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5082-N105-ID000  AD4016M166VLB-5  5082-N106-AD000  5082-N106-AH000  5082-N106-EF000  5082-N106-EC000  5082-N106-FD000  5082-N106-DG000  5082-N106-GH000  5082-N106-AA000  
VDD25SCTA 低电压,低功耗, 1 %的高检测精度的CMOS电压检测器与延时电路 (Low voltage, Low power, 1% High detect accuracy CMOS Voltage Detector with Delay circuit)
.型号:   VDD25SCTA
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描述: 低电压,低功耗, 1 %的高检测精度的CMOS电压检测器与延时电路
Low voltage, Low power, 1% High detect accuracy CMOS Voltage Detector with Delay circuit
文件大小 :   1320 K    
页数 : 20 页
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品牌   ANASEM [ AnaSem Hong Kong Limited ]
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牧师E13-01
产品数据表
AnaSem
模拟半导体IC
低电压,低功耗,± 1 %的高检测精度,延时电路CMOS电压检测器
VDD系列
一般说明
在VDD系列被延迟电路内置的电压检测器与低
电压,低功耗和高精度。的精度
检测电压是基于对高的参考电压来检测
准确的温度系数进行控制。检测
电压是通过使用激光微调技术取得准确度高。
因为该延迟电路是内置的,延迟时间可以在没有任何设置
的外部元件。
卤素
RoHS指令
合规
特点
1.8V 〜 6.0V (可选
检测电压范围··································································以0.1V的步)
0.7V~6.0V
工作电压范围··································································
±1% (V
DET
=1.8V~6.0V)
高精度检测电压·····················································
典型值。 ± 20ppm的/ ° C( V
DET
=1.8V~6.0V)
检测电压温度特性··································································
S / 10 〜 50毫秒, M / 50 〜 200毫秒,
延迟时间························································································· L / 80 〜 400毫秒
CMOS和N沟道开漏
输出类型·························································································
典型值。 0.6μA (V
IN
=1.5V)
低电流消耗··································································
–40°C ~ +85°C
工作温度范围··································································
SOT- 23 ( 2.9 × 2.8 × 1.1毫米)
小型封装·························································································
应用
微处理器复位
上电系统的复位
充电检测电池
备用电池的记忆
电池续航时间监控
延迟电路
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