APM3054N [ANPEC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | APM3054N |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总12页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM3054N
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
30V/15A, RDS(ON)=48mΩ(typ.) @ VGS=10V
RDS(ON)=75mΩ(typ.) @ VGS=4.5V
Super High Dense Cell Design
•
•
•
1
2
3
1
2
3
High Power and Current Handling Capability
TO-252 and SOT-223 Package
G
D
S
G
D
S
Top View of SOT-223
Top View of TO-252
Applications
1
2
3
•
•
Switching Regulators
Switching Converters
G
D
S
Top View of SOT-89
Ordering and Marking Information
Package C ode
APM3054N
D : SO T-89
U : TO -252
V : SO T-223
Handling C ode
Tem p. R ange
Package C ode
O perating Junction Tem p. Range
°
C : -55 to 125
Handling C ode
C
TR : Tape & R eel
- D ate Code
XX XXX
XX XXX
AP M 3054N U :
AP M 3054N
XX XXX
AP M 3054N
XX XXX
AP M 3054N D/V :
-
Date C ode
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID
Parameter
Rating
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
±20
15
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
Diode Continuous Forward Current
A
A
IDM
30
IS
8
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
1
www.anpec.com.tw
APM3054N
Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Diode Maximum Pulse Current
Rating
32
Unit
ISM
A
TO-252
SOT-223
TO-252
62.5
TA=25°C
W
W
3
25
PD
Maximum Power Dissipation
TA=100°C
SOT-223
1.2
150
°C
°C
TJ
Maximum Junction Temperature
Storage Temperature Range
TSTG
-55 to 150
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM3054N
Typ.
Symbol
Parameter
Test Condition
Unit
Min.
Max.
Static
Drain-Source Breakdown
Voltage
BVDSS
30
V
V =0V, I =250 A
µ
GS
DS
Zero Gate Voltage Drain
Current
IDSS
VDS=24V, VGS=0V
V =V , I =250 A
1
3
A
µ
VGS(th) Gate Threshold Voltage
1
V
µ
DS
GS DS
IGSS
Gate Leakage Current
nA
V = 20V, V =0V
±
GS
DS
100
54
±
VGS=10V, IDS=12A
VGS=4.5V, IDS=6A
ISD=8A, VGS=0V
48
75
Drain-Source On-state
Resistance
RDS(ON)
m
Ω
90
VSD
Dynamic
Qg
Diode Forward Voltage
0.6
1.3
V
Total Gate Charge
9
VDS=15V, VGS=5V,
IDS=10A
Qgs
Gate-Source Charge
5.4
nC
Qgd
td(ON)
tr
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer
2.4
11
17
VDD=15V,ID=2A,
ns
V =10V, R =6
td(OFF)
tf
Ω
37
GS
G
20
Ciss
400
75
VGS=0V
Coss
Crss
VDS=25V
pF
Frequency=1.0MHz
45
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
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APM3054N
Typical Characteristics
Output Characteristics
Transfer Characteristics
20
25
20
15
10
5
VGS=6,7,8,9,10V
TJ=-55°C
TJ=25°C
15
VGS=5V
TJ=125°C
10
VGS=4V
5
VGS=3V
0
0
0
2
4
6
8
10
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Temperature
On-Resistance vs. Drain Current
1.2
0.12
0.10
0.08
0.06
0.04
0.02
0.00
IDS=250uA
1.1
1.0
0.9
0.8
0.7
0.6
VGS=4.5V
VGS=10V
-50 -25
0
25 50 75 100 125 150
0
2
4
6
8
10
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
3
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APM3054N
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
0.10
0.35
VGS=10V
ID=6A
0.09 ID=12A
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
-50 -25
0
25
50
75 100 125 150
2
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
0.10
10
8
VGS=10V
IDS=12A
VDS=15V
IDS=10A
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
6
4
2
0
2.5
5.0
7.5
10.0
12.5
15.0
-50 -25
0
25
50
75 100 125 150
QG - Gate Charge (nC)
TJ - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
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APM3054N
Typical Characteristics
Capacitance
Source-Drain Diode Forward Voltage
750
30
10
625
500
Ciss
375
250
TJ=25°C
TJ=150°C
125
Coss
Crss
0
1
0
5
10
15
20
25
30
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS - Drain-to-Source Voltage (V)
VSD -Source-to-Drain Voltage (V)
Single Pulse Power
Single Pulse Power
TO-252
SOT-223
250
200
150
100
50
140
120
100
80
60
40
20
0
0
1E-3 0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
Time (sec)
Time (sec)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
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APM3054N
Typical Characteristics
Normalized Thermal Transient Impedence, Junction to Ambient
TO-252
1
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
0.1
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
0.01
1E-4
1E-3
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
SOT-223
1
0.1
Duty Cycle = 0.5
D= 0.2
D= 0.1
D= 0.05
D= 0.02
D= 0.01
0.01
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=42°C/W
3.TJM-TA=PDMZthJA
SINGLEPULSE
1E-3
1E-4
1E-3
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
6
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APM3054N
Package Information
SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62)
D
D1
a
E
H
1
2
3
L
C
B1
B
e
e1
A
a
Millimeters
Inches
Dim
Min.
Max.
1.60
0.56
0.48
0.44
4.60
1.83
Min.
0.055
0.016
0.014
0.014
0.173
0.053
Max.
