APM3055LUV [ANPEC]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | APM3055LUV |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM3055L
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
30V/12A, RDS(ON)=100mΩ(max) @ VGS=10V
RDS(ON)=200mΩ(max) @ VGS=4.5V
Super High Dense Cell Design
•
•
•
High Power and Current Handling Capability
TO-252 and SOT-223 Packages
1
2
3
1
2
3
G
D
S
G
D
S
Applications
Top View of TO-252
Top View of SOT-223
•
•
Switching Regulators
Switching Converters
Ordering and Marking Information
Package C ode
U : TO -252
O peration Junction Tem p. Range
APM3055L
V : SO T-223
Handling C ode
Tem p. R ange
Package C ode
°
C : -55 to 150
Handling C ode
C
TR : Tape & R eel
AP M 3055L
XX XXX
AP M 3055L U /V :
XX XXX
- Date C ode
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID
Parameter
Rating
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
±20
15
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
A
IDM
30
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
1
www.anpec.com.tw
APM3055L
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Maximum Power Dissipation
Rating
50
Unit
PD
TO-252
SOT-223
TO-252
T =25 C
°
A
3
W
20
T =100 C
°
A
SOT-223
1.2
150
TJ
Maximum Junction Temperature
Storage Temperature Range
C
C
°
°
TSTG
-55 to 150
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM3055L
Typ.
Symbol
Static
Parameter
Test Condition
Unit
Min.
Max.
BVDSS Drain-Source Breakdown
Voltage
V =0V, I =250 A
µ
GS
D
30
V
IDSS
Zero Gate Voltage Drain
Current
VGS(th) Gate Threshold Voltage
VDS=24V, VGS=0V
V =V , I =250 A
1
3
A
µ
µ
1
V
DS
GS
D
IGSS Gate Leakage Current
V = 20V, V =0V
±
nA
GS
DS
100
±
RDS(ON) Drain-Source On-state
Resistance
VGS=10V, ID=12A
VGS=4.5V, ID=6A
IS=6A, VGS=0V
75
100
200
1.3
m
Ω
100
VSD
Dynamic
Qg
Diode Forward Voltage
0.6
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Time
VDS=15V, VGS=10V,
ID=2A
8.5
1.1
1.8
12
40
Qgs
nC
ns
Qgd
tON
VDD=15V, ID=2A,
V =10V, R =6
Ω
td(ON)
tr
td(OFF)
tf
Turn-on Delay Time
Turn-on Rise Time
11
17
37
20
GS
G
Turn-off Delay Time
Turn-off Fall Time
Turn-off Time
tOFF
60
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
2
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APM3055L
Typical Characteristics
Output Characteristics
Transfer Characteristics
25
25
20
15
10
5
VGS = 10, 9, 8, 7, 6V
-55oC
20
VGS = 5V
+25oC
15
VGS = 4V
+125oC
10
VGS = 3V
5
0
0
0
1
2
3
4
0
1
2
3
4
5
6
VDS- Drain-to-Source Voltage (V)
VGS- Gate-to-Source Voltage (V)
Normalized VGS(th) v.s. TJ
Threshold Voltage v.s.TJ
1.2
1.1
1.0
0.9
0.8
0.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
IDS =250µA
IDS =250µA
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tj - Junction Temperature(oC)
Tj - Junction Temperature(oC)
On-Resistance v.s. Gate to Source Voltage
On-Resistance v.s. Junction Temperature
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
170
160
150
140
130
120
110
100
90
VGS =10V
IDS =12A
ID=10A
80
70
3
4
5
6
7
8
9
-50
-25
0
25
50
75
100
125
150
VGS- Gate Voltage (V)
TJ-Junction Temperature(oC)
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
3
www.anpec.com.tw
APM3055L
Typical Characteristics (Cont.)
Gate Charge
Capacitance
500
400
300
200
100
0
10
8
VDS=15V
IDS = 2A
6
Ciss
4
2
0
Coss
Crss
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
10
QG-Gate Charge(nC)
VDS- Drain-to-Source Voltage(V)
Source-Drain Diode Forward Voltage
Single Pulse Power Capability
50
40
30
20
10
0
10
TJ=150oC
TJ=25oC
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
1E-5
1E-4
1E-3
0.01
0.1
1
10
VSD- Source to Drain Voltage
Time (sec)
Normalized Thermal Transient Impedance, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
PDM
t 1
D=0.1
t 2
D=0.05
0.1
D=0.02
D=0.01
1. Duty Cycle , D=t1/t2
2.Per UnitBase=R =50°C/W
thJA
3. T -T =P
Z
JMADMthJA
4. SurfaceMounted
SINGLE PULSE
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration(sec)
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
4
www.anpec.com.tw
APM3055L
Package Information
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
A1
Millimeters
Inches
Dim
Min.
