AME8844AEQ150 [AME]
750mA CMOS LDO; 750毫安CMOS LDO
| 型号： | AME8844AEQ150 |
| 厂家： | 
ANALOG MICROELECTRONICS |
| 描述： | 750mA CMOS LDO |
| 文件： | 总14页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AME, Inc.
750mA CMOS LDO
AME8844
n General Description
n Functional Block Diagram
(Fixed Versions)
The AME8844 family of positive, linear regulators fea-
ture low quiescent current (45µA typ.) with low dropout
voltage, making them ideal for battery applications.
OUT
IN
Overcurrent
Shutdown
Output voltages are set at the factory and trimmed to
1.5% accuracy.
Thermal
Shutdown
These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under the
"Worst" of operating conditions.
EN
R1
V
x115%
ref
AMP
An additional feature is a “Power Good” detector, which
PG
pulls low when the output is out of regulation.
The AME8844 is stable with an output capacitance of
4.7µF or greater.
R2
V
ref
x85%
V
ref
GND
n Features
l Very Low Dropout Voltage
l Guaranteed 750mA Output
l Accurate to within 1.5%
n Functional Block Diagram
(Adjustable Version)
IN
OUT
l 45µA Quiescent Current Typically
l Over-Temperature Shutdown
l Current Limiting
Overcurrent
Shutdown
Thermal
Shutdown
l Short Circuit Current Fold-back
l Noise Reduction Bypass Capacitor (Fixed
Versions)
R1
(external)
AMP
EN
l Power-Saving Shutdown Mode
l Space-Saving MSOP-8 Package
l 6 Factory Pre-set Output Voltages
l Low Temperature Coefficient
l Adjustable Version
ADJ
1.242V
R2
(external)
GND
OUT
n Typical Applications
l Power Good Output Function.
IN
IN
OUT
n Applications
AME8844
GND
EN
PG
l Instrumentation
C1
C3
l Portable Electronics
l Wireless Devices
l PC Peripherals
5V
4.7µF
1µF
l Battery Powered Widgets
1
AME, Inc.
750mA CMOS LDO
AME8844
n Pin Configuration
MSOP-8
MSOP-8
Top View
Top View
7
6
5
7
6
5
8
8
AME 8844AEQAxxx
1. EN
AME 8844BEQAADJ
1. EN
2. VIN
2. VIN
3. PG
3. ADJ
8844
Xyww
8844
Byww
4. VOUT
4. VOUT
5. GND
6. GND
7. GND
8. GND
5. GND
6. GND
7. GND
8. GND
2
3
4
2
3
4
1
1
Note:
X: represents the regulator output voltage.
yww: represents the date code.
Please contact AME for details.
n Ordering Information
AME8844 AEQA xxx
AME8844 BEQA ADJ
Voltage
150: V=1.5V
180: V=1.8V
250: V=2.5V
330: V=3.3V
Voltage
ADJ: Adjustable
Pin Out Types
[Package Type]
Q:MSOP-8
[Pin Count]
A:8
Pin Out Types
[Package Type]
Q:MSOP-8
[Pin Count]
A:8
Operating
Operating
Temperature
Temperature
E:-40oC to 85oC
E:-40oC to 85oC
2
AME, Inc.
750mA CMOS LDO
AME8844
n Ordering Information (contd.)
Part Number
Marking
Output Voltage Package Operating Temp. Range
8844
Lyww
- 40oC to + 85oC
- 40oC to + 85oC
- 40oC to + 85oC
- 40oC to + 85oC
- 40oC to + 85oC
AME8844AEQA150
1.50
1.80
2.50
3.30
ADJ
MSOP-8
MSOP-8
MSOP-8
MSOP-8
MSOP-8
8844
Myww
AME8844AEQA180
AME8844AEQA250
AME8844AEQA330
AME8844BEQAADJ
8844
Dyww
8844
Ayww
8844
Byww
Note: ww represents the date code
Please consult AME sales office or authorized Rep./Distributor for other output voltage and package type availability.
3
AME, Inc.
750mA CMOS LDO
AME8844
n Absolute Maximum Ratings
Parameter
Input Voltage
Maximum
Unit
V
8
Output Current
mA
PD / (VIN - VO)
GND - 0.3 to VIN + 0.3
B
Output Voltage
V
ESD Classification
Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device
n Recommended Operating Conditions
Parameter
Ambient Temperature Range
Junction Temperature
Rating
- 40 to + 85
- 40 to + 125
Unit
oC
oC
n Thermal Information
Parameter
Maximum
Unit
oC / W
Thermal Resistance (
θjc
)
MSOP-8
MSOP-8
80
Internal Power Dissipation (PD)
W
( T = 100oC)*
∆
oC
oC
Maximum Junction Temperature
150
300
Maximum Lead Temperature (10 Sec)
* Assuming a heat sink capable of twice times (θjc)
** Estimated
4
AME, Inc.
