AME8831BEEV330Y [AME]
150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application; 150毫安的Hi- PSRR ，低静态LDO与涌入电流控制对于USB应用
| 型号： | AME8831BEEV330Y |
| 厂家： | 
ANALOG MICROELECTRONICS |
| 描述： | 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application |
| 文件： | 总15页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
nGeneral Description
nApplications
The AME8831 family of positive, linear regulators fea-
ture low quiescent current (17mA typ.) with low dropout
voltage, making them ideal for battery applications. The
space-saving SOT-25 package is attractive for “Pocket”
l Instrumentation
l Portable Electronics
l Wireless Devices
l Cordless Phones
l PC Peripherals
and “Hand Held”applications.
These rugged devices have both Thermal Shutdown,
and Current limitation to prevent device failure under the
“Worst” of operating conditions. In applications requires
a low noise regulated supply. The AME8831 family uses
the SR pin to program the output voltage’ s slew rate to
control the in-rush current. This is specifically used in
the USB application where large load capacitance is
l Battery Powered Widgets
l Electronic Scales
nFunction Block Diagram
VOUT
VIN
present at start-up.
* ENB or EN
10 k
Current Limit
The AME8831 also features a logic-enabled sleep mode
to shutdown the regulator, reducing quiescent current to
1mA typical at TA= 25oC.
R1
/ Thermal
Protection
AMP
Vref
GND
The AME8831 is stable with an output capacitance of
4.7mF or larger.
R2
SR
* AME8831A: ENB, AME8831B: EN
nFeatures
nTypical Application
l Guaranteed 150mA Output
l Dropout Voltage Typically 150 mV at 150 mA
l 17mA Quiescent Current
VIN
IN
SR
AME8831A
l Over-Temperature Shutdown
l Over-Current Limitation
1mF
OUT
ENB
GND
0.01mF
+
4.7mF
l Noise Reduction Bypass Capacitor
l Power-Saving Shutdown Mode
l Space-Saving SOT-25 Package
l Factory Pre-set Output Voltages
l Enable pin option
VIN
IN
SR
l ENB active low enable
AME8831B
l EN active high enable
1mF
OUT
EN
GND
0.01mF
lAll AME's Lead Free Products Meet RoHS
Standards
+
4.7mF
Rev.H.05
1
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
nPin Configuration
SOT-25
SOT-25
Top View
Top View
AME8831A
1. IN
AME8831B
1. IN
5
4
5
4
2. GND
3. ENB
4. SR
2. GND
3. EN
AME8831
AME8831
4. SR
5. OUT
5. OUT
1
2
3
1
2
3
* Die Attach:
* Die Attach:
Conductive Epoxy
Conductive Epoxy
nPin Description
Pin Number
Pin Name
Pin Description
Input voltage pin.
It should be decoupled with 1mF or greater capacitor.
1
2
IN
GND
Ground connection pin.
Enable pin.
EN
When pulled low, the PMOS pass transistor turns off, current
consuming less than 1µA.
3
Enable bar pin.
ENB
SR
When pulled high, the PMOS pass transistor turns off, current
consuming less than 1µA.
The SR(Slew Rate) terminal is used to control the VOUT in-rush
current.
4
5
LDO voltage regulator output pin.
It should be decoupled with a 1µF or greater value low ESR
ceramic capacitor.
OUT
2
Rev.H.05
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
nOrdering Information
AME8831 x x x x xxx x
Special Feature
Voltage
Number of Pins
Package Type
Operating Ambient Temperature Range
Pin Configuration
Operating Ambient
Number
of
Pins
Pin
Output
Voltage
Temperature
Range
Package Type
Special Feature
Configuration
-40OC to +85OC
A: 1. IN
(SOT-25) 2. GND
3. ENB
E:
E: SOT-2X
V: 5
180: V=1.8V
250: V=2.5V
285: V=2.85V
300: V=3.0V
330: V=3.3V
Y: Lead free & Low profile
Z: Lead free
4. SR
5. OUT
B: 1. IN
(SOT-25) 2. GND
3. EN
4. SR
5. OUT
Rev.H.05
3
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
nOrdering Information
Operating Ambient
Temperature Range
Part Number
Marking* Output Voltage Package
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
- 40oC to +85oC
AME8831AEEV180Z
AME8831AEEV180Y
AME8831AEEV250Z
AME8831AEEV250Y
AME8831AEEV285Z
AME8831AEEV285Y
AME8831AEEV300Z
AME8831AEEV300Y
AME8831AEEV330Z
AME8831AEEV330Y
AME8831BEEV180Z
AME8831BEEV180Y
AME8831BEEV250Z
AME8831BEEV250Y
AME8831BEEV285Z
AME8831BEEV285Y
AME8831BEEV300Z
AME8831BEEV300Y
AME8831BEEV330Z
AME8831BEEV330Y
BIKww
BIKww
BILww
1.8V
1.8V
2.5V
2.5V
2.85V
2.85V
3.0V
3.0V
3.3V
3.3V
1.8V
1.8V
2.5V
2.5V
2.85V
2.85V
3.0V
3.0V
3.3V
3.3V
SOT-25
TSOT-25
SOT-25
TSOT-25
SOT-25
TSOT-25
SOT-25
TSOT-25
SOT-25
TSOT-25
SOT-25
TSOT-25
SOT-25
TSOT-25
SOT-25
TSOT-25
SOT-25
TSOT-25
SOT-25
TSOT-25
BILww
BIHww
BIHww
BIMww
BIMww
BDVww
BDVww
BEYww
BEYww
BFJww
BFJww
BEZww
BEZww
BFAww
BFAww
BFBww
BFBww
Note: ww represents the date code and pls refer to the Date Code Rule before Package Dimension.
