AO3400AL [AOS]
Transistor;
| 型号： | AO3400AL |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3400A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3400A/L uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. AO3400A and AO3400AL are electrically
identical.
V(V)=30V
DS
ID=5.7A(V =10V)
GS
R<26.5mΩ(VGS=10V)
DS(ON)
R<32mΩ(V=4.5V)
DS(ON)
GS
RDS(ON) < 48mΩ (VGS = 2.5V)
-RoHS Compliant
-AO3400AL is Halogen Free
Rg,Ciss,Coss,Crss Tested
TO-236
(SOT-23)
Top View
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current AF
±12
5.7
4.7
25
V
TA=25°C
TA=70°C
A
ID
Pulsed Drain Current B
IDM
A
TA=25°C
TA=70°C
1.4
0.9
PD
W
°C
Power Dissipation
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
100
63
125
80
Steady-State
Steady-State
RθJL
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3400A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
VDS=30V, VGS=0V
30
V
1
IDSS
Zero Gate Voltage Drain Current
uA
5
TJ=125°C
TJ=125°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=5.7A
100
1.5
nA
V
VGS(th)
ID(ON)
0.7
25
1
A
22
31
26.5
38
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS=4.5V, ID=5A
VGS=2.5V, ID=3A
VDS=5V, ID=5.7A
IS=1A,VGS=0V
25.4
34
32
48
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
26
S
V
A
0.72
1.0
2.0
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
900
88
1100
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
65
V
GS=0V, VDS=0V, f=1MHz
0.95
1.5
13
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10
1.8
3.75
3.2
3.5
21.5
2.7
16.8
8
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=15V, ID=5.7A
VGS=10V, VDS=15V, RL=2.6Ω,
R
GEN=3Ω
tD(off)
tf
trr
IF=5.7A, dI/dt=100A/us
IF=5.7A, dI/dt=100A/us
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
20
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F: The current rating is based on the t ≤ 10s thermal resistance rating.
Rev1:May. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
5
20
16
12
8
10V
4.5V
VDS=5V
3V
125°C
2.5V
25°C
4
VGS
=2V
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
VDS(Volts)
Figure 2: Transfer Characteristics
VGS(Volts)
Figure 1: On-Region Characteristics
60
55
50
45
40
35
30
25
20
15
1.8
1.5
ID=5A
V=4.5V
GS
VGS=2.5V
1.2
VGS=10V
ID=5.7A
VGS=4.5V
0.9
0.6
VGS=10V
50
0
5
10
15
20
75
-50 -25
0
25
100 125 150 175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature
60
1.0E+01
1.0E+00
ID=5.7A
50
40
30
1.0E-01
125°C
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
G
25°C
20
1.0E-05
1.0E-06
10
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1500
1200
900
600
300
0
VDS=15V
ID=5.7A
Ciss
Crss
C
oss
0
2
4
6
8
12
10
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure7:Gate-ChargeCharacteristics
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
40
TJ(Max)=150°C
10µs
T =25°C
RDS(ON)
A
30
20
limited
100µs
1ms
10ms
DC
100ms
10
0.10
TJ(Max)=150°C
TA=25°C
10s
0.1
0
0.01
0.001
0.01
1
10
100
0.01
0.1
1
10100
Pulse Width (s)
V
DS (Volts)
Figure 9: Maximum ForwardBiasedSafe
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Operating Area (Note E)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
1
P
D
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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