
ated once the device returns to reading array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. See “Autoselect Command Sequence” on page 24 for informa-
tion on these status bits. When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are no longer latched.
26
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Figure 5, on page 29 illustrates the algorithm for the erase operation. See the
table “Erase/Program Operations” on page 45 for parameters, and Figure 18, on
page 47 for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is
initiated by writing two unlock cycles, followed by a set-up command. Two addi-
tional unlock write cycles are then followed by the address of the sector to be
erased, and the sector erase command. Table 10, on page 31 and Table 11, on
page 32 show the address and data requirements for the sector erase command
sequence. Note that the Secured Silicon Sector, autoselect, and CFI functions
are unavailable when an erase operation is in progress.
The device does not require the system to preprogram the memory prior to erase.
The Embedded Erase algorithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The system is not required to
provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 µs begins.
During the time-out period, additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than 50 µs, otherwise the last
address and command might not be accepted, and erasure may begin. It is rec-
ommended that processor interrupts be disabled during this time to ensure all
commands are accepted. The interrupts can be re-enabled after the last Sector
Erase command is written. If the time between additional sector erase commands
can be assumed to be less than 50 µs, the system need not monitor DQ3. Any
command other than Sector Erase or Erase Suspend during the time-out
period resets the device to reading array data. The system must rewrite the
command sequence and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer timed out.
(See “DQ3: Sector Erase Timer” on page 38.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation starts, only the Erase Suspend command is valid.
All other commands are ignored. Note that a hardware reset during the sector
erase operation immediately terminates the operation. The Sector Erase com-
mand sequence should be reinitiated once the device returns to reading array
data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the device returns to reading
array data and addresses are no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. (Refer to
“Write Operation Status” on page 33 for information on these status bits.)
Figure 5, on page 29 illustrates the algorithm for the erase operation. Refer to the
table “Erase/Program Operations” on page 45 for parameters, and Figure 18, on
page 47 for timing diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase oper-
ation and then read data from, or program data to, any sector not selected for
erasure. This command is valid only during the sector erase operation, including
the 50 µs time-out period during the sector erase command sequence. The Erase
January 31, 2007 25974B5
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27
D a t a S h e e t
Suspend command is ignored if written during the chip erase operation or Em-
bedded Program algorithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the time-out period and suspends
the erase operation. Addresses are “don’t-cares” when writing the Erase Suspend
command.
When the Erase Suspend command is written during a sector erase operation, the
device requires a maximum of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during the sector erase time-out,
the device immediately terminates the time-out period and suspends the erase
operation.
After the erase operation is suspended, the system can read array data from or
program data to any sector not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Normal read and write timings and
command definitions apply. Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and
DQ2 together, to determine if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” on page 33 for information on these status bits.
After an erase-suspended program operation is complete, the system can once
again read array data within non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. See “Write Operation Status” on page 33 for
more information.
The system may also write the autoselect command sequence when the device
is in the Erase Suspend mode. The device allows reading autoselect codes even
at addresses within erasing sectors, since the codes are not stored in the memory
array. When the device exits the autoselect mode, the device reverts to the Erase
Suspend mode, and is ready for another valid operation. See “Autoselect Com-
mand Sequence” on page 24 for more information.
The system must write the Erase Resume command (address bits are “don’t
care”) to exit the erase suspend mode and continue the sector erase operation.
Further writes of the Resume command are ignored. Another Erase Suspend
command can be written after the device resumes erasing.
Note: During an erase operation, this flash device performs multiple internal op-
erations which are invisible to the system. When an erase operation is
suspended, any of the internal operations that were not fully completed must be
restarted. As such, if this flash device is continually issued suspend/resume com-
mands in rapid succession, erase progress is impeded as a function of the number
of suspends. The result is a longer cumulative erase time than without suspends.
Note that the additional suspends do not affect device reliability or future perfor-
mance. In most systems rapid erase/suspend activity occurs only briefly. In such
cases, erase performance is not significantly impacted.
28
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
START
Write Erase
Command Sequence
Data Poll
from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 10, on page 31 and Table 11, on page 32 for erase command sequence.
2. See “DQ3: Sector Erase Timer” on page 38 for more information.
Figure 5. Erase Operation
Program Suspend/Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming
operation so that data can be read from any non-suspended sector. When the
Program Suspend command is written during a programming process, the de-
vice halts the program operation within 15 μs maximum (5 μs typical) and
updates the status bits. Addresses are not required when writing the Program
Suspend command.
After the programming operation is suspended, the system can read array data
from any non-suspended sector. The Program Suspend command may also be
issued during a programming operation while an erase is suspended. In this
case, data may be read from any addresses not in Erase Suspend or Program
Suspend. If a read is needed from the Secured Silicon Sector area (One-time
Program area), then user must use the proper command sequences to enter and
exit this region.
The system may also write the autoselect command sequence when the device
is in the Program Suspend mode. The system can read as many autoselect
codes as required. When the device exits the autoselect mode, the device re-
verts to the Program Suspend mode, and is ready for another valid operation.
See Autoselect Command Sequence for more information.
After the Program Resume command is written, the device reverts to program-
ming. The system can determine the status of the program operation using the
January 31, 2007 25974B5
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29
D a t a S h e e t
DQ7 or DQ6 status bits, just as in the standard program operation. See “Write
Operation Status” on page 33 for more information.
