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AO4821L

更新时间：2024-09-18 09:38:17
品牌：AOS
描述：Dual P-Channel Enhancement Mode Field Effect Transistor

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AO4821L 概述

Dual P-Channel Enhancement Mode Field Effect Transistor 双P沟道增强型场效应晶体管 MOS管 其他晶体管

AO4821L 规格参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：compliant风险等级：5.82

AO4821L 数据手册

通过下载AO4821L数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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AO4821  
Dual P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4821 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 1.8V. This  
device is suitable for use as a load switch or in PWM  
applications. It is ESD protected. Standard Product  
AO4821 is Pb-free (meets ROHS & Sony 259  
specifications). AO4821L is a Green Product ordering  
option. AO4821 and AO4821L are electrically  
VDS (V) = -12V  
ID = -8 A (VGS = -4.5V)  
RDS(ON) < 18mΩ (VGS = -4.5V)  
RDS(ON) < 22mΩ (VGS = -2.5V)  
RDS(ON) < 29mΩ (VGS = -1.8V)  
ESD Rating: 4KV HBM  
D1  
D2  
S2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
SOIC-8  
S1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-12  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±8  
-8  
V
A
TA=25°C  
TA=70°C  
ID  
-6.7  
Pulsed Drain Current B  
IDM  
-20  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation A  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
Max  
62.5  
110  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t ≤ 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
74  
Steady-State  
Steady-State  
RθJL  
35  
Alpha & Omega Semiconductor, Ltd.  
AO4821  
Electrical Characteristics (T =25°C unless otherwise noted)  
J
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=-250µA, VGS=0V  
-12  
V
VDS=-9.6V, VGS=0V  
-1  
IDSS  
Zero Gate Voltage Drain Current  
µA  
-5  
TJ=55°C  
µA  
µA  
VDS=0V, VGS=±4.5V  
VDS=0V, VGS=±8V  
VDS=VGS ID=-250µA  
±1  
±10  
-1  
IGSS  
Gate-Body leakage current  
VGS(th)  
ID(ON)  
Gate Threshold Voltage  
On state drain current  
-0.3  
-20  
-0.55  
V
GS=-4.5V, VDS=-5V  
A
VGS=-4.5V, ID=-8A  
14.8  
19  
18  
23  
22  
29  
mΩ  
TJ=125°C  
RDS(ON)  
Static Drain-Source On-Resistance  
mΩ  
mΩ  
S
VGS=-2.5V, ID=-8A  
VGS=-1.8V, ID=-5A  
VDS=-5V, ID=-8A  
IS=-1A,VGS=0V  
18.3  
22.4  
34  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
-0.74  
-1  
V
Maximum Body-Diode Continuous Current  
-2.5  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
3960  
910  
757  
6.9  
pF  
pF  
pF  
Ω
V
V
GS=0V, VDS=-6V, f=1MHz  
GS=0V, VDS=0V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
37  
4.4  
11  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=-4.5V, VDS=-6V, ID=-8A  
Gate Source Charge  
Gate Drain Charge  
Turn-On Delay Time  
15  
VGS=-4.5V, VDS=-6V, RL=0.75Ω,  
RGEN=3Ω  
Turn-On Rise Time  
43  
tD(off)  
tf  
Turn-Off Delay Time  
158  
95  
Turn-Off Fall Time  
trr  
IF=-8A, dI/dt=100A/µs  
IF=-8A, dI/dt=100A/µs  
63  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
nC  
Qrr  
56  
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The  
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance  
rating.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The  
SOA curve provides a single pulse rating.  
Rev2: August 2005  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE  
Alpha & Omega Semiconductor, Ltd.  
AO4821  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
20  
10  
VDS=-5V  
-8.0V  
8
15  
6
-1.5V  
10  
125°C  
4
25°C  
1.2  
5
2
VGS=-1.0V  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
0.2  
0.4  
0.6  
0.8  
-VGS(Volts)  
1
1.4  
-VDS (Volts)  
Figure 2: Transfer Characteristics  
Fig 1: On-Region Characteristics  
30  
25  
20  
15  
10  
1.6  
1.4  
1.2  
1.0  
0.8  
ID=-8A, VGS=-2.5V  
ID=-5A, VGS=-1.8V  
VGS=-1.8V  
VGS=-2.5V  
ID=-8, VGS=-4.5V  
VGS=-4.5V  
0
2
4
6
8
10  
0
25  
50  
75  
100  
125  
150  
175  
-ID (A)  
Temperature (°C)  
Figure 4: On-Resistance vs. Junction  
Temperature  
Figure 3: On-Resistance vs. Drain Current and  
Gate Voltage  
50  
1E+01  
1E+00  
1E-01  
1E-02  
1E-03  
1E-04  
1E-05  
45  
40  
35  
30  
25  
20  
15  
10  
125°C  
ID=-8A  
25°C  
125°C  
25°C  
0.0  
0.2  
0.4  
-VSD (Volts)  
Figure 6: Body-Diode Characteristics  
0.6  
0.8  
1.0  
0
2
4
6
8
-VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
Alpha & Omega Semiconductor, Ltd.  
AO4821  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
6400  
5
4
3
2
1
0
VDS=-10V  
ID=-8A  
5600  
4800  
4000  
3200  
2400  
1600  
800  
Ciss  
Coss  
Crss  
0
0
5
10 15 20 25 30 35 40 45  
0
5
10  
15  
20  
-Qg (nC)  
-VDS (Volts)  
Figure 7: Gate-Charge Characteristics  
Figure 8: Capacitance Characteristics  
100.0  
TJ(Max)=150°C  
40  
30  
20  
10  
0
TJ(Max)=150°C  
TA=25°C  
TA=25°C  
10µs  
100µs  
RDS(ON)  
limited  
10.0  
1.0  
1ms  
10ms  
1s  
0.1s  
10s  
1
DC  
0.1  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
10  
100  
Pulse Width (s)  
-VDS (Volts)  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note E)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note E)  
10  
1
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TA+PDM.ZθJA.RθJA  
RθJA=90°C/W  
PD  
0.1  
Ton  
T
Single Pulse  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance  
Alpha & Omega Semiconductor, Ltd.  

AO4821L 替代型号

型号 制造商 描述 替代类型 文档
AO4821 AOS Dual P-Channel Enhancement Mode Field Effect Transistor 完全替代

AO4821L 相关器件

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AO4822A (KO4822A) KEXIN Dual N-Channel MOSFET 获取价格
AO4822AL AOS Dual N-Channel Enhancement Mode Field Effect Transistor 获取价格
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