AM40N04-20D [ANALOGPOWER]

N-Channel 40-V (D-S) MOSFET; N通道40 -V (D -S )的MOSFET
AM40N04-20D
型号: AM40N04-20D
厂家: ANALOG POWER    ANALOG POWER
描述:

N-Channel 40-V (D-S) MOSFET
N通道40 -V (D -S )的MOSFET

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中文:  中文翻译
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Analog Power  
AM40N04-20D  
N-Channel 40-V (D-S) MOSFET  
PRODUCT SUMMARY  
Key Features:  
rDS(on) (mΩ)  
VDS (V)  
40  
ID(A)  
39  
Low rDS(on) trench technology  
Low thermal impedance  
Fast switching speed  
22 @ VGS = 10V  
27 @ VGS = 4.5V  
36  
Typical Applications:  
White LED boost converters  
Automotive Systems  
Industrial DC/DC Conversion Circuits  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
40  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
±20  
Continuous Drain Current a  
TA=25°C  
TA=25°C  
39  
A
Pulsed Drain Current b  
IDM  
100  
Continuous Source Current (Diode Conduction) a  
IS  
47  
A
Power Dissipation a  
PD  
50  
W
°C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
-55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum Units  
Maximum Junction-to-Ambient a  
Maximum Junction-to-Case  
RθJA  
40  
°C/W  
RθJC  
3
Notes  
a.  
Surface Mounted on 1” x 1” FR4 Board.  
b.  
Pulse width limited by maximum junction temperature  
© Preliminary  
1
Publication Order Number:  
DS_AM40N04-20D_1A  
Analog Power  
AM40N04-20D  
Electrical Characteristics  
Parameter  
Symbol  
Test Conditions  
Static  
Min  
Typ  
Max  
Unit  
VGS(th)  
IGSS  
VDS = VGS, ID = 250 uA  
VDS = 0 V, VGS = ±20 V  
VDS = 32 V, VGS = 0 V  
VDS = 32 V, VGS = 0 V, TJ = 55°C  
VDS = 5 V, VGS = 10 V  
VGS = 10 V, ID = 20 A  
VGS = 4.5 V, ID = 18 A  
VDS = 15 V, ID = 20 A  
IS = 23.5 A, VGS = 0 V  
Dynamic  
Gate-Source Threshold Voltage  
Gate-Body Leakage  
1
V
±100  
1
nA  
IDSS  
ID(on)  
Zero Gate Voltage Drain Current  
On-State Drain Current  
uA  
A
25  
39  
22  
27  
rDS(on)  
Drain-Source On-Resistance  
mΩ  
gfs  
Forward Transconductance  
Diode Forward Voltage  
25  
S
V
VSD  
0.96  
Qg  
Qgs  
Qgd  
td(on)  
tr  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
8
3.9  
3.8  
5
VDS = 20 V, VGS = 4.5 V,  
ID = 20 A  
nC  
ns  
VDS = 20 V, RL = 1 Ω,  
ID = 20 A,  
VGEN = 10 V, RGEN = 6 Ω  
5
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
20  
6
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
822  
76  
67  
VDS = 15 V, VGS = 0 V, f = 1 MHz  
pF  
Notes  
a. Pulse test: PW <= 300us duty cycle <= 2%.  
b. Guaranteed by design, not subject to production testing.  
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,  
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out  
of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,  
consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary  
in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  
customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL  
products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation  
where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application,  
Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,  
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated  
with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part.  
APL is an Equal Opportunity/Affirmative Action Employer.  
© Preliminary  
2
Publication Order Number:  
DS_AM40N04-20D_1A  
Analog Power  
AM40N04-20D  
Typical Electrical Characteristics  
0.05  
0.04  
0.03  
0.02  
0.01  
0
30  
TJ = 25°C  
24  
18  
12  
4V  
4.5V  
6V  
8V,10V  
6
0
0
1
2
3
4
5
6
7
0
5
10  
ID-Drain Current (A)  
1. On-Resistance vs. Drain Current  
15  
20  
25  
30  
VGS - Gate-to-Source Voltage (V)  
2. Transfer Characteristics  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0
100  
10  
TJ = 25°C  
ID = 20A  
TJ = 25°C  
1
0.1  
0.01  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
VSD - Source-to-Drain Voltage (V)  
VGS - Gate-to-Source Voltage (V)  
3. On-Resistance vs. Gate-to-Source Voltage  
4. Drain-to-Source Forward Voltage  
30  
24  
18  
12  
6
1400  
1200  
1000  
800  
600  
400  
200  
0
F = 1MHz  
10V,8V  
Ciss  
6V  
4.5V  
4V  
Coss  
Crss  
0
0
0.2  
0.4  
0.6  
0.8  
0
5
10  
15  
20  
VDS - Drain-to-Source Voltage (V)  
VDS-Drain-to-Source Voltage (V)  
5. Output Characteristics  
6. Capacitance  
© Preliminary  
3
Publication Order Number:  
DS_AM40N04-20D_1A  
Analog Power  
AM40N04-20D  
Typical Electrical Characteristics  
10  
2
VDS = 20V  
9
ID = 20A  
8
7
6
5
4
3
2
1
1.5  
1
0
0
0.5  
5
10  
15  
-50 -25  
0
25  
50  
75 100 125 150  
Qg - Total Gate Charge (nC)  
TJ -JunctionTemperature(°C)  
7. Gate Charge  
8. Normalized On-Resistance Vs  
Junction Temperature  
1000  
100  
10  
60  
50  
40  
30  
20  
10  
0
10 uS  
100 uS  
1 mS  
10 mS  
100 mS  
1 SEC  
10 SEC  
100 SEC  
DC  
1
0.1  
Idm limit  
Limited by  
RDS  
0.01  
0.1  
1
10  
100  
1000  
0.001 0.01  
0.1  
1
10  
100  
1000  
VDS Drain to Source Voltage (V)  
t1 TIME (SEC)  
9. Safe Operating Area  
10. Single Pulse Maximum Power Dissipation  
1
0.1  
D = 0.5  
0.2  
RθJA(t) = r(t) + RθJA  
RθJA = 40 °C /W  
0.1  
0.05  
0.02  
Single Pulse  
P(pk)  
t1  
t2  
0.01  
TJ - TA = P * RθJA(t)  
Duty Cycle, D = t1 / t2  
0.001  
0.0001  
0.001  
0.01  
0.1  
t1 TIME (sec)  
1
10  
100  
1000  
11. Normalized Thermal Transient Junction to Ambient  
© Preliminary  
4
Publication Order Number:  
DS_AM40N04-20D_1A  
Analog Power  
AM40N04-20D  
Package Information  
Note:  
1. All Dimension Are In mm.  
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall  
Not Exceed 0.10 mm Per Side.  
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Gate  
Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body.  
© Preliminary  
5
Publication Order Number:  
DS_AM40N04-20D_1A  

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