The system must write the Program Resume command (address bits are don’t
care) to exit the Program Suspend mode and continue the programming opera-
tion. Further writes of the Resume command are ignored. Another Program
Suspend command can be written after the device resumes programming.
Program Operation
Sequence in Progress
Write Program Suspend
Write address/data
XXXh/B0h
Command Sequence
Command is also valid for
Erase-suspended-program
operations
Wait 15 ms
Autoselect and SecSi Sector
Read data as
required
read operations are also allowed
Data cannot be read from erase- or
program-suspended sectors
Done
No
reading?
Yes
Write Program Resume
Command Sequence
Write address/data
XXXh/30h
Device reverts to
operation prior to
Program Suspend
Figure 6. Program Suspend/Program Resume
30
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Command Definitions Tables
Table 10. Command Definitions (x16 Mode, BYTE# = V
)
IH
Bus Cycles (Notes 2–5)
Command
Sequence
(Note 1)
First
Second
Third
Fourth
Fifth
Sixth
Addr Data
Addr
Data
Addr
Data
Addr
Data
Addr Data Addr Data
Read (Note 5)
Reset (Note 6)
Manufacturer ID
1
1
4
6
6
RA
RD
F0
XXX
555
555
555
AA
AA
AA
2AA
2AA
2AA
55
55
55
555
555
555
90
90
90
X00
X01
X01
0001
Device ID, Top Boot (Note 8)
22C4
2249
Device ID, Bottom Boot (Note 8)
Secured Silicon Sector Factory
Protect
4
555
AA
2AA
55
555
90
X03
83/03
00/01
(Note 15)
Sector Group Protect Verify
(Note 9)
4
555
AA
2AA
55
555
90
(SA)X02
Enter Secured Silicon Sector Region
Exit Secured Silicon Sector Region
Program
3
4
4
3
2
2
6
6
1
1
1
555
555
555
555
XXX
XXX
555
555
XXX
XXX
55
AA
AA
AA
AA
A0
90
AA
AA
B0
30
98
2AA
2AA
2AA
2AA
PA
55
55
55
55
PD
00
55
55
555
555
555
555
88
90
A0
20
XXX
PA
00
PD
Unlock Bypass
Unlock Bypass Program (Note 10)
Unlock Bypass Reset (Note 11)
Chip Erase
XXX
2AA
2AA
555
555
80
80
555
555
AA
AA
2AA
2AA
55
55
555
SA
10
30
Sector Erase
Program/Erase Suspend (Note 12)
Program/Erase Resume (Note 13)
CFI Query (Note 14)
Legend:
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of WE# or CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or erased. Address bits A19–A15 uniquely select any sector.
Notes:
1. See Table 1, on page 10 for description of bus operations.
9. Data is 00h for an unprotected sector group and 01h for a
protected sector group.
2. All values are in hexadecimal.
10. Unlock Bypass command is required prior to Unlock
Bypass Program command.
3. Shaded cells indicate read cycles. All others are write
cycles.
11. Unlock Bypass Reset command is required to return to
read mode when device is in unlock bypass mode.
4. During unlock and command cycles, when lower address
bits are 555 or 2AA as shown in table, address bits above
A11 and data bits above DQ7 are don’t care.
12. System may read and program in non-erasing sectors, or
enter autoselect mode, when in Erase Suspend mode.
Erase Suspend command is valid only during a sector
erase operation.
5. No unlock or command cycles required when device is in
read mode.
6. Reset command is required to return to read mode (or to
erase-suspend-read mode if previously in Erase Suspend)
when device is in autoselect mode, or if DQ5 goes high
while device is providing status information.
13. Erase Resume command is valid only during Erase
Suspend mode.
14. Command is valid when device is ready to read array data
or when device is in autoselect mode.
7. Fourth cycle of the autoselect command sequence is a
read cycle. Data bits DQ15–DQ8 are don’t care. See
“Autoselect Command Sequence” on page 24 for more
information.
15. Data is 83h for factory locked and 03h for not factory
locked.
8. Device ID must be read in three cycles.
January 31, 2007 25974B5
Am29LV160M
31
D a t a S h e e t
Table 11. Command Definitions (x8 Mode, BYTE# = V )
IL
Bus Cycles (Notes 2–5)
Command
Sequence
(Note 1)
First
Second
Third
Fourth
Fifth
Sixth
Addr Data
Addr
Data
Addr
Data
Addr
Data
Addr Data Addr Data
Read (Note 5)
Reset (Note 6)
Manufacturer ID
1
1
4
6
RA
RD
F0
XXX
AAA
AAA
AA
AA
555
555
55
55
AAA
AAA
90
90
X00
X02
01
C4
Device ID, Top Boot (Note 8)
Device ID, Bottom Boot (Note
8)
6
4
4
AAA
AAA
AAA
AA
AA
AA
555
555
555
55
55
55
AAA
AAA
AAA
90
90
90
X02
49
Secured Silicon Sector Factory
Protect
(Note 15)
X06
83/03
00/01
Sector Group Protect Verify
(Note 9)
(SA)X04
Enter Secured Silicon Sector Region
Exit Secured Silicon Sector Region
Program
3
4
4
3
2
2
6
6
1
1
1
AAA
AAA
AAA
AAA
XXX
XXX
AAA
AAA
XXX
XXX
AA
AA
AA
AA
AA
A0
90
AA
AA
B0
30
98
555
555
555
555
PA
55
55
55
55
PD
00
55
55
AAA
AAA
AAA
AAA
88
90
A0
20
XXX
PA
00
PD
Unlock Bypass
Unlock Bypass Program (Note 10)
Unlock Bypass Reset (Note 11)
Chip Erase
XXX
555
555
AAA
AAA
80
80
AAA
AAA
AA
AA
555
555
55
55
AAA
SA
10
30
Sector Erase
Program/Erase Suspend (Note 12)
Program/Erase Resume (Note 13)
CFI Query (Note 14)
Legend:
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse, whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of WE# or CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or erased. Address bits A19–A15 uniquely select any sector.
