FQN18F25X03D [AMPHENOL]

Push-On Terminal,;
FQN18F25X03D
型号: FQN18F25X03D
厂家: Amphenol    Amphenol
描述:

Push-On Terminal,

端子和端子排
文件: 总1页 (文件大小:561K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BURNDY® Products  
Compression  
TYPES FQN-F AND  
FQN-M FINGRIP™  
NYLON FULLY INSULATED  
FEMALE AND MALE QUICK  
DISCONNECTS  
Fig. 1  
B-39  
MATERIAL: TIN-PLATED  
BRASS  
300 VOLTS MAX. 105C MAX.  
Features and Benefits  
• Fully insulated connectors.  
9 Eliminate the need for post installation  
insulation.  
• Funnel entry barrel opening.  
9 Assures quick and easy wire insertion.  
• Dimpled female socket detent.  
9 Ensures firm grip.  
Fig. 2  
FULLY INSULATED FEMALE NYLON DISCONNECT TERMINAL (Fig. 1)  
STANDARD  
CATALOG NO.  
STD. PKG.  
QTY.  
WIRE  
RANGE  
NEMA TAB  
SIZE  
DIMENSIONS  
A
BULK  
CATALOG NO.  
BULK PKG. INSTALLATION  
QTY.  
W
TOOL*  
FQN18F25X03D  
FQN14F25X03D  
FQN10F25X03D  
50  
50  
25  
18-22  
14-16  
10-12  
.250 .032  
.250 .032  
.250 .032  
0.98  
0.96  
0.99  
0.40  
0.40  
0.41  
FQN18F25X03B  
FQN14F25X03B  
FQN10F25X03B  
1000  
1000  
500  
Y10D  
FULLY INSULATED MALE NYLON DISCONNECT TERMINAL (Fig. 2)  
STANDARD  
CATALOG NO.  
STD. PKG.  
QTY.  
WIRE  
RANGE  
NEMA TAB  
SIZE  
DIMENSIONS  
A
BULK  
CATALOG NO.  
BULK PKG. INSTALLATION  
QTY.  
W
TOOL*  
FQN18M25X03D  
FQN14M25X03D  
FQN10M25X03D  
50  
50  
25  
18-22  
14-16  
10-12  
.250 .032  
.250 .032  
.250 .032  
1.05  
1.03  
1.03  
0.48  
0.48  
0.48  
FQN18M25X03B  
FQN14M25X03B  
FQN10M25X03B  
1000  
1000  
500  
Y10D  
* For UL listed applications consult BURNDY® factory.  
** For Mylar tape reels consult BURNDY® factory.  

相关型号:

FQN18M25X03B

TAB Terminal
AMPHENOL

FQN18M25X03D

TAB Terminal
AMPHENOL

FQN1N50C

500V N-Channel MOSFET
FAIRCHILD

FQN1N50CBU

Small Signal Field-Effect Transistor, 0.38A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, LEAD FREE, TO-92, 3 PIN
FAIRCHILD

FQN1N50CTA

N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ohm
FAIRCHILD

FQN1N50CTA

功率 MOSFET,N 沟道,QFET®,500 V,0.38 A,6 Ω,TO-92
ONSEMI

FQN1N60C

600V N-Channel MOSFET
FAIRCHILD

FQN1N60CBU

Small Signal Field-Effect Transistor, 0.3A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, LEAD FREE, TO-92, 3 PIN
FAIRCHILD

FQN1N60CBU

300mA, 600V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, TO-92, 3 PIN
ROCHESTER

FQN1N60CTA

300mA, 600V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, TO-92, 3 PIN
ROCHESTER

FQN1N60CTA

功率 MOSFET,N 沟道,QFET®,600 V,0.3 A,11.5 Ω,TO-92
ONSEMI

FQNL1N50B

500V N-Channel MOSFET
FAIRCHILD