DCR1003SN1515 [AMMSEMI]
High Power Button Capsule Thyristor;
| 型号： | DCR1003SN1515 |
| 厂家： | 
American Microsemiconductor |
| 描述： | High Power Button Capsule Thyristor 栅 栅极 |
| 文件： | 总4页 (文件大小：2266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
HighꢀPowerꢀ
ButtonꢀCapsuleꢀ
Thyristorꢀ
DCR1003ꢀSeriesꢀ
DCR1004ꢀSeriesꢀ
IT(AV)ꢀ=ꢀ1540A
ꢀ
VRRMꢀ=ꢀ1700V
ꢀ
Typeꢀ
Non-Repetitiveꢀ
PeakꢀVoltagesꢀ
Repetitiveꢀ
OUTLINEꢀNꢀ
ꢀ
Numberꢀ
PeakꢀVoltagesꢀ
VDSMꢀVRSM
ꢀ
VDRMꢀVRRMꢀ
DCR1003SN1818ꢀꢀDCR1004SN1818ꢀ
DCR1003SN1717ꢀꢀDCR1004SN1717ꢀ
DCR1003SN1616ꢀꢀDCR1004SN1616ꢀ
DCR1003SN1515ꢀꢀDCR1004SN1515ꢀ
DCR1003SN1414ꢀꢀDCR1004SN1414ꢀ
DCR1003SN1313ꢀꢀDCR1004SN1313ꢀ
DCR1003SN1212ꢀꢀDCR1004SN1212ꢀ
DCR1003SN1111ꢀꢀDCR1004SN1111ꢀ
DCR1003SN1010ꢀꢀDCR1004SN1010ꢀ
DCR1003SN0909ꢀꢀDCR1004SN0909ꢀ
DCR1003SN0808ꢀꢀDCR1004SN0808ꢀ
DCR1003SN0707ꢀꢀDCR1004SN0707ꢀ
DCR1003SN0606ꢀꢀDCR1004SN0606ꢀ
DCR1003SN0505ꢀꢀDCR1004SN0505ꢀ
DCR1003SN0404ꢀꢀDCR1004SN0404ꢀ
DCR1003SN0303ꢀꢀDCR1004SN0303ꢀ
DCR1003SN0202ꢀꢀDCR1004SN0202ꢀ
DCR1003SN0101ꢀꢀDCR1004SN0101ꢀ
1800ꢀ
1700ꢀ
1600ꢀ
1500ꢀ
1400ꢀ
1300ꢀ
1200ꢀ
1100ꢀ
1000ꢀ
900ꢀ
1700.ꢀ
1600.ꢀ
1500.ꢀ
1400.ꢀ
1300.ꢀ
1200.ꢀ
1100.ꢀ
1000.ꢀ
900.ꢀ
800.ꢀ
700.ꢀ
600.ꢀ
500.ꢀ
400.ꢀ
300.ꢀ
200.ꢀ
150.ꢀ
75.ꢀ
800ꢀ
700ꢀ
600ꢀ
500ꢀ
400ꢀ
300ꢀ
200ꢀ
100ꢀ
ꢀ
CURRENTꢀRATINGS―ꢀDOUBLEꢀSIDEꢀCOOLEDꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
IT(AV)
ꢀ
Meanꢀon-stateꢀcurrentꢀ
RMSꢀvalueꢀ
HalfꢀwaveꢀresistiveꢀloadꢀTHSꢀ=ꢀ55oCꢀ
1540ꢀAꢀ
2420ꢀAꢀ
IRMS
ITꢀ
ꢀ
THSꢀ=ꢀ55oCꢀ
Continuousꢀ(direct)ꢀon-stateꢀcurrentꢀ
THSꢀ=ꢀ55oCꢀ
2050ꢀAꢀ
R(th(J-h)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Thermalꢀresistanceꢀjunctionꢀtoꢀ
Clampingꢀforceꢀ19.5kNꢀ
d.c.ꢀ .026OC/Wꢀ
Half-waveꢀ .028OC/Wꢀ
3-phaseꢀ .030OC/Wꢀ
ꢀ
ꢀ
heatsinkꢀsurfaceꢀ
