L200BT90VK [AMD]
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory; 2兆位( 256千×8位/ 128的K× 16位) CMOS 3.0伏只引导扇区闪存型号: | L200BT90VK |
厂家: | AMD |
描述: | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
文件: | 总46页 (文件大小:1318K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Am29LV200B
Data Sheet
The Am29LV200B is not offered for new designs. Please contact a Spansion representative for alter-
nates.
The following document contains information on Spansion memory products. Although the document
is marked with the name of the company that originally developed the specification, Spansion will
continue to offer these products to existing customers.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appro and
changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Spansion continues to support existing part numbers beginning with “Am” and “MBM”. To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 21521 Revision D Amendment 6 Issue Date October 10, 2006
THIS PAGE LEFT INTENTIONALLY BLANK.
DATA SHEET
Am29LV200B
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
The Am29LV200B is not offered for new designs. Please contact a Spansion representative for alternates.
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Embedded Algorithms
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
■ Manufactured on 0.32 µm process technology
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
— Compatible with 0.5 µm Am29LV200 device
■ High performance
■ Minimum 1 million erase cycle guarantee per
— Full voltage range: access times as fast as 70 ns
sector
— Regulated voltage range: access times as fast as
55 ns
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Package option
■ Ultra low power consumption (typical values at
5 MHz)
— 48-pin TSOP
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 44-pin SO
— 48-ball FBGA
■ Compatibility with JEDEC standards
— 15 mA program/erase current
— Pinout and software compatible with single-
power supply Flash
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Provides a software method of detecting program
or erase operation completion
— Supports full chip erase
— Sector Protection features:
■ Ready/Busy# pin (RY/BY#)
A hardware method of locking a sector to prevent
any program or erase operations within that sector
— Provides a hardware method of detecting
program or erase cycle completion
Sectors can be locked in-system or via
programming equipment
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Unlock Bypass Program Command
■ Hardware reset pin (RESET#)
— Reduces overall programming time when issuing
multiple program command sequences
— Hardware method to reset the device to reading
array data
■ Top or bottom boot block configurations
available
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21521 Rev: D Amendment: 6
Issue Date: October 10, 2006
D A T A S H E E T
GENERAL DESCRIPTION
The Am29LV200B is a 2 Mbit, 3.0 volt-only Flash
memory organized as 262,144 bytes or 131,072 words.
The device is offered in 44-pin SO, 48-pin TSOP, and 48-
ball FBGA packages. The word-wide data (x16) appears
on DQ15-DQ0; the byte-wide (x8) data appears on
DQ7-DQ0. This device is designed to be programmed
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
in-system using only a single 3.0 volt V
supply. No
CC
V
is required for write or erase operations. The device
PP
can also be programmed in standard EPROM
programmers.
This device is manufactured using AMD’s 0.32 µm
process technology, and offers all the features and ben-
efits of the Am29LV200, which was manufactured using
0.5 µm process technology. In addition, the
Am29LV200B features unlock bypass programming
and in-system sector protection/unprotection.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V
detector that automatically inhibits write opera-
CC
The standard device offers access times of 55, 70, 90
and 120 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus contention
the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of
memory. This can be achieved in-system or via pro-
gramming equipment.
The device requires only a single 3.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that automatically
2
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
TABLE OF CONTENTS
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Special Handling Instructions ................................................... 6
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .7
Table 1. Am29LV200B Device Bus Operations ................................ 9
Word/Byte Configuration .......................................................... 9
Requirements for Reading Array Data ..................................... 9
Writing Commands/Command Sequences .............................. 9
Program and Erase Operation Status .................................... 10
Standby Mode ........................................................................ 10
Automatic Sleep Mode ................................................................10
RESET#: Hardware Reset Pin ...................................................10
Output Disable Mode .............................................................. 11
Table 2. Am29LV200BT Top Boot Block Sector Address Table..... 11
Table 3. Am29LV200BB Bottom Boot Block Sector Address Table 11
Autoselect Mode ..................................................................... 11
Table 4. Am29LV200B Autoselect Codes (High Voltage Method).. 12
Sector Protection/Unprotection ............................................... 12
Temporary Sector Unprotect .................................................. 12
Figure 1. In-System Sector Protect/Unprotect Algorithms ...............13
Figure 2. Temporary Sector Unprotect Operation ...........................14
Hardware Data Protection ...................................................... 14
DQ2: Toggle Bit II ................................................................... 21
Reading Toggle Bits DQ6/DQ2 ............................................... 21
DQ5: Exceeded Timing Limits ................................................ 22
DQ3: Sector Erase Timer ....................................................... 22
Figure 6. Toggle Bit Algorithm ........................................................ 22
Table 6. Write Operation Status..................................................... 23
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 24
Extended (E) Devices ............................................................. 24
V
Supply Voltages .............................................................. 24
CC
Figure 9. ICC1 Current vs. Time (Showing Active and Automatic
Sleep Currents) .............................................................................. 26
Figure 10. Typical ICC1 vs. Frequency ........................................... 26
Figure 11. Test Setup ..................................................................... 27
Table 7. Test Specifications........................................................... 27
Key to Switching Waveforms. . . . . . . . . . . . . . . . 27
Figure 12. Input Waveforms and Measurement Levels ................. 27
Read Operations .................................................................... 28
Figure 13. Read Operations Timings ............................................. 28
Hardware Reset (RESET#) .................................................... 29
Figure 14. RESET# Timings .......................................................... 29
Word/Byte Configuration (BYTE#) ........................................ 30
Figure 15. BYTE# Timings for Read Operations ............................ 30
Figure 16. BYTE# Timings for Write Operations ............................ 30
Erase/Program Operations ..................................................... 31
Figure 17. Program Operation Timings .......................................... 32
Figure 18. Chip/Sector Erase Operation Timings .......................... 33
