FS6205-01 [AMI]
Clock Generator, 74.5808MHz, CMOS, PDSO8, 0.150 INCH, SOIC-8;
| 型号： | FS6205-01 |
| 厂家： | 
AMI SEMICONDUCTOR |
| 描述： | Clock Generator, 74.5808MHz, CMOS, PDSO8, 0.150 INCH, SOIC-8 时钟 光电二极管 外围集成电路 晶体 |
| 文件： | 总8页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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1.0 Features
2.0 Description
The FS6205 is a monolithic CMOS clock generator IC
designed to minimize cost and component count in digital
video/audio systems.
•
On-chip tunable voltage-controlled crystal oscillator
circuitry (VCXO) allows precise system frequency
tuning (pull range typically 300ppm)
An on-chip voltage-controlled crystal oscillator (VCXO)
permits the reference frequency (or output frequency) to
be tuned to match other frequencies present in the sys-
tem.
•
•
Uses inexpensive fundamental-mode crystals
Integrated phase-locked loops (PLL) multiply VCXO
frequency to the higher system frequencies needed
•
•
•
3.3V or 5V supply voltage available
Phase-locked loops are used to generate precise output /
reference frequency ratios. See Table 1 for information
on the frequency ratios programmed into each version of
the FS6205.
Small circuit board footprint (8-pin 0.150″ SOIC)
Custom frequency selections available - contact your
local AMI Sales Representative for more information
Table 1: Version Information
Figure 1: Pin Configuration
DEVICE
VDD
(nom)
FREF
(MHz)
FS
MS
CLK
(MHz)
1
8
7
6
5
XIN
XOUT
MS
27.000
(REF * 2)
F
0
0
1
1
0
1
0
1
S
13.500
2
VDD
6
74.175824175…
(REF * 500 / 91)
025
3
4
XTUNE
VSS
FS
FS6205-01
3.3
27.027
(REF * 2)
CLK
13.5135
74.580835443…
(REF * 436 / 79)
8-pin (0.150″) SOIC
NOTE: Contact AMI for custom versions
Figure 2: Block Diagram
XIN
VCXO
PLL A
PLL B
XOUT
MUX
CLK
XTUNE
FS
MS
FS6205
American Microsystems, Inc. reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
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Table 2: Pin Descriptions
Key: AI = Analog Input; AO = Analog Output; DI = Digital Input; DIU = Input with Internal Pull-Up; DID = Input with Internal Pull-Down; DIO = Digital Input/Output; DI-3 = Three-Level Digital Input,
DO = Digital Output; P = Power/Ground; # = Active Low pin
PIN
TYPE
NAME
DESCRIPTION
1
2
3
4
5
6
7
8
AI
P
XIN
VDD
XTUNE
VSS
CLK
VCXO Crystal Feedback
Power Supply (+3.3V or +5V) – see Version Information
AI
VCXO Tune
P
Ground
DO
DIU
DIU
AO
Clock Output
FS
Frequency Select Input (changes PLL Frequencies)
Multiplexer Select Input (chooses PLL A or PLL B)
VCXO Crystal Drive
MS
XOUT
the oscillator circuit. The actual amount that changing the
load capacitance alters the oscillator frequency will be
dependent on the characteristics of the crystal as well as
the oscillator circuit itself.
3.0 Functional Block Description
3.1
Phase-Locked Loops (PLL)
Specifically, the motional capacitance of the crystal (usu-
ally referred to by crystal manufacturers as C1), the static
capacitance of the crystal (C0), and the load capacitance
(CL) of the oscillator determine the “warping” or “pulling”
capability of the crystal in the oscillator circuit.
The on-chip PLLs are a standard frequency- and phase-
locked loop architecture. The PLL multiplies the reference
oscillator to the desired frequency by a ratio of integers.
The frequency multiplication is exactly that specified by
the integer ratios.
A simple formula to obtain the pulling capability of a
crystal oscillator is:
3.2
Voltage-Controlled Crystal
Oscillator (VCXO)
6
×
(
+
−
)
×
C1 CL2 CL1 10
2×
∆f (ppm) =
(
)
×
(
+
)
C0 CL2 C0 CL1
where CL1 and CL2 are the two extremes of the applied
load capacitance.
The VCXO provides a tunable, low-jitter frequency refer-
ence for the rest of the FS6109 system components.
Loading capacitance for the crystal is internal to the
FS6205. No external components (other than the crystal
resonator itself) are required for operation of the VCXO.
EXAMPLE: A crystal with the following parameters is
used. With C1 = 0.02pF, C0 = 5pF, CL1 = 13pF, and CL2
=
35pF, the tuning range between extreme settings of
XTUNE voltage is:
Continuous fine-tuning of the VCXO frequency is accom-
plished by varying the voltage on the XTUNE pin. The
total change (from one extreme to the other) in effective
loading capacitance is 12pF nominal (i.e from 35pF to
13pF).
