AO3705L [AOS]
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode; P沟道增强型场效应晶体管，肖特基二极管
| 型号： | AO3705L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 文件： | 总5页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3705
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO3705/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge. A Schottky
diode is provided to facilitate the implementation of a
bidirectional blocking switch, or for buck convertor
applications.
AO3705 and AO3705L are electrically identical.
-RoHs Complaint
-AO3705L is Halogen Free
VDS (V) = -20V
ID = -3.2A
(VGS = -4.5V)
RDS(ON) < 70mΩ (VGS = -4.5V)
RDS(ON) < 90mΩ (VGS = -2.5V)
RDS(ON) < 110mΩ (VGS = -1.8V)
RDS(ON) < 130mΩ (VGS = -1.5V)
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<0.45V@1A
D
SOT-23-5
Top View
K
1
2
3
5
4
G
S
A
D
K
G
S
A
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Schottky
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
-20
V
V
VGS
±8
TA=25°C
-3.2
ID
A
Continuous Drain Current
TA=70°C
A
-2.5
-25
Pulsed Drain Current B
IDM
VKA
Schottky reverse voltage
20
1
V
A
TA=25°C
TA=70°C
IF
IFM
Continuous Forward Current A
Pulsed Forward Current B
0.5
10
TA=25°C
TA=70°C
1.15
0.7
0.66
0.42
PD
W
°C
Power Dissipation
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
Max
Units
A
t ≤ 10s
Maximum Junction-to-Ambient
80.3
110
RθJA
A
Steady-State
Steady-State
°C/W
°C/W
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
117
43
150
80
RθJL
Thermal Characteristics Schottky
A
t ≤ 10s
Maximum Junction-to-Ambient
153
190
RθJA
RθJL
A
Steady-State
Steady-State
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
173
103
220
140
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3705
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
VDS=-20V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±8V
VDS=VGS ID=-250µA
GS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-3.2A
±100
-1
nA
V
VGS(th)
ID(ON)
-0.5
-25
-0.65
V
A
56
80
70
100
90
mΩ
TJ=125°C
mΩ
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
V
GS=-2.5V, ID=-2.8A
VGS=-1.8V, ID=-2A
GS=-1.5V, ID=-0.5A
70
85
110
130
V
100
15
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-3.2A
IS=-1A,VGS=0V
S
V
A
-0.7
-1
Maximum Body-Diode Continuous Current
-1.2
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
560
80
745
pF
pF
pF
Ω
V
GS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
VGS=0V, VDS=0V, f=1MHz
15
23
11
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
8.5
1.2
2.1
7.2
36
nC
nC
nC
ns
ns
ns
ns
ns
nC
VGS=-4.5V, VDS=-10V, ID=-3.2A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=-4.5V, VDS=-10V, RL=3Ω,
RGEN=6Ω
tD(off)
tf
Turn-Off DelayTime
53
Turn-Off Fall Time
56
trr
IF=-3.2A, dI/dt=100A/µs
IF=-3.2A, dI/dt=100A/µs
37
49
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Qrr
27
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1A
0.4
0.45
0.1
20
V
VR=16V
Irm
Maximum reverse leakage current
mA
VR=16V, TJ=125°C
CT
trr
Junction Capacitance
VR=10V
44
11
pF
ns
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
14
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
Qrr
2.5
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev1: May 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
20
VDS=-5V
-4.5V
-3.0V
-2.5V
15
10
5
-2.0V
VGS=-1.5V
125°C
25°C
2
0
0
0
1
2
-VDS (Volts)
Figure 1: On-Region Characteristics
3
4
5
0
0.5
1
1.5
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics
150
130
110
90
1.6
1.4
1.2
1
VGS=-
2.5V
VGS=-1.5V
VGS=-1.8V
VGS=-4.5V
ID=-3.5A
VGS=-1.5V
ID=-0.5A
VGS=-2.5V
VGS=-4.5V
8
70
50
0.8
0
2
4
6
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
180
160
140
120
100
80
1E+02
1E+01
ID=-3.2A
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
125°C
25°C
125°C
60
25°C
40
0
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO3435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1400
1200
1000
800
600
400
200
0
VDS=-10V
ID=-3.2A
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.00
10.00
1.00
1000
100
10
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µ
1ms
10ms
0.1s
1s
1
0.10
DC
TJ(Max)=150°C
T=25°C
0.1
0.01
0.00001
0.001
0.1
10
1000
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=150°C/W
1
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
AO3705
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
1
200
160
120
80
125°C
0.1
25°C
0.01
0.001
40
0
0
0.2
0.4
0.6
0.8
1
1.2
0
5
10
15
20
VF (V)
VKA (Volts)
Figure 12: Schottky Forward Characteristics
Figure 13: Schottky Capacitance Characteristics
10
1
0.42
0.39
0.36
0.33
0.30
0.27
0.24
IF=1A
VKA=20V
IF=0.5A
VKA=16V
0.1
0.01
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Temperature (°C)
Figure 15: Schottky Leakage Current vs.
Junction Temperature
10.000
1.000
0.100
0.010
0.001
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=220°C/W
PD
Ton
T
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
1
10
100
1000
10000
Alpha & Omega Semiconductor, Ltd.
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