AS3635 [AMSCO]
Xenon Flash Driver with 5V IGBT Control; 氙气闪光灯驱动器与5V IGBT控制
| 型号： | AS3635 |
| 厂家： | 
AMS(艾迈斯) |
| 描述： | Xenon Flash Driver with 5V IGBT Control |
| 文件： | 总21页 (文件大小：1538K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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is now
ams AG
The technical content of this austriamicrosystems datasheet is still valid.
Contact information:
Headquarters:
ams AG
Tobelbaderstrasse 30
8141 Unterpremstaetten, Austria
Tel: +43 (0) 3136 500 0
e-Mail: ams_sales@ams.com
Please visit our website at www.ams.com
Datasheet
AS3635
Xenon Flash Driver with 5V IGBT Control
1 General Description
2 Key Features
ꢀ
Build in 5V charge-pump for IGBT gate drive
The AS3635 is a highly integrated photoflash charger
with build in IGBT driver.
ꢀ
Photoflash voltage accuracy programmable to ±3%
(in circuit One Time Programmable - OTP)
A build in 5V charge-pump guaranties constant IGBT
drive at any battery voltage. The build in timer turns off
the charge-pump 20 seconds after charging.
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Trip voltage accuracy ±1.5%
Small Size 1.5mm x 1.5mm x 0.6mm
PCB: No microvias need
In circuit fuse trimming allows to set the voltage on the
photoflash capacitor to ±3% accuracy.
Average input current < 320mA
Few external components
- No Schottky-Diode needed
- No output voltage divideneedd
The AS3635 is available in a space-saving WL-CSP
package measuring only 1.5mm x 1.5mm and operates
over the -30ºC to +85ºC temperature range.
ꢀ
ꢀ
ꢀ
ꢀ
Relie Flash on/off for IGBT timing.
hare time < 4sec @ Vba2.7V, CFLASH =22µF
Charge comple indicator
Undervoltage lockut
Available ia tinWL-CSP Package
3x3 ba0.5m pitch, 1.5x1.5mm package size
Warning: Lethal voltages are present on applications
using AS3635! Do not operate wihoutrain-
ing to handle high voltages.
3 Applications
XenoFlash driver for mobile phones, PDA and DSC
Figure 1. Typical Operating Circuit
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AS3635
www.austriamicrosystems.com/AS3635
(ptr)
1.4-8
1 - 20
AS3635
Datasheet - Pinout
4 Pinout
Pin Assignment
Figure 2. Pin Assignments (Top Through View)
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AS3635
Pin Description
Table 1. Pin Description for AS363
Pin Number
Pin Name
SW
Description
Xenon DCDC converter switching node
A1
A2
A3
B1
B2
B3
C1
C2
C3
Positive suply oltage input
VBAT
5V chrge pump output
V5V
Digl input pin, active high - enables charging of photoflash capacitor
Poer ground - connect to ground (GND)
CHARGE
PGND
GBT gate control - internally level shifted to 5V (from pin V5V)
Digital input pin, active high - Enables flash (level shifted to IGBT_GATE)
Signal ground - connect to ground (GND)
IGBT_GATE
FLSH
GND
Digital open drain output, active low - indicates end of charging
DONE
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1.4-8
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AS3635
Datasheet - Absolute Maximum Ratings
5 Absolute Maximum Ratings
Stresses beyond those listed in Table 2 may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in Table 3, “Electrical
Characteristics,” on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Table 2. Absolute Maximum Ratings
Parameter
Min
Max
Units
Comments
VBAT, V5V to GND
-0.3
+7.0
V
VBAT +
0.3
CHARGE, DONE, FLASH to GND
-0.3
V
maximum 7.0V
V5V +
0.3
IGBT_GATE to GND
SW to PGND
-0.3
-0.3
V
V
+55.0
Connect PGND to ND rectly below
the pad (short cnnection
recomendd)
PGND to GND
0.0
0.0
V
+10
+IIN
Input Pin Current without causing latchup
-100
m
Norm: EA/JESD78
Continuous Power Dissipation (TA = +70ºC)
Continuous power dissipation
1
6
W
PT
Electrostatic Discharge
