NE24008000J0G [AMPHENOL]

Barrier Strip Terminal Block;
NE24008000J0G
型号: NE24008000J0G
厂家: AMPHENOL CORPORATION    AMPHENOL CORPORATION
描述:

Barrier Strip Terminal Block

端子和端子排
文件: 总1页 (文件大小:104K)
下载:  下载PDF数据表文档文件

NE24009000J0G

Barrier Strip Terminal Block

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0 AMPHENOL

NE24200

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

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31 NEC

NE24200

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)

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7 NEC

NE24200

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-6

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0 CEL

NE24200_00

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)

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16 NEC

NE24283B

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)

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56 NEC

NE24300

TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 110MA I(C) | CHIP

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28 ETC

NE24300

RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN

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1 CEL

NE243187

TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 110MA I(C) | FO-102VAR

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3 ETC

NE243187

RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN

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0 CEL

NE243188

TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 110MA I(C) | RFMOD

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3 ETC

NE243188

RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN

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0 CEL

NE243287

TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 220MA I(C) | FO-102VAR

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23 ETC

NE243287

RF Power Bipolar Transistor, 1-Element, X Band, Silicon, NPN

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0 CEL

NE243288

TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 220MA I(C) | RFMOD

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4 ETC