Notes:
1. See Table 1, on page 10 for description of bus operations.
9. Data is 00h for an unprotected sector group and 01h for a
protected sector group.
2. All values are in hexadecimal.
10. Unlock Bypass command is required prior to Unlock
Bypass Program command.
3. Shaded cells indicate read cycles. All others are write
cycles.
11. Unlock Bypass Reset command is required to return to
read mode when device is in unlock bypass mode.
4. During unlock and command cycles, when lower address
bits are 555 or AAA as shown in table, address bits above
A11 are don’t care.
12. System may read and program in non-erasing sectors, or
enter autoselect mode, when in Erase Suspend mode.
Erase Suspend command is valid only during a sector
erase operation.
5. No unlock or command cycles required when device is in
read mode.
6. Reset command is required to return to read mode (or to
erase-suspend-read mode if previously in Erase Suspend)
when device is in autoselect mode, or if DQ5 goes high
while device is providing status information.
13. Erase Resume command is valid only during Erase
Suspend mode.
14. Command is valid when device is ready to read array data
or when device is in autoselect mode.
7. Fourth cycle of autoselect command sequence is a read
cycle. Data bits DQ15–DQ8 are don’t care. See
“Autoselect Command Sequence” on page 24 for more
information.
15. Data is 83h for factory locked and 03h for not factory
locked.
8. Device ID must be read in three cycles.
32
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Write Operation Status
The device provides several bits to determine the status of a write operation:
DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 12, on page 38 and the following
subsections describe the functions of these bits. DQ7, RY/BY#, and DQ6 each
offer a method for determining whether a program or erase operation is complete
or in progress. These three bits are discussed first.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded
Algorithm is in progress or completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final WE# pulse in the program
or erase command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the com-
plement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to DQ7. The system must
provide the program address to read valid status information on DQ7. If a pro-
gram address falls within a protected sector, Data# Polling on DQ7 is active for
approximately 1 µs, then the device returns to reading array data.
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7.
When the Embedded Erase algorithm is complete, or if the device enters the
Erase Suspend mode, Data# Polling produces a “1” on DQ7. This is analogous to
the complement/true datum output described for the Embedded Program algo-
rithm: the erase function changes all the bits in a sector to “1”; prior to this, the
device outputs the “complement,” or “0.” The system must provide an address
within any of the sectors selected for erasure to read valid status information on
DQ7.
After an erase command sequence is written, if all sectors selected for erasing
are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the
device returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the se-
lected sectors that are protected.
When the system detects DQ7 changes from the complement to true data, it can
read valid data at DQ7–DQ0 on the following read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is as-
serted low. Figure 19, on page 48, Data# Polling Timings
(During Embedded Algorithms), illustrates this.
Table 12, on page 38 shows the outputs for Data# Polling on DQ7. Figure 7, on
page 34 shows the Data# Polling algorithm.
January 31, 2007 25974B5
Am29LV160M
33
D a t a S h e e t
START
Read DQ7–DQ0
Addr = VA
Yes
DQ7 = Data?
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
Yes
DQ7 = Data?
No
PASS
FAIL
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid
address is an address within any sector selected for erasure. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simulta-
neously with DQ5.
Figure 7. Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Em-
bedded Algorithm is in progress or complete. The RY/BY# status is valid after the
rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an
open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC
.
34
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
If the output is low (Busy), the device is actively erasing or programming. (This
includes programming in the Erase Suspend mode.) If the output is high (Ready),
the device is ready to read array data (including during the Erase Suspend
mode), or is in the standby mode.
Table 12, on page 38 shows the outputs for RY/BY#. Figure 13, on page 42, Fig-
ure 14, on page 43, Figure 17, on page 46 and Figure 18, on page 47 show RY/
BY# for read, reset, program, and erase operations, respectively.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm
is in progress or complete, or whether the device entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is valid after the rising edge
of the final WE# pulse in the command sequence (prior to the program or erase
operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cy-
cles to any address cause DQ6 to toggle. (The system may use either OE# or CE#
to control the read cycles.) When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing
are protected, DQ6 toggles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the Embedded Erase algo-
rithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is ac-
tively erasing or is erase-suspended. When the device is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6 toggles. When the device en-
ters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alter-
natively, the system can use DQ7 (see the subsection on “DQ7: Data# Polling”).
If a program address falls within a protected sector, DQ6 toggles for approxi-
mately 1 µs after the program command sequence is written, then returns to
reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling
once the Embedded Program algorithm is complete.
