VDD18LCTA [ANASEM]
Low voltage, Low power, 1% High detect accuracy CMOS Voltage Detector with Delay circuit; 低电压，低功耗， 1 ％的高检测精度的CMOS电压检测器与延时电路
| 型号： | VDD18LCTA |
| 厂家： | 
AnaSem Hong Kong Limited |
| 描述： | Low voltage, Low power, 1% High detect accuracy CMOS Voltage Detector with Delay circuit |
| 文件： | 总20页 (文件大小：1320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
安纳森
Analog Semiconductor IC
Low voltage, Low power, ±1% High detect accuracy
CMOS Voltage Detector with Delay circuit
(IMPORTANT: Please check the last page for Genuine Product Labeling)
Rev. E13-01
Website:
Tel:
www.anasemi.com
+852-3590-8442
Email:
sales@anasemi.com
AnaSem
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Rev. E13-01
Products Data Sheet
AnaSem
Analog Semiconductor IC
Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
VDD Series
GENERAL DESCRIPTIONS
The VDD series are delay circuit built-in voltage detectors with low
HALOGEN
voltage, low power consumption and high accuracy. The accuracy of the
detection voltage is detected based on a voltage reference of high
accuracy that the temperature coefficient is controlled. The detection
RoHS
voltage is made in high accuracy by using the laser trimming technology.
Because the delay circuit is built-in, delay time can be set without any
external components.
COMPLIANCE
FEATURES
1.8V~6.0V (selectable with a step of 0.1V)
Detection voltage range ····································
0.7V~6.0V
Operating voltage range ····································
±1% (VDET=1.8V~6.0V)
High accuracy detection voltage ·························
Typ. ±20ppm/°C (VDET=1.8V~6.0V)
Detection voltage temperature characteristics ········
S/10~50ms, M/50~200ms, L/80~400ms
Delay time ······················································
CMOS or N-channel open drain
Output types ···················································
Typ. 0.6µA (VIN=1.5V)
Low current consumption ··································
–40°C ~ +85°C
Operating temperature range ·····························
ò
ò
ò
ò
ò
ò
ò
ò
ò
SOT-23 (2.9×2.8×1.1mm)
Small package ················································
APPLICATIONS
ò
ò
ò
ò
ò
ò
Reset of microprocessor
Power-on reset of system
Charge detection of battery
Battery back-up of memory
Monitoring of battery life time
Delay circuit
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
PRODUCTS NUMBERING GUIDE
VDD
Design version
A : TOPR = –40°C ~ +85°C
T : SOT-23
Package form
Output type
C : CMOS output
N : N-channel open drain output
Delay time
S : 10msec~50msec
M : 50msec~200msec
L : 80msec~400msec
Detection accuracy rate
Detection voltage
1 : ±1%
18 ~ 60 : Selectable with a step of 0.1V
in the range of 1.8V ~ 6.0V
e.g.) 18 : 1.8V
30 : 3.0V
PIN CONFIGURATION / MARKING SPECIFICATION (SOT-23)
ò Pin Configuration
Vin
No.
1
Symbol
Descriptions
3
V
OUT
SS
IN
Output
2
V
Power ground
Voltage input
A B C D E
3
V
F
F F F
ò Marking Specification
2
1
Code
A
Mark
C or N
Contents
Vout
Vss
Output type
Detection voltage
Delay time
Version
(Top view)
BC
D
18~60
S, M or L
A
E
F
Internal rule
Lot number
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TYPICAL APPLICATION CIRCUITS
ò
CMOS output
ò
N-channel open drain output
100KΩ
V
OUT
VOUT
V
IN
VIN
V
SS
VSS
BLOCK DIAGRAM
ò
CMOS output
ò
N-channel open drain output
V
IN
V
IN
+
_
+
V
OUT
VOUT
Delay
circuit
Voltage
Reference
Voltage
Reference
_
Delay circuit
Vss
Vss
ABSOLUTE MAXIMUM RATINGS
Items
Input voltage range
Output current
Symbol
Ratings
–0.3 ~ +7.0
50
Unit
V
V
IN
OUT
OUT
I
mA
V
Output voltage range
V
V
SS –0.3 ~ VIN +0.3
Power dissipation ※1)
SOT-23
P
D
400
mW
°C
Operating temperature range
Storage temperature range
TOPR
–40 ~ +85
–55 ~ +125
T
STG
°C
Note :
※1) Power dissipation depends on conditions of mounting on boards.