Air Discharge to module;
IEC 61000 -4 -2 test bench
±15000
±8000
V
V
ESD pins VBAT, CHARGE, DONE, FLASH2
Contact Test to module;
IEC 61000 -4 -2 test bench
ESD HBM pins SW, IGBT_GATE, PGND, 5V
±200
±50
00
V
V
V
Norm: MIL 883 E Method 3015
Norm: JEDEC JESD 22-C101C
ESD CDM
ESD MM
Norm: JEDEC JESD 22-A115-A level A
Temperature Ranges and Storage Conditions
Storage Temperature Range
Humidity
-5
5
+125
85
ºC
%
Non condensing
Body Temperature during Solderng
+260
ºC
according to IPC/JEDEC J-STD-020
Represents a max. floor life time of
unlimited
Moisture Sensitivity Level MSL)
MSL 1
1. Depending on actual PCB layot and PCB used
2. Assembled on PCB bord (requires capacitor CVBAT); special PCB layout (spark gaps) and external resistors
required; system tet for ompleted module (fully capsuled), no permanent interruption of operation
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1.4-8
3 - 20
AS3635
Datasheet - Electrical Characteristics
6 Electrical Characteristics
VVBAT = +2.51V to +5.5V, TAMB = -30ºC to +85ºC, unless otherwise specified. Typical values are at VVBAT = +3.6V,
TAMB = +25ºC, unless otherwise specified.
Table 3. Electrical Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
General Operating Conditions
2.511
-30
VVBAT
TAMB
Supply Voltage
3.6
25
5.5
85
V
Operating
Temperature
ºC
CHARGE = 0, charge pump OFF, FLASH = 0
TAMB<50ºC; VVBAT<3.7V
ISHUTDOWN
VUVLO
Shutdown Current
0.5
1.0
2.5
µA
V
Undervoltage Lockout
Measured on pin VBAT
2.3
VFLASH Capacitor Charger
V(SW) - V(VBAT) in circuit adjustable with
OTP. TAMB = 0°C to 50°C; only if VTRIP is
trimmed by austriamicrosystems
Comparator trip
VTRIP
31.9
29.6
34 32.9
V
voltage
5 bit programming 32.4-11.2/+10.5%;
measured on pSW
Programming range of
VTRIPRANGE
VSW
35.8
50
V
V
VTRIP
Allows in-circuit trig of the final charged
voltage VFLASH apacitor CFLASH
Maximum voltage on
pin SW
ISW
Switching current limit
Switch on resistance
0.75
128
0.9
0.4
1.05
A
RSW
Internal tansistor betweeSW nd PGND
Ω
ed of harge comparatotrigr time - see
Internal Circut on page 8
tEOC_DET
138
148
ns
V
Charge Pump Parameters
5.25 AT > 2.7V
2.7V > VVBAT > 2.51V
4.75
4.3
5.0
5.25
5.25
5V Charge pump
output voltage
VV5V
CHARGE= 0->1->0 (20 seconds timer
Charge Pump
Operating Current
running2), charge pump ON
ICHRG_PUMP
fCLK
163
2.0
µA
incldes 8µA for internal biasing and oscillator
Operating frequency
MHz
IGBT Control - See IGBT Driveon page 13
IGBT control volge
IBGTRISE
0.171 0.214 0.256
0.42 0.525 0.63
µs
µs
Pin IGBT_GATE, rise/falltime 10% - 90%,
rise tm
V5V=5V, TAMB=25ºC, VIN=3.7V, AS3635E,
load: 6.5nF (capacitor)
IGBT contrl voltage
fl time
IBGTFALL
RIGBT_ON
AS3635B
TAMB=-30ºC to 85ºC
30
5
50
15
15
60
46
60
20
20
70
53
Ω
IGBswitching on
resistance
AS3635E
Ω
AS3635B
10
52
40
mA
mA
mA
VIGBT_GATE below 2.3V;
IGBT_K
IGBT Sink Current
TAMB=-30ºC to 85ºC
AS3635E
IIGBBOOST IGBT Boost Current
VIGBT_GATE above 2.3V; TAMB=-30ºC to 85ºC
Digital Interface
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1.4-8
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AS3635
Datasheet - Electrical Characteristics
Table 3. Electrical Characteristics (Continued)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
High Level Input
Voltage
VIH
1.26
V
Pins CHARGE, FLASH;
pin DONE in trimmode
Low Level Input
Voltage
VIL
0.0
0.54
V
Low Level Output
Voltage
VOL
Pin DONE, ILOAD=4mA
Pin DONE
0.2
+1
V
ILEAK
Leakage current
-1
µA
Pulldown resistance to
GND3
RPD
Pins CHARGE, FLASH
52
kΩ
Recommended Transformer parameters - see Table 4, “Recommended Transformers,” on page 15
LPRIMARY
Primary Inductance
6
H
µH
Primary Leakage
Inductance
LLEAK
.4
for VFLASH=320V (final charged
voltage on CFLASH)
N
Turns Ratio
10.