(withꢀmountingꢀgrease)ꢀ
ꢀ
CURRENTꢀRATINGS―SINGLEꢀSIDEꢀCOOLEDꢀ
IT(AV)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Meanꢀon-stateꢀcurrentꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
HalfꢀwaveꢀresistiveꢀloadꢀTHSꢀ=ꢀ55oCꢀ
THSꢀ=ꢀ55oCꢀ
870ꢀAꢀ
1365ꢀAꢀ
1060ꢀAꢀ
IRMSꢀꢀꢀ
ITꢀ
RMSꢀvalueꢀ
Continuousꢀ(direct)ꢀon-stateꢀcurrentꢀ
THSꢀ=ꢀ55oCꢀ
R(th(J-h)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Thermalꢀresistanceꢀjunctionꢀtoꢀ
Clampingꢀforceꢀ19.5kNꢀ
(withꢀmountingꢀgrease)ꢀ
ꢀ
d.c.ꢀ .06oC/Wꢀ
ꢀ
ꢀ
heatsinkꢀsurfaceꢀ
Half-waveꢀ .062oC/Wꢀ
3-phaseꢀ .064oC/Wꢀ
SURGEꢀRATINGSꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ITRM
ꢀ
Repetitiveꢀpeakꢀon-stateꢀcurrentꢀ
Sinusoidalꢀwaveformꢀconductionꢀangleꢀ
ɬꢀ=ꢀ30oꢀꢀꢀTHSꢀ=ꢀ55oCꢀ
14920ꢀAꢀ
ꢀ
ꢀ
ꢀ
I2tꢀꢀꢀ
ꢀ
I2tꢀforꢀfusingꢀ
10mSꢀhalfꢀsineꢀTJꢀ=ꢀ125oCꢀ
3mSꢀhalfꢀsineꢀTJꢀ=ꢀ125oCꢀ
Withꢀ50%ꢀVRSMꢀTJꢀ=ꢀ125oCꢀ
FromꢀVDꢀtoꢀ1000A,ꢀGateꢀsourceꢀ10Vꢀ
5Ωꢀriseꢀtimeꢀ0.5µs,ꢀTJꢀ=ꢀ125oCꢀ
Voltageꢀꢀ=ꢀ67%VDRM,ꢀTcaseꢀ=ꢀ125oCꢀ
ꢀ
2205000ꢀA2secꢀ
ꢀ
1540000ꢀA2secꢀ
ITSM
ꢀ
Surgeꢀ(non-repetitive)ꢀon-stateꢀcurrentꢀ
21000ꢀAꢀ
dlT/dtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Rateꢀofꢀriseꢀofꢀon-stateꢀcurrentꢀ
100A/µsꢀ
ꢀ
ꢀ
ꢀ
dv/dt*ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Maxꢀlinearꢀrateꢀofꢀriseꢀofꢀoff-stateꢀvoltageꢀ
*Higherꢀvaluesꢀavailable.ꢀ
300ꢀV/ꢀµsꢀ
ꢀ
GATEꢀRATINGSꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
VFGM
VFGN
VRGM
ꢀ
Peakꢀforwardꢀgateꢀvoltageꢀ
Peakꢀforwardꢀgateꢀvoltageꢀ
Peakꢀreverseꢀgateꢀvoltageꢀ
Peakꢀforwardꢀgateꢀcurrentꢀ
Peakꢀgateꢀpowerꢀ
Anodeꢀpositiveꢀwithꢀrespectꢀtoꢀcathodeꢀ
30ꢀVꢀ
0.25ꢀVꢀ
5ꢀVꢀ
ꢀ
Anodeꢀnegativeꢀwithꢀrespectꢀtoꢀcathodeꢀ
ꢀ
ꢀ
IFGM
PGM
PGꢀ
ꢀ
ꢀ
Anodeꢀpositiveꢀwithꢀrespectꢀtoꢀcathodeꢀ
10ꢀAꢀ
150ꢀWꢀ
10ꢀWꢀ
