BS640GBD4V_技术文档

Am29BDS640G

Data Sheet

RETIRED

PRODUCT

This product has been retired and is not recommended for designs. For new designs, S29WS064K

supersedes Am29BDS640G. Please refer to the S29WS-K family data sheet for specifications and

ordering information. Availability of this document is retained for reference and historical purposes

only.

The following document contains information on Spansion memory products.

Continuity of Specifications

There is no change to this data sheet as a result of offering the device as a Spansion product. Any

changes that have been made are the result of normal data sheet improvement and are noted in the

document revision summary.

For More Information

Please contact your local sales office for additional information about Spansion memory solutions.

Publication Number 25903 Revision C Amendment 2 Issue Date May 9, 2006

THIS PAGE LEFT INTENTIONALLY BLANK.

D a t a S h e e t

General Description

The Am29BDS640G is a 64 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode

Flash memory device, organized as 4,194,304 words of 16 bits each. This device uses a

single V_CCof 1.65 to 1.95 V to read, program, and erase the memory array. The device

supports Enhanced V_IOto offer up to 3V compatible inputs and outputs. A 12.0-volt V_ID

may be used for faster program performance if desired. The device can also be pro-

grammed in standard EPROM programmers.

At 54 MHz, the device provides a burst access of 13.5 ns at 30 pF with a latency of 87.5

ns at 30 pF. At 40 MHz, the device provides a burst access of 20 ns at 30 pF with a la-

tency of 95 ns at 30 pF. The device operates within the industrial temperature range of -

40°C to +85°C. The device is offered in the 80-ball FBGA package.

The Simultaneous Read/Write architecture provides simultaneous operation by divid-

ing the memory space into four banks. The device can improve overall system perfor-

mance by allowing a host system to program or erase in one bank, then immediately and

simultaneously read from another bank, with zero latency. This releases the system from

waiting for the completion of program or erase operations.

The device is divided as shown in the following table:

Bank

Quantity

Size

4

8 Kwords

32 Kwords

8 Kwords

A

31

32

31

4

B

C

D

The Enhanced VersatileIO™ (V_IO) control allows the host system to set the voltage levels

that the device generates at its data outputs and the voltages tolerated at its data inputs

to the same voltage level that is asserted on the V_IOpin. This allows the device to operate

in 1.8 V and 3 V system environments as required.

The device uses Chip Enable (CE#), Write Enable (WE#), Address Valid (AVD#) and Out-

put Enable (OE#) to control asynchronous read and write operations. For burst opera-

tions, the device additionally requires Ready (RDY), and Clock (CLK). This

implementation allows easy interface with minimal glue logic to a wide range of micropro-

cessors/microcontrollers for high performance read operations.

The burst read mode feature gives system designers flexibility in the interface to the de-

vice. The user can preset the burst length and wrap through the same memory space, or

read the flash array in continuous mode.

The clock polarity feature provides system designers a choice of active clock edges, either

rising or falling. The active clock edge initiates burst accesses and determines when data

will be output.

The device is entirely command set compatible with the JEDEC 42.4 single-power-

supply Flash standard. Commands are written to the command register using standard

microprocessor write timing. Register contents serve as inputs to an internal state-ma-

chine that controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out

of the device is similar to reading from other Flash or EPROM devices.

The Erase Suspend/Erase Resume feature enables the user to put erase on hold for

any period of time to read data from, or program data to, any sector that is not selected

for erasure. True background erase can thus be achieved.

The hardware RESET# pin terminates any operation in progress and resets the internal

state machine to reading array data. The RESET# pin may be tied to the system reset cir-

cuitry. A system reset would thus also reset the device, enabling the system microproces-

sor to read boot-up firmware from the Flash memory device.

The host system can detect whether a program or erase operation is complete by using

the device status bit DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or

erase cycle has been completed, the device automatically returns to reading array data.

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Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

The sector erase architecture allows memory sectors to be erased and reprogrammed

without affecting the data contents of other sectors. The device is fully erased when

shipped from the factory.

Hardware data protection measures include a low V_CCdetector that automatically in-

hibits write operations during power transitions. The device also offers two types of data

protection at the sector level. The sector lock/unlock command sequence disables or

re-enables both program and erase operations in any sector. When at V_IL, WP# locks

sectors 0 and 1 (bottom boot device) or sectors 132 and 133 (top boot device).

The device offers two power-saving features. When addresses have been stable for a

specified amount of time, the device enters the automatic sleep mode. The system can

also place the device into the standby mode. Power consumption is greatly reduced in

both modes.

Spansion flash technology combines years of flash memory manufacturing experience to

produce the highest levels of quality, reliability and cost effectiveness. The device electri-

cally erases all bits within a sector simultaneously via Fowler-Nordheim tunnelling. The

data is programmed using hot electron injection.

May 9, 2006 25903C2

Am29BDS640G

3

P r e l i m i n a r y

Table of Contents

Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .6

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Block Diagram of Simultaneous

Operation Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . .8

Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . .9

Special Handling Instructions for FBGA Package .......................... 9

Input/Output Descriptions . . . . . . . . . . . . . . . . . . . 10

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 11

Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 12

Table 1. Device Bus Operations ...........................................12

Enhanced VersatileIO™ (V_IO) Control ............................................12

Requirements for Asynchronous Read

Operation (Non-Burst) ........................................................................12

Requirements for Synchronous (Burst) Read Operation ......... 13

Configuration Register ........................................................................ 30

Table 12. Burst Mode Configuration Register ........................ 30

Sector Lock/Unlock Command Sequence .................................... 30

Reset Command .....................................................................................31

Autoselect Command Sequence .......................................................31

Program Command Sequence ...........................................................32

Unlock Bypass Command Sequence ...............................................32

Figure 2. Erase Operation.................................................. 33

Chip Erase Command Sequence ......................................................34

Sector Erase Command Sequence ...................................................34

Erase Suspend/Erase Resume Commands .....................................35

Figure 3. Program Operation.............................................. 36

Command Definitions ..........................................................................37

Table 13. Command Definitions .......................................... 37

Write Operation Status . . . . . . . . . . . . . . . . . . . . 38

DQ7: Data# Polling ..............................................................................38

Figure 4. Data# Polling Algorithm....................................... 39

RDY: Ready .............................................................................................40

DQ6: Toggle Bit I .................................................................................40

Figure 5. Toggle Bit Algorithm............................................ 41

DQ2: Toggle Bit II ................................................................................. 41

Table 14. DQ6 and DQ2 Indications .................................... 42

Reading Toggle Bits DQ6/DQ2 ....................................................... 42

DQ5: Exceeded Timing Limits .......................................................... 42

DQ3: Sector Erase Timer ...................................................................43

Table 15. Write Operation Status ........................................ 43

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 44

Figure 6. Maximum Negative Overshoot Waveform ............... 44

Figure 7. Maximum Positive

Overshoot Waveform........................................................ 44

Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . . 44

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 45

8-, 16-, and 32-Word Linear Burst with Wrap Around .............14

Table 2. Burst Address Groups ............................................14

Burst Mode Configuration Register .................................................14

Reduced Wait-State Handshaking Option .....................................14

Simultaneous Read/Write Operations with Zero Latency ....... 15

Writing Commands/Command Sequences ................................... 15

Accelerated Program Operation ...................................................... 15

Autoselect Functions ............................................................................16

Standby Mode .........................................................................................16

Automatic Sleep Mode .........................................................................16

RESET#: Hardware Reset Input ........................................................16

Output Disable Mode ........................................................................... 17

Hardware Data Protection ................................................................. 17

Write Protect (WP#) ........................................................................... 17

Low V_CCWrite Inhibit ........................................................................ 17

Write Pulse “Glitch” Protection .......................................................18

Logical Inhibit ..........................................................................................18

Power-Up Write Inhibit ......................................................................18

V_CCand V_IOPower-up And Power-down Sequencing .............18

Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Figure 8. Test Setup......................................................... 46

Table 16. Test Specifications .............................................. 46

Key to Switching Waveforms . . . . . . . . . . . . . . . . 46

Common Flash Memory Interface (CFI) . . . . . . .18

Table 3. CFI Query Identification String ...............................19

System Interface String..................................................... 19

Switching Waveforms . . . . . . . . . . . . . . . . . . . . . . 46

Figure 9. Input Waveforms and Measurement Levels............. 46

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 47

Figure 10. V_CCand V_IOPower-up Diagram........................... 47

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 48

Synchronous/Burst Read ....................................................................48

Figure 11. CLK Synchronous Burst Mode Read

(rising active CLK)............................................................ 49

Figure 12. CLK Synchronous Burst Mode Read

(Falling Active Clock)........................................................ 50

Figure 13. Synchronous Burst Mode Read............................ 51

Figure 14. 8-word Linear Burst with Wrap Around................. 51

Figure 15. Burst with RDY Set One Cycle Before Data............ 52

Figure 16. Reduced Wait-State Handshaking Burst

Mode Read Starting at an Even Address .............................. 53

Figure 17. Reduced Wait-State Handshaking Burst Mode Read

Starting at an Odd Address................................................ 54

Asynchronous Read ..............................................................................55

Figure 18. Asynchronous Mode Read with Latched Addresses . 55

Figure 19. Asynchronous Mode Read................................... 56

Figure 20. Reset Timings................................................... 57

Figure 21. Asynchronous Program Operation Timings............ 59

Table 5. Device Geometry Definition......................................... 20

Table 6. Primary Vendor-Specific Extended Query .................21

Table 7. Sector Address Table .............................................22

Command Definitions . . . . . . . . . . . . . . . . . . . . . .26

Reading Array Data .............................................................................26

Set Burst Mode Configuration Register Command Sequence 26

Figure 1. Synchronous/Asynchronous State Diagram ............. 27

Read Mode Setting ............................................................................... 27

Programmable Wait State Configuration ...................................... 27

Table 8. Programmable Wait State Settings ..........................28

Reduced Wait-State Handshaking Option ....................................28

Table 9. Initial Access Cycles vs. Frequency ..........................28

Standard Handshaking Operation ...................................................29

Table 10. Wait States for Standard Handshaking ...................29

Burst Read Mode Configuration ......................................................29

Table 11. Burst Read Mode Settings ....................................29

Burst Active Clock Edge Configuration .........................................29

RDY Configuration ..............................................................................30

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Am29BDS640G

25903C2 May 9, 2006

P r e l i m i n a r y

Figure 22. Alternate Asynchronous Program Operation Timings 60

Figure 23. Synchronous Program Operation Timings.............. 61

Figure 24. Alternate Synchronous Program Operation Timings 62

Figure 25. Chip/Sector Erase Command Sequence................. 63

Figure 26. Accelerated Unlock Bypass Programming Timing.... 64

Figure 27. Data# Polling Timings (During Embedded Algorithm) 65

Figure 28. Toggle Bit Timings (During Embedded Algorithm)... 65

Figure 29. Synchronous Data Polling Timings/

Figure 32. Example of Wait States Insertion (Standard

Handshaking Device)........................................................ 69

Figure 33. Back-to-Back Read/Write Cycle Timings ............... 70

Erase and Programming Performance . . . . . . . . 71

FBGA Ball Capacitance . . . . . . . . . . . . . . . . . . . . . 71

Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 72

FBE080—80-ball Fine-Pitch Ball Grid Array (FBGA)

Toggle Bit Timings ............................................................ 66

Figure 30. Latency with Boundary Crossing .......................... 67

Figure 31. Latency with Boundary Crossing

11 x 12 mm Package ...............................................................................72

into Program/Erase Bank ................................................... 68

May 9, 2006 25903C2

Am29BDS640G

5

D a t a S h e e t

Product Selector Guide

Part Number

Am29BDS640G

54 MHz

Burst Frequency

40 MHz

V

= 1.65 – 1.95 V,

= 2.7 – 3.15 V

CC

IO

D3, D4

D8, D9

C3, C4

C8, C9

Speed Option

V

= 1.65 – 1.95 V

CC, IO

Max Initial Synchronous Access Time, ns (t

Reduced Wait-state Handshaking: Even Address

)

IACC

87.5

95

Max Initial Synchronous Access Time, ns (t

Reduced Wait-state Handshaking: Odd Address; or Standard Handshaking

)

IACC

106

120

20

Max Burst Access Time, ns (t

)

13.5

BACC

Max Asynchronous Access Time, ns (t

)

ACC

70

90

20

Max CE# Access, ns (t

)

CE

Max OE# Access, ns (t

)

13.5

OE

Notes:

1. Speed Options ending in “3” and “8” indicate the “reduced wait-state handshaking” option, which speeds initial

synchronous accesses for even addresses.

2. Speed Options ending in “4” and “9” indicate the “standard handshaking” option.

3. See the AC Characteristics section of this datasheet for full specifications.

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Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

Block Diagram

V

SSIO

V

CC

SS

V

IO

DQ15–DQ0

RDY

Buffer

RDY

Erase Voltage

Generator

Input/Output

Buffers

WE#

RESET#

WP#

State

Control

ACC

Command

Register

PGM Voltage

Generator

Data

Latch

Chip Enable

Output Enable

Logic

CE#

OE#

Y-Decoder

Y-Gating

V_CC

Detector

Timer

Cell Matrix

X-Decoder

Burst

State

Control

Burst

Address

Counter

AVD#

CLK

A21–A0

May 9, 2006 25903C2

Am29BDS640G

7

D a t a S h e e t

Block Diagram of Simultaneous

Operation Circuit

V

CC

V

SS

V

IO

V

SSIO

Bank A Address

DQ15–DQ0

Bank A

A21–A0

X-Decoder

OE#

Bank B Address

DQ15–DQ0

Bank B

WP#

ACC

X-Decoder

A21–A0

STATE

CONTROL

&

COMMAND

REGISTER

RESET#

WE#

DQ15–DQ0

Status

CE#

AVD#

RDY

Control

A21–A0

DQ15–DQ0

X-Decoder

DQ15–DQ0

Bank C

Bank C Address

A21–A0

X-Decoder

Bank D

Bank D Address

DQ15–DQ0

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Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

Connection Diagram

80-ball Fine-Pitch Ball Grid Array

(Top View, Balls Facing Down)

C8

NC

D8

NC

E8

F8

G8

H8

NC

J8

K8

NC

L8

M8

NC

A8

NC

B8

NC

V_IO

V_SSIO

NC

A7

NC

B7

NC

C7

D7

E7

F7

G7

H7

NC

J7

K7

L7

M7

NC

V_SS

NC

A13

A12

A14

A15

A16

DQ15

C6

A9

D6

A8

E6

F6

G6

H6

J6

K6

A10

A11

DQ7

DQ14

DQ13

DQ6

C5

D5

E5

F5

G5

H5

J5

K5

V_CC

WE# RESET#

A21

A19

DQ5

DQ12

DQ4

C4

D4

E4

F4

G4

H4

J4

K4

RDY

ACC

A18

A20

DQ2

DQ10

DQ11

DQ3

C3

A7

D3

E3

A6

F3

A5

G3

H3

J3

K3

A17

DQ0

DQ8

DQ9

DQ1

C2

A3

D2

A4

E2

A2

F2

A1

G2

A0

H2

J2

K2

L2

M2

NC

A2

NC

B2

NC

V_SS

CE#

OE#

NC

J1

A1

NC

B1

NC

C1

NC

D1

E1

F1

G1

H1

K1

NC

L1

M1

NC

V_CC

CLK

WP#

AVD#

V_IO

V_SSIO

NC

Special Handling Instructions for FBGA Package

Special handling is required for Flash Memory products in FBGA packages.