750mA CMOS LDO
AME8844
n Electrical Specifications
VIN = VO(NOM) +2V, VEN = VIN, TA = 25OC unless otherwise noted
Test Condition
Parameter
Input Voltage
Symbol
Min Typ Max
Units
VIN
VO
Note 1
-1.5
7
V
Output Voltage Accuracy
IO=1mA
1.5
%
VO(NOM)=1.5V
O(NOM)=1.8V
O(NOM)>=2.0V
1000
650
500
IO=750mA
VO=VONOM -2.0%
See
chart
Dropout Voltage
VDROPOUT
mV
V
V
Output Current
IO
ILIM
ISC
IQ
VO>1.2V
VO>1.2V
750
750
mA
mA
mA
Current Limit
Short Circuit Current
Quiescent Current
Ground Pin Current
VIN=VO(NOM) +1V, VO < 0.4V
IO=0mA
750
45
70
A
µ
IGND
IO=1mA to 750mA
45
A
µ
VO < 2.0V
IO=1mA
-0.15
0.15
%
%
Line Regulation
REGLINE
4.0 > VO >= 2.0V
-0.1 0.02 0.1
VIN=VO+1 to VO+2
4.0V <= VO
IO=1mA to 750mA
-0.4
-1
0.4
1
%
Load Regulation
REGLOAD
OTS
OTH
TC
0.2
150
30
30
1
%
oC
oC
Over Temerature Shutdown
Over Temerature Hysterisis
VO Temperature Coefficient
ADJ Input Bias Current
Minimum Load Current
ADJ Reference Voltage
ppm/oC
A
µ
IADJ
Vin = 2.5V
70
A
µ
Iload
VREF
1.221 1.240 1.26
V
f=1kHz
f=10kHz
f=100kHz
75
55
30
IO=100mA
Power Supply Rejection
PSRR
dB
C =4.7 F ceramic
µ
O
f=10Hz to 100kHz
IO=10mA
Output Voltage Noise
EN Input Threshold
EN Input Bias Current
eN
Co=4.7 F
30
Vrms
µ
µ
VEH
VEL
IEH
VIN=2.7V to 7V
2.0
0
Vin
0.4
1
V
V
VIN=2.7V to 7V
V
EN=VIN, VIN=2.7V to 7V
A
µ
A
µ
IEL
VEN=0V, VIN=2.7V to 7V
VIN=5V, VO=0V, VEN<VEL
PG goes Low when VOUT too Low
PG goes Low when VOUT too High
VPG=7V
1
Shutdown Supply Current
Output Under Voltage
Output Over Voltage
PG Leakage Current
PG Voltage Low
ISD
0.5
2
A
µ
VUV
VOV
ILC
84 %VO(NOM)
%VO(NOM)
105
1
A
µ
ISINK=0.25mA
VOL
0.4
V
Note1:VIN(min)=VOUT+VDROPOUT
5
AME, Inc.
750mA CMOS LDO
AME8844
n Detailed Description
n Enable
The AME8844 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error amplifier,
over-current protection, and thermal shutdown.
When EN pin is pulled low, the PMOS pass transistor
shuts off, and all internal circuits are powered down. In
this state, the quiescent current is less than 2µA. This
pin behaves much like an electronic switch.
The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal pro-
tection circuits. During normal operation, the error am-
plifier compares the output voltage to a precision refer-
ence. Over-current and Thermal shutdown circuits be-
come active when the junction temperature exceeds
140oC, or the current exceeds 2.2A. During thermal shut-
down, the output voltage remains low. Normal operation
is restored when the junction temperature drops below
120oC.
100K Ohm resistor is necessary between VEN source
and EN pin when VEN is higher than VIN.
(Note: There is no internal pull-up for EN pin.
It can not be floating)
n Adjustable Version
The adjustable version uses external feedback resis-
tors to generate an output voltage anywhere from 1.5V to
5.0V. Vadj is trimmed to 1.24V and VOUT is given by the
equation:
The AME8844 behaves like a current source when the
load reaches 2.2A. However, if the load impedance drops
below 0.3 ohms, the current drops back to 600mA to
prevent excessive power dissipation. Normal operation
is restored when the load resistance exceeds 0.75 ohms.