Table 12, on page 38 shows the outputs for Toggle Bit I on DQ6. Figure 8, on page
37 shows the toggle bit algorithm in flowchart form, and the section “Reading
Toggle Bits DQ6/DQ2” on page 36 explains the algorithm. Figure 20, on page 48
in the “AC Characteristics” section shows the toggle bit timing diagrams. Figure
21, on page 49 shows the differences between DQ2 and DQ6 in graphical form.
See also the subsection on “DQ2: Toggle Bit II”.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular
sector is actively erasing (that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit II is valid after the rising
edge of the final WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that were
selected for erasure. (The system may use either OE# or CE# to control the read
cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is
erase-suspended. DQ6, by comparison, indicates whether the device is actively
erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected
January 31, 2007 25974B5
Am29LV160M
35
D a t a S h e e t
for erasure. Thus, both status bits are required for sector and mode information.
Refer to Table 12, on page 38 to compare outputs for DQ2 and DQ6.
Figure 8, on page 37 shows the toggle bit algorithm in flowchart form, and the
section “Reading Toggle Bits DQ6/DQ2” explains the algorithm. See also the
“DQ6: Toggle Bit I” on page 35 subsection.Figure 20, on page 48 shows the tog-
gle bit timing diagram. Figure 21, on page 49 shows the differences between DQ2
and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 8, on page 37 for the following discussion. Whenever the system
initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice
in a row to determine whether a toggle bit is toggling. Typically, the system
would note and store the value of the toggle bit after the first read. After the
second read, the system would compare the new value of the toggle bit with
the first. If the toggle bit is not toggling, the device completed the program or
erase operation. The system can read array data on DQ7–DQ0 on the following
read cycle.
However, if after the initial two read cycles, the system determines that the toggle
bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should then determine again
whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer toggling, the device success-
fully completed the program or erase operation. If it is still toggling, the device
did not complete the operation successfully, and the system must write the reset
command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit
is toggling and DQ5 did not go high. The system may continue to monitor the tog-
gle bit and DQ5 through successive read cycles, determining the status as
described in the previous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the operation (top of Figure
8, on page 37).
36
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
START
Read DQ7–DQ0
(Note 1)
Read DQ7–DQ0
No
Toggle Bit
= Toggle?
Yes
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
(Notes
1, 2)
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Figure 8. Toggle Bit Algorithm
Notes:
1. Read toggle bit twice to determine whether or not it is toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text.
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time exceeded a specified internal
pulse count limit. Under these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was not successfully
completed.
The DQ5 failure condition may appear if the system tries to program a “1” to a
location that is previously programmed to “0.” Only an erase operation can
January 31, 2007 25974B5
Am29LV160M
37
D a t a S h e e t
change a “0” back to a “1.” Under this condition, the device halts the opera-
tion, and when the operation exceeds the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the reset command to return
the device to reading array data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to de-
termine whether or not an erase operation starts. (The sector erase timer does
not apply to the chip erase command.) If additional sectors are selected for era-
sure, the entire time-out also applies after each additional sector erase command.
When the time-out is complete, DQ3 switches from “0” to “1.” The system may
ignore DQ3 if the system can guarantee that the time between additional sec-
tor erase commands is always less than 50 μs. See also the “Sector Erase
Command Sequence” on page 27.
After the sector erase command sequence is written, the system should read the
status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device accepted
the command sequence, and then read DQ3. If DQ3 is “1”, the internally con-
trolled erase cycle started; all further commands (other than Erase Suspend) are
ignored until the erase operation is complete. If DQ3 is “0”, the device accepts
additional sector erase commands. To ensure the command is accepted, the sys-
tem software should check the status of DQ3 prior to and following each
subsequent sector erase command. If DQ3 is high on the second status check,
the last command might not have been accepted. Table 12 shows the outputs for
DQ3.
Table 12. Write Operation Status
DQ7
(Note
2)
DQ5
(Note 1)
DQ2
(Note 2)
Operation
DQ6
DQ3
N/A
1
RY/BY#
Embedded Program Algorithm
Embedded Erase Algorithm
Program-
Program-
Suspend Read
DQ7#
0
Toggle
Toggle
0
0
No toggle
Toggle
0
0
Standard
Mode
Invalid (not allowed)
Data
1
1
1
Program
Suspend
Mode
Suspended Sector
Non-Program
Suspended Sector
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
Erase
Suspend Reading within Non-Erase Suspended
Data
Data
Data
0
Data
N/A
Data
N/A
1
0
Mode
Sector
Erase-Suspend-Program
DQ7#
Toggle
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation exceeds the maximum timing limits.
See “DQ5: Exceeded Timing Limits” on page 37 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
38
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Absolute Maximum Ratings
Storage Temperature, Plastic Packages. . . . . . . . . . . . . . . . .–65°C to +150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . . .–65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
A9, OE#, and RESET# (Note 2) . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
All other pins (Note 1). . . . . . . . . . . . . . . . . . . . . –0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions,
input or I/O pins may overshoot V to –2.0 V for periods of up to 20 ns. See Figure
SS
9. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage
transitions, input or I/O pins may overshoot to V +2.0 V for periods up to 20 ns.
CC
See Figure 10.