ꢀ
135OCꢀ
125OCꢀ
Pulseꢀwidthꢀ=ꢀ100µꢀ
Meanꢀgateꢀpowerꢀ
ꢀ
TEMPERATUREꢀ&ꢀFREQUENCYꢀRATINGSꢀ
ꢀ
TVJ
ꢀ
ꢀ
Virtualꢀjunctionꢀtemperatureꢀ
ꢀ
On-stateꢀ(conduction)ꢀ
Off-stateꢀ(blocking)ꢀ
Tstg
Fꢀꢀꢀ
ꢀ
Storageꢀtemperatureꢀrangeꢀ
Frequencyꢀrangeꢀ
ꢀ
ꢀ
-55ꢀtoꢀ 125ꢀOCꢀ
10ꢀtoꢀ 400ꢀHzꢀ
ꢀ
ꢀ
ꢀ
ꢀ
DocumentꢀPageꢀ1ꢀofꢀ4ꢀ
Tel.ꢀ1-973-377-9566ꢀꢀꢀFax.ꢀ1-973-377-3078ꢀ
133ꢀKingsꢀRoadꢀ
ꢀꢀꢀꢀ Madison,ꢀNewꢀJerseyꢀꢀ07940ꢀ
UnitedꢀStatesꢀofꢀAmericaꢀ
ꢀ
ꢀ
Revisedꢀ05/2016ꢀ
DEKRAꢀCertificationꢀInc.ꢀ
©ꢀ2016ꢀAmericanꢀMicrosemiconductor,ꢀInc.ꢀ
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnoticeꢀ
www.americanmicrosemi.comꢀ
AS9100CꢀandꢀISOꢀ9001:2008ꢀ
CertificateꢀNo.ꢀ131519.01ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
DCR1003ꢀSeriesꢀ
DCR1004ꢀSeriesꢀ
IT(AV)ꢀ=ꢀ1540ꢀAꢀ
VRRMꢀ=ꢀ1700ꢀVꢀ
ꢀ
ꢀ
CHARACTERISTICS―ꢀTcaseꢀ=ꢀ25oCꢀunlessꢀotherwiseꢀstatedꢀ
ꢀ
LIMITꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
5%ꢀ
Typꢀ
95%ꢀ
Maxꢀ
Unitsꢀ
ꢀ
VTM
ꢀ
ꢀ
On-stateꢀvoltageꢀ
ꢀ
Atꢀ2900Aꢀpeakꢀ
ꢀ
Tcaseꢀ=ꢀ125oCꢀ
DCRꢀ1003ꢀ
ꢀ
ꢀ
ꢀ
1.5ꢀ
Vꢀ
Vꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
DCR1004ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1.625ꢀ
IDM
ꢀ
Peakꢀoff-stateꢀcurrentꢀ
Peakꢀreverseꢀcurrentꢀ
Latchingꢀcurrentꢀ
Holdingꢀcurrentꢀ
Delayꢀtimeꢀ
ꢀ
ꢀ
ꢀ
50ꢀ
mAꢀ
mAꢀ
mAꢀ
mAꢀ
µsꢀ
µsꢀ
ꢀ
IRM
ILꢀ
IHꢀ
tdꢀ
tqꢀ
ꢀ
ꢀ
Tcaseꢀ=ꢀ125oCꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
50ꢀ
VDꢀ=ꢀ5VꢀTpꢀ=ꢀ30µSꢀ
VDꢀ=ꢀ5VꢀGateꢀopenꢀcircuitꢀ
ꢀ
120ꢀ
ꢀ
ꢀ
ꢀ
77ꢀ
ꢀ
ꢀ
VDꢀ=ꢀ100V,ꢀGateꢀsourceꢀ=ꢀ25Vꢀ5Ωꢀ
ITꢀ=ꢀ800A,ꢀVRRMꢀ=ꢀ50V,ꢀdlRR/dtꢀ=ꢀ20A/µSꢀ
VDRꢀ=ꢀfullꢀratedꢀVD,ꢀ
dVDR/dtꢀ=ꢀ20V/µsꢀIinearꢀ,ꢀTcaseꢀ=ꢀ125oCꢀ
0.58ꢀ
0.8ꢀ
1.52ꢀ
ꢀ
Circuitꢀcommutatedꢀ
Turn-offꢀtimeꢀ
90ꢀ
215ꢀ
380ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
VGT
VGD