VISOLATION
ISATURATION
Isolation Voltage
00
V
A
Primary Saturation
Current
0.84
Primary Winding
Resistance
RPRIMARY
0.4
60
Ω
Ω
Secondary Winding
Resistance
RSECUNDAR
Y
1. Minimum VVBAT is set to 2.51V to allow a littmargin to maximum VLO undervoltage lockout of 2.5V.
2. Setting CHARGE=1 resets the timeut timer. Additionally ttimout timer is automatically stopped at power
on reset and once it has expired.
3. Measured with VBAT=3.7V, CHARGE or FLASH = 1.
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1.4-8
5 - 20
AS3635
Datasheet - Typical Operating Characteristics
7 Typical Operating Characteristics
VBAT = 3.6V, TA = +25ºC (unless otherwise specified). CFLASH=22µF, TCHARGE Transformer = TTRN-3822,
QIGBT=RJP4002ANS, ISW=750mA.
Figure 3. Charging Waveform
Figure 4. Charging Time vs. VBAT
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
20
VFLASH drop due to
load of measurement
2.4
2.8
3.
VBAT (V)
3.6
4.0
500ms/Div
Figure 5. Charging Waveform VBAT=2.51V
ure 6. Charging Waeform VBAT=4.2V
500ms/Div
500ms/Div
Figure 7. Efficiency vs. VFLASH
Figure 8. Efficiency vs. Charging Time
80
80
70
60
70
60
50
40
30
20
50
ote: Efficiency is mostly defined
y eternal components used
and transformer TTRN-3822 is
optimized for size
40
3
20
10
0
VBAT=3.6V
VBAT=2.7V
VBAT=4.2V
VBAT=3.6V
VBAT=2.7V
VBAT=4.2V
10
0
0
50
100 150
Voltage on CFLASH (V)
200 250 300 350
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Charging Time (s)
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1.4-8
6 - 20
AS3635
Datasheet - Typical Operating Characteristics
Figure 9. End of charge Voltage vs. VBAT
Figure 10. IGBT_GATE driving waveform
328
327
326
IGBT_GATE
FLASH
Tamb = -25C
Tamb = +85C
Tamb = +25C
325
2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1
VBAT (V)
1µs/Div
Figure 11. SW switching waveform
Figur12. Sswitching waveform
Transformer:
TTRN-3822
Transformer:
TTRN-3825
50ns/Div
50ns/Div
Figure 13. V5V vs. VBAT (V5V Con)
Figure 14. Battery current vs. VBAT (V5V CP on)
5.2
300
250
200
150
100
5.1
5.0
4.9
50
IV5V= 10uA
IV5V= 10uA
IV5V = no load
IV5V= no load
4.8
0
2.5
3.0
3.5
Input Voltage (V)
4.0
4.5
2.5
3.0
3.5
4.0 4.5
Input Voltage (V)
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1.4-8
7 - 20
AS3635
Datasheet - Detailed Description
8 Detailed Description
The AS3635 is a photoflash capacitor charger and an integrated IGBT driver for a Xenon flash. The capacitor charger
charges VFLASH to the final charging voltage (e.g. 320V) and the IGBT driver starts the actual Xenon flash.
