AME8806IEHA [AME]

600mA CMOS LDO; 600毫安CMOS LDO
AME8806IEHA
型号: AME8806IEHA
厂家: ANALOG MICROELECTRONICS    ANALOG MICROELECTRONICS
描述:

600mA CMOS LDO
600毫安CMOS LDO

文件: 总12页 (文件大小:93K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Analog Microelectronics, Inc.  
AME8806 / 8809 / 8842  
600mA CMOS LDO  
n General Description  
n Features  
The AME8806/8809 family of positive, linear regula-  
tors feature low quiescent current (30µA typ.) with low  
dropout voltage, making them ideal for battery applica-  
tions. The space-saving SO-8 package is attractive for  
"Pocket" and "Hand Held" applications.  
l Very Low Dropout Voltage  
l Guaranteed 600mA Output  
l Accurate to within 1.5%  
l 30µA Quiescent Current  
l Over-Temperature Shutdown  
l Current Limiting  
These rugged devices have both Thermal Shutdown,  
and Current Fold-back to prevent device failure under  
the "Worst" of operating conditions.  
l Short Circuit Current Fold-back  
l Noise Reduction Bypass Capacitor  
l Power-Saving Shutdown Mode  
l Space-Saving SO-8 Package  
l Factory Pre-set Output Voltages  
l Low Temperature Coefficient  
In applications requiring a low noise, regulated supply,  
place a 1000 pF capacitor between Bypass and ground.  
The AME8806/8809 is stable with an output capacitance  
of 2.2µF or greater.  
n Applications  
l Instrumentation  
l Portable Electronics  
l Wireless Devices  
l Cordless Phones  
l PC Peripherals  
n Functional Block Diagram  
IN  
OUT  
l Battery Powered Widgets  
l Electronic Scales  
Overcurrent  
Shutdown  
n Typical Application  
Thermal  
Shutdown  
OUT  
IN  
OUT  
IN  
EN  
BYP  
AME8806  
AME8809  
BYP  
EN  
GND  
R1  
R2  
C2  
C3  
C1  
AMP  
5V  
1µF  
1 F  
µ
2.2  
µ
F
V
ref=1.215V  
GND  
1
Analog Microelectronics, Inc.  
600mA CMOS LDO  
AME8806 / 8809 / 8842  
n Pin Configuration  
SO-8 Top View  
SO-8 Top View  
IN  
OUT  
GND  
GND  
BYP  
EN  
IN  
GND  
GND  
GND  
GND  
GND  
GND  
EN  
OUT  
BP  
AME8809  
AME8806  
PG  
IN  
GND  
GND  
GND  
GND  
OUT  
EN  
AME8842  
2
Analog Microelectronics, Inc.  
AME8806 / 8809 / 8842  
600mA CMOS LDO  
n Ordering Information  
Part Number  
Marking  
Output Package Operating Temp.  
8806  
AEHA  
yyww  
8806  
BEHA  
yyww  
8806  
CEHA  
yyww  
8806  
DEHA  
yyww  
8806  
EEHA  
yyww  
8806  
FEHA  
yyww  
8806  
GEHA  
yyww  
8806  
HEHA  
yyww  
8806  
IEHA  
yyww  
8806  
JEHA  
yyww  
8806  
KEHA  
yyww  
8806  
LEHA  
yyww  
8806  
MEHA  
yyww  
8806  
NEHA  
yyww  
8806  
-40OC to +85OC  
AME8806AEHA  
3.3V  
3.0V  
2.8V  
2.5V  
3.8V  
3.6V  
3.5V  
2.7V  
3.4V  
2.85V  
3.7V  
1.5V  
1.8V  
2.9V  
3.1V  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
AME8806BEHA  
AME8806CEHA  
AME8806DEHA  
AME8806EEHA  
AME8806FEHA  
AME8806GEHA  
AME8806HEHA  
AME8806IEHA  
AME8806JEHA  
AME8806KEHA  
AME8806LEHA  
AME8806MEHA  
AME8806NEHA  
AME8806OEHA  
OEHA  
yyww  
3
Analog Microelectronics, Inc.  
600mA CMOS LDO  
AME8806 / 8809 / 8842  
n Ordering Information  
Part Number  
Marking  
Output Package  
Operating Temp.  
8809  
AEHA  
yyww  
8809  
BEHA  
yyww  
8809  
CEHA  
yyww  
8809  
DEHA  
yyww  
8809  
EEHA  
yyww  
8809  
FEHA  
yyww  
8809  
GEHA  
yyww  
8809  
HEHA  
yyww  
8809  
IEHA  
yyww  
8809  
JEHA  
yyww  
8809  
KEHA  
yyww  
8809  
LEHA  
yyww  
8809  
MEHA  
yyww  