0.063
0.022
0.019
0.017
0.181
0.072
A
B
B1
C
D
D1
e
e1
E
H
1.40
0.40
0.35
0.35
4.40
1.35
1.50 BSC
3.00 BSC
0.059 BSC
0.118 BSC
2.29
3.75
0.80
2.60
4.25
1.20
0.090
0.148
0.031
0.102
0.167
0.047
L
10
10
°
α
°
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
7
www.anpec.com.tw
APM3054N
Package Information
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
A1
Millimeters
Inches
Dim
Min.
2.18
0.89
0.508
5.207
0.46
0.46
5.334
6.35
3.96
9.398
0.51
0.64
0.89
Max.
Min.
Max.
0.094
0.050
0.035
0.215
0.023
0.023
0.245
0.265
0.204
0.410
A
A1
b
2.39
1.27
0.89
5.461
0.58
0.58
6.22
6.73
5.18
10.41
0.086
0.035
0.020
0.205
0.018
0.018
0.210
0.250
0.156
0.370
0.020
0.025
0.035
b2
C
C1
D
E
e1
H
L
L1
L2
1.02
0.040
0.080
2.032
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
8
www.anpec.com.tw
APM3054N
Package Information
SOT-223( Reference JEDEC Registration SOT-223)
D
A
a
B1
c
H
E
L
K
e
A1
e1
b
B
Dim
Millimeters
Inches
Min.
1.50
0.02
0.60
2.90
0.28
6.30
3.30
Max.
1.80
0.08
0.80
3.10
0.32
6.70
3.70
Min.
0.06
Max.
0.07
A
A1
B
B1
c
0.02
0.11
0.01
0.25
0.13
0.03
0.12
0.01
0.26
0.15
D
E
e
2.3 BSC
4.6 BSC
0.09 BSC
0.18 BSC
e1
H
L
6.70
0.91
1.50
7.30
1.10
2.00
0.26
0.04
0.06
0.29
0.04
0.08
K
0
10
0
10
°
α
°
°
°
13
13
°
β
°
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
9
www.anpec.com.tw
APM3054N
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
°
183 C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183 C to Peak)
3 C/second max.
°
10 C /second max.
°
°
120 seconds max
60 – 150 seconds
10 –20 seconds
Preheat temperature 125 ± 25 C)
Temperature maintained above 183 C
°
°
60 seconds
Time within 5 C of actual peak temperature
°
Peak temperature range
Ramp-down rate
220 +5/-0 C or 235 +5/-0 C 215-219 C or 235 +5/-0 C
°
°
°
°
6 C /second max.
10 C /second max.
°
°
6 minutes max.
Time 25 C to peak temperature
°
Package Reflow Conditions
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
pkg. thickness 2.5mm
and all bgas
≥
Convection 220 +5/-0 C
Convection 235 +5/-0 C
°
°
VPR 215-219 C
VPR 235 +5/-0 C
°
°
IR/Convection 220 +5/-0 C
IR/Convection 235 +5/-0 C
°
°
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
10
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APM3054N
Reliability test program
Test item
SO LD ER A BILITY
H O LT
PC T
TST
M ethod
D escription
M IL-STD -883D -2003
M IL-STD -883D -1005.7
JESD -22-B, A102
M IL-STD -883D -1011.9
M IL-STD -883D -3015.7
JESD 78
245 C , 5 S EC
°
1000 H rs Bias @ 125
C
°
168 H rs, 100 % R H , 121 C
°
-65 C ~ 150 C , 200 C ycles
VH B M > 2KV, VM M > 200V
10m s , Itr > 100m A
°
°
ESD
Latch-U p
Carrier Tape
t
D
P
Po
E
F
P1
Bo
W
Ko
Ao
D1
T2
J
C
A
B
T1
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
11
www.anpec.com.tw
APM3054N
A
B
C
J
T1
T2
W
P
E
Application
12 + 0.3
12 - 0.1
178 1
70
2
13.5 0.15 3 0.15
14
2
1.3 0.3
8
0.1
1.75 0.1
±
±
±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
SOT-89
5.5 0.05 1.5 0.1
1.5 0.1 4.0 0.1 2.0 0.1 4.8 0.1 4.5 0.1 1.80 0.1 0.3 0.013
±
±
±
±
±
±
±
±
±
A
B
C
J
T1
T2
W
P
E
Application
TO-252
16.4 + 0.3
-0.2
16+ 0.3
- 0.1
330 3
100
2
13 0. 5
2
0.5
2.5 0.5
8
0.1
1.75 0.1
±
±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05
±
±
±
±
±
±
±
±
A
B
C
J
T1
T2
W
P
E
Application
SOT-223
12.75
0.15
±
330 1
62 1.5
±
2
0.6
12.4 +0.2
2 0.2
±
12 0.3
8
0.1
1.75 0.1
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
5.5 0.05 1.5+ 0.1 1.5+ 0.1 4.0 0.1 2.0 0.05 6.9 0.1 7.5 0.1
2.1 0.1 0.3 0.05
± ±
±
±
±
±
±
Cover Tape Dimensions
Application
SOT- 89
SOT- 223
TO- 252
Carrier Width
Cover Tape Width
Devices Per Reel
12
12
16
9.3
9.3
13.3
1000
2500
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
12
www.anpec.com.tw
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