* A line on top of the first character represents lead free plating such as BDVww.
Please consult AME sales office or authorized Rep./Distributor for output voltage and package type availability.
4
Rev.H.05
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
nAbsolute Maximum Ratings
Parameter
Input Voltage
Maximum
Unit
V
6
Output Current
PD / (VIN - VOUT
)
mA
V
Output Voltage
GND-0.3 to VIN+0.3
C*
ESD Classification
Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device
*HBM C: 4000V+
nRecommended Operating Conditions
Parameter
Symbol
Rating
- 40 to +85
- 40 to +125
-65 to +150
Unit
Ambient Temperature Range
Junction Temperature Range
Storage Temperature Range
TA
TJ
oC
TSTG
nThermal Information
Parameter
Package
Die Attach
Symbol
Maximum
Unit
Thermal Resistance*
(Junction to Case)
qJC
81
oC / W
Thermal Resistance
(Junction to Ambient)
SOT-25
Conductive Epoxy
qJA
260
400
Internal Power Dissipation
PD
mW
oC
oC
Maximum Junction Temperature
Solder Iron (10 Sec)**
150
350
* Measure qJC on center of molding compound if IC has no tab.
** MIL-STD-202G 210F
Rev.H.05
5
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
nElectrical Specifications
Over operating temperature range(T =-40oC to +125oC), VIN=VOUT(nom) + 1V, or VIN=VIN(Min) whichever is greater,
J
IOUT=1mA, VEN=VIN(VENB=0), and COUT=4.7uF, C =1uF unless otherwise noted. Typical values are at TA=25oC.
IN
Test Condition
Parameter
Input Voltage
Symbol
Min
Note1
-1.5
-3
Typ Max
Units
VIN
5.5
1.5
3
V
TA=25oC
Output Voltage Accuracy
VOUT(nom)
%
TJ= -40oC to +125oC
TA=25oC
-0.30
0.2
0.3
0.4
VOUT=1.8,
TJ= -40oC to +125oC -0.40
TA=25oC
TJ= -40oC to +125oC -0.35
TA=25oC
-0.25 0.15 0.25
TJ= -40oC to +125oC -0.35
0.35
TA=25oC
-0.25 0.15 0.25
TJ= -40oC to +125oC -0.35
TA=25oC
-0.2
TJ= -40oC to +125oC -0.3
2.5V<VIN<5.5V
VOUT=2.5,
-0.25 0.15 0.25
0.35
Line Regulation
3V<V <5.5V
IN
DV
OUT *%
V OUT
VOUT=2.85,
REGLINE
%/V
3.3V<VIN<5.5V
DV IN
VOUT=3.0,
3.5V<VIN<5.5V
0.35
0.2
0.1
VOUT=3.3,
3.8V<VIN<5.5V
0.3
Output Current
IOUT
ILIM
(See Note2)
VOUT=0V
150
200
mA
mA
Output Current Limit
350
17
750
25
TA=25oC
10mA<IOUT<150mA
10mA<IOUT<150mA
Quiescent Current
IQ
mA
TJ = -40oC to +125oC
30
Load Regulation =
DVOUT
*%
REGLOAD 10mA<=IOUT<=150mA
TA=25oC
-0.1 0.0025 0.1
%/mA
V OUT
DI(mA)
Note1 : VIN(min) = VOUT + VDROPOUT(max)
Note2 : Continuous output current and operating junction temperature are limited by internal protection circuitry,
but it is not recommended that the device operate under conditions beyond those specified in this table for
extended periods of time.
6
Rev.H.05
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
nElectrical Specifications (contd.)
