AM29LV800BB-120DG5C1 [AMD]
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1; 8兆位（ 1一M× 8位/ 512的K× 16位） CMOS 3.0伏只，引导扇区闪存裸片修订版1
| 型号： | AM29LV800BB-120DG5C1 |
| 厂家： | 
AMD |
| 描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 |
| 文件： | 总9页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUPPLEMENT
Am29LV800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Top or bottom boot block configurations
available
— 2.7 to 3.6 V for read, program, and erase
operations
■ Embedded Algorithms
— Ideal for battery-powered applications
■ Manufactured on 0.35 µm process technology
■ High performance
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
— 90 or 120 ns access time
■ Low power consumption (typical values at 5
MHz)
■ Minimum 1,000,000 write cycle guarantee per
sector
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
■ Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— 15 mA program/erase current
— Superior inadvertent write protection
■ Flexible sector architecture
■ Data# Polling and toggle bits
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— Provides a software method of detecting
program or erase operation completion
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
■ Ready/Busy# pin (RY/BY#)
— Supports full chip erase
— Provides a hardware method of detecting
program or erase cycle completion
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
Sectors can be locked in-system or via
programming equipment
■ Hardware reset pin (RESET#)
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
— Hardware method to reset the device to reading
array data
■ Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
Publication# 21356 Rev: B Amendment/+1
Issue Date: March 1998
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29LV800B in Known Good Die (KGD) form is
an 8 Mbit, 3.0 volt-only Flash memory. AMD defines
KGD as standard product in die form, tested for func-
tionality and speed. AMD KGD products have the same
reliability and quality as AMD products in packaged
form.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
Am29LV800B Features
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash
memory organized as 1,048,576 bytes or 524,288
words. The word-wide data (x16) appears on DQ15–
DQ0; the byte-wide (x8) data appears on DQ7–DQ0.
To eliminate bus contention the device has separate
chip enable (CE#), write enable (WE#) and output
enable (OE#) controls.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of
memory. This can be achieved in-system or via pro-
gramming equipment.
The device requires only a single 3.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations. No VPP is required for
program or erase operations. The device can also be
programmed in standard EPROM programmers.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within
a sector simultaneously via Fowler-Nordheim tun-
neling. The data is programmed using hot electron
injection.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that automati-
cally preprograms the array (if it is not already pro-
grammed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
ELECTRICAL SPECIFICATIONS
Refer to the Am29LV800B data sheet, publication
number 21490, for full electrical specifications on the
Am29LV800B in KGD form.
2
Am29LV800B Known Good Die
S U P P L E M E N T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29LV800B KGD
Speed Option (V
= 2.7 – 3.6 V)
-90
90
90
35
-120
120
120
50
CC
Max Access Time, t
(ns)
ACC
Max CE# Access, t (ns)
CE
Max OE# Access, t (ns)
OE
DIE PHOTOGRAPH
Orientation relative
to leading edge of
tape and reel
Orientation relative
to top left corner of
Gel-Pak
Am29LV800B Known Good Die
3
S U P P L E M E N T
DIE PAD LOCATIONS
9
8
7
6
5
4
3 2
1
44 43 42 41 40 39 38 37
36
35
34
33
10
11
12
AMD logo location
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
4
Am29LV800B Known Good Die
S U P P L E M E N T
Pad Center (mils)
PAD DESCRIPTION
Pad Center (millimeters)
Pad
Signal
X
Y
0.00
X
Y
1
2
3
4
5
6
7
8
V
0.00
0.0000
–0.3235
–0.4817
–0.6377
–0.7959
–0.9519
–1.1101
–1.2661
–1.4243
–1.6767
–1.6767
–1.6767
–1.6674
–1.5114
–1.3664
–1.2104
–1.0654
–0.9094
–0.7644
–0.6059
–0.4609
–0.2047
0.2558
0.5116
0.6566
0.8126
0.9576
1.1136
1.2586
1.4146
1.5596
1.7156
1.7249
1.7249
1.7249
1.4732
1.2705
1.1123
0.9563
0.7981
0.6421
0.4839
0.3279
0.1697
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
–0.0430
–0.3123
–0.5822
–6.7770
–6.7770
–6.7770
–6.7770
–6.7770
–6.7770
–6.7704
–6.7770
–6.7770
–6.8778
–6.8778
–6.7770
–6.7770
–6.7770
–6.7770
–6.7770
–6.7770
–6.7770
–6.7770
–6.7770
–0.5862
–0.3163
–0.0484
0.0576
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
CC
DQ4
DQ12
DQ5
–12.74
–18.96
–25.11
–31.33
–37.48
–43.71
–49.85
–56.08
–66.01
–66.01
–66.01
–65.65
–59.50
–53.80
–47.65
–41.95
–35.80
–30.09
–23.85
–18.15
–8.06
10.07
20.14
25.85
31.99
37.70
43.84
49.55
55.69
61.40
67.54
67.91
67.91
67.91
58.00
50.02
43.79
37.65
31.42
25.28
19.05
12.91
6.68
0.00
0.00
0.00
DQ13
DQ6
0.00
0.00
DQ14
DQ7
0.00
0.00
9
DQ15/A–1
0.00
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
V
–1.69
SS
BYTE#
A16
A15
A14
A13
A12
A11
A10
A9
–12.30
–22.92
–266.81
–266.81
–266.81
–266.81
–266.81
–266.81
–266.55
–266.81
–266.81
–270.78
–270.78
–266.81
–266.81
–266.81
–266.81
–266.81
–266.81
–266.81
–266.81
–266.81
–23.08
–12.45
–1.91
A8
WE#
RESET#
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
V
SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
2.27
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
Am29LV800B Known Good Die
5
S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
5
T
-90
DP
Am29LV800B
C
1
DIE REVISION
This number refers to the specific AMD manufacturing
process and product technology reflected in this document.