Additionally a charge pump is included to generate a stable 5V supply for accurate control of the IGBT on/off timings
independent of the battery supply.
The final charged voltage (VFLASH) can be in-field trimmed to e.g. 320V with the integrated OTP (one time programma-
ble) memory (see section Trimming Procedure on page 12). VFLASH can be exactly trimmed to the maximum allowed
output voltage resulting in an improved use of the available energy in the photoflash capacitor.
Note: The AS3635 uses a WL-CSP (wafer level chip scale package) to optimize the PCB area required and minimize
the module size. Therefore the actual DIE is visible (and it is not molded in plastic as for other packages lke
QFN or DFN) and the AS3635 is sensitive to external light. It has to be protected from direct light from the
Xenon tube.
Internal Circuit
Figure 15. Internal circuit
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AS3635
AS3635 Operation
The AS3635 allows charging and refresh cycles under complete software control. Two typical configurations are
shown in Figure 16 and Figure 17:
Figure 16 shows a configuration without any refresh between the pre-flash and the actual flash. Typically this is used
for applications where no noise at all should be generated on the battery when the camera is performing e.g. white
color balancing (between pre-flash and flash cycle).
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1.4-8
8 - 20
AS3635
Datasheet - Detailed Description
Figure 16. AS3635 Charging Cycle without recharging between Pre-Flash and Flash
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1.4-8
9 - 20
AS3635
Datasheet - Detailed Description
Figure 17 shows a configuration with continuous refresh of the voltage on the photoflash capacitor (VFLASH). Typically
this is used in application where the maximum flash energy should be used.
Figure 17. AS3635 Charging Cycle with continuous recharging
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www.austriamicrosystems.com/AS3635
1.4-8
10 - 20
AS3635
Datasheet - Detailed Description
A typical charging cycle and its voltages and current on the different pins and signals are shown in Figure 18:
Figure 18. AS3635 Charging Cycle Details
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The input CHARGE is set to high and charging begins (
During a single cycle, the internal NMOS transistor connects the pin SW to PGND (2). Therefore the current ISW rises
(3) until it reaches ISW current limit (4). Then the energy s transferred to the secondary side of the transformer and the
voltage VCFLASH on the flash capacitor CFLSH rises (5).
The output voltage VCFLASH gradually increaseand once it hits the end of charge detection threshold (6) (detected on
VSW during the off time of the NMOS tranr between SW and PGND) 8 times (7)1, DONE is pulled low (8). When
CHARGE is set to low afterwards (9), DOE returns to high (10) finishing a full charging cycle.
Note: For simplicity the numer oactual charging cycles (NMOS SW on/off) are reduced in Figure 18.
1. The 8 cycles required for actual detection of the end of charge conditions are not shown in Figure 18.
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1.4-8
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AS3635
Datasheet - Detailed Description
Trimming Procedure
The final charging voltage on VFLASH can be trimmed in-circuit to cancel inaccuracies of VFLASH due to the transformer
and diode. The trimming procedure is performed as follows:
Figure 19. AS3635 trimming circuit2
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1. The production test equipmnt tarts a charging cycle CHARGE=1) and waits until DONE=0
2. The voltage on VFLASH is meed and a correcode is calculated
3. The trimmode control is unlocked using a speciuence
4. The one time programmable memory (OT) is programmed with the above calculated code
5. The trimmode control can be disabled by fuing the OTP bit trimm_lock
See austriamicrosystems application note AN335_In-Production_Trimming’ for a detailed description of the trimming
setup and the trimming procedure.