8809  
NEHA  
yyww  
8809  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
AME8809AEHA  
3.3V  
3.0V  
2.8V  
2.5V  
3.8V  
3.6V  
3.5V  
2.7V  
3.4V  
2.85V  
3.7V  
1.5V  
1.8V  
2.9V  
3.1V  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
AME8809BEHA  
AME8809CEHA  
AME8809DEHA  
AME8809EEHA  
AME8809FEHA  
AME8809GEHA  
AME8809HEHA  
AME8809IEHA  
AME8809JEHA  
AME8809KEHA  
AME8809LEHA  
AME8809MEHA  
AME8809NEHA  
AME8809OEHA  
OEHA  
yyww  
Please consult AME sales office or authorized Rep./Distributor  
for other output voltage and package type availability.  
4
Analog Microelectronics, Inc.  
AME8806 / 8809 / 8842  
600mA CMOS LDO  
n Ordering Information  
Part Number  
Marking  
Output  
Package  
Operating Temp.  
8842  
AEHA  
yyww  
8842  
BEHA  
yyww  
8842  
CEHA  
yyww  
8842  
DEHA  
yyww  
8842  
EEHA  
yyww  
8842  
FEHA  
yyww  
8842  
GEHA  
yyww  
8842  
HEHA  
yyww  
8842  
IEHA  
yyww  
8842  
JEHA  
yyww  
8842  
KEHA  
yyww  
8842  
LEHA  
yyww  
8842  
M EHA  
yyww  
8842  
NEHA  
yyww  
8842  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
-40OC to +85OC  
AME8842AEHA  
3.3V  
SO-8  
AME8842BEHA  
AME8842CEHA  
AME8842DEHA  
AME8842EEHA  
AME8842FEHA  
AME8842GEHA  
AME8842HEHA  
AME8842IEHA  
AME8842JEHA  
AME8842KEHA  
AME8842LEHA  
AME8842M EHA  
AME8842NEHA  
AME8842OEHA  
3.0V  
2.8V  
2.5V  
3.8V  
3.6V  
3.5V  
2.7V  
3.4V  
2.85V  
3.7V  
1.5V  
1.8V  
2.9V  
3.1V  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
SO-8  
OEHA  
yyww  
Please consult AM E sales office or authorized Rep./Distributor  
for other output voltage and package type availability.  
5
Analog Microelectronics, Inc.  
600mA CMOS LDO  
AME8806 / 8809 / 8842  
n Absolute Maximum Ratings  
Parameter  
Input Voltage  
Maximum  
Unit  
V
8
Output Current  
A
PD / (VIN - VO)  
GND - 0.3 to VIN + 0.3  
B
Input, Output Voltage  
ESD Classification  
V
n Recommended Operating Conditions  
Parameter  
Ambient Temperature Range  
Junction Temperature  
Rating  
Unit  
oC  
-40 to +85  
-40 to +125  
oC  
n Thermal Information  
Parameter  
Maximum  
Unit  
oC / W  
Thermal Resistance (  
θja  
)
123.7  
Internal Power Dissipation (PD)  
810  
150  
300  
mW  
oC  
( T = 100oC)  
Maximum Junction Temperature  
oC  
Maximum Lead Temperature ( 10 Sec)  
Caution: Stress above the listed absolute rating may cause permanent damage to the device  
6
Analog Microelectronics, Inc.  
AME8806 / 8809 / 8842  
600mA CMOS LDO  
n Electrical Specifications  
TA = 25oC unless otherwise noted  
Test Condition  
Parameter  
Input Voltage  
Symbol  
VIN  
Min  
Typ Max Units  
Note 1  
-1.5  
8
V
Output Voltage Accuracy  
VO  
IO=1mA  
1.5  
%
1.5V<VO(NOM)<=2.0V  
1400  
800  
600  
IO=600mA  
See  
chart  
Dropout Voltage  
VDROPOUT  
2.0V<VO(NOM)<=2.8V  
2.8V<VO(NOM)<3.8V  
mV  
VO=VONOM -2.0%  
Output Current  
IO  
ILIM  
ISC  
IQ  
VO>1.2V  
600  
600  
mA  
mA  
mA  
Current Limit  
VO>1.2V  
VO<0.8V  
800  
300  
30  
Short Circuit Current  
Quiescent Current  
Ground Pin Current  
600  
50  
IO=0mA  
A
µ
IGND  
IO=1mA to 600mA  
30  
50  
A
µ
VO < 2.0V  
0.15  
0.1  
1
%
%
IO=5mA  
VIN=VO+1 to VO+2  
Line Regulation  
REGLINE  
VO >= 2.0V  
0.02  
0.2  
150  
30  
Load Regulation  
REGLOAD  
OTS  
IO=1mA to 600mA  
%
oC  
Over Temerature Shutdown  
Over Temerature Hysterisis  