Figure 19. Data# Polling Timings (During Embedded Algorithms) . 34
Figure 20. Toggle Bit Timings (During Embedded Algorithms) ...... 34
Figure 21. DQ2 vs. DQ6 ................................................................. 35
Temporary Sector Unprotect .................................................. 35
Figure 22. Temporary Sector Unprotect Timing Diagram .............. 35
Figure 23. Sector Protect/Unprotect Timing Diagram .................... 36
Alternate CE# Controlled Erase/Program Operations ............ 37
Figure 24. Alternate CE# Controlled Write Operation Timings ...... 38
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 39
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 39
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
TS 048—48-Pin Standard TSOP ............................................ 40
SO 044—44-Pin Small Outline Package ................................ 41
FBA048—48-Ball Fine-Pitch Ball Grid Array, 0.80 mm pitch,
6 x 8 mm package .................................................................. 42
Low V Write Inhibit .............................................................. 14
CC
Write Pulse “Glitch” Protection ............................................... 14
Logical Inhibit .......................................................................... 14
Power-Up Write Inhibit ............................................................ 14
Reading Array Data ................................................................ 15
Reset Command ..................................................................... 15
Autoselect Command Sequence ............................................ 15
Word/Byte Program Command Sequence ............................. 15
Unlock Bypass Command Sequence ..................................... 16
Figure 3. Program Operation ..........................................................16
Chip Erase Command Sequence ........................................... 16
Sector Erase Command Sequence ........................................ 17
Erase Suspend/Erase Resume Commands ........................... 17
Figure 4. Erase Operation ...............................................................18
Command Definitions ............................................................. 19
Table 5. Am29LV200B Command Definitions................................. 19
DQ7: Data# Polling ................................................................. 20
Figure 5. Data# Polling Algorithm ...................................................20
RY/BY#: Ready/Busy# ........................................................... 21
DQ6: Toggle Bit I .................................................................... 21
October 10, 2006 21521D6
Am29LV200B
3
D A T A S H E E T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29LV200B
Regulated Voltage Range: VCC = 3.0–3.6 V
Full Voltage Range: VCC = 2.7–3.6 V
Max access time, ns (tACC
Max CE# access time, ns (tCE
Max OE# access time, ns (tOE
55R
Speed Options
70
90
90
90
35
120
120
120
50
)
55
55
30
70
70
30
)
)
Note: See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
DQ0–DQ15 (A-1)
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
Input/Output
Buffers
RESET#
State
Control
WE#
BYTE#
Command
Register
PGM Voltage
Generator
Data
Latch
Chip Enable
Output Enable
Logic
STB
CE#
OE#
Y-Decoder
Y-Gating
STB
VCC Detector
Timer
Cell Matrix
X-Decoder
A0–A16
4
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
1
2
3
4
5
6
7
8
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
NC
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Standard TSOP
NC
A7
A6
A5
A4
A3
A2
A1
October 10, 2006 21521D6
Am29LV200B
5
D A T A S H E E T
CONNECTION DIAGRAMS
NC
RY/BY#
NC
1
2
3
4
5
6
7
8
9
44 RESET#
43 WE#
42 A8
A7
41 A9
A6
40 A10
A5
39 A11
A4
38 A12
A3
37 A13
A2
36 A14
A1 10
A0 11
35 A15
34 A16
SO
CE# 12
VSS 13
33 BYTE#
32 VSS
OE# 14
DQ0 15
DQ8 16
DQ1 17
DQ9 18
DQ2 19
DQ10 20
DQ3 21
DQ11 22
31 DQ15/A-1
30 DQ7
29 DQ14
28 DQ6
27 DQ13
26 DQ5
25 DQ12
24 DQ4
23 VCC
48-ball FBGA
Top View, Balls Facing Down
A6
B6
C6
D6
E6
F6
G6
H6
A13
A12
A14
A15
A16
BYTE# DQ15/A-1 VSS
A5
A9
B5
A8
C5
D5
E5
F5
G5
H5
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
B4
C4
D4
E4
F4
G4
H4
WE# RESET#
NC
NC
DQ5
DQ12
VCC
DQ4
A3
B3
C3
D3
E3
F3
G3
H3
RY/BY#
NC
NC
NC
DQ2
DQ10
DQ11
DQ3
A2
A7
B2
C2
A6
D2
A5
E2
F2
G2
H2
NC
DQ0
DQ8
DQ9
DQ1
A1
A3
B1
A4
C1
A2
D1
A1
E1
A0
F1
G1
H1
CE#
OE#
VSS
promised if the package body is exposed to
temperatures above 150°C for prolonged periods of
time.
Special Handling Instructions
Special handling is required for Flash Memory products
in molded packages (TSOP, BGA, SSOP, PLCC,
PDIP). The package and/or data integrity may be com-
6
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
PIN CONFIGURATION
LOGIC SYMBOL
A0–A16
= 17 addresses
17
DQ0–DQ14 = 15 data inputs/outputs
A0–A16
16 or 8
DQ15/A-1
=
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
DQ0–DQ15
(A-1)
BYTE#
CE#
=
=
=
=
=
=
=
Selects 8-bit or 16-bit mode
Chip enable
CE#
OE#
OE#
Output enable
WE#
WE#
Write enable
RESET#
BYTE#
RESET#
RY/BY#
Hardware reset pin, active low
Ready/Busy# output
RY/BY#
V
3.0 volt-only single power supply
CC
(see Product Selector Guide for speed
options and voltage supply tolerances)
V
=
=
Device ground
SS
NC
Pin not connected internally
October 10, 2006 21521D6
Am29LV200B
7
D A T A S H E E T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combi-
nation) is formed by a combination of the elements below.
Am29LV200B
T
-55R
E
C
TEMPERATURE RANGE
C
D
I
=
=
=
=
=
=
Commercial (0°C to +70°C)
Commercial (0°C to +70°C) with Pb-free package
Industrial (–40°C to +85°C)
Industrial (–40°C to +85°C) with Pb-free package
Extended (–55°C to +125°C)
F
E
K
Extended (–55°C to +125°C) with Pb-free package
PACKAGE TYPE
E
=
=
=
48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048)
44-Pin Small Outline Package (SO 044)
S
WA
48-ball Fine-pitch Ball Grid Array (FBGA),
0.80 mm ball pitch, 6 x 8 mm package (FBA048)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
B
=
=
Top sector
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29LV200B
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations
Valid Combinations for FBGA Packages
AM29LV200BT-55R,
AM29LV200BB-55R
Order Number
Package Marking
EC, EI, SC, SI
ED, EF, SD, SF
WAC,
AM29LV200BT-70,
AM29LV200BB-70
AM29LV200BT55R,
AM29LV200BB55R
WAI, L200BT55R,
WAD, L200BB55R
WAF
C, I,
D, F
AM29LV200BT-90,
AM29LV200BB-90
AM29LV200BT70,
AM29LV200BB70
L200BT70V,
WAC,
EC, EI, EE, ED, EF, EK
SC, SI, SE, SD, SF, SK
L200BB70V
WAI,
AM29LV200BT-120,
AM29LV200BB-120
WAE,
AM29LV200BT90,
AM29LV200BB90
L200BT90V,
L200BB90V
C, I, E,
D, F, K
WAD,
WAF,
WAK
AM29LV200BT120,
AM29LV200BB120
L200BT12V,
L200BB12V
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
8
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is composed of latches that store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
the register serve as inputs to the internal state
machine. The state machine outputs dictate the func-
tion of the device. Table 1 lists the device bus
operations, the inputs and control levels they require,
and the resulting output. The following subsections
describe each of these operations in further detail.
Table 1. Am29LV200B Device Bus Operations
DQ8–DQ15
DQ0– BYTE# BYTE#
Addresses
(Note 1)
Operation
CE# OE# WE# RESET#
DQ7
DOUT
DIN
= VIH
DOUT
DIN
= VIL
Read
Write
L
L
L
H
L
H
H
AIN
AIN
DQ8–DQ14=High-Z,
DQ15 = A-1
H
VCC
0.3 V
VCC
0.3 V
Standby
X
X
X
High-Z High-Z
High-Z
Output Disable
Reset
L
H
X
H
X
H
L
X
X
High-Z High-Z
High-Z High-Z
High-Z
High-Z
X
Sector Address, A6 = L,
A1 = H, A0 = L
Sector Protect (Note 2)
L
L
X
H
H
X
L
L
X
VID
VID
VID
DIN
DIN
DIN
X
X
X
X
Sector Address, A6 = H,
A1 = H, A0 = L
Sector Unprotect (Note 2)
Temporary Sector
Unprotect
AIN
DIN
High-Z
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Addresses In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A16:A0 in word mode (BYTE# = VIH), A16:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Protection/Unprotection” section.