2. The internal voltages (e.g. +3.4V/-2.8V/32.4V) are internally scaled to fit in the supply voltage range
www.austriamicrosystems.com/AS3635
1.4-8
12 - 20
AS3635
Datasheet - Detailed Description
IGBT Driver
The internal circuit of the IGBT driver is shown in Figure 20:
Figure 20. IGBT Driver circuit
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The IGBT driver is enable once the chpump is switched on and the voltage on pin V5V has reached 4V (to guar-
antee at least 4V driving signal for the BT).
The IGBT driver includes all required resistors and pulldowns to operate the IGBT without any external circuitry3. Do
not add any external pulldown resistor on pin IGBTGAE.
3. Exception: If the Sanyo IGBT TIG058E8 is used, add a series resistor of 50Ω for the gate drive. For Rene-
sas RJP4006AGE add a series resistor of 68Ω.
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1.4-8
13 - 20
AS3635
Datasheet - Detailed Description
ESD Protection Diodes
The internal ESD diodes are shown in Figure 21 - do not operate ESD diodes in forward direction4:
Figure 21. ESD Diodes
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4. Exception: The diode between SW and PGND is designed to be operated in forward direction for very
short pulses during charging.
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1.4-8
14 - 20
AS3635
Datasheet - Application Information
9 Application Information
External Components
Transformers TCHARGE and TTRIG
Following transformers are recommend for the AS3635 (due to the OTP programming features see section Trimming
Procedure on page 12, the output voltage VFLASH can be programmed):
Table 4. Recommended Transformers
Component
Part Number
N
L
Size (mm)
Manufacturer
Mitsumi Electric
www.mitsumi.co.jp
C3-T2.5R
10.2
6.7µH
3.4x3.4x2.5
TTRN-3825H
TTRN-3822H
TTRN-5820H
TTRN-0520H
LDT4520T-01
10.2
10.2
10.2
10.41
10.2
7µH
7µH
3.8x3.8x2.5
3.8x3.8x2.2
5.8x5.8x2.0
5.0x5.0x2.0
4.7x4.5x2.0
Toyo Coil
wwwokycoil.co.jp
TCHARGE
8.87µH
8.35µH
10µH
TDK
www.tdk.com
3.2x2.5x1.55
(H is max)
ATB322515
BO-02
10.2
7µH
Tokyo Coil
www.tokyo-coil.co.jp
7.3x2.5(3.5)2.2
TTRIG
Always check if the voltage on the pin SW does nvr eceed the AS36maxmum VSW (see Table 3 on page 4)
specification during charging.
IGBT
As the AS3635 has an internal charge ump ncluded, 2.5V, 2V an4V IGBT can be used without limit on the supply
VVBAT. The IGBT is used for two purps:
1. Powering of the Xenon tube and generating togwith the oscillation circuit consisting of TTRIG, CTRIG,
RTRIG a sufficiently high trigger pulse to ignte the Xenon tube (about 3.5kV) - this is accomplished by a fast ris-
ing edge of the gate of the IGBT
2. Switching off the current through thXenon tube at the end of the flash pulse to accurately control the light
emitted by the flash. To protect the IBT the switching off falling edge voltage should be less than 400V/µs
(measured on the emitter of thIGT)
Both requirements are achieved with the rnal driving circuit of the AS3635. Internal OTP trimming allows to adopt
to different trigger coils and IGBT
Table 5. Recommended IGBT
Component
PaNumber
RJP4002ANS
RJP4003ANS
min. Drive Voltage
Size
Manufacturer
2.5V
4.0V
VSON-8
3 x 4.8mm
Renesas
www.renesas.com
2.85x3.05x1.1
mm (H is max.)
RJP4006AGE1
GT8G133
2.7V
4.0V
4.0V
T
Toshiba
www.semicon.toshiba.co.jp
TSSOP-8
3.3 x 6.4mm
Sanyo
www.sanyo.com
ECH8
2.8 x 2.9mm
TIG058E82
1. Add a series resistor of 68Ω in the gate drive.
2. Add a series resistor of 47Ω in the gate drive.
www.austriamicrosystems.com/AS3635
1.4-8
15 - 20
AS3635
Datasheet - Application Information
Photoflash Capacitor CFLASH
The photoflash capacitor stores the energy for the flash. Its capacitance define the maximum available energy. Using
higher value capacitors as shown in Table 6 is possible, but will increase the charging time.
