APM9930CK [ANPEC]
Dual Enhancement Mode MOSFET (N-and P-Channel); 双通道增强型MOSFET （N和P通道）
| 型号： | APM9930CK |
| 厂家： | 
ANPEC ELECTRONICS COROPRATION |
| 描述： | Dual Enhancement Mode MOSFET (N-and P-Channel) |
| 文件： | 总13页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APM9930/C
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
Pin Description
APM9930C
APM9930
•
•
•
N-Channel
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D
D
D
D
S1
G1
S2
G2
1
2
3
4
8
D1
D1
D2
D2
20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V
RDS(ON)=17mΩ(typ.) @ VGS=4.5V
RDS(ON)=25mΩ(typ.) @ VGS=2.5V
7
6
5
P-Channel
-20V/-5A, RDS(ON)=60mΩ(typ.) @ VGS=-10V
RDS(ON)=72mΩ(typ.) @ VGS=-4.5V
RDS(ON)=98mΩ(typ.) @ VGS=-2.5V
SO-8
SO-8
D
D 1
D 1
Super High Dense Cell Design for Extremely
Low RDS(ON)
•
•
Reliable and Rugged
G 1
G 1
G 2
SO-8 Package
S 1
S 1
S 2
N-Channel MOSFET
N- and P-Channel
MOSFET
Applications
S 2
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G 2
D 2
D 2
P-Channel MOSFET
Ordering and Marking Information
APM9930/C
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150 C
Handling Code
Handling Code
Temp. Range
Package Code
°
TR : Tape & Reel
APM9930/C
XXXXX
APM9930/C K :
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
1
www.anpec.com.tw
APM9930/C
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
Parameter
Drain-Source Voltage
N-Channel
P-Channel
Unit
20
±12
15
-20
±12
-5
V
VGSS
Gate-Source Voltage
*
ID
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
A
IDM
30
-10
2.5
2.5
T =25 C
°
A
W
PD
Maximum Power Dissipation
1.0
1.0
T =100 C
°
A
TJ
Maximum Junction Temperature
Storage Temperature Range
150
C
C
°
TSTG
RθjA
-55 to 150
50
°
Thermal Resistance – Junction to Ambient
C/W
°
* Surface Mounted on FR4 Board, t 10 sec.
≤
Electrical Characteristics (TA = 25°C unless otherwise noted)
APM9930/C
Symbol
Static
Parameter
Test Condition
Unit
Min. Typ. Max.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
-20
1
Drain-Source Breakdown
Voltage
BVDSS
V
V =0V , I =250 A
µ
GS
DS
VDS=18V , VGS=0V
VDS=-18V , VGS=0V
Zero Gate Voltage Drain
Current
IDSS
A
µ
-1
VDS=VGS , I =250 A
µ
DS
0.6
1.3
-1.3
±100
±100
15
VGS(th) Gate Threshold Voltage
V
VDS=VGS , I =-250 A
µ
DS
-0.6
V = 12V , V =0V
±
GS
DS
IGSS
Gate Leakage Current
nA
V = 10V , V =0V
±
GS
DS
VGS=10V , IDS=15A
VGS=4.5V , IDS=5A
VGS=2.5V , IDS=2A
VGS=-10V , IDS=-5A
VGS=-4.5V , IDS=-3.2A
VGS=-2.5V , IDS=-1A
12
17
25
60
72
98
N-Ch
P-Ch
20
Drain-Source On-state
Resistance
30
a
RDS(ON)
m
Ω
70
80
105
Notes
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
2
www.anpec.com.tw
APM9930/C
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
APM9930/C
Symbol
Parameter
Test Condition
ISD=5A , VGS=0V
Unit
Min. Typ. Max.
N-Ch
P-Ch
0.6
1.3
a
VSD
Diode Forward Voltage
V
ISD=-2A , VGS=0V
-0.6
-1.3
Dynamica
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
14
6.8
5
22
16
N-Channel
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
VDS=10V , IDS= 6A
VGS=4.5V
Qgs
Qgd
td(ON)
Tr
nC
P-Channel
3.6
2.8
1.08
6
VDS=-10V , IDS=-1A
VGS=-4.5V
12
42
10
85
40
80
20
40
N-Channel
VDD=10V , IDS=1A ,
21
VGEN=4.5V , R =10
Ω
5
G
45
ns
P-Channel
16
td(OFF)
Turn-off Delay Time
Turn-off Fall Time
VDD=-10V , IDS=-1A ,
36
VGEN=-4.5V , R =10
Ω
G
5
Tf
20
1225
495
330
130
220
60
Ciss
Coss
Crss
Input Capacitance
VGS=0V
Output Capacitance
Reverse Transfer Capacitance
VDS=15V
pF
Frequency=1.0MHz
Notes
a : Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
3
www.anpec.com.tw
APM9930/C
Typical Characteristics
N-Channel
Output Characteristics
Transfer Characteristics
20
20
15
10
5
VGS=3,4,5,6,7,8,9,10V
VGS=2.5V
16
12
8
TJ=125°C
VGS=2V
TJ=-55°C
4
TJ=25°C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.50
0.030
0.025
0.020
0.015
0.010
0.005
0.000
IDS=250uA
1.25
1.00
0.75
0.50
0.25
0.00
VGS=4.5V
VGS=10V
0
4
8
12
16
20
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
4
www.anpec.com.tw
APM9930/C
Typical Characteristics (Cont.)