PCB dimension is 50mm×50mm×1.6mm.
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
ELECTRICAL CHARACTERISTICS
(Ta=25°C unless otherwise specified)
Test
Items
Operating voltage
Detection voltage
Hysteresis range
Symbol
Conditions
Min.
0.7
Typ.
Max.
Unit
circuit
V
IN
V
V
DET = 1.8V ~ 6.0V
DET = 1.8V ~ 6.0V
-
6.0
V
1
V
DET
VDET
×1.01
V
DET
HYS
V
V
DET
DET
V
1
1
Ta = –40°C ~ +85°C
×0.99
V
DET
VDET
×0.08
V
V
×0.02
×0.05
V
V
V
V
V
V
V
V
V
V
V
V
V
IN=0.7V
0.1
0.4
-
mA
mA
mA
mA
mA
mA
mA
mA
µA
IN=1.0V
IN=2.0V
IN=3.0V
IN=4.0V
IN=5.0V
IN=6.0V
IN=6.0V
IN=1.5V
IN=2.0V
IN=3.0V
IN=4.0V
IN=5.0V
1.0
3.0
5.0
6.0
7.0
-
2.3
8.2
11.1
12.8
13.8
-9.5
9.5
0.6
0.7
0.8
0.9
1.0
10
-
-
N-ch
3
V
DS=0.5V
-
Output current
IOUT
-
-
CMOS P-ch
-1.5
-
4
3
V
DS=2.1V
CMOS N-ch
1.5
-
V
DS=2.1V
2.1
2.5
2.8
3.0
3.4
100
-
-
µA
Current consumption
I
SS
-
µA
2
-
µA
-
µA
Leak current
I
LEAK
V
V
IN=6.0V VOUT=6.0V
DET = 1.8V ~ 6.0V
-
nA
3
1
Detection voltage
temperature coefficient
∆VDET
/
-
±20
-
ppm/°C
ms
ms
ms
∆Ta•VDET Ta = –40°C ~ +85°C
10
50
80
50
200
400
Delay time
TDLY
V
IN = 0.7V ~ 6.0V
-
5
V
REL→VOUT inversion
-
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TEST CIRCUITS
ò
Circuit (1) – Operating voltage, Detection voltage, Hysteresis range, Detection voltage temperature coefficient
R
100KΩ *1)
V
IN
V
IN
V
OUT
V
V
SS
V
Note 1) :
The resistor (100KΩ) is not necessary for CMOS output products.
ò
Circuit (3) – N-ch driver output current
ò
Circuit (2) – Current consumption
A
V
IN
V
IN
V
IN
V
IN
V
OUT
A
V
OUT
V
SS
V
SS
V
DS
ò
Circuit (4) – P-ch driver output current
ò
Circuit (5) – Delay time (VREL→VOUT inversion)
100KΩ *1)
R
V
IN
VIN
V
DS
V
IN
A
V
OUT
VOUT
Measurement
of wave form
V
SS
VSS
Note 1) :
The resistor (100KΩ) is not necessary for CMOS output
products.
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
DESCRIPTION OF OPERATION
ò
General operation (CMOS Output)
In reference to following the block diagram of CMOS output VDD series ;
V
IN
+
_
Delay
Circuit
P-ch
N-ch
Voltage
Reference
V
OUT
Vss
A. When the input voltage (VIN) is higher than the release voltage (VREL), the input voltage (VIN) is
provided at the output terminal because N-ch transistor is OFF and the P-ch transistor is ON. And,
the output maintains the same level of input as long as the input voltage remains above the detection
voltage (VDET).
B. When the input voltage (VIN) falls below the
detection voltage (VDET), the N-ch transistor
is ON and the P-ch transistor is OFF. And,
the output voltage (VOUT) is same as ground
level (VSS).
[ TIMING CHART ]
Input voltage (VIN
)
Release voltage (VREL
)
C. When the input voltage (VIN) falls below the
min. operating voltage, the output becomes
unstable, or goes to VIN when the output is
Detection voltage (VDET
)
pulled up to VIN
.
Min. operating voltage
Power ground (VSS
)
D. When the input voltage (VIN) rises above the
minimum voltage, the ground voltage (VSS
)
level is maintained even though the input
voltage (VIN) rises above the detection
voltage (VDET) as long as it does not exceed
the release voltage (VREL) level.