2. Minimum DC input voltage on pins A9, OE#, and RESET# is -0.5 V. During voltage
transitions, A9, OE#, and RESET# may overshoot V to –2.0 V for periods of up
SS
to 20 ns. See Figure 9. Maximum DC input voltage on pin A9 is +12.5 V which
may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short
circuit should not be greater than one second.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only; functional operation of the device
at these or any other conditions above those indicated in the operational sections of
this data sheet is not implied. Exposure of the device to absolute maximum rating con-
ditions for extended periods may affect device reliability.
20 ns
20 ns
20 ns
V
+0.8 V
CC
+2.0 V
V
–0.5 V
–2.0 V
CC
+0.5 V
2.0 V
20 ns
20 ns
20 ns
Figure 9. Maximum Negative
Overshoot Waveform
Figure 10. Maximum Positive
Overshoot Waveform
Operating Ranges
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
CC Supply Voltages
VCC for regulated voltage range . . . . . . . . . . . . . . . . . . . . . . .3.0 V to 3.6 V
CC for full voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.7 V to 3.6 V
V
V
Operating ranges define those limits between which the functionality of the device is
guaranteed.
January 31, 2007 25974B5
Am29LV160M
39
D a t a S h e e t
DC Characteristics
CMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
Max
1.0
Unit
VIN = VSS to VCC
,
ILI
Input Load Current
±
µA
VCC = VCC max
ILIT
A9 Input Load Current
Reset Leakage Current
VCC = VCC max; A9 = 12.5 V
35
35
µA
µA
I
V
= V
; RESET# = 12.5 V
LR
CC
CC max
VOUT = VSS to VCC
VCC = VCC max
,
ILO
Output Leakage Current
±1.0
µA
5 MHz
1 MHz
5 MHz
1 MHz
15
2
30
10
30
10
CE# = VIL, OE# = VIH,
Byte Mode
VCC Active Read Current
(Notes 1, 2)
ICC1
mA
15
2
CE# = VIL, OE# = VIH,
Word Mode
VCC Active Write Current
(Notes 2, 3, 5)
ICC2
ICC3
ICC4
CE# = VIL, OE# = VIH
40
0.4
0.8
60
5
mA
µA
µA
VCC Standby Current (Notes 2, 4) CE#, RESET# = VCC
±0.3 V
VCC Standby Current During Reset
(Notes 2, 4)
RESET# = VSS
±
0.3 V
5
Automatic Sleep Mode
(Notes 2, 4, 6)
VIH = VCC
VIL = VSS
±
0.3 V;
ICC5
0.4
5
µA
±
0.3 V
VIL1
VIH1
VIL2
VIH2
Input Low Voltage 1(6, 7)
Input High Voltage 1 (6, 7)
Input Low Voltage 2 (6, 8)
Input High Voltage 2 (6, 8)
–0.5
1.9
0.8
V
V
V
V
VCC + 0.5
0.3 x VIO
VIO + 0.5
–0.5
1.9
Voltage for Autoselect and
Temporary Sector Unprotect
VID
VCC = 3.3 V
11.5
12.5
0.45
V
VOL
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
OH = -2.0 mA, VCC = VCC min
IOH = -100 µA, VCC = VCC min
V
V
VOH1
VOH2
VLKO
I
0.85 x VCC
VCC–0.4
2.3
Output High Voltage
Low VCC Lock-Out Voltage (Note 4)
2.5
V
Notes:
1. The I current listed is typically less than 2 mA/MHz, with OE# at V . Typical V is 3.0 V.
CC
IH
CC
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. At extended temperature range (>+85°C), typical current is 5 µA and maximum current is 10 µA.
5. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.
6. Not 100% tested.
7. VCC voltage requirements.
8. VIO voltage requirements.
40
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Test Conditions
Table 13. Test Specifications
3.3 V
70R,
Test Condition
85
90, 100 Unit
2.7 kΩ
Output Load
1 TTL gate
Device
Under
Test
Output Load Capacitance, CL
(including jig capacitance)
30
30
pF
C
6.2 k
Ω
L
Input Rise and Fall Times
Input Pulse Levels
5
0.0–3.0
ns
V
Input timing measurement
reference levels
1.5
1.5
V
V
Output timing measurement
reference levels
Note: Diodes are IN3064 or equivalent
Figure 11. Test Setup
Key to Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Does Not Apply
Changing, State Unknown
Center Line is High Impedance State (High Z)
3.0 V
1.5 V
1.5 V
Input
Measurement Level
Output
0.0 V
Figure 12. Input Waveforms and Measurement Levels
January 31, 2007 25974B5
Am29LV160M
41
D a t a S h e e t
AC Characteristics
Read Operations
Parameter
Speed Options
JEDEC
Std
Description
Test Setup
70R
85
90
100 Unit
tAVAV
tRC
Read Cycle Time (Note 1)
Min
70
85
90
100
100
ns
ns
CE# = VIL
OE# = VIL
tAVQV
tACC
Address to Output Delay
Max
70
85
90
tELQV
tGLQV
tEHQZ
tGHQZ
tCE
tOE
tDF
tDF
Chip Enable to Output Delay
OE# = VIL
Max
Max
Max
Max
Min
70
30
25
25
85
35
30
30
90
35
30
30
100
50
ns
ns
ns
ns
ns
Output Enable to Output Delay
Chip Enable to Output High Z (Note 1)
Output Enable to Output High Z (Note 1)
30
30
Read
0
Output Enable
Hold Time (Note 1)
tOEH
Toggle and
Data# Polling
Min
Min
10
ns
ns
Output Hold Time From Addresses, CE#
or OE#, Whichever Occurs First (Note 1)
tAXQX
tOH
0
Notes:
