APM2055NUC-TRL [ANPEC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | APM2055NUC-TRL |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总10页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM2055NU
N-Channel Enhancement Mode MOSFET
Features
Pin Description
·
20V/10A ,
RDS(ON)=55mW (typ.) @ VGS=10V
RDS(ON)=75mW (typ.) @ VGS=4.5V
RDS(ON)=140mW (typ.) @ VGS=2.5V
G
D
S
·
·
·
Super High Dense Cell Design
Reliable and Rugged
TopViewof TO-252
D
Lead Free Available (RoHS Compliant)
Applications
G
·
Power Management in Desktop Computer or
DC/DC Converters
S
N-ChannelMOSFET
Ordering and Marking Information
Package Code
U : TO-252
Operating Junction Temp. Range
APM2055N
Lead Free Code
Handling Code
Temp. Range
Package Code
C : -55 to 150 °C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2055N U :
APM2055N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã ANPEC Electronics Corp.
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Rev. B.3 - Oct., 2005
APM2055NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
20
VDSS
VGSS
TJ
Drain-Source Voltage
V
±16
150
Gate-Source Voltage
°C
°C
A
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
3.5
TC=25°C
Mounted on Large Heat Sink
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
30
15
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
10*
ID
6
50
PD
Maximum Power Dissipation
W
20
2.5
Rq
Thermal Resistance-Junction to Case
°C/W
JC
Mounted on PCB of 1in2 Pad Area
TA=25°C
TA=100°C
TA=25°C
TA=100°C
TA=25°C
TA=100°C
30
15
2
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
ID
1
2.5
1
PD
Maximum Power Dissipation
W
Rq
Thermal Resistance-Junction to Ambient
50
°C/W
JA
Mounted on PCB of Minimum Footprint
TA=25°C
TA=100°C
TA=25°C
TA=100°C
TA=25°C
TA=100°C
30
15
2
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
ID
1
1.6
0.6
PD
Maximum Power Dissipation
W
Rq
Thermal Resistance-Junction to Ambient
75
°C/W
JA
Note:
* Current limited by bond wire.
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Rev. B.3 - Oct., 2005
APM2055NU
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM2055NU
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
20
V
m
VGS=0V, IDS=250 A
VDS=16V, VGS=0V
1
IDSS Zero Gate Voltage Drain Current
m
A
TJ=85°C
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
m
0.6
0.9
1.5
±100
70
V
VDS=VGS, IDS=250 A
VGS=±16V, VDS=0V
VGS=10V, IDS=12A
VGS=4.5V, IDS=6A
VGS=2.5V, IDS=2A
nA
55
75
a
RDS(ON) Drain-Source On-state Resistance
W
m
90
140
160
Diode Characteristics
a
VSD
Diode Forward Voltage
ISD=2A, VGS=0V
0.7
1.3
V
Dynamic Characteristics b
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
2.5
380
120
75
5
W
Input Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
8
23
24
5
W
VDD=10V, RL=10 ,
13
16
3
IDS=1A, VGEN=4.5V,
ns
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics b
W
RG=6
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
5.4
1.4
1.7
7
VDS=10V, VGS=4.5V,
IDS=12A
nC
Notes:
m
a : Pulse test ; pulse width£300 s, duty cycle£2%.
b : Guaranteed by design, not subject to production testing.
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Rev. B.3 - Oct., 2005
APM2055NU
Typical Characteristics
Drain Current
Power Dissipation
60
12
10
8
50
40
30
20
10
6
4
2
TC=25oC
0
TC=25oC,VG=10V
0
0
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140 160 180
Tj - JunctionTemperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
100
2
1
Duty = 0.5
1ms
0.2
0.1
10ms
10
100ms
1s
0.05
0.02
DC
0.1
0.01
1
Single Pulse
Mounted on 1in2 pad
qJA :50oC/W
TC=25oC
R
0.01
0.1
1E-4 1E-3 0.01 0.1
1
10
100
0.1
1
10
60
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
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Rev. B.3 - Oct., 2005
APM2055NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
30
200
180
160
140
120
100
80
VGS=5,6,7,8,9,10V
VGS=2.5V
25
20
15
10
5
4V
VGS=4.5V
VGS=10V
3V
2V
60
40
20
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
Transfer Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
30
25
20
15
10
5
IDS =250mA
Tj=125oC
Tj=-55oC
Tj=25oC
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
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Rev. B.3 - Oct., 2005
APM2055NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
30
10
2.2
VGS = 10V
2.0
IDS = 12A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Tj=150oC
Tj=25oC
0.2
RON@Tj=25oC: 55mW
0.0
1
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
700
600
500
400
300
200
VDS=15V
ID = 12A
Frequency=1MHz
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
100 Crss
0
0
4
8
12
16
20
0
2
4
6
8
10
12
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright ã ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
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APM2055NU
Package Information
TO-252(ReferenceJEDECRegistration TO-252)
E
A
b 2
C 1
L 2
D
H
L 1
L
b
C
e 1
D 1
A 1
E 1
Millimeters
Dim
Inches
Min.
Max.
2.39
1.27
0.89
5.461
0.58
0.58
6.22
Min.
Max.
0.094
0.050
0.035
0.215
0.023
0.023
0.245
A
A1
b
2.18
0.89
0.086
0.035
0.020
0.205
0.018
0.018
0.210
0.508
5.207
0.46
b2
C
C1
D
0.46
5.334
D1
E
5.2 REF
5.3 REF
0.205 REF
0.209 REF
6.35
6.73
0.250
0.265
E1
e1
H
3.96
9.398
0.51
0.64
0.89
5.18
0.156
0.370
0.020
0.025
0.035
0.204
0.410
10.41
L
L1
L2
1.02
0.040
0.080
2.032
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Rev. B.3 - Oct., 2005
APM2055NU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
°
°
3 C/second max.
3 C/second max.
Preheat
°
°
150 C
100 C
-
-
-
Temperature Min (Tsmin)
Temperature Max (Tsmax)
Time (min to max) (ts)
°
°
150 C
200 C
60-120 seconds
60-180 seconds
Time maintained above:
°
°
183 C
217 C
-
Temperature (TL)
Time (tL)
60-150 seconds
60-150 seconds
-
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
°
Time within 5 C of actual
10-30 seconds
20-40 seconds
Peak Temperature (tp)
Ramp-down Rate
°
°
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
°
Time 25 C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
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Rev. B.3 - Oct., 2005
APM2055NU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350
<2.5 mm
°
°
225 +0/-5 C
240 +0/-5 C
³
°
°
2.5 mm
225 +0/-5 C
225 +0/-5 C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
<1.6 mm
°
°
°
260 +0 C*
260 +0 C*
260 +0 C*
1.6 mm – 2.5 mm
°
°
°
245 +0 C*
260 +0 C*
250 +0 C*
³
°
°
°
245 +0 C*
2.5 mm
*Tolerance: The device manufacturer/supplier
including the stated classification temperature (this means Peak reflow temperature +0 C.
250 +0 C*
245 +0 C*
shall
assure process compatibility up to and
°
°
°
For example 260 C+0 C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
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Rev. B.3 - Oct., 2005
APM2055NU
Carrier Tape & Reel Dimensions (Cont.)
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
T1
16.4 + 0.3
-0.2
T2
W
16+ 0.3
- 0.1
P
E
330 3
100
2
13 0. 5
2
0.5
2.5 0.5
8
0.1 1.75 0.1
± ±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05
±
±
±
±
±
±
±
±
(mm)
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
TO- 252
16
13.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ã ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
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