Flash memory devices in FBGA packages may be damaged if exposed to ultra-

sonic cleaning methods. The package and/or data integrity may be compromised

if the package body is exposed to temperatures above 150°C for prolonged peri-

ods of time.

May 9, 2006 25903C2

Am29BDS640G

9

D a t a S h e e t

Input/Output Descriptions

A21-A0

DQ15-DQ0

CE#

=

Address inputs

Data input/output

Chip Enable input. Asynchronous relative to CLK for

the Burst mode.

OE#

WE#

=

Output Enable input. Asynchronous relative to CLK

for the Burst mode.

Write Enable input.

=

V

Device Power Supply

CC

(1.65 – 1.95 V).

V

=

Input & Output Buffer Power Supply (either 1.65 –

1.95 V or 2.7 – 3.15 V).

IO

V

NC

=

Ground

Output Buffer Ground

No Connect; not connected internally

Ready output; indicates the status of the Burst read.

Low = data not valid at expected time. High = data

valid.

SS

SSIO

RDY

CLK

=

CLK is not required in asynchronous mode. In burst

mode, after the initial word is output, subsequent

active edges of CLK increment the internal address

counter.

Address Valid input. Indicates to device that the valid

address is present on the address inputs (A21–A0).

Low = for asynchronous mode, indicates valid

address; for burst mode, causes starting address to

be latched.

AVD#

High = device ignores address inputs

Hardware reset input. Low = device resets and

returns to reading array data

RESET#

WP#

=

Hardware write protect input. At V , disables

IL

program and erase functions in the two outermost

sectors. Should be at V for all other conditions.

IH

ACC

=

At V , accelerates programming; automatically

ID

places device in unlock bypass mode. At V , locks all

IL

sectors. Should be at V for all other conditions.

IH

Logic Symbol

22

A21–A0

16

DQ15–DQ0

CLK

WP#

ACC

CE#

OE#

WE#

RDY

RESET#

AVD#

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Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

Ordering Information

The order number (Valid Combination) is formed by the following:

Am29BDS640G WS

T

D

8

I

TEMPERATURE RANGE

I

= Industrial (–40°C to +85°C)

PACKAGE TYPE

WS

=

80-Ball Fine-Pitch Grid Array (FBGA)

0.80 mm pitch, 11 x 12 mm package (FBE080)

V_IOAND HANDSHAKING FEATURES

8

9

3

4

=

1.8 V V_IO, reduced wait-state handshaking

1.8 V V_IO, standard handshaking

3 V V_IO, reduced wait-state handshaking

3 V V_IO, standard handshaking

CLOCK RATE/ASYNCHRONOUS SPEED

D

C

=

54 MHz/70 ns

40 MHz/90 ns

BOOT CODE SECTOR ARCHITECTURE

T

B

=

Top boot sector

Bottom boot sector

DEVICE NUMBER/DESCRIPTION

Am29BDS640G

64 Megabit (4 M x 16-Bit) CMOS Flash Memory, Simultaneous Read/Write,

Burst Mode Flash Memory, 1.8 Volt-only Read, Program, and Erase

Valid Combinations

Burst Frequency

V_IORange

(MHz)

Order Number

Package Marking

Am29BDS640GTD8

Am29BDS640GBD8

BS640GTD8V

BS640GBD8V

54

Am29BDS640GTD9

Am29BDS640GBD9

BS640GTD9V

BS640GBD9V

WSI

1.65–1.95V

Am29BDS640GTC8

Am29BDS640GBC8

BS640GTC8V

BS640GBC8V

40

54

40

Am29BDS640GTC9

Am29BDS640GBC9

BS640GTC9V

BS640GBC9V

Am29BDS640GTD3

Am29BDS640GBD3

BS640GTD3V

BS640GBD3V

Am29BDS640GTD4

Am29BDS640GBD4

BS640GTD4V

BS640GBD4V

WSI

2.7–3.15V

Am29BDS640GTC3

Am29BDS640GBC3

BS640GTC3V

BS640GBC3V

Am29BDS640GTC4

Am29BDS640GBC4

BS640GTC4V

BS640GBC4V

Valid Combinations

Valid Combinations list configurations planned to be supported in volume for this

device. Consult the local AMD sales office to confirm availability of specific valid

combinations and to check on newly released combinations.

Note: For the Am29BDS640G, the last digit of the speed grade specifies the V_IOrange

of the device. Speed options ending in “8” and “9” (e.g., D8, D9) indicate a 1.8 Volt

V_IOrange. Speed grades ending in “3” and “4” (e.g., D3, D4) indicate a 3.0 Volt V_IO

range.

May 9, 2006 25903C2

Am29BDS640G

11

D a t a S h e e t

Device Bus Operations

This section describes the requirements and use of the device bus operations,

which are initiated through the internal command register. The command register

itself does not occupy any addressable memory location. The register is com-

posed of latches that store the commands, along with the address and data

information needed to execute the command. The contents of the register serve

as inputs to the internal state machine. The state machine outputs dictate the

function of the device. Table 1 lists the device bus operations, the inputs and con-

trol levels they require, and the resulting output. The following subsections

describe each of these operations in further detail.

Table 1. Device Bus Operations

CLK

(See

Operation

CE#

OE#

WE#

A21–0

Addr In

HIGH Z

DQ15–0 RESET# Note) AVD#

Asynchronous Read - Addresses Latched

Asynchronous Read - Addresses Steady State

Asynchronous Write

L

H

L

I/O

H

L

X

L

H

X

I/O

Synchronous Write

L

I/O

Standby (CE#)

H

X

HIGH Z

X

Hardware Reset

Burst Read Operations

Load Starting Burst Address

L

X

L

H

Addr In

HIGH Z

X

H

Advance Burst to next address with

appropriate Data presented on the Data Bus

Burst

Data Out

H

Terminate current Burst read cycle

H

X

H

HIGH Z

H

L

X

Terminate current Burst read cycle via RESET#

X

Terminate current Burst read cycle and start

new Burst read cycle

L

X

H

HIGH Z

I/O

H

Legend: L = Logic 0, H = Logic 1, X = Don’t Care, S = Stable Logic 0 or 1 but no transitions.

Note: Default active edge of CLK is the rising edge.

Enhanced VersatileIO™ (V_IO) Control

The Enhanced VersatileIO (V ) control allows the host system to set the voltage

IO

levels that the device generates at its data outputs and the voltages tolerated at

its data and address inputs to the same voltage level that is asserted on the V

IO

pin. The device is available with either 1.65–1.95 or 2.7–3.15 V . This allows the

IO

device to operate in 1.8 V or 3 V system environments as required.

For example, a V of 2.7 – 3.15 volts allows for I/O at the 3 volt level, driving

IO

and receiving signals to and from other 3 V devices on the same bus.

Requirements for Asynchronous Read

Operation (Non-Burst)

To read data from the memory array, the system must first assert a valid address

on A21–A0, while driving AVD# and CE# to V . WE# should remain at V . The

IL

IH

rising edge of AVD# latches the address. The data will appear on DQ15–DQ0.

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Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

Since the memory array is divided into four banks, each bank remains enabled

for read access until the command register contents are altered.

Address access time (t

) is equal to the delay from stable addresses to valid

ACC

output data. The chip enable access time (t ) is the delay from the stable ad-

CE

dresses and stable CE# to valid data at the outputs. The output enable access

time (t ) is the delay from the falling edge of OE# to valid data at the output.

OE

The internal state machine is set for reading array data upon device power-up,

or after a hardware reset. This ensures that no spurious alteration of the memory

content occurs during the power transition.

Requirements for Synchronous (Burst) Read Operation

The device is capable of continuous sequential burst operation and linear burst

operation of a preset length. When the device first powers up, it is enabled for

asynchronous read operation.

Prior to entering burst mode, the system should determine how many wait states

are desired for the initial word (t

) of each burst access, what mode of burst

IACC

operation is desired, which edge of the clock will be the active clock edge, and

how the RDY signal will transition with valid data. The system would then write

the burst mode configuration register command sequence. See “Set Burst Mode

Configuration Register Command Sequence” and “Command Definitions” for fur-

ther details.

Once the system has written the “Set Burst Mode Configuration Register” com-

mand sequence, the device is enabled for synchronous reads only.

The initial word is output t

after the active edge of the first CLK cycle. Sub-

IACC

sequent words are output t

after the active edge of each successive clock

BACC

cycle, which automatically increments the internal address counter. Note that the

device has a fixed internal address boundary that occurs every 64 words, starting

at address 00003Fh. During the time the device is outputting data at this fixed

internal address boundary (address 00003Fh, 00007Fh, 0000BFh, etc.), a two

cycle latency occurs before data appears for the next address (address 000040h,

000080h, 0000C0h, etc.). The RDY output indicates this condition to the system

by pulsing low. For standard handshaking devices, there is no two cycle latency

between 3Fh and 40h (or addresses offset from 3F and 40h by a multiple of 64).

See Table 10.

For reduced wait-state handshaking devices, if the address latched is 3Dh (or off-

set from 3Dh by a multiple of 64), an additional cycle latency occurs prior to the

initial access. If the address latched is 3Eh (or offset from 3Eh by a multiple of

64) two additional cycle latency occurs prior to the initial access and the 2 cycle

latency between 3Fh and 40h (or offset from 3Fh by a multiple of 64) will not oc-

cur. For 3Fh latched addresses (or offset from 3Fh by a multiple of 64) three

additional cycle latency occurs prior to the initial access and the 2 cycle latency

between 3Fh and 40h (or offset from these addresses by a multiple of 64) will not

occur.

The device will continue to output sequential burst data, wrapping around to ad-

dress 000000h after it reaches the highest addressable memory location, until

the system drives CE# high, RESET# low, or AVD# low in conjunction with a new

address. See Table 1, “Device Bus Operations,” on page 12.

If the host system crosses the bank boundary while reading in burst mode, and

the device is not programming or erasing, a two-cycle latency will occur as de-

scribed above in the subsequent bank. If the host system crosses the bank

May 9, 2006 25903C2

Am29BDS640G

13

D a t a S h e e t

boundary while the device is programming or erasing, the device will provide read

status information. The clock will be ignored. After the host has completed status

reads, or the device has completed the program or erase operation, the host can

restart a burst operation using a new address and AVD# pulse.

If the clock frequency is less than 6 MHz during a burst mode operation, addi-

tional latencies will occur. RDY indicates the length of the latency by pulsing low.

8-, 16-, and 32-Word Linear Burst with Wrap Around

The remaining three modes are of the linear wrap around design, in which a fixed

number of words are read from consecutive addresses. In each of these modes,

the burst addresses read are determined by the group within which the starting

address falls. The groups are sized according to the number of words read in a

single burst sequence for a given mode (see Table 2.)

Table 2. Burst Address Groups

Mode

8-word

16-word

32-word

Group Size

8 words

Group Address Ranges

0-7h, 8-Fh, 10-17h, ...

16 words

32 words

0-Fh, 10-1Fh, 20-2Fh, ...

00-1Fh, 20-3Fh, 40-5Fh, ...

As an example: if the starting address in the 8-word mode is 39h, the address

range to be read would be 38-3Fh, and the burst sequence would be 39-3A-3B-

3C-3D-3E-3F-38h-etc. The burst sequence begins with the starting address writ-

ten to the device, but wraps back to the first address in the selected group. In a

similar fashion, the 16-word and 32-word Linear Wrap modes begin their burst

sequence on the starting address written to the device, and then wrap back to

the first address in the selected address group. Note that in these three burst

read modes the address pointer does not cross the boundary that occurs

every 64 words; thus, no wait states are inserted (except during the ini-

tial access).

The RDY pin indicates when data is valid on the bus. The devices can wrap

through a maximum of 128 words of data (8 words up to 16 times, 16 words up

to 8 times, or 32 words up to 4 times) before requiring a new synchronous access

(latching of a new address).

Burst Mode Configuration Register

The device uses a configuration register to set the various burst parameters:

number of wait states, burst read mode, active clock edge, RDY configuration,

and synchronous mode active.

Reduced Wait-State Handshaking Option

The device can be equipped with a reduced wait-state handshaking feature that

allows the host system to simply monitor the RDY signal from the device to de-

termine when the initial word of burst data is ready to be read. The host system

should use the programmable wait state configuration to set the number of wait

states for optimal burst mode operation. The initial word of burst data is indicated

by the rising edge of RDY after OE# goes low.

The presence of the reduced wait-state handshaking feature may be verified by

writing the autoselect command sequence to the device. See “Autoselect Com-

mand Sequence” for details.

14

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

For optimal burst mode performance on devices without the reduced wait-state

handshaking option, the host system must set the appropriate number of wait

states in the flash device depending on clock frequency and the presence of a

boundary crossing. See “Set Burst Mode Configuration Register Command Se-

quence” section on page 26 section for more information. The device will

automatically delay RDY and data by one additional clock cycle when the starting

address is odd.

The autoselect function allows the host system to determine whether the flash

device is enabled for reduced wait-state handshaking. See the “Autoselect Com-

mand Sequence” section for more information.

Simultaneous Read/Write Operations with Zero Latency

This device is capable of reading data from one bank of memory while program-

ming or erasing in another bank of memory. An erase operation may also be

suspended to read from or program to another location within the same bank (ex-

cept the sector being erased). Figure 33, “Back-to-Back Read/Write Cycle

Timings,” on page 70 shows how read and write cycles may be initiated for simul-

taneous operation with zero latency. Refer to the DC Characteristics table for

read-while-program and read-while-erase current specifications.

Writing Commands/Command Sequences

The device has the capability of performing an asynchronous or synchronous

write operation. During a synchronous write operation, to write a command or

command sequence (which includes programming data to the device and erasing

sectors of memory), the system must drive AVD# and CE# to V , and OE# to

IL

V

when providing an address to the device, and drive WE# and CE# to V , and

IL

IH

OE# to V . when writing commands or data. During an asynchronous write op-

IH

eration, the system must drive CE#, WE#, and CLK to V and OE# to V when

IL

IH

providing an address, command, and data. The asynchronous and synchronous

programing operation is independent of the Set Device Read Mode bit in the Burst

Mode Configuration Register.

The device features an Unlock Bypass mode to facilitate faster programming.

Once the device enters the Unlock Bypass mode, only two write cycles are re-

quired to program a word, instead of four.

An erase operation can erase one sector, multiple sectors, or the entire device.