6
0.02×
(
35 −13
)
×
10
.
≈ 306ppm
∆f =
2×
(
5 + 35
)
×
(
5 +13
)
The oscillator operates the crystal resonator in the paral-
lel-resonant mode. Crystal warping, or the “pulling” of the
crystal oscillation frequency, is accomplished by altering
the effective load capacitance presented to the crystal by
2
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4.0 Electrical Specifications
Table 3: Absolute Maximum Ratings
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These conditions represent a stress rating only, and functional operation of the device at
these or any other conditions above the operational limits noted in this specification is not implied. Exposure to maximum rating conditions for extended conditions may affect device performance,
functionality, and reliability.
PARAMETER
SYMBOL
MIN.
MAX.
UNITS
Supply Voltage (VSS = ground)
Input Voltage, dc
VDD
VI
VSS-0.5
VSS-0.5
VSS-0.5
-50
7
VDD+0.5
VDD+0.5
50
V
V
Output Voltage, dc
VO
IIK
V
Input Clamp Current, dc (VI < 0 or VI > VDD
)
mA
mA
°C
°C
°C
°C
kV
Output Clamp Current, dc (VI < 0 or VI > VDD
)
IOK
TS
TA
TJ
-50
50
Storage Temperature Range (non-condensing)
Ambient Temperature Range, Under Bias
Junction Temperature
-65
150
-55
125
125
Lead Temperature (soldering, 10s)
260
Input Static Discharge Voltage Protection (MIL-STD 883E, Method 3015.7)
2
CAUTION: ELECTROSTATIC SENSITIVE DEVICE
Permanent damage resulting in a loss of functionality or performance may occur if this device is subjected to a high-energy elec-
trostatic discharge.
Table 4: Operating Conditions
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
SEE NOTE 1
MIN.
TYP.
MAX.
UNITS
Supply Voltage (3.3 volt system)
Supply Voltage (5.0 volt system)
Ambient Operating Temperature Range
Crystal Resonator Frequency
VDD
VDD
TA
3.0
4.5
0
3.3
5.0
3.6
5.5
70
V
V
SEE NOTE 1
SEE NOTE 1
°C
fXTAL
Fundamental Mode
5
18
MHz
NOTE 1: These specifications represent generic FS6205 device capability. Device specifications for a particular version (i.e. FS6205-xx) are guaranteed only with the operating voltage and refer-
ence frequency specified in Version Information.
3
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Table 5: DC Electrical Specifications (VDD = 3.3V nominal)
Unless otherwise stated, VDD = 3.3V ± 10%, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization
data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are ± 3σ from typical. Negative currents indicate current flows out of the device.
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
MIN.
TYP.
MAX.
UNITS
Overall
Supply Current, Dynamic, with Loaded
Outputs
IDD
fXTAL = 13.5MHz; CL = 10pF, VDD = 3.3V
t.b.d.
mA
Crystal Oscillator
As seen by a crystal connected to XIN and
XOUT (@VXTUNE=mid-scale)
Crystal Loading Capacitance
CL(xtal)
20
pF
RXTAL=20Ω;
Crystal Drive Level
200
uW
Clock Outputs (CLKx)
High-Level Output Source Current *
Low-Level Output Sink Current *
IOH
IOL
VO = 2.0V
-40
17
25
25
-55
55
mA
mA
VO = 0.4V
zOH
zOL
IOSH
IOSL
VO = 0.1VDD; output driving high
VO = 0.1VDD; output driving low
VO = 0V; shorted for 30s, max.
VO = 3.3V; shorted for 30s, max.
Ω
Output Impedance *
Short Circuit Source Current *
Short Circuit Sink Current *
mA
mA
4
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Table 6: DC Electrical Specifications (VDD = 5V nominal)
Unless otherwise stated, VDD = 5.0V ± 10%, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization
data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are ± 3σ from typical. Negative currents indicate current flows out of the device.
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
MIN.
TYP.
MAX.
UNITS
Overall
Supply Current, Dynamic, with Loaded
Outputs
IDD
fXTAL = 13.5MHz; CL = 10pF, VDD = 5.0V
mA
Crystal Oscillator
As seen by a crystal connected to XIN and
XOUT
Crystal Loading Capacitance
CL(xtal)
pF
RXTAL=20Ω;
Crystal Drive Level
uW
Clock Outputs (CLKx)
High-Level Output Source Current *
Low-Level Output Sink Current *
IOH
IOL
VO = 2.0V
mA
mA
VO = 0.4V
zOH
zOL
IOSH
IOSL
VO = 0.1VDD; output driving high
VO = 0.1VDD; output driving low
VO = 0V; shorted for 30s, max.
VO = 5V; shorted for 30s, max.
Ω
Output Impedance *
Short Circuit Source Current *
Short Circuit Sink Current *
mA
mA
5
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Table 7: AC Timing Specifications (VDD = 3.3V nominal)
Unless otherwise stated, VDD = 3.3V ± 10%, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization
data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are ± 3σ from typical.