VOUT = Vadj ( 1 + R1 / R2 )
n External Capacitors
Feedback resistors R1 and R2 should be high enough
to keep quiescent current low, but increasing R1 + R2
will reduce stability. In general, R1 and R2 in the 10’s of
kΩ will produce adequate stability, given reasonable lay-
out precautions. To improve stability characteristics, keep
parasitics on the ADJ pin to a minimum, and lower R1
and R2 values.
The AME8844 is stable with an output capacitor to
ground of 4.7µF or greater. Ceramic capacitors have the
lowest ESR, and will offer the best AC performance. Con-
versely, Aluminum Electrolytic capacitors exhibit the high-
est ESR, resulting in the poorest AC response. Unfortu-
nately, large value ceramic capacitors are comparatively
expensive. One option is to parallel a 0.1µF ceramic
capacitor with a 10µF Aluminum Electrolytic. The benefit
is low ESR, high capacitance, and low overall cost.
n Power Good
The AME8844 includes the Power Good feature. When
the output is not within ±15% of the specified voltage, it
pulls low. This can occur under the following conditions:
A second capacitor is recommended between the in-
put and ground to stabilize Vin. The input capacitor should
be at least 0.1µF to have a beneficial effect.
All capacitors should be placed in close proximity to
the pins. A "Quiet" ground termination is desirable. This
can be achieved with a "Star" connection.
1) Input Voltage too low.
2) During Over-Temperature.
3) During Over-Current.
4) If output is pulled up.
(Note: PG pin is an open-drain output.)
6
AME, Inc.
750mA CMOS LDO
AME8844
Dropout Voltage VS ILOAD
Dropout Voltage VS VOUT
1
1.2
1
ILO AD =1.5A
VO U T=1.5
0.8
1.8
2.0
0.8
0.6
0.6
0.4
0.2
ILO AD =1.0A
2.1
2.8
0.4
0.2
ILO AD =0.5A
3.3
0
0
0
0
2
4
6
8
0.3
0.6
0.9
1.2
1.5
1.8
VOUT (V)
ILOAD (A)
Quiescent Current vs. Temperature
Ground Current vs. VIN
50
41
39
45
40
35
30
25
20
15
10
37
35
33
31
IOUT = 140mA
OUT = 1.5V
V
29
27
25
2
3
4
5
6
7
8
-45
-5
25
55
85
115
VIN (V)
Temperature (oC)
Ground Current vs. Load Current
VOUT vs. Temperature(2.5V)
38.5
38
2.500
2.495
37.5
37
VIN = 2.5V
2.490
2.485
V
OUT = 1.5V
36.5
36
35.5
35
2.480
2.475
34.5
-45
-5
25
55
85
115
0
0.25
0.5
0.75
1
1.25
1.5
Load Current (mA)
Temperature (oC)
7
AME, Inc.
750mA CMOS LDO
AME8844
Load Regulation vs. Temperature
Dropout Voltage vs. Load Current(2.5V)
400
0.30
0.25
0.20
0.15
0.10
115 oC
85 oC
55 oC
25 oC
-5 oC
-45 oC
350
300
250
200
150
100
50
0.05
0.00
0
-45
-5
25
55
85
115
0.3
0.6
0.9
1.2
1.5
Temperature (oC)
Load Current (A)
AME8844BEQA VADJ vs. Temperature
Line Transient Response
1.244
1.243
1.242
1.241
1.240
CIN = 4.7
CO U T = 4.7
TR = TF = 1µS
µF
µF
1.239
1.238
VOUT = 1.5V
1.237
1.236
0
1.235
-45
-5
25
55
85
115
Temperature (oC)
Time (20mS/DIV)
Load Step 40mA to 1.5A
Current Limit Response
VIN = 5V
CIN = 4.7
CO U T = 4.7
µ
µ
F
F
0
CIN = 4.7µF
0V
0A
CO U T = 4.7
VIN = 4.0V
µF
ILIM
VO U T = 1.8V
ISC
Time 1mS/DIV
µ
Time 500 S/DIV
8
AME, Inc.