1. Not 100% tested.
2. See Figure 11, on page 41 and Table 13, on page 42 for test specifications.
tRC
Addresses Stable
tACC
Addresses
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0 V
Figure 13. Read Operations Timings
42
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
AC Characteristics
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
Test Setup
Max
All Speed Options
Unit
RESET# Pin Low (During Embedded Algorithms)
to Read or Write (See Note)
tREADY
20
µs
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
tREADY
Max
500
ns
tRP
tRH
tRPD
tRB
RESET# Pulse Width
Min
Min
Min
Min
500
50
20
0
ns
ns
µs
ns
RESET# High Time Before Read (See Note)
RESET# Low to Standby Mode
RY/BY# Recovery Time
Note: Not 100% tested.
RY/BY#
CE#, OE#
RESET#
tRH
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 14. RESET# Timings
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Am29LV160M
43
D a t a S h e e t
AC Characteristics
Word/Byte Configuration (BYTE#)
Parameter
Speed Options
JEDEC
Std
Description
70R
85
90
100
Unit
ns
t
t
t
t
CE# to BYTE# Switching Low or High
BYTE# Switching Low to Output HIGH Z
BYTE# Switching High to Output Active
Max
Max
Min
5
ELFL/ ELFH
FLQZ
25
70
30
85
30
90
30
ns
100
ns
FHQV
CE#
OE#
BYTE#
DQ0–DQ14
DQ15/A-1
t
ELFL
Data Output
Data Output
(DQ0–DQ7)
BYTE#
(DQ0–DQ14)
Switching
from word
to byte
Address
Input
DQ15
Output
mode
t
FLQZ
t
ELFH
BYTE#
BYTE#
Switching
from byte
to word
Data Output
(DQ0–DQ7)
Data Output
DQ0–DQ14
DQ15/A-1
(DQ0–DQ14)
mode
Address
Input
DQ15
Output
t
FHQV
Figure 15. BYTE# Timings for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
t
(t
SET
AS
)
t
(t
)
HOLD AH
Figure 16. BYTE# Timings for Write Operations
Note: Refer to the table “Erase/Program Operations” on page 45 for tAS and tAH specifications.
44
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
AC Characteristics
Erase/Program Operations
Parameter
Speed Options
JEDEC
tAVAV
Std
tWC
tAS
Description
70R
85
90
100
Unit
ns
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min
Min
Min
Min
Min
Min
70
85
90
100
tAVWL
tWLAX
tDVWH
tWHDX
0
ns
tAH
45
35
45
45
45
45
50
50
ns
tDS
tDH
tOES
ns
Data Hold Time
0
0
ns
Output Enable Setup Time
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHWL
tGHWL
Min
0
ns
tELWL
tWHEH
tWLWH
tWHWL
tCS
tCH
CE# Setup Time
CE# Hold Time
Min
Min
Min
Min
Typ
Typ
Typ
Min
Min
Max
Max
0
0
ns
ns
ns
ns
tWP
Write Pulse Width
Write Pulse Width High
35
35
35
50
tWPH
30
12
12
Byte
tWHWH1
tWHWH2
tWHWH1
Programming Operation (Note 2)
µs
Word
tWHWH2 Sector Erase Operation (Note 2)
0.7
50
0
sec
µs
ns
ns
µs
tVCS
tRB
tBUSY
tPOLL
VCC Setup Time (Note 1)
Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
90
4
Program Valid Before Status Polling (Note 3)
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” on page 59 section for more information.
3. When using the program suspend/resume feature, if the suspend command is issued within tPOLL, tPOLL must
be fully re-applied upon resuming the programming operation. If the suspend command is issued after tPOLL
POLL is not required again prior to reading the status bits upon resuming.
,
t
January 31, 2007 25974B5
Am29LV160M
45
D a t a S h e e t
AC Characteristics
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
tAS
PA
tWC
Addresses
555h
PA
PA
tAH
CE#
OE#
tCH
tPOLL
tWP
WE#
tWPH
tWHWH1
tCS
tDS
tDH
PD
DOUT
A0h
Status
Data
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17. Program Operation Timings
46
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
AC Characteristics
Erase Command Sequence (last two cycles)
Read Status Data
VA
tAS
SA
tWC
VA
Addresses
CE#
2AAh
555h for chip erase
tAH
tCH
OE#
tWP
WE#
tWPH
tWHWH2
tCS
tDS
tDH
In
Data
Complete
55h
30h
Progress
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. Illustration shows device in word mode.
Figure 18. Chip/Sector Erase Operation Timings
January 31, 2007 25974B5
Am29LV160M
47
D a t a S h e e t
AC Characteristics
tRC
VA
Addresses
VA
VA
tPOLL
tACC
tCE
CE#
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
High Z
DQ15 and DQ7
Valid Data
Complement
Complement
Status Data
True
DQ14–DQ8, DQ6–DQ0
Status Data
True
Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array
data read cycle.