CLOCK
(MHz)
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
MIN.
TYP.
MAX.
UNITS
Overall
Synthesis Error
(unless otherwise noted in Frequency Table)
0
ppm
Clock Output (CLKx)
Ratio of high pulse width (as measured from rising edge
to next falling edge at VDD/2) to one clock period
Duty Cycle *
45
55
%
From rising edge to next rising edge at
tj(∆P)
tj(LT)
Jitter, Period (peak-peak) *
390
155
ps
V
DD/2, CL = 10pF
From 0-500µs at VDD/2, CL = 10pF
compared to ideal clock source
Jitter, Long Term (σy(τ)) *
ps
Rise Time *
Fall Time *
tr
tf
VDD = 3.3V; VO = 0.3V to 3.0V; CL = 10pF
VDD = 3.3V; VO = 3.0V to 0.3V; CL = 10pF
1.7
1.7
ns
ns
Table 8: AC Timing Specifications (VDD = 5V nominal)
Unless otherwise stated, VDD = 3.3V ± 10%, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization
data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are ± 3σ from typical.
CLOCK
(MHz)
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
MIN.
TYP.
MAX.
UNITS
Overall
Synthesis Error
(unless otherwise noted in Frequency Table)
0
ppm
Clock Output (CLKx)
Ratio of high pulse width (as measured from rising edge
to next falling edge at VDD/2) to one clock period
Duty Cycle *
45
55
%
From rising edge to next rising edge at
VDD/2, CL = 10pF
tj(∆P)
tj(LT)
Jitter, Period (peak-peak) *
390
155
ps
From 0-500µs at VDD/2, CL = 10pF
compared to ideal clock source
Jitter, Long Term (σy(τ)) *
ps
Rise Time *
Fall Time *
tr
tf
VDD = 5V; VO = 0.5V to 4.5V; CL = 10pF
VDD = 5V; VO = 4.5V to 0.5V; CL = 10pF
1.0
1.0
ns
ns
6
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June 1999
5.0 Package Information
Table 9: 8-pin SOIC (0.150") Package Dimensions
8
DIMENSIONS
INCHES
MILLIMETERS
MIN.
MAX.
MIN.
MAX.
A
A1
A2
B
0.061
0.004
0.055
0.013
0.068
0.0098
0.061
0.019
1.55
0.102
1.40
1.73
0.249
1.55
E
H
R
0.33
0.49
1
C
D
E
0.0075 0.0098
0.191
4.80
0.249
4.98
ALL RADII:
0.005" TO 0.01"
0.189
0.150
0.196
0.157
h x 45°
7° typ.
3.81
3.99
B
e
e
0.050 BSC
1.27 BSC
C
A2
A
H
h
0.230
0.010
0.016
0°
0.244
0.016
0.035
8°
5.84
0.25
0.41
0°
6.20
0.41
0.89
8°
L
D
θ
A1
L
BASE
PLANE
SEATING
PLANE
Θ
Table 10: 8-pin SOIC (0.150") Package Characteristics
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
Air flow = 0 m/s
TYP.
UNITS
Thermal Impedance, Junction to Free-Air
8-pin 0.150” SOIC
ΘJA
110
°C/W
Corner lead
2.0
1.6
Lead Inductance, Self
L11
nH
Center lead
Lead Inductance, Mutual
Lead Capacitance, Bulk
L12
Any lead to any adjacent lead
Any lead to VSS
0.4
nH
pF
C11
0.27
7
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6.0 Ordering Information
OPERATING
SHIPPING
CONFIGURATION
ORDERING CODE
DEVICE NUMBER
PACKAGE TYPE
TEMPERATURE RANGE
0°C to 70°C (Commercial)
0°C to 70°C (Commercial)
8-pin (0.150”) SOIC
(Small Outline Package)
11640-t.b.d.
11640-t.b.d.
FS6205-01
Tape and Reel
Tubes
8-pin (0.150”) SOIC
(Small Outline Package)
FS6205-01
Copyright © 1999 American Microsystems, Inc.
Devices sold by AMI are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. AMI
makes no warranty, express, statutory implied or by description, regarding the information set forth herein or regarding the freedom
of the described devices from patent infringement. AMI makes no warranty of merchantability or fitness for any purposes. AMI re-
serves the right to discontinue production and change specifications and prices at any time and without notice. AMI’s products are
intended for use in commercial applications. Applications requiring extended temperature range, unusual environmental require-
ments, or high reliability applications, such as military, medical life-support or life-sustaining equipment, are specifically not recom-
mended without additional processing by AMI for such applications.
American Microsystems, Inc., 2300 Buckskin Rd., Pocatello, ID 83201, (208) 233-4690, FAX (208) 234-6796,
WWW Address: http://www.amis.com E-mail: tgp@amis.com
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