VO Temperature Coefficient  
oC  
OTH  
ppm/oC  
TC  
30  
f=1kHz  
f=10kHz  
f=100kHz  
75  
IO=100mA  
C =2.2 F ceramic  
Power Supply Rejection  
PSRR  
55  
dB  
µ
O
CBYP=0.01 F  
µ
30  
Co=2.2 F  
30  
f=10Hz to 100kHz  
µ
Output Voltage Noise  
EN Input Threshold  
eN  
Vrms  
µ
IO=10mA,CBYP=0.01 F  
µ
Co=100 F  
20  
µ
VEH  
VEL  
IEH  
VIN=2.7V to 8V  
2.0  
0
Vin  
0.4  
0.1  
0.5  
1
V
V
VIN=2.7V to 8V  
V
EN=VIN, VIN=2.7V to 8V  
A
µ
EN Input Bias Current  
IEL  
VEN=0V, VIN=2.7V to 8V  
VIN=5V, VO=0V, VEN<VEL  
A
µ
Shutdown Supply Current  
ISD  
0.5  
A
µ
Note1:VIN(min)=VOUT+VDROPOUT  
7
Analog Microelectronics, Inc.  
600mA CMOS LDO  
AME8806 / 8809 / 8842  
n Detailed Description  
The AME8806/8809 family of CMOS regulators con-  
tain a PMOS pass transistor, voltage reference, error  
amplifier, over-current protection, and thermal shut-  
down.  
A third capacitor can be connected between the BY-  
PASS pin and GND. This capacitor can be a low cost  
Polyester Film variety between the value of 0.001 ~  
0.01µF. A larger capacitor improves the AC ripple re-  
jection, but also makes the output come up slowly. This  
"Soft" turn-on is desirable in some applications to limit  
turn-on surges.  
The P-channel pass transistor receives data from the  
error amplifier, over-current shutdown, and thermal pro-  
tection circuits. During normal operation, the error am-  
plifier compares the output voltage to a precision refer-  
ence. Over-current and Thermal shutdown circuits be-  
come active when the junction temperature exceeds  
All capacitors should be placed in close proximity to  
the pins. A "Quiet" ground termination is desirable.  
This can be achieved with a "Star" connection.  
o
150 C, or the current exceeds 600mA. During thermal  
shutdown, the output voltage remains low. Normal op-  
eration is restored when the junction temperature drops  
o
below 120 C.  
n Enable  
The Enable pin normally floats high. When actively,  
pulled low, the PMOS pass transistor shuts off, and all  
internal circuits are powered down. In this state, the  
quiescent current is less than 1µA. This pin behaves  
much like an electronic switch.  
The AME8806/8809 switches from voltage mode to cur-  
rent mode when the load exceeds the rated output cur-  
rent. This prevents over-stress. The AME8806/8809  
also incorporates current foldback to reduce power dis-  
sipation when the output is short circuited. This feature  
becomes active when the output drops below 0.8 volts,  
and reduces the current flow by 65%. Full current is  
restored when the voltage exceeds 0.8 volts.  
n External Capacitors  
The AME8806/8809 is stable with an output capacitor  
to ground of 2.2µF or greater. Ceramic capacitors have  
the lowest ESR, and will offer the best AC performance.  
Conversely, Aluminum Electrolytic capacitors exhibit  
the highest ESR, resulting in the poorest AC response.  
Unfortunately, large value ceramic capacitors are com-  
paratively expensive. One option is to parallel a 0.1µF  
ceramic capacitor with a 10µF Aluminum Electrolytic.  
The benefit is low ESR, high capacitance, and low over-  
all cost.  
A second capacitor is recommended between the input  
and ground to stabilize Vin. The input capacitor should  
be at least 0.1µF to have a beneficial effect.  
8