750mA CMOS LDO
AME8844
Current Limit vs. VIN
Short Circuit Current vs. VIN
1.6
1.4
1.2
3
2.8
µ
F
CIN = 4.7
µ
F
CIN = 4.7
2.6
2.4
2.2
µ
F
CO U T = 4.7
µ
F
CO U T = 4.7
VO U T = 1.8V
1
2
0.8
0.6
1.8
1.6
1.4
1.2
0.4
0.2
0
1
2
3
4
5
6
7
8
2
3
4
5
6
7
8
VIN (V)
VIN (V)
Overtemperature Shutdown
Stability vs. ESR vs. ILoad
10000
1000
100
10
Unstable Region
µ
F
CL=5
0A
0V
VIN = 4V
CIN = 4.7
CO U T = 4.7µ
µF
F
1
Stable Region
0.1
Untested Region
0.01
0
250
500
750
1000
1250
1500
ILOAD (mA)
Time 100mS/DIV
Stability vs. ESR vs. ILoad
Stability vs. ESR vs. ILoad
10000
1000
100
10
10000
1000
Unstable Region
Unstable Region
µ
F
CL=2
100
10
1
µ
CL=10
F
1
Stable Region
Stable Region
0.1
0.1
0.01
Untested Region
Untested Region
0.001
0.01
0
250
500
750
1000
1250
1500
0
250
500
750
1000
1250
1500
ILOAD (mA)
ILOAD (mA)
9
AME, Inc.
750mA CMOS LDO
AME8844
n External Resistor Divider Table
R1
(K Ohm)
1
2
5
10
20
R2(kohm)=(1.24*R1(kohm))/(Vout-1.24)
Vout
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
2.25
2.30
2.35
2.40
2.45
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
3.00
3.05
3.10
20.67
11.27
7.75
5.90
4.77
4.00
3.44
3.02
2.70
2.43
2.21
2.03
1.88
1.75
1.63
1.53
1.44
1.36
1.29
1.23
1.17
1.12
1.07
1.02
0.98
0.95
0.91
0.88
0.85
0.82
0.79
0.77
0.75
0.73
0.70
0.69
0.67
41.33
22.55
15.50
11.81
9.54
8.00
6.89
6.05
5.39
4.86
4.43
4.07
3.76
3.49
3.26
3.06
2.88
2.73
2.58
2.46
2.34
2.23
2.14
2.05
1.97
1.89
1.82
1.76
1.70
1.64
1.59
1.54
1.49
1.45
1.41
1.37
1.33
103.33
56.36
38.75
29.52
23.85
20.00
17.22
15.12
13.48
12.16
11.07
10.16
9.39
206.67
112.73
77.50
59.05
47.69
40.00
34.44
30.24
26.96
24.31
22.14
20.33
18.79
17.46
16.32
15.31
14.42
13.63
12.92
12.28
11.70
11.17
10.69
10.25
9.84
413.33
225.45
155.00
118.10
95.38
80.00
68.89
60.49
53.91
48.63
44.29
40.66
37.58
34.93
32.63
30.62
28.84
27.25
25.83
24.55
23.40
22.34
21.38
20.50
19.68
18.93
18.24
17.59
16.99
16.42
15.90
15.40
14.94
14.50
14.09
13.70
13.33
8.73
8.16
7.65
7.21
6.81
6.46
6.14
5.85
5.59
5.34
5.12
4.92
4.73
9.47
4.56
9.12
4.40
8.79
4.25
8.49
4.11
8.21
3.97
7.95
3.85
7.70
3.73
7.47
3.63
7.25
3.52
7.05
3.43
6.85
3.33
6.67
10
AME, Inc.
750mA CMOS LDO
AME8844
n External Resistor Divider Table (contd.)