It is recommended to use low ESR capacitors to avoid loosing power during flash (it is also possible to connect two
capacitors in parallel to reduce ESR):
Table 6. Recommended Photoflash Capacitors
Voltage
rating
Component
Part Number
Capacitor
Size
Manufacturer
Cylinder
2 x l=24mm,
d=7mm
Rubycon
www.rubycon.co.jp
2x13.5µF1
330FW13A6.3X20
330V
CFLASH
1. Different capacitor values are possible to be used together with the AS3635. Lower capacitor value will reduc
charging time, lower ESR capacitor will improve light output energy and reduce losses in the capacitor during
the flash pulse.
Photoflash Charger rectification diode DCHARGE
The rectification diode should have very low parasitic capacitanc5 anas to withstand the oprating current and
reverse voltages.
Table 7. Recommended Rectification Diodes
Parasitic ltage
Component
Part Number
FVO2R80
GSD2004S
BAS1
Sie
Manufacturer
Capacitor
ting
Origin
www.origin.co.jp
p
800V
25x25mm
Vishay
www.vishay.com
SOT-23
2.4x3.0mm
5pF / 2
5pF / 2
2x240V
2x50V
DCHARGE
OnSemi
www.onsemi.com
SC-70
2.0x2.1mm
Supply Capacitor CVBAT and charge pump capacitor CV5V
Low ESR capacitors should be used to minimize VAT ipple. Multi-layer ceramic capacitors are recommended since
they have extremely low ESR and are avaiable in small footprints. The capacitor should be located as close to the
device as possible.
X5R dielectric material is recommendedto their ability to maintain capacitance over wide voltage and temperature
range.
Table 8. Recommended CVBAT anC5V Capacitor
Rated
Component
Prt Number
C
TC Code
X5R
Size
0402
0402
0603
Manufacturer
Voltage
GRM155R60J474
470nF
1µF
6.3V
CV5V
GRM155R60J105
GRM155R61A105
6.3V
10V
Murata
www.murata.com
X5R
GRM188R60J475
4.7µF
X5R
6.3V
CVBAT
f different output capacitor is chosen, ensure low ESR values and voltage ratings.
5. A low parasitic capacitance improves charging efficiency.
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1.4-8
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AS3635
Datasheet - Application Information
PCB Layout Guideline
Following layout recommendations apply:
1. Keep the path (and area) of GND - CVBAT - VBAT - TCHARGE(primary) - SW - GND as short as possible to min-
imize the leakage inductance of TCHARGE and ensure a proper supply connection for the AS3635
2. Place CVBAT as close as possible to the AS3635.
3. Ensure wide and short PCB paths for the path GND - CFLASH - XFLASH - QIGBT - GND to allow 150A to flow dur-
ing the flash pulse. Connect this GND only at a single place to the main GND plane.
4. The IGBT has two ground connections: One ground for the driving input and one ground for the power path.
5. Ensure larger spacings for all high voltage paths; check with the PCB manufacturer to ensure proper minimum
spacing for 320V paths and 4kV (Xenon tube trigger pin) paths.
6. Minimize the parasitic capacitance of the PCB on the anode of DCHARGE especially to GND and VFLASH
7. See austriamicrosystems “WLP-CSP-Handling-Guidelines_1V0.pdf” for proper handling, PCB layout ad s
dering of the WL-CSP AS3635 device.
See austriamicrosystems demoboard layout (described in application note ‘AN3635’).
www.austriamicrosystems.com/AS3635
1.4-8
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AS3635
Datasheet - Package Drawings and Markings
10 Package Drawings and Markings
Figure 22. 9 pin WL-CSP 1.5x1.5mm Marking
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3635
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Line 2:
Line 3:
austriamicrosystems logo
3635 and version code (e.g. ‘A’ or ‘B’)
<Code>
Encoded Datecode (4 characters)
Figure 23. 9 pin WL-CSP 1.5x1.5mm Package Dimension
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www.austriamicrosystems.com/AS3635
1.4-8
18 - 20
AS3635
Datasheet - Ordering Information
11 Ordering Information
The devices are available as the standard products shown in Table 9.