The internal state machine is set for reading array data
Word/Byte Configuration
upon device power-up, or after a hardware reset. This
The BYTE# pin controls whether the device data I/O
ensures that no spurious alteration of the memory
pins DQ15–DQ0 operate in the byte or word configura-
content occurs during the power transition. No
tion. If the BYTE# pin is set at logic ‘1’, the device is in
command is necessary in this mode to obtain array
word configuration, DQ15–DQ0 are active and con-
data. Standard microprocessor read cycles that assert
trolled by CE# and OE#.
valid addresses on the device address inputs produce
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
valid data on the device data outputs. The device
remains enabled for read access until the command
register contents are altered.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica-
tions and to Figure 13 for the timing diagram. I
DC Characteristics table represents the active current
specification for reading array data.
in the
CC1
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to V . CE# is the power
IL
control and selects the device. OE# is the output
control and gates array data to the output pins. WE#
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
should remain at V . The BYTE# pin determines
IH
whether the device outputs array data in words or
bytes.
October 10, 2006 21521D6
Am29LV200B
9
D A T A S H E E T
sectors of memory), the system must drive WE# and The device enters the CMOS standby mode when the
CE# to V , and OE# to V .
CE# and RESET# pins are both held at V ± 0.3 V.
IL
IH
CC
(Note that this is a more restricted voltage range than
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” for more
information.
V .) If CE# and RESET# are held at V , but not within
IH
IH
V
± 0.3 V, the device will be in the standby mode, but
CC
the standby current will be greater. The device requires
standard access time (t ) for read access when the
CE
The device features an Unlock Bypass mode to facili-
tate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are
required to program a word or byte, instead of four. The
“Word/Byte Program Command Sequence” section
has details on programming data to the device using
both standard and Unlock Bypass command
sequences.
device is in either of these standby modes, before it is
ready to read data.
If the device is deselected during erasure or program-
ming, the device draws active current until the operation
is completed.
I
in the DC Characteristics table represents the
CC3
standby current specification.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Tables 2 and 3 indicate the
address space that each sector occupies. A “sector
address” consists of the address bits required to
uniquely select a sector. The “Am29LV200B Command
Definitions” section has details on erasing a sector or
the entire chip, or suspending/resuming the erase
operation.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically enables
this mode when addresses remain stable for t
+ 30
ACC
ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address
access timings provide new data when addresses are
changed. While in sleep mode, output data is latched
After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the
internal register (which is separate from the memory
array) on DQ7–DQ0. Standard read cycle timings apply
in this mode. Refer to the Autoselect Mode and Autose-
lect Command Sequence sections for more
information.
and always available to the system. I
acteristics table represents the automatic sleep mode
current specification.
in the DC Char-
CC4
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of reset-
ting the device to reading array data. When the RESET#
pin is driven low for at least a period of t , the device
RP
I
in the DC Characteristics table represents the
immediately terminates any operation in progress,
tristates all output pins, and ignores all read/write com-
mands for the duration of the RESET# pulse. The device
also resets the internal state machine to reading array
data. The operation that was interrupted should be rein-
itiated once the device is ready to accept another
command sequence, to ensure data integrity.
CC2
active current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
Current is reduced for the duration of the RESET# pulse.
bits on DQ7–DQ0. Standard read cycle timings and I
CC
When RESET# is held at V
0.3 V, the device draws
SS
read specifications apply. Refer to “Write Operation
Status” for more information, and to “AC Characteris-
tics” for timing diagrams.
CMOS standby current (I
). If RESET# is held at V
CC4
IL
but not within V
greater.
0.3 V, the standby current will be
SS
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, inde-
pendent of the OE# input.
10
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
rithms). The system can read data t after the RESET#
If RESET# is asserted during a program or erase oper-
ation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
RH
pin returns to V .
IH
Refer to the AC Characteristics tables for RESET#
parameters and to Figure 14 for the timing diagram.
time of t
(during Embedded Algorithms). The
READY
system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
Output Disable Mode
When the OE# input is at V , output from the device is
disabled. The output pins are placed in the high imped-
ance state.
IH
within a time of t
(not during Embedded Algo-
READY
Table 2. Am29LV200BT Top Boot Block Sector Address Table
Address Range (in hexadecimal)
Sector Size
(Kbytes/
(x8)
(x16)
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
A16
0
A15
A14
X
A13
X
A12
X
Kwords)
Address Range
Address Range
0
1
0
1
1
1
1
64/32
64/32
64/32
32/16
8/4
00000h–0FFFFh
10000h–1FFFFh
20000h–2FFFFh
30000h–37FFFh
38000h–39FFFh
3A000h–3BFFFh
3C000h–3FFFFh
00000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1BFFFh
1C000h–1CFFFh
1D000h–1DFFFh
1E000h–1FFFFh
0
X
X
X
1
X
X
X
1
0
X
X
1
1
0
0
1
1
0
1
8/4
1
1
1
X
16/8
Table 3. Am29LV200BB Bottom Boot Block Sector Address Table
Address Range (in hexadecimal)
Sector Size
(Kbytes/
(x8)
(x16)
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
A16
0
A15
0
A14
0
A13
0
A12
X
Kwords)
Address Range
Address Range
16/8
8/4
00000h–03FFFh
04000h–05FFFh
06000h–07FFFh
08000h–0FFFFh
10000h–1FFFFh
20000h–2FFFFh
30000h–3FFFFh
00000h–01FFFh
02000h–02FFFh
03000h–03FFFh
04000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
0
0
0
1
0
0
0
0
1
1
8/4
0
0
1
X
X
32/16
64/32
64/32
64/32
0
1
X
X
X
1
0
X
X
X
1
1
X
X
X
Note for Tables 2 and 3: Address range is A16:A-1 in byte mode and A16:A0 in word mode. See “Word/Byte Configuration”
section.
Table 4. In addition, when verifying sector protection,
Autoselect Mode
the sector address must appear on the appropriate
The autoselect mode provides manufacturer and
highest order address bits (see Tables 2 and 3). Table
device identification, and sector protection verification,
4 shows the remaining address bits that are don’t care.
through identifier codes output on DQ7–DQ0. This
When all necessary bits have been set as required, the
mode is primarily intended for programming equipment
programming equipment may then read the corre-
to automatically match a device to be programmed with
sponding identifier code on DQ7–DQ0.
its corresponding programming algorithm. However,
the autoselect codes can also be accessed in-system
through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 5. This method
When using programming equipment, the autoselect
does not require V . See “Am29LV200B Command
ID
mode requires V (11.5 V to 12.5 V) on address pin
ID
Definitions” for details on using the autoselect mode.