Table 8, “Programmable Wait State Settings,” on page 28 indicates the address

space that each sector occupies. The device address space is divided into four

banks: Banks B and C contain only 32 Kword sectors, while Banks A and D contain

both 8 Kword boot sectors in addition to 32 Kword sectors. A “bank address” is

the address bits required to uniquely select a bank. Similarly, a “sector address”

is the address bits required to uniquely select a sector.

I

in the DC Characteristics table represents the active current specification for

CC2

the write mode. The AC Characteristics section contains timing specification ta-

bles and timing diagrams for write operations.

Accelerated Program Operation

The device offers accelerated program operations through the ACC function. ACC

is primarily intended to allow faster manufacturing throughput at the factory.

If the system asserts V on this input, the device automatically enters the afore-

ID

mentioned Unlock Bypass mode and uses the higher voltage on the input to

reduce the time required for program operations. The system would use a two-

May 9, 2006 25903C2

Am29BDS640G

15

D a t a S h e e t

cycle program command sequence as required by the Unlock Bypass mode. Re-

moving V from the ACC input returns the device to normal operation. Note that

ID

sectors must be unlocked prior to raising ACC to V . Note that the ACC pin must

ID

not be at V for operations other than accelerated programming, or device dam-

ID

age may result. In addition, the ACC pin must not be left floating or unconnected;

inconsistent behavior of the device may result.

When at V , ACC locks all sectors. ACC should be at V for all other conditions.

IL

IH

Autoselect Functions

If the system writes the autoselect command sequence, the device enters the au-

toselect mode. The system can then read autoselect codes from the internal

register (which is separate from the memory array) on DQ15–DQ0. Autoselect

mode may only be entered and used when in the asynchronous read mode. Refer

to the “Autoselect Command Sequence” section on page 31 section for more

information.

Standby Mode

When the system is not reading or writing to the device, it can place the device

in the standby mode. In this mode, current consumption is greatly reduced, and

the outputs are placed in the high impedance state, independent of the OE#

input.

The device enters the CMOS standby mode when the CE# and RESET# inputs are

both held at V ± 0.2 V. The device requires standard access time (t ) for read

CC

CE

access, before it is ready to read data.

If the device is deselected during erasure or programming, the device draws ac-

tive current until the operation is completed.

I

in the DC Characteristics table represents the standby current specification.

CC3

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device energy consumption. While in

asynchronous mode, the device automatically enables this mode when addresses

remain stable for t + 60 ns. The automatic sleep mode is independent of the

ACC

CE#, WE#, and OE# control signals. Standard address access timings provide

new data when addresses are changed. While in sleep mode, output data is

latched and always available to the system. While in synchronous mode, the de-

vice automatically enables this mode when either the first active CLK edge occurs

after t

or the CLK runs slower than 5MHz. Note that a new burst operation is

ACC

required to provide new data.

I

in the “DC Characteristics” section on page 45 represents the automatic

CC4

sleep mode current specification.

RESET#: Hardware Reset Input

The RESET# input provides a hardware method of resetting the device to reading

array data. When RESET# is driven low for at least a period of t , the device im-

RP

mediately terminates any operation in progress, tristates all outputs, resets the

configuration register, and ignores all read/write commands for the duration of

the RESET# pulse. The device also resets the internal state machine to reading

array data. The operation that was interrupted should be reinitiated once the de-

vice is ready to accept another command sequence, to ensure data integrity.

16

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

Current is reduced for the duration of the RESET# pulse. When RESET# is held

at V ± 0.2 V, the device draws CMOS standby current (I

). If RESET# is held

SS

CC4

at V but not within V ± 0.2 V, the standby current will be greater.

IL

SS

RESET# may be tied to the system reset circuitry. A system reset would thus also

reset the Flash memory, enabling the system to read the boot-up firmware from

the Flash memory.

If RESET# is asserted during a program or erase operation, the device requires

a time of t

(during Embedded Algorithms) before the device is ready to read

READY

data again. If RESET# is asserted when a program or erase operation is not ex-

ecuting, the reset operation is completed within a time of t (not during

READY

Embedded Algorithms). The system can read data t

after RESET# returns to

RH

V .

IH

Refer to the AC Characteristics tables for RESET# parameters and to Figure 20,

“Reset Timings,” on page 57 for the timing diagram.

Output Disable Mode

When the OE# input is at V , output from the device is disabled. The outputs are

IH

placed in the high impedance state.

Hardware Data Protection

The command sequence requirement of unlock cycles for programming or erasing

provides data protection against inadvertent writes (refer to Table 13, “Command

Definitions,” on page 37 for command definitions).

The device offers two types of data protection at the sector level:

The sector lock/unlock command sequence disables or re-enables both pro-

gram and erase operations in any sector.

When WP# is at V , sectors 0 and 1 (bottom boot) or sectors 132 and 133

IL

(top boot) are locked.

When ACC is at V , all sectors are locked.

IL

The following hardware data protection measures prevent accidental erasure or

programming, which might otherwise be caused by spurious system level signals

during V power-up and power-down transitions, or from system noise.

CC

Write Protect (WP#)

The Write Protect (WP#) input provides a hardware method of protecting data

without using V .

ID

If the system asserts V on the WP# pin, the device disables program and erase

IL

functions in sectors 0 and 1 (bottom boot) or sectors 132 and 133 (top boot).

If the system asserts V on the WP# pin, the device reverts to whether the two

IH

outermost 8K Byte boot sectors were last set to be protected or unprotected.

Note that the WP# pin must not be left floating or unconnected; inconsistent be-

havior of the device may result.

Low V

Write Inhibit

CC

When V is less than V

, the device does not accept any write cycles. This pro-

LKO

CC

tects data during V power-up and power-down. The command register and all

CC

internal program/erase circuits are disabled, and the device resets to reading

array data. Subsequent writes are ignored until V is greater than V

. The sys-

CC

LKO

May 9, 2006 25903C2

Am29BDS640G

17

D a t a S h e e t

tem must provide the proper signals to the control inputs to prevent unintentional

writes when V is greater than V

.

CC

LKO

Write Pulse “Glitch” Protection

Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write

cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE# = V , CE# = V or WE# =

IL

IH

V . To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a

IH

logical one.

Power-Up Write Inhibit

If WE# = CE# = RESET# = V and OE# = V during power up, the device does

IL

IH

not accept commands on the rising edge of WE#. The internal state machine is

automatically reset to the read mode on power-up.

V

and V Power-up And Power-down Sequencing

IO

CC

The device imposes no restrictions on V and V power-up or power-down se-

CC

IO

quencing. Asserting RESET# to V is required during the entire V

and V

IO

IL

CC

power sequence until the respective supplies reach their operating voltages. Once

and V attain their respective operating voltages, de-assertion of RESET#

V

CC

IO

to V is permitted.

IH

Common Flash Memory Interface (CFI)

The Common Flash Interface (CFI) specification outlines device and host system

software interrogation handshake, which allows specific vendor-specified soft-

ware algorithms to be used for entire families of devices. Software support can

then be device-independent, JEDEC ID-independent, and forward- and back-

ward-compatible for the specified flash device families. Flash vendors can

standardize their existing interfaces for long-term compatibility.

This device enters the CFI Query mode when the system writes the CFI Query

command, 98h, to address 55h any time the device is ready to read array data.

The system can read CFI information at the addresses given in Tables 3-6. To ter-

minate reading CFI data, the system must write the reset command.

The system can also write the CFI query command when the device is in the au-

toselect mode. The device enters the CFI query mode, and the system can read

CFI data at the addresses given in Tables 3-6. The system must write the reset

command to return the device to reading array data.

For further information, please refer to the CFI Specification and CFI Publication

100, available via the web at the following URL: http://www.amd.com/flash/cfi.

Alternatively, contact an sales office or representative for copies of these

documents.

18

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

Table 3. CFI Query Identification String

Addresses

Data

Description

10h

11h

12h

0051h

0052h

0059h

Query Unique ASCII string “QRY”

13h

14h

0002h

0000h

Primary OEM Command Set

15h

16h

0040h

0000h

Address for Primary Extended Table

17h

18h

0000h

Alternate OEM Command Set (00h = none exists)

Address for Alternate OEM Extended Table (00h = none exists)

19h

1Ah

0000h

Table 4. System Interface String

Addresses

Data

Description

V

Min. (write/erase)

CC

1Bh

0017h

D7–D4: volt, D3–D0: 100 millivolt

V

Max. (write/erase)

CC

1Ch

0019h

D7–D4: volt, D3–D0: 100 millivolt

1Dh

1Eh

1Fh

20h

21h

22h

23h

24h

25h

26h

0000h

0004h

0000h

0009h

0000h

0004h

0000h

0004h

0000h

V

Min. voltage (00h = no V pin present)

PP

Max. voltage (00h = no V pin present)

PP

Typical timeout per single byte/word write 2^Nµs

Typical timeout for Min. size buffer write 2^N

s (00h = not supported)

µ

Typical timeout per individual block erase 2^Nms

Typical timeout for full chip erase 2^Nms (00h = not supported)

Max. timeout for byte/word write 2^Ntimes typical

Max. timeout for buffer write 2^Ntimes typical

Max. timeout per individual block erase 2^Ntimes typical

Max. timeout for full chip erase 2^Ntimes typical (00h = not supported)

May 9, 2006 25903C2

Am29BDS640G

19

D a t a S h e e t

Table 5. Device Geometry Definition

Addresses

Data

Description

27h

0017h

Device Size = 2^Nbyte

28h

29h

0001h

0000h

Flash Device Interface description (refer to CFI publication 100)

2Ah

2Bh

0000h

Max. number of bytes in multi-byte write = 2^N

(00h = not supported)

2Ch

0003h

Number of Erase Block Regions within device

2Dh

2Eh

2Fh

30h

0003h

0000h

0040h

0000h

Erase Block Region 1 Information

(refer to the CFI specification or CFI publication 100)

31h

32h

33h

34h

007Dh

0000h

0001h

Erase Block Region 2 Information

Erase Block Region 3 Information

Erase Block Region 4 Information

35h

36h

37h

38h

0003h

0000h

0040h

0000h

39h

3Ah

3Bh

3Ch

0000h

20

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

Table 6. Primary Vendor-Specific Extended Query

Addresses

Data

Description

40h

41h

42h

0050h

0052h

0049h

Query-unique ASCII string “PRI”

43h

44h

0031h

0033h

Major version number, ASCII

Minor version number, ASCII

Address Sensitive Unlock (Bits 1-0)

0 = Required, 1 = Not Required

45h

0004h

Silicon Technology (Bits 5-2) 0001 = 0.17 µm

Erase Suspend

46h

47h

48h

49h

4Ah

4Bh

4Ch

0002h

0001h

0000h

0005h

0063h

0001h

0000h

0 = Not Supported, 1 = To Read Only, 2 = To Read & Write

Sector Protect

0 = Not Supported, X = Number of sectors in per group

Sector Temporary Unprotect

00 = Not Supported, 01 = Supported

Sector Protect/Unprotect scheme

04 = 29LV800 mode

Simultaneous Operation

Number of Sectors in all banks except boot block

Burst Mode Type

00 = Not Supported, 01 = Supported

Page Mode Type

00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page

ACC (Acceleration) Supply Minimum

4Dh

4Eh

4Fh

00B5h

00C5h

00xxh

00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV

ACC (Acceleration) Supply Maximum

00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV

Top/Bottom Boot Sector Flag

02h = Bottom Boot Device, 03h = Top Boot Device

50h

57h

58h

59h

5Ah

5Bh

0000h

0004h

0023h

0020h

0023h

Program Suspend. 00h = not supported

Bank Organization: X = Number of banks

Bank A Region Information. X = Number of sectors in bank

Bank B Region Information. X = Number of sectors in bank

Bank C Region Information. X = Number of sectors in bank

Bank D Region Information. X = Number of sectors in bank

May 9, 2006 25903C2

Am29BDS640G

21

D a t a S h e e t

Table 7. Sector Address Table

Sector

SA0

Sector Size

8 Kwords

(x16) Address Range

000000h-001FFFh

002000h-003FFFh

004000h-005FFFh

006000h-007FFFh

008000h-00FFFFh

010000h-017FFFh

018000h-01FFFFh

020000h-027FFFh

028000h-02FFFFh

030000h-037FFFh

038000h-03FFFFh

040000h-047FFFh

048000h-04FFFFh

050000h-057FFFh

058000h-05FFFFh

060000h-067FFFh

068000h-06FFFFh

070000h-077FFFh

078000h-07FFFFh

080000h-087FFFh

088000h-08FFFFh

090000h-097FFFh

098000h-09FFFFh

0A0000h-0A7FFFh

0A8000h-0AFFFFh

0B0000h-0B7FFFh

0B8000h-0BFFFFh

0C0000h-0C7FFFh

0C8000h-0CFFFFh

0D0000h-0D7FFFh

0D8000h-0DFFFFh

0E0000h-0E7FFFh

0E8000h-0EFFFFh

0F0000h-0F7FFFh

0F8000h-0FFFFFh

SA1

8 Kwords

SA2

8 Kwords

SA3

8 Kwords

SA4

32 Kwords

SA5

SA6

SA7

SA8

SA9

SA10

SA11

SA12

SA13

SA14

SA15

SA16

SA17

SA18

SA19

SA20

SA21

SA22

SA23

SA24

SA25

SA26

SA27

SA28

SA29

SA30

SA31

SA32

SA33

SA34

Bank D

22

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

Table 7. Sector Address Table (Continued)

Sector

SA35

SA36

SA37

SA38

SA39

SA40

SA41

SA42

SA43

SA44

SA45

SA46

SA47

SA48

SA49

SA50

SA51

SA52

SA53

SA54

SA55

SA56

SA57

SA58

SA59

SA60

SA61

SA62

SA63

SA64

SA65

SA66

Sector Size

32 Kwords

(x16) Address Range

100000h-107FFFh

108000h-10FFFFh

110000h-117FFFh

118000h-11FFFFh

120000h-127FFFh

128000h-12FFFFh

130000h-137FFFh

138000h-13FFFFh

140000h-147FFFh

148000h-14FFFFh

150000h-157FFFh

158000h-15FFFFh

160000h-167FFFh

168000h-16FFFFh

170000h-177FFFh

178000h-17FFFFh

180000h-187FFFh

188000h-18FFFFh

190000h-197FFFh

198000h-19FFFFh

1A0000h-1A7FFFh

1A8000h-1AFFFFh

1B0000h-1B7FFFh

1B8000h-1BFFFFh

1C0000h-1C7FFFh

1C8000h-1CFFFFh

1D0000h-1D7FFFh

1D8000h-1DFFFFh

1E0000h-1E7FFFh

1E8000h-1EFFFFh

1F0000h-1F7FFFh

1F8000h-1FFFFFh

Bank C

May 9, 2006 25903C2

Am29BDS640G

23

D a t a S h e e t

Table 7. Sector Address Table (Continued)