R1
(K Ohm)
1
2
5
10
20
R2(kohm)=(1.242*R1(kohm))/(Vout-1.242)
Vout
3.15
3.20
3.25
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
3.75
3.80
3.85
3.90
3.95
4.00
4.05
4.10
4.15
4.20
4.25
4.30
4.35
4.40
4.45
4.50
4.55
4.60
4.65
4.70
4.75
4.80
4.85
4.90
4.95
5.00
0.65
0.63
0.62
0.60
0.59
0.57
0.56
0.55
0.54
0.53
0.51
0.50
0.49
0.48
0.48
0.47
0.46
0.45
0.44
0.43
0.43
0.42
0.41
0.41
0.40
0.39
0.39
0.38
0.37
0.37
0.36
0.36
0.35
0.35
0.34
0.34
0.33
0.33
1.30
1.27
1.23
1.20
1.18
1.15
1.12
1.10
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
0.92
0.90
0.88
0.87
0.85
0.84
0.82
0.81
0.80
0.78
0.77
0.76
0.75
0.74
0.73
0.72
0.71
0.70
0.69
0.68
0.67
0.66
3.25
3.16
3.08
3.01
2.94
2.87
2.81
2.74
2.68
2.63
2.57
2.52
2.47
2.42
2.38
2.33
2.29
2.25
2.21
2.17
2.13
2.09
2.06
2.03
1.99
1.96
1.93
1.90
1.87
1.85
1.82
1.79
1.77
1.74
1.72
1.69
1.67
1.65
6.49
6.33
6.17
6.02
5.88
5.74
5.61
5.49
5.37
5.25
5.15
5.04
4.94
4.84
4.75
4.66
4.58
4.49
4.41
4.34
4.26
4.19
4.12
4.05
3.99
3.92
3.86
3.80
3.75
3.69
3.64
3.58
3.53
3.48
3.43
3.39
3.34
3.30
12.98
12.65
12.34
12.04
11.75
11.48
11.22
10.97
10.74
10.51
10.29
10.08
9.88
9.69
9.50
9.32
9.15
8.99
8.83
8.67
8.52
8.38
8.24
8.10
7.97
7.85
7.73
7.61
7.49
7.38
7.27
7.17
7.07
6.97
6.87
6.78
6.68
6.60
Note: Small load(greater than 2 mA) is necessary as R1 or R2 is larger than 50 K Ohm. Otherwise, outputvoltage
probably cannot be pulled down to 0 V on disable mode.
11
AME, Inc.
750mA CMOS LDO
AME8844
n Package Dimension
MSOP-8
MILLIMETERS
INCHES
MIN
SYMBOLS
MIN
-
MAX
1.07
0.20
0.92
0.38
0.33
0.23
0.17
3.10
4.98
3.10
MAX
0.04197
0.008
0.036
0.015
0.013
0.009
0.006
0.122
0.196
0.122
A
A1
A2
b
-
Top View
DETAIL A
D
e1
0.05
0.81
0.28
0.28
0.13
0.13
2.90
4.77
2.90
0.002
0.032
0.011
0.011
0.005
0.005
0.114
0.188
0.114
TOP PKG.
b1
c
BTM PKG.
c£
E1
E
L2
L
c1
D
L1
E
PIN 1 I.D
(SHINNY SURFACE)
E1
e
0.65 TYP
1.95 TYP
0.406 0.686 0.01598 0.02701
0.94 REF
0.254 TYP
0o 8o
0.0255 TYP
0.0767 TYP
e1
L
R0.127(0.005) TYP
ALL CORNER
& EDGES
0.037 REF
0.010 TYP
L1
L2
è
Front View
0o
8o
A2
A1
A
NOTE:
e
1. Controlling dimension : Millimeter, converted inchdimension
are not necessarily exact.
b
2. Dimensiioning and tolerancing per ansi Y14.5m-1994.
3. Dimension "d" does not include mold flash,protrusion or gate
burr, mold flash,protrusion and gate burr shall not exceed
0.15mm(0.006") per side. Dimension e1 do not include inter-lead
flash or protrusion, inter-lead flash and protrusion shall not
exceed 0.15mm(0.006") per side.
4. The package top be smaller than the package bottom. Dimen-
sion d and e1 are determined at outermost extremes of the
plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
End View
SECTION B-B
b
BASE METAL
b1
B
c
c1
B
5. Dimension 'b' does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm(0.0031) total in excess of
the "b" dimension at maximum material condition.
E1
WITH PLATING
See Detail A
12
AME, Inc.
750mA CMOS LDO
AME8844
n Tape and Reel Diagram
PIN 1
W
P
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
12mm
Pitch (P)
9.1mm
Part Per Full Reel
4000
Reel Size
13in
MSOP-8L
13
www.ame.com.tw
E-Mail: sales@ame.com.tw
Life Support Policy:
These products of AME, Inc. are not authorized for use as critical components in life-support
devices or systems, without the express written approval of the president
of AME, Inc.
AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and
advises its customers to obtain the latest version of relevant information.
AME, Inc. , July 2003
Document: 2013-DS8844-E
Corporate Headquarter
AME, Inc.
2F, 189 Kang-Chien Road, Nei-Hu Dist.
Taipei 114 Taiwan, R.O.C.
Tel: 886 2 2627-8687
U.S.A. (Subsidiary)
Analog Microelectronics, Inc.
3100 De La Cruz Blvd. Suite 201
Santa Clara, CA. 95054-2046
Tel : (408) 988-2388
Fax: 886 2 2659-2989
Fax: (408) 988-2489
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