AOB66920L [AOS]
Power Field-Effect Transistor,;
| 型号： | AOB66920L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：503K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT66920L/AOB66920L
100V N-Channel AlphaSGT TM
General Description
Product Summary
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
VDS
100V
80A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
• Logic Level Driving
• Excellent QG x RDS(ON) Product (FOM)
< 8mΩ
< 10.5mΩ
• Skipe Optimized Process
• RoHS and Halogen-Free Compliant
Applications
100% UIS Tested
100% Rg Tested
• High Frequency Switching and Synchronous
Rectification
TO-263
TO220
D2PAK
Bottom View
Top View
Top View
Bottom View
D
S
D
D
D
D
G
G
S
G
S
D
D
G
S
G
S
AOT66920L
AOB66920L
Orderable Part Number
AOT66920L
Package Type
TO-220
Form
Tube
Minimum Order Quantity
1000
AOB66920L
TO-263
Tape & Reel
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
100
±20
80
V
V
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
ID
TC=100°C
A
50
IDM
180
22.5
18
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
IDSM
A
IAS
38
A
C
Avalanche energy
L=0.1mH
TC=25°C
TC=100°C
TA=25°C
TA=70°C
EAS
72
mJ
100
40
PD
W
Power Dissipation B
Power Dissipation A
8.3
PDSM
W
5.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
15
60
RqJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
50
RqJC
1.0
1.25
Rev.1.0: December 2018
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Page 1 of 6
AOT66920L/AOB66920L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250mA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
100
V
VDS=100V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
μA
TJ=55°C
5
VDS=0V, VGS=±20V
VDS=VGS, ID=250mA
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.5
nA
V
VGS(th)
1.5
2.0
6.5
11.3
8.3
65
8.0
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
13.8
10.5
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A, VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.7
1
V
Maximum Body-Diode Continuous Current
80
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2500
485
13
pF
pF
pF
Ω
VGS=0V, VDS=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
f=1MHz
0.5
1.1
1.8
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Output Charge
35
16.7
8
50
25
nC
nC
nC
nC
nC
ns
VGS=10V, VDS=50V, ID=20A
VGS=0V, VDS=50V
Qgd
Qoss
tD(on)
tr
5
44
10
4
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=50V, RL=2.5W,
RGEN=3W
ns
tD(off)
tf
31
6
ns
ns
trr
IF=20A, di/dt=500A/ms
IF=20A, di/dt=500A/ms
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
34
ns
Qrr
nC
170
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2018
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Page 2 of 6
AOT66920L/AOB66920L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
120
100
80
60
40
20
0
10V
4.5V
6V
VDS=5V
4V
3.5V
125°C
25°C
VGS=3V
4
1
2
3
4
5
0
1
2
3
5
VGS (Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Figure 1: On-Region Characteristics (Note E)
12
10
8
2.2
2
VGS=4.5V
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1
6
VGS=4.5V
ID=20A
VGS=10V
4
0.8
2
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
Temperature (°C)
ID (A)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
20
15
10
5
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
125°C
125°C
25°C
25°C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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Rev.1.0: December 2018
Page 3 of 6
AOT66920L/AOB66920L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3500
VDS=50V
ID=20A
3000
2500
2000
1500
1000
500
8
Ciss
6
4
Coss
2
Crss
0
0
0
10
20
30
40
0
25
50
75
100
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
500
1000.0
100.0
10.0
1.0
TJ(Max)=150°C
TC=25°C
10ms
400
300
200
100
0
RDS(ON)
limited
100ms
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.0001 0.001 0.01
0.1
1
10
100
1000
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZqJC.RqJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RqJC=1.25°C/W
PDM
0.1
0.01
Single Pulse
Ton
T
1E-05
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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Rev.1.0: December 2018
Page 4 of 6
AOT66920L/AOB66920L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
3
TA=25°C
2
1
0
1
0
25
50
75
100
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note H)
VDS (Volts)
Figure 14: Coss stored Energy
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZqJA.RqJA
RqJA=60°C/W
0.1
PDM
0.01
0.001
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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Rev.1.0: December 2018
Page 5 of 6
AOT66920L/AOB66920L
Figure A: Gate Charge Test Circuit & Waveforms
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
I AR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Figure D: Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
IF
Isd
Vgs
dI/dt
IRM
+
Vdd
VDC
Vdd
-
Vds
Rev.1.0: December 2018
www.aosmd.com
Page 6 of 6
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