A9. Address pins A6, A1, and A0 must be as shown in
October 10, 2006 21521D6
Am29LV200B
11
D A T A S H E E T
Table 4. Am29LV200B Autoselect Codes (High Voltage Method)
A16 A11
to to
Mode CE# OE# WE# A12 A10 A9
A8
to
A7
A5
to
A2
DQ8
to
A0 DQ15
DQ7
to
DQ0
Description
A6
A1
Manufacturer ID: AMD
L
L
L
L
H
H
X
X
VID
X
X
L
X
X
L
L
X
01h
3Bh
Device ID:
Am29LV200B
(Top Boot Block)
Word
Byte
Word
Byte
22h
X
X
VID
L
L
L
L
H
L
L
L
L
L
L
H
H
H
X
22h
X
3Bh
BFh
BFh
Device ID:
Am29LV200B
(Bottom Boot Block)
X
X
X
VID
X
X
X
X
H
L
01h
(protected)
X
X
Sector Protection Verification
L
L
H
SA
VID
L
H
00h
(unprotected)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
lication number 21226 contains further details; contact
an AMD representative to request a copy.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The hard-
ware sector unprotection feature re-enables both
program and erase operations in previously protected
sectors. Sector protection/unprotection can be imple-
mented via two methods.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
The primary method requires V on the RESET# pin
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
ID
only, and can be implemented either in-system or via
programming equipment. Figure 1 shows the algo-
rithms and Figure 23 shows the timing diagram. This
method uses standard microprocessor bus cycle
timing. For sector unprotect, all unprotected sectors
must first be protected prior to the first sector unprotect
write cycle.
Temporary Sector Unprotect
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the
RESET# pin to V . During this mode, formerly pro-
ID
tected sectors can be programmed or erased by
The alternate method intended only for programming
selecting the sector addresses. Once V is removed
equipment requires V on address pin A9 and OE#.
ID
ID
from the RESET# pin, all the previously protected
sectors are protected again. Figure 2 shows the algo-
rithm, and Figure 22 shows the timing diagrams, for this
feature.
This method is compatible with programmer routines
written for earlier 3.0 volt-only AMD flash devices. Pub-
12
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
START
START
Protect all sectors:
PLSCNT = 1
PLSCNT = 1
RESET# = VID
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
RESET# = VID
Wait 1 μs
Wait 1 μs
unprotect address
No
First Write
Cycle = 60h?
No
First Write
Cycle = 60h?
Temporary Sector
Unprotect Mode
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Wait 150 µs
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
Reset
PLSCNT = 1
Increment
PLSCNT
Wait 15 ms
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Read from
sector address
with A6 = 1,
Data = 01h?
Yes
A1 = 1, A0 = 0
No
Yes
Set up
next sector
address
Yes
No
PLSCNT
= 1000?
Protect another
sector?
Data = 00h?
Yes
Device failed
No
Yes
Remove VID
from RESET#
No
Last sector
verified?
Device failed
Write reset
command
Yes
Remove VID
Sector Unprotect
Algorithm
from RESET#
Sector Protect
Algorithm
Sector Protect
complete
Write reset
command
Sector Unprotect
complete
Figure 1. In-System Sector Protect/Unprotect Algorithms
Am29LV200B
October 10, 2006 21521D6
13
D A T A S H E E T
against inadvertent writes (refer to Table 5 for
command definitions). In addition, the following hard-
ware data protection measures prevent accidental
erasure or programming, which might otherwise be
START
caused by spurious system level signals during V
power-up and power-down transitions, or from system
noise.
CC
RESET# = VID
(Note 1)
Low V
Write Inhibit
CC
Perform Erase or
Program Operations
When V
is less than V
, the device does not
LKO
CC
accept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
RESET# = VIH
device resets. Subsequent writes are ignored until V
CC
is greater than V
. The system must provide the
LKO
proper signals to the control pins to prevent uninten-
Temporary Sector
Unprotect Completed
(Note 2)
tional writes when V is greater than V
.
CC
LKO
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Notes:
Logical Inhibit
1. All protected sectors unprotected.
Write cycles are inhibited by holding any one of OE# =
2. All previously protected sectors are protected once
again.
V , CE# = V or WE# = V . To initiate a write cycle,
IL
IH
IH
CE# and WE# must be a logical zero while OE# is a
logical one.
Figure 2. Temporary Sector Unprotect Operation
Power-Up Write Inhibit
If WE# = CE# = V and OE# = V during power up, the
IL
IH
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
14
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
COMMAND DEFINITIONS
Writing specific address and data commands or
sequences into the command register initiates device
operations. Table 5 defines the valid register command
sequences. Writing incorrect address and data
values or writing them in the improper sequence
resets the device to reading array data.
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the
sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must
be written to return to reading array data (also applies
to autoselect during Erase Suspend).
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to
reading array data (also applies during Erase
Suspend).
Reading Array Data
Autoselect Command Sequence
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or
Embedded Erase algorithm.
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
Table 5 shows the address and data requirements. This
method is an alternative to that shown in Table 4, which
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The
system can read array data using the standard read
timings, except that if it reads at an address within
erase-suspended sectors, the device outputs status
data. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase
Suspend/Erase Resume Commands” for more infor-
mation on this mode.
is intended for PROM programmers and requires V
on address bit A9.
ID
The autoselect command sequence is initiated by
writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect
mode, and the system may read at any address any
number of times, without initiating another command
sequence. A read cycle at address XX00h retrieves the
manufacturer code. A read cycle at address XX01h in
word mode (or 02h in byte mode) returns the device
code. A read cycle containing a sector address (SA)
and the address 02h in word mode (or 04h in byte
mode) returns 01h if that sector is protected, or 00h if it
is unprotected. Refer to Tables 2 and 3 for valid sector
addresses.
The system must issue the reset command to re-
enable the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See the “Reset
Command” section, next.
See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parame-
ters, and Figure 13 shows the timing diagram.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Word/Byte Program Command Sequence
Reset Command
Writing the reset command to the device resets the
device to reading array data. Address bits are don’t
care for this command.
The system may program the device by word or byte,
depending on the state of the BYTE# pin. Program-
ming is a four-bus-cycle operation. The program
command sequence is initiated by writing two unlock
write cycles, followed by the program set-up command.
The program address and data are written next, which
in turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or tim-
ings. The device automatically generates the program
pulses and verifies the programmed cell margin. Table
5 shows the address and data requirements for the
byte program command sequence.
The reset command may be written between the
sequence cycles in an erase command sequence
before erasing begins. This resets the device to reading
array data. Once erasure begins, however, the device
ignores reset commands until the operation is
complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operation by using
October 10, 2006 21521D6
Am29LV200B
15
D A T A S H E E T
DQ7, DQ6, or RY/BY#. See “Write Operation Status”
for information on these status bits.
START
Any commands written to the device during the
Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program-
ming operation. The Byte Program command
sequence should be reinitiated once the device has
reset to reading array data, to ensure data integrity.
Write Program
Command Sequence
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may halt
the operation and set DQ5 to “1”, or cause the Data#
Polling algorithm to indicate the operation was suc-
cessful. However, a succeeding read will show that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
Yes
No
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to
program bytes or words to the device faster than using
the standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write cycle
containing the unlock bypass command, 20h. The
device then enters the unlock bypass mode. A two-
cycle unlock bypass program command sequence is all
that is required to program in this mode. The first cycle
in this sequence contains the unlock bypass program
command, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total program-
ming time. Table 5 shows the requirements for the
command sequence.