Output voltage (VOUT
)
Release voltage (VREL
)
Detection voltage (VDET
)
)
E. Following delay time, the N-ch transistor
Hysteresis range (VHYS
becomes OFF when the input voltage (VIN
)
Delay time (TDLY
Min. operating voltage
Power ground (VSS
)
rises above the release voltage (VREL), and
the P-Ch transistor becomes ON. And, the
output voltage (VOUT) is equal to input
voltage (VIN). This difference between VDET
and VREL is hysteresis range (VHYS).
)
A B
C
D E
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TYPICAL CHARACTERISTICS – Supply Current vs. Input Voltage
ò VDD181SCTA (CMOS 1.8V)
ò VDD251SCTA (CMOS 2.5V)
V
IN=0V~6.0V, Step=0.2V
Ta=+85°C
V
IN=0V~6.0V, Step=0.2V
Ta=+85°C
3.0
3.0
2.5
2.0
1.5
1.0
0.5
0
2.5
2.0
1.5
Ta=+25°C
Ta=-40°C
Ta=+25°C
Ta=-40°C
1.0
0.5
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
Input Voltage : VIN (V)
Input Voltage : VIN (V)
ò VDD351SCTA (CMOS 3.5V)
ò VDD451SCTA (CMOS 4.5V)
V
IN=0V~6.0V, Step=0.2V
Ta=+85°C
V
IN=0V~6.0V, Step=0.2V
Ta=+85°C
3.0
2.5
2.0
3.0
2.5
2.0
Ta=+25°C
Ta=-40°C
Ta=+25°C
Ta=-40°C
1.5
1.0
1.5
1.0
0.5
0
0.5
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
Input Voltage : VIN (V)
Input Voltage : VIN (V)
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TYPICAL CHARACTERISTICS – Detect & Release Voltage vs. Ambient Temperature
ò VDD181SCTA (CMOS 1.8V)
ò VDD251SCTA (CMOS 2.5V)
V
IN=0V~6.0V, Step=10°C
VIN=0V~6.0V, Step=10°C
1.92
1.90
1.88
1.86
1.84
2.66
2.64
2.62
2.60
2.58
Release Voltage
Release Voltage
2.56
2.54
2.52
1.82
1.80
1.78
Detect Voltage
Detect Voltage
2.50
2.48
-50 -40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90
-50 -40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90
Ambient Temperature : Ta (°C)
Ambient Temperature : Ta (°C)
ò VDD351SCTA (CMOS 3.5V)
ò VDD451SCTA (CMOS 4.5V)
V
IN=0V~6.0V, Step=10°C
VIN=0V~6.0V, Step=10°C
4.80
4.75
4.70
4.65
4.60
4.55
3.75
3.70
3.65
3.60
Release Voltage
Release Voltage
3.55
3.50
3.45
Detect Voltage
Detect Voltage
4.50
4.45
-50 -40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90
-50 -40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90
Ambient Temperature : Ta (°C)
Ambient Temperature : Ta (°C)
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TYPICAL CHARACTERISTICS – Output Voltage vs. Input Voltage
ò VDD181SCTA (CMOS 1.8V)
ò VDD251SCTA (CMOS 2.5V)
Ta=25°C
Ta=25°C
2.5
3.0
VDET
VDET
VREL
VREL
2.5
2.0
1.5
2.0
1.5
1.0
1.0
0.5
0
0.5
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Input Voltage : VIN (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
Input Voltage : VIN (V)
ò VDD351SCTA (CMOS 3.5V)
ò VDD451SCTA (CMOS 4.5V)
Ta=25°C
Ta=25°C
4.0
5.0
V
V
DET
V
V
DET
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3.5
3.0
2.5
2.0
1.5
1.0
REL
REL
0.5
0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage : VIN (V)
Input Voltage : VIN (V)
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TYPICAL CHARACTERISTICS – N-ch Driver Output Current vs. VDS
ò VDD181SCTA (CMOS 1.8V)
ò VDD251SCTA (CMOS 2.5V)
Ta=25°C
Ta=25°C
1.2
1.2
1.1
1.0
1.1
1.0
VIN=0.8V
VIN=0.8V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
VIN=0.7V
VIN=0.7V
0
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
DS (V)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
DS (V)
V
V
ò VDD351SCTA (CMOS 3.5V)
ò VDD451MCTA (CMOS 4.5V)
Ta=25°C
Ta=25°C
1.2
1.1
1.0
1.2
1.1
1.0
V
IN=0.8V