IGT
ꢀ
Gateꢀtriggerꢀvoltageꢀ
Gateꢀnon-triggerꢀvoltageꢀ
Gateꢀtriggerꢀcurrentꢀ
VDRMꢀ=ꢀ5Vꢀ
ꢀ
ꢀ
ꢀ
3.5ꢀ
0.25ꢀ
200ꢀ
Vꢀ
ꢀ
AtꢀVDRM,ꢀTcaseꢀ=ꢀ5Vꢀ
VDWMꢀ=ꢀ5Vꢀ
Vꢀ
ꢀ
mAꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
DocumentꢀPageꢀ2ꢀofꢀ4ꢀ
Tel.ꢀ1-973-377-9566ꢀꢀꢀFax.ꢀ1-973-377-3078ꢀ
133ꢀKingsꢀRoadꢀ
ꢀꢀꢀꢀ Madison,ꢀNewꢀJerseyꢀꢀ07940ꢀ
UnitedꢀStatesꢀofꢀAmericaꢀ
ꢀ
ꢀ
Revisedꢀ05/2016ꢀ
DEKRAꢀCertificationꢀInc.ꢀ
©ꢀ2016ꢀAmericanꢀMicrosemiconductor,ꢀInc.ꢀ
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnoticeꢀ
www.americanmicrosemi.comꢀ
AS9100CꢀandꢀISOꢀ9001:2008ꢀ
CertificateꢀNo.ꢀ131519.01ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
DCR1003ꢀSeriesꢀ
DCR1004ꢀSeriesꢀ
IT(AV)ꢀ=ꢀ1540ꢀAꢀ
VRRMꢀ=ꢀ1700ꢀVꢀ
T-25-21ꢀ
ꢀꢀ
ꢀ
ꢀ
ꢀ
DocumentꢀPageꢀ3ꢀofꢀ4ꢀ
Tel.ꢀ1-973-377-9566ꢀꢀꢀFax.ꢀ1-973-377-3078ꢀ
133ꢀKingsꢀRoadꢀ
ꢀꢀꢀꢀ Madison,ꢀNewꢀJerseyꢀꢀ07940ꢀ
UnitedꢀStatesꢀofꢀAmericaꢀ
ꢀ
ꢀ
Revisedꢀ05/2016ꢀ
DEKRAꢀCertificationꢀInc.ꢀ
©ꢀ2016ꢀAmericanꢀMicrosemiconductor,ꢀInc.ꢀ
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnoticeꢀ
www.americanmicrosemi.comꢀ
AS9100CꢀandꢀISOꢀ9001:2008ꢀ
CertificateꢀNo.ꢀ131519.01ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
DCR1003ꢀSeriesꢀ
DCR1004ꢀSeriesꢀ
IT(AV)ꢀ=ꢀ1540ꢀAꢀ
VRRMꢀ=ꢀ1700ꢀVꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
DocumentꢀPageꢀ4ꢀofꢀ4ꢀ
Tel.ꢀ1-973-377-9566ꢀꢀꢀFax.ꢀ1-973-377-3078ꢀ
133ꢀKingsꢀRoadꢀ
ꢀꢀꢀꢀ Madison,ꢀNewꢀJerseyꢀꢀ07940ꢀ
UnitedꢀStatesꢀofꢀAmericaꢀ
ꢀ
ꢀ
Revisedꢀ05/2016ꢀ
DEKRAꢀCertificationꢀInc.ꢀ
©ꢀ2016ꢀAmericanꢀMicrosemiconductor,ꢀInc.ꢀ
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnoticeꢀ
www.americanmicrosemi.comꢀ
AS9100CꢀandꢀISOꢀ9001:2008ꢀ
CertificateꢀNo.ꢀ131519.01ꢀ
相关型号：
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