AM3902N [ANALOGPOWER]
Dual N-Channel Logic Level MOSFET; 双N沟道逻辑电平MOSFET型号: | AM3902N |
厂家: | ANALOG POWER |
描述: | Dual N-Channel Logic Level MOSFET |
文件: | 总5页 (文件大小:239K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Analog Power
AM3902N
Dual N-Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
4.0 @ VGS = 4.5 V
5.1 @ VGS = 2.5V
ID (A)
0.4
25
0.2
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
Low rDS(on) provides higher efficiency and
extends battery life
1
2
3
6
5
4
•
Low thermal impedance copper leadframe
TSOP-6 saves board space
•
•
Fast switching speed
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
25
V
-8.5
TA=25oC
TA=70oC
0.22
0.17
0.5
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
IDM
IS
A
±0.3
0.9
TA=25oC
TA=70oC
PD
W
0.7
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
t <= 5 sec
Steady-State
140
180
Maximum Junction-to-Ambienta
oC/W
RΤΗ
JA
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM3902_B
PRELIMINARY
Analog Power
AM3902N
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Min Typ Max
Parameter
Symbol
Test Conditions
Unit
Switch Off Characteristics
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 uA
VDS = VGS, ID = -250 uA
VDS = 0 V, VGS = 8 V
25
V
0.67
0.85
1.5
100
1
Gate-Body Leakage
nA
uA
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55oC
IDSS
Zero Gate Voltage Drain Current
10
Switch On Characteristics
On-State Drain CurrentA
ID(on)
VDS = 5 V, VGS = 2.5 V
VGS = 2.5 V, ID = 0.2 A
VGS = 2.5 V, ID = 0.2 A TJ = 55oC
VGS = 4.5 V, ID = 0.4 A
0.2
A
3.8
4.0
3.1
5.0
5.5
4.0
Drain-Source On-ResistanceA
rDS(on)
Ω
Forward TranconductanceA
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
gfs
VDS = 5 V, ID = 0.4 A
IS = 0.5 A, VGS = 0 V
0.25
0.85
S
VSD
1.20
0.71
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
0.5
0.22
0.07
10
VDS = 5 V, VGS = 4.5 V, ID = 0.2 A
nC
pF
VDS = 15 V, VGS = 0 V,
f = 1MHz
6
2
Turn-On Delay Time
Rise Time
td(on)
tr
td(off)
tf
5
10
10
8
V
DD = 6 V,
ID = 0.5 A,
4.5
4
ns
VGEN = 4.5 V, RG = 50 Ω
Turn-Off Delay Time
Fall-Time
3.2
7
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of
the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential
or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products
are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal
injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall
indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an
Equal Opportunity/Affirmative Action Employer.
2
Publication Order Number:
DS-AM3902_B
PRELIMINARY
Analog Power
AM3902N
Typical Electrical Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Publication Order Number:
DS-AM3902_B
PRELIMINARY
Analog Power
AM3902N
Typical Electrical Characteristics
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
Normalized Thermal Transient Junction to Ambient
Figure 11. Transient Thermal Response Curve
4
Publication Order Number:
DS-AM3902_B
PRELIMINARY
Analog Power
AM3902N
Package Information
TSOP-6: 6LEAD
5
Publication Order Number:
DS-AM3902_B
PRELIMINARY
相关型号:
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