VIN=0.8V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
VIN=0.7V
VIN=0.7V
0
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
DS (V)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
DS (V)
V
V
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TYPICAL CHARACTERISTICS – N-ch Driver Output Current vs. VDS (continued)
ò VDD251SCTA (CMOS 2.5V)
ò VDD181SCTA (CMOS 1.8V)
Ta=25°C
Ta=25°C
18.0
16.0
14.0
12.0
10.0
10.0
9.0
V
IN=2.0V
VIN=1.5V
8.0
7.0
6.0
5.0
4.0
V
IN=1.5V
8.0
6.0
4.0
2.0
0
V
IN=1.0V
3.0
2.0
1.0
0
V
IN=1.0V
0
0.5
1.0
1.5
2.0
2.5
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
DS (V)
V
DS (V)
V
ò VDD351SCTA (CMOS 3.5V)
ò VDD451MCTA (CMOS 4.5V)
Ta=25°C
Ta=25°C
40.0
35.0
30.0
25.0
20.0
15.0
60.0
50.0
40.0
30.0
VIN=4.0V
V
IN=3.0V
V
IN=3.5V
V
IN=2.5V
V
IN=3.0V
V
IN=2.0V
V
IN=2.5V
20.0
VIN=1.5V
10.0
5.0
0
V
IN=2.0V
10.0
0
VIN=1.0V
V
IN=1.5V
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
DS (V)
V
DS (V)
V
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TYPICAL CHARACTERISTICS – N-ch Driver Output Current vs. Input Voltage
ò VDD181SCTA (CMOS 1.8V)
ò VDD251SCTA (CMOS 2.5V)
V
DS=0.5V, VIN=0~VREL, Step=0.2V
V
DS=0.5V, VIN=0~VREL, Step=0.2V
12.0
12.0
10.0
8.0
6.0
4.0
2.0
0
Ta=+25°C
Ta=–40°C
Ta=+85°C
Ta=+25°C
Ta=–40°C
Ta=+85°C
10.0
8.0
6.0
4.0
2.0
0
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
3.0
Input Voltage : VIN (V)
Input Voltage : VIN (V)
ò VDD351SCTA (CMOS 3.5V)
ò VDD451SCTA (CMOS 4.5V)
V
DS=0.5V, VIN=0~VREL, Step=0.2V
VDS=0.5V, VIN=0~VREL, Step=0.2V
14.0
12.0
10.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0
Ta=+25°C
Ta=–40°C
Ta=+85°C
Ta=+25°C
Ta=–40°C
Ta=+85°C
8.0
6.0
4.0
2.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Input Voltage : VIN (V)
Input Voltage : VIN (V)
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TYPICAL CHARACTERISTICS – P-ch Driver Output Current vs. Input Voltage
ò VDD181SCTA (CMOS 1.8V)
Ta=25°C
10.0
9.0
8.0
7.0
6.0
V
V
V
DS=2.1V
DS=1.5V
DS=1.0V
5.0
4.0
3.0
2.0
VDS=0.5V
1.0
0
0
1
2
2
2
3
4
5
5
5
6
7
7
7
8
Input Voltage : VIN (V)
ò VDD251SCTA (CMOS 2.5V)
Ta=25°C
10.0
9.0
8.0
7.0
6.0
V
DS=2.1V
V
DS=1.5V
DS=1.0V
5.0
4.0
3.0
2.0
V
V
DS=0.5V
1.0
0
0
1
3
4
6
8
Input Voltage : VIN (V)
ò VDD351SCTA (CMOS 3.5V)
Ta=25°C
10.0
9.0
8.0
7.0
6.0
V
DS=2.1V
V
DS=1.5V
DS=1.0V
5.0
4.0
3.0
2.0
1.0
0
V
V
DS=0.5V
0
1
3
4
6
8
Input Voltage : VIN (V)
AnaSem
13
.......... Future of the analog world
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TYPICAL CHARACTERISTICS – Delay Time vs. Ambient Temperature
ò VDD221MCTA (CMOS 2.2V)
ò VDD271MCTA (CMOS 2.7V)
V
IN=0V~6.0V, Step=10°C
VIN=0V~6.0V, Step=10°C
200
180
160
140
120
200
180
160
140
120
100
80
100
80
60
60
V
V
IN=6.0V
IN=5.4V
V
V
IN=6.0V
IN=5.4V
40
20
40
20
-50 -40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90
-50 -40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90
Ambient Temperature : Ta (°C)
Ambient Temperature : Ta (°C)
ò VDD271SNTA (N-ch 2.7V)
ò VDD301MCTA (CMOS 3.0V)
V
IN=0V~6.0V, Step=10°C
VIN=0V~6.0V, Step=10°C
50
45
40
35
30
200
180
160
140
120
25
20
15
10
5
100
80
60
40
20
V
V
IN=6.0V
IN=5.4V
V
V
IN=6.0V
IN=5.4V
-50 -40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90
-50 -40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90
Ambient Temperature : Ta (°C)
Ambient Temperature : Ta (°C)
AnaSem
14
.......... Future of the analog world
