APM3007NUC-TR [ANPEC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET型号: | APM3007NUC-TR |
厂家: | ANPEC ELECTRONICS COROPRATION |
描述: | N-Channel Enhancement Mode MOSFET |
文件: | 总11页 (文件大小:204K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APM3007NU
N-Channel Enhancement Mode MOSFET
Features
Pin Description
·
30V/50A,
RDS(ON)=5.5mW (typ.) @ VGS=10V
RDS(ON)=8.5mW (typ.) @ VGS=4.5V
G
D
·
Super High Dense Cell Design
S
·
·
Reliable and Rugged
TopViewof TO-252
Lead Free Available (RoHS Compliant)
D
Applications
·
Power Management in Desktop Computer or
DC/DC Converters
G
S
N-ChannelMOSFET
Ordering and Marking Information
Package Code
U : TO-252
Operating Junction Temp. Range
APM3007N
Lead Free Code
Handling Code
Temp. Range
Package Code
C : -55 to 150 C
Handling Code
°
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM3007N U :
APM3007N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã ANPEC Electronics Corp.
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Rev. B.2 - Oct., 2005
APM3007NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
30
±20
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
27
TC=25°C
Mounted on Large Heat Sink
TC=25°C
TC=100°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
100
75
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
50*
ID
30
50
PD
Maximum Power Dissipation
W
20
2.5
Rq
Thermal Resistance-Junction to Case
°C/W
JC
Mounted on PCB of 1in2 Pad Area
TA=25°C
TA=100°C
TA=25°C
TA=100°C
TA=25°C
TA=100°C
100
75
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
15
ID
10
2.5
PD
Maximum Power Dissipation
W
1
Rq
Thermal Resistance-Junction to Ambient
50
°C/W
JA
Mounted on PCB of Minimum Footprint
TA=25°C
TA=100°C
TA=25°C
TA=100°C
TA=25°C
TA=100°C
100
75
12
8
IDP
300µs Pulse Drain Current Tested
Continuous Drain Current
A
A
ID
1.6
0.6
PD
Maximum Power Dissipation
W
Rq
Thermal Resistance-Junction to Ambient
75
°C/W
JA
Note:
* Current limited by bond wire.
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Rev. B.2 - Oct., 2005
APM3007NU
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM3007NU
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
ID=11A, VDD=15V
30
mJ
V
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
30
m
VGS=0V, IDS=250 A
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
m
A
TJ=85°C
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
m
1
1.5
2
±100
7
V
VDS=VGS, IDS=250 A
VGS=±20V, VDS=0V
VGS=10V, IDS=40A
VGS=4.5V, IDS=20A
nA
5.5
8.5
a
RDS(ON) Drain-Source On-state Resistance
W
m
10
Diode Characteristics
a
VSD
Diode Forward Voltage
ISD=15A, VGS=0V
0.8
1.3
V
DynamicCharacteristicsb
RG
Ciss
Coss
Crss
td(ON)
Tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
1.1
2440
420
250
13
W
pF
Input Capacitance
VGS=0V,
VDS=25V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
20
15
66
28
W
VDD=15V, RL=15 ,
9
IDS=1A, VGEN=10V,
ns
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristicsb
43
W
RG=6
14
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
53
13
10
70
VDS=15V, VGS=10V,
IDS=40A
nC
Notes:
m
a : Pulse test ; pulse width£300 s, duty cycle£2%.
b : Guaranteed by design, not subject to production testing.