Sector

SA67

SA68

SA69

SA70

SA71

SA72

SA73

SA74

SA75

SA76

SA77

SA78

SA79

SA80

SA81

SA82

SA83

SA84

SA85

SA86

SA87

SA88

SA89

SA90

SA91

SA92

SA93

SA94

SA95

SA96

SA97

SA98

Sector Size

32 Kwords

(x16) Address Range

200000h-207FFFh

208000h-20FFFFh

210000h-217FFFh

218000h-21FFFFh

220000h-227FFFh

228000h-22FFFFh

230000h-237FFFh

238000h-23FFFFh

240000h-247FFFh

248000h-24FFFFh

250000h-257FFFh

258000h-25FFFFh

260000h-267FFFh

268000h-26FFFFh

270000h-277FFFh

278000h-27FFFFh

280000h-287FFFh

288000h-28FFFFh

290000h-297FFFh

298000h-29FFFFh

2A0000h-2A7FFFh

2A8000h-2AFFFFh

2B0000h-2B7FFFh

2B8000h-2BFFFFh

2C0000h-2C7FFFh

2C8000h-2CFFFFh

2D0000h-2D7FFFh

2D8000h-2DFFFFh

2E0000h-2E7FFFh

2E8000h-2EFFFFh

2F0000h-2F7FFFh

2F8000h-2FFFFFh

Bank B

24

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

Table 7. Sector Address Table (Continued)

Sector

SA99

Sector Size

32K words

8K words

(x16) Address Range

300000h-307FFFh

308000h-30FFFFh

310000h-317FFFh

318000h-31FFFFh

320000h-327FFFh

328000h-32FFFFh

330000h-337FFFh

338000h-33FFFFh

340000h-347FFFh

348000h-34FFFFh

350000h-357FFFh

358000h-35FFFFh

360000h-367FFFh

368000h-36FFFFh

370000h-377FFFh

378000h-37FFFFh

380000h-387FFFh

388000h-38FFFFh

390000h-397FFFh

398000h-39FFFFh

3A0000h-3A7FFFh

3A8000h-3AFFFFh

3B0000h-3B7FFFh

3B8000h-3BFFFFh

3C0000h-3C7FFFh

3C8000h-3CFFFFh

3D0000h-3D7FFFh

3D8000h-3DFFFFh

3E0000h-3E7FFFh

3E8000h-3EFFFFh

3F0000h-3F7FFFh

3F8000h-3F9FFFh

3FA000h-3FBFFFh

3FC000h-3FDFFFh

3FE000h-3FFFFFh

SA100

SA101

SA102

SA103

SA104

SA105

SA106

SA107

SA108

SA109

SA110

SA111

SA112

SA113

SA114

SA115

SA116

SA117

SA118

SA119

SA120

SA121

SA122

SA123

SA124

SA125

SA126

SA127

SA128

SA129

SA130

SA131

SA132

SA133

Bank A

8K words

May 9, 2006 25903C2

Am29BDS640G

25

D a t a S h e e t

Command Definitions

Writing specific address and data commands or sequences into the command

register initiates device operations. Table 13, “Command Definitions,” on page 37

defines the valid register command sequences. Note that writing incorrect ad-

dress and data values or writing them in the improper sequence may place the

device in an unknown state. A reset command is required to return the device to

normal operation.

Refer to the AC Characteristics section for timing diagrams.

Reading Array Data

The device is automatically set to reading array data after device power-up. No

commands are required to retrieve data in asynchronous mode. Each bank is

ready to read array data after completing an Embedded Program or Embedded

Erase algorithm.

After the device accepts an Erase Suspend command, the corresponding bank

enters the erase-suspend-read mode, after which the system can read data from

any non-erase-suspended sector within the same bank. After completing a pro-

gramming operation in the Erase Suspend mode, the system may once again

read array data with the same exception. See the “Erase Suspend/Erase Resume

Commands” section on page 35 section for more information.

The system must issue the reset command to return a bank to the read (or erase-

suspend-read) mode if DQ5 goes high during an active program or erase opera-

tion, or if the bank is in the autoselect mode. See the “Reset Command” section

on page 31 section for more information.

See also “Requirements for Asynchronous Read Operation (Non-Burst)” and “Re-

quirements for Synchronous (Burst) Read Operation” sections for more

information. The Asynchronous Read and Synchronous/Burst Read tables provide

the read parameters, and Figures 11, 13, and 18 show the timings.

Set Burst Mode Configuration Register Command Sequence

The device uses a burst mode configuration register to set the various burst pa-

rameters: number of wait states, burst read mode, active clock edge, RDY

configuration, and synchronous mode active. The burst mode configuration reg-

ister must be set before the device will enter burst mode.

The burst mode configuration register is loaded with a three-cycle command se-

quence. The first two cycles are standard unlock sequences. On the third cycle,

the data should be C0h, address bits A11–A0 should be 555h, and address bits

A19–A12 set the code to be latched. The device will power up or after a hardware

reset with the default setting, which is in asynchronous mode. The register must

be set before the device can enter synchronous mode. The burst mode configu-

ration register can not be changed during device operations (program, erase, or

sector lock).

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Power-up/

Hardware Reset

Asynchronous Read

Mode Only

Set Burst Mode

Configuration Register

Command for

Configuration Register

Command for

Synchronous Mode

(A19 = 0)

Asynchronous Mode

(A19 = 1)

Synchronous Read

Mode Only

Figure 1. Synchronous/Asynchronous State Diagram

Read Mode Setting

On power-up or hardware reset, the device is set to be in asynchronous read

mode. This setting allows the system to enable or disable burst mode during sys-

tem operations. Address A19 determines this setting: “1’ for asynchronous mode,

“0” for synchronous mode.

Programmable Wait State Configuration

The programmable wait state feature informs the device of the number of clock

cycles that must elapse after AVD# is driven active before data will be available.

This value is determined by the input frequency of the device. Address bits A14–

A12 determine the setting (see Table 8).

The wait state command sequence instructs the device to set a particular number

of clock cycles for the initial access in burst mode. The number of wait states that

should be programmed into the device is directly related to the clock frequency.

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Table 8. Programmable Wait State Settings

Total Initial

A14

0

A13

0

A12

0

Access Cycles

2

3

4

5

6

7

0

1

0

1

0

1

0

1

0

1

Notes:

1. Upon power-up or hardware reset, the default setting is seven wait states.

2. RDY will default to being active with data when the Wait State Setting is set to a

total initial access cycle of 2.

3. Assumes even address.

It is recommended that the wait state command sequence be written, even if the

default wait state value is desired, to ensure the device is set as expected. A

hardware reset will set the wait state to the default setting.

Reduced Wait-State Handshaking Option

If the device is equipped with the reduced wait-state handshaking option, the

host system should set address bits A14–A12 to 010 for a clock frequency of 40

MHz or to 011 for a clock frequency of 54 MHz for the system/device to execute

at maximum speed.

Table 9 describes the typical number of clock cycles (wait states) for various

conditions.

Table 9. Initial Access Cycles vs. Frequency

Even

Initial

Addr.

with

Odd Initial

Addr.

with

System

Frequency

Range

Even

Initial

Addr.

Odd

Initial

Addr.

Device Speed

Rating

Boundary Boundary

6–11 MHz

2

3

4

5

2

3

4

5

6

3

4

5

6

7

4

5

6

7

8

12–23 MHz

24–33 MHz

34–40 MHz

40–47 MHz

48–54 MHz

40 MHz

54 MHz

Note: In the 8-, 16- and 32-word burst read modes, the address pointer does not

cross 64-word boundaries (addresses which are multiples of 3Fh).

The autoselect function allows the host system to determine whether the flash

device is enabled for reduced wait-state handshaking. See the “Autoselect Com-

mand Sequence” section for more information.

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Standard Handshaking Operation

For optimal burst mode performance on devices without the handshaking option,

the host system must set the appropriate number of wait states in the flash de-

vice depending on the clock frequency.

Table 10 describes the typical number of clock cycles (wait states) for various

conditions with A14–A12 set to 101.

Table 10. Wait States for Standard Handshaking

Typical No. of Clock Cycles after

AVD# Low

Conditions at Address

Initial address is even

Initial address is odd

40/54 MHz

7

Initial address is even,

and is at boundary crossing*

7

Initial address is odd,

and is at boundary crossing*

* In the 8-, 16- and 32-word burst read modes, the address pointer does not cross

64-word boundaries (addresses which are multiples of 3Fh).

Burst Read Mode Configuration

The device supports four different burst read modes: continuous mode, and 8,

16, and 32 word linear wrap around modes. A continuous sequence begins at the

starting address and advances the address pointer until the burst operation is

complete. If the highest address in the device is reached during the continuous

burst read mode, the address pointer wraps around to the lowest address.

For example, an eight-word linear burst with wrap around begins on the starting

burst address written to the device and then proceeds until the next 8 word

boundary. The address pointer then returns to the first word of the burst se-

quence, wrapping back to the starting location. The sixteen- and thirty-two linear

wrap around modes operate in a fashion similar to the eight-word mode.

Table 11 shows the address bits and settings for the four burst read modes.

Table 11. Burst Read Mode Settings

Address Bits

Burst Modes

A16

0

A15

Continuous

0

1

0

1

8-word linear wrap around

16-word linear wrap around

32-word linear wrap around

0

1

Note: Upon power-up or hardware reset the default setting is continuous.

Burst Active Clock Edge Configuration

By default, the device will deliver data on the rising edge of the clock after the

initial synchronous access time. Subsequent outputs will also be on the following

rising edges, barring any delays. The device can be set so that the falling clock

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edge is active for all synchronous accesses. Address bit A17 determines this set-

ting; “1” for rising active, “0” for falling active.

RDY Configuration

By default, the device is set so that the RDY pin will output V

whenever there

OH

is valid data on the outputs. The device can be set so that RDY goes active one

data cycle before active data. Address bit A18 determines this setting; “1” for

RDY active with data, “0” for RDY active one clock cycle before valid data.

Configuration Register

Table 12 shows the address bits that determine the configuration register settings

for various device functions.

Table 12. Burst Mode Configuration Register

Address Bit

Function

Settings (Binary)

0 = Synchronous Read (Burst Mode) Enabled

1 = Asynchronous Mode (default)

A19

Set Device Read Mode

0 = RDY active one clock cycle before data

1 = RDY active with data (default)

A18

RDY

0 = Burst starts and data is output on the falling edge of CLK

1 = Burst starts and data is output on the rising edge of CLK (default)

A17

A16

Clock

00 = Continuous (default)

01 = 8-word linear with wrap around

10 = 16-word linear with wrap around

11 = 32-word linear with wrap around

Burst Read Mode

A15

A14

A13

000 = Data is valid on the 2nd active CLK edge after AVD# transition to V

001 = Data is valid on the 3rd active CLK edge after AVD# transition to V

010 = Data is valid on the 4th active CLK edge after AVD# transition to V

011 = Data is valid on the 5th active CLK edge after AVD# transition to V

100 = Data is valid on the 6th active CLK edge after AVD# transition to V

IH

Programmable

Wait State

A12

101 = Data is valid on the 7th active CLK edge after AVD# transition to V (default)

IH

Note: Device will be in the default state upon power-up or hardware reset.

Sector Lock/Unlock Command Sequence

The sector lock/unlock command sequence allows the system to determine which

sectors are protected from accidental writes. When the device is first powered up,

all sectors are locked. To unlock a sector, the system must write the sector lock/

unlock command sequence. In the first and second cycles, the address must point

to the bank that contains the sector(s) to be locked or unlocked. The first and

second cycle data is 60h. In the third cycle, the address must point to the target

sector, and A6 is used to specify a lock (A6 = V ) or unlock (A6 = V ) operation.

IL

IH

The third cycle data is 60h. After the third cycle, the system can continue to lock

or unlock additional sectors in the same bank or exit the sector lock/unlock se-

quence by writing the reset command (F0h).

It is not possible to read from the bank selected for sector lock/unlock operations.

To enable such read operations, write the reset command.

Note that the last two outermost boot sectors can be locked by taking the WP#

signal to V .

IL

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Reset Command

Writing the reset command resets the banks to the read or erase-suspend-read

mode. Address bits are don’t cares for this command.

The reset command may be written between the sequence cycles in an erase

command sequence before erasing begins. This resets the bank to which the sys-

tem was writing to the read mode. Once erasure begins, however, the device

ignores reset commands until the operation is complete.

The reset command may be written between the sequence cycles in a program

command sequence before programming begins (prior to the third cycle). This re-

sets the bank to which the system was writing to the read mode. If the program

command sequence is written to a bank that is in the Erase Suspend mode, writ-

ing the reset command returns that bank to the erase-suspend-read mode. Once

programming begins, however, the device ignores reset commands until the op-

eration is complete.

The reset command may be written between the sequence cycles in an autoselect

command sequence. Once in the autoselect mode, the reset command must be

written to return to the read mode. If a bank entered the autoselect mode while

in the Erase Suspend mode, writing the reset command returns that bank to the

erase-suspend-read mode.

If DQ5 goes high during a program or erase operation, writing the reset command

returns the banks to the read mode (or erase-suspend-read mode if that bank

was in Erase Suspend).

The reset command is used to exit the sector lock/unlock sequence. This com-

mand is required before reading from the bank selected for sector lock/unlock

operations.

Autoselect Command Sequence

The autoselect command sequence allows the host system to access the manu-

facturer and device codes, and determine whether or not a sector is protected.

Table 13, “Command Definitions,” on page 37 shows the address and data re-

quirements. The autoselect command sequence may be written to an address

within a bank that is either in the read or erase-suspend-read mode. The autose-

lect command may not be written while the device is actively programming or

erasing in the other bank.

The autoselect command sequence is initiated by first writing two unlock cycles.

This is followed by a third write cycle that contains the bank address and the au-

toselect command. The bank then enters the autoselect mode. No subsequent

data will be made available if the autoselect data is read in synchronous mode.

The system may read at any address within the same bank any number of times

without initiating another autoselect command sequence. The following table de-

scribes the address requirements for the various autoselect functions, and the

resulting data. BA represents the bank address, and SA represents the sector ad-

dress. The device ID is read in three cycles.

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D a t a S h e e t

Description

Manufacturer ID

Address

Read Data

0001h

(BA) + 00h

(BA) + 01h

Device ID, Word 1

Device ID, Word 2

Device ID, Word 3

227Eh

2204h (1.8 V V , top boot),

IO

2224h (1.8 V V , bottom boot),

IO

(BA) + 0Eh

2214h (3.0 V V , top boot),

IO

2234h (3.0 V V , bottom boot)

IO

(BA) + 0Fh

(SA) + 02h

2201h

Sector Block

Lock/Unlock

0001 (locked),

0000 (unlocked)

43h (reduced wait-state),

42h (standard)

Handshaking

(BA) + 03h

The system must write the reset command to return to the read mode (or erase-

suspend-read mode if the bank was previously in Erase Suspend).

Program Command Sequence

Programming is a four-bus-cycle operation. The program command sequence is

initiated by writing two unlock write cycles, followed by the program set-up com-

mand. The program address and data are written next, which in turn initiate the

Embedded Program algorithm. The system is not required to provide further con-

trols or timings. The device automatically provides internally generated program

pulses and verifies the programmed cell margin. Table 13 shows the address and

data requirements for the program command sequence.

