ATS266 [ANACHIP]
High Voltage Hall Effect Latch; 高压霍尔效应锁存
| 型号： | ATS266 |
| 厂家： | 
ANACHIP CORP |
| 描述： | High Voltage Hall Effect Latch |
| 文件： | 总6页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ATS266
High Voltage Hall Effect Latch
Features
General Description
- On-chip Hall plate
ATS266 is an integrated Hall sensor with output
drivers designed for electronic commutation of
brush-less DC motor applications. The device
includes an on-chip Hall voltage generator for
magnetic sensing, a comparator that amplifies the
Hall voltage, and a Schmitt trigger to provide
switching hysteresis for noise rejection, and
complementary darlington open-collector drivers for
sinking large current loads. An internal bandgap
regulator is used to provide temperature
compensated supply voltage for internal circuits and
allows a wide operating supply range.
- Operating voltage: 4V~28V
- Output current: 400mA(Continuous)
- Reverse protection diode only for chip reverse
(Note)
power connecting
- Output protection Zener breakdown Vz=56V(Typ)
- Package: SIP-4L
(Note)
Protection diode only exists at power pin(1,4) output, not
including pin (2,3).
If a magnetic flux density (B) is larger than operate
point (Bop), DO turn on (low) and DOB turn off
(high). The outputs state is latched prior to release
point (Brp) coming. if B< Brp, DO turn off and DOB
turn on. ATS266 is rated for operation over
temperature range from -20oC to 85 oC and voltage
range from 4.0V to 28V. The devices are available
in low cost die forms or rugged 4 pin SIP packages.
Application
- Dual-coil Brush-less DC Motor
- Dual-coil Brush-less DC Fan
- Revolution Counting
- Speed Measurement
Pin Assignment
Pin Configuration
4. GND
3. DOB
2. DO
Name
Description
VCC
DO
Positive Power Supply
Output Pin
1. VCC
DOB
GND
Output Pin
Ground
Ordering Information
ATS266 X - X X X - X
Magnetic
Packing
Blank : Tube
Wafer Body
Lead
Package
P: SIP-4L
Characteristics
Blank or
A or B
L : Lead Free
Blank: Normal
A~Z : if necessary
to specify
A
: Taping
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. A5 Mar 17, 2003
1/6
ATS266
High Voltage Hall Effect Latch
Block Diagram
vcc
1
DO
REG.
Hall
Plate
Amp
DOB
Application Circuit
266
coil1
coil2
1
2
3
4
Vcc
Brush-less DC Fan
Note: This application circuit can’t protect reverse coil current if power is connecting reverse.
Anachip Corp.
www.anachip.com.tw
2/6
Rev A5 Mar 17, 2003
ATS266
High Voltage Hall Effect Latch
Absolute Maximum Ratings (at Ta = 250C )
Parameter
Symbol
Rating
Unit
Supply voltage
VCC
Vout (off)
Io (con)
Io (hold)
Io (peak)
B
28
20
V
V
Output “OFF ” voltage
400
mA
mA
mA
Gauss
°C
Output “ON” current
500
700
Magnetic flux density
Unlimited
-20~+85
-65~+150
550
Operating temperature range
Storage temperature range
Power dissipation (Note)
Top
Tstg
PD
°C
mW
Note: See Performance Characteristic for other conditions
Electrical Characteristics ( Ta = 25°C )
Characteristic
Supply Voltage
Symbol
Conditions
Min
Typ
－
Max
Unit
－
Vcc
Vz
4.0
－
－
－
－
－
－
－
28
－
V
V
V
µA
mA
µs
µs
µs
Output Zener Breakdown
Output Saturation Voltage
Output Leakage Current
Supply Current
Output Turn off
56
Vce(sat) Vcc=14V, Ic=400mA
1.0
< 0.1
10
1.5
10
15
5
1.5
10
Icex
Icc
Tr
tf
∆t
Vce=14V, Vcc=14V
Vcc=20V, Output Open
Vcc=14V, RL=820Ω, CL=20pF
Vcc=14V, RL=820Ω, CL=20pF
Vcc=14V, RL=820Ω, CL=20pF
Output Rise Time
1.0
1.0
3.0
Output Falling Time
Switch Time Differential
Test Circuit
14V
266
Vout1(DO)
RL1
RL2
Vout2(DOB)
CL2
CL1
RL1=RL2=820 Ohm
CL1=CL2=20 pF
Anachip Corp.
www.anachip.com.tw
Rev A5 Mar 17, 2003
3/6
ATS266
High Voltage Hall Effect Latch
Magnetic Characteristics (Ta=+25oC)
(1mT=10Gauss)
A grade
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Operate Point
Bop
Brp
Bhy
10
-70
-
-
-
80
70
-10
-
Gauss
Gauss
Gauss
Release Point
Hysteresis
B grade
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Operate Point
Release Point
Hysteresis
Bop
Brp
Bhy
-
-100
-
-
-
80
100
-
-
Gauss
Gauss
Gauss
DOB
DO
Turn on
Bhys
Turn off
Turn off
Bhys
Turn on
Vsat
Vsat
Bop
Bop
Brp
Bop
0
0
Magnetic Flux Density in Gauss
Magnetic Flux Density in Gauss
Performance Characteristics (SIP4)
Ta (°C)
25 50 60 70 80 85 90 95 100
105
110
115
120
Pd (mW) 550 440 396 352 308 286 264 242 220
198
176
154
132
Power Dissipation Curve
Pd (m W )
600
500
400
300
200
100
0
25
50
75
100
125
150
Ta (。 C)
85
Anachip Corp.
www.anachip.com.tw
Rev A5 Mar 17, 2003
4/6
ATS266
High Voltage Hall Effect Latch
Operation Characteristics
DO
V
cc
S
V
d
High
Marking side
B
hy
Low
N
V
sat
B
rp
B
op
( SIP4 )
0
( Magnetic flux density )
Marking Information
( Top View )
Blank : normal
Part Number
266
L : Lead Free Package
X XX X X
ID Code: Blank or A ~ Z
Nth week: 01~52
Year:"1" = 2001
"2" = 2002
Anachip Corp.
www.anachip.com.tw
Rev A5 Mar 17, 2003
5/6
ATS266
High Voltage Hall Effect Latch
Package Information
Active Area Depth
Package Sensor Location
Marking side
1.75mm
1.35mm
1
2
3
4
0.7mm
Package Dimension
5o
o
-7
14.25mm
+/-1.25mm
1.55mm
+/-0.1mm
0.38mm
3o-5o
1.03mm
+/-0.1
+/-0.03mm
3.65mm
+/-0.1mm
0.30mm
+/-0.1mm
0.38mm
0.46mm
+/-0.03mm
+/-0.03mm
o
5o
3o-5o
-7
1.27mm
+/-0.03mm
0.2mm Max.
1.42mm+/-0.1mm
Anachip Corp.
www.anachip.com.tw
Rev A5 Mar 17, 2003
6/6
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