Test Condition
Parameter
Symbol
Min
Typ Max
Units
T =25oC
800
450
350
250
150
850
900
500
550
400
450
350
400
250
300
VOUT(nom)=1.8V
IOUT=150mA
A
TJ=-40oC to +125oC
T =25oC
VOUT(nom)=2.5V
IOUT=150mA
A
TJ=-40oC to +125oC
T =25oC
Dropout Voltage @ VOUT
=
VOUT(nom)=2.85V
IOUT=150mA
A
VDO
mV
TJ=-40oC to +125oC
VOUT(nom)-2%VOUT(nom)
T =25oC
VOUT(nom)=3V
IOUT=150mA
A
TJ=-40oC to +125oC
T =25oC
VOUT(nom)=3.3V
IOUT=150mA
A
TJ=-40oC to +125oC
Over Temerature Shutdown
Over Temerature Hysterisis
VOUT Temperature Coefficient
OTS
OTH
TC
Thermal shutdown increasing
150
20
oC
30
ppm
VOUT=3.3V, f=1 kHz,
IOUT = 100mA
COUT=10mF
Power Supply Ripple
Rejection
PSRR
T =25oC
65
dB
A
C(SR)=0.01mF
BW=200Hz to 100kHz
IOUT=150mA
T =25oC
100
mVRMS
Output Voltage Noise
eN
A
COUT=10mF,
C(SR)=0.47mF
VENBH
1.4
0
VIN
0.3
VENH
ENB and EN Input Threshold
VIN=2.5V to 5.5V
V
VENBL
VENL
IEN
EN or ENB Input Bias Current
Shutdown Current
ENB=0, EN=VIN VIN=2.5V to 5.5V
0.1
1
2
mA
mA
ISD
ENB=VIN, EN=0 VIN=2.5V to 5.5V
1
CSR=0.01mF
20
V
OUT=3.3V
RLOAD=22W
COUT=10mF
Start up Time
TSTR
CSR=0.1mF
TA=25oC
200
450
ms
CSR=0.22mF
Rev.H.05
7
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
nDetail Description
The AME8831 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error ampli-
fier, over-current protection, and thermal shutdown func-
tion.
The P-channel pass transistor receives data from
the error amplifier, over-current limit, and thermal pro-
tection circuits. During normal operation, the error
amplifier compares the output voltage to a precision
reference. Over-current and Thermal shutdown circuits
become active when the junction temperature exceeds
150oC, or the current exceeds about 350mA. During
thermal shutdown, the output voltage remains low.
Normal operation is restored when the junction tem-
perature drops below 120oC.
The AME8831 switches from voltage mode to cur-
rent mode when the load exceeds the rated output
current. This prevents over-stress.
nExternal Capacitors
The AME8831 is stable with an output capacitor to
ground of 4.7mF or greater. Ceramic capacitors have
the lower ESR, and will offer the best AC performance.
Conversely, Aluminum Electrolytic capacitors exhibit
the higher ESR, resulting in the poor AC response.
Unfortunately, large value ceramic capacitors are com-
paratively expensive. One option is to parallel a 0.1mF
ceramic capacitor with a 10mF Aluminum Electrolytic.
The benefit is low ESR, high capacitance, and low overall
cost.
A second capacitor is recommended between the
input and ground to stabilize VIN. The input capacitor
should be at least 0.1mF to have a beneficial effect. All
capacitors should be placed in close proximity to the
pins. A “Quiet” ground termination is desirable. This
can be achieved with a “Star”connection
nEnable
The Enable pin is optional. EN for active high en-
able, ENB for active low enable. When disable the
Enable Pin EN=0, ENB=VIN, the PMOS pass transis-
tor shuts off, and all internal circuits are powered down.
In this state, the standby current is less than 1mA.