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TYPICAL CHARACTERISTICS – Delay Time vs. Input Voltage
ò VDD221MCTA (CMOS 2.2V)
ò VDD271MCTA (CMOS 2.7V)
V
IN=2.36V~6.0V, Step=0.2V
V
IN=2.88V~6.0V, Step=0.2V
180
160
140
120
100
80
180
160
140
120
100
80
Ta=+25°C
Ta=–40°C
Ta=+85°C
Ta=+25°C
Ta=–40°C
Ta=+85°C
60
60
40
40
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Input Voltage : VIN (V)
Input Voltage : VIN (V)
ò VDD271SNTA (N-ch 2.7V)
ò VDD301MCTA (CMOS 3.0V)
V
IN=2.88V~6.0V, Step=0.2V
V
IN=3.2V~6.0V, Step=0.2V
50
180
45
40
35
30
25
20
15
10
160
140
120
100
80
Ta=+25°C
Ta=–40°C
Ta=+85°C
Ta=+25°C
Ta=–40°C
60
Ta=+85°C
40
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Input Voltage : VIN (V)
Input Voltage : VIN (V)
AnaSem
15
.......... Future of the analog world
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
PACKAGE DIMENSIONS (SOT-23)
(Unit : mm)
1.1~1.3
2.9±0.2
+0.10
0.4 –0.15
0.45
(Marked Side)
0~0.1
3~7°
+0.10
0.4 –0.15
+0.10
0.4 –0.15
0.16+–00..1150
0.95
1.9±0.2
0.95
2.9±0.2
Recommended land pattern
0.8
+0.10
0.4 –0.15
0.8
0.8
0.95
0.95
1.9
AnaSem
16
.......... Future of the analog world
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
TAPING AND LOADING SPECIFICATIONS (SOT-23)
(Unit : mm)
4.0±0.1
+0.1
–0
ø1.5
0.2±0.05
2.0±0.05
Mark
Mark
1.65 max.
4.0±0.1
3.35±0.1
ø1.05±0.05
Taping direction
REEL DIMENSIONS (SOT-23)
(Unit : mm)
90°
120°
2.0±0.5
9.0±0.5
(3,000 pcs / reel)
AnaSem
17
.......... Future of the analog world
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AnaSem
AnaSem may change the products described in this data sheet, or may discontinue production or services without
any notice in order to supply the best products through improve the design and performance. Customers are
recommended to obtain the latest data or information before placing orders in order to make sure the data or
information required is the newest. It is necessary for customers to fully understand the products described in this
data sheet and to use it in accordance with its specifications. The products described in this data sheet are not
intended to use for the apparatus which have influence on human lives due to the failure or malfunction of the
products. AnaSem Corp. is not responsible for any support to customer’s application, product design, software
performance, patent infringement or service. AnaSem Corp. does not disclose or imply a guarantee or description
about being licensed based on patents, copy-rights, circuit location license, or other intellectual properties
associated with the devices or combinations in which the products or service of AnaSem Corp. are used or can be
used, or which cover the methods. Customers should not export, directly or indirectly, any products without
obtaining required licenses and approvals in advance from appropriate government agencies.
AnaSem
Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector
Rev. E09-01
VDA Series
GENUINE PRODUCT LEGITIMATE LABEL DEFINITION
Green colored Circle “RoHS” Label
Other specific customized Labels
Ordinary Product Information Bar
Code
Our internal Outgoing Check Code 3
Our Internal QR Check Code 2
AnaSem Logo and Brand Name
(Black color Logo)
Our Internal Product Check Code 1
Genuine labels MUST include our
correct contact information as shown
AnaSem
www.anasemi.com
sales@anasemi.com
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