Table 9. Ordering Information
Order Code
Marking
Description
Delivery Form
Package
Xenon Flash Driver with 5V IGBT Control
9-pin WL-CSP
(1.5mm x 1.5mm)
RoHS compliant /
Green / Pb-Free
ISW (charging current peak) = 900mA
RIGBT_ON = 50Ω
AS3635B-
ZWLT
3635B
Tape & Reel
IIGBT_SINK = 15mA
IIGBT_BOOST = 46mA
VTRIP trimmed by customer
Xenon Flash Driver with 5V IGBT Control
9-pin WL-CS
(1.5mm x 1.5mm)
oHS compliant /
Gren / Pb-Free
ISW (charging current peak) = 900mA
RIGBT_ON = 15Ω
AS3635E-
ZWLT
3635E
Tape & Reel
IIGBT_SINK = 60mA
IIGBT_BOOST = 46mA
VTRIP trimmed by customer
Note: All products are RoHS compliant and austriamicrosystems gree
Buy our products or get free samples online at ICdrect: http://www.austriamicrosystems.com/ICdirect
Technical support is found at http://www.austriamicstems.com/Technicl-Support
For further information and requests, please contact s mailto:sales@autriamicrosystems.com
or find your local distributor at http://www.austriamicrosystems.com/dtributor
Note: AS3635-ZWLT
AS3635-
B, E Version Code - see Ta9 - ‘Description
Z
Temperature Range: -30ºC - 85ºC
WL Package: Wafer Level Chip Scale Package (WL-CSP) 1.5x1.5mm
Delivery Form: Tape & Reel
T
www.austriamicrosystems.com/AS3635
1.4-8
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AS3635
Datasheet - Ordering Information
Copyrights
Copyright © 1997-2011, austriamicrosystems AG, Schloss Premstaetten, 8141 Unterpremstaetten, Austria-Europe.
Trademarks Registered ®. All rights reserved. The material herein may not be reproduced, adapted, merged, trans-
lated, stored, or used without the prior written consent of the copyright owner.
All products and companies mentioned are trademarks or registered trademarks of their respective companies.
Disclaimer
Devices sold by austriamicrosystems AG are covered by the warranty and patent indemnification provisions appearing
in its Term of Sale. austriamicrosystems AG makes no warranty, express, statutory, implied, or by description regadin
the information set forth herein or regarding the freedom of the described devices from patent infringement. autria
crosystems AG reserves the right to change specifications and prices at any time and without notice. Therefre, prior
to designing this product into a system, it is necessary to check with austriamicrosystems AG for curent information.
This product is intended for use in normal commercial applications. Applications requiring extendetemperature
range, unusual environmental requirements, or high reliability applications, such as military, medical le-support or life-
sustaining equipment are specifically not recommended without adional processing by auramrosystems AG for
each application. For shipments of less than 100 parts the manufcturiflow might show deviaons from the standard
production flow, such as test flow or test location.
The information furnished here by austriamicrosystems Abelieved to be correct and accurate. However,
austriamicrosystems AG shall not be liable to recipient or ahird party for any dmages, including but not limited to
personal injury, property damage, loss of profits, loss of use, nterruption of busess indirect, special, incidental or
consequential damages, of any kind, in connection with or arising out of the rnishng, performance or use of the tech-
nical data herein. No obligation or liability to recipor any third party l arie or flow out of
austriamicrosystems AG rendering of technicl r other services.
Contact Information
Headquarters
austriamicrosysteAG
Tobelbaderstrsse 30
Schloss Premtaeten
A-8141 ria
Te+43 (0) 3136 500 0
Fax: 43 (0) 3136 525 01
For Sales Offices, Distributors and Representatives, please visit:
http://www.austriamicrosystems.com/contact
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