2.18
0.89
0.508
5.207
0.46
0.46
5.334
6.35
3.96
9.398
0.51
0.64
0.89
Max.
Min.
Max.
0.094
0.050
0.035
0.215
0.023
0.023
0.245
0.265
0.204
0.410
A
A1
b
2.39
1.27
0.89
5.461
0.58
0.58
6.22
6.73
5.18
10.41
0.086
0.035
0.020
0.205
0.018
0.018
0.210
0.250
0.156
0.370
0.020
0.025
0.035
b2
C
C1
D
E
e1
H
L
L1
L2
1.02
0.040
0.080
2.032
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
5
www.anpec.com.tw
APM3055L
Package Information
SOT-223( Reference JEDEC Registration SOT-223)
D
A
a
B1
c
H
E
L
K
e
A1
e1
b
B
Dim
Millimeters
Inches
Min.
1.50
0.02
0.60
2.90
0.28
6.30
3.30
Max.
1.80
0.08
0.80
3.10
0.32
6.70
3.70
Min.
0.06
Max.
0.07
A
A1
B
B1
c
0.02
0.11
0.01
0.25
0.13
0.03
0.12
0.01
0.26
0.15
D
E
e
2.3 BSC
4.6 BSC
0.09 BSC
0.18 BSC
e1
H
L
6.70
0.91
1.50
7.30
1.10
2.00
0.26
0.04
0.06
0.29
0.04
0.08
K
0
10
0
10
°
α
°
°
°
13
13
°
β
°
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
6
www.anpec.com.tw
APM3055L
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
°
183 C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183 C to Peak)
3 C/second max.
°
10 C /second max.
°
°
120 seconds max
60 – 150 seconds
10 –20 seconds
Preheat temperature 125 ± 25 C)
Temperature maintained above 183 C
°
°
60 seconds
Time within 5 C of actual peak temperature
°
Peak temperature range
Ramp-down rate
220 +5/-0 C or 235 +5/-0 C 215-219 C or 235 +5/-0 C
°
°
°
°
6 C /second max.
10 C /second max.
°
°
6 minutes max.
Time 25 C to peak temperature
°
Package Reflow Conditions
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
pkg. thickness 2.5mm
and all bgas
≥
Convection 220 +5/-0 C
Convection 235 +5/-0 C
°
°
VPR 215-219 C
VPR 235 +5/-0 C
°
°
IR/Convection 220 +5/-0 C
IR/Convection 235 +5/-0 C
°
°
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
7
www.anpec.com.tw
APM3055L
Reliability test program
Test item
SO LD ER A BILITY
H O LT
PC T
TST
M ethod
D escription
M IL-STD -883D -2003
M IL-STD -883D -1005.7
JESD -22-B, A102
M IL-STD -883D -1011.9
M IL-STD -883D -3015.7
JESD 78
245 C , 5 S EC
°
1000 H rs Bias @ 125
C
°
168 H rs, 100 % R H , 121 C
°
-65 C ~ 150 C , 200 C ycles
VH B M > 2KV, VM M > 200V
10m s , Itr > 100m A
°
°
ESD
Latch-U p
Carrier Tape
t
D
P
Po
E
F
P1
Bo
W
Ko
Ao
D1
T2
J
C
A
B
T1
A
B
C
J
T1
T2
W
P
E
Application
TO-252
16.4 + 0.3
-0.2
16+ 0.3
- 0.1
330 3
100
2
13 0. 5
2
0.5
2.5 0.5
8
0.1
1.75 0.1
±
±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.3 0.05
±
±
±
±
±
±
±
±
A
B
C
J
T1
T2
W
P
E
Application
SOT-223
12.75
0.15
±
330 1
62 1.5
±
2
0.6
12.4 +0.2
2 0.2
±
12 0.3
8
0.1
1.75 0.1
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
5.5 0.05 1.5+ 0.1 1.5+ 0.1 4.0 0.1 2.0 0.05 6.9 0.1 7.5 0.1
2.1 0.1 0.3 0.05
± ±
±
±
±
±
±
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
8
www.anpec.com.tw
APM3055L
Cover Tape Dimensions
Application
SOT- 223
TO- 252
Carrier Width
Cover Tape Width
Devices Per Reel
12
16
9.3
13.3
2500
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
9
www.anpec.com.tw
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