It is entered in the revision field of AMD standard product
nomenclature.
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I
= Industrial (–40°C to +85°C)
DIE THICKNESS
5 = 500 µm
PACKAGE TYPE AND MINIMUM ORDER QUANTITY*
DP
=
Waffle Pack
Die per 5 tray stack
®
DG = Gel-Pak Die Tray
Die per 6 tray stack
DT
=
Surftape™ (Tape and Reel)
Die per 7-inch reel
®
DW = Gel-Pak Wafer Tray (sawn wafer on frame)
Call AMD sales office for minimum order quantity
* Contact an AMD representative for quantities.
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T = Top sector
B = Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29LV800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory—Die Revision 1
3.0 Volt-only Program and Erase
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Valid Combinations
Am29LV800BT-90
Am29LV800BB-90
DPC 1, DPI 1,
DGC 1, DGI 1,
DTC 1, DTI 1,
DWC 1, DWI 1
Am29LV800BT-120
Am29LV800BB-120
6
Am29LV800B Known Good Die
S U P P L E M E N T
an off-line quality monitoring program (QMP) further
PRODUCT TEST FLOW
guarantees AMD quality standards are met on Known
Good Die products. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in.
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29LV800B product qualification database supple-
ment for KGD. AMD implements quality assurance pro-
cedures throughout the product test flow. In addition,
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 1
Data Retention
Bake
24 hours at 250°C
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 2
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 3
High Temperature
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Packaging for Shipment
Shipment
Figure 1. AMD KGD Product Test Flow
Am29LV800B Known Good Die
7
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die dimensions . . . . . . . . . . . . . . 147 mils x 293 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 3.74 mm x 7.45 mm
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . FASL
Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC
Manufacturing ID (Top Boot). . . . . . . . . . . . .98925AK
(Bottom Boot). . . . . . . . .98925ABK
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils
Bond Pad Size . . . . . . . . . . . . . . 3.94 mils x 3.94 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 µm x 100 µm
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . . .CS39
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pad Area Free of Passivation . . . . . . . . . .15.52 mils2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 µm2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44
Bond Pad Metalization. . . . . . . . . . . . . . . . . . Al/Cu/Si
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
SPECIAL HANDLING INSTRUCTIONS
Processing
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
DC OPERATING CONDITIONS
VCC (Supply Voltage) . . . . . . . . . . . . . . .2.7 V to 3.6 V
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage
Store at a maximum temperature of 30°C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
8
Am29LV800B Known Good Die
S U P P L E M E N T
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’S
PART, AND IT NEITHER ASSUMES NOR AUTHO-
RIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYERS SOLE AND EXCLU-
SIVE REMEDY FOR THE FURNISHING OF DEFEC-
TIVE OR NON CONFORMING ARTICLES AND AMD
SHALL NOT IN ANY EVENT BE LIABLE FOR
DAMAGES BY REASON OF FAILURE OF ANY
PRODUCT TO FUNCTION PROPERLY OR FOR ANY
SPECIAL, INDIRECT, CONSEQUENTIAL, INCI-
DENTAL OR EXEMPLARY DAMAGES, INCLUDING
BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS
OF USE OR COST OF LABOR BY REASON OF THE
FACT THAT SUCH ARTICLES SHALL HAVE BEEN
DEFECTIVE OR NON CONFORMING.
All transactions relating to AMD Products under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants articles of its manufacture against
defective materials or workmanship for a period of
ninety (90) days from date of shipment. This warranty
does not extend beyond AMD’s customer, and does
not extend to die which has been affixed onto a board
or substrate of any kind. The liability of AMD under this
warranty is limited, at AMD’s option, solely to repair or
to replacement with equivalent articles, or to make an
appropriate credit adjustment not to exceed the original
sales price, for articles returned to AMD, provided that:
(a) The Buyer promptly notifies AMD in writing of each
and every defect or nonconformity in any article for
which Buyer wishes to make a warranty claim against
AMD; (b) Buyer obtains authorization from AMD to
return the article; (c) the article is returned to AMD,
transportation charges paid by AMD, F.O.B. AMD’s fac-
tory; and (d) AMD’s examination of such article dis-
closes to its satisfaction that such alleged defect or
nonconformity actually exists and was not caused by
negligence, misuse, improper installation, accident or
unauthorized repair or alteration by an entity other than
AMD. The aforementioned provisions do not extend
the original warranty period of any article which has
either been repaired or replaced by AMD.
Buyer agrees that it will make no warranty representa-
tions to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty. Buyer assumes all responsibility for
successful die prep, die attach and wire bonding pro-
cesses. Due to the unprotected nature of the AMD
Products which are the subject hereof, AMD assumes
no responsibility for environmental effects on die.
AMD products are not designed or authorized for use
as components in life support appliances, devices or
systems where malfunction of a product can reason-
ably be expected to result in a personal injury. Buyer’s
use of AMD products for use in life support applications
is at Buyer’s own risk and Buyer agrees to fully indem-
nify AMD for any damages resulting in such use or
sale.
REVISION SUMMARY FOR AM29LV800B
KNOWN GOOD DIE
Revision B+1
Distinctive Characteristics
Revision B
Changed read and program/erase current to match
data sheet.
Formatted to match current template. Updated Distinc-
tive Characteristics and General Description sections
using the current main data sheet. Updated for CS39
process technology.
Pad Description
Corrected signal names for pads 13–44. Replaced
values for all pad coordinates.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Am29LV800B Known Good Die
9
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