N-Channel
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
0.16
2.0
ID=15A
VGS=10V
ID=15A
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50
75 100 125 150
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
10
8
1800
1500
1200
900
600
300
0
VDS=10V
ID=6A
Frequency=1MHz
Ciss
6
4
Coss
Crss
2
0
0
5
10
15
20
25
30
0
5
10
15
20
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
5
www.anpec.com.tw
APM9930/C
Typical Characteristics (Cont.)
N-Channel
Source-Drain Diode Forward Voltage
Single Pulse Power
80
70
60
50
40
30
20
10
0
20
10
TJ=150°C
TJ=25°C
1
0.1
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
D=0.02
SINGLE PULSE
0.01
1E-4
30
1E-3
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
6
www.anpec.com.tw
APM9930/C
Typical Characteristics
P-Channel
Output Characteristics
Transfer Characteristics
10
8
10
-VGS=4,5,6,7,8,9,10V
8
TJ=25°C
TJ=125°C
TJ=-55°C
6
6
-VGS=3V
4
4
2
0
2
0
0
2
4
6
8
10
0
1
2
3
4
5
-VDS - Drain-to-Source Voltage (V)
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.50
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
-IDS=250uA
1.25
1.00
0.75
0.50
0.25
0.00
-VGS=4.5V
-VGS=10V
-50 -25
0
25 50 75 100 125 150
0
1
2
3
4
5
6
Tj - Junction Temperature (°C)
-ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
7
www.anpec.com.tw
APM9930/C
Typical Characteristics (Cont.)
P-Channel
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
1.8
0.50
-VGS=10V
-ID=5A
-ID=5A
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
-VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
10
8
700
600
500
400
300
200
100
0
-VDS=10V
-ID=1A
Frequency=1MHz
Ciss
6
4
2
Coss
Crss
0
0
2
4
6
8
10
12
14
0
5
10
15
20
QG - Gate Charge (nC)
-VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
8
www.anpec.com.tw
APM9930/C
Typical Characteristics (Cont.)
P-Channel
Source-Drain Diode Forward Voltage
Single Pulse Power
10
80
60
40
20
0
1
TJ=150°C
TJ=25°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
30
-VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
9
www.anpec.com.tw
APM9930/C
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1
e2
D
A1
A
1
L
0.004max.
Millimeters
Inches
Dim
Min.
Max.
Min.
Max.
0.069
0.010
0.197
0.157
0.244
0.050
0.020
A
A1
D
1.35
0.10
4.80
3.80
5.80
0.40
0.33
1.75
0.25
5.00
4.00
6.20
1.27
0.51
0.053
0.004
0.189
0.150
0.228
0.016
0.013
E
H
L
e1
e2
1.27BSC
0.50BSC
1
8
8
°
φ
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
10
www.anpec.com.tw
APM9930/C
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
°
183 C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183 C to Peak)
3 C/second max.
°
10 C /second max.
°
°
120 seconds max
60 – 150 seconds
10 –20 seconds
Preheat temperature 125 ± 25 C)
Temperature maintained above 183 C
°
°
60 seconds
Time within 5 C of actual peak temperature
°
Peak temperature range
Ramp-down rate
220 +5/-0 C or 235 +5/-0 C 215-219 C or 235 +5/-0 C
°
°
°
°
6 C /second max.
10 C /second max.
°
°
6 minutes max.
Time 25 C to peak temperature
°
Package Reflow Conditions
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
pkg. thickness 2.5mm
and all bgas
≥
Convection 220 +5/-0 C
Convection 235 +5/-0 C
°
°
VPR 215-219 C
VPR 235 +5/-0 C
°
°
IR/Convection 220 +5/-0 C
IR/Convection 235 +5/-0 C
°
°
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
11
www.anpec.com.tw
APM9930/C
Reliability test program
Test item
SOLDERABILITY
Method
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
HOLT
PCT
TST
MIL-STD 883D-1011.9
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
SOP- 8
A
B
C
J
T1
T2
W
P
E
12.75+
0.15
330
1
62 +1.5
2
0.5 12.4 0.2
2
0.2
12 0. 3
8 0.1 1.75 0.1
± ±
±
±
±
±
±
F
D
D1
Po
P1
Ao
Bo
Ko
t
5.5
1
1.55 +0.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 5.2 0. 1 2.1 0.1 0.3 0.013
± ± ± ± ± ±
±
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
12
www.anpec.com.tw
APM9930/C
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
Cover Tape Width
Devices Per Reel
12
9.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
13
www.anpec.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明