Analog Microelectronics, Inc.  
AME8806 / 8809 / 8842  
600mA CMOS LDO  
Load Step ( 1mA-600mA)  
Ground Current vs. Input Voltage  
45  
40  
35  
30  
25  
20  
15  
10  
5
85O  
C
25O  
C
0
0
0
1
2
3
4
5
6
7
8
TIME ( 20mS/DIV)  
Input Voltage (V)  
Drop Out Voltage vs. Output Voltage  
Power Supply Rejection Ratio  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
0.3  
0.25  
0.2  
0.15  
0.1  
0.05  
0
100mA  
C L=2.2  
µ
F Tantalum  
BYP=0  
IL O A D=600mA  
C
10mA  
100mA  
1mA  
µ
100 A  
µ
100 A  
1.0E+01  
1.0E+03  
1.0E+05  
1.0E+07  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
Output Voltage (V)  
Frequency (Hz)  
Power Supply Rejection Ratio  
Safe Operating Area  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
600  
100mA  
1mA  
CL=2.2  
µF Tantalum  
C
BYP=1000pF  
100mA  
100  
10mA  
100µA  
100µA  
10  
1.0  
8.0  
0.1  
1.0E+01  
1.0E+03  
1.0E+05  
1.0E+07  
Input-Output Voltage Differential (V)  
Frequency (Hz)  
9
Analog Microelectronics, Inc.  
600mA CMOS LDO  
AME8806 / 8809 / 8842  
Noise Measurement  
Overtemperature Shutdown  
CL = 2.2µF  
NO FILTER  
0
0
RL O A D =6.6  
TIME (0.5Sec/DIV)  
TIME (20mS/DIV)  
Current Limit Response  
Short Circuit Response  
CLOAD=2.2  
CIN=1  
RLOAD<100m  
µF  
F
µ
CL O A D =2.2  
IN=1.0  
L O A D =3.3  
VO U T N O M =3.3V  
µF  
C
µF  
R
TIME (2mS/DIV)  
TIME (2mS/DIV)  
Line Transient Response  
Chip Enable Transient Response  
CL=2  
µF  
RL=10  
CL O A D =2.2µF  
0
0
I
V
V
L O A D =1mA  
O U T D C =3.3V  
INDC=4.5V  
TIME (200mS/DIV)  
TIME ( 1mS/DIV)  
10  
Analog Microelectronics, Inc.  
AME8806 / 8809 / 8842  
600mA CMOS LDO  
n Package Dimension  
SO-8  
MILLIMETERS  
INCHES  
MIN  
SYMBOLS  
A
MIN  
1.35  
0.10  
MAX  
1.75  
0.25  
MAX  
0.069  
0.010  
0.053  
0.004  
A
1
A2  
B
C
D
E
e
0.33  
0.19  
4.80  
3.80  
0.51  
0.25  
5.00  
4.00  
0.013  
0.007  
0.189  
0.150  
0.020  
0.010  
0.1970  
0.157  
θ
H
L
y
5.80  
0.40  
0°  
6.20  
1.27  
0.10  
8°  
0.228  
0.016  
0.244  
0.050  
0.004  
8°  
0°  
θ
11  
www.analogmicro.com  
E-Mail: info@analogmicro.com  
Life Support Policy:  
These products of Analog Microelectronics, Inc. are not authorized for use as critical components in life-  
support devices or systems, without the express written approval of the president  
of Analog Microelectronics, Inc.  
Analog Microelectronics, Inc. reserves the right to make changes in the circuitry and specifications of its  
devices and advises its customers to obtain the latest version of relevant information.  
Analog Microelectronics, Inc., August 2001  
Document: 2006-DS8806/8809-D  
Corporate Headquarters  
Asia Pacific Headquarters  
AME, Inc.  
2F, 187 Kang-Chien Road, Nei-Hu District  
Taipei 114, Taiwan, R.O.C.  
Tel : 886 2 2627-8687  
Analog Microelectronics, Inc.  
3100 De La Cruz Blvd. Suite 201  
Santa Clara, CA. 95054-2046  
Tel : (408) 988-2388  
Fax: (408) 988-2489  
Fax: 886 2 2659-2989  

相关型号:

AME8806IEHAZ

600mA CMOS LDO
AME

AME8806JEHA

600mA CMOS LDO
AME

AME8806JEHAZ

600mA CMOS LDO
AME

AME8806KEHA

600mA CMOS LDO
AME

AME8806KEHAZ

600mA CMOS LDO
AME

AME8806LEHA

600mA CMOS LDO
AME

AME8806LEHAZ

600mA CMOS LDO
AME

AME8806MEHA

600mA CMOS LDO
AME

AME8806MEHAZ

600mA CMOS LDO
AME

AME8806NEHA

600mA CMOS LDO
AME

AME8806NEHAZ

600mA CMOS LDO
AME

AME8806OEHA

600mA CMOS LDO
AME