When the Embedded Program algorithm is complete, that bank then returns to

the read mode and addresses are no longer latched. The system can determine

the status of the program operation by monitoring DQ7 or DQ6/DQ2. Refer to the

“Write Operation Status” section on page 38 section for information on these sta-

tus bits.

Any commands written to the device during the Embedded Program Algorithm

are ignored. Note that a hardware reset immediately terminates the program op-

eration. The program command sequence should be reinitiated once that bank

has returned to the read mode, to ensure data integrity.

Programming is allowed in any sequence and across sector boundaries. A bit can-

not be programmed from “0” back to a “1.” Attempting to do so may cause that

bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bit to indicate the oper-

ation was successful. However, a succeeding read will show that the data is still

“0.” Only erase operations can convert a “0” to a “1.”

Unlock Bypass Command Sequence

The unlock bypass feature allows the system to primarily program to a bank

faster than using the standard program command sequence. The unlock bypass

command sequence is initiated by first writing two unlock cycles. This is followed

by a third write cycle containing the unlock bypass command, 20h. That bank

then enters the unlock bypass mode. A two-cycle unlock bypass program com-

mand sequence is all that is required to program in this mode. The first cycle in

this sequence contains the unlock bypass program command, A0h; the second

cycle contains the program address and data. Additional data is programmed in

the same manner. This mode dispenses with the initial two unlock cycles required

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D a t a S h e e t

in the standard program command sequence, resulting in faster total program-

ming time. The host system may also initiate the chip erase and sector erase

sequences in the unlock bypass mode. The erase command sequences are four

cycles in length instead of six cycles. Table 13, “Command Definitions,” on

page 37 shows the requirements for the unlock bypass command sequences.

During the unlock bypass mode, only the Unlock Bypass Program, Unlock Bypass

Sector Erase, Unlock Bypass Chip Erase, and Unlock Bypass Reset commands are

valid. To exit the unlock bypass mode, the system must issue the two-cycle un-

lock bypass reset command sequence. The first cycle must contain the bank

address and the data 90h. The second cycle need only contain the data 00h. The

bank then returns to the read mode.

The device offers accelerated program operations through the ACC input. When

the system asserts V on this input, the device automatically enters the Unlock

ID

Bypass mode. The system may then write the two-cycle Unlock Bypass program

command sequence. The device uses the higher voltage on the ACC input to ac-

celerate the operation.

Figure 2 illustrates the algorithm for the program operation. Refer to the Erase/

Program Operations table in the AC Characteristics section for parameters, and

Figure 21, “Asynchronous Program Operation Timings,” on page 59 for timing

diagrams.

START

Write Erase

Command Sequence

Data Poll

from System

Embedded

Erase

algorithm

in progress

No

Data = FFh?

Yes

Erasure Completed

Notes:

1. See Table 13 for erase command sequence.

2. See the section on DQ3 for information on the sector erase timer.

Figure 2. Erase Operation

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Chip Erase Command Sequence

Chip erase is a six bus cycle operation. The chip erase command sequence is ini-

tiated by writing two unlock cycles, followed by a set-up command. Two

additional unlock write cycles are then followed by the chip erase command,

which in turn invokes the Embedded Erase algorithm. The device does not require

the system to preprogram prior to erase. The Embedded Erase algorithm auto-

matically preprograms and verifies the entire memory for an all zero data pattern

prior to electrical erase. The system is not required to provide any controls or tim-

ings during these operations. Table 13, “Command Definitions,” on page 37

shows the address and data requirements for the chip erase command sequence.

When the Embedded Erase algorithm is complete, that bank returns to the read

mode and addresses are no longer latched. The system can determine the status

of the erase operation by using DQ7 or DQ6/DQ2. Refer to the “Write Operation

Status” section for information on these status bits.

Any commands written during the chip erase operation are ignored. However,

note that a hardware reset immediately terminates the erase operation. If that

occurs, the chip erase command sequence should be reinitiated once that bank

has returned to reading array data, to ensure data integrity.

The host system may also initiate the chip erase command sequence while the

device is in the unlock bypass mode. The command sequence is two cycles in

length instead of six cycles. See Table 13 for details on the unlock bypass com-

mand sequences.

Figure 2 illustrates the algorithm for the erase operation. Refer to the Erase/Pro-

gram Operations table in the AC Characteristics section for parameters and timing

diagrams.

Sector Erase Command Sequence

Sector erase is a six bus cycle operation. The sector erase command sequence is

initiated by writing two unlock cycles, followed by a set-up command. Two addi-

tional unlock cycles are written, and are then followed by the address of the

sector to be erased, and the sector erase command. Table 13 shows the address

and data requirements for the sector erase command sequence.

The device does not require the system to preprogram prior to erase. The Em-

bedded Erase algorithm automatically programs and verifies the entire memory

for an all zero data pattern prior to electrical erase. The system is not required to

provide any controls or timings during these operations.

After the command sequence is written, a sector erase time-out of no less than

35 µs occurs. During the time-out period, additional sector addresses and sector

erase commands may be written. Loading the sector erase buffer may be done

in any sequence, and the number of sectors may be from one sector to all sectors.

The time between these additional cycles must be less than 50 µs, otherwise era-

sure may begin. Any sector erase address and command following the exceeded

time-out may or may not be accepted. It is recommended that processor inter-

rupts be disabled during this time to ensure all commands are accepted. The

interrupts can be re-enabled after the last Sector Erase command is written. Any

command other than Sector Erase or Erase Suspend during the time-out period

resets that bank to the read mode. The system must rewrite the command se-

quence and any additional addresses and commands.

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The system can monitor DQ3 to determine if the sector erase timer has timed out

(See “DQ3: Sector Erase Timer” section on page 43.). The time-out begins from

the rising edge of the final WE# pulse in the command sequence.

When the Embedded Erase algorithm is complete, the bank returns to reading

array data and addresses are no longer latched. Note that while the Embedded

Erase operation is in progress, the system can read data from the non-erasing

bank. The system can determine the status of the erase operation by reading

DQ7 or DQ6/DQ2 in the erasing bank. Refer to the “Write Operation Status” sec-

tion on page 38 section for information on these status bits.

Once the sector erase operation has begun, only the Erase Suspend command is

valid. All other commands are ignored. However, note that a hardware reset im-

mediately terminates the erase operation. If that occurs, the sector erase

command sequence should be reinitiated once that bank has returned to reading

array data, to ensure data integrity.

The host system may also initiate the sector erase command sequence while the

device is in the unlock bypass mode. The command sequence is four cycles cycles

in length instead of six cycles.

Figure 2 illustrates the algorithm for the erase operation. Refer to the Erase/Pro-

gram Operations table in the AC Characteristics section for parameters and timing

diagrams.

Erase Suspend/Erase Resume Commands

The Erase Suspend command, B0h, allows the system to interrupt a sector erase

operation and then read data from, or program data to, any sector not selected

for erasure. The bank address is required when writing this command. This com-

mand is valid only during the sector erase operation, including the minimum 50

µs time-out period during the sector erase command sequence. The Erase Sus-

pend command is ignored if written during the chip erase operation or Embedded

Program algorithm.

When the Erase Suspend command is written during the sector erase operation,

the device requires a maximum of 35 µs to suspend the erase operation. How-

ever, when the Erase Suspend command is written during the sector erase time-

out, the device immediately terminates the time-out period and suspends the

erase operation.

After the erase operation has been suspended, the bank enters the erase-sus-

pend-read mode. The system can read data from or program data to any sector

not selected for erasure. (The device “erase suspends” all sectors selected for

erasure.) Reading at any address within erase-suspended sectors produces sta-

tus information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2

together, to determine if a sector is actively erasing or is erase-suspended. Refer

to the Write Operation Status section for information on these status bits.

After an erase-suspended program operation is complete, the bank returns to the

erase-suspend-read mode. The system can determine the status of the program

operation using the DQ7 or DQ6 status bits, just as in the standard program op-

eration. Refer to the “Write Operation Status” section for more information.

In the erase-suspend-read mode, the system can also issue the autoselect com-

mand sequence. Refer to the “Autoselect Functions” section on page 16 and

“Autoselect Command Sequence” section on page 31 sections for details.

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D a t a S h e e t

To resume the sector erase operation, the system must write the Erase Resume

command. The bank address of the erase-suspended bank is required when writ-

ing this command. Further writes of the Resume command are ignored. Another

Erase Suspend command can be written after the chip has resumed erasing.

START

Write Program

Command Sequence

Data Poll

from System

Embedded

Program

algorithm

in progress

Verify Data?

No

Yes

No

Increment Address

Last Address?

Yes

Programming

Completed

Note: See Table 13 for program command sequence.

Figure 3. Program Operation

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D a t a S h e e t

Command Definitions

Table 13. Command Definitions

Bus Cycles (Notes 1–5)

Third Fourth

Command Sequence

(Notes)

First

Second

Fifth

Sixth

Addr Data Addr Data

Addr

Data

Addr

Data

Addr

Data

Addr Data

Asynchronous Read (6)

Reset (7)

1

4

RA

RD

F0

XXX

555

Manufacturer ID

AA

2AA

55

(BA)555

90

(BA)X00

(BA)X01

0001

227E

(BA)X

0E

(BA)

2201

X0F

Device ID (9)

6

555

AA

(Note 9)

Sector Lock Verify (10)

Handshaking Option (11)

Program

4

3

2

6

1

3

555

XXX

BA

AA

A0

80

90

AA

B0

30

60

2AA

PA

55

PD

30

10

00

55

(SA)555

(BA)555

555

90

A0

20

(SA)X02 0000/0001

(BA)X03 0042/0043

PA

Data

Unlock Bypass

555

Unlock Bypass Program (12)

Unlock Bypass Sector Erase (12)

Unlock Bypass Chip Erase (12)

Unlock Bypass Reset (13)

Chip Erase

SA

XXX

2AA

555

BA

555

80

555

AA

2AA

55

555

SA

10

30

Sector Erase

Erase Suspend (7, 14)

Erase Resume (15)

BA

Sector Lock/Unlock (7)

BA

60

55

SLA

60

C0

Set Burst Mode

Configuration Register (16)

3

1

555

55

AA

98

2AA

(CR)555

CFI Query (17)

Legend:

X = Don’t care

RA = Address of the memory location to be read.

RD = Data read from location RA during read operation.

PA = Address of the memory location to be programmed. Addresses

latch on the rising edge of the AVD# pulse.

PD = Data to be programmed at location PA. Data latches on the

rising edge of WE# pulse.

SA = Address of the sector to be verified (in autoselect mode) or

erased. Address bits A21–A14 uniquely select any sector.

BA = Address of the bank (A21, A20) that is being switched to

Autoselect mode, is in bypass mode, is being erased, or is being

selected for sector lock/unlock.

SLA = Address of the sector to be locked. Set sector address (SA) and

either A6 = 1 for unlocked or A6 = 0 for locked.

CR = Configuration Register address bits A19–A12.

Notes:

1. See Table 1 for description of bus operations.

2. All values are in hexadecimal.

10. The data is 0000h for an unlocked sector and 0001h for a locked

sector

11. The data is 0043h for handshaking provided and 0042h for

handshaking not provided.

3. Except for the read cycle and the fourth cycle of the autoselect

command sequence, all bus cycles are write cycles.

12. The Unlock Bypass command sequence is required prior to this

command sequence.

4. Data bits DQ15–DQ8 are don’t care in command sequences,

except for RD and PD.

13. The Unlock Bypass Reset command is required to return to

reading array data when the bank is in the unlock bypass mode.

14. The system may read and program in non-erasing sectors, or

enter the autoselect mode, when in the Erase Suspend mode.

The Erase Suspend command is valid only during a sector erase

operation, and requires the bank address.

15. The Erase Resume command is valid only during the Erase

Suspend mode, and requires the bank address.

16. See “Set Burst Mode Configuration Register Command

Sequence” for details.

5. Unless otherwise noted, address bits A21–A12 are don’t cares.

6. No unlock or command cycles required when bank is reading

array data.

7. The Reset command is required to return to reading array data

(or to the erase-suspend-read mode if previously in Erase

Suspend) when a bank is in the autoselect mode, or if DQ5 goes

high (while the bank is providing status information) or

performing sector lock/unlock.

8. The fourth cycle of the autoselect command sequence is a read

cycle. The system must provide the bank address. See the

Autoselect Command Sequence section for more information.

9. The data in the fifth cycle is 2204h for 1.8 V V_IO, and 2214h for

3.0 V V_IO(top boot); 2224h for 1.8 V V_IO, and 2234h for 3.0 V

17. Command is valid when device is ready to read array data or

when device is in autoselect mode.

V_IO(bottom boot).

May 9, 2006 25903C2

Am29BDS640G

37

D a t a S h e e t

Write Operation Status

The device provides several bits to determine the status of a program or erase

operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 15, “Write Operation Status,”

on page 43 and the following subsections describe the function of these bits. DQ7

and DQ6 each offers a method for determining whether a program or erase op-

eration is complete or in progress.

DQ7: Data# Polling

The Data# Polling bit, DQ7, indicates to the host system whether an Embedded

Program or Erase algorithm is in progress or completed, or whether a bank is in

Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse

in the command sequence.

During the Embedded Program algorithm, the device outputs on DQ7 the com-

plement of the datum programmed to DQ7. This DQ7 status also applies to

programming during Erase Suspend. When the Embedded Program algorithm is

complete, the device outputs the datum programmed to DQ7. The system must

provide the program address to read valid status information on DQ7. If a pro-

gram address falls within a protected sector, Data# Polling on DQ7 is active for

approximately 1 µs, then that bank returns to the read mode.

During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7.

When the Embedded Erase algorithm is complete, or if the bank enters the Erase

Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide

an address within any of the sectors selected for erasure to read valid status in-

formation on DQ7.

After an erase command sequence is written, if all sectors selected for erasing

are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the

bank returns to the read mode. If not all selected sectors are protected, the Em-

bedded Erase algorithm erases the unprotected sectors, and ignores the selected

sectors that are protected. However, if the system reads DQ7 at an address within

a protected sector, the status may not be valid.

Just prior to the completion of an Embedded Program or Erase operation, DQ7

may change asynchronously with DQ6–DQ0 while Output Enable (OE#) is as-

serted low. That is, the device may change from providing status information to

valid data on DQ7. Depending on when the system samples the DQ7 output, it

may read the status or valid data. Even if the device has completed the program

or erase operation and DQ7 has valid data, the data outputs on DQ6–DQ0 may

be still invalid. Valid data on DQ7–DQ0 will appear on successive read cycles.

Table 15 shows the outputs for Data# Polling on DQ7. Figure 3 shows the Data#

Polling

algorithm.

Figure 27,

“Data#

Polling

Timings

(During Embedded Algorithm),” on page 65 in the AC Characteristics section

shows the Data# Polling timing diagram.

38

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

START

Read DQ7–DQ0

Addr = VA

Yes

DQ7 = Data?