Figure 19. Data# Polling Timings
(During Embedded Algorithms)
tRC
Addresses
CE#
VA
tACC
tCE
VA
VA
VA
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
DQ6/DQ2
RY/BY#
Valid Status
(first read)
Valid Status
Valid Status
Valid Data
(second read)
(stops toggling)
tBUSY
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last
status read cycle, and array data read cycle.
Figure 20. Toggle Bit Timings
(During Embedded Algorithms)
48
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
AC Characteristics
Enter
Erase
Suspend
Enter Erase
Suspend Program
Embedded
Erase
Resume
Erasing
Erase
Erase Suspend
Read
Erase
Suspend
Program
Erase
Complete
WE#
Erase
Erase Suspend
Read
DQ6
DQ2
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 21. DQ2 vs. DQ6 for Erase and
Erase Suspend Operations
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
Min
500
ns
RESET# Setup Time for Temporary Sector
Unprotect
tRSP
4
µs
Note: Not 100% tested.
12 V
RESET#
0 or 3 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
Figure 22. Temporary Sector Unprotect/Timing Diagram
January 31, 2007 25974B5
Am29LV160M
49
D a t a S h e e t
AC Characteristics
V
ID
V
IH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Valid*
Status
Sector Protect/Unprotect
Verify
40h
Data
60h
60h
Sector Protect: 150 µs
Sector Unprotect: 15 ms
1 µs
CE#
WE#
OE#
Note: For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 23. Sector Protect/Unprotect Timing Diagram
50
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
AC Characteristics
Alternate CE# Controlled Erase/Program Operations
Parameter
Speed Options
JEDEC
tAVAV
tAVEL
Std
tWC
tAS
Description
70R
85
90
100
Unit
ns
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min
Min
Min
Min
Min
Min
70
85
90
100
0
ns
tELAX
tAH
45
35
45
45
45
45
50
50
ns
tDVEH
tEHDX
tDS
tDH
tOES
ns
Data Hold Time
0
0
ns
Output Enable Setup Time
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHEL
tGHEL
Min
0
ns
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
tCP
WE# Setup Time
WE# Hold Time
Min
Min
Min
Min
Typ
Typ
Typ
0
0
ns
ns
ns
ns
CE# Pulse Width
CE# Pulse Width High
35
35
35
50
tCPH
30
12
Byte
tWHWH1
tWHWH2
tWHWH1
tWHWH2
Programming Operation (Note 2)
Sector Erase Operation (Note 2)
µs
Word
12
0.7
sec
Notes:
1. Not 100% tested.
2. See “Erase and Programming Performance” on page 59 for more information.
January 31, 2007 25974B5
Am29LV160M
51
D a t a S h e e t
AC Characteristics
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
OE#
tPOLL
tGHEL
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tDS
tBUSY
tDH
DQ7#,
DQ15
DOUT
Data
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to
the device.
2. Figure indicates the last two bus cycles of the command sequence.
3. Word mode address used as an example.
Figure 24. Alternate CE# Controlled Write Operation Timings
52
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Erase and Programming Performance
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
Chip Erase Time
0.7
32
18
18
36
19
15
Excludes 00h programming prior to
erasure (Note 4)
sec
Byte Programming Time
Word Programming Time
300
300
100
66
µs
Excludes system level overhead
(Note 5)
Byte Mode
Word Mode
Chip Programming Time
(Note 3)
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0V, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 10, on page 31 and Table 11, on page 32 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles.
Latchup Characteristics
Description
Min
Max
Input voltage with respect to V on all pins except I/O pins
SS
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V on all I/O pins
–1.0 V
V
+ 1.0 V
CC
SS
V
Current
–100 mA
+100 mA
CC
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP Pin and BGA Package Capacitance
Parameter Symbol
Parameter Description
Test Setup
Typ
6
Max
7.5
5.0
12
Unit
pF
TSOP
C
Input Capacitance
V
= 0
= 0
= 0
IN
IN
Fine-pitch BGA
TSOP
4.2
8.5
5.4
7.5
3.9
pF
pF
C
Output Capacitance
V
OUT
OUT
Fine-pitch BGA
TSOP
6.5
9
pF
pF
C
Control Pin Capacitance
V
IN
IN2
Fine-pitch BGA
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Data Retention
Parameter
Test Conditions
150°C
Min
10
Unit
Years
Years
Minimum Pattern Data Retention Time
125°C
20
January 31, 2007 25974B5
Am29LV160M
53
D a t a S h e e t
Physical Dimensions
TS 048—48-Pin Standard TSOP
Dwg rev AA; 10/99
Note: BSC is an ANSI standard for Basic Space Centering.
54
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Physical Dimensions
TSR048—48-Pin Reverse TSOP
Dwg rev AA; 10/99
Note: BSC is an ANSI standard for Basic Space Centering.
January 31, 2007 25974B5
Am29LV160M
55
D a t a S h e e t
Physical Dimensions
FBA048—48-Ball Fine-Pitch Ball Grid Array (BGA)
6 x 8 mm Package
Dwg rev AF; 10/99
Note: BSC is an ANSI standard for Basic Space Centering.