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Rev. B.2 - Oct., 2005
APM3007NU
Typical Characteristics
Drain Current
Power Dissipation
60
60
50
40
30
20
10
0
50
40
30
20
10
TC=25oC,VG=10V
TC=25oC
0
0
20 40 60 80 100 120 140 160 180
0
20 40 60 80 100 120 140 160 180
Tj - JunctionTemperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
300
100
Duty = 0.5
10ms
0.2
0.1
100ms
10
1
1s
0.1
0.05
DC
0.02
0.01
Mounted on 1in2 pad
qJA :50oC/W
Tc=25oC
R
Single Pulse
0.01
0.1
1E-4 1E-3 0.01 0.1
1
10
100
0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
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Rev. B.2 - Oct., 2005
APM3007NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
16
14
12
10
8
100
VGS=4,5,6,7,8,9,10V
90
80
70
60
50
40
VGS=4.5V
VGS=10V
6
3V
30
4
20
10
0
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80
100
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
Transfer Characteristics
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IDS =250mA
90
80
70
60
50
40
30
20
10
0
Tj=125oC
Tj=25oC
Tj=-55oC
0
1
2
3
4
5
6
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
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Rev. B.2 - Oct., 2005
APM3007NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
100
10
1
VGS = 10V
IDS = 40A
1.6
1.4
1.2
1.0
0.8
0.6
Tj=150oC
Tj=25oC
Tj=-55oC
RON@Tj=25oC: 5.5mW
0.4
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
10
4000
3500
3000
2500
2000
1500
1000
500
Frequency=1MHz
VDS=10V
IDS =40A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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Rev. B.2 - Oct., 2005
APM3007NU
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01W
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
V GS
RG
VDD
10%
tp
VGS
td(on) tr
td(off) tf
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Rev. B.2 - Oct., 2005
APM3007NU
Package Information
TO-252(ReferenceJEDECRegistration TO-252)
E
A
b 2
C 1
L 2
D
H
L 1
L
b
C
e 1
D 1
A 1
E 1
Millimeters
Dim
Inches
Min.
Max.
2.39
1.27
0.89
5.461
0.58
0.58
6.22
Min.
Max.
0.094
0.050
0.035
0.215
0.023
0.023
0.245
A
A1
b
2.18
0.89
0.086
0.035
0.020
0.205
0.018
0.018
0.210
0.508
5.207
0.46
b2
C
C1
D
0.46
5.334
D1
E
5.2 REF
5.3 REF
0.205 REF
0.209 REF
6.35
6.73
0.250
0.265
E1
e1
H
3.96
9.398
0.51
0.64
0.89
5.18
0.156
0.370
0.020
0.025
0.035
0.204
0.410
10.41
L
L1
L2
1.02
0.040
0.080
2.032
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Rev. B.2 - Oct., 2005
APM3007NU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
°
t 25 C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
°
°
3 C/second max.
3 C/second max.
Preheat
°
°
150 C
100 C
-
-
-
Temperature Min (Tsmin)
Temperature Max (Tsmax)
Time (min to max) (ts)
°
°
150 C
200 C
60-120 seconds
60-180 seconds
Time maintained above:
°
°
183 C
217 C
-
Temperature (TL)
Time (tL)
60-150 seconds
60-150 seconds
-
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
°
Time within 5 C of actual
10-30 seconds
20-40 seconds
Peak Temperature (tp)
Ramp-down Rate
°
°
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
°
Time 25 C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
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Rev. B.2 - Oct., 2005
APM3007NU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350
<2.5 mm
°
°
225 +0/-5 C
240 +0/-5 C
³
°
°
2.5 mm
225 +0/-5 C
225 +0/-5 C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
<1.6 mm
°
°
°
260 +0 C*
260 +0 C*
260 +0 C*
1.6 mm – 2.5 mm
°
°
°
245 +0 C*
260 +0 C*
250 +0 C*
³
°
°
°
245 +0 C*
2.5 mm
*Tolerance: The device manufacturer/supplier
including the stated classification temperature (this means Peak reflow temperature +0 C.
250 +0 C*
245 +0 C*
shall
assure process compatibility up to and
°
°
°
For example 260 C+0 C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
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Rev. B.2 - Oct., 2005
APM3007NU
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
T1
16.4 + 0.3
-0.2
T2
W
16+ 0.3
- 0.1
P
E
330 3
100
2
13 0. 5
2
0.5
2.5 0.5
8
0.1 1.75 0.1
± ±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05
±
±
±
±
±
±
±
±
(mm)
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
TO- 252
16
13.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ã ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
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