No

DQ5 = 1?

Yes

Read DQ7–DQ0

Addr = VA

Yes

DQ7 = Data?

No

PASS

FAIL

Notes:

1. VA = Valid address for programming. During a sector erase operation, a valid

address is any sector address within the sector being erased. During chip erase, a

valid address is any non-protected sector address.

2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simulta-

neously with DQ5.

Figure 4. Data# Polling Algorithm

May 9, 2006 25903C2

Am29BDS640G

39

D a t a S h e e t

RDY: Ready

The RDY is a dedicated output that, by default, indicates (when at logic low) the

system should wait 1 clock cycle before expecting the next word of data. Using

the RDY Configuration Command Sequence, RDY can be set so that a logic low

indicates the system should wait 2 clock cycles before expecting valid data.

RDY functions only while reading data in burst mode. The following conditions

cause the RDY output to be low: during the initial access (in burst mode), and

after the boundary that occurs every 64 words beginning with the 64th address,

3Fh.

DQ6: Toggle Bit I

Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm

is in progress or complete, or whether the device has entered the Erase Suspend

mode. Toggle Bit I may be read at any address in the same bank, and is valid

after the rising edge of the final WE# pulse in the command sequence (prior to

the program or erase operation), and during the sector erase time-out.

During an Embedded Program or Erase algorithm operation, successive read cy-

cles to any address cause DQ6 to toggle. When the operation is complete, DQ6

stops toggling.

After an erase command sequence is written, if all sectors selected for erasing

are protected, DQ6 toggles for approximately 100 µs, then returns to reading

array data. If not all selected sectors are protected, the Embedded Erase algo-

rithm erases the unprotected sectors, and ignores the selected sectors that are

protected.

The system can use DQ6 and DQ2 together to determine whether a sector is ac-

tively erasing or is erase-suspended. When the device is actively erasing (that is,

the Embedded Erase algorithm is in progress), DQ6 toggles. When the device en-

ters the Erase Suspend mode, DQ6 stops toggling. However, the system must

also use DQ2 to determine which sectors are erasing or erase-suspended. Alter-

natively, the system can use DQ7 (see the subsection on DQ7: Data# Polling).

If a program address falls within a protected sector, DQ6 toggles for approxi-

mately 1 ms after the program command sequence is written, then returns to

reading array data.

DQ6 also toggles during the erase-suspend-program mode, and stops toggling

once the Embedded Program algorithm is complete.

See the following for additional information: Figure 4 (toggle bit flowchart), DQ6:

Toggle Bit

I

(description), Figure 28, “Toggle Bit Timings

(During Embedded Algorithm),” on page 65 (toggle bit timing diagram), and

Table 14, “DQ6 and DQ2 Indications,” on page 42.

40

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

START

Read DQ7–DQ0

No

Toggle Bit

= Toggle?

Yes

No

DQ5 = 1?

Yes

Read DQ7–DQ0

Twice

Toggle Bit

= Toggle?

No

Yes

Program/Erase

Operation Not

Complete, Write

Reset Command

Program/Erase

Operation Complete

Note: The system should recheck the toggle bit even if DQ5 = “1” because the toggle

bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2

for more information.

Figure 5. Toggle Bit Algorithm

DQ2: Toggle Bit II

The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular

sector is actively erasing (that is, the Embedded Erase algorithm is in progress),

or whether that sector is erase-suspended. Toggle Bit II is valid after the rising

edge of the final WE# pulse in the command sequence.

DQ2 toggles when the system reads at addresses within those sectors that have

been selected for erasure. But DQ2 cannot distinguish whether the sector is ac-

tively erasing or is erase-suspended. DQ6, by comparison, indicates whether the

device is actively erasing, or is in Erase Suspend, but cannot distinguish which

May 9, 2006 25903C2

Am29BDS640G

41

D a t a S h e e t

sectors are selected for erasure. Thus, both status bits are required for sector and

mode information. Refer to Table 14 to compare outputs for DQ2 and DQ6.

See the following for additional information: Figure 5, “Toggle Bit Algorithm,” on

page 41, See “DQ6: Toggle Bit I” on page 40., Figure 28, “Toggle Bit Timings

(During Embedded Algorithm),” on page 65, and Table 14, “DQ6 and DQ2 Indi-

cations,” on page 42.

Table 14. DQ6 and DQ2 Indications

If device is

and the system reads

then DQ6

and DQ2

programming,

at any address,

toggles,

does not toggle.

at an address within a sector

selected for erasure,

toggles,

also toggles.

does not toggle.

toggles.

actively erasing,

erase suspended,

at an address within sectors not

selected for erasure,

at an address within a sector

selected for erasure,

does not toggle,

returns array data,

toggles,

at an address within sectors not

returns array data. The system can read

from any sector not selected for erasure.

selected for erasure,

programming in

erase suspend

at any address,

is not applicable.

Reading Toggle Bits DQ6/DQ2

Refer to Figure 4 for the following discussion. Whenever the system initially be-

gins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to

determine whether a toggle bit is toggling. Typically, the system would note and

store the value of the toggle bit after the first read. After the second read, the

system would compare the new value of the toggle bit with the first. If the toggle

bit is not toggling, the device has completed the program or erase operation. The

system can read array data on DQ7–DQ0 on the following read cycle.

However, if after the initial two read cycles, the system determines that the toggle

bit is still toggling, the system also should note whether the value of DQ5 is high

(see the section on DQ5). If it is, the system should then determine again

whether the toggle bit is toggling, since the toggle bit may have stopped toggling

just as DQ5 went high. If the toggle bit is no longer toggling, the device has suc-

cessfully completed the program or erase operation. If it is still toggling, the

device did not completed the operation successfully, and the system must write

the reset command to return to reading array data.

The remaining scenario is that the system initially determines that the toggle bit

is toggling and DQ5 has not gone high. The system may continue to monitor the

toggle bit and DQ5 through successive read cycles, determining the status as de-

scribed in the previous paragraph. Alternatively, it may choose to perform other

system tasks. In this case, the system must start at the beginning of the algo-

rithm when it returns to determine the status of the operation (top of Figure 4).

DQ5: Exceeded Timing Limits

DQ5 indicates whether the program or erase time has exceeded a specified inter-

nal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that

the program or erase cycle was not successfully completed.

42

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

The device may output a “1” on DQ5 if the system tries to program a “1” to a

location that was previously programmed to “0.” Only an erase operation can

change a “0” back to a “1.” Under this condition, the device halts the operation,

and when the timing limit has been exceeded, DQ5 produces a “1.”

Under both these conditions, the system must write the reset command to return

to the read mode (or to the erase-suspend-read mode if a bank was previously

in the erase-suspend-program mode).

DQ3: Sector Erase Timer

After writing a sector erase command sequence, the system may read DQ3 to de-

termine whether or not erasure has begun. (The sector erase timer does not

apply to the chip erase command.) If additional sectors are selected for erasure,

the entire time-out also applies after each additional sector erase command.

When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the

time between additional sector erase commands from the system can be as-

sumed to be less than 50 µs, the system need not monitor DQ3. See also the

Sector Erase Command Sequence section.

After the sector erase command is written, the system should read the status of

DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted

the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase

algorithm has begun; all further commands (except Erase Suspend) are ignored

until the erase operation is complete. If DQ3 is “0,” the device will accept addi-

tional sector erase commands. To ensure the command has been accepted, the

system software should check the status of DQ3 prior to and following each sub-

sequent sector erase command. If DQ3 is high on the second status check, the

last command might not have been accepted.

Table 15 shows the status of DQ3 relative to the other status bits.

Table 15. Write Operation Status

DQ7

DQ5

DQ2

Status

(Note 2)

DQ6

(Note 1)

DQ3

N/A

1

(Note 2)

Embedded Program Algorithm

Embedded Erase Algorithm

Erase

DQ7#

0

Toggle

0

No toggle

Toggle

Standard

Mode

1

No toggle

0

N/A

Toggle

Suspended Sector

Erase-Suspend-

Read (Note 4)

Erase

Suspend

Mode

Non-EraseSuspended

Sector

Data

0

Data

N/A

Data

N/A

Erase-Suspend-Program

DQ7#

Toggle

Notes:

1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing

limits. Refer to the section on DQ5 for more information.

2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for

further details.

3. When reading write operation status bits, the system must always provide the bank address where the Embedded

Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank.

4. The system may read either asynchronously or synchronously (burst) while in erase suspend. RDY will function ex-

actly as in non-erase-suspended mode.

May 9, 2006 25903C2

Am29BDS640G

43

D a t a S h e e t

Absolute Maximum Ratings

Storage Temperature, Plastic Packages. . . . . . . . . . . . . . . . –65°C to +150°C

Ambient Temperature with Power Applied . . . . . . . . . . . . . . –65°C to +125°C

Voltage with Respect to Ground:

All Inputs and I/Os except as noted below (Note 1) . . . . –0.5 V to V + 0.5 V

IO

V

(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +2.5 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +3.5 V

CC

IO

ACC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V

Output Short Circuit Current (Note 3)100 mA

Notes:

1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs

or I/Os may undershoot V_SSto –2.0 V for periods of up to 20 ns during voltage

transitions inputs might overshoot to V_CC+0.5 V for periods up to 20 ns. See

Figure 6. Maximum DC voltage on input or I/Os is V_CC+ 0.5 V. During voltage

transitions outputs may overshoot to V_CC+ 2.0 V for periods up to 20 ns. See

Figure 7.

2. No more than one output may be shorted to ground at a time. Duration of the

short circuit should not be greater than one second.

3. Stresses above those listed under “Absolute Maximum Ratings” may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the

device at these or any other conditions above those indicated in the operational

sections of this data sheet is not implied. Exposure of the device to absolute max-

imum rating conditions for extended periods may affect device reliability.

20 ns

V

+0.8 V

CC

+2.0 V

V

–0.5 V

–2.0 V

CC

+0.5 V

2.0 V

20 ns

Figure 6. Maximum Negative

Overshoot Waveform

Figure 7. Maximum Positive

Overshoot Waveform

Operating Ranges

Industrial (I) Devices

Ambient Temperature (T ) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C

A

Supply Voltages

V

Supply Voltages. . . . . . . . . . . . . . . . . . . . . . . . . . . .+1.65 V to +1.95 V

CC

IO

Supply Voltages:

V

_IO≤ V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.65 V to +1.95 V

CC

V

> V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.7 to +3.15 V

CC

IO

Note: Operating ranges define those limits between which the functionality of the de-

vice is guaranteed.

44

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

DC Characteristics

CMOS Compatible

Parameter Description

Test Conditions (Note 1,2)

Min

Typ.

Max

±1

Unit

µA

I

Input Load Current

V

= V to V , V = V max

SS CC CC CC

LI

IN

I

Output Leakage Current

V

= V to V , V = V max

±1

µA

LO

OUT

SS

CC

CE# = V , OE# = V , WE# = V

IL

IH

IH,

10

8

20

16

mA

54 MHz

I

V

Active Burst Read Current

CCB

CC

CE# = V , OE# = V , WE# = V

IL

IH

IH,

40 MHz

V

= 1.8 V, OE# = V

= 3.0 V, OE# = V

0.2

12

10

16

5

µA

IO

IH

I

V

Non-active Output

IO

V

IH

5 MHz

1 MHz

mA

µA

Active Asynchronous Read

CE# = V , OE# = V ,

IL IH

WE# = V

CC

I

CC1

Current (Note 3)

IH

3.5

15

I

V

Active Write Current (Note 4) CE# = V , OE# = V , V = V

IH

40

10

CC2

CC3

CC4

CC

IL

IH

PP

Standby Current (Note 5)

Reset Current

CE# = RESET# = V ± 0.2 V

0.2

CC

RESET# = V CLK = V

µA

IL,

IL

Active Current

I

CE# = V , OE# = V

IH

25

60

mA

CC5

IL

(Read While Write)

V

= 1.8 V

= 3.0 V

= 1.8 V

= 3.0 V

–0.5

0.2

0.4

V

IO

OL

V

Input Low Voltage

IL

V

– 0.2

V

+ 0.2

IO

V

Input High Voltage

Output Low Voltage

IH

– 0.4

+ 0.4

0.1

I

= 100 µA, V = V

,

CC

CC min

V

OL

V

= V

IO

IO min

I

= –100 µA, V = V

,

OH

CC

CC min

V

Output High Voltage

V

IO

– 0.1

OH

V

= V

IO

IO min

V

Voltage for Accelerated Program

11.5

1.0

12.5

1.4

V

ID

V

Low V Lock-out Voltage

CC

LKO

Notes:

1. Maximum I_CCspecifications are tested with V_CC= V_CCmax.

2. All I_CCspecifications are tested with V_IO= V_CC.

3. The I_CCcurrent listed is typically less than 2 mA/MHz, with OE# at V_IH

4. I_CCactive while Embedded Erase or Embedded Program is in progress.

5. Device enters automatic sleep mode when addresses are stable for t_ACC+ 60 ns. Typical sleep mode current is equal

to I_CC3

.

May 9, 2006 25903C2

Am29BDS640G

45

D a t a S h e e t

Test Conditions

Table 16. Test Specifications

Test Condition

All Speed Options Unit

Output Load Capacitance, C

(including jig capacitance)

L

30

pF

Device

Under

Test

Input Rise and Fall Times

Input Pulse Levels

5

ns

V

0.0–V

IO

C

L

Input timing measurement

reference levels

V

/2

V

IO

Output timing measurement

reference levels

V

/2

IO

Note: Diodes are IN3064 or equivalent

Figure 8. Test Setup

Key to Switching Waveforms

WAVEFORM

INPUTS

OUTPUTS

Steady

Changing from H to L

Changing from L to H

Don’t Care, Any Change Permitted

Does Not Apply

Changing, State Unknown

Center Line is High Impedance State (High Z)

Switching Waveforms

V_IO

0.0 V

All Inputs and Outputs

V_IO/2

Input

Measurement Level

Output

Figure 9. Input Waveforms and Measurement Levels

46

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

AC Characteristics

V_CCand V_IOPower-up

Parameter

Description

Test Setup

Min

Speed

50

Unit

µs

t

V

Setup Time

IO

VCS

CC

t

V

Min

50

µs

VIOS

RSTH

t

RESET# Low Hold Time

Min

50

µs

t_VCS

V_CC

t_VIOS

V_IO

t_RSTH

RESET#

Figure 10.