No
Increment Address
Last Address?
Yes
Programming
Completed
Note: See Table 5 for program command sequence.
Figure 3. Program Operation
During the unlock bypass mode, only the Unlock
Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset
command sequence. The first cycle must contain the
program address and the data 90h. The second cycle
need only contain the data 00h. The device then
returns to reading array data.
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Table 5 shows
the address and data requirements for the chip erase
command sequence.
Figure 3 illustrates the algorithm for the program oper-
ation. See the Erase/Program Operations table in “AC
Characteristics” for parameters, and to Figure 17 for
timing diagrams.
Any commands written to the chip during the
Embedded Erase algorithm are ignored. Note that a
hardware reset during the chip erase operation imme-
diately terminates the operation. The Chip Erase
command sequence should be reinitiated once the
16
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
device has returned to reading array data, to ensure
operation. The Sector Erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
data integrity.
The system can determine the status of the erase oper-
ation by using DQ7, DQ6, DQ2, or RY/BY#. See “Write
Operation Status” for information on these status bits.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. (Refer to “Write Operation Status” for infor-
mation on these status bits.)
Figure 4 illustrates the algorithm for the erase opera-
tion. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to Figure 18 for
timing diagrams.
Figure 4 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
Figure 18 for timing diagrams.
Sector Erase Command Sequence
Erase Suspend/Erase Resume Commands
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. Table 5 shows the address and data
requirements for the sector erase command sequence.
The Erase Suspend command allows the system to
interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation.
Addresses are “don’t-cares” when writing the Erase
Suspend command.
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase algo-
rithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or
timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of
sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise the last address and command might not
be accepted, and erasure may begin. It is recom-
mended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector Erase
command is written. If the time between additional
sector erase commands can be assumed to be less
than 50 µs, the system need not monitor DQ3. Any
command other than Sector Erase or Erase
Suspend during the time-out period resets the
device to reading array data. The system must
rewrite the command sequence and any additional
sector addresses and commands.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter-
minates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended
sectors produces status data on DQ7–DQ0. The
system can use DQ7, or DQ6 and DQ2 together, to
determine if a sector is actively erasing or is erase-sus-
pended. See “Write Operation Status” for information
on these status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program oper-
ation. See “Write Operation Status” for more
information.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. Note that a hardware reset during the
sector erase operation immediately terminates the
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
October 10, 2006 21521D6
Am29LV200B
17
D A T A S H E E T
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
START
Write Erase
Command Sequence
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the
device has resumed erasing.
Data Poll
from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 5 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 4. Erase Operation
18
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
Command Definitions
Table 5. Am29LV200B Command Definitions
Bus Cycles (Notes 2–5)
Command
Sequence
(Note 1)
First
Second
Third
Addr
Fourth
Fifth
Sixth
Addr Data Addr Data
Data Addr Data Addr Data Addr Data
Read (Note 6)
Reset (Note 7)
1
1
RA
XXX
555
RD
F0
Word
2AA
555
2AA
555
2AA
555
555
AAA
555
Manufacturer ID
4
4
4
AA
AA
AA
55
55
55
90
90
90
X00
01
Byte
Word
Byte
Word
Byte
AAA
555
X01 223B
X02
3B
X01 22BF
Device ID,
Top Boot Block
AAA
555
AAA
555
Device ID,
Bottom Boot Block
AAA
AAA
X02
BF
XX00
XX01
00
(SA)
X02
Word
Byte
555
2AA
555
555
Sector Protect Verify
(Note 9)
4
AA
55
90
(SA)
X04
AAA
AAA
01
Word
Byte
Word
Byte
555
AAA
555
2AA
555
2AA
555
PA
555
AAA
555
Program
Unlock Bypass
4
3
AA
AA
55
55
A0
20
PA
PD
AAA
XXX
XXX
555
AAA
Unlock Bypass Program (Note 10)
Unlock Bypass Reset (Note 11)
2
2
A0
90
PD
00
XXX
2AA
555
2AA
555
Word
555
AAA
555
555
AAA
555
2AA
555
2AA
555
555
Chip Erase
Byte
6
6
AA
AA
55
55
80
80
AA
AA
55
55
10
30
AAA
555
AAA
Word
Sector Erase
Byte
SA
AAA
XXX
XXX
AAA
AAA
Erase Suspend (Note 12)
Erase Resume (Note 13)
1
1
B0
30
Legend:
X = Don’t care
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
RA = Address of the memory location to be read.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A16–A12 uniquely select any sector.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
Notes:
1. See Table 1 for description of bus operations.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
10. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles.
11. The Unlock Bypass Reset command is required to return to
reading array data when the device is in the unlock bypass
mode.
5. Address bits A16–A11 are don’t cares for unlock and
command cycles, unless SA or PA required.
12. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
6. No unlock or command cycles required when reading array
data.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
13. The Erase Resume command is valid only during the Erase
Suspend mode.
8. The fourth cycle of the autoselect command sequence is a
read cycle.
October 10, 2006 21521D6
Am29LV200B
19
D A T A S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the
status of a write operation: DQ2, DQ3, DQ5, DQ6,
DQ7, and RY/BY#. Table 6 and the following subsec-
tions describe the functions of these bits. DQ7,
RY/BY#, and DQ6 each offer a method for determining
whether a program or erase operation is complete or in
progress. These three bits are discussed first.
Table 6 shows the outputs for Data# Polling on DQ7.
Figure 5 shows the Data# Polling algorithm.
START
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host
system whether an Embedded Algorithm is in progress
or completed, or whether the device is in Erase Sus-
pend. Data# Polling is valid after the rising edge of the
final WE# pulse in the program or erase command
sequence.
Read DQ7–DQ0
Addr = VA
Yes
DQ7 = Data?
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum pro-
grammed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for
approximately 1 µs, then the device returns to reading
array data.
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum output
described for the Embedded Program algorithm: the
erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status
information on DQ7.
Yes
DQ7 = Data?
No
PASS
FAIL
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 100 µs, then
the device returns to reading array data. If not all
selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores
the selected sectors that are protected.
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at DQ7–
DQ0 on the following read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted low. Figure 19, Data#
Polling Timings (During Embedded Algorithms), in the
“AC Characteristics” section illustrates this.
Figure 5. Data# Polling Algorithm
20
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
Table 6 shows the outputs for Toggle Bit I on DQ6.
RY/BY#: Ready/Busy#
Figure 6 shows the toggle bit algorithm. Figure 20 in the
“AC Characteristics” section shows the toggle bit timing
diagrams. Figure 21 shows the differences between
DQ2 and DQ6 in graphical form. See also the subsec-
tion on DQ2: Toggle Bit II.
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output,
several RY/BY# pins can be tied together in parallel
DQ2: Toggle Bit II
with a pull-up resistor to V
.
CC
The “Toggle Bit II” on DQ2, when used with DQ6, indi-
cates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready),
the device is ready to read array data (including during
the Erase Suspend mode), or is in the standby mode.
