AM45N06-16D [ANALOGPOWER]
N-Channel 60-V (D-S) MOSFET; N通道60 -V （D -S ）的MOSFET
| 型号： | AM45N06-16D |
| 厂家： | 
ANALOG POWER |
| 描述： | N-Channel 60-V (D-S) MOSFET |
| 文件： | 总3页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Analog Power
AM45N06-16D
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
46
16 @ VGS = 4.5V
19 @ VGS = 2.5V
60
42
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
•
•
Fast switching speed
High performance trench technology
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
60
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
12
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
TC=25oC
TC=25oC
46
100
50
ID
A
IDM
IS
A
PD
W
oC
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
Maximum Units
oC/W
RθJA
RθJC
50
oC/W
3.0
Maximum Junction-to-Case
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM45N06-16_A
PRELIMINARY
Analog Power
AM45N06-16D
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Unit
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 12 V
1
V
100 nA
VDS = 48 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 55oC
1
IDSS
Zero Gate Voltage Drain Current
uA
25
On-State Drain CurrentA
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 2 A
VGS = 4.5 V, ID = 2 A
34
A
16
mꢀ
19
Drain-Source On-ResistanceA
rDS(on)
Forward TranconductanceA
Diode Forward Voltage
gfs
VDS = 15 V, ID = 2 A
IS = 2 A, VGS = 0 V
22
S
VSD
1.1
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
50
5
VDS = 15 V, VGS = 4.5 V,
ID = 2 A
nC
nS
10
6
VDD = 25 V, RL = 25 ꢀ , ID = 2 A,
6
VGEN = 10 V
Turn-Off Delay Time
Fall-Time
td(off)
tf
50
20
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
Publication Order Number:
DS-AM45N06-16_A
PRELIMINARY
Analog Power
AM45N06-16D
Package Information
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or
Gate Burrs Shall Not Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of
Mold Flash, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And
Bottom Of The Plastic Body.
3
Publication Order Number:
DS-AM45N06-16_A
PRELIMINARY
相关型号：
AM45W-8501515D-NST
DC/DC Converter; Product Weight (grams): 520; Input voltage min (V): 150; Input voltage max (V): 1500; Output voltage min: 15; Output voltage max: 15; Output voltage dual assymetric (y/n): Dual; Output Power (W): 45; Max Output current (A): 1.53; Efficiency (%): 78; Max Capacitive load (µF): 1500/470; Package type: Enclosed; Mounting: Screw terminal; W (in): 4.13; L (in): 5.69; H (in): 1.57; W (mm): 105; L (mm): 144.5; H (mm): 40; Min Operating temperature: -40; Max operating temperature (°C): 85; Isolation (VAC): 4000; EMC compliance 2: EN 55022 Class A; Case material: Metal; Application 1 (
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