V

and V Power-up Diagram

CC IO

May 9, 2006 25903C2

Am29BDS640G

47

D a t a S h e e t

AC Characteristics

Synchronous/Burst Read

Parameter

98

78

93

73

JEDEC Standard Description

(40 MHz) (54 MHz) (40 MHz) (54 MHz) Unit

Latency (Even Address in Handshake

Mode)

t

Max

95

87.5

95

88

ns

IACC

Parameter

JEDEC Standard Description

Latency—(Non-Handshake or Odd

98, 99

78, 79

93, 94

73, 74

(40 MHz) (54 MHz) (40 MHz) (54 MHz) Unit

t

120

20

106

120

20

106.5

14

ns

IACC

Address in Handshake mode)

Burst Access Time Valid Clock to

Output Delay

t

Max

Min

13.5

ns

BACC

t

Address Setup Time to CLK (See Note)

5

7

4

ACS

ACH

BDH

Address Hold Time from CLK (See

Note)

t

Data Hold Time from Next Clock Cycle

Output Enable to Output Valid

Chip Enable to High Z

Max

Min

ns

t

20

13.5

20

14

OE

t

10

10.5

CEZ

OEZ

t

Output Enable to High Z

t

CE# Setup Time to CLK

5

CES

t

RDY Setup Time to CLK

Min

5

4.5

20

4.5

14

RDYS

RACC

Ready Access Time from CLK

Max

Address Setup Time to AVD# (See

Note)

t

Min

ns

AAS

t

Address Hold Time to AVD# (See Note)

CE# Setup Time to AVD#

AVD# Low to CLK

Min

Max

7

0

ns

AAH

t

CAS

AVC

AVD

5

t

AVD# Pulse

12

70

t

Access Time

ACC

Note: Addresses are latched on the first of either the active edge of CLK or the rising edge of AVD#.

48

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

AC Characteristics

7 cycles for initial access shown.

t_CEZ

t_CES

CE#

1

2

3

4

5

6

7

CLK

t_AVC

AVD#

t_AVD

t_ACS

t_BDH

A21-A0

Aa

t_BACC

t_ACH

Hi-Z

DQ15-DQ0

t_IACC

t_ACC

Da

Da + 1

Da + n

t_OEZ

OE#

RDY

t_RACC

t_OE

Hi-Z

t_RDYS

Notes:

1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed

from two cycles to seven cycles.

2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.

3. The device is in synchronous mode.

Figure 11. CLK Synchronous Burst Mode Read

(rising active CLK)

May 9, 2006 25903C2

Am29BDS640G

49

D a t a S h e e t

AC Characteristics

4 cycles for initial access shown.

t_CEZ

t_CES

CE#

1

2

3

4

5

CLK

t_AVC

AVD#

t_AVD

t_ACS

t_BDH

Aa

A21-A0

t_BACC

t_ACH

Hi-Z

DQ15-DQ0

OE#

t_IACC

Da

Da + 1

Da + n

t_ACC

t_OEZ

t_RACC

t_OE

Hi-Z

RDY

t_RDYS

Notes:

1. Figure shows total number of wait states set to four cycles. The total number of wait states can be programmed from

two cycles to seven cycles. Clock is set for active falling edge.

2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.

3. The device is in synchronous mode.

4. In the Burst Mode Configuration Register, A17 = 0.

Figure 12. CLK Synchronous Burst Mode Read

(Falling Active Clock)

50

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

AC Characteristics

7 cycles for initial access shown.

t_CEZ

t_CAS

CE#

CLK

1

2

3

4

5

6

7

t_AVC

AVD#

t_AVD

t_AAS

t_BDH

A21-A0

Aa

t_BACC

t_AAH

Hi-Z

DQ15-DQ0

t_IACC

Da

Da + 1

Da + n

t_OEZ

t_ACC

OE#

RDY

t_RACC

t_OE

Hi-Z

t_RDYS

Notes:

1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed

from two cycles to seven cycles. Clock is set for active rising edge.

2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.

3. The device is in synchronous mode.

4. In the Burst Mode Configuration Register, A17 = 1.

Figure 13. Synchronous Burst Mode Read

7

cycles for initial access shown.

18.5 ns typ. (54 MHz)

t_CES

CE#

CLK

1

2

3

4

5

6

7

t_AVDS

AVD#

t_AVD

t_ACS

t_BDH

Aa

A21-A0

t_BACC

t_ACH

DQ15

-

DQ0

t_IACC

t_ACC

D6

D7

D0

D1

D5

D6

OE#

RDY

t_RACC

t_OE

Hi-Z

t_RDYS

Note: Figure assumes 7 wait states for initial access, 54 MHz clock, and automatic detect synchronous read. D0–D7 in

data waveform indicate the order of data within a given 8-word address range, from lowest to highest. Data will wrap

around within the 8 words non-stop unless the RESET# is asserted low, or AVD# latches in another address. Starting

address in figure is the 7th address in range (A6). See “Requirements for Synchronous (Burst) Read Operation”. The

Set Configuration Register command sequence has been written with A18=1; device will output RDY with valid data.

Figure 14. 8-word Linear Burst with Wrap Around

May 9, 2006 25903C2

Am29BDS640G

51

D a t a S h e e t

AC Characteristics

6

wait cycles for initial access shown.

t_CEZ

t_CES

25 ns typ. (40 MHz)

CE#

1

2

3

4

5

6

CLK

t_AVDS

AVD#

t_AVD

t_ACS

t_BDH

Aa

A21-A0

t_BACC

t_ACH

Hi-Z

DQ15

-

DQ0

t_IACC

D0

D1

D2

D3

Da + n

t_ACC

t_OEZ

t_RACC

OE#

RDY

t_OE

Hi-Z

t_RDYS

Note: Figure assumes 6 wait states for initial access, 40 MHz clock, and synchronous read. The Set Configuration Reg-

ister command sequence has been written with A18=0; device will output RDY one cycle before valid data.

Figure 15. Burst with RDY Set One Cycle Before Data

52

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

AC Characteristics

7 cycles for initial access shown.

t_CEZ

t_CAS

CE#

1

2

3

4

5

6

7

CLK

t_AVC

AVD#

t_AVD

t_AAS

t_BDH

A21-A0

Aa

t_BACC

t_AAH

Hi-Z

DQ15-DQ0

t_IACC

Da

Da + 1

Da + n

t_OEZ

t_ACC

OE#

RDY

t_RACC

t_OE

Hi-Z

t_RDYS

Notes:

1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed

from two cycles to seven cycles. Clock is set for active rising edge.

2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.

3. The device is in synchronous mode.

4. This waveform represents a synchronous burst mode, the device will also operate in reduced wait-state

handshaking under a CLK synchronous burst mode.

Figure 16. Reduced Wait-State Handshaking Burst

Mode Read Starting at an Even Address

May 9, 2006 25903C2

Am29BDS640G

53

D a t a S h e e t

AC Characteristics

7 cycles for initial access shown.

t_CEZ

t_CAS

CE#

1

2

3

4

5

6

7

8

CLK

t_AVC

AVD#

t_AVD

t_AAS

t_BDH

Aa

A21-A0

t_BACC

t_AAH

Hi-Z

DQ15-DQ0

Da

Da + 1

Da + n

t_IACC

t_ACC

t_OEZ

OE#

RDY

t_RACC

t_OE

Hi-Z

t_RDYS

Figure 17. Reduced Wait-State Handshaking Burst Mode Read

Starting at an Odd Address

Notes:

1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed

from two cycles to seven cycles. Clock is set for active rising edge.

2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.

3. The device is in synchronous mode.

4. This waveform represents a synchronous burst mode, the device will also operate in reduced wait-state

handshaking under a CLK synchronous burst mode.

54

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

AC Characteristics

Asynchronous Read

Parameter

D3, D4

D8, D9

C3, C4

C8, C9

JEDEC Standard Description

Unit

ns

t

Access Time from CE# Low

Max

Min

Max

Min

70

90

CE

t

Asynchronous Access Time (Note 1)

AVD# Low Time

ns

ACC

t

12

5

ns

AVDP

t

Address Setup Time to Rising Edge of AVD

Address Hold Time from Rising Edge of AVD

Output Enable to Output Valid

ns

AAVDS

AAVDH

t

7

ns

t

13.5

10

20

ns

OE

Read

0

ns

Output Enable Hold

Time

t

OEH

Toggle and

Data# Polling

Min

10

ns

t

Output Enable to High Z (Note 2)

CE# Setup Time to AVD#

Max

Min

10.5

ns

OEZ

CAS

t

0

Notes:

1. Asynchronous Access Time is from the last of either stable addresses or the falling edge of AVD#.

2. Not 100% tested.

CE#

t_OE

OE#

t_OEH

WE#

t_CE

t_OEZ

DQ15-DQ0

Valid RD

t_ACC

RA

A21-A0

AVD#

t_AAVDH

t_CAS

t_AVDP

t_AAVDS

Note: RA = Read Address, RD = Read Data.

Figure 18. Asynchronous Mode Read with Latched Addresses

May 9, 2006 25903C2

Am29BDS640G

55

D a t a S h e e t

AC Characteristics

CE#

OE#

t_OE

t_OEH

WE#

t_CE

t_OEZ

DQ15-DQ0

Valid RD

t_ACC

RA

A21-A0

AVD#

Note: RA = Read Address, RD = Read Data.

Figure 19. Asynchronous Mode Read

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Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

AC Characteristics

Hardware Reset (RESET#)

Parameter

All Speed

Options

JEDEC

Std

Description

Unit

RESET# Pin Low (During Embedded Algorithms)

to Read Mode (See Note)

t

Max

35

μs

Readyw

RESET# Pin Low (NOT During Embedded Algorithms)

to Read Mode (See Note)

t

500

ns

Ready

t

RESET# Pulse Width

Min

500

200

20

ns

RP

t

Reset High Time Before Read (See Note)

RESET# Low to Standby Mode

RH

t

μs

RPD

Note: Not 100% tested.

CE#, OE#

t_RH

RESET#

t_RP

t_Readyw

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

CE#, OE#

RESET#

t_Ready

t_RP

Figure 20. Reset Timings

May 9, 2006 25903C2

Am29BDS640G

57

D a t a S h e e t

AC Characteristics

Erase/Program Operations

Parameter

All

Speed

Options

JEDEC

Standard

Description

Unit

t

Write Cycle Time (Note 1)

Min

80

5

ns

AVAV

WC

Synchronous

Asynchronous

Address Setup Time

(Note 2)

t

ns

AVWL

AS

0

Synchronous

Asynchronous

7

Address Hold Time

(Note 2)

t

Min

WLAX

AH

45

5

t

Address Setup Time to CLK (Note 2)

Address Hold Time to CLK (Note 2)

Data Setup Time

Min

Typ

ns

µs

ACS

t

7

ACH

t

45

0

DVWH

WHDX

DS

t

Data Hold Time

DH

t

Read Recovery Time Before Write

CE# Setup Time to AVD#

0

GHWL

t

0

CAS

t

CE# Hold Time

0

WHEH

WLWH

WHWL

CH

WP

t

Write Pulse Width

50

30

0

t

Write Pulse Width High

WPH

t

Latency Between Read and Write Operations

Programming Operation (Note 3)

Accelerated Programming Operation (Note 3)

Sector Erase Operation (Notes 3, 4)

Chip Erase Operation (Notes 3, 4)

SR/W

t

8

WHWH1

2.5

0.2

26.8

500

1

WHWH1

t

Typ

sec

WHWH2

t

V

Rise and Fall Time

Min

Max

Min

ns

µs

ns

VID

ACC

t

Setup Time (During Accelerated Programming)

VIDS

t

Setup Time

CC

50

5

VCS

t

Clock Setup Time to WE# (Asynchronous)

Clock Setup Time to WE# (Synchronous)

Clock Hold Time from WE#

CE# Setup Time to WE#

CSW1

CSW2

1

t

1

CHW

t

0

ELWL

CS

t

AVD# Setup Time to WE#

AVD# Hold Time to WE#

5

AVSW

AVHW

t

5

t

AVD# Hold Time to CLK

5

AVHC

t

AVD# Low Time

12

AVDP

Notes:

1. Not 100% tested.

2. In asynchronous timing, addresses are latched on the falling edge of WE#. In synchronous mode, addresses are latched on the

first of either the rising edge of AVD# or the active edge of CLK.

3. See the “Erase and Programming Performance” section for more information.

4. Does not include the preprogramming time.

58

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

AC Characteristics

Program Command Sequence (last two cycles)

Read Status Data

t_CSW1

V

IH

CLK

V

IL

t_AVSW

t_AVHW

AVD

t_AVDP

t_AS

t_AH

Addresses

Data

555h

PA

VA

In

A0h

t_DS

Complete

PD

Progress

t_DH

CE#

t_CH

OE#

WE#

t_WP

t_WHWH1

t_CS

t_WPH

t_WC

t_VCS

V_CC

Notes:

1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.

2. “In progress” and “complete” refer to status of program operation.

3. A21–A12 are don’t care during command sequence unlock cycles.

4. The Asynchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode

Configuration Register.

Figure 21. Asynchronous Program Operation Timings

May 9, 2006 25903C2

Am29BDS640G

59

D a t a S h e e t

AC Characteristics

Program Command Sequence (last two cycles)

t_CHW

Read Status Data

V

IH

CLK

V

IL

t_AVSW

t_AVHW

AVD

t_AVDP

t_AS

t_AH

Addresses

Data

555h

PA

VA

In

A0h

Complete

PD

Progress

t_DS

t_DH

CE#

t_CH

OE#

WE#

t_WP

t_WHWH1

t_CS

t_WPH

t_WC

t_VCS

V_CC

Notes:

1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.

2. “In progress” and “complete” refer to status of program operation.

3. A21–A12 are don’t care during command sequence unlock cycles.

4. The Asynchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode

Configuration Register.

Figure 22. Alternate Asynchronous Program Operation Timings

60

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

AC Characteristics

Program Command Sequence (last two cycles)

Read Status Data

CLK

t_ACS

t_AS

AVD

t_AH

t_AVDP

Addresses

555h

PA

VA

In

Data

Complete

A0h

PD

t_DS

t_DH

Progress

t_CAS

CE#

t_CH

OE#

WE#

t_AVSW

t_WP

t_WHWH1

t_WPH

t_WC

t_CSW2

t_VCS

V_CC

Notes:

1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.

2. “In progress” and “complete” refer to status of program operation.

3. A21–A12 are don’t care during command sequence unlock cycles.

4. Addresses are latched on the first of either the rising edge of AVD# or the active edge of CLK.

5. Either CS# or AVD# is required to go from low to high in between programming command sequences.

6. The Synchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode

Configuration Register.

7. CLK must not have an active edge while WE# is at V_IL

.

8. AVD# must toggle during command sequence unlock cycles.

Figure 23. Synchronous Program Operation Timings

May 9, 2006 25903C2

Am29BDS640G

61

D a t a S h e e t

AC Characteristics

Program Command Sequence (last two cycles)

t_AVHC

Read Status Data

CLK

t_ACS

t_AS

AVD

t_AH

(Note 8)

t_AVDP

Addresses

555h

PA

VA

In

Data

Complete

A0h

PD

t_DS

t_DH

Progress

t_CAS

CE#

t_CH

OE#

WE#

t_CSW2

t_WP

t_WHWH1

t_WPH

t_WC

t_VCS

V_CC

Notes:

1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.

2. “In progress” and “complete” refer to status of program operation.