Table 6 shows the outputs for RY/BY#. Figures 14, 17
and 18 shows RY/BY# for reset, program, and erase
operations, respectively.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for era-
sure. (The system may use either OE# or CE# to
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-sus-
pended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for era-
sure. Thus, both status bits are required for sector and
mode information. Refer to Table 6 to compare outputs
for DQ2 and DQ6.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase
operation), and during the sector erase time-out.
Figure 6 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection.
Figure 20 shows the toggle bit timing diagram. Figure
21 shows the differences between DQ2 and DQ6 in
graphical form.
During an Embedded Program or Erase algorithm
operation, successive read cycles to any address
cause DQ6 to toggle. The system may use either OE#
or CE# to control the read cycles. When the operation
is complete, DQ6 stops toggling.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles
for approximately 100 µs, then returns to reading array
data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are
protected.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6 for the following discussion. When-
ever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has com-
pleted the program or erase operation. The system can
read array data on DQ7–DQ0 on the following read
cycle.
The system can use DQ6 and DQ2 together to deter-
mine whether a sector is actively erasing or is erase-
suspended. When the device is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on DQ7: Data# Polling).
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is
high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped tog-
gling just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the
device did not completed the operation successfully,
and the system must write the reset command to return
to reading array data.
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded
Program algorithm is complete.
October 10, 2006 21521D6
Am29LV200B
21
D A T A S H E E T
The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to
determine the status of the operation (top of Figure 6).
START
Read DQ7–DQ0
(Note 1)
DQ5: Exceeded Timing Limits
Read DQ7–DQ0
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.
No
Toggle Bit
= Toggle?
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously pro-
grammed to “0.” Only an erase operation can change
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation has
exceeded the timing limits, DQ5 produces a “1.”
Yes
No
DQ5 = 1?
Yes
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
(Notes
1, 2)
Read DQ7–DQ0
Twice
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If addi-
tional sectors are selected for erasure, the entire time-
out also applies after each additional sector erase com-
mand. When the time-out is complete, DQ3 switches
from “0” to “1.” If the time between additional sector
erase commands from the system can be assumed to
be less than 50 µs, the system need not monitor DQ3.
See also the “Sector Erase Command Sequence”
section.
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure the device has
accepted the command sequence, and then read DQ3.
If DQ3 is “1”, the internally controlled erase cycle has
begun; all further commands (other than Erase Sus-
pend) are ignored until the erase operation is complete.
If DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the system software should check the status
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last command might not have been
accepted. Table 6 shows the outputs for DQ3.
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1” . See text.
Figure 6. Toggle Bit Algorithm
22
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
Table 6. Write Operation Status
DQ7
DQ5
DQ2
Operation
(Note 2)
DQ6
(Note 1)
DQ3
N/A
1
(Note 2)
RY/BY#
Embedded Program Algorithm
Embedded Erase Algorithm
DQ7#
0
Toggle
Toggle
0
0
No toggle
Toggle
0
0
Standard
Mode
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Erase
Suspend Reading within Non-Erase
Data
Data
Data
0
Data
N/A
Data
N/A
1
0
Mode
Suspended Sector
Erase-Suspend-Program
DQ7#
Toggle
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
October 10, 2006 21521D6
Am29LV200B
23
D A T A S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
20 ns
20 ns
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65°C to +125°C
+0.8 V
Voltage with Respect to Ground
–0.5 V
–2.0 V
V
(Note 1) . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
CC
A9, OE#, and
RESET# (Note 2). . . . . . . . . . . .–0.5 V to +12.5 V
20 ns
All other pins (Note 1) . . . . . –0.5 V to V +0.5 V
CC
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Figure 7. Maximum Negative
Overshoot Waveform
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may overshoot VSS to
–2.0 V for periods of up to 20 ns. Maximum DC voltage on
input or I/O pins is VCC +0.5 V. During voltage transitions,
input or I/O pins may overshoot to VCC +2.0 V for periods
up to 20 ns. See Figure 7 and Figure 8.
20 ns
2. Minimum DC input voltage on pins A9, OE#, and RESET#
is –0.5 V. During voltage transitions, A9, OE#, and
RESET# may overshoot VSS to –2.0 V for periods of up to
20 ns. See Figure 7. Maximum DC input voltage on pin A9
is +12.5 V which may overshoot to 14.0 V for periods up
to 20 ns.
VCC
+2.0 V
VCC
+0.5 V
2.0 V
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
20 ns
20 ns
Figure 8. Maximum Positive
Overshoot Waveform
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T ) . . . . . . . . . . . 0°C to +70°C
A
Industrial (I) Devices
Ambient Temperature (T ) . . . . . . . . . –40°C to +85°C
A
Extended (E) Devices
Ambient Temperature (T ) . . . . . . . . –55°C to +125°C
A
V
V
V
Supply Voltages
CC
CC
CC
for regulated voltage range. . . . .+3.0 V to +3.6 V
for full voltage range . . . . . . . . . .+2.7 V to +3.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
24
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
Test Conditions
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Min
Typ
Max
±1.0
35
Unit
µA
VIN = VSS to VCC
,
ILI
Input Load Current
VCC = VCC max
ILIT
ILO
A9 Input Load Current
Output Leakage Current
VCC = VCC max; A9 = 12.5 V
µA
VOUT = VSS to VCC
,
±1.0
µA
VCC = VCC max
5 MHz
1 MHz
5 MHz
1 MHz
7
2
7
2
12
4
CE# = VIL, OE# = VIH,
Byte Mode
VCC Active Read Current
(Notes 1, 2)
ICC1
mA
12
4
CE# = VIL, OE# = VIH,
Word Mode
VCC Active Write Current
(Notes 2, 3, and 5)
ICC2
CE# = VIL, OE# = VIH
15
30
mA
ICC3
ICC4
VCC Standby Current (Note 2)
VCC Reset Current (Note 2)
CE#, RESET# = VCC±0.3 V
RESET# = VSS ± 0.3 V
0.2
0.2
5
5
µA
µA
Automatic Sleep Mode (Notes 2, VIH = VCC 0.3 V;
ICC5
0.2
5
µA
4)
VIL = VSS ± 0.3 V
VIL
VIH
Input Low Voltage
Input High Voltage
–0.5
0.8
V
V
0.7 x VCC
VCC + 0.3
Voltage for Autoselect and
Temporary Sector Unprotect
VID
VCC = 3.3 V
11.5
12.5
0.45
V
VOL
VOH1
VOH2
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
IOH = –2.0 mA, VCC = VCC min
IOH = –100 µA, VCC = VCC min
V
V
0.85 VCC
VCC–0.4
Output High Voltage
Low VCC Lock-Out Voltage
(Note 5)
VLKO
2.3
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.
2. Maximum ICC specifications are tested with VCC = VCCmax
.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.
5. Not 100% tested.
October 10, 2006 21521D6
Am29LV200B
25
D A T A S H E E T
DC CHARACTERISTICS (Continued)
Zero Power Flash
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 9.