8
Rev.H.05
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
Output Noise Spectral Density
Output Voltage vs Load Current
10
3.26
3.25
3.24
3.23
VIN=4.3V
COUT=4.7mF
C(SR)=0.47mF
VIN=4.3V
TJ=25℃
IO =150mA
1
3.22
3.21
3.2
IO=1mA
0.1
100
3.19
0
15
30
45
60
75
90
105 120 135 150
1000
10000
100000
Frequency (Hz)
Load Current (mA)
Output Impedance vs Frequency
Quiescent Current vs Temperature
2.0
30
25
20
VIN=4.3V
CO=4.7mF
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
IO=1mA
IO=150mA
15
10
5
IO =50mA
IO=150mA
0
-40
-20
-5
25
55
85
125
100
1000
10000
100000
1000000
Frequency (Hz)
Temperature (oC)
Dropout Voltage vs. Temperature
Ripple Rejection vs Frequency
120
100
80
60
40
20
0
300
VIN=4.3V
VOUT=3.3V
COUT=10mF
VIN=4.3V
250
200
150
100
IO=1mA
C(SR)=0.47mF
IO=150mA
IO=150mA
50
0
-40
-20
25
85
125
100
1000
10000
100000
1000000
Temperature (oC)
Frequency (Hz)
Rev.H.05
9
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
VOUT vs Temperature
Line Transient Response
3.28
IOUT=1mA
3.26
5.3
4.3
3.24
IOUT=150mA
3.22
3.20
VIN=4.3V
3.18
-40
-20
25
55
85
125
Time (20mS/Div)
Temperature (oC)
Output Voltage, Enable Voltage vs Time
(Start-Up)
Output Voltage, Enable Voltage vs Time
(Start-Up)
5
0
5
0
C(SR) =0.01mF
C(SR)=0.1mF
3
2
3
2
VIN =4.3V
VOUT=3.3V
IO =150mA
CO=10mF
TJ=25oC
VIN =4.3V
VOUT=3.3V
IO=150mA
C(SR)=0.22mF
CO =10mF
1
0
1
0
TJ=25oC
Time (10mS/Div)
Time (10mS/Div)
Stability vs ESR vs ILOAD
Load Transient Response
100
200
VIN=4.3V
VOUT=3.3V
CL=1mF
100
0
Unstable Region
10
0
Stable Region
-50
VIN=4.3V
VOUT =3.3V
CO=10mF
TJ=25oC
1
Untested Region
0.1
Time (20mS/Div)
0
60
90
120
150
ILOAD (mA)
10
Rev.H.05
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
Stability vs ESR vs ILOAD
100
VIN=4.3V
VOUT=3.3V
CL=10mF
Unstable Region
10
Stable Region
1
Untested Region
0.1
0
60
90
120
150
ILOAD (mA)
Rev.H.05
11
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
nDate Code Rule
Marking
Date Code
Year
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
xxx0
xxx1
xxx2
xxx3
xxx4
xxx5
xxx6
xxx7
xxx8
xxx9
nTape and Reel Dimension
SOT-25
P
W
AME
AME
PIN 1
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
SOT-25
8.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
12
Rev.H.05
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
nTape and Reel Dimension
TSOT-25
P
W
AME
AME
PIN 1
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
8.0±0.1 mm
Pitch (P)
4.0±0.1 mm
Part Per Full Reel
3000pcs
Reel Size
TSOT-25
180±1 mm
Rev.H.05
13
AME
150mA Hi-PSRR, Low-Quiescent LDO
with In-Rush Current Control
For USB Application
AME8831
nPackage Dimension
SOT-25
Top View
Side View
MILLIMETERS
INCHES
MIN MAX
SYMBOLS
D
MIN
MAX
1.20REF
0.0472REF
A
A1
b
0.00
0.30
2.70
1.40
0.15
0.55
3.10
1.80
0.0000 0.0059
0.0118 0.0217
0.1063 0.1220
D
E
e
0.0551 0.0709
0.07480 BSC
1.90 BSC
θ1
S1
e
H
L
2.60
3.00
0.10236 0.11811
0.0146BSC
0.37BSC
0o
10o
0o
10o
Front View
q1
0.95BSC
0.0374BSC
S1
b
TSOT-25
Top View
Side View
MILLIMETERS
INCHES
D
SYMBOLS
MIN
0.90
0.30
0.09
2.70
1.40
MAX
1.25
0.50
0.25
3.10
1.80
MIN
MAX
A+A1
0.0354 0.0492
0.0118 0.0197
0.0035 0.0098
0.1063 0.1220
0.0551 0.0709
0.07480 BSC
b
c
D
E
e
θ1
S1
e
1.90 BSC
H
L
2.40
3.00
0.09449 0.11811
0.0138BSC
0.35BSC
Front View
0o
10o
0o
10o
q1
0.95BSC
0.0374BSC
S1
b
14
Rev.H.05
www.ame.com.tw
E-Mail: sales@ame.com.tw
Life Support Policy:
These products of AME, Inc. are not authorized for use as critical components in life-support
devices or systems, without the express written approval of the president
of AME, Inc.
AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and
advises its customers to obtain the latest version of relevant information.
ã AME, Inc. , November 2008
Document: 1009-DS8831-H.05
Corporate Headquarter
AME, Inc.
2F, 302 Rui-Guang Road, Nei-Hu District
Taipei 114, Taiwan.
Tel: 886 2 2627-8687
Fax: 886 2 2659-2989
相关型号：
AME8831BEEV330Z
150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application
AKM
AME8831BEEV330Z
150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application
AME
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