56
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Physical Dimensions
LAA064—64-Ball Fortified Ball Grid Array (BGA)
13 x 11 mm Package
Note: BSC is an ANSI standard for Basic Space Centering.
January 31, 2007 25974B5
Am29LV160M
57
D a t a S h e e t
Revision Summary
Revision A (June 24, 2002)
Initial release.
Revision A+1 (July 3, 2002)
Added LAA064 package.
Corrected power consumption currents.
Changed DC Characteristics Zero Power Flash tables to TBD.
Corrected minimum erase and program cycle endurance.
Revision A+2 (December 6, 2002)
Global
Removed 44-pin SO package. Deleted dashes from ordering part numbers.
Distinctive Characteristics
Added information for Secured Silicon sector, Program Suspend & Resume. Cor-
rected erase endurance to 100K cycles. Changed section flow to match other
MirrorBit data sheets.
General Description
Changed section flow to match other MirrorBit data sheets.
Connection Diagrams
Corrected Fortified BGA diagram: balls C5, D8, D4, and F1 are now NC.
Ordering Information and Operating Ranges
Removed Commercial and Extended temperature ranges. Corrected Fine-pitch
BGA type to 6 x 8 mm package, FBA048.
Added package markings for the LAA064.
Secured Silicon Sector Flash Memory Region
Added section.
Program Suspend/Program Resume Command Sequence
Added text and flowchart.
Sector Protection/Unprotection
Deleted reference to alternate, high-voltage method of sector protection.
Command Definitions
Modified introductory paragraph to indicate device behavior when presented with
incorrect commands and data. Added mode restrictions to first paragraphs of pro-
gram, sector erase and chip erase subsections.
Command Definitions tables
Replaced previous table with two tables. Byte mode and word mode are now
shown separately. Added Secured Silicon Sector Factory Protect command
sequence.
Table 10. Write Operation Status
Added Program Suspend Mode rows to table.
BGA and TSOP Capacitance
Added fine-pitch BGA capacitance to table.
AC Characteristics tables
Typical sector erase time is now 0.4 s in all tables.
58
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Physical Dimensions
Corrected Fortified BGA drawing to FBA048.
Revision A+3 (January 6, 2003)
Global
Deleted references to WP# and ACC. The Am29LV160M does not offer those
features.
Command Definitions table
Deleted references to write buffers. This device does not offer that feature.
AC Characteristics
Erase and Program Operations table; Alternate CE# Controlled Erase/Operations
table: Changed tWHWH1 to TBD.
Revision A+4 (June 16, 2003)
Global
Changed status from Advance Information to Preliminary.
Modified speed options available.
Product Selector Guide
Added Note #2.
Ordering Information
Corrected OPN tables and added Note.
Secured Silicon Sector Flash Memory Region
Replaced text in this section.
Command Definitions
Modified Legend.
Erase/Program Operations and Alternate CE# Controlled Erase/
Program Operations
Inserted values for all TBD.
Erase and Programming Performance
Inserted values for all TBD.
Revision B (August 11, 2003)
Global
Modified speed options available. Converted document formatting to Spansion
template. Changed data sheet status from Advance Information to Preliminary.
Revision B+1 (February 27, 2004)
Autoselect Mode, Table 4
Added Secured Silicon Sector Indicator Bit (DQ7).
Secured Silicon Sector Flash Memory Region, Table 5
Corrected Secured Silicon Sector Address Ranges.
Factory Locked: Secured Silicon Sector Programmed and Protected At the Fac-
tory: Corrected addresses associated with 16-byte random ESN.
Command Definitions Tables
Tables 10 and 11: Corrected Fourth Address of Secured Silicon Sector Factory
Protect.
January 31, 2007 25974B5
Am29LV160M
59
D a t a S h e e t
AC Characteristics
Added tPOLL
.
Revision B+2 (September 24, 2004)
Erase and Programming Performance
Corrected chip erase, byte/word programming, and chip programming
specifications.
Command Definitions, Table 10
Corrected command definitions for Secured Silicon Sector Factory Protect and
Program
Command Definitions, Table 11
Corrected command definitions for Secured Silicon Sector Factory Protect.
Cover sheet and Title page
Added notation referencing superseding documentation.
Revision B+3 (November 11, 2004)
Global
Added cross-reference links.
Secured Silicon Sector Addressing Table
Updated the x8 address ranges.
Revision B+4 (January 10, 2006)
This product has been retired and is not available for designs. For new and cur-
rent designs, S29GL016A supersedes Am29LV160M and is the factory-
recommended migration path. Please refer to the S29GL016A datasheet for spec-
ifications and ordering information. Availability of this document is retained for
reference and historical purposes only.
Revision B5 (January 31, 2007)
Global
Changed SecSi to Secured Silicon.
Erase and Program Operations table
Changed tBUSY to a maximum specification.
60
Am29LV160M
25974B5 January 31, 2007
D a t a S h e e t
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and
artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-men-
tioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures
by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other
abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those products
Trademarks and Notice
Copyright © 2006–2007 Spansion Inc. All rights reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof, are trade-
marks of Spansion Inc. Other company and product names used in this publication are for identification purposes only and may be trademarks of their re-
spective companies.
Copyright © 2002–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Ad-
vanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes
only and may be trademarks of their respective companies.
January 31, 2007 25974B5
Am29LV160M
61
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