3. A21–A12 are don’t care during command sequence unlock cycles.

4. Addresses are latched on the first of either the rising edge of AVD# or the active edge of CLK.

5. Either CS# or AVD# is required to go from low to high in between programming command sequences.

6. The Synchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode

Configuration Register.

7. AVD# must toggle during command sequence unlock cycles.

8. t_AH= 45 ns.

9. CLK must not have an active edge while WE# is at V_IL

.

Figure 24. Alternate Synchronous Program Operation Timings

62

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

AC Characteristics

Erase Command Sequence (last two cycles)

Read Status Data

V

IH

CLK

V

IL

t_AVDP

AVD#

t_AH

t_AS

SA

VA

Addresses

Data

2AAh

555h for

chip erase

10h for

chip erase

In

Complete

55h

30h

Progress

t_DS

t_DH

CE#

t_CH

OE#

WE#

t_WP

t_WHWH2

t_CS

t_WPH

t_WC

t_VCS

V_CC

Figure 25. Chip/Sector Erase Command Sequence

Notes:

1. SA is the sector address for Sector Erase.

2. Address bits A21–A12 are don’t cares during unlock cycles in the command sequence.

May 9, 2006 25903C2

Am29BDS640G

63

D a t a S h e e t

AC Characteristics

CE#

AVD#

WE#

Addresses

Data

PA

Don't Care

A0h

Don't Care

PD

Don't Care

OE#

t_VIDS

1 ms

V

ID

ACC

t_VID

V

or V

IH

IL

Note: Use setup and hold times from conventional program operation.

Figure 26. Accelerated Unlock Bypass Programming Timing

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Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

AC Characteristics

AVD#

t_CEZ

t_CE

CE#

t_OEZ

t_CH

t_OE

OE#

t_OEH

WE#

t_ACC

VA

Addresses

VA

Data

Status Data

Notes:

1. Status reads in figure are shown as asynchronous.

2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is

complete, and Data# Polling will output true data.

3. AVD# must toggle between data reads.

Figure 27. Data# Polling Timings (During Embedded Algorithm)

AVD#

t_CEZ

t_CE

CE#

t_OEZ

t_CH

t_OE

OE#

WE#

t_OEH

t_ACC

Addresses

Data

VA

Status Data

Notes:

1. Status reads in figure are shown as asynchronous.

2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is

complete, the toggle bits will stop toggling.

3. AVD# must toggle between data reads.

Figure 28. Toggle Bit Timings (During Embedded Algorithm)

May 9, 2006 25903C2

Am29BDS640G

65

D a t a S h e e t

AC Characteristics

CE#

CLK

AVD#

Addresses

OE#

VA

t_IACC

Data

Status Data

RDY

Notes:

1. The timings are similar to synchronous read timings.

2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is

complete, the toggle bits will stop toggling.

3. RDY is active with data (A18 = 0 in the Burst Mode Configuration Register). When A18 = 1 in the Burst Mode

Configuration Register, RDY is active one clock cycle before data.

4. AVD# must toggle between data reads.

Figure 29. Synchronous Data Polling Timings/

Toggle Bit Timings

66

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

AC Characteristics

Address boundary occurs every 64 words, beginning at address

00003Fh (00007Fh, 0000BFh, etc.). Address 000000h is also a boundary crossing.

C60

C61

3D

C62

3E

C63

3F

C63

3F

C63

3F

C64

40

C65

41

C66

42

C67

43

CLK

3C

Address (hex)

(stays high)

AVD#

RDY

t_RACC

(Note 1)

(Note 2)

latency

t_RACC

RDY

latency

Data

D60

D61

D62

D63

D64

D65

D66

D67

OE#,

CE#

(stays low)

Notes:

1. RDY active with data (A18 = 1 in the Burst Mode Configuration Register).

2. RDY active one clock cycle before data (A18 = 0 in the Burst Mode Configuration Register).

3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device not

crossing a bank in the process of performing an erase or program.

Figure 30. Latency with Boundary Crossing

May 9, 2006 25903C2

Am29BDS640G

67

D a t a S h e e t

AC Characteristics

Address boundary occurs every 64 words, beginning at address

00003Fh (00007Fh, 0000BFh, etc.). Address 000000h is also a boundary crossing

C60

C61

3D

C62

3E

C63

3F

C63

3F

C63

3F

C64

40

CLK

3C

Address (hex)

(stays high)

AVD#

RDY

t_RACC

(Note 1)

(Note 2)

latency

t_RACC

RDY

latency

Data

Invalid

D60

D61

D62

D63

Read Status

OE#,

CE#

(stays low)

Notes:

1. RDY active with data (A18 = 1 in the Burst Mode Configuration Register).

2. RDY active one clock cycle before data (A18 = 0 in the Burst Mode Configuration Register).

3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device

crossing a bank in the process of performing an erase or program.

Figure 31. Latency with Boundary Crossing

into Program/Erase Bank

68

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

AC Characteristics

Data

D0

D1

Rising edge of next clock cycle

following last wait state triggers

next burst data

AVD#

OE#

total number of clock cycles

following AVD# falling edge

1

2

0

3

1

4

5

6

4

7

5

CLK

2

3

number of clock cycles

programmed

Note:

A14, A13, A12 = “101” ⇒ 5 programmed, 7 total

A14, A13, A12 = “100” ⇒ 4 programmed, 6 total

A14, A13, A12 = “011” ⇒ 3 programmed, 5 total

A14, A13, A12 = “010” ⇒ 2 programmed, 4 total

A14, A13, A12 = “001” ⇒ 1 programmed, 3 total

A14, A13, A12 = “000” ⇒ 0 programmed, 2 total

Figure assumes address D0 is not at an address boundary, active clock edge is rising, and wait state is set to “101”.

Figure 32. Example of Wait States Insertion (Standard Handshaking Device)

May 9, 2006 25903C2

Am29BDS640G

69

D a t a S h e e t

AC Characteristics

Last Cycle in

Program or

Sector Erase

Read status (at least two cycles) in same bank

and/or array data from other bank

Begin another

write or program

command sequence

Command Sequence

t_WC

t_RC

t_WC

CE#

OE#

t_OE

t_GHWL

t_OEH

WE#

Data

t_WPH

t_OEZ

t_WP

t_DS

t_ACC

t_OEH

t_DH

PD/30h

RD

AAh

t_SR/W

RA

Addresses

AVD#

PA/SA

t_AS

RA

555h

t_AH

Note: Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while

checking the status of the program or erase operation in the “busy” bank. The system should read status twice to ensure

valid information.

Figure 33. Back-to-Back Read/Write Cycle Timings

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Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

Erase and Programming Performance

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

32 Kword

8 Kword

0.4

54

5

Sector Erase Time

s

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

s

µs

s

Excludes system level

overhead (Note 5)

Word Programming Time

11.5

4

210

120

144

48

Accelerated Word Programming Time

Chip Programming Time (Note 3)

Excludes system level

overhead (Note 5)

48

16

Accelerated Chip Programming Time

s

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 1.8 V V_CC, 1 million cycles. Additionally,

programming typicals assumes a checkerboard pattern.

2. Under worst case conditions of 90°C, V_CC= 1.65 V, 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed.

4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program

command. See Table 13 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 1 million cycles.

FBGA Ball Capacitance

Parameter

Symbol

Parameter Description

Input Capacitance

Test Setup

Typ

4.2

5.4

3.9

Max

5.0

6.5

4.7

Unit

pF

C

V

= 0

IN

C

Output Capacitance

Control Pin Capacitance

V

pF

OUT

C

V

pF

IN2

IN

Notes:

1. Sampled, not 100% tested.

2. Test conditions T_A= 25°C, f = 1.0 MHz.

3. Fortified BGA ball capacitance TBD.

Data Retention

Parameter

Test Conditions

Min

10

Unit

150

°

C

Years

Minimum Pattern Data Retention Time

125

°

20

May 9, 2006 25903C2

Am29BDS640G

71

D a t a S h e e t

Physical Dimensions

FBE080—80-ball Fine-Pitch Ball Grid Array (FBGA)

11 x 12 mm Package

0.20

(4X)

D1

A

D

eD

8

eE

7

6

SE

5

4

E1

E

3

2

1

M

L

K

J

H

G

F

E

D

C

B

A

A1 CORNER

7

B

A1 CORNER INDEX MARK

10

6

NXOb

SD

M

φ0.08

φ0.15 M

Z

TOP VIEW

Z A B

BOTTOM VIEW

0.25 Z

0.08 Z

A2

A

A1

Z

SEATING PLANE

SIDE VIEW

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE IN MILLIMETERS.

PACKAGE

JEDEC

FBE 080

N/A

10.95 mm x 11.95 mm

PACKAGE

NOTE

3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.

SYMBOL

MIN. NOM. MAX.

4.

e REPRESENTS THE SOLDER BALL GRID PITCH.

A

A1

A2

D

---

1.20

---

OVERALL THICKNESS

BALL HEIGHT

5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D"

DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE

IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER

BALLS.

0.20

0.84

---

0.94

BODY THICKNESS

BODY SIZE

11.95 BSC.

E

10.95 BSC.

8.80 BSC.

BODY SIZE

6

DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL

DIAMETER IN A PLANE PARALLEL TO DATUM Z.

D1

E1

MD

ME

BALL FOOTPRINT

5.60 BSC.

12

BALL FOOTPRINT

7

SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A

AND B AND DEFINE THE POSITION OF THE CENTER SOLDER

BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER

OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D

OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000.

ROW MATRIX SIZE D DIRECTION

8

ROW MATRIX SIZE E DIRECTION

TOTAL BALL COUNT

N

b

80

0.25

0.30

0.35

BALL DIAMETER

WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE

OUTER ROW, SD OR SE = e/2

e

0.80 BSC.

BALL PITCH

SD / SE

0.40 BSC.

A3-A6, B3-B6,

L3-L6, M3-M6

SOLDER BALL PLACEMENT

DEPOPULATED SOLDER BALLS

8. "+" IN THE PACKAGE DRAWING INDICATES THE THEORETICAL

CENTER OF DEPOPULATED BALLS.

E

PACKAGE OUTLINE TYPE

9

FOR PACKAGE THICKNESS, "A" IS THE CONTROLLING DIMENSION.

10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, INK MARK,

METALLIZED MARKINGS INDENTION OR OTHER MEANS.

3150\38.9G

Note: BSC is an ANSI standard for Basic Space Centering.

72

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

Revision Summary

Revision A (February 13, 2002)

Initial release.

Revision A+1 (February 19, 2002)

Automatic Sleep Mode

Clarified description to indicate that sleep mode is activated when the first CLK

edge occurs after t

.

ACC

Figure 20, Asynchronous Program Operation Timings

Modified to show that CLK is don’t care prior to AVD# going low, and that AVD#

must not be low before CE# transitions low.

Revision A+2 (February 27, 2002)

Figure 21, Asynchronous Program Operation Timings

Extended don’t care section of CLK to falling edge of WE#.

Revision A+3 (May 9, 2002)

Requirements for Synchronous (Burst) Read Operation

Shifted address, clock, and data cycle references in third paragraph up by one.

Table 4, System Interface String

Corrected data for address 23h.

Table 9, Initial Access Cycles vs. Frequency

Added table.

Autoselect Command Sequence

Added bottom boot device IDs to table.

Table 13, Command Definitions

Added bottom boot device IDs to table.

RDY: Ready

Corrected address boundary from 63rd word/3Eh to 64th word/3Fh.

DC Characteristics

Added V = V

to test conditions for V and V

in table.

IO

IO min

OL

OH

Erase/Program Operations table

Added specifications for parameters t

, t

.

CSW1 CSW2 CHW AHC

Figures 21, 23

Added note to indicate AVD# must toggle during command sequence unlock cy-

cles. Added t to 21.

CSW1

Figures 22, 24

Added figures, which show different timings between addresses, CLK, WE#, and

AVD#.

Figures 25, 27, 28

Added note to indicate AVD# must toggle during data reads.

Figures 30, 31

Shifted address, clock, and data cycle counts up by one.

May 9, 2006 25903C2

Am29BDS640G

73

D a t a S h e e t

Revision A + 4 (July 26, 2002)

Table 1, Device Bus Operations

Changed Synchronous Write to rising edge of CLK.

Writing Commands/Command Sequences

Added CLK as part of the asynchronous write operation system drive. Added V

CC

and V Power-up and Power-down Sequencing section.

IO

AC Characteristics

Changed t

erase/program time from Min to Max.

CHW

Figure 20, Asynchronous Program Operation Timings

Changed t reference to WE# from AVD#.

CSW1

Figure 21, Alternate Asynchronous Program Operation Timings

Changed to show CLK low after t time.

CHW

Figure 22, Synchronous Program Operation Timings

Removed t . Changed t to t and added t

.

CSW2

ACH

AHW

AVSW

Figure 23, Alternate Synchronous Program Operation Timings

Changed t to t . Removed t

.

ACH

AVCH

AVHC

DC Characteristics, CMOS Compatible

Corrected I OE# = V to = VI ; switched Typ. and Max. values.

CCB

IL

H

Revision B (October 31, 2002)

Global

Renamed Handshaking Enabled to Reduced Wait-State Handshaking. Renamed

non-Handshaking to Standard Handshaking

Product Selector Guide

Revised with renamed speed options and added Synchronous Access Time with

Reduced Wait-state Handshaking. Added Asynchronous Access Time.

Connection Diagram

Corrected pin numbers on bottom row.

Ordering Information

Revised with global changes. Revised Valid Combinations with updated ordering

information.

FBGA Capacitance

Added BGA Capacitance Table after Erase and Programming Performance.

Revision C (August 13, 2003)

Global

Updated formatting to new Spansion template. Changed data sheet status from

Advance Information to Preliminary.

Sector Lock/Unlock Command Sequence

Modified description of write cycles.

Reset Command

Modified last paragraph of section.

Table 13, Command Definitions

Added note references to Erase Suspend and Sector Lock/Unlock rows in table.

Replaced addresses “XXX” with “BA” in first and second cycles of Sector Lock/Un-

lock table row. Modified description of BA in legend.

74

Am29BDS640G

25903C2 May 9, 2006

D a t a S h e e t

Revision C + 1 (October 1, 2003)

DC Characteristics - CMOS Compatible

Added note #2. Modified column heading from Test Conditions (Note 1) to Test

Conditions (Note 1,2)

Revision C2 (May 9, 2006)

Added migration and obsolescence information.

Colophon

The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary

industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that

includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal

injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,

medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and

artificial satellite). Please note that Spansion LLC will not be liable to you and/or any third party for any claims or damages arising in connection with above-

mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such

failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels

and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on ex-

port under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the

prior authorization by the respective government entity will be required for export of those product.

Trademarks

Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are trademarks of Spansion LLC. Other names are for informational

purposes only and may be trademarks of their respective owners.

May 9, 2006 25903C2

Am29BDS640G

75


型号：	BS640GBD4V
厂家：	AMD
描述：	64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 64兆位（4M ×16位）， 1.8伏只同时读/写，突发模式闪存闪存
文件：	总77页 (文件大小：1113K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BS640GBD4V [AMD]

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