AOD403_11 [AOS]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AOD403_11 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总6页 (文件大小：414K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD403/AOI403
30V P-Channel MOSFET
General Description
Product Summary
VDS
-30V
The AOD403/AOI403 uses advanced trench technology
to provide excellent RDS(ON), low gate charge and low gate
resistance. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current load applications.
ID (at VGS= -20V)
RDS(ON) (at VGS= -20V)
RDS(ON) (at VGS = -10V)
-70A
< 6.2mΩ
< 8mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
TO251A
IPAK
D
Top View
Bottom View
Bottom View
Top View
D
D
G
S
G
G
S
S
D
D
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±25
-70
V
A
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
-55
Pulsed Drain Current C
IDM
-200
-15
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
-12
IAS, IAR
-50
A
EAS, EAR
125
90
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
45
TA=25°C
2.5
PDSM
W
°C
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
16
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
41
50
RθJC
0.9
1.6
Rev 8: May 2011
www.aosmd.com
Page 1 of 6
AOD403/AOI403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-20V, ID=-20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3.5
nA
V
VGS(th)
ID(ON)
-1.5
-2.5
-200
A
5.1
7.6
6.2
9.2
mΩ
mΩ
mΩ
mΩ
TO252
TJ=125°C
VGS=-10V, ID=-20A
TO252
6.2
5.6
6.7
8
RDS(ON)
Static Drain-Source On-Resistance
VGS=-20V, ID=-20A
6.7
8.5
TO251A
VGS=-10V, ID=-20A
TO251A
VDS=-5V, ID=-20A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
42
S
V
A
-0.7
-1
-70
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2310 2890 3500
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
410
280
1.9
585
470
3.8
760
660
5.7
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
40
10
10
51
12
16
16
12
45
22
61
14
22
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, ID=-20A
VGS=-10V, VDS=-15V, RL=0.75Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=-20A, dI/dt=100A/µs
IF=-20A, dI/dt=100A/µs
14
9
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
18
11
22
13
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 8: May 2011
www.aosmd.com
Page 2 of 6
AOD403/AOI403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
-10V
VDS=-5V
-6V
-5V
125°C
-4.5V
25°C
VGS=-4V
4
0
1
2
3
5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
10
8
1.8
1.6
1.4
1.2
1
VGS=-20V
ID=-20A
VGS=-10V
VGS=-20V
6
VGS
ID=-20A
=-10V
4
2
0.8
0
5
10
15
-ID (A)
20
25
30
0
25
50
75
100 125 150 175 200
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
20
15
10
5
1.0E+02
1.0E+01
ID=-20A
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
0
0
5
10
15
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 8: May 2011
www.aosmd.com
Page 3 of 6
AOD403/AOI403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
4000
3000
2000
1000
0
VDS=-15V
ID=-20A
8
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
50
60
0
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
400
320
240
160
80
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
10µs
100µs
1ms
10ms
DC
0.1
TJ(Max)=175°C
TC=25°C
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJC=1.6°C/W
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 8: May 2011
www.aosmd.com
Page 4 of 6
AOD403/AOI403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
120
90
60
30
0
1000.0
100.0
10.0
TA=25°C
TA=100°C
TA=150°C
TA=125°C
0
25
50
75
100
125
150
175
1
10
100
1000
TCASE (°C)
Figure 13: Power De-rating (Note F)
Time in avalanche, tA (ms)
Figure 12: Single Pulse Avalanche capability
(Note C)
10000
1000
100
10
80
70
60
50
40
30
20
10
TA=25°C
1
0
0
0.00001
0.001
0.1
10
1000
25
50
75
100
125
150
175
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
TCASE (°C)
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJA=50°C/W
0.1
PD
0.01
Single Pulse
T
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 8: May 2011
www.aosmd.com
Page 5 of 6
AOD403/AOI403
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
Rev 8: May 2011
www.aosmd.com
Page 6 of 6
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