I
Current vs. Time (Showing Active and Automatic Sleep Currents)
CC1
10
8
3.6 V
2.7 V
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C
Figure 10. Typical I
vs. Frequency
CC1
26
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
TEST CONDITIONS
Table 7. Test Specifications
3.3 V
-55R,
-70
-90,
-120
Test Condition
Output Load
Unit
2.7 kΩ
1 TTL gate
Device
Under
Test
Output Load Capacitance, CL
(including jig capacitance)
30
100
pF
C
L
6.2 kΩ
Input Rise and Fall Times
Input Pulse Levels
5
0.0–3.0
ns
V
Input timing measurement
reference levels
1.5
1.5
V
V
Note: Diodes are IN3064 or equivalent
Output timing measurement
reference levels
Figure 11. Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Does Not Apply
Changing, State Unknown
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Input
Measurement Level
Output
Figure 12. Input Waveforms and Measurement Levels
October 10, 2006 21521D6
Am29LV200B
27
D A T A S H E E T
AC CHARACTERISTICS
Read Operations
Parameter
Speed Option
JEDEC
Std Description
Test Setup
Min
-55R
-70
-90
-120 Unit
tAVAV
tRC
Read Cycle Time (Note 1)
55
70
90
120
120
ns
ns
CE# = VIL
OE# = VIL
tAVQV
tACC Address to Output Delay
Max
55
70
90
tELQV
tGLQV
tEHQZ
tGHQZ
tCE
tOE
tDF
tDF
Chip Enable to Output Delay
OE# = VIL Max
55
30
15
15
70
30
25
25
90
35
30
30
120
50
ns
ns
ns
ns
ns
Output Enable to Output Delay
Max
Max
Max
Min
Chip Enable to Output High Z (Note 1)
Output Enable to Output High Z (Note 1)
30
30
Read
0
Output Enable
Hold Time (Note 1)
tOEH
Toggle and
Data# Polling
Min
Min
10
ns
ns
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1)
tAXQX
tOH
0
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 7 for test specifications.
tRC
Addresses Stable
tACC
Addresses
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0 V
Figure 13. Read Operations Timings
28
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std Description
Test Setup
Max
All Speed Options
Unit
RESET# Pin Low (During Embedded
tREADY
20
µs
Algorithms) to Read or Write (See Note)
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
tREADY
Max
500
ns
tRP
tRH
RESET# Pulse Width
Min
Min
Min
Min
500
50
20
0
ns
ns
µs
ns
RESET# High Time Before Read (See Note)
tRPD RESET# Low to Standby Mode
tRB RY/BY# Recovery Time
Note: Not 100% tested.
RY/BY#
CE#, OE#
RESET#
tRH
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 14. RESET# Timings
October 10, 2006 21521D6
Am29LV200B
29
D A T A S H E E T
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
Speed Options
JEDEC
Std
tELFL/ ELFH
tFLQZ
tFHQV
Description
-55R
-70
-90
-120
Unit
ns
t
CE# to BYTE# Switching Low or High
BYTE# Switching Low to Output HIGH Z
BYTE# Switching High to Output Active
Max
Max
Min
5
15
55
25
70
30
90
30
ns
120
ns
CE#
OE#
BYTE#
tELFL
Data Output
(DQ0–DQ14)
Data Output
(DQ0–DQ7)
BYTE#
Switching
from word
to byte
DQ0–DQ14
Address
Input
DQ15
Output
mode
DQ15/A-1
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte
to word
Data Output
(DQ0–DQ7)
Data Output
(DQ0–DQ14)
DQ0–DQ14
DQ15/A-1
mode
Address
Input
DQ15
Output
tFHQV
Figure 15. BYTE# Timings for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS
)
tHOLD (tAH
)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 16. BYTE# Timings for Write Operations
Am29LV200B
30
21521D6 October 10, 2006
D A T A S H E E T
AC CHARACTERISTICS
Erase/Program Operations
Parameter
Speed Options
JEDEC
tAVAV
Std
tWC
tAH
tDS
tWP
tAS
tDH
Description
-55R
55
-70
70
45
35
35
-90
90
45
45
35
-120
120
50
Unit
ns
Write Cycle Time (Note 1)
Address Hold Time
Data Setup Time
Write Pulse Width
Address Setup Time
Data Hold Time
Min
tWLAX
tDVWH
tWLWH
tAVWL
tWHDX
Min
Min
Min
Min
Min
Min
45
ns
20
50
ns
30
50
ns
0
0
0
ns
ns
tOES Output Enable Setup Time
ns
Read Recovery Time Before Write
tGHWL
tGHWL
Min
0
ns
(OE# High to WE# Low)
tELWL
tWHEH
tWHWL
tCS
tCH
CE# Setup Time
CE# Hold Time
Min
Min
Min
Typ
Typ
Typ
Min
Min
Max
0
0
ns
ns
ns
tWPH Write Pulse Width High
30
9
Byte
tWHWH1 tWHWH1 Programming Operation (Note 2)
tWHWH2 tWHWH2 Sector Erase Operation (Note 2)
µs
Word
11
0.7
50
0
sec
µs
tVCS
tRB
VCC Setup Time (Note 1)
Recovery Time from RY/BY#
ns
tBUSY Program/Erase Valid to RY/BY# Delay
90
ns
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
October 10, 2006 21521D6
Am29LV200B
31
D A T A S H E E T
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
tAS
PA
tWC
Addresses
555h
PA
PA
tAH
CE#
OE#
tCH
tWHWH1
tWP
WE#
Data
tWPH
tCS
tDS
tDH
PD
DOUT
A0h
Status
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17. Program Operation Timings
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Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
Read Status Data
VA
tAS
SA
tWC
VA
Addresses
CE#
2AAh
555h for chip erase
tAH
tCH
OE#
tWP
WE#
tWPH
tWHWH2
tCS
tDS
tDH
In
Data
Complete
55h
30h
Progress
10 for Chip Erase
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. Illustration shows device in word mode.
Figure 18. Chip/Sector Erase Operation Timings
October 10, 2006 21521D6
Am29LV200B
33
D A T A S H E E T
AC CHARACTERISTICS
tRC
VA
Addresses
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
High Z
DQ7
Valid Data
Complement
Complement
True
DQ0–DQ6
Valid Data
Status Data
True
Status Data
tBUSY
RY/BY#
Note:VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read
cycle.
Figure 19. Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
CE#
VA
tACC
tCE
VA
VA
VA
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
DQ6/DQ2
RY/BY#
Valid Status
(first read)
Valid Status
Valid Status
Valid Data
(second read)
(stops toggling)
tBUSY
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 20. Toggle Bit Timings (During Embedded Algorithms)
34
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
AC CHARACTERISTICS
Enter
Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Resume
Erase
Erase Suspend
Read
Erase
Suspend
Program
Erase
Complete
WE#
Erase
Erase Suspend
Read
DQ6
DQ2
Note: The system may use OE# and CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 21. DQ2 vs. DQ6
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
Min
500
ns
RESET# Setup Time for Temporary Sector
Unprotect
tRSP
4
µs
Note:Not 100% tested.
12 V
RESET#
0 or 3 V
0 or 3 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
Figure 22. Temporary Sector Unprotect Timing Diagram
October 10, 2006 21521D6
Am29LV200B
35
D A T A S H E E T
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Sector Protect/Unprotect
60h 60h
Valid*
Valid*
Status
Verify
40h
Data
Sector Protect: 150 µs
Sector Unprotect: 15 ms
1 µs
CE#
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 23. Sector Protect/Unprotect Timing Diagram
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Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
Speed Options
JEDEC
tAVAV
Std
tWC
tAH
Description
-55R
55
-70
70
45
35
35
-90
90
45
45
35
-120
120
50
Unit
ns
Write Cycle Time (Note 1)
Address Hold Time
Data Setup Time
Min
Min
Min
Min
Min
Min
Min
tELAX
tDVEH
tELEH
tAVEL
45
ns
tDS
35
50
ns
tCP
CE# Pulse Width
35
50
ns
tAS
Address Setup Time
Data Hold Time
0
0
0
ns
tEHDX
tDH
tOES
ns
Output Enable Setup Time
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHEL
tGHEL
Min
0
ns
tWLEL
tEHWH
tEHEL
tWS
tWH
WE# Setup Time
WE# Hold Time
Min
Min
Min
Typ
Typ
Typ
0
0
ns
ns
ns
tCPH
CE# Pulse Width High
30
9
Byte
Programming Operation
(Note 2)
tWHWH1
tWHWH2
Notes:
tWHWH1
tWHWH2
µs
Word
11
0.7
Sector Erase Operation (Note 2)
sec
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
October 10, 2006 21521D6
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37
D A T A S H E E T
AC CHARACTERISTICS
555 for program
PA for program
2AA for erase
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tWH
tAS
tAH
WE#
OE#
tGHEL
tWHWH1 or 2
tCP
CE#
Data
tWS
tCPH
tDS
tBUSY
tDH
DQ7#
DOUT
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device.
2. Figure indicates the last two bus cycles of the command sequence.
3. Word mode address used as an example.
Figure 24. Alternate CE# Controlled Write Operation Timings
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Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
s
Comments
Sector Erase Time
Chip Erase Time
0.7
5
15
Excludes 00h programming
prior to erasure (Note 4)
s
Byte Programming Time
Word Programming Time
9
300
360
6.9
µs
µs
s
11
2.3
1.5
Excludes system level
overhead (Note 5)
Byte Mode
Word Mode
Chip Programming Time
(Note 3)
4.5
s
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V (3.0 V for regulated speed options), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 5 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
VCC Current
–1.0 V
VCC + 1.0 V
+100 mA
–100 mA
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Input Capacitance
Test Setup
VIN = 0
Typ
6
Max
7.5
12
Unit
pF
CIN
COUT
CIN2
Output Capacitance
Control Pin Capacitance
VOUT = 0
VIN = 0
8.5
7.5
pF
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Test Conditions
Min
10
Unit
Years
Years
150°C
125°C
Minimum Pattern Data Retention Time
20
October 10, 2006 21521D6
Am29LV200B
39
D A T A S H E E T
PHYSICAL DIMENSIONS*
TS 048—48-Pin Standard TSOP
Dwg rev AA; 10/99
* For reference only. BSC is an ANSI standard for Basic Space Centering.
40
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
PHYSICAL DIMENSIONS
SO 044—44-Pin Small Outline Package
Dwg rev AC; 10/99
October 10, 2006 21521D6
Am29LV200B
41
D A T A S H E E T
PHYSICAL DIMENSIONS
FBA048—48-Ball Fine-Pitch Ball Grid Array, 0.80 mm pitch, 6 x 8 mm package
Dwg rev AF; 10/99
42
Am29LV200B
21521D6 October 10, 2006
D A T A S H E E T
Operating Ranges
The V supply voltage for regulated devices is 3.0–
REVISION SUMMARY
CC
Revision A (January 1998)
3.6 V. The V
supply voltage for full voltage range
CC
devices is 2.7–3.6 V.
Initial release.
Revision C+2 (May 17, 1999)
Revision B (July 1998)
Ordering Information
Global
Boot Code Sector Architecture: Added “B = Bottom
Sector”.
Expanded data sheet from Advanced Information to
Preliminary version.
Distinctive Characteristics
Revision C+3 (June 1, 1999)
Physical Dimensions
Changed “Manufactured on 0.35 µm process technology”
to “Manufactured on 0.32 µm process technology”.
TS 048: The drawing previously showed the TSR 048
package; now shows the proper package.
General Description
Second paragraph: Changed “This device is manufac-
tured using AMD’s 0.35 µm process technology” to
“This device is manufactured using AMD’s 0.32 µm
process technology”.
Revision C+4 (July 2, 1999)
Global
Deleted references to the 50R speed option.
Revision C (January 1999)
Global
Revision C+5 (August 25, 1999)
Ordering Information
Deleted the 80 ns speed option. Added the -50R and
-55R speed options.
Valid Combinations: Restored package options for
Am29LV200BT-70 and Am29LV200BB-70.
Distinctive Characteristics
Revision D (November 18, 1999)
Added 20-year data retention subbullet.
AC Characteristics—Figure 17. Program
Operations Timing and Figure 18. Chip/Sector
Erase Operations
Connection Diagrams
Reverse TSOP: Moved the circle marking to upper right
corner from the upper left corner, added an upside
down triangle marking to the upper left corner.
Deleted t
high.
and changed OE# waveform to start at
GHWL
Ordering Information
Physical Dimensions
Package Type: Added “S = 44-Pin Small Outline Package
(SO 044)”.
Replaced figures with more detailed illustrations.
DC Characteristics—CMOS Compatible
Revision D+1 (November 13, 2000)
Global
I
, I
, I
, I
: Added Note “Maximum I spec-
CC1 CC2 CC3 CC4 CC
ifications are tested with V = V
.
CCmax
CC
Added table of contents. Deleted burn-in option from
Ordering Information section.
AC Characteristics—Alternate CE# Controlled
Erase/Program Operations
Revision D+2 (April 12, 2002)
Global
Corrected speed options.
Erase and Programming Performance
Added FBA048 package.
Chip Erase Time: Changed Typical value to 5 s from
7 s.
Revision D+3 (June 11, 2004)
Ordering Information
Chip Programming Time: Changed Max value for Byte
Mode to 6.9 s from 6.8 s. Changed Max value for Word
Mode to 4.5 s from 4.3 s.
Added Pb-free packages.
Note 2: Added “(3.0 V for regulated speed options)”.
Revision D+4 (September 20, 2005)
Corrected Valid Combinations table.
Revision C+1 (March 27, 1999)
Ordering Information
Revision D+5 (January 4, 2006)
Removed TSR048 48-pin Reverse TSOP option.
Corrected the example part number to include the “R”
after “-50.”
October 10, 2006 21521D6
Am29LV200B
43
D A T A S H E E T
Erase and Program Operations table
Changed t to a maximum specification.
Revision D6 (October 10, 2006)
Global
BUSY
Added notice on product availability to cover sheet and
first page of data sheet.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable ( i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor de-
vices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design mea-
sures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those products.
Trademarks
Copyright © 1998-2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trade-
marks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are
for identification purposes only and may be trademarks of their respective companies.
Copyright © 2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are
trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.
44
Am29